Projection optical system, exposure apparatus, and article manufacturing method

Abstract

The present invention provides a projection optical system including a first concave reflecting surface, a first convex reflecting surface, a second concave reflecting surface, and a third concave reflecting surface, wherein the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, and the third concave reflecting surface are arranged such that light from an object plane forms an image on an image plane by being reflected by the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, the first convex reflecting surface, and the third concave reflecting surface in an order named.

Claims

1. A projection optical system comprising a first concave reflecting surface, a first convex reflecting surface, a second concave reflecting surface, and a third concave reflecting surface, wherein the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, and the third concave reflecting surface are arranged such that light from an object plane forms an image on an image plane by being reflected by the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, the first convex reflecting surface, and the third concave reflecting surface in an order named, and wherein the first concave reflecting surface and the third concave reflecting surface are formed by one reflecting surface having one curvature radius, and the second concave reflecting surface is a reflecting surface different from the first concave reflecting surface and the third concave reflecting surface.

2. The system according to claim 1, further comprising a concave mirror including the first concave reflecting surface and the third concave reflecting surface, and which a hollow portion is provided in a central region, wherein a second concave mirror including the second concave reflecting surface is arranged in the hollow portion.

3. The system according to claim 1, wherein letting R2 be a curvature radius of the first convex reflecting surface, W1 be a distance between the first convex reflecting surface and the object plane with no reflecting surface existing, and W2 be a distance between the first convex reflecting surface and the image plane with no reflecting surface existing,
0.70W1/R21.0 or 0.70W2/R21.0 is satisfied.

4. The system according to claim 1, wherein letting R1 be a curvature radius of the first concave reflecting surface, R2 be a curvature radius of the first convex reflecting surface, R5 be a curvature radius of the third concave reflecting surface, D1 be a distance between the first concave reflecting surface and the first convex reflecting surface, and D2 be a distance between the first convex reflecting surface and the third concave reflecting surface,
0.87(R2+D1)/R11.15 or 0.87(R2+D2)/R51.15 is satisfied.

5. The system according to claim 1, wherein letting R1 be a curvature radius of the first concave reflecting surface, R3 be a curvature radius of the second concave reflecting surface, and R5 be a curvature radius of the third concave reflecting surface,
0.8R3/R11.25 or 0.8R3/R51.25 is satisfied.

6. The system according to claim 1, wherein letting R3 be a curvature radius of the second concave reflecting surface, Lt1 be a distance between the object plane and the second concave reflecting surface, and Lt2 be a distance between the second concave reflecting surface and the image plane, with no reflecting surface existing between the object plane and the first concave reflecting surface, and between the third concave reflecting surface and the image plane,
0.9R3/Lt11.1 or 0.9R3/Lt21.1 is satisfied.

7. The system according to claim 1, wherein letting W1 be a distance between the first convex reflecting surface and the object plane with no reflecting surface existing, W2 be a distance between the first convex reflecting surface and the image plane with no reflecting surface existing, Lt1 be a distance between the object plane and the second concave reflecting surface, and Lt2 be a distance between the second concave reflecting surface and the image plane, with no reflecting surface existing between the object plane and the first concave reflecting surface, and between the third concave reflecting surface and the image plane,
0.5W1/Lt10.7 or 0.5W2/Lt20.7 is satisfied.

8. The system according to claim 1, further comprising a lens having an aspherical shape between the object plane, the image plane, and the first convex reflecting surface.

9. The system according to claim 1, further comprising a meniscus lens having a first surface and a second surface curved in the same direction, between the first convex reflecting surface and the second concave reflecting surface.

10. The system according to claim 1, wherein at least one of the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, and the third concave reflecting surface has an aspherical shape.

11. The system according to claim 1, further comprising an aperture stop between the first convex reflecting surface and the second concave reflecting surface.

12. The system according to claim 11, wherein an aperture shape of the aperture stop is variable.

13. The system according to claim 1, wherein the projection optical system is one of an enlarging system and a reducing system.

14. The system according to claim 13, wherein letting R1 be a curvature radius of the first concave reflecting surface, R5 be a curvature radius of the third concave reflecting surface, and B be an image formation magnification of the projection optical system,
B0.87(R5/R1)B1.15 is satisfied.

15. The system according to claim 1, wherein the projection optical system is telecentric on the object plane side and the image plane side.

16. An exposure apparatus comprising: an illumination optical system configured to illuminate a mask with light from a light source; and a projection optical system configured to project an image of a pattern of the mask onto a substrate, wherein the projection optical system comprises a first concave reflecting surface, a first convex reflecting surface, a second concave reflecting surface, and a third concave reflecting surface, the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, and the third concave reflecting surface are arranged such that light from an object plane forms an image on an image plane by being reflected by the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, the first convex reflecting surface, and the third concave reflecting surface in an order named, and wherein the first concave reflecting surface and the third concave reflecting surface are formed by one reflecting surface having one curvature radius, and the second concave reflecting surface is a reflecting surface different from the first concave reflecting surface and the third concave reflecting surface.

17. A method of manufacturing an article, the method comprising: forming a pattern on a substrate using an exposure apparatus; and developing the exposed substrate to manufacture the article, wherein the exposure apparatus comprises: an illumination optical system configured to illuminate a mask with light from a light source; and a projection optical system configured to project an image of a pattern of the mask onto the substrate, wherein the projection optical system comprises a first concave reflecting surface, a first convex reflecting surface, a second concave reflecting surface, and a third concave reflecting surface, the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, and the third concave reflecting surface are arranged such that light from an object plane forms an image on an image plane by being reflected by the first concave reflecting surface, the first convex reflecting surface, the second concave reflecting surface, the first convex reflecting surface, and the third concave reflecting surface in an order named, and wherein the first concave reflecting surface and the third concave reflecting surface are formed by one reflecting surface having one curvature radius, and the second concave reflecting surface is a reflecting surface different from the first concave reflecting surface and the third concave reflecting surface.

18. A projection optical system in which each reflecting surface is arranged such that light from an object plane forms an image on an image plane by being reflected by a first reflecting surface, a second reflecting surface, a third reflecting surface, a fourth reflecting surface, and a fifth reflecting surface in an order named, wherein the first reflecting surface and the fifth reflecting surface are formed by one concave reflecting surface and the third reflecting surface is a reflecting surface different from the first reflecting surface and the fifth reflecting surface.

19. The system according to claim 18, wherein the concave reflecting surface forming the first reflecting surface and the fifth reflecting surface includes one curvature radius.

20. The system according to claim 18, wherein the first reflecting surface, the third reflecting surface and the fifth reflecting surface are concave reflecting surfaces, and the second reflecting surface and the fourth reflecting surface are convex reflecting surfaces.

