Graphite Superconductor and Use Thereof

Abstract

The invention relates to a component for electric, magnetic, or optical applications, comprising at least two adjacent layers (G.sub.B1, G.sub.B2) with a common boundary region (G.sub.FB). The first layer has graphite with a Bernal crystal structure (graphite 2H), and the second layer has graphite with a rhombohedral crystal structure (graphite 3R). The boundary region has at least one boundary area (G.sub.G) which has superconductive properties at a transition temperature (T.sub.c) higher than 78 K and/or a critical magnetic flux density (B.sub.k) greater than 1 T.

Claims

1-11. (canceled)

12. A device comprising: a substrate (G.sub.sub) including at least a first layer (G.sub.B1) and a second layer (G.sub.B2), wherein the first layer (G.sub.B1) and the second layer (G.sub.B2) are positioned adjacent to each other and comprise a common boundary region (G.sub.FB) extending from the first layer (G.sub.B1) to the second layer (G.sub.B2) and wherein the first layer (G.sub.B1) comprises graphite with a Bernal-crystal structure, and wherein the second layer (G.sub.B2) comprises graphite having a rhombohedral crystal structure, and wherein the boundary region (G.sub.FB) includes at least one border region (G.sub.G), wherein the border region (G.sub.G) has superconducting properties, namely at a current density of 0 Ampere/m.sup.2 and a magnetic flux density of 0 Tesla exhibiting a critical temperature (T.sub.c) which is higher than 195 C., and/or at a temperature below the critical temperature (T.sub.c) and a current density of 0 Ampere/m.sup.2, exhibiting a critical magnetic flux density (B.sub.k) that is higher than 1 Tesla, and wherein the border region (G.sub.G) is coupled to an electric and/or a magnetic and/or an electromagnetic signal with a frequency greater than or equal to 0 Hertz.

13. The device of claim 12, wherein the Bernal-crystal structure is a graphite 2H structure.

14. The device of claim 12, wherein the rhombohedral crystal structure is an English-rhombohedral, graphite 3R structure.

15. The device of claim 12, wherein the critical temperature (Tc) is higher than 100 C.

16. The device of claim 12, wherein the critical temperature (Tc) is higher than 360K.

17. The device of claim 12, wherein the critical magnetic flux density (B.sub.k) that is higher than 20 Tesla.

18. The device of claim 12, wherein: the first substrate (G.sub.sub) comprises a plurality of first layers (G.sub.B1) comprising graphite with the Bernal-crystal structure and/or a plurality of second layers (G.sub.B2) comprising graphite having the rhombohedral crystal structure and the first substrate comprises a plurality of boundary regions (G.sub.FB).

19. The device of claim 12, wherein: the first layer (G.sub.B1) runs substantially parallel to the second layer (G.sub.B2) and/or base vectors of first graphene layers of the first layer (G.sub.B1) relative to base vectors of second graphene layers of the second layer (G.sub.B2) are rotated around a surface normal of the second graphene layers.

20. The device according to claim 12, further comprising: an ohmic contact electrically connected to the border region (G.sub.G) and/or a coil inductively coupled with the border region (G.sub.G) and/or an electrode capacitively coupled to the border region (G.sub.G) and/or an optical element, electro-magnetically coupled with the border region (G.sub.G).

21. The device according to claim 12, further comprising: at least one conductor including at least a portion of the border region (G.sub.G), wherein a first phase-difference-introducing vulnerability is inserted into the at least one conductor.

22. The device according to claim 21, wherein: the at least one conductor is divided into a first conductor branch and a second conductor branch and the first conductor branch and the second conductor branch form an area with an opening between the first conductor branch and the second conductor branch at least in part.

23. A method for manufacturing a device comprising: providing a first substrate (G.sub.sub) wherein the first substrate (G.sub.sub) comprises at least a first layer (G.sub.B1) and a second layer (G.sub.B2), wherein the first layer (G.sub.B1) and the second layer (G.sub.B2) are positioned adjacent to each other and comprise a common boundary region (G.sub.FB) extending from the first layer (G.sub.B1) to the second layer (G.sub.B2) and wherein the first layer (G.sub.B1) comprises graphite with Bernal-crystal structure, and wherein the second layer (G.sub.B2) comprises graphite having a rhombohedral crystal structure and wherein the boundary region (G.sub.FB) includes at least one border region (G.sub.G), wherein the border region (G.sub.G) has superconducting properties, namely at a current density of 0 Ampere/m.sup.2 and a magnetic flux density of 0 Tesla exhibiting a critical temperature (T.sub.c) higher than 195 C. and/or at a temperature below the critical temperature (T.sub.c) and a current density of 0 Ampere/m.sup.2, exhibiting a critical magnetic flux density (B.sub.k) higher than 1 T, and structuring of the substrate (G.sub.sub); and providing an ohmic contact electrically connected to the border region (G.sub.G) and/or a coil inductively coupled to the border region (G.sub.G) and/or an electrode capacitively coupled to the border region (G.sub.G) and/or an optical element electro-magnetically coupled to the border region (G.sub.G).

24. The method of claim 23, wherein the critical temperature (Tc) is higher than 100 C.

25. The method of claim 23, wherein the critical temperature (Tc) is higher than 360K.

26. The method of claim 23, wherein the critical magnetic flux density (B.sub.k) that is higher than 20 Tesla.

27. The method according to claim 23 wherein: the structuring of the first substrate (G.sub.sub) is performed using wet-chemical etching and/or ion or particle beam etching and/or Focused-Ion-Beam and/or plasma etching and/or electrochemical etching and/or shape cutting chipping technology and/or pressing and/or sintering and/or spark erosion and/or amorphization.

28. The method of claim 23, wherein: the first substrate (G.sub.sub) is provided by investigation of natural or artificial graphite for an existence of the boundary region (G.sub.FB) between the first layer (G.sub.B1) of Bernal-crystal structure, and the second layer (G.sub.B2) of rhombohedral crystal structure; Checking that the boundary region (G.sub.FB) comprises the border region (G.sub.G) having superconducting properties; and Using the first substrate (G.sub.sub) with the boundary region (G.sub.FB) having the border region (G.sub.G) as the first substrate (G.sub.sub).

29. The method according to claim 28 wherein: checking that the boundary region (G.sub.FB) comprises the border region (G.sub.G) having superconducting properties is performed by measuring the first substrate (G.sub.sub) with magnetic force microscopy (MFM) for locating a line current.

30. A system comprising: a substrate (G.sub.sub) comprising: at least a first layer (G.sub.B1) and a second layer (G.sub.B2), wherein the first layer (G.sub.B1) and the second layer (G.sub.B2) are positioned adjacent to each other and comprise a common boundary region (G.sub.FB) extending from the first layer (G.sub.B1) to the second layer (G.sub.B2), wherein the first layer (G.sub.B1) comprises graphite with Bernal-crystal structure, and wherein said second layer (G.sub.B2) comprises graphite having rhomboed-driven crystal structure, and wherein the boundary region (G.sub.FB) includes at least one border region (G.sub.G) and wherein the border region (G.sub.G) has superconducting properties, namely at a current density of 0 Ampere/m.sup.2 and a magnetic flux density of 0 Tesla exhibiting a critical temperature (T.sub.c) higher than 195 C. and/or at a temperature below the critical temperature (T.sub.c) and a current density of 0 Ampere/m.sup.2, exhibiting a critical magnetic flux density (B.sub.k) higher than 1 Tesla, and at least one of: an ohmic contact electrically coupled to the border region (G.sub.G), a coil inductively coupled with the border region (G.sub.G), an electrode capacitively coupled to the border region (G.sub.G), and an optical element, electro-magnetically coupled with the border region (G.sub.G), and wherein the border region (G.sub.G) is coupled to an electric and/or magnetic and/or electromagnetic signal with a frequency greater than or equal 0 Hertz.

31. The method of claim 30, wherein the critical temperature (Tc) is higher than 100 C.

Description

DESCRIPTION OF THE FIGURES

[0178] The figures represent schematically simplified schematic sketches.

[0179] FIG. 1 shows the first step of providing (1) a substrate (G.sub.sub) with a first layer region (G.sub.B1) and a second layer region (G.sub.B2) and an interface (G.sub.FB). In a preferred embodiment, for example, the first layer region (G.sub.B1) consist of bernal graphite and the second layer region (G.sub.B2) consist of rhombohedral graphite.

[0180] FIG. 2 shows a first preferred step of processing the substrate (G.sub.sub) of FIG. 1 with the third step of thinning (3) of a relevant layer area (G.sub.B1, G.sub.B2), here the first layer area (G.sub.B1) and the creation of a lower boundary surface (U.sub.GF) parallel to the border region (G.sub.FB) after completing the determination (2) of the orientation of the surface normal of the graphene layers of the boundary region (G.sub.FB) within the substrate (G.sub.sub) as a second process step.

[0181] FIG. 3 shows the preferred step of attaching (5) the preferably thinned substrate (G.sub.sub) of FIG. 2 to the surface (OF) of the carrier (Sub.sub.1) by applying (4) and fixing the preferably thinned substrate (G.sub.sub) to the surface (OF) of a carrier (Sub.sub.1). This application can be done for example by glueing by means of a not shown here adhesive (GL). The assembly can be done for example by a temperature treatment the adhesive for fixing. Possibly, both steps can also be carried out in one step, if the temperature treatment of the exemplary adhesive is not necessary due to its properties.

[0182] FIG. 4 shows a further preferred step of processing the substrate (G.sub.sub) of FIG. 3 in the form of the thinning (6) of the other layer area, which is not the relevant layer area. This is the second layer area (G.sub.B2).

[0183] FIG. 5 shows an exemplary structuring (8) of the first substrate (G.sub.sub) of FIG. 4.

[0184] FIG. 6 shows the exemplary structuring (8) of the first substrate (G.sub.sub) of FIG. 5 with exemplary beveling of the etching edges by a suitable choice of the process parameters. In particular, photolithographic etching processes as mentioned above come into question here.

[0185] FIG. 7 shows the exemplary application (9) of at least one electrically conductive layer (ELS) to the first substrate (G.sub.sub) of FIG. 6 to produce the contacts.

[0186] FIG. 8 shows the exemplary structuring (10) of the at least one electrically conductive layer (ELS) of FIG. 7, by means of which it forms a first conductor line (L1) and a second conductor line (L2) in the example of FIG. 8.

[0187] FIG. 9 shows the exemplary application (11) of at least one electrically insulating layer (IS) on the first substrate (G.sub.sub) of FIG. 8 or respectively on the substrate (Sub.sub.1) of FIG. 8 or respectively on the electrically, in particular the electrically normally conductive layer (ELS) of FIG. 8.

[0188] FIG. 10 shows the exemplary structuring (12) of the at least one insulating layer (IS) of FIG. 9, e.g. for opening the contacts (K) or for vias.

[0189] FIG. 11 shows an exemplary sequence of steps for producing the proposed devices: [0190] Provision of (1) a first substrate (G.sub.sub) having at least two layer regions (G.sub.B1, G.sub.B2); [0191] Determination (2) on the orientation of the surface normals the graphene layers of the boundary region (G.sub.FB) within the substrate (G.sub.sub); [0192] Thinning (3) a relevant layer region (G.sub.B1, G.sub.B2) and creating a lower boundary surface (UGF) parallel to the graphene layers of the boundary region (G.sub.FB); [0193] Applying (4) the preferably thinned substrate (G.sub.sub) to the surface (OF) of a carrier (Sub.sub.1); [0194] Attaching (5) the preferably thinned substrate (G.sub.sub) to the surface (OF) of the carrier (Sub); [0195] Thinning (6) of the other layer area (G.sub.B1, G.sub.B2), which is not the relevant layer area; [0196] Providing (7) a second substrate (SUB), for example in the form of a microelectronic circuit; [0197] Structuring (8) of the first substrate (G.sub.sub); [0198] Applying (9) at least one electrically conductive layer to the first substrate (G.sub.sub) or to the second substrate (SUB), for example to produce the contacts; [0199] Structuring (10) the at least one electrically conductive layer; [0200] Applying (11) at least one electrically insulating layer to the first substrate (G.sub.sub) or second substrate (SUB) or the carrier (Sub.sub.1) or to an electrically, in particular normal, conducting layer; [0201] Structuring (12) of the at least one insulating layer, e.g. for opening the contacts or through holes; [0202] Providing (13) border region (G.sub.FB) contacts.

[0203] FIG. 12 shows a Josephson diode in cross section. The exemplary first substrate (G.sub.sub) of FIG. 4 is intersected by a first phase difference inducing weak point, namely the tunneling element (TU), in the form of, for example, an a few atom thick oxide or of a normally conducting disturbance of the stacking sequence of the graphene layers. Such a phase difference introducing weak point can be formed by an insulator, in particular air or vacuum, or

by a local modification of the graphene stacking sequence or
by another at room temperature normally conducting or
by at temperatures higher than 195 C. or better at temperatures higher than the critical temperature T.sub.c non-superconducting graphite regions that form border regions (G.sub.G) within the conductor (W) or by metal.

[0204] The exemplary first substrate (G.sub.sub) of FIG. 4 is interrupted by the tunneling element (TU), for example, a few atomic layers thick oxide.

[0205] FIG. 13 shows the exemplary electrical component (SQUID) on the basis of the phase difference-introducing weak point (Josephson contact) from FIG. 12 in plan view. The first substrate (G.sub.sub) is structured such that an annular structure with two branches results. The two branches are each interrupted by a Josephson diode in the form of a phase-modulating tunnel element (TU.sub.1, TU.sub.2). In case of a current flow (I), the voltage drop depends on the magnetic field perpendicular to the plane of the drawing. A SQUID can be used as a phase Q-bit (English phase qbit) within quantum computers. In this context, reference should be made to Xiu Gua Microwave photonics with superconducting quantum circuits ArXiv: 1707.02046v2 [quant-ph] 19 Oct. 2017.

[0206] FIGS. 14 to 20 show, by way of example, Hall structures using superconducting material in accordance with the invention.

[0207] FIG. 14 shows a schematic simplified principle cross section through an integrated microelectronic circuit with a Hall structure (HL), which is part of an integrated circuit as a device sensitive to magnetic fields. The Hall structure (HL) is manufactured in a semiconducting carrier (Sub.sub.1). The Hall structure (HL) is protected by an insulator (OX). Other isolators or insulator materials are conceivable. Also, whole metal/oxide stacks as insulator (OX) are conceivable. From the state of the art here diverse interconnection systems for integrated circuits and Hall sensor structures are known. The Hall structure in this example can be contacted via contacts (K1, K2). With the aid of an adhesive (GL), the superconductive layer package, ie the first substrate (G.sub.sub with G.sub.B1, G.sub.B2, G.sub.FB, G.sub.G) with the superconducting interface or the superconducting border region within a boundary region on the Hall structure (HL) having carrier (Sub.sub.1), is attached. On this sub-device, so for example, the said carrier (Sub.sub.1) with the said Hall structure (HL) so the above-described, superconducting at room temperature first substrate (G.sub.B1, G.sub.B2, G.sub.FB, G.sub.G) is applied. This can happen, for example, but not only by gluing or clamping with a non-magnetic material, here the adhesive (GL). As a result, the Hall structure (HL), as a magnetic field sensitive electronic component, exhibits in its immediate vicinity at least one subdevice, the border region (G.sub.G), which is an electrical superconductor within the meaning of the invention.

