Method for producing thin MEMS chips on SOI substrate and micromechanical component

Abstract

A method for producing thin MEMS chips on SOI substrate including: providing an SOI substrate having a silicon layer on a front side and having an oxide intermediate layer, producing a layer structure on the front side of the SOI substrate and producing a MEMS structure from this layer structure, capping the MEMS structure and producing a cavity, and etching a back side of the SOI substrate down to the oxide intermediate layer. Also described is a micromechanical component having a substrate, a MEMS layer structure having a MEMS structure in a cavity and a cap element, the MEMS structure and its cavity being enclosed by the substrate underneath and the cap element above, the substrate being made of polycrystalline silicon.

Claims

1. A method for producing a thin Micro-Electro-Mechanical System (MEMS) chip on a Silicon-on-Insulator (SOI) substrate, the method comprising: (A) providing an SOI substrate having a silicon layer on a front side and having an oxide intermediate layer; (B) producing a layer structure on the front side of the SOI substrate and producing a MEMS structure from this layer structure; (C) capping the MEMS structure and producing a cavity; and (D) etching a back side of the SOI substrate down to the oxide intermediate layer; wherein the MEMS structure is capped in (C) using another SOI substrate having another oxide intermediate layer and subsequently, in (C2), a back side of the additional SOI substrate is etched down to the additional oxide intermediate layer.

2. The method of claim 1, wherein the MEMS structure is capped in (C) using a cap wafer and subsequently, in (C1), a back side of the cap wafer is processed using a grinding process, whereby the cap wafer is thinned, (C1) occurring prior to (D).

3. The method of claim 1, wherein an SOI substrate having a polysilicon layer on the front side is provided in (A).

4. The method of claim 1, wherein an SOI substrate having a first structured oxide layer is provided in (A) as oxide intermediate layer.

5. The method of claim 1, wherein an SOI substrate having a multilayered oxide intermediate layer, in particular having a first structured oxide layer and another thin oxide layer is provided in (A).

6. The method of claim 1, wherein components are separated by a trench process that uses a first structured oxide layer as an etching mask.

7. A method for producing thin a Micro-Electro-Mechanical System (MEMS) chip on a Silicon-on-Insulator (SOI) substrate, the method comprising: (A) providing an SOI substrate having a silicon layer on a front side and having an oxide intermediate layer; (B) producing a layer structure on the front side of the SOI substrate and producing a MEMS structure from this layer structure; (C) capping the MEMS structure and producing a cavity; and (D) etching a back side of the SOI substrate down to the oxide intermediate layer; wherein the MEMS structure is capped in (C) wherein an additional oxide layer and a final polysilicon layer are deposited on the MEMS structure, wherein etching accesses are etched into the final polysilicon layer, wherein the additional oxide layer is etched through the etching accesses, and wherein an exposed MEMS structure is produced and the etching accesses are closed by depositing another layer or by melting the accesses shut.

8. The method of claim 7, wherein an SOI substrate having a polysilicon layer on the front side is provided in (A).

9. The method of claim 8, wherein the components are separated by a trench process that uses the first structured oxide layer as an etching mask.

10. The method of claim 7, wherein an SOI substrate having a first structured oxide layer is provided in (A) as oxide intermediate layer.

11. The method of claim 10, wherein the components are separated by a trench process that uses the first structured oxide layer as an etching mask.

12. The method of claim 7, wherein an SOI substrate having a multilayered oxide intermediate layer, in particular having a first structured oxide layer and another thin oxide layer is provided in (A).

13. The method of claim 12, wherein the components are separated by a trench process that uses the first structured oxide layer as an etching mask.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A shows the silicon layer, front side and back side of an SOI substrate.

(2) FIG. 1B shows the production of a MEMS structure on the SOI substrate with a silicon layer.

(3) FIG. 2 shows the capping of the MEMS structure using a cap wafer.

(4) FIG. 3A shows the thinning of the cap wafer and the process of etching to expose the contact areas on the MEMS element.

(5) FIG. 3B shows the thinning of the cap wafer, showing carrier water and oxide intermediate layer of substrate, and the process of etching to expose the contact areas on the MEMS element and the application of a carrier film or a carrier wafer.

(6) FIG. 4A shows the etching of a back side of the SOI substrate with an oxide intermediate layer.

(7) FIG. 4B shows the etching of a back side of the SOI substrate and the introduction of separating trenches.

(8) FIG. 5A shows the production of an SOI substrate having the first oxide polysilicon layer with monocrystalline Si wafer.

(9) FIG. 5B shows the production of an SOI substrate having a further oxide layer.