21. The system according to claim 18, wherein letting R1 be a curvature radius of the first reflecting surface, R3 be a curvature radius of the third reflecting surface, and R5 be a curvature radius of the fifth reflecting surface,
0.8R3/R11.25 or 0.8R3/R51.25 is satisfied.

22. An exposure apparatus comprising: an illumination optical system configured to illuminate a mask with light from a light source; and a projection optical system configured to project an image of a pattern of the mask onto a substrate, wherein the projection optical system includes each reflecting surface is arranged such that light from an object plane forms an image on an image plane by being reflected by a first reflecting surface, a second reflecting surface, a third reflecting surface, a fourth reflecting surface, and a fifth reflecting surface in an order named, and wherein the first reflecting surface and the fifth reflecting surface are formed by one concave reflecting surface and the third reflecting surface is a reflecting surface different from the first reflecting surface and the fifth reflecting surface.

23. A method of manufacturing an article, the method comprising: forming a pattern on a substrate using an exposure apparatus; and developing the exposed substrate to manufacture the article, wherein the exposure apparatus comprises: an illumination optical system configured to illuminate a mask with light from a light source; and a projection optical system configured to project an image of a pattern of the mask onto the substrate, wherein the projection optical system includes each reflecting surface is arranged such that light from an object plane forms an image on an image plane by being reflected by a first reflecting surface, a second reflecting surface, a third reflecting surface, a fourth reflecting surface, and a fifth reflecting surface in an order named, and wherein the first reflecting surface and the fifth reflecting surface are formed by one concave reflecting surface and the third reflecting surface is a reflecting surface different from the first reflecting surface and the fifth reflecting surface.

24. A projection optical system in which each reflecting surface is arranged such that light from an object plane forms an image on an image plane by being reflected by a first reflecting surface, a second reflecting surface, a third reflecting surface, a fourth reflecting surface, and a fifth reflecting surface in an order named, wherein letting Lt1 be a distance between the object plane and the third reflecting surface, Lt2 be a distance between the third reflecting surface and the image plane, Pt1 be a distance between the first reflecting surface and the third reflecting surface, and Pt2 be a distance between the third reflecting surface and the fifth reflecting surface, with no reflecting surface existing between the object plane and the first reflecting surface, and between the fifth reflecting surface and the image plane,
0.05Pt1/Lt10.2 or 0.05Pt2/Lt20.2 is satisfied.

25. The system according to claim 24, wherein a concave reflecting surface forming the first reflecting surface and the fifth reflecting surface includes one curvature radius.

26. The system according to claim 24, wherein the first reflecting surface, the third reflecting surface and the fifth reflecting surface are concave reflecting surfaces, and the second reflecting surface and the fourth reflecting surface are convex reflecting surfaces.

27. The system according to claim 26, wherein the third reflecting surface is a reflecting surface different from the first reflecting surface and the fifth reflecting surface.

28. The system according to claim 24, wherein letting R1 be a curvature radius of the first reflecting surface, R3 be a curvature radius of the third reflecting surface, and R5 be a curvature radius of the fifth reflecting surface,
0.8R3/R11.25 or 0.8R3/R51.25 is satisfied.

29. An exposure apparatus comprising: an illumination optical system configured to illuminate a mask with light from a light source; and a projection optical system configured to project an image of a pattern of the mask onto a substrate, wherein the projection optical system includes each reflecting surface is arranged such that light from an object plane forms an image on an image plane by being reflected by a first reflecting surface, a second reflecting surface, a third reflecting surface, a fourth reflecting surface, and a fifth reflecting surface in an order named, and wherein letting Lt1 be a distance between the object plane and the third reflecting surface, Lt2 be a distance between the third reflecting surface and the image plane, Pt1 be a distance between the first reflecting surface and the third reflecting surface, and Pt2 be a distance between the third reflecting surface and the fifth reflecting surface, with no reflecting surface existing between the object plane and the first reflecting surface, and between the fifth reflecting surface and the image plane,
0.05Pt1/Lt10.2 or 0.05Pt2/Lt20.2 is satisfied.

30. A method of manufacturing an article, the method comprising: forming a pattern on a substrate using an exposure apparatus; and developing the exposed substrate to manufacture the article, wherein the exposure apparatus comprises: an illumination optical system configured to illuminate a mask with light from a light source; and a projection optical system configured to project an image of a pattern of the mask onto the substrate, wherein the projection optical system includes each reflecting surface is arranged such that light from an object plane forms an image on an image plane by being reflected by a first reflecting surface, a second reflecting surface, a third reflecting surface, a fourth reflecting surface, and a fifth reflecting surface in an order named, and wherein letting Lt1 be a distance between the object plane and the third reflecting surface, Lt2 be a distance between the third reflecting surface and the image plane, Pt1 be a distance between the first reflecting surface and the third reflecting surface, and Pt2 be a distance between the third reflecting surface and the fifth reflecting surface, with no reflecting surface existing between the object plane and the first reflecting surface, and between the fifth reflecting surface and the image plane,
0.05Pt1/Lt10.2 or 0.05Pt2/Lt20.2 is satisfied.

31. The system according to claim 1, wherein the first concave reflecting surface and the third concave reflecting surface are formed by one concave mirror and the second concave reflecting surface reflects light passed through an opening provided in a center of the concave mirror.

32. The system according to claim 18, wherein the first reflecting surface and the fifth reflecting surface are formed by one concave mirror and the third reflecting surface reflects light passed through an opening provided in a center of the concave mirror.

33. The system according to claim 24, wherein
0.05Pt1/Lt10.2 or 0.05Pt2/Lt20.2 are satisfied.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1A to 1C are views for explaining a projection optical system according to Example 1 of the present invention.

(2) FIGS. 2A to 2C are views for explaining a projection optical system according to Example 2 of the present invention.

(3) FIGS. 3A to 3C are views for explaining a projection optical system according to Example 3 of the present invention.

(4) FIGS. 4A to 4C are views for explaining a projection optical system according to Example 4 of the present invention.

(5) FIGS. 5A to 5C are views for explaining a projection optical system according to Example 5 of the present invention.

(6) FIGS. 6A to 6C are views for explaining a projection optical system according to Example 6 of the present invention.

(7) FIGS. 7A to 7C are views for explaining a projection optical system according to Example 7 of the present invention.

(8) FIGS. 8A and 8B are views for explaining a projection optical system according to Example 8 of the present invention.

(9) FIGS. 9A and 9B are views for explaining a projection optical system according to Example 9 of the present invention.

(10) FIGS. 10A and 10B are views for explaining a projection optical system according to Example 10 of the present invention.

(11) FIGS. 11A and 11B are views for explaining a projection optical system according to Example 11 of the present invention.