[0208] It has also been shown in laboratory experiments that thinning of the graphite layers is not always necessary, depending on the starting material.

[0209] By a first contact doping (KD1) and a second contact doping (KD2) the Hall structure (HL) is electrically contacted in the example of FIG. 14 via the first contact (K1) and the second contact (K2). The dopings of the substrate of the carrier (sub.sub.1) usually take place with a very high dopant concentration in order to produce ohmic contacts (K1, K2). If the semiconductor substrate of the carrier (Sub.sub.1) is of a first conductivity type (eg p-doped), for example a p-doped silicon substrate, as is usual in CMOS circuits, then the Hall structure (HL) is of a second conductivity type opposite to the first conductivity type, if it is not placed in a separate well, thus, for example, a weakly n-doped silicon structure within the semiconducting substrate of the carrier (Sub.sub.1). In this case, the contact dopants (KD1, KD2) are also of a second conductivity type opposite to the first conductivity type, that are, for example, formed as highly n-doped silicon structures within the semiconducting substrate of the substrate (Sub.sub.1) in contact with the Hall structure (HL) and the metal of the contacts (KI, K2). It will be apparent to those skilled in the art that prior to application of the substrate (G.sub.sub) on the carrier (Sub.sub.1) of the carrier may have been subjected to a microtechnical process, wherein on or in the carrier nano- or microelectronic circuits and/or nano- or micromechanical devices and/or micro-optical devices and/or microfluid may have been manufactured.

[0210] The structure shown in FIG. 15 is based on that of FIG. 14. In contrast to FIG. 14, FIG. 15 shows a more complex metallization stack now. This consists of a first insulating layer, preferably a first oxide (OX1), which is preferably a gate oxide, and a second insulating layer (OX2), preferably a second oxide. Between the first insulation layer (OX1) and the second insulation layer (OX2) are two exemplary interconnection lines (L1, L2). There is now an interaction between the current flow in the interconnects (L1, L2) and the room temperature superconducting border region (G.sub.G) or the interface (G.sub.F) of the boundary region (G.sub.FB) of the substrate G.sub.sub. The inductance coating of the interconnects (L1, L2) is changed by the proximity of the room temperature superconducting border region (G.sub.G) of the substrate (G.sub.sub). More complex metallization stacks and doping structures within the carrier (Sub.sub.1) are of course possible.

[0211] FIG. 16 corresponds to FIG. 15 with the difference that the substrate (G.sub.sub) is now photolithographically connected via a third interconnect (L3). In the example, the substrate (G.sub.sub) is exemplarily electrically connected to the second contact (K2). This prevents the substrate (G.sub.sub) from being able to charge statically.

[0212] FIG. 17 schematically shows an exemplary combined microfluidic/micromechanical device with a (eg semiconductor) substrate as carrier (Sub.sub.1). The metallization stack of FIG. 15 is made more complex in order to carry out the micromechanical and microfluidic subdevices in the metallization stack in this example. It is known from the prior art that the implementation of micromechanical/microfluidic components can also take place in the substrate of the carrier (Sub.sub.1). For example, the metallization stack can include layers of metals (such as titanium, tungsten, gold, platinum, aluminum, iron, niobium, vanadium, manganese, etc.), insulators (such as siliconnitide, silicon oxide, etc.), amorphous or polycrystalline semiconductor layers (such as polycrystalline siliconalso called polyor amorphous silicon or monocrystalline silicon or other corresponding semiconductor materials, in particular III/V materials and II/VI materials). This layer stack may therefore be generated at least in part by bonding different substrates to one another. In the example of FIG. 17, a first insulator layer (OX1), a second insulator layer (OX2) and a third insulator layer (OX3) and a polycrystalline silicon layer (PLY) are provided. In the example of FIG. 17, the polycrystalline silicon layer in subregions of the surface of the device below the third insulator layer (OX3) is removed by surface micromechanical methods now. This can be done for example by etching gases, as known in the art. With suitable structuring, a micromechanical beam (BE) can be generated, which can be electrostatically excited to vibrate, for example via the Hall structure (HL) or the exemplary conduction lines (L1, L2). It is known from the prior art that such a beam has a vibration quality which depends on the pressure of the residual gas in its surroundings. The vibration behavior also depends on the interaction between the room temperature superconducting substrate (G.sub.sub) and the other electrically conductive subdevices (L1, L2, HL, Sub.sub.1). The beam is thus also a microfluidic element which interacts with the gaseous fluid of its environment. Its efficiency is indeed reduced in liquids, but also works in principle. The use in conjunction with a pressure cell in a pressure sensor, in particular an absolute pressure sensor, is therefore also conceivable. For this purpose, the cavity (CAV) of FIG. 17 only needs to be completely closed by the exemplary poly-silicon. This is shown in FIG. 18.

[0213] FIG. 18 corresponds to FIG. 17 with a closed cavity (CAV), for example for an absolute pressure sensor or a microfluidic component.

[0214] FIG. 19 corresponds to FIG. 15, with the difference that an optically active layer (OA) is applied which exhibits an electro-optical effect which interacts with the magnetic field of the room-temperature superconducting substrate (G.sub.sub). This interaction can be observed optically or used for the modification of optical radiation which falls on the optically active layer (OA) and is reflected there. In the latter case, it is expedient to insert a reflection layer between optically active layer (OA) and the substrate (G.sub.sub) superconducting at room temperature.

[0215] FIG. 20 corresponds to FIG. 19 with the difference that the optically active layer (OA) is now designed as an electro-optically active section of an optical waveguide (OA). The figure shows this section schematically as a schematic diagram in cross section. The light is guided perpendicular to the image plane in the optical waveguide. In this way, it is possible to construct a magneto-optical switch which, by means of the Kerr effect in an optical waveguide section which is embodied in the form of an electro-optically active section, modulates the phase of the light in the optical waveguide or the transit time of the light through this section of the optical waveguide. The special feature is that the substrate superconducting at room temperature (G.sub.sub) can generate a magnetic field that can affect this portion of the optical waveguide. As a result, light switches can be built, which only need a short-term control for switching.

[0216] FIGS. 21 to 23 show schematic diagrams for material measurement.

[0217] FIGS. 21 to 23 are taken from the text by Markus Stiller, Pablo D. Esquinazi, Christian Precker, and Jose Barzola-Quiquia Local magnetic measurements of permanent current paths in a natural graphite crystal, J. Low Temp. Phys. 191, 105-121 (2018) and are schematized vs. the original artwork. FIG. 21 corresponds to the colored FIG. 1, figure. 22 corresponds to the colored FIG. 2b, and FIG. 23 corresponds to FIG. 2c of the publication The content of this document is more complete with respect to the methods and materials used part of the invention.

[0218] FIG. 21 shows the properties of a natural graphite suitable for use in such devices and methods as described herein. The use of this type of graphite for the described devices and methods is expressly within the scope of the present invention. In particular, the use of graphite from Sri Lanka is claimed. FIG. 21 shows the topography of a suitable graphite sample in the subFIGS. 21a, 21c, 21e measured by means of a MFM. It further shows the measured phase in the subFIGS. 21b, 21d, 21f. The pair of sub-FIGS. 21a, 21b shows topography and phase for the original sample in the original state. The sub-pair of FIGS. 21c, 21d; 21e, 21f showed the topography and the phase after the application of a magnetic field. The phase shows a signal after the sample has been exposed to a magnetic field. Therefore, the method for finding suitable substrates with the following steps is part of the invention: [0219] Providing a substrate for room temperature superconductivity testing, in particular for convenience at a temperature higher than 40 C.; [0220] Exposing the substrate to a magnetic field, with more than 0.5 better more than 1 T, better more than 2 T, better more than 4 T, better more than 8 T. [0221] Measuring a region with an MFM to locate a line current;

[0222] Particularly preferably, the region is measured before the application of the magnetic field in order to be able to measure the changes.

[0223] A re-measurement of a region with a line current is recommended after a rest time of more than 5 minutes and/or more than an hour and/or more than a day and/or more than a week better one month to re-confirm the superconductivity.

[0224] The subFIGS. 21d and 21f show the jump of the magnetic field in the form of a jagged step across the image.

[0225] FIG. 22 shows a sequence of several images of the phase measured with the MFM. It can be clearly seen that these are large-scale structures.

[0226] FIG. 23 shows the jump of the phase measured transversely to one of the lines to be recognized in FIGS. 21d, 21f and 22 (line currents). The 1/r dependence in the vicinity of the edge and the freezing of the magnetic flux on one side of the line current can be seen (r stands for the distance from the respective line, which can be seen in said figures).

[0227] Hereinafter, figures for material construction according to various embodiments of the invention will be described.

[0228] FIG. 24 schematically shows a bernal crystal structure of graphite according to the prior art.

[0229] FIG. 25 schematically shows a rhombohedral crystal structure of graphite according to the prior art.

[0230] FIG. 26 shows schematically the contact between a rhombohedral crystal structure of graphite in the upper three graphene planes as second layer region (G.sub.B2) and a bernal graphene structure in the lower three graphene planes as first layer region (G.sub.B1). Other graph layers are conceivable as a continuation up and down. FIG. 26 corresponds to the structure of the graphene planes of FIG. 1, which shows a combination of a rhombohedral layer region and a bernal layer region.

[0231] FIG. 27 shows another example of the generation of an overall stacking sequence by inserting a single graphene layer as the second layer region (G.sub.B2) into a bernal graphite crystal having a first layer region (G.sub.B1) and a third layer region (G.sub.B3). In the example, a single rhombohedral graphene layer is placed as a second layer region (G.sub.B2) between two bernal graphene layer regions (the first layer region (G.sub.B1) and the third layer region (G.sub.B3)). In this sense, the structure of FIG. 27 has two interfaces (G.sub.F1, G.sub.F2) or border regions within a boundary region (G.sub.FB).

[0232] FIG. 28 schematically shows a simple arrangement for a Cooper pair box for a single Cooper pair, as already known, for example, from V. Bouchiat Quantum Coherence with a Single Cooperable Pair, Physica Scripta, Vol. T76, 165-170, FIG. 1, 1998 for normal superconductors. The conductor (W) is divided by a first phase-introducing weak point (TU.sub.1) (English Josephson Juction) in a first conduction line section (W1a) and a second conduction line section (W1b) of an electrical line. The first conduction line section (W1b) is contacted via a first electrical node (N1). The second line section is capacitively contacted via a coupling capacitor (C.sub.g). The other pole of the coupling capacity (C.sub.g) is preferably electrically contacted via a second electrical node (N2). By means of a control voltage (V.sub.g), the occupation of the energy states in the Cooper pair box formed by the second line section (W1b) can be controlled. In contrast to the prior art, it is proposed that the material of the first and second line sections (W1a, W1b) is formed by a material having superconducting properties at least in subregions, the border regions (G.sub.G), in accordance with the invention. The component proposed here is a charge Q-bit. In this context, reference should be made to Xiu Gua Microwave photonics with superconducting quantum circuits arXiv: 1707.02046v2 [quant-ph] 19 Oct. 2017.

[0233] FIG. 29 illustrates an extension of the basic principle of a Cooper pair box illustrated in FIG. 28. The Cooper pair box is again formed by the second conduction line section (W1b). However, this Cooper pair box has three ports instead of two. The conductor (W) is again divided in contrast to the prior art by a first phase shift introductory weak point (TU.sub.1) and a second phase shift introductory weak point (TU.sub.2) into a first conduction line section (W1a), a second conduction line section (W1b) and a third divided conduction line section (W1c). Such a phase-shifting vulnerability is typically a Josephson junction. The first conduction line section (W1a) is contacted via a first electrical node (N1). The third conduction line section (W1c) is contacted via a third electrical node (N3). The Cooper pair box in the form of the second conduction line section (W1b) is capacitively connected via a coupling capacitor (C.sub.g)

[0234] For example, from Caspar H. van der Wal et al. Quantum Superposition of Macroscopic Persistent Current States Science Vol. 290, 27 Oct. 2000, pages 773-777 is known for superconductors of the prior art that the previously in FIGS. 13, 28 and 29 and in the following FIG. 33 described quantum interference components can be interconnected to form more complex circuits. Such interconnections based on conventional superconductors are also known, for example, from U.S. Pat. No. 6,838,694 B2. In contrast to the prior art, however, it is proposed here to produce such interconnections from quantum interference components which have at least one sub-device which has superconducting properties in the sense of the invention.

[0235] The individual use of such superconducting quantum interference components from the prior art is known, for example, from V. Bouchiat Single Cooper Pair Electronics Applied Superconductivity Vol. 6, Nos 1012, pp. 491-494, 1998 and AB Zorin, Cooper-pair qubit and Cooper-pair electrometer in one device, arXiv: cond-mat/0112351 [cond-mat.supr-con], 19 Dec. 2001 and Michel H. Devoret and Robert J. Schoelkopf Amplifying quantum signals with the single-electron transistor Nature, Vol. 406, 31 Aug. 2000.

[0236] In contrast to the prior art, it is proposed according to the invention that the material of the first, second and third conduction line sections (W1a, W1b, W1c) is formed by a material that exhibits, at least in subregions, the border regions (G.sub.G), superconducting properties in the sense of the invention.

[0237] FIG. 30 shows a flux Q-bit (English flux qbit).

[0238] FIG. 30 shows another useful technical application. It is known for superconductors of the prior art, for example, from the following documents: Robert J Schoelkopf, Steven M. Girvin Experiments in Quantum Coherence and Computation with Single Cooper-Pair Electronics US Army Report 2006, A. Wallraff et al. Circuit Quantum Electrodynamics: Coherent Coupling of a Single Photon to a Cooper Pair Box arXiv: cond-mat/0407325vl [cond.mes-hall] 13 Jul. 2004, M. Goppl et al., Coplanar Waveguide Resonators for Circuit Quantum Electrodynamics arXiv: 0807.4094v1 [cond-mat.supr-con] 25 Jul. 2008, Luigi Frunzio et al. Fabrication and characterization of supercondueting cireuit QED devices for quantum computation arXiv: cond-mat/0411708v1 [cond-mat.supr-con] 28 Nov. 2004, and Alexandre Blais et al., Cavity quantum electrodynamics for superconducting electrical circuits: an architecture for quantum computation, arXiv: cond-mat/0402216v1 [cond.mes-hall] 7 Feb. 2004. These are a flux Q-bit (English flux qbit). In this context, reference should also be made to Xiu Gua Microwave Photonics with Superconducting Quantum Circuits arXiv: 1707.02046v2 [quant-ph] 19 Oct. 2017.