(10) FIG. 5C shows the production of an SOI substrate having a thick polysilicon layer.

(11) FIG. 5D shows the production of an SOI substrate having a thick polysilicon layer and the production of a MEMS structure on this SOI substrate.

(12) FIG. 6A shows the capping of the MEMS structure by deposition of a further oxide layer.

(13) FIG. 6B shows the capping of the MEMS structure by deposition of an etched further oxide layer.

(14) FIG. 6C shows the capping of the MEMS structure by deposition of a final polysilicon layer.

(15) FIG. 7A shows the exposition of a MEMS structure and the reclosure of a capping by layer deposition, showing etching access openings.

(16) FIG. 7B shows the exposition of a MEMS structure and the reclosure of a capping by layer deposition, with a removed further oxide layer.

(17) FIG. 7C shows the exposition of a MEMS structure and the reclosure of a capping by further layer deposition.

(18) FIG. 7D shows the exposition of a MEMS structure and the reclosure of a capping by further layer deposition, showing electrical contact.

(19) FIG. 8A shows the etching of a back side of the SOI substrate on the bottom, having a structured sacrificial layer.

(20) FIG. 8B shows the etching of a back side of the SOI substrate having a structured sacrificial layer where the back side is etched away.

(21) FIG. 8B shows the etching of a back side of the SOI substrate having a structured sacrificial layer with the back side further etched.

(22) FIG. 9A shows the separation of MEMS by etched trenches.

(23) FIG. 9B shows the separation of MEMS by etched trenches.

(24) FIG. 9C shows the separation of MEMS by trench etching, with the chips being removed from the carrier after etching.

(25) FIG. 10 shows schematically the method of the present invention for producing thin MEMS chips on SOI substrate.

DETAILED DESCRIPTION

First Exemplary Embodiment of the Method of the Present Invention for Producing Thin MEMS Chips on SOI Substrate

(26) A MEMS structure 2 is produced on an SOI wafer 1 using known production methods. For this purpose, a layer structure is produced on a front side 101 of the SOI wafer, that is, on silicon layer 110, from which the MEMS structure 2 is produced. The wafer is closed by a cap wafer 3. Before the SOI wafer is thinned, the cap wafer may be removed by a grinding process (FIG. 3 A). Optionally, contact surfaces are exposed or produced (FIG. 3 A). The wafer is applied with the cap side on a carrier wafer or a carrier film 4 (FIG. 3 B). Using an etching method, back side 102 of SOI substrate 1 is etched down to oxide intermediate layer 5 (FIG. 4 A). Optionally, it is possible to remove the oxide layer (FIG. 9 B). Advantageously, the wafer may be separated using a classic separation process such as a sawing process in that separation trenches 6 are introduced while the wafer is still held on the carrier wafer or carrier film (FIG. 4 B).

Second Exemplary Embodiment of the Method of the Present Invention Using a Cap Substrate as SOI Wafer

(27) Like the substrate material of the MEMS, the cap substrate may also be formed from an SOI wafer, and the back-thinning of the cap may be performed using a wet-etching process or a plasma-etching process with a stop on the intermediate oxide layer of the cap SOI wafer (not shown graphically here).

Third Exemplary Embodiment of the Method of the Present Invention Using Layer Deposition for Capping

(28) It is particularly advantageous if a layer deposition is used as capping method for the MEMS element. Polysilicon deposition is particularly advantageous. The MEMS elements are usually exposed by sacrificial layer etching using gaseous HF. It is therefore possible to deposit a further oxide layer 7 and a final polysilicon layer 8 on the final MEMS layer prior to the sacrificial layer etching (FIGS. 6 A through C). Via the access openings 9 etched into final polysilicon layer 8, it is then possible to remove the additional oxide layer 7, and exposed MEMS structures 10 may be created. The etching access openings may be closed by a further layer deposition 11 or by thermally melting the etching access openings shut (e.g. DE102014202801A1). Subsequently, electrical contacts 12 to the MEMS structure may be produced (FIGS. 7 A through D). The advantage of this method is that it produces a thin closing layer, which acts as a cap and does not necessitate back-thinning the cap wafer as in the first and second exemplary embodiments of the method described above.

(29) Furthermore, it is advantageously possible in this process to produce, as shown in FIGS. 7 A through D, also the electrical access to the MEMS elements by way of producing the etching access holes and the subsequent closure.