(12) FIG. 12 is a view showing the definitions of dimensions of an optical system according to an embodiment.

(13) FIGS. 13A and 13B are views for explaining the sizes of optical systems.

(14) FIG. 14 is a view for explaining influences which the pupil projection amount has on an aberration and the size of the optical system.

(15) FIG. 15 is a view showing the arrangement of an exposure apparatus according to an aspect of the present invention.

DESCRIPTION OF THE EMBODIMENTS

(16) Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. Note that the same reference numerals denote the same members throughout the drawings, and a repetitive description thereof will not be given.

(17) This embodiment proposes an optical system which implements both a small size and high performance (accurate aberration correction) when increasing the NA. More specifically, in a three-mirror, five-time-reflection system, the amount of projection of a mirror positioned on the pupil plane from a main mirror, the concentricity of three mirrors, and the distance between an object plane or image plane and the apex (spherical center) of each mirror are defined. By defining these conditions, this embodiment proposes an optical system which increases the degree of freedom of the system by using three mirrors, and decreases the total length, without impairing the advantage of concentric mirror systems (two mirror systems) close to an aplanatic state. The dimensions of this optical system are defined as shown in FIG. 12. Note that a mirror (reflecting surface) can be either horizontally symmetrical or asymmetrical with respect to the optical axis of the optical system, and can also be divided on the left and right sides of the optical axis of the optical system.

(18) The optical system according to this embodiment forms an image of light from an off-axis point of an arcuated object plane onto an arcuated image plane by reflecting the light in the order of a first concave mirror M1, a first convex mirror M2, a second concave mirror M3 (a pupil plane), the first convex mirror M2, and a third concave mirror M5. The first concave mirror M1 functions as a first concave reflecting surface, the first convex mirror M2 functions as a first convex reflecting surface, the second concave mirror M3 functions as a second concave reflecting surface, and the third concave mirror M5 functions as a third concave reflecting surface. The second concave mirror M3 is placed in a position far from the object plane than the first concave mirror M1. Also, the optical system according to this embodiment is basically often used in a state in which a first bending mirror for bending an optical path is placed between the first concave mirror M1 and the object plane, and a second bending mirror is placed between the third concave mirror M5 and the image plane. To facilitate understanding the optical system according to this embodiment, however, an explanation will be made by assuming that the first bending mirror and second bending mirror (no-power mirrors (reflecting surfaces)) do not exist.

(19) Let R1, R2, R3, and R5 respectively be the curvature radii of the first concave mirror M1, first convex mirror M2, second concave mirror M3, and third concave mirror M5. Let D1 be the distance between the first concave mirror M1 and the first convex mirror M2, and D2 be the distance between the first convex mirror M2 and the third concave mirror M5. Let W1 be the distance (working distance) between the object plane (an object plane when there is no first bending mirror) and the first convex mirror M2, and W2 be the distance (working distance) between the image plane (an image plane when there is no second bending mirror) and the first convex mirror M2. Let Lt1 be the distance (optical length) between the object plane and the second concave mirror M3, and Lt2 be the distance (optical length) between the image plane and the second concave mirror M3. Let B be an image formation magnification.

(20) The optical system according to this embodiment satisfies conditions 1, 2, 3, 4, 5, 6, and 7 below.
0.05Pt1/Lt10.2 or 0.05Pt2/Lt20.2Condition 1:

(21) Condition 1 is a condition found design-wise by the present inventor, and defines the projection amount of the pupil plane with respect to the total length of the optical system. One of the most fundamental conditions under which the optical system becomes aplanatic is a state in which power optical elements such as mirrors and lenses are concentrically arranged and an object plane is positioned in the spherical center. When compared to a two-mirror, five-time-reflection system, a three-mirror, five-time-reflection system increases the degree of freedom of design, but tends to deviate from the concentricity between mirrors. Condition 1 achieves both of these conflicting conditions, and means a region where the optical element (the second concave mirror M3 or lens L2) positioned on the pupil plane corrects aberration most effectively. Condition 1 also contributes to decreasing the total length of the optical system.
0.70W1/R21.0 or 0.70W2/R21.0Condition 2:

(22) Condition 2 defines the concentricity of the first convex mirror M2 (the curvature radius R2) and the object plane. As described above, as the object plane approaches the spherical center of a mirror, the concentricity of the whole optical system increases, and aberrations such as a spherical aberration and halo of an off-axis image height improve. Also, in an actual layout, securing the distance W1 between the object plane and the first convex mirror M2 makes it possible to arrange bending mirrors, and arrange a mask and substrate parallel to each other in an exposure apparatus and synchronously scan them.
0.87(R2+D1)/R11.15 or 0.87(R2+D2)/R51.15Condition 3:

(23) Condition 3 defines the concentricity of the first concave mirror M1 and first convex mirror M2.
0.8R3/R11.25 or 0.8R3/R51.25Condition 4:

(24) Condition 4 defines the concentricity of the first concave mirror M1 and second concave mirror M3.
0.9R3/Lt11.1 or 0.9R3/Lt21.1Condition 5:

(25) Condition 5 defines the concentricity of the second concave mirror M3 and object plane.

(26) As described above, conditions 3, 4, and 5 contribute to improving aberrations such as a spherical aberration.
0.5W1/Lt10.7 or 0.5W2/Lt20.7Condition 6:

(27) Condition 6 limits the total length (the distances Lt1 and Lt2) of the optical system with respect to the necessary working distance (the distances W1 and W2). When a screen size to be exposed is designated in an exposure apparatus, an exposure width and arcuated image height are determined based on the designated size. A predetermined working distance is required to place a bending mirror which reflects the whole exposure light in the optical path. Condition 6 can limit the total length of the optical system even when the working distance increases.
B0.87(R5/R1)B1.15Condition 7:

(28) The optical system according to this embodiment includes a lens having an aspherical shape in the vicinity of the object plane and image plane (between the first convex mirror M2 and the object plane and image plane). Also, the optical system according to this embodiment includes a meniscus lens having first and second surfaces curved in the same direction in the vicinity of the second concave mirror M3 (between the first convex mirror M2 and the second concave mirror M3). In the optical system according to this embodiment, at least one of the first concave mirror M1, first convex mirror M2, second concave mirror M3, and third concave mirror M5 has an aspherical shape. The optical system according to this embodiment includes a stop having a variable aperture between the first convex mirror M2 and the second concave mirror M3. The optical system according to this embodiment is telecentric to the object plane side and image plane side.

(29) The following examples demonstrate the validity of the numerical values in conditions 1 to 7. If the lower limits or upper limits of these conditions are exceeded, the concentricity of the optical system breaks, so the resolving power decreases as aberrations worsen. In addition, the size of the optical system increases.