[0239] Instead of a conventional superconductor, a graphene stack with a suitably selected stacking sequence of the graphene layers, according to one of the previously described variants with superconducting properties within a boundary region or an interface according to the invention, is used. The graphene stack preferably exhibits superconducting properties at room temperature, at least in a partial region, the border region (G.sub.G).

[0240] The graphene layer package is applied electrically insulated to a carrier (Sub.sub.1). The graphene layer package is preferably structured by photolithography. The layer packet is divided by the structuring by a structured triplate microstrip line into a first ground plate (GND1) and a second ground plate (GND2). These ground plates (GND1, GND2) represent two of the three conductors of the triplate microstrip line. Between them there is a structured center conductor (ML) separate from them. At the input and output points (E1, E2) for the microwave signal, the center conductor is widened for adaptation to a coaxial connection cable. The center conductor (ML) consists of the material of the graphene layer package. The center conductor (ML) is preferably produced during the structuring of the graphene layer package. In the example of FIG. 30, the center conductor is interrupted at one point by a capacitor (C1). This is shown in detail in FIG. 30b. By turns of the triplate line, two inductors (Li1, Li2) are incorporated into the conduction line in the example. At one point between these inductors (Li1, Li2), a Cooper pair box is installed in one of the two slots between the center conductor (ML) and the two ground plates (GND1, GND2). In this example, the Cooper pair box is built into the space between the center conductor (ML) and the first ground plane (GND1). The Cooper Pair Box (CPB) is formed by a single conduction line. It corresponds to the second conduction line section (W1b) of the two preceding figures. The Cooper-pair-box (CPB) is connected via two conduction lines, each having a phase shift introducing weak point (TU1, TU2), with the coupling area of a coupling capacitor (C.sub.g). In addition, this device part has an opening (O1), via which an inductive coupling to the B field of the electromagnetic wave in the waveguide can take place. The Cooper Pair Box is also capacitively coupled to the center conductor. It is also conceivable to realize only these parts of the device using the proposed graphene stack. The material of the Cooper pair box and around the opening (O1) is superconducting in the sense of the invention.

[0241] FIG. 31 shows another example. In the example, a third, here by way of example a bernal graphene layer packet (G.sub.B2), is placed between two also exemplary bernale graphene layer packets (G.sub.B1, G.sub.B3). In this sense, the structure of FIG. 31 has two interfaces (G.sub.F1, G.sub.F2) or, in general, border regions within the boundary region (G.sub.FB).

[0242] FIG. 32 shows another example. In the example, two exemplary bernal graphene layer packages (G.sub.B1, G.sub.B2) are placed in translatory and/or rotational offset from one another. In this sense, the structure of FIG. 32 has an interface (G.sub.F).

[0243] FIG. 33 shows the exemplary electrical component (SQUID) based on the Josephson contact of FIG. 12 in plan view. The first substrate (G.sub.sub) is structured such that an annular structure results, wherein the ring is not completely closed in contrast to FIG. 13. Of the two branches, the first branch (W1a, W1b) is interrupted by a Josephson diode in the form of a first phase-modulating tunnel element (TU.sub.1). With current flow (I), the voltage drop also depends on the magnetic field perpendicular to the drawing plane. The second branch (W2a, W2b) is interrupted by a gap in the second branch (W2a, W2b), so that a second capacitance (C2) results, which causes a further phase shift.

[0244] FIG. 34 shows in plan view an exemplary metamaterial, i. e. a material whose the propagation of electrical, magnetic, electromagnetic fields and waves as well as acoustic waves and plasma waves describing parameters differ from that normally found in nature. The metamaterial is applied to a non-subscribed carrier (Sub.sub.1) and structured. The metamaterial consists of an exemplary two-dimensional arrangement of nm metamaterial substructures (MTS.sub.i,j) with n and m as the whole positive number and 1<in and 1<jn. Three-dimensional arrangements of l*n*m metamaterial substructures (MTS.sub.i,j,k) with l and n and m as a positive integer number and 1<kl and 1<in and 1<jm are conceivable. As such, FIG. 34 is just one example of a proposed metamaterial. Each metamaterial structural part comprises a conductor structure (W.sub.i,j) where the indices i and j are the x and y position within the two-dimensional arrangement of n*m metamaterial substructures (MTS.sub.i,j), i.e. represent the position in a first and in a second direction. Analogously, in a three-dimensional arrangement of l*n*m metamaterial substructures (MTS.sub.i,j,k), the additional index k would indicate the position in the z direction, i.e. in the direction of the third coordinate. Such a metamaterial with a two-dimensional arrangement of nm metamaterial substructures (MTS.sub.i,j) is characterized in that it preferably has a two-dimensional periodicity, i.e. it represents a two-dimensional lattice. Analogously, a three-dimensional arrangement of l*n*m metamaterial substructures (MTS.sub.i,j,k) has a three-dimensional periodicity and thus represents a three-dimensional grid. In the example of FIG. 34, a sheet-like metamaterial is shown with, by exemplaric 44 metamaterial substructures (MTS.sub.i,j). This means that the indices of j and i are in the range between 1 and 4, whereas the interval limits for these two intervals are included.

[0245] Preferably, each of the metamaterial substructures (MTS.sub.i,j) exhibits at least one associated conductor (W.sub.i,j). This is preferably a superconductor in the context of the invention. Particularly preferably, adjacent metamaterial substructures (MTS.sub.i,j) are ohmically coupled to one another by direct contact, magnetically via coupling magnetic fields and/or capacitively via capacitances. The metamaterial substructures (MTS.sub.i,j) can have openings, in particular for magnetic coupling. The topological genus of its shape in supervision can therefore deviate from 0. However, the coupling can also be achieved, as in the example of FIG. 34, by a weak point (TU.sub.i,j) per metamaterial substructure (MTS.sub.i,j) which introduces a phase shift. In the example of FIG. 34, two weak points (TU.sub.l,i,j, TU.sub.o,i,j) are provided per metamaterial substructure (MTS.sub.i,j). Hereby, within the exemplary metamaterial, each metamaterial substructure (MTS.sub.i,j) is connected with four other metamaterial substructures (MTS.sub.(i+1),j), MTS.sub.(i1),j, MTS.sub.(i,(j+1), MTS.sub.i,(j1)) via four respective phase shift introducing weak points (TU.sub.l,i,j, TU.sub.o,i,j, TU.sub.l,i,(j1), TU.sub.o(i+1),j). It is conceivable to preferably spatially periodically replace individual or all phase shift introducing weak points (TU.sub.l,i,j, TU.sub.o,i,j, TU.sub.l,i,(j1), TU.sub.o(i+1),j) by means of said ohmic connections, coupling capacitances, etc.

[0246] In the example of FIG. 34, the four metamaterial substructures each (MTS.sub.i,j, MTS.sub.(i+1),j, MTS.sub.i,(j+1), MTS.sub.(i+1),(j+1)) form a structure leaving open an opening (O.sub.i+1,j+1).

[0247] Ultimately, such a metamaterial is an electrical interconnection of electrical components to an overall circuit. If at least a part of the connections between the metamaterial substructures (MTS.sub.i,j, MTS.sub.(i+1),j, MTS.sub.i,(j+1), MTS.sub.(i+1),(j+1)) are carried out as a phase shift introducing weak points (TU.sub.l,i,j, TU.sub.o,i,j, TU.sub.l,i,(j1), TU.sub.o,(i+1),j) as in the exemplary FIG. 34, it is an interconnection of quantum interference devices. Therefore, a metamaterial is proposed that consists of a spatially periodic three-dimensional interconnection of quantum interference components or quantum interference sub-devices, here the metamaterial substructures (MTS.sub.i,j,k), or of a two-dimensional periodic two-dimensional interconnection of quantum interference components or quantum interference subdevices, here the metamaterial substructures (MTS.sub.i,j). The spatial, e.g. three-dimensional or two-dimensional periodicity may in each case relate to a translational shift or a rotational rotation.

[0248] For the sake of completeness, the sub-FIG. 34a represents the exemplary two-dimensional arrangement of the metamaterial substructures (MTS.sub.i,j). For a better overview, no reference numbers are entered for the respective weak points and the openings as well as the metamaterial substructures (MTS.sub.i,j) which introduce a phase shift. Only the reference symbols of the conductors (W.sub.i,j) are entered for overview. An exemplary meta-material substructures (MTS.sub.i,j) has been singled out and enlarged in subFIG. 34b. This should represent all metamaterial substructures (MTS.sub.i,j) within the metamaterial. Metamaterial substructures (MTS.sub.i,j) on the edge (i=1 or i=n or j=1 or j=m) may differ in their structure depending on the definition of the metamaterial substructure (MTS.sub.i,j). With sufficient size of the metamaterial, the resulting edge effects might be neglected as usual for metamaterials.

[0249] FIG. 35 schematically shows an exemplary combined micromechanical machine with an exemplary semiconductor substrate as carrier (Sub.sub.1).

[0250] FIG. 35 schematically shows a simplified principle cross-section through an integrated microelectronic circuit which is manufactured in the carrier (Sub.sub.1), which may be, for example, a piece of silicon wafer. For simplicity, this circuit is not further elaborated here. The micro-integrated circuit is protected by a metallization stack with typically several layers of insulator layers (OX1, OX2, OX3) and conductor layers (PLY, K1, K2). Other isolators than silicon oxide are conceivable. Also, whole metal/oxide stacks are conceivable as an insulator (OX).

[0251] As semiconducting structures, two contacts (K1, K2) are shown. It is known from the prior art that and how more complex semiconductor structures can be manufactured. The metallization stack is made more complex in order to carry out the micromechanical subsystems in the metallization stack in this example. It is known from the prior art that the implementation of micromechanical components can also take place in the substrate of the carrier (Sub.sub.1). For example, the metallization stack may comprise layers of metals (such as titanium, tungsten, gold, platinum, aluminum, iron, niobium, vanadium, manganese, etc.), insulators (such as silicon nitride, silicon oxide, etc.). and/or of amorphous or polycrystalline semiconductor layers (such as polycrystalline siliconalso called poly) or amorphous silicon or monocrystalline silicon or other corresponding semiconductor materials, in particular VI-materials and/or III/V materials and/or II/VI materials). This layer stack can therefore, as known from the prior art, at least partially be generated by bonding different substrates to each other, in particular by bonding of glass and semiconductor substrates. In the example of FIG. 35, as in FIG. 17, a first insulator layer (OX1), a second insulator layer (OX2) and a third insulator layer (OX3) and a polycrystalline silicon layer (PLY) are provided. In the example of FIG. 35, the polycrystalline silicon layer in subregions of the surface of the device below the third insulator layer (OX3) is now removed by surface micromechanical methods. This may happen, as described above, for example, by etching gases, as known in the art. With suitable structuring, a micromechanical rotor (LF) of the proposed micromechanical machine can be generated, which is electrostatically excited to vibrate, for example via the exemplary conductor tracks (L1, L2, L3, L4). Instead of the electrostatic excitation, a parallel or substitutional magnetic excitation comes into question. The excitation of the micromechanical electric machine can also be effected by means of a mixing method between electrostatic and magnetic excitation. Subdevices of this exemplary electric machine may also be caused to oscillate by an external electromagnetic field and thus interact with other electronic and electrical subdevices. For example, it is conceivable to place a Hall sensor in its stator. In that case, a Hall plate (HL) placed in the carrier (Sub.sub.1) below the rotor (LF) can help. This Hall plate can act as an electrostatic counter electrode to an electrode in the rotor.

[0252] For example, for an example current excitation, the first conductor line (L1) can be supplied with an electrical current of a first current amount in a first current direction and the third conductor line (L3) can be supplied with an electric current of the first current amount in a second current direction. The second current direction is opposite to the first current direction. The first conductor line (L1) is then the power supply line and the third trace (L3) is the power return line. The first conductor line (L1) and the third conductor line (L3) may then be considered as a first coil and generate a first magnetic flux (B.sub.1).

[0253] The second conductor line (L2) can be supplied for example with an electrical current having a second current amount in the first current direction and the fourth conductor line (L4) can be supplied with an electrical current having a second current amount in the second current direction. In this case, the second current direction is opposite to the first current direction. The second conductor line (L2) is then again the power supply line and the fourth conductor line (L4) is the power return line. The second conductor line (L2) and the fourth conductor line (L4) may then be considered as a second coil and generate a second magnetic flux (B.sub.2).

[0254] The first magnetic flux (B.sub.1) generated by the first coil (L1, L3) and the second magnetic flux (B.sub.2) generated by the second coil (L2, L4) are modified by the invention conform superconducting border region (G.sub.G) within the boundary region (G.sub.FB). This changes the energy content of the fields. As a result, the magnetic fields of the first coil (L1, L3) and the second coil (L2, L4) exert a force on the rotor (LF). The rotor (LF) is suspended for the purpose of mobility on the one hand via a first spring element (S1) and a second spring element (S2) and possibly in the cross section of FIG. 35 not visible further spring elements movable relative to the stator, which is formed by the first coil (L1, L3) and the second coil (L2, L4). The mobility is ensured by a cavity (CAV), that separates the rotor (LF) in its entire circumference and the spring elements (S1, S2) mechanically from the carrier (Sub.sub.1). It is immediately apparent to the person skilled in the art that the superconducting subcomponent, ie the substrate (G.sub.sub) can also be arranged in the stator with the superconducting border region (G.sub.G) and the first coil (L1, L3) and the second coil (L2, L4) can be arranged on the rotor. Combinations of these two variants of the arrangement of superconducting device parts on rotor (LF) and/or stator (Sub.sub.1) are possible.

[0255] By suitable implementation of the coils and of the rotor (LF) and/or of the at least partially superconducting substrate (G.sub.sub) with the border regions (G.sub.G) or interfaces (G.sub.F), it is possible to impress rotational momentums about the three axes of rotation of the rotor and/or translatory forces along the horizontal axes of translation. These forces can be mediated magnetically and/or electrostatically. Conversely, irradiating electromagnetic waves can interact with the rotor. This has the advantage that mechanical oscillators achieve a high resonator quality with suitable encapsulation in a housing in a high vacuum.