Fourth Exemplary Embodiment of the Method of the Present Invention Using an SOI Wafer Having a Structured Oxide Layer

(30) In place of a classic SOI wafer having two monocrystalline silicon areas and an oxide layer in between, it is also possible to use an SOI wafer having a structured oxide layer. Subsequently, the MEMS production process is directed to the structured oxide layer. The oxide layer is broken in the areas between the individual chips. In the simplest variant or as described in variant 2, the MEMS wafer is capped and applied onto a film or carrier wafer. As in the basic variant, the SOI wafer is thinned down to the intermediate oxide layer. The oxide layer is used as a mask for the further structuring of the wafer. Advantageously, at least starting with the oxide layer, an etching method that produces perpendicular edges is used like a trench method. Using the trench method, the chips are separated by trenches 18 (FIGS. 9 A and B) and may be removed from the carrier after etching (FIG. 9 C).

Fifth Exemplary Embodiment of the Method of the Present Invention Using an SOI Wafer Having a Structured Oxide Layer

(31) The oxide layer in the SOI wafer may also be built up from multiple layers of which at least one is structured or may have a thin and a thicker area, the thick area being structured. This makes it possible initially to remove the material very quickly down to the oxide layer using a not very perpendicularly etching removal process such as wet etching or pure plasma etching using SF6. Subsequently, it is possible to remove either the thin portion of the oxide layer by oxide etching down to the silicon layer underneath or to produce a structured surface on the silicon underneath by selective etching of one of the multiple layers. FIGS. 8 A through C show in exemplary fashion the etching of a back side 102 of an SOI substrate having a structured sacrificial layer. Subsequently, is is possible to produce etched trenches 18 using an etching method that produces perpendicular edges, in particular a trench method, and to separate the chips in this manner (FIG. 9 A through C). Due to the now very well defined remaining thickness and etch geometry, it is possible to use an etching method that is optimized in terms of costs and parameters. Since the separation of the chips is a self-adjusting process on the structured oxide layer, the separation may be very precise and cost-effective.

Sixth Exemplary Embodiment of the Method of the Present Invention Using an SOI Substrate Having a Polycrystalline Silicon Layer as the Uppermost Layer

(32) In place of a classic SOI wafer, which is produced via a direct bonding method of two wafers with an intermediate oxide layer, it is also possible to use a substrate having a polycrystalline silicon layer as uppermost layer. For this purpose, the present invention provides for taking a normal monocrystalline Si wafer 13 and for depositing or growing on it a first oxide layer 14. From this the first structured oxide layer 15 is produced (FIG. 5 A). Subsequently, another thin oxide layer 16 may be optionally grown or deposited as shown in FIG. 5 B. Then a thick polysilicon layer is deposited 17 (FIG. 5 C). It is advantageous to planarize the usually rough polysilicon surface. Using this new special substrate produced for this purpose, it is now possible to produce the thin MEMS sensor (FIG. 5 D). In this approach it is advantageous that the new substrate is more cost-effective to produce than the known production methods for SOI wafers. Furthermore it is very advantageous that it is now possible to use as substrate material for the thin MEMS sensor the same material as the MEMS function layer, which is usually also made of polycrystalline silicon. Furthermore, it is advantageous to combine this production method with a polycrystalline cap. If crystallographically identical material is used both as cap material, and therefore also as substrate material, and as functional layer, it is expected that the function layer no longer experiences any stress effects. In such approaches it is of course also advantageous that the substrate thickness below the MEMS and the cap thickness do not deviate greatly from each other so that the neutral fiber lies as much as possible in the function layer and thus in the MEMS structure. The difference between cap thickness and substrate thickness should therefore not exceed twice the thickness of the function layer.

(33) FIG. 10 shows schematically the method of the present invention for producing thin MEMS chips on SOI substrate including the essential steps:

(34) (A) providing an SOI substrate (1) having a silicon layer on a front side (101) and having an oxide intermediate layer (5),

(35) (B) producing a layer structure on the front side (101) of the SOI substrate (1) and producing a MEMS structure (2) from this layer structure,

(36) (C) capping the MEMS structure (2) and producing a cavity, and

(37) (D) etching a back side (102) of the SOI substrate down to the oxide intermediate layer (5).

(38) The List of Reference Symbols is as follows: 1 SOI substrate 2 MEMS structure 3 Cap wafer 4 Carrier wafer or carrier film 5 Oxide intermediate layer 6 Separation trench 7 Further oxide layer 8 Final polysilicon layer 9 Etching access 10 Exposed MEMS structure 11 Further layer deposition 12 Electrical contact 13 Monocrystalline Si wafer 14 First oxide layer 15 First structured oxide layer 16 Further thin oxide layer 17 Thick polysilicon layer 18 Etched trench 101 Front side of the SOI substrate 102 Back side of the SOI substrate 110 Silicon layer of the SOI substrate