Example 1

(30) FIG. 1A is a sectional view showing the arrangement of a projection optical system 10 of Example 1. The projection optical system 10 includes a first concave mirror M1 having positive power, a first convex mirror M2 having negative power, a second concave mirror M3 having positive power, and a third concave mirror M5 having positive power.

(31) Since the projection optical system 10 is an equal-magnification system in Example 1, the first concave mirror M1 and third concave mirror M5 are optically identical mirrors. Accordingly, the first concave mirror M1 and third concave mirror M5 can be formed by a donut-like integrated mirror having a hollow portion in the middle, and can also be formed by different mirrors.

(32) A lens L1 is placed near an object plane O, and a lens L3 is placed near an image plane I. A lens L2 is placed near the second concave mirror M3. Light from the object plane O forms an image on the image plane I through the lens L1, first concave mirror M1, first convex mirror M2, lens L2, second concave mirror M3, lens L2, first convex mirror M2, third concave mirror M5, and lens L3 in this order. The second concave mirror M3 is placed on the pupil plane of the projection optical system 10. In addition, an aperture stop is placed near the second concave mirror M3. A principal ray of each object image point passing through the center of the optical axis of the projection optical system 10 becomes telecentric on the object plane. The aperture stop may have a mechanism by which the aperture diameter or aperture shape is variable. This makes it possible to set optimum numerical apertures in accordance with various exposure processes. More specifically, when the resolution line width is large, it is possible to obtain a necessary resolving power and widen the depth of focus at the same time by decreasing the aperture diameter of the aperture stop. Note that the second concave mirror M3 itself may have the function of the aperture stop, instead of using the aperture stop in addition to the second concave mirror M3.

(33) The lenses L1 and L3 are not necessarily essential. However, the lenses L1 and L3 are preferably installed as aspherical lenses in order to correct the image field curvature of an off-axis image height and the astigmatism, and expand a good-image region. In this case, these aspherical lenses preferably have practically no power in order to solve the problems of the above-described lens systems. The lens L2 is a so-called meniscus lens (including flat glass having an infinite curvature) having refractive surfaces curved in the same direction. The lens L2 mainly contributes to correcting a chromatic aberration generated by the lenses L1 and L3. The curving direction of the refractive surfaces of the lens L2 is preferably the same direction as that of the second concave mirror M3 from the viewpoint of the concentricity. The lens L2 has practically no power like the lenses L1 and L3, and hence contributes to solving the problems of the above-described lens systems.

(34) FIG. 1B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 1. FIG. 1C is a view showing the lateral aberration of the projection optical system 10 of Example 1. FIGS. 1B and 1C reveal that the longitudinal aberration and lateral aberration are corrected by the off-axis image height. The projection optical system 10 of Example 1 is an equal-magnification system which is symmetrical with respect to the second concave mirror M3 placed on the pupil plane, so no distortion is basically generated. Also, asymmetrical aberrations such as coma and magnification chromatic aberration are not generated. In addition, since the mirror system has the main optical power of the whole projection optical system 10, chromatic aberrations generated by the lenses L1, L2, and L3 are also substantially small.

(35) Table 1 below shows practical numerical value examples of the projection optical system 10 of Example 1. R is the curvature radius, D is the surface distance, and N is the glass material. A blank of R means a flat surface (the curvature radius is infinite), and a blank of N means that the refractive index is 1. Note that the NA is 0.12 on the object plane side, the correction wavelengths are i-line (365 nm), h-line (405 nm), and g-line (436 nm), and the used image height is 490 to 530 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 1 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces, and their coefficients are shown in the lower half of Table 1.

(36) TABLE-US-00001 TABLE 1 Surface number R D N Object 1 18.75 2 11.72 SiO2 3 74.59 4 Aspherical 10463.57 59.73 SiO2 5 816.66 6 1229.02 579.45 7 1871.68 579.45 Reflecting 8 Aspherical 1229.02 0 Reflecting 9 579.45 10 1871.68 108.23 11 3720.42 40 SiO2 12 Aspherical 3648.34 10.26 13 28.76 14 Aspherical 1706.24 28.76 Reflecting 15 10.26 16 Aspherical 3648.34 40 SiO2 17 3720.42 108.23 18 579.45 19 Aspherical 1229.02 0 Reflecting 20 579.45 21 1871.68 579.45 Reflecting 22 816.66 23 59.73 SiO2 24 Aspherical 10463.57 74.59 25 11.72 SiO2 26 18.75 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 1.0510E+00 1.0860E09 1.2960E14 7.5870E20 3.0020E25 8 1.2200E01 9.0750E12 8.0640E17 3.0480E21 7.3390E26 12 1.0400E+00 2.4020E12 1.1800E16 1.3520E21 2.1820E27 14 3.8300E01 8.6940E12 3.5680E17 7.0450E21 3.6480E25 16 1.0400E+00 2.4020E12 1.1800E16 1.3520E21 2.1820E27 19 1.2200E01 9.0750E12 8.0640E17 3.0480E21 7.3390E26 24 1.0510E+00 1.0860E09 1.2960E14 7.5870E20 3.0020E25 Surface number E12 F14 G16 H18 J20 4 8.0560E31 1.2580E36 5.3720E43 1.3540E48 1.5950E54 8 1.1120E30 1.0680E35 6.2720E41 2.0500E46 2.8490E52 12 1.2790E31 8.0870E38 7.4360E42 1.6870E46 1.7250E51 14 1.0800E29 1.9740E34 2.2080E39 1.3910E44 3.7840E50 16 1.2790E31 8.0870E38 7.4360E42 1.6870E46 1.7250E51 19 1.1120E30 1.0680E35 6.2720E41 2.0500E46 2.8490E52 24 8.0560E31 1.2580E36 5.3720E43 1.3540E48 1.5950E54

(37) An aspherical surface is represented by z=rh.sup.2/(1+(1(1+k)r.sup.2h.sup.2).sup.1/2)+Ah.sup.4+Bh.sup.6+Ch.sup.8+Dh.sup.10+Eh.sup.12+Fh.sup.14+Gh.sup.16.

(38) Comparison of the sizes of optical systems will be explained below. FIG. 13A is a view showing a section of a conventional optical system including two mirrors, and FIG. 13B is a view showing a section of the projection optical system 10 of Example 1. The conventional two-mirror optical system and the projection optical system 10 of Example 1 are designed by the same specifications, and illustrated in the same scale. Under equal conditions in which an object image distance H is 1,060 mm, therefore, a diameter F of the largest concave mirror as a main mirror is 41,964 mm in the prior art, and 41,410 mm (72% of the prior art) in Example 1. Also, the total length L of the optical system is 3,459 mm in the prior art, and 1,744 mm (50% of the prior art) in Example 1. Thus, the height and total length of the projection optical system 10 of Example 1 are sufficiently small.