[0256] It is conceivable to provide permanent magnets, e.g. in the form of structured ferromagnetic layers, in the rotor (LF) and/or the stator (the substrate Sub.sub.1) in order to provide a bias flux without an electrical energy source.

[0257] For incorporation of the invention conform room temperature superconducting device parts by means of an adhesive (GL), the superconducting layer package, means the first substrate (G.sub.sub) with the actual superconducting border region (G.sub.G) in the boundary region (G.sub.FB), is attached on the rotor (LF) and thus indirectly on the carrier (Sub.sub.1) with the integrated microelectronic circuit. On this partial device, that is, for example, the rotor LF, which is elastically attached by spring elements (S1, S2) above said support (Sub.sub.1) with said exemplary Hall structure (HL), the superconducting room temperature first Substrate (G.sub.sub consisting of GB.sub.1, G.sub.B2, G.sub.FB, G.sub.G) is applied. This can be done, for example (and not be limitation) by gluing or clamping with a non-magnetic material, here the adhesive (GL). As a result, the micromechanical electrical machine in the form of the micromotor presented here with the rotor (LF) and the stator (Sub.sub.1) has at least one subdevice, the border region (G.sub.G), which is an electrical superconductor in the sense of this invention.

[0258] In the example, the Hall structure (HL) of FIG. 35 is electrically contacted via the first contact (K1) and the second contact (K2) by means of a first contact doping (KD1) and a second contact doping (KD2). The Hall structure in the example of FIG. 35 serves as an exemplary electrostatic counter electrode to electrically conductive structures of the rotor. In the example of FIG. 35, for example, this can be the first substrate (G.sub.sub). It will be apparent to those skilled in the art that prior to application of the substrate (G.sub.sub) the substrate (Sub.sub.1) may have been subjected to a microstructuring process on the substrate (Sub.sub.1), wherein on or in the substrate (Sub.sub.1) nano- or microelectronic circuits and/or nano- or micromechanical devices and/or micro-optical devices and/or or microfluidic devices may have been made. For example, this may be the product of a CMOS process.

[0259] The metallization stack of FIG. 35 consists of a first insulation layer, preferably a first oxide (OX1), which is preferably a gate oxide, and a second insulation layer (OX2), preferably a second oxide. Between the first insulating layer (OX1) and the second insulating layer (OX2), two exemplary conductor lines (L1, L2) are placed. This can preferably be produced by means of photolithography in a micromechanical photolithographic production process. An interaction now occurs between the current flow in the conductor lines (L1, L2) and the room temperature superconducting border region (G.sub.G) or the room temperature superconducting interface (G.sub.F) within the boundary region (G.sub.FB) of the substrate (G.sub.sub). The inductance per unit length of the conductor lines (L1, L2) is changed by the proximity of the room temperature superconducting substrate (G.sub.sub). More complex metallization stacks and doping structures within the carrier (Sub.sub.1) are possible. It can be seen from the prior art that the mechanical structure of such micromechanical devices can be made more complex.

[0260] FIG. 36 shows the exemplary micromechanical electrical machine of FIG. 35 in an exemplary plan view. The reference numerals of the exemplary visible surfaces are entered. The first conductor line (L1), the second conductor line (L2), the third conductor line (L3) and the fourth conductor line (L4) are indicated by dashed lines. It is assumed that the carrier (Sub.sub.1) still continues up and down and so can form the conductor lines for the first coil (L1, L3) and second coil (L2, L4) described above in FIG. 35. This is not shown for better clarity. By way of example, a first contact (K1), a second contact (K2), a third contact (K3) and a fourth contact (K4) are plotted for the van der-Pauw structure of the Hall structure (HL). The Hall structure (HL) can possibly be used as a sensor for determining the position of the rotor (LF). It is not absolutely necessary for the purely mechanical function.

[0261] FIG. 37 shows an exemplary flat coil with three turns schematically simplified in cross section.

[0262] FIG. 38 shows the same flat coil in plan view. The manufacturing process corresponds to one of the preceding manufacturing processes. The coil winding is made of one of the above-described materials with superconducting properties according to the invention. For example, by one of the structuring methods described above, the coil turns are then carved out from the first substrate (G.sub.sub). For the connection of the center contact, an insulator (IS) (insulating layer) is preveably applied to the first substrate (G.sub.sub). The connection is then made by a suitable metallization (M). This may include, for example, aluminum, gold, platinum, iridium, iron, copper, magnesium, tin, zinc, lead, etc. Possibly. the turns in the connection area must be bevelled at their outer edge.

[0263] The FIGS. 39 and 40 show two magnetically and/or electrostatically coupled conductor loops in cross-section and in plan view. The manufacturing process corresponds to one of the preceding manufacturing processes. The coil windings are manufactured from one of the above-described superconducting materials according to the invention. In the simplest case, a suitable substrate (G.sub.sub) is selected and applied to the carrier (Sub.sub.1). For example, by one of the structuring methods described above, the coil turns are then carved out from the first substrate (G.sub.sub). As a result, a first substrate (G.sub.sub1) and another substrate (G.sub.sub2) come into being. These figures represent a schematic simplified application example of the above technical teaching to a multi-port devicehere a two-ported devicewith at least two magnetically and/or electrostatically coupled to each other conductor lines.

[0264] FIG. 41 corresponds to FIG. 20 wherein an optical functional element, here an exemplary lens (OE), couples electromagnetic radiation with the first substrate (G.sub.sub). Furthermore, a coupling with an optically active optical waveguide (OA) takes place here. By suitable design of the shape of the first substrate (G.sub.sub) and of the optical waveguide (OA) and by filtering the electromagnetic radiation, the strength of the interaction on the first substrate (G.sub.sub) and/or the optically active optical waveguide (OA) are predetermined individually constructively. For example, it is conceivable that the first substrate (G.sub.sub)) is heated by radiation above its critical temperature (T.sub.c) and thus the interaction with the optical fiber (OA) is changed, which can be detected.

FEATURES OF THE INVENTION

[0265] The invention can also be described alternatively by one of the following feature groups, wherein the feature groups can be combined with each other as desired and also individual features of a feature group can be combined with one or more features of one or more other feature groups and/or one or more of the previously described embodiments. It is true that by layer region is meant layer and interface is to be understood as a special case of the border region within the boundary region between two layers with different graphite crystal structure.

Feature 1.0

[0266] Method of making an electrical or optical or magnetic or electronic device using the steps Providing (1) a first substrate (G.sub.sub) having at least two layer regions (G.sub.B1, G.sub.B2), [0267] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common interface (G.sub.F) and [0268] wherein the first layer region (G.sub.B1) consists of graphite with Bernal crystal structure (graphite-2H) with at least 3 atom layers with a respective thickness of exactly one atom per atomic layer, and [0269] wherein the second layer region (G.sub.B2) consists of graphite with rhombohedral crystal structure (English rhombohedral, graphite-3R) with at least 3 atom layers with a respective thickness of exactly one atom per atomic layer, and [0270] where the interface (G.sub.F) exhibits an orientation of its surface normal parallel to the hexagonal axis of symmetry (c) of the crystal lattice of the first layer region (G.sub.B1) and [0271] wherein the interface (G.sub.F) exhibits an orientation of their surface normal parallel to the hexagonal symmetry axis (d) of the crystal lattice of the second layer region (G.sub.B2) and [0272] wherein the interface (G.sub.F) exhibits at least partially, in border regions (G.sub.G), superconducting properties and wherein the interface (G.sub.F) at least partially exhibits a critical temperature (T.sub.c) which is higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T; [0273] Structuring (8) of the substrate (G.sub.sub), in particular by wet-chemical etching, ion or particle beam etching, focussed ion beam, plasma etching, electrochemical etching, shape cutting chipping technology, pressing, sintering, spark erosion, amorphization; [0274] Providing (13) contacts of the interface (G.sub.F).

Feature 1.1

[0275] Method according to feature 1.0 comprising the additional step [0276] Structuring of the superconducting portion of the interface (G.sub.F), the border region (G.sub.G), which has superconducting properties and wherein the border region (G.sub.G) has a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T, by restricting the superconductivity, in particular by amorphization.

Feature 1.2

[0277] Method according to feature 1.0 comprising the additional step [0278] Determine (2) the orientation of the surface normal (n.sub.F) of the interface (G.sub.F) within the substrate (G.sub.sub).

Feature 1.3

[0279] Method according to feature 1.0 comprising the additional step of [0280] determining (2) the position of the superconducting region, the border region (G.sub.G), the interface (G.sub.F) within the substrate (G.sub.sub) by means of a magnetic force microscope (MFM) or by means of another suitable measuring device for the distribution of a magnetic flux density or a magnetic field strength.

Feature 1.4

[0281] Method according to feature 1.0 or 1.2 comprising the additional step [0282] Thinning (3) of a layer region (G.sub.B1, G.sub.B2), hereinafter referred to as the respective layer region and creation of a lower boundary surface (UGF) parallel to the interface (G.sub.F), whereby the minimum thickness of the relevant layer region according to characteristic 1.0 is complied with.

Feature 1.5

[0283] Method according to features 1.3 or 1.4 comprising the additional step [0284] Thinning (3) and/or orientation of the surface normal (n.sub.F) of the interface (G.sub.F) within the substrate (G.sub.sub) by splitting off one or more graphene layers.

Feature 1.6

[0285] Method according to feature 1.2 comprising the additional step [0286] Applying (4) the thinned substrate (G.sub.sub) to the surface (OF) of a carrier (Sub.sub.1); [0287] Attaching (5) the thinned substrate (G.sub.sub) to the surface (OF) of the substrate (Sub.sub.1) by means of adhesion, formation of a carbide, formation of a eutectic or gluing (GL) or welding, in particular laser welding.

Feature 1.7

[0288] Method according to feature 1.2 or 1.6 comprising the additional step [0289] Thinning (6) of the layer region (G.sub.B1, G.sub.B2), hereafter the other layer region, which is not the relevant layer region, and creation of an upper boundary surface (OG.sub.F) parallel to the interface (G.sub.F), the minimum thickness of the other layer region according to characteristic 1.0 being complied.

Feature 1.8

[0290] Method according to one or more of the features 1.2 to 1.8 characterized in [0291] that the thinning is made by using at least one of the following methods [0292] shape cutting chipping technology and/or [0293] polishing and/or [0294] grinding and/or [0295] electrochemical polishing and/or [0296] chemical-mechanical polishing (CMP) and/or [0297] wet-chemical etching and/or [0298] ion etching and/or [0299] particle beam etching and/or [0300] chemical etching and/or [0301] plasma etching.

Feature 1.9

[0302] Method for producing a component according to one or more of the preceding features 1.0 to 1.8 comprising the steps [0303] Providing (7) a second substrate (SUB), which may be identical to the carrier (Sub.sub.1), [0304] wherein the second substrate (SUB) can be electrically insulating or electrically normal conducting or electrically semiconducting p-type or electrically semiconducting n-type or metallically electrically conductive; [0305] Carrying out a procedure according to feature 1.0.

Feature 1.10

[0306] Method for producing a component according to the preceding feature 1.9, characterized in [0307] that the second substrate (SUB) comprises a semiconducting electronic component, in particular, but not limited to, a diode, a PN diode, a Schottky diode, an ohmic resistance, a transistor, a PN P or PNP bipolar transistor, a diac, a triode, an n- or p-channel MOS transistor, a pip, or nin or pin diode, a solar cell, and/or [0308] that the second substrate (SUB) comprises a fluidic and/or microfluidic (MHD generator) and/or optical and/or micro-optical sub-component, and/or [0309] comprises an electronic or electrical component, in particular but not limited to a flat coil or a capacitor, which is manufactured in microstructure technology on the second substrate or in this second substrate (SUB).

Feature 1.11

[0310] Method for producing a component according to one or more of the preceding features 1.0 to 1.10 comprising the steps [0311] Applying (9) at least one electrically conductive layer (M) onto the first substrate (G.sub.sub) or second substrate (SUB), [0312] wherein the electrically conductive layer (M) may be electrically normally conducting or electrically semiconducting of the p-type conductivity or electrically semiconducting of the n-type conductivity or electrically metallically conducting.

Feature 1.12

[0313] Method for producing a component according to the preceding feature 1.11 comprising the steps [0314] Structuring (10) of the at least one normally conducting layer (M).

Feature 1.13

[0315] A method of manufacturing a device according to one or more of the preceding features 1.0 to 1.12 comprising the steps [0316] Applying (11) at least one electrically insulating layer (IS) to the first substrate (G.sub.sub) or the second substrate (SUB) or the carrier (Sub.sub.1) or on an electrically, in particular normal, conductive layer (M).

Feature 1.14

[0317] A method of manufacturing a device according to the preceding features 1.0 to 1.13 comprising the steps [0318] Structuring (12) the at least one insulating layer (IS).

Feature 1.15

[0319] Method for producing a component according to feature 1.11, characterized in [0320] that the electrically conductive layer (M) is in direct mechanical contact with the first substrate (G.sub.sub) at at least one point.

Feature 1.16

[0321] Method for producing a component according to feature 1.11, characterized in [0322] that the electrically insulating layer (IS) is in direct mechanical contact to the first substrate (G.sub.sub) at at least one point.

Feature 1.17

[0323] Method for producing a component according to one or more of the preceding features 1.0 to 1.16 [0324] Wherein the structuring (9, 11) comprises photolithographically and/or wet-chemically and/or by plasma etching and/or ion and particle beam bombardment and/or armophysation and/or e-beam irradiation and/or laser irradiation and/or mechanical cutting processes and/or forming processes, which are combined with a disruption of the interface (G.sub.F) in case of a structuring, which includes the structuring of the interface (G.sub.F).

Feature 1.18

[0325] Method for producing a component according to one or more of the preceding features 1.0 to 1.17 [0326] wherein at least parts of the first substrate (GSUb) with a method according to the technical teaching of AU 2015 234 343 A1, EP 2 982 646 A1 and the [0327] JP 5 697 067 B1 or another method for the production of graphite with a proportion of rhombohedral graphite of more than 1%.

Feature 2.0

[0328] Electrical or optical or magnetic or electronic component [0329] with a sub-device which has a first substrate (G.sub.sub) comprising at least two layer regions (G.sub.B1, G.sub.B2) [0330] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common interface (G.sub.F) and [0331] wherein the first layer region (G.sub.B1) consists of graphite with Bernal crystal structure (graphite 2H) with at least 3 atom layers with a respective thickness of exactly one atom, and [0332] wherein the second layer region (GR) consists of graphite with rhombohedral crystal structure (English rhombohedral, graphite-3R) and [0333] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal axis of symmetry (c) of the crystal lattice of the first layer region (G.sub.B1) and [0334] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal axis of symmetry (d) of the crystal lattice of the second layer region (G.sub.R) and [0335] wherein the interface (G.sub.F) has a border region (G.sub.G) with superconducting properties and wherein the border region (G.sub.G) has a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T and [0336] wherein the first substrate (G.sub.sub) is structured so that the outer edge of the interface (G.sub.F) in at least a portion of the first substrate (G.sub.sub) is changed by processing and [0337] wherein the interface (G.sub.F) has at least one electrical contact provided or adapted to electrically connect the interface (G.sub.F) to an electrical conductor.

Feature 3.0

[0338] Method for operating an electrical or optical or magnetic or electronic component [0339] Providing an electrical or optical or magnetic or electronic component, [0340] wherein the device having a superconducting sub-device with a critical temperature (T.sub.c) which is higher than 196 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T; [0341] energizing the electrical component at a temperature (T), which is above 196 C. and wherein within the superconducting sub-device, a current flow occurs.

Feature 4.0

[0342] Electrical or optical or magnetic or electronic component characterized in [0343] that it has at least one sub-device, which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50.

Feature 4.1

[0344] Component according to feature 4.0, characterized in [0345] that the electrical superconductor comprises carbon.

Feature 4.2

[0346] Component according to feature 4.1, characterized in that the electrical superconductor comprises carbon in rhombohedral crystal structure (graphite 3R).

Feature 4.3

[0347] Component according to feature 4.1 characterized in that the electric superconductor comprises carbon in Bernal crystal structure (graphite 2H).

Feature 4.4

[0348] Component according to feature 4.0 characterized in [0349] that it is intended, to be operated in a first state of operation at a working temperature (T.sub.a) above the critical temperature (T.sub.c) and [0350] that it is intended, to be operated in a second state of operation at a working temperature (T.sub.a) below the critical temperature (T.sub.c).

Feature 4.5

[0351] Component according to feature 4.0 characterized in [0352] that it has the shape of a longer rod, [0353] wherein the vector of the rod direction is parallel to a plane vector of the interface (G.sub.F),which is parallel to this, and [0354] wherein the rod is split in half, the first layer region (G.sub.B1) and the second layer region (G.sub.B2)

Feature 4.6

[0355] Component according to feature 4.5 characterized in [0356] that the electrical contacts (K) are made by means of metal caps at the ends of the rod, which are in particular placed on the rod.

Feature 4.7

[0357] Temperature sensor characterized in [0358] that it is an electrical component according to feature 4.4.

Feature 4.8

[0359] Component according to feature 4.0 characterized in [0360] that its conductivity depends on an external magnetic field.

Feature 4.9

[0361] Component according to feature 4.8 characterized in [0362] that the superconducting substructure has a topological genus higher than 0.

Feature 4.10

[0363] Component according to feature 4.0 characterized in [0364] that it is an electrical line.

Feature 4.11

[0365] conductor line (L1) according to feature 4.10, characterized in [0366] that it is guided with a distance to a second line (L3) according to feature 4.12, so that electrical properties of this line (L1) depend on the current flow in the second line (L3).

Feature 4.12

[0367] Conductor line according to feature 4.10, characterized in [0368] that at least one superconducting substructure is cylindrical.

Feature 4.13

[0369] Component according to feature 4.0 characterized in [0370] that it is an electric coil and/or [0371] that it is a flat coil and/or [0372] that it is a transformer and/or [0373] that it is a cylindrical coil.

Feature 4.14

[0374] Component according to feature 4.0, characterized in [0375] that it is a resonator or a microwave resonator or an antenna or an oscillator.

Feature 4.15

[0376] Component according to feature 4.0 characterized in [0377] that it is part of an electrical capacitor.

Feature 4.16

[0378] Component according to feature 4.0 characterized in [0379] that it has a bistable behavior.

Feature 4.17

[0380] Component according to feature 4.0, characterized in [0381] that it is or comprises a Josephson diode (TU.sub.1, TU.sub.2).

Feature 4.18

[0382] Component according to feature 4.17, characterized in [0383] that it is a Josephson memory (see DE2434997).

Feature 4.19

[0384] Component according to feature 4.0 characterized in that it is part of an antenna.

Feature 4.20

[0385] Component according to feature 4.11 characterized in that it is a quantum register bit.

Feature 5.0

[0386] Optical component characterized in [0387] that it has at least one sub-device, which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 5.1

[0388] Optical component according to feature 5.0, characterized in [0389] that the sub-device is intended to be used for coding data which is read out by means of the Faraday effect, [0390] wherein it is particularly intended to use monocrystalline ferrimagnetic garnet layers based on bismuth-substituted rare earth iron garnet of stoichiometry (Bi, SE).sub.3 (Fe, Ga).sub.5O.sub.12 as a magnetic field sensitive optical element.

Feature 6.0

[0391] Magnetic component characterized in [0392] that it comprises at least one subdevice having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 6.1

[0393] Magnetic component according to feature 6.1 characterized in [0394] that it is intended to be operated at a temperature below the critical temperature (T.sub.c) and/or at an external magnetic field below the critical magnetic flux density (B.sub.c).

Feature 6.2

[0395] Magnetic component according to feature 6.1 characterized in [0396] that, when used as intended, it exhibits a permanent magnetic field with a magnetic flux density (B) of more than 5 T.

Feature 6.3

[0397] Magnetic element according to feature 6.2 characterized in [0398] that it is a flux quantum generator (see DE 28 43 647).

Feature 7.0

[0399] Electric machine, which may be a rotating machine (FIG. 35) or a linear motor, characterized in [0400] that it comprises at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 50 C. and/or the critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T.

Feature 7.1

[0401] Electrical machine according to feature 7.0, characterized in [0402] that the superconducting sub-device (G.sub.sub) is part of a rotor and/or a rotor (LF) or a stator of the machine (FIG. 35).

Feature 8.0

[0403] Mobile device characterized in [0404] that it comprises at least one sub-device, which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T and [0405] that this subdevice is an energy storage device.

Feature 9.0

[0406] Energy storage characterized in [0407] that it comprises at least one sub-device having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T.

Feature 10.0

[0408] Medical device characterized in [0409] that it comprises at least one sub-device, which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77 K is higher than 1 T and/or 50 T.

Feature 11.0

[0410] Measuring device characterized in [0411] that it comprises at least one sub-device having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K the critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T.

Feature 12.0

[0412] Electrical or optical or magnetic or electronic component [0413] with a sub-device, having a first substrate (G.sub.sub) comprising at least two layer regions (G.sub.B1, G.sub.B2), [0414] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common interface (G.sub.F) and [0415] wherein the first layer region (G.sub.B1) comprises graphite having a Bernal crystal structure (graphite 2H) with at least 3 atomic layers with a respective thickness of exactly one atom, and [0416] wherein the second layer region (G.sub.B2) comprises graphite having a rhombohedral crystal structure (english rhombohedral, graphite-3R) and [0417] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal symmetry axis (c) of the crystal lattice of the first layer region (G.sub.B1) and [0418] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal axis of symmetry (d) of the crystal lattice of the second layer region (G.sub.B2) and [0419] wherein the interface (G.sub.F) has a border region (G.sub.G) with superconducting properties and where the border region (G.sub.G) has a critical temperature (Tc) that is higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T and [0420] wherein the first substrate (G.sub.sub) is structured so that the outer edge of the interface (G.sub.F) in at least a portion of the first substrate (G.sub.sub) is modified by processing and [0421] wherein the interface (G.sub.F) has at least one electrical contact provided or adapted to electrically connect the interface (G.sub.F) to an electrical conductor.

Feature 13.0

[0422] Electronic component (FIG. 14) [0423] with a Hall measurement structure (HL) or other electrical device, in which at least one electrical parameter depends on the magnetic flux density or the magnetic field strength that permeates this other electrical device
characterized in [0424] that it has at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T.

Feature 13.1

[0425] Electronic component according to feature 13.0 [0426] wherein the first sub-device of a first substrate (G.sub.sub) having at least two layer regions (G.sub.B1, G.sub.B2), and [0427] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B1) are arranged one above the other and have a common interface (G.sub.F) and [0428] wherein at least the first layer region (G.sub.B1) or the second layer region (G.sub.B1) is arranged above the Hall measurement structure (HL), [0429] wherein the first layer region (G.sub.B1) consists of graphite with Bernal crystal structure (graphite 2H) with at least 3 atom layers with a respective thickness of exactly one atom per atomic layer, and [0430] wherein the second layer region (G.sub.B2) consists of graphite with rhombohedral crystal structure (English rhombohedral, graphite-3R) with at least 3 atom layers with a respective thickness of exactly one atom per atomic layer, and [0431] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal axis of symmetry (c) of the crystal lattice of the first layer region (G.sub.B1) and [0432] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal axis of symmetry (d) of the crystal lattice of the second layer region (G.sub.B2) [0433] wherein the interface (G.sub.F) has a border region (G.sub.G) with at least partially superconducting properties, and [0434] wherein the border region (G.sub.G) has at least partially a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T.

Feature 14.0

[0435] Electronic component [0436] with at least one sub-device (G.sub.sub), which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T, [0437] wherein said first sub-device is a first substrate (G.sub.sub) having at least two layer regions (G.sub.B1, G.sub.B2), [0438] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common interface (G.sub.F) and [0439] wherein the first layer region (G.sub.B1) is a crystal of carbon with a first crystal structure, and [0440] wherein the second layer region (G.sub.B2) is a second carbon crystal having a first or second crystal structure, and [0441] wherein between the first crystal and the second crystal, an interface (G.sub.F) is formed, and [0442] wherein the interface (G.sub.F) has a border region (G.sub.G) with at least partially superconducting properties and wherein the border region (G.sub.G) has at least partially a critical temperature (T.sub.c), which is higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T.

Feature 14.1

[0443] Device according to feature 14.0 [0444] wherein at least the first layer region (G.sub.B1) or the second layer region (G.sub.B2) is arranged above or in the vicinity of a Hall measurement structure (HL) or another magnetic sensitive sensor or sensor element, [0445] wherein in the vicinity means that a magnetic field in that is generated by a current in the interface (G.sub.F) or the first layer region (G.sub.B1) or the second layer region (G.sub.B2), can change a parameter, in particular a measurement signal, of the Hall measurement structure (HL) or of the other magnetic sensitive sensor or sensor element.

Feature 15.0

[0446] Electronic component [0447] with an electronic sub-device (HL, FIG. 13), in particular a Hall measurement structure (HL), which changes an electrical parameter as a function of a magnetic field magnitude or of another parameter of the electromagnetic field, [0448] characterized in [0449] that there is at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or an electrical superconductor having a critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T.

Feature 15.1

[0450] Electronic component according to feature 15.0 [0451] wherein the first sub-device of a first substrate (G.sub.sub) comprising at least two layer regions (G.sub.B1, G.sub.B2), [0452] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common interface (G.sub.F) and [0453] wherein at least the first layer region (G.sub.B1) or the second layer region (G.sub.B2) is aranged on the Hall measurement structure (HL). [0454] wherein the first layer region (G.sub.B1) consists of graphite with Bernal crystal structure (graphite 2H) with at least 3 atom layers with a respective thickness of one atom per atomic layer and [0455] wherein the second layer region (G.sub.B2) consists of graphite with rhombohedral crystal structure (English rhombohedral, graphite-3R) with at least 3 atom layers with a respective thickness of exactly one atom per atomic layer and [0456] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal symmetry axis (c) of the crystal lattice of the first layer region (G.sub.B1) and [0457] wherein the interface (G.sub.F) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal symmetry axis (d) of the crystal lattice of the second layer region (G.sub.B2) [0458] wherein the interface (G.sub.F) has a border region (G.sub.G) with at least partially superconducting properties, and [0459] wherein the border region (G.sub.G) has at least partially a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or wherein the interface (G.sub.F) exhibits at least partially a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T.

Feature 16.0

[0460] Microelectronic circuit, in particular an integrated circuit, characterized in [0461] that it comprises at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or an electrical superconductor having a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 18.0

[0462] Micromechanical device, characterized in [0463] that it comprises at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or an electrical superconductor having a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 19.0

[0464] Microoptical device, characterized in [0465] that they have at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or an electrical superconductor having a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 19.1

[0466] Microoptical device according to feature 19.0, characterized in [0467] that it comprises at least one optical waveguide section which is suitable or provided such that its optical properties depend at least at times on a magnetic field generated by said sub-device.

Feature 20.0

[0468] Optical waveguide characterized in [0469] that it is combined with a sub-device (G.sub.sub) to obtain an overall device comprising an electrical superconductor having a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or an electrical superconductor having a critical magnetic flux density (B.sub.k) at e.g. 77 K higher than 1 T and/or 50 T and [0470] that at least one interaction between the sub-device (G.sub.sub) and the optical waveguide is measurable.

Feature 21.0

[0471] Microfluidic device, characterized [0472] that it comprises at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or an electrical superconductor having a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 22.0

[0473] A method of making an electrical or electronic or optical or magnetic device comprising the steps [0474] Providing a carrier (Sub.sub.1); [0475] Applying a first substrate (G.sub.sub) on the carrier (Sub.sub.1), [0476] wherein the substrate (G.sub.sub) has at least one subregion, which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 23.0

[0477] A method of making an electrical or electronic or optical or magnetic device comprising the steps [0478] Providing a first substrate (G.sub.sub) [0479] wherein the first substrate (G.sub.sub) has at least a partial region, which is an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T; [0480] Electrically contacting the first substrate (G.sub.sub).

Feature 24.0

[0481] Method for selecting natural room temperature superconductors for industrial use comprising the steps [0482] Providing a substrate for room temperature superconductivity testing, in particular for convenience at a temperature higher than 40 C.; [0483] Exposing the substrate to a magnetic field, with more than 0.5, better more than 1 T, better more than 2 T, better more than 4 T, better more than 8 T. [0484] Measurement of a region of the substrate with an MFM for localization of a line current.

Feature 24.1

[0485] Method according to feature 24.0 characterized by [0486] Storage of the substrate at more than 200 K and [0487] Re-measuring a region with a line current after a rest time of more than 5 minutes and/or more than one hour and/or more than one day and/or more than a week better one month to reconfirm superconductivity.

Feature 25.0

[0488] Electrical or electronic device characterized in [0489] that it comprises at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77 K higher than 1 T and/or 50 T.