(39) The projection optical system 10 of Example 1 satisfies the following conditions:

(40) As condition 1, pupil projection amount (Pt/Lt1)=0.11

(41) As condition 2, working distance (W1/R2)=0.80

(42) As condition 3, concentricity ((R2+D)/R1)=0.97

(43) As condition 4, concentricity (R3/R1)=0.91

(44) As condition 5, concentricity (R3/Lt1)=0.98

(45) As condition 6, working distance (W1/Lt1)=0.56

(46) The influences which the pupil projection amount under condition 1 design-wise has on aberrations and the size of the optical system will be explained with reference to FIG. 14. Referring to FIG. 14, when increasing the pupil projection amount Pt, for example, when moving the second concave mirror M3 to a position M3, it is necessary to decrease the inclination angles of a principal ray Rp and a marginal ray Rm with respect to the optical axes. If the curvature of the first convex mirror M2 is decreased, the marginal ray Rm interferes with the effective diameter of the first concave mirror M1, as indicated by H in FIG. 14. Since an object height Y must be increased in order to avoid this interference, the effective diameter of the first concave mirror M1 increases. Thus, the optical system enlarges in both the directions of height and depth when the pupil projection amount Pt increases. Also, the aberrations themselves tend to worsen because they are corrected with the large object height while avoiding the interference.

(47) In the projection optical system 10 of Example 1, therefore, the ratio (Pt/Lt) of the pupil projection amount Pt to the total length L is set at 5% or more and 20% or less. The lower limit is set to allow the projection optical system 10 to sufficiently achieve the degree of freedom of design as a three-mirror optical system. This will be implemented in the following examples, particularly, in Examples 2 and 3.

Example 2

(48) FIG. 2A is a sectional view showing the arrangement of a projection optical system 10 of Example 2. In Example 2, the projection optical system 10 is an equal-magnification system. The layout and image formation relationship of optical elements in the projection optical system 10 of Example 2 are the same as those of Example 1.

(49) Table 2 below shows practical numerical value examples of the projection optical system 10 of Example 2. Note that the NA is 0.12 on the object plane side, the correction wavelength is i-line (365 nm), 320 nm, and the used image height is 20 to 520 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 2 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(50) TABLE-US-00002 TABLE 2 Surface number R D N Object 0 1 23 2 6 SiO2 3 220 4 Aspherical 820.87 29.22 SiO2 5 Aspherical 1335.63 134 6 640 7 1175.42 473.14 8 1668.57 473.14 Reflecting 9 1175.42 473.14 Reflecting 10 1668.57 260 11 Aspherical 2495.35 30 SiO2 12 Aspherical 2490.48 90 13 Aspherical 1878.71 90 Reflecting 14 Aspherical 2490.48 30 SiO2 15 Aspherical 2495.35 260 16 473.14 17 1175.42 473.14 Reflecting 18 1668.57 473.14 Reflecting 19 640 20 134 21 Aspherical 1335.63 29.22 SiO2 22 Aspherical 820.87 220 23 6 SiO2 24 23 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 5.1210E01 4.8730E09 1.7910E14 6.8300E20 2.9110E25 5 3.2210E+00 2.2640E09 1.3770E15 1.6940E20 2.6460E26 11 4.0000E+00 2.7440E10 3.9510E15 4.6580E22 2.1590E25 12 2.5550E+00 1.9420E10 5.5920E15 1.1670E20 1.2040E25 13 2.8130E01 2.4860E11 7.3410E16 7.5900E21 2.9780E25 14 2.5550E+00 1.9420E10 5.5920E15 1.1670E20 1.2040E25 15 4.0000E+00 2.7440E10 3.9510E15 4.6580E22 2.1590E25 21 3.2210E+00 2.2640E09 1.3770E15 1.6940E20 2.6460E26 22 5.1210E01 4.8730E09 1.7910E14 6.8300E20 2.9110E25 Surface number E12 F14 G16 H18 J20 4 8.2960E31 1.1790E36 5.9500E43 1.9040E49 1.1280E55 5 7.8500E32 1.9450E37 6.0680E44 6.5160E49 4.6160E55 11 4.7830E30 2.0090E35 6.0850E40 5.5390E46 4.3970E50 12 5.1290E30 1.8800E35 9.3170E40 2.8390E45 8.0400E50 13 9.8600E30 1.8550E34 2.4320E39 2.0590E44 8.0080E50 14 5.1290E30 1.8800E35 9.3170E40 2.8390E45 8.0400E50 15 4.7830E30 2.0090E35 6.0850E40 5.5390E46 4.3970E50 21 7.8500E32 1.9450E37 6.0680E44 6.5160E49 4.6160E55 22 8.2960E31 1.1790E36 5.9500E43 1.9040E49 1.1280E55

(51) The projection optical system 10 of Example 2 satisfies the following conditions:

(52) As condition 1, pupil projection amount (Pt/Lt1)=0.20

(53) As condition 2, working distance (W1/R2)=0.90

(54) As condition 3, concentricity ((R2+D)/R1)=0.99

(55) As condition 4, concentricity (R3/R1)=1.13

(56) As condition 5, concentricity (R3/Lt1)=0.99

(57) As condition 6, working distance (W1/Lt1)=0.55

(58) FIG. 2B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 2. FIG. 2C is a view showing the lateral aberration of the projection optical system 10 of Example 2. FIGS. 2B and 2C demonstrate that the longitudinal aberration and lateral aberration are well corrected. The distortion is parallel to the axis of ordinate within the range of the off-axis used image height, and this shows that a constant magnification is generated in an exposure slit. Since the projection optical system 10 of Example 2 is an equal-magnification system having a symmetrical layout, the distortion should be zero. Strictly speaking, however, telecentric is generated on an order of about 0.001 rad. When an optimum image plane position where the aberrations are minimized moves by a slight amount in the optical-axis direction, an image formation point is shifted by the product of the two, and the magnification changes. As a consequence, the distortion shifts from the axis of ordinate. This phenomenon can easily be eliminated by optimization, so the slight magnification shift is not a problem. What is important is that the magnification is constant in the exposure slit. Therefore, even if multiple exposure is performed on a mask pattern in the exposure slit when scanning a mask and substrate, a transfer image to the substrate does not shift, so a high-contrast image can be formed.

Example 3

(59) FIG. 3A is a sectional view showing the arrangement of a projection optical system 10 of Example 3. In Example 3, the projection optical system 10 is an equal-magnification system. The layout and image formation relationship of optical elements in the projection optical system 10 of Example 3 are the same as those of Example 1.

(60) Table 3 below shows practical numerical value examples of the projection optical system 10 of Example 3. Note that the NA is 0.12 on the object plane side, the correction wavelength is i-line (365 nm), 320 nm, and the used image height is 480 to 520 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 3 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(61) TABLE-US-00003 TABLE 3 Surface number R D N Object 0 1 25 2 6 SiO2 3 220 4 Aspherical 832.37 46.65 SiO2 5 Aspherical 1332 134 6 640 7 1195.13 579.43 8 1810.07 579.43 Reflecting 9 1195.13 579.43 Reflecting 10 1810.07 30 11 Aspherical 1925.69 35.67 SiO2 12 Aspherical 1928.46 20 13 Aspherical 1689 20 Reflecting 14 Aspherical 1928.46 35.67 SiO2 15 Aspherical 1925.69 30 16 579.43 17 1195.13 579.43 Reflecting 18 1810.07 579.43 Reflecting 19 640 20 134 21 Aspherical 1332 46.65 SiO2 22 Aspherical 832.37 220 23 6 SiO2 24 25 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 5.4470E01 4.8280E09 1.6900E14 6.9290E20 2.9210E25 5 2.9050E+00 2.4730E09 1.2060E15 1.6580E20 2.7150E26 11 4.7310E01 3.9170E11 5.0760E16 5.0060E21 1.8330E25 12 1.0650E+00 8.8510E12 4.4940E16 6.1330E21 2.1910E25 13 3.8330E01 1.0320E11 4.5670E17 5.7730E21 3.0310E25 14 1.0650E+00 8.8510E12 4.4940E16 6.1330E21 2.1910E25 15 4.7310E01 3.9170E11 5.0760E16 5.0060E21 1.8330E25 21 2.9050E+00 2.4730E09 1.2060E15 1.6580E20 2.7150E26 22 5.4470E01 4.8280E09 1.6900E14 6.9290E20 2.9210E25 Surface number E12 F14 G16 H18 J20 4 8.2360E31 1.1950E36 5.8080E43 2.2010E49 1.0410E55 5 7.7910E32 2.0380E37 1.0240E43 5.9400E49 2.9300E55 11 2.7380E30 6.2880E36 3.2960E40 3.3670E45 6.8240E51 12 2.4730E30 1.5760E35 5.3090E40 2.0290E45 1.2230E50 13 9.4210E30 1.8990E34 2.4820E39 1.9210E44 6.6390E50 14 2.4730E30 1.5760E35 5.3090E40 2.0290E45 1.2230E50 15 2.7380E30 6.2880E36 3.2960E40 3.3670E45 6.8240E51 21 7.7910E32 2.0380E37 1.0240E43 5.9400E49 2.9300E55 22 8.2360E31 1.1950E36 5.8080E43 2.2010E49 1.0410E55

(62) The projection optical system 10 of Example 3 satisfies the following conditions:

(63) As condition 1, pupil projection amount (Pt/Lt1)=0.05

(64) As condition 2, working distance (W1/R2)=0.90

(65) As condition 3, concentricity ((R2+D)/R1)=0.98

(66) As condition 4, concentricity (R3/R1)=0.93

(67) As condition 5, concentricity (R3/Lt1)=0.97

(68) As condition 6, working distance (W1/Lt1)=0.62

(69) FIG. 3B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 3. FIG. 3C is a view showing the lateral aberration of the projection optical system 10 of Example 3.

Example 4

(70) FIG. 4A is a sectional view showing the arrangement of a projection optical system 10 of Example 4. In Example 4, the projection optical system 10 is an equal-magnification system. The layout and image formation relationship of optical elements in the projection optical system 10 of Example 4 are the same as those of Example 1.

(71) Table 4 below shows practical numerical value examples of the projection optical system 10 of Example 4. Note that the NA is 0.12 on the object plane side, the correction wavelength is i-line (365 nm), 320 nm, and the used image height is 480 to 520 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 4 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(72) TABLE-US-00004 TABLE 4 Surface number R D N Object 0 1 100.12 2 Aspherical 5213.78 74.91 SiO2 3 727.09 4 1180.07 592.51 5 Aspherical 1842.72 592.51 Reflecting 6 Aspherical 1180.07 592.51 Reflecting 7 1842.72 59.19 8 2949.6 30 SiO2 9 2894.7 30.96 10 Aspherical 1582.26 30.96 Reflecting 11 2894.7 30 SiO2 12 2949.6 59.19 13 592.51 14 Aspherical 1180.07 592.51 Reflecting 15 Aspherical 1842.72 592.51 Reflecting 16 727.09 17 74.91 SiO2 18 Aspherical 5213.78 100.12 Image Aspherical surface data Surface number K A04 B06 C08 D10 2 2.6980E+00 1.7300E09 1.5360E14 9.1290E20 3.9150E25 5 3.8090E03 4.0110E13 6.7150E19 3.0660E26 5.6830E32 6 4.3570E02 3.7170E12 8.3110E17 3.4030E21 9.7850E26 10 3.0960E01 1.1840E11 1.2000E16 1.0790E20 5.2760E25 14 4.3570E02 3.7170E12 8.3110E17 3.4030E21 9.7850E26 15 3.8090E03 4.0110E13 6.7150E19 3.0660E26 5.6830E32 18 2.6980E+00 1.7300E09 1.5360E14 9.1290E20 3.9150E25 Surface number E12 F14 G16 H18 J20 2 1.1190E30 1.8070E36 8.3810E43 1.6740E48 1.9230E54 5 5.4020E37 2.3680E42 1.5460E48 9.1220E54 1.0480E59 6 1.7150E30 1.8910E35 1.2730E40 4.7560E46 7.5240E52 10 1.5750E29 2.9300E34 3.3230E39 2.1040E44 5.7100E50 14 1.7150E30 1.8910E35 1.2730E40 4.7560E46 7.5240E52 15 5.4020E37 2.3680E42 1.5460E48 9.1220E54 1.0480E59

(73) The projection optical system 10 of Example 4 satisfies the following conditions:

(74) As condition 1, pupil projection amount (Pt/Lt1)=0.14

(75) As condition 2, working distance (W1/R2)=0.84

(76) As condition 3, concentricity ((R2+D)/R1)=0.87

(77) As condition 4, concentricity (R3/R1)=0.80

(78) As condition 5, concentricity (R3/Lt1)=0.89

(79) As condition 6, working distance (W1/Lt1)=0.57

(80) FIG. 4B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 4. FIG. 4C is a view showing the lateral aberration of the projection optical system 10 of Example 4.

(81) In Example 4, condition 3 is 0.87, and condition 4 is 0.80. However, these values are 1.0 if the concentricity is perfect. From the viewpoint of defining allowable values of deviation from the concentricity, equivalent allowable ranges exist even for 1.0 or more. For example, 1/0.87=1.15 is set as an upper limit for condition 3, and 1/0.80=1.25 is set as an upper limit for condition 4.