Feature 27.0

[0490] Magnetic device characterized in [0491] that they have at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 28.0

[0492] Optical device characterized in [0493] that they have at least one sub-device (G.sub.sub) having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 360K and/or the critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 29.0

[0494] Electrical component and/or quantum interference component (FIG. 13) [0495] having at least one conductor (W, W1a, W1b, W2a, W2b), [0496] wherein in the at least one conductor (W) at least a first phase difference introducing weak point (TU.sub.1) is inserted and [0497] wherein the at least one conductor (W) is made at least partially and at least in the region of the first phase difference-introducing weak point (TU.sub.1) from a material which has an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density

[0498] (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 30.0

[0499] Electrical component and/or quantum interference component (FIG. 13) with a conductor (W, W1a, W1b, W2a, W2b), [0500] wherein the conductor (W) is divided in a first conductor branch (W1a, W1b) and a second conductor branch (W2a, W2b) and [0501] wherein the first conductor branch (W1a, W1b) and the second conductor branch (W2a, W2b) are arranged so that they at least partially enclose an area such that an opening (O1) is formed between the conductor branches and [0502] wherein the conductor (W) is at least partially made of a material having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 30.1

[0503] Electrical component and/or quantum interference component according to feature 30.0 [0504] wherein at least in the first conductor branch (W1a, W1b) a first phase difference-introducing weak point (TU1) is inserted.

Feature 30.2

[0505] Electrical component and/or quantum interference component according to feature 30.1 [0506] wherein also in the second conductor branch (W2a, W2b) a second phase difference inducing weak point (TU2) is inserted.

Feature 30.3

[0507] Electrical component and/or quantum interference component according to one or more of the features 30.0 to 30.2, [0508] where a phase difference-introducing weak point is formed by an insulator or [0509] wherein a phase difference-introducing weak point is formed by a local modification of the graphene layer stack sequence or [0510] wherein a phase difference-introducing weak point is formed by a region normally conducting at room temperature or [0511] wherein a phase difference-introducing weak point is formed by metal or [0512] wherein a phase difference-introducing weak point is formed by non-superconducting graphite regions within the conductor (W) at temperatures higher than 195 C.

Feature 30.4

[0513] Electrical component and/or quantum interference component according to one or more of the features 30.0 to 30.3, [0514] wherein a phase difference-introducing weak point is formed by a reduction of at least one cross-sectional dimension, in particular the width and/or thickness, of the conductor (W).

Feature 30.5

[0515] Electrical component and/or quantum interference component according to one or more of the features 30.0 to 30.4, [0516] wherein a phase difference-introducing weak point (TU.sub.1, TU.sub.2) is covered with a control electrode (G.sub.1, G.sub.2) which is electrically insulated from the conductor (W).

Feature 30.6

[0517] Electrical component and/or quantum interference component according to one or more of the preceding features 30.0 to 30.5, [0518] wherein a portion of a conductor branch (W1a, W1b) of the conductor (W) is covered with a control electrode (G.sub.1), which is electrically insulated vs. the conductor (W).

Feature 30.7

[0519] Electrical component and/or quantum interference component according to one or more of the preceding features 30.0 to 30.6, [0520] wherein the conductor (W) is manufactured on an at temperatures higher than 195 C. non-superconducting electrically conductive carrier (Sub.sub.1) or an electrically semiconducting carrier (Sub.sub.1) or an electrically insulating carrier (Sub.sub.1), [0521] wherein the surface of the carrier (Sub.sub.1) might comprise in particular [0522] graphite or [0523] doped or undoped silicon or doped or non-doped III/V semiconductors or doped or non-doped II/VI semiconductors or doped or non-doped diamond or [0524] SiN or SiO.sub.2 or Al.sub.2O.sub.3 or a ceramic or polymers or carbon compounds or [0525] Aluminum or chromium or tungsten or copper or iron or gold or platinum or other metals or compounds thereof.

Feature 30.8

[0526] Electrical component and/or quantum interference component according to feature 30.7, [0527] wherein the conductor (W) is electrically insulated from the electrically normally conducting or semiconducting carrier (Sub.sub.1)

Feature 31

[0528] Electrical circuit [0529] wherein the electrical circuit comprises at least one electrical component and/or quantum interference component according to one of the preceding features.

Feature 32

[0530] Electrical circuit (FIG. 34) according to feature 31, [0531] wherein it comprises an electrical component and/or quantum interference component according to feature 30.6, and [0532] wherein the voltage (v1) between a conductor branch (W1b, W2b) of the conductor (W) and at least one control electrode (G.sub.1) is controlled by a control voltage source (V1).

[0533] Electrical component and/or quantum interference component (FIG. 34) with a conductor (W, W1a, W1b) according to feature 30.0, [0534] wherein the electrical component and/or quantum interference component has a sub-device, which has the function of a Cooper pair box (English: Cooper Pair Box) and [0535] wherein the conductor (W) is subdivided into a first conductor section (W1a) and a second conductor section (W1b) by the at least one first phase difference-introducing weak point (TU.sub.1) and [0536] wherein the first conductor section (W1a) can be ohmically or capacitively or inductively electrically contacted by means of a first node (N1), and [0537] wherein the second conductor section (W1b) can be contacted capacitively by means of a coupling capacitor (C.sub.g) via a second node (N2), [0538] so that the second conductor section (W1b) represents the Cooper pair box.

Feature 33

[0539] Electrical component and/or quantum interference component (FIG. 35) with a conductor (W, W1a, W1b, Wie) according to feature 30.0, [0540] wherein the electrical component and/or quantum interference component has a sub-device, which has the function of a Cooper pair box (English: Cooper Pair Box), and [0541] wherein the conductor (W) is divided into a first conductor section (W1a) and a second conductor section (W1b) and a third conductor section (W1c) by the first phase-difference-introducing weak point (TU.sub.1) and a second phase-difference-introducing weak point (TU.sub.2) and [0542] wherein the first conductor section (W1a) can be ohmically or capacitively or inductively contacted electrically by means of a first node (N1), and [0543] wherein the second conductor section (W1b) can be contacted capacitively by means of a coupling capacitor (C.sub.g) via a second node (N2), and [0544] wherein the third conductor section (W1c) can be ohmically or capacitively or inductively electrically contacted by means of a third node (N3), [0545] so that the second conductor section (W1b) represents the Cooper pair box.

Feature 34

Metamaterial

[0546] with a one or two-dimensional periodic arrangement of (n1)*(m1) quantum interference devices with (n1) and (m1) as positive integer numbers.

Feature 35.0

[0547] Metamaterial [0548] with a two-dimensionally periodic arrangement of nm metamaterial substructures (MTS.sub.i,j) with n and m as positive integer numbers and 1<in and 1<jm, [0549] wherein each of the metamaterial substructures (MTS.sub.i,j), which is not at the edge of the metamaterial, together with the metamaterial substructures (MTS.sub.(i+1),j, MTS.sub.(i1),j, MTS.sub.i,(j+1), MTS.sub.i,(j1)) represents at least one sub-device of a quantum interference component.

Feature 36.0

[0550] Metamaterial [0551] with a two-dimensionally periodic arrangement of n*m metamaterial substructures (MTS.sub.i,j) with n and m as positive integer numbers and 1<in and 1<jm, [0552] wherein each of the metamaterial substructures (MTS.sub.i,j) has at least one associated conductor (W.sub.i,j), and [0553] wherein said conductor (W.sub.i,j) is at least partially made of a material having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 36.1

[0554] Metamaterial according to characteristic 36.0 [0555] wherein conductors (W.sub.i,j) of metamaterial substructures (MTS.sub.i,j) are connected ohmically, in particular by conductive or superconducting connections between the conductors (W.sub.i,j, W.sub.(i+1),j, W.sub.(i1),j, W.sub.i,(j+1), W.sub.(i,(j1)), and/or inductively, through openings in the conductors (W.sub.i,j, W.sub.(i+1),j, W.sub.(i1),j, W.sub.i,(j+1), W.sub.i,(j1)), and/or capacitively, by coupling surfaces of the conductors (W.sub.i,j, W.sub.(i+1),j, W.sub.(i1),j, W.sub.i,(j+1), W.sub.i,(j1)), with conductors (W.sub.(i+1),j, W.sub.(i1),j, W.sub.i,(j+1), W.sub.i,(j1)) of adjacent metamaterial substructures (MTS.sub.(i+1),j, MTS.sub.(i1),j, MTS.sub.i,(j+1), MTS.sub.i,(j1))

Feature 36.2

[0556] Metamaterial according to features 35.0 and/or 36.0 and/or 36.1 [0557] wherein conductors (W.sub.i,j) of metamaterial substructures (MTS.sub.i,j) are connected with conductors (W.sub.(i+1),j, W.sub.(i1),j, W.sub.i,(j+1), W.sub.i,(j1)) of adjacent metamaterial substructures (MTS.sub.(i+1),j, MTS.sub.(i1),j, MTS.sub.i,(j+1), MTS.sub.i,(j1)) via phase-shifting weak points (TU.sub.l,j,j, TU.sub.o,i,j, TU.sub.o,i,(j1), TU.sub.o,(i+1),j), in particular Josephson junctions.

Feature 37.0

[0558] Digital optical element for electromagnetic radiation [0559] having at least one partial structure which is at least partially made of a material which is an electrical superconductor having a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 38.0

[0560] Electrical or optical or magnetic or electronic device [0561] with a sub-device comprising a first substrate (G.sub.sub) comprising at least a first layer region (G.sub.B1) and a second layer region (G.sub.B2), [0562] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common first interface (G.sub.F1) between the first layer region (G.sub.B1) and the second layer region (G.sub.B2) and [0563] wherein the first layer region (G.sub.B1) consists of graphite with a first stacking sequence of at least 3 graphene layers, and [0564] wherein the second layer region (G.sub.B2) consists of graphite with a second stacking sequence of graphene layers, and [0565] wherein the over all stacking sequence with the first stacking sequence of the first layer region (G.sub.B1) and with the second stacking sequence of the second layer region (G.sub.B2) and the common interface (G.sub.F) together does not correspond to the first stacking sequence of the first layer region (G.sub.B1) [0566] wherein a portion of the over all stacking sequence, the border region (G.sub.G), exhibits superconducting properties with a critical temperature (T.sub.c) or a critical magnetic flux density (Bk) at e.g. 77K.

Feature 38.1

[0567] Electrical or optical or magnetic or electronic component according to characteristic 38.0 [0568] where the critical temperature (T.sub.c) or the critical magnetic flux density (B.sub.k) at e.g. 77K depends on the over all stacking sequence.

Feature 38.2

[0569] Electrical or optical or magnetic or electronic component according to feature 38.0 and/or 38.1 [0570] wherein the critical temperature (T.sub.c) is higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or [0571] wherein the critical magnetic flux density (B.sub.k) at e.g. 77K is higher than 1 T and/or 50 T.

Feature 38.3

[0572] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.2 [0573] wherein the first interface (G.sub.F1) has an orientation of its first surface normal (n.sub.F1) parallel to the hexagonal symmetry axis (c) of the crystal lattice of the graphene layers of the first layer region (G.sub.B1) and [0574] wherein the first interface (G.sub.F1) has an orientation of its first surface normal (n.sub.F1) parallel to the hexagonal symmetry axis (d) of the crystal lattice of the graphene layers of the second layer region (G.sub.B2).

Feature 38.4

[0575] Electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.3 [0576] wherein the first substrate (G.sub.sub) is structured so that the outer edge of the first interface (G.sub.F1) in at least a portion of the first substrate (G.sub.sub) has changed as a result of processing.

Feature 38.5

[0577] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.5 [0578] wherein the first interface (G.sub.F1) or a boundary region (G.sub.FB) of which part is the first interface (G.sub.F1) comprises at least one electrical contact (K), which is provided or suitable to electrically connect the first interface (G.sub.F1) or the boundary region (G.sub.FB), part of which is the first interface (G.sub.F1), to an electrical conductor.

Feature 38.6

[0579] An electrical or optical or magnetic or electronic device according to one or more of the features 38.0 to 38.5 [0580] wherein the first interface (G.sub.F1) or a boundary region (G.sub.FB), of which the first interface (G.sub.F1) is part, comprises at least one electrical contact (K), which is provided or adapted to electrically connect the first interface (G.sub.F1) or the boundary region (G.sub.FB), of which the first interface (G.sub.F1) is part, to an electrical conductor.

Feature 38.7

[0581] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.6 [0582] wherein the first stacking sequence of the first layer region (G.sub.B1) and/or the second stacking sequence of the second layer region (G.sub.B2) is the stacking sequence of bernal graphite or the stacking sequence of rhombohedral graphite.

Feature 38.8

[0583] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.7 [0584] wherein the first stacking sequence of the first layer region (G.sub.B1) is equal to the second stacking sequence of the second layer region (G.sub.B2), but the second stacking sequence is offset from the first stacking sequence by a translational displacement vector along the first interface (G.sub.F1) and/or is rotated with respect to the first stack sequence by a non-zero angle around a surface normal of the first interface (G.sub.F1).

Feature 38.9

[0585] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.8 [0586] wherein the first stacking sequence of the first layer region (G.sub.B1) is not equal to the second stacking sequence of the second layer region (G.sub.B2)

Feature 38.10

[0587] Electrical or optical or magnetic or electronic component according to one or more of features 38.0 to 38.9 [0588] having a sub-device, comprising a first substrate (G.sub.sub) having at least a first layer region (G.sub.B1) and a second layer region (G.sub.B2) and additionally a third layer region (G.sub.B3), [0589] wherein the second layer region (G.sub.B2) and the third layer region (G.sub.B3) are arranged one above the other and exhibit a common second interface (G.sub.F2) between the second layer region (G.sub.B2) and the third layer region (G.sub.B3), and [0590] wherein the third layer region (G.sub.B3) consists of graphite with a third stacking sequence of at least 3 graphene layers, and [0591] wherein the second layer region (G.sub.B2) can also comprise only one graphene layer or only two graphene layers or at least three graphene layers, and [0592] wherein the second overall stacking sequence with the second stacking sequence of the second layer region (G.sub.B2) and the third stacking sequence of the third layer region (G.sub.B3) and the second interface (G.sub.F2) together does not correspond to the second stacking sequence of the second layer region (G.sub.B2)

Feature 38.11

[0593] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.10 [0594] wherein the second interface (G.sub.F2) has an orientation of its second surface normal (n.sub.F2) parallel to the hexagonal symmetry axis (c) of the crystal lattice of the graphene layers of the third layer region (G.sub.B3) and [0595] wherein the second interface (G.sub.F2) has an orientation of its surface normals (n.sub.F2) parallel to the hexagonal symmetry axis (d) of the crystal lattice of the graphene layers of the second layer region (G.sub.B2).

Feature 38.12

[0596] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.11 [0597] wherein the third stacking sequence of the third layer region (G.sub.B3) is the stacking sequence of rhombohedral graphite or [0598] wherein the third stacking sequence of the third layer region (G.sub.B3) is the stacking sequence of bernal graphite.

Feature 38.13

[0599] Electrical or optical or magnetic or electronic component according to one or more of features 38.0 to 38.12 [0600] wherein the first stacking sequence of the first layer region (G.sub.B1) is equal to the third stacking sequence of the third layer region (G.sub.B3), but the stacking sequence is translationally offset from the first stacking sequence along the first interface (G.sub.F1) and/or [0601] wherein the first stacking sequence of the first layer region (G.sub.B1) is equal to the third stacking sequence of the third layer region (G.sub.B3), but the third stacking sequence is rotated with respect to the first stacking sequence by a non-zero angle around the surface normal of the first interface (G.sub.F1).

Feature 38.14

[0602] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.13 [0603] wherein the second stacking sequence of the second layer region (G.sub.B2) is equal to the third stacking sequence of the third layer region (G.sub.B3), but the third stacking sequence is translationally offset from the second stacking sequence along the second interface (G.sub.F2) and/or [0604] wherein the second stacking sequence of the second layer region (G.sub.B2) is equal to the third stacking sequence of the third layer region (G.sub.B3), but the third stacking sequence is rotated relative to the second stacking sequence by a non-zero angle about the surface normal of the second interface (G.sub.F2).

Feature 38.15

[0605] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.13, [0606] wherein the third stacking sequence of the third layer region (G.sub.B3) is not equal to the second stacking sequence of the second layer region (G.sub.B2).

Feature 38.16

[0607] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.15 [0608] wherein the third stacking sequence of the third layer region (G.sub.B3) is not equal to the first stacking sequence of the first layer region (G.sub.B1).

Feature 38.17

[0609] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.16 [0610] wherein the first layer region (G.sub.B1) arranged in the first stacking sequence (G.sub.B1) comprises at least three and/or at least six and/or at least 10 and/or at least 20 and/or at least 50 and/or at least 100 graphene layers and/or [0611] wherein the second layer region (G.sub.B2) arranged in the second stacking sequence (G.sub.B2) comprises at least one graphene layer and/or at least two and/or three and/or at least six and/or at least 10 and/or at least 20 and/or at least 50 and/or at least 100 graphene layers. [0612] wherein the third layer region (G.sub.B3), which is arranged in the third stacking sequence (G.sub.B3), contains at least three and/or at least six and/or at least 10 and/or at least 20 and/or at least 50 and/or at least 100 graphene Includes layers.

Feature 38.18

[0613] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.17 [0614] wherein at least one graphene layer of the first substrate (G.sub.sub) is doped with impurity atoms, in particular oxygen atoms and/or hydrogen atoms.

Feature 38.19

[0615] An electrical or optical or magnetic or electronic device according to one or more of features 38.0 to 38.18 [0616] wherein at least one graphene layer of the first substrate (G.sub.sub) is isotope-pure and/or [0617] wherein at least one graphene layer of the first substrate (G.sub.sub) comprises an at least 10% better 50%, better 100% different concentration of C.sup.13 isotopes compared to living organic biological material of the earth's surface.

Feature 38.20

[0618] A method of transporting electrical charge carriers through a device according to one or more of the preceding features 38.0 to 38.19 [0619] Providing the device according to one or more of the preceding features 38.0 to 38.19; [0620] Injecting of first charge carriers into the superconducting subregion and/or the boundary region (G.sub.FB) at a first location and simultaneously extracting second charge carriers of the same polarity as the first charge carriers at a second location, which differs from the first location, except for the quantum mechanical uncertainty.

Feature 39.0

[0621] Electric machine, which may be a rotary machine, a linear motor, characterized in [0622] that it has at least one sub-device, which is at least partially made of a material having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T.

Feature 39.1

[0623] Electric machine according to feature 39.0, characterized in [0624] that the superconducting sub device (G.sub.sub) is part of a rotor and/or a rotor (LF) and/or a stator of the machine.

Feature 39.2

[0625] Electric machine according to one or more of the preceding features 39.0 to 39.1 [0626] wherein the sub-device comprises a first substrate (G.sub.sub) having at least two layer regions (G.sub.B1, G.sub.B2), [0627] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common boundary region (G.sub.FB) and [0628] wherein the first layer region (G.sub.B1) consists of graphite with Bernal crystal structure (graphite 2H) with at least 3 atom layers with a respective thickness of exactly one atom, and [0629] wherein the second layer region (G.sub.B2) consists of graphite with rhombohedral crystal structure (English rhombohedral, graphite-3R) and [0630] wherein the boundary region (G.sub.FB) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal axis of symmetry (c) of the crystal lattice of the first layer region (G.sub.B1) and [0631] wherein the boundary region (G.sub.FB) has an orientation of its surface normal (n.sub.F) parallel to the hexagonal symmetry axis (d) of the crystal lattice of the second layer region (G.sub.B2) and [0632] wherein at least a portion of the boundary region (G.sub.FB), the border region (G.sub.G), has superconducting properties and wherein this subregion, the border region (G.sub.G), has a critical temperature (T.sub.c) higher than 195 C. and/or higher as 100 C. and/or higher than 50 C. and/or higher than 360K and/or a critical magnetic flux density (B.sub.k) at e.g. 77K, which is higher than 1 T and/or 50 T.

Feature 39.3

[0633] Electric machine according to one or more of the preceding features 39.0 to 39.2, characterized in [0634] that the electrical superconductor comprises carbon.

Feature 39.4

[0635] Electric machine according to one or more of the preceding features 39.0 to 39.3, characterized in [0636] that the electrical superconductor comprises carbon in a rhombohedral crystal structure (graphite 3R).

Feature 39.5

[0637] Electric machine according to one or more of the preceding features 39.0 to 39.4, characterized in [0638] that the electric superconductor has carbon in Bernal crystal structure (graphite 2H).

Feature 39.6

[0639] Electric machine according to one or more of the preceding features 39.0 to 39.5 [0640] wherein the dividing device comprises a first substrate (G.sub.sub) comprising at least a first layer region (G.sub.B1) and a second layer region (G.sub.B2), [0641] wherein the first layer region (G.sub.B1) and the second layer region (G.sub.B2) are arranged one above the other and have a common first interface (G.sub.F1) between the first layer region (G.sub.B1) and the second layer region (G.sub.B2), and [0642] wherein the first layer region (G.sub.B1) consists of graphite with a first stacking sequence of at least 3 graphene layers, and [0643] wherein the second layer region (G.sub.B2) consists of graphite with a second stacking sequence of graphene layers, and [0644] wherein the total stacking sequence with the first stacking sequence of the first layer region (G.sub.B1) and the second stacking sequence of the second layer region (G.sub.B2) and the common interface (G.sub.F) together does not correspond to the first stacking sequence of the first layer region (G.sub.B1) [0645] wherein a portion of the overall stacking sequence, the border region (G.sub.G), exhibits superconducting properties with a critical temperature (T.sub.c) or a critical magnetic flux density (B.sub.k) at e.g. 77K.

Feature 39.7

[0646] Electric machine according to characteristic 39.6 [0647] wherein the critical temperature (T.sub.c) or the critical magnetic flux density (B.sub.k) at e.g. 77K depends on the overall stacking sequence.

Feature 39.8

[0648] Electric machine according to one or more of the features 39.6 to 39.7 [0649] wherein the first stacking sequence of the first layer region (G.sub.B1) and/or the second stacking sequence of the second layer region (G.sub.B2) is the stacking sequence of bernal graphite or the stacking sequence of rhombohedral graphite.

Feature 39.9

[0650] Electric machine according to one or more of the features 39.0 to 39.5 [0651] wherein the subdevice comprises a first substrate (G.sub.sub) comprising at least a first layer region (G.sub.B1) and a second layer region (G.sub.B2) and additionally a third layer region (G.sub.B3), [0652] wherein the second layer region (G.sub.B2) and the third layer region (G.sub.B3) are arranged one above the other and have a common second interface (G.sub.F2) between the second layer region (G.sub.B2) and the third layer region (G.sub.B3), and [0653] wherein the third layer region (G.sub.B3) consists of graphite with a third stacking sequence of at least 3 graphene layers, and [0654] wherein the second layer region (G.sub.B2) can also comprise only one graphene layer or only two graphene layers or at least three graphene layers, and [0655] wherein the second overall stacking sequence with the second stacking sequence of the second layer region (G.sub.B2) and the third stacking sequence of the third layer region (G.sub.B3) and the second interface (G.sub.F2) together does not correspond to the second stacking sequence of the second layer region (G.sub.B2).

Feature 39.10

[0656] Electric machine according to characteristic 39.9 [0657] wherein the third stacking sequence of the third layer region (G.sub.B3) is the stacking sequence of rhombohedral graphite or wherein the third stacking sequence of the third layer region (G.sub.B3) is the stacking sequence of bernal graphite.

Feature 39.11

[0658] Electric machine according to one or more of the preceding features 39.0 to 39.10 [0659] wherein the machine has a rotor (LF) and [0660] wherein the machine has a stator (Sub.sub.1) and [0661] wherein the stator (Sub.sub.1) and/or the rotor (LF) comprise a sub-device which is at least partially made of a material having an electrical superconductor with a critical temperature (T.sub.c) higher than 195 C. and/or higher than 100 C. and/or higher than 50 C. and/or higher than 360K and/or with a critical magnetic flux density (B.sub.k) at e.g. 77K higher than 1 T and/or 50 T and [0662] wherein the stator (Sub.sub.1) and the rotor (LF) exert a force that is magnetic or electrostatic origin to each other by means of this sub-device.

Feature 39.12

[0663] Electrical machine, in particular according to one or more of the preceding features 39.0 to 39.11 [0664] where the machine has a rotor (LF) and [0665] where the machine has a stator (Sub.sub.1) and [0666] the rotor (LF) being provided to [0667] interact mechanically with an electromagnetic wave outside of the electrical machine, [0668] which radiates into the electric machine or is emitted by it.

Glossary

Graphene

[0669] Graphite layer, benzene rings, etc. Graphene is the common name for a modification of carbon with a two-dimensional structure, in which each carbon atom is surrounded by three others at an angle of 120, so that a honeycomb-shaped pattern is formed. Graphite is typically composed of graphene layers in rhombohedral or bernary stacking order.

Graphene Layer or Graphene Layer

[0670] For the purposes of this invention, a graphene layer has, at least at one point, at least one benzene ring, better the concatenation of at least two or more than two benzene rings. For a better understanding, here is an excerpt from Wikipedia: Graphene is the term for a modification of the carbon with a two-dimensional structure in which each carbon atom is surrounded at an angle of 120 by three others, so that a honeycomb-shaped pattern is formed. Since carbon is tetravalent, two double bonds must exist for each honeycomb, but they are not localized. It is a concatenation of benzene rings, as is often the case in aromatic compounds. Although a single benzene ring has three double bonds in the representation of the valence bar formula, contiguous benzene rings have in this representation formally only two double bonds per ring. Therefore, the structure can be better described by representing the delocalized bonds as a large circle in the benzene ring. The bonding conditions in graphene are described in the graphene structure. Graphene can be described as a polycyclic aromatic hydrocarbon. At the edge of the honeycomb lattice, other groups of atoms must be docked, butdepending on their sizehardly alter the properties of the graphene. In theory single-layer carbon layers, graphenes, were used to describe the structure and electronic properties of complex carbon materials for the first time. However, due to a rigorous mathematical theorem, the Mermin-Wagner theorem and its variants, infinitely extended and generally flat strictly two-dimensional structures are not possible because they are demonstrably thermodynamically unstable. Therefore, there was general astonishment among chemists and physicists when Konstantin Novoselov, Andre Geim and their coworkers in 2004 announced the appearance of free, single-layer graphene crystals. Their unexpected stability could be explained by the existence of metastable states or by the formation of an irregular crimping of the graphene layer. In 2010, Geim and Novoselov were awarded the Nobel Prize in Physics for their research, after having made a decisive contribution not only to the presentation of these systems,

[0671] In essence, stacking such single-layer layers creates the three-dimensional structure of graphite, which is structurally closely related to graphene. On the other hand, if one imagines the single-layer layers rolled up, stretched carbon nanotubes are obtained. Likewise, some of the six-membered rings can be replaced by five-membered rings, whereby the flat surface bulges into a spherical surface and fullerenes result in certain numerical ratios. For example 12 out of 32 rings, the smallest fullerene (C60) is created.

[0672] For the graphene structure from Wikipedia: All carbon atoms of graphene are sp2-hybridized, that is, each carbon atom can form three equivalent a bonds to other carbon atoms, resulting in a honeycomb structure also known from the layers of graphite The carbon-carbon bond lengths are all the same and are 142 pm (142*10.sup.12 m). The third unhybridized 2p orbitals are perpendicular to the graphene plane as well as in the graphite and form a delocalized -bonding system. Graphene thus consists of two equivalent sublattices A and B, to which the carbon atoms are assigned (Note: the sublattices A and B mentioned here do not correspond to the graphene layers A, B, C of the figures and the above description). The sublattices are shifted by the bond length a.sub.b from each other. The diatomic unit cell is represented by the lattice vectors a.sub.1 and a.sub.2 clamped. These point to the next but one neighbors. The length of the vectors and thus the lattice constant a can be calculated as

=|a.sub.1|=|a.sub.2|=sqrt(3)a.sub.b2.46 =246 pm

[0673] Graphene can be understood on the one hand as a single crystal, on the other hand as a giant molecule. Likewise, smaller molecules such as benzene, hexabenzocoronene or naphthalene can be seen as a hydrogen-substituted graphene fragments. Thus, when in this application graphene layers are mentioned, it also includes graphene segments and graphene fragments.

Microstructure Technology/Microtechnology

[0674] The microtechnology (also microstructure technology) deals with processes that are used for the production of bodies and geometric structures with dimensions in the micrometer range (0.1-1000 m). Structure sizes of less than 100 nanometers are indeed called nanotechnology. However, they are included in the terms of this disclosure by the terms microstructure technology and microtechnology.

Microelectronic Circuits

[0675] Microelectronic circuits in the sense of this disclosure are electrical circuits and devices that have been produced at least partially by microstructure/micro-technology/nanotechnology techniques.

Micromechanical Devices

[0676] Micromechanical devices in the sense of this disclosure are mechanical devices which have been produced at least partially by microstructure/microengineering/nanotechnology techniques.

Microoptical Devices

[0677] For the purposes of this disclosure, microoptical devices are optical devices which have been produced at least partially by microstructure/microengineering/nanotechnology techniques.

Microfluidic Devices

[0678] Microfluidic devices in the sense of this disclosure are in the broadest sense micromechanical devices which serve the transport, modification or other treatment of at least partially gaseous and/or at least partially liquid fluids and which have been produced at least partially by microstructure/microengineering/nanotechnology techniques.