Example 5

(82) FIG. 5A is a sectional view showing the arrangement of a projection optical system 10 of Example 5. In Example 5, the projection optical system 10 is an equal-magnification system. The layout and image formation relationship of optical elements in the projection optical system 10 of Example 5 are the same as those of Example 1.

(83) Table 5 below shows practical numerical value examples of the projection optical system 10 of Example 5. Note that the NA is 0.08 on the object plane side, the correction wavelength is i-line (365 nm), 320 nm, and the used image height is 480 to 520 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 5 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(84) TABLE-US-00005 TABLE 5 Surface number R D N Object 0 1 23 2 6 SiO2 3 220 4 Aspherical 846.36 43.23 SiO2 5 Aspherical 1314.35 134 6 640 7 1267.88 530.4 8 Aspherical 2067.32 530.4 Reflecting 9 Aspherical 1267.88 530.4 Reflecting 10 2067.32 104.38 11 Aspherical 1027.49 46.33 SiO2 12 Aspherical 1067.49 47.85 13 64.64 14 Aspherical 1648.77 64.64 Reflecting 15 47.85 16 Aspherical 1067.49 46.33 SiO2 17 Aspherical 1027.49 104.38 18 530.4 19 Aspherical 1267.88 530.4 Reflecting 20 Aspherical 2067.32 530.4 Reflecting 21 640 22 134 23 Aspherical 1314.35 43.23 SiO2 24 Aspherical 846.36 220 25 6 SiO2 26 23 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 6.9750E01 4.9420E09 1.7410E14 6.8640E20 2.9260E25 5 3.0400E+00 2.3420E09 1.6620E15 1.6510E20 2.6880E26 8 1.1910E+00 3.8790E11 3.8430E21 1.2080E23 2.8790E29 9 3.6720E+00 3.6420E10 8.8140E16 5.5570E21 9.3910E27 11 4.0000E+00 1.7110E09 1.3850E14 2.8380E20 1.4300E24 12 4.0000E+00 1.4500E09 1.1330E14 3.3630E22 1.0650E24 14 1.0540E+00 4.9320E11 2.6280E16 3.9220E21 5.3160E26 16 4.0000E+00 1.4500E09 1.1330E14 3.3630E22 1.0650E24 17 4.0000E+00 1.7110E09 1.3850E14 2.8380E20 1.4300E24 19 3.6720E+00 3.6420E10 8.8140E16 5.5570E21 9.3910E27 20 1.1910E+00 3.8790E11 3.8430E21 1.2080E23 2.8790E29 23 3.0400E+00 2.3420E09 1.6620E15 1.6510E20 2.6880E26 24 6.9750E01 4.9420E09 1.7410E14 6.8640E20 2.9260E25 Surface number E12 F14 G16 H18 J20 4 8.2490E31 1.1960E36 5.8740E43 2.1330E49 5.2590E56 5 7.9670E32 2.0470E37 1.1070E43 4.8480E49 1.5680E55 8 7.0510E35 1.0870E41 8.3410E47 1.0780E52 3.3780E58 9 4.8590E31 4.8830E37 2.0020E40 2.7300E45 1.0400E50 11 1.5750E29 1.3560E33 3.2810E38 1.1110E42 2.2530E47 12 2.5350E29 2.1120E35 9.0470E40 1.2730E42 2.0370E47 14 5.5150E30 2.3210E35 1.2180E38 3.0500E43 2.4270E48 16 2.5350E29 2.1120E35 9.0470E40 1.2730E42 2.0370E47 17 1.5750E29 1.3560E33 3.2810E38 1.1110E42 2.2530E47 19 4.8590E31 4.8830E37 2.0020E40 2.7300E45 1.0400E50 20 7.0510E35 1.0870E41 8.3410E47 1.0780E52 3.3780E58 23 7.9670E32 2.0470E37 1.1070E43 4.8480E49 1.5680E55 24 8.2490E31 1.1960E36 5.8740E43 2.1330E49 5.2590E56

(85) The projection optical system 10 of Example 5 satisfies the following conditions:

(86) As condition 1, pupil projection amount (Pt/Lt1)=0.07

(87) As condition 2, working distance (W1/R2)=0.76

(88) As condition 3, concentricity ((R2+D)/R1)=0.96

(89) As condition 4, concentricity (R3/R1)=0.86

(90) As condition 5, concentricity (R3/Lt1)=0.98

(91) As condition 6, working distance (W1/Lt1)=0.56

(92) FIG. 5B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 5. FIG. 5C is a view showing the lateral aberration of the projection optical system 10 of Example 5.

Example 6

(93) FIG. 6A is a sectional view showing the arrangement of a projection optical system 10 of Example 6. In Example 6, the projection optical system 10 is an equal-magnification system. The layout and image formation relationship of optical elements in the projection optical system 10 of Example 6 are the same as those of Example 1.

(94) Table 6 below shows practical numerical value examples of the projection optical system 10 of Example 6. Note that the NA is 0.12 on the object plane side, the correction wavelength is i-line (365 nm), 320 nm, and the used image height is 480 to 520 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 6 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(95) TABLE-US-00006 TABLE 6 Surface number R D N Object 0 0 1 0 216.27 2 Aspherical 2012.25 95 SiO2 3 0 600.12 4 1025.59 360.97 5 Aspherical 1495.57 360.97 Reflecting 6 Aspherical 1025.59 360.97 Reflecting 7 1495.57 50 8 4412.97 30 SiO2 9 4586.58 21 10 Aspherical 1236.02 21 Reflecting 11 4586.58 30 SiO2 12 4412.97 50 13 0 360.97 14 Aspherical 1025.59 360.97 Reflecting 15 Aspherical 1495.57 360.97 Reflecting 16 0 600.12 17 0 95 SiO2 18 Aspherical 2012.25 216.27 Image Aspherical surface data Surface number K A04 B06 C08 D10 2 2.6980E+00 1.1640E09 1.4360E14 9.1670E20 3.9330E25 5 2.4740E01 8.6820E12 5.9800E18 1.6730E23 1.6060E29 6 7.3730E02 8.0690E12 1.0890E16 1.0640E21 7.8670E26 10 1.3500E01 1.8960E11 4.2930E17 7.5310E21 4.1440E25 14 7.3730E02 8.0690E12 1.0890E16 1.0640E21 7.8670E26 15 2.4740E01 8.6820E12 5.9800E18 1.6730E23 1.6060E29 18 2.6980E+00 1.1640E09 1.4360E14 9.1670E20 3.9330E25 Surface number E12 F14 G16 H18 J20 2 1.1140E30 1.8170E36 8.8120E43 1.8190E48 2.2620E54 5 1.3460E34 8.6920E41 3.5640E46 1.4400E51 3.9900E57 6 1.6610E30 1.9550E35 1.2930E40 3.9610E46 1.6260E52 10 1.3170E29 2.6860E34 4.3930E39 6.1180E44 4.4640E49 14 1.6610E30 1.9550E35 1.2930E40 3.9610E46 1.6260E52 15 1.3460E34 8.6920E41 3.5640E46 1.4400E51 3.9900E57 18 1.1140E30 1.8170E36 8.8120E43 1.8190E48 2.2620E54