Metamaterial

[0679] A metamaterial has a structure whose propagation-describing parameters for electric, magnetic, electromagnetic fields and waves as well as acoustic waves and plasma waves deviate from those normally found in nature. This is achieved by mostly periodic one-, two- and/or three-dimensional structures (cells, individual elements) of electrically or magnetically or electromagnetically or acoustically effective materials in their interior. Metamaterials can have a negative real part of the complex refractive index. In the transition from vacuum to such a metamaterial, waves can be broken beyond the perpendicular in the negative direction. Metamaterials can also have impurities that can be used for waveguiding.

[0680] The material used is at least partially a superconducting material in the sense of this invention as electrically or magnetically or electromagnetically or acoustically effective material.

[0681] In this sense a granular superconductor is considered to be a metamaterial,

[0682] A room temperature superconductor is a electrical conductor superconducting at room temperature (20 C.), wherein superconductivity can be detected, in particular, by any means described in the application.

LIST OF REFERENCES

[0683] 1 step of providing a first substrate (G.sub.sub) having at least two layer regions (G.sub.B1, G.sub.B2); [0684] 2 step of determining the orientation of the surface normals (n.sub.F) of the graphene layers of the boundary region (G.sub.FB) within the substrate (G.sub.sub); [0685] 3 step of thinning out a relevant layer region (G.sub.B1, G.sub.B2) and creating a lower boundary surface (UGF) parallel to the graphene layers of the boundary region (G.sub.FB); [0686] 4 step of applying the preferably thinned substrate (G.sub.sub) to the surface (OF) of a carrier (Sub.sub.1) [0687] 5 step of attaching the preferably thinned substrate (G.sub.sub) to the surface (OF) of the carrier (Sub.sub.1); [0688] 6 step of thinning the other layer region (G.sub.B1, G.sub.B2) which is not the relevant layer region; [0689] 7 step of providing a second substrate (SUB), for example in the form of a microelectronic circuit; [0690] 8 step of patterning the first substrate (G.sub.sub); [0691] 9 Depositing at least one electrically conductive layer on the first substrate (G.sub.sub) or on the second substrate (SUB), for example to produce the contacts; [0692] 10 structuring of the at least one electrically conductive layer; [0693] 11 step of applying at least one electrically insulating layer to the first substrate (G.sub.sub) or second substrate (SUB) or the carrier (Sub.sub.1) or to an electrically, in particular normal, conductive layer; [0694] 12 step of structuring the at least one insulating layer eg for opening the contacts or vias; [0695] 13 step of providing (13) the contacts to the graphene layers of the boundary region (G.sub.FB); [0696] A graphene layer with positioning A; [0697] B graphene layer with positioning B; [0698] B.sub.1 first magnetic flux; [0699] B.sub.2 second magnetic flux; [0700] B.sub.f magnetic flux density; [0701] BE micromechanical bar (in FIGS. 35 and 36, a free-floating plate); [0702] B.sub.k critical magnetic flux density; [0703] c Sixfold symmetry axis of the hexagonal unit cell of the graphite 2H structure [0704] C graphene layer with positioning C; [0705] C1 first capacitor; [0706] C2 second capacitor; [0707] C.sub.g coupling capacitor; [0708] CMP chemical-mechanical polishing; [0709] CPB Cooper Couple Box; [0710] CAV cavity; [0711] d hexagonal symmetry axis (d) of the crystal lattice of the second layer region (G.sub.B2); [0712] d.sub.L distance between a first conductor line and a second conductor line of the proposed material, which influence each other inductively and/or capacitively; [0713] DLC diamond like carbon (diamond-like layers); [0714] E1 first incoupling or outcoupling point; [0715] E2 second incoupling or output point; [0716] ELS electrically conductive layer; [0717] G.sub.A first graphene layer; [0718] G.sub.B1 first subset of graphene layers or first layer region in a first stacking sequence of graphene layers, preferably of graphite with bernal crystal structure (graphite 2H), less preferably of graphite with rhombohedral crystal structure (English rhombohedral, graphite 3R) having at least 3 atomic layers (graphene layers) each having a thickness of one atom per atomic layer. The first layer region is also referred to only briefly as the first layer; [0719] G.sub.B2 second subset of graphene layers or second layer region in a second stacking sequence of graphene layers, preferably of graphite with rhombohedral crystal structure (English rhombohedral, graphite-3R) less preferably of graphite with bernal crystal structure (English bernal graphite 2H) having at least 3 atomic layers (graphene layers) each having a thickness of one atom per atomic layer. The second layer region is also referred to only briefly as the second layer; [0720] G.sub.B3 third subset of graphene layers or third layer region in a third stacking sequence of graphene layers, preferably of graphite with bernal crystal structure (graphite 2H) with at least 3 atom layers (graphene layers) with a respective thickness of exactly one atom per atomic layer. The third layer area is also referred to only briefly as the third layer; [0721] G.sub.FB Boundary region of one or more graphene layers in a more general sense; [0722] G.sub.FB1 first boundary region of one or more graphene layers in the more general sense; [0723] G.sub.FB2 second boundary region of one or more graphene layers in a more general sense; [0724] G.sub.F boundary area and in particular interface between the first layer region (G.sub.B1) and the second layer region (G.sub.B2); [0725] G.sub.F1 first border region and in particular first interface between the first layer region (G.sub.B1) and second layer region (G.sub.B2); [0726] G.sub.F2 second border area and in particular second interface between the second layer region (G.sub.B2) and the third layer region (G.sub.B3); [0727] G.sub.G the superconducting border region (G.sub.G) within the boundary region (G.sub.FB); [0728] GL adhesive for bonding the superconductive layer package to the carrier (Sub.sub.1); [0729] GND1 first ground plane; [0730] GND2 second ground plane; [0731] Gs graphite substrate; [0732] G.sub.sub substrate (G.sub.sub) comprising at least two layer regions (G.sub.B1, G.sub.B2) and at least one interface (G.sub.F or G.sub.F1); [0733] HL Hall structure. Here it is an exemplary Hall structure in cross section; [0734] I.sub.e electron current; [0735] I.sub.p+ hole current; [0736] IS electrically insulating layer; [0737] K contact; [0738] K1 first contact; [0739] K2 second contact; [0740] K3 third contact; [0741] K4 fourth contact; [0742] KD1 first contact doping; [0743] KD2 second contact doping; [0744] L1 first conductor line. The first conductor line is preferably produced by means of photolithographic etching processes from a first metallization layer in the course of the production process. The first metallization layer is deposited on the first insulator layer (OX1). In the area of the contacts (K1, K2), the first metallization is applied directly to the semiconductor substrate of the carrier (Sub.sub.1); [0745] L2 second conductor line. The second conductor line is preferably processed by means of photolithographic etching processes from a first metallization layer in the course of the production process. The first metallization layer is deposited on the first insulator layer (OX1). In the area of the contacts (K1, K2), the first metallization is applied directly to the semiconductor substrate of the carrier (Sub.sub.1); [0746] L3 third conductor line. The third conductor line is preferably produced by means of photolithographic etching processes from a second metallization layer in the course of the production process. The second metallization layer is deposited on the second insulator layer (OX2). In the area of the contacts (K1, K2) it is preferred, but not necessarily, for the second metallization to be applied directly to the first metallization; [0747] LF micromechanical rotor (LF) of the proposed micromechanical machine; [0748] Li1 first inductivity; [0749] Li2 second inductivity; [0750] M metallization; [0751] MFM Magnetic Force Microscope; [0752] ML center conductor; [0753] MTS.sub.i,j,k metamaterial substructure in the i-th column and j-th row and k-th layer of the exemplary three-dimensional metamaterial; [0754] MTS.sub.i,j metamaterial substructure in the i-th column and j-th row of the two-dimensional exemplary metamaterial; [0755] MTS.sub.i+1 j metamaterial substructure in the (i+1)-th column and j-th row of the two-dimensional exemplary metamaterial; [0756] MTS.sub.i1,j metamaterial substructure in the (i1)-th column and j-th row of the two-dimensional exemplary metamaterial; [0757] MTS.sub.i+1,j+1 metamaterial substructure in the (i+1)-th column and (j+1)-th row of the two-dimensional exemplary metamaterial; [0758] MTS.sub.i1,j+1 Metamaterial substructure in the (i1)-th column and (j+1l)-th row of the two-dimensional exemplary metamaterials; [0759] MTS.sub.i+1,j1 Metamaterial substructure in the (i+1l)-th column and (j1)-th row of the two-dimensional exemplary metamaterials; [0760] MTS.sub.i1,j1 metamaterial substructure in the (i1)-th column and (j1)-th row of the two-dimensional exemplary metamaterial;

[0761] MTS.sub.i,j+1 metamaterial substructure in the i-th column and (j+1)-th row of the two-dimensional exemplary metamaterial; [0762] MTS.sub.i,j1 metamaterial substructure in the i-th column and (j1)-th row of the two-dimensional exemplary metamaterial; [0763] N1 first node; [0764] N2 second node; [0765] N3 third node; [0766] n.sub.F surface normal of the surface (OF); [0767] n.sub.F1 first surface normal of the first interface (G.sub.F1); [0768] n.sub.F2 second surface normal of the second interface (G.sub.F2); [0769] NMR nuclear magnetic resonance; [0770] OF surface of the carrier (Sub.sub.1); [0771] OA optically active layer (eg, layer exhibiting electro-optic effect, for example, Kerr effect); [0772] OF surface of the carrier (Sub.sub.1). If a Hall element is to be realized, it is preferred if the carrier is made of semiconducting material. The carrier may also include an integrated circuit; [0773] OGF upper interface (OGF) of the substrate (G.sub.sub) parallel to the graphene layers of the boundary region (G.sub.FB) after preferential thinning; [0774] OX insulator, typically SiO.sub.2 or silicon nitrite or silicon nitride. Other insulators, such as polyimide are conceivable; [0775] OX1 first insulator layer, typically SiO.sub.2 or silicon nitride or silicon nitride. Other insulators, such as polyimide are conceivable. Particularly preferred is the use of a gate oxide as the first insulator layer; [0776] OX2 second insulator layer, typically SiO.sub.2 or silicon nitride or silicon nitride. Other insulators, such as polyimide are conceivable. [0777] OX3 third insulator layer, typically SiO.sub.2 or silicon nitride or silicon nitride. Other insulators, such as polyimide are conceivable; [0778] PLY polycrystalline silicon layer. In the example of FIG. 17, the polycrystalline silicon layer must be selected from its material so as to be selectively etchable with respect to the second insulator layer (OX2) and the third insulator layer (OX3); [0779] S.sub.1 first spring; [0780] S.sub.2 second spring; [0781] SC space charge zone with increased electron density (dashed line); [0782] Sub1 carrier; [0783] SUB second substrate, which may be a microelectronic circuit, for example. The second substrate (SUB) may be identical to the carrier (Sub.sub.1); [0784] T temperature; [0785] T.sub.a working temperature; [0786] T.sub.c critical temperature; [0787] TSV through silicon via; [0788] TU.sub.1 first phase-shifting weak point, typically a Josephson junction; [0789] TU.sub.2 second phase-shifting weak point, typically a Josephson junction; [0790] TU.sub.i,i,j left phase shift introducing weak point for establishing connection between the conductor (W.sub.i,j) of the metamaterial substructure (MTS.sub.i,j) in the i-th column and the j-th row of the metamaterial and the conductor (W.sub.i1, j) of the metamaterial substructure (MTS.sub.i1,j) in the (i1)-th column and the j-th row of the metamaterial, typically a Josephson junction; [0791] TU.sub.l,i,j1 left phase shift introducing weak point for establishing connection between the conductor (W.sub.i,j1) of the metamaterial substructure (MTS.sub.i,j1) in the i th column and the (j1)-th line of the metamaterial and the conductor (W.sub.i,j) the metamaterial substructure (MTS.sub.i,j) in the i-th column and the j-th row of the metamaterial, typically a Josephson junction; [0792] TU.sub.o,i,j upper phase shift introducing weak point for establishing a connection between the conductor (W.sub.i,j) of the meta-material substructure (MTS.sub.i,j) in the i-th column and the j-th row of the metamaterial and the conductor (W.sub.i,j1) of the meta-material substructure (MTS.sub.i,j1) in the i-th column and the (j1)-th row of the metamaterial, typically a Josephson junction; [0793] TU.sub.o,i+1,j upper phase shift introducing weak point for establishing a connection between the conductor (W.sub.i+1,j) of the metamaterial substructure (MTS.sub.i+1,j) in the (i+1)-th column and the j-th row of the Metamaterial and the conductor (W.sub.i,j) of the metamaterial substructure (MTS.sub.i,j) in the i-th column and the j-th row of the metamaterial, typically a Josephson junction; [0794] UGF lower surface of the substrate (G.sub.sub) parallel to the graphene layers of the boundary region (G.sub.FB); created by thinning; [0795] v.sub.g control voltage; [0796] V.sub.g control voltage source; [0797] W conductor consisting of the described graphene layer packet; [0798] W1 first branch of the conductor (W); [0799] W1a first conductor line section of the first branch of the conductor (W); [0800] W1b second conductor line section of the first branch of the conductor (W); [0801] W1c third conductor line section of the first branch of the conductor (W); [0802] W2 second branch of the conductor (W); [0803] W2a first conductor line section of the second branch (W2) of the conductor (W); [0804] W2b second conductor line section of the second branch (W2) of the conductor (W); [0805] W.sub.i,j conductor of the metamaterial substructure (MTS.sub.i,j) in the i-th column and the j-th row of the metamaterial; [0806] W.sub.i+1,j conductor of the metamaterial substructure (MTS.sub.i+1,j) in the (i+1)-th column and the j-th row of the metamaterial; [0807] W.sub.i1,j conductor of the metamaterial substructure (MTS.sub.i1,j) in the (i1)-th column and the j-th row of the metamaterial; [0808] W.sub.i+1,j+1 conductor of the metamaterial substructure (MTS.sub.i+1,j+1) in the (i+1)-th column and the (j+1)-th row of the metamaterial; [0809] W.sub.i1,j+1 conductor of the metamaterial substructure (MTS.sub.i1,j+1) in the (i1)-th column and the (j+1)-th row of the metamaterial; [0810] W.sub.i+1,j1 conductor of the metamaterial substructure (MTS.sub.i+1,j1) in the (i+1)-th column and the (j1)-th row of the metamaterial; [0811] W.sub.i1,j1 conductor of the metamaterial substructure (MTS.sub.i1,j1) in the (i1)-th column and the (j1)-th row of the metamaterial; [0812] W.sub.i,j+1 conductor of the metamaterial substructure (MTS.sub.i,j+1) in the i-th column and the (j+1)-th row of the metamaterial; [0813] W.sub.i,j1 conductor of the metamaterial substructure (MTS.sub.i,j1) in the i-th column and the (j1)-th row of the metamaterial.