(96) The projection optical system 10 of Example 6 satisfies the following conditions:

(97) As condition 1, pupil projection amount (Pt/Lt1)=0.07

(98) As condition 2, working distance (W1/R2)=0.89

(99) As condition 3, concentricity ((R2+D)/R1)=0.93

(100) As condition 4, concentricity (R3/R1)=0.83

(101) As condition 5, concentricity (R3/Lt1)=0.90

(102) As condition 6, working distance (W1/Lt1)=0.66

(103) FIG. 6B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 6. FIG. 6C is a view showing the lateral aberration of the projection optical system 10 of Example 6.

Example 7

(104) FIG. 7A is a sectional view showing the arrangement of a projection optical system 10 of Example 7. In Example 7, the projection optical system 10 is an equal-magnification system. The layout and image formation relationship of optical elements in the projection optical system 10 of Example 7 are the same as those of Example 1.

(105) Table 7 below shows practical numerical value examples of the projection optical system 10 of Example 7. Note that the NA is 0.13 on the object plane side, the correction wavelengths are i-line (365 nm), h-line (405 nm), and g-line (436 nm), and the used image height is 500 to 530 mm. Accordingly, the exposure slit width is 30 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 7 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(106) TABLE-US-00007 TABLE 7 Surface number R D N Object 0 1 18.21 2 11.38 SiO2 3 74.78 4 Aspherical 8713.03 70 SiO2 5 726.38 6 1178.26 591.59 7 1845.9 591.59 Reflecting 8 Aspherical 1178.26 0 9 591.59 10 1845.9 50 11 2722.84 20.38 SiO2 12 2673 30.05 13 Aspherical 1556.35 30.05 Reflecting 14 2673 20.38 SiO2 15 2722.84 50 16 591.59 17 Aspherical 1178.26 0 18 591.59 19 1845.9 591.59 Reflecting 20 726.38 21 Aspherical 8713.03 70 SiO2 22 74.78 23 11.38 SiO2 24 18.21 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 2.6980E+00 1.7010E09 1.5430E14 9.1050E20 3.9170E25 8 2.8980E02 6.0400E12 4.8000E17 3.1090E21 9.6560E26 13 2.9690E01 1.2230E11 1.0250E16 9.9840E21 5.1480E25 17 2.8980E02 6.0400E12 4.8000E17 3.1090E21 9.6560E26 21 2.6980E+00 1.7010E09 1.5430E14 9.1050E20 3.9170E25 Surface number E12 F14 G16 H18 J20 4 1.1200E30 1.8010E36 8.5450E43 1.7110E48 2.1270E54 8 1.7310E30 1.8970E35 1.2580E40 4.6510E46 7.3810E52 13 1.5780E29 2.9540E34 3.3140E39 2.0500E44 5.3740E50 17 1.7310E30 1.8970E35 1.2580E40 4.6510E46 7.3810E52 21 1.1200E30 1.8010E36 8.5450E43 1.7110E48 2.1270E54

(107) The projection optical system 10 of Example 7 satisfies the following conditions:

(108) As condition 1, pupil projection amount (Pt/Lt1)=0.06

(109) As condition 2, working distance (W1/R2)=0.76

(110) As condition 3, concentricity ((R2+D)/R1)=0.96

(111) As condition 4, concentricity (R3/R1)=0.84

(112) As condition 5, concentricity (R3/Lt1)=0.98

(113) As condition 6, working distance (W1/Lt1)=0.57

(114) FIG. 7B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 7. FIG. 7C is a view showing the lateral aberration of the projection optical system 10 of Example 7.

Example 8

(115) FIG. 8A is a sectional view showing the arrangement of a projection optical system 10 according to Example 8. In Example 8, the projection optical system 10 is an enlarging system having a magnification of 1.25. The projection optical system 10 includes a first concave mirror M1 having positive power, a first convex mirror M2 having negative power, a second concave mirror M3 having positive power, and a third concave mirror M5 having positive power.

(116) A lens L1 is placed near an object plane O, and a lens L3 is placed near an image plane I. A lens L2 is placed near the second concave mirror M3. Light from the object plane O forms an image on the image plane I through the lens L1, first concave mirror M1, first convex mirror M2, lens L2, second concave mirror M3, lens L2, first convex mirror M2, third concave mirror M5, and lens L3 in this order. The second concave mirror M3 is placed on the pupil plane of the projection optical system 10.

(117) The only difference of the projection optical system 10 of Example 8 from an equal-magnification system is that the light reflected for the second time by the first convex mirror M2 propagates in the order of the third concave mirror M5 and lens L3. The rest of the arrangement is the same as that of the equal-magnification systems explained in Examples 1 to 7.

(118) Table 8 below shows practical numerical value examples of the projection optical system 10 of Example 8. Note that the NA is 0.08 on the image plane side, the correction wavelengths are i-line (365 nm) and h-line (405 nm), and the used image height is 625 to 675 mm. Accordingly, the exposure slit width is 50 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 8 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(119) TABLE-US-00008 TABLE 8 Surface number R D N Object 0 1 49.23 2 12 SiO2 3 10 4 Aspherical 11407.08 26 SiO2 5 713.36 6 1319.74 580.82 7 Aspherical 1886.04 580.82 Reflecting 8 Aspherical 1319.74 0 Reflecting 9 580.82 10 1886.04 104.25 11 10607.1 30.95 SiO2 12 Aspherical 9732.89 18.26 13 36.73 14 Aspherical 1695.22 36.73 Reflecting 15 18.26 16 Aspherical 9732.89 30.95 SiO2 17 10607.1 104.25 18 580.82 19 Aspherical 1319.74 0 Reflecting 20 818.71 21 Aspherical 2355.19 818.71 Reflecting 22 988.61 23 33 SiO2 24 Aspherical 10974.44 37 25 12 SiO2 26 50 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 4.0000E+00 1.5410E09 1.4440E14 7.5760E20 2.9280E25 7 8.5550E02 1.8560E12 3.5470E18 2.4110E24 1.9760E31 8 1.0270E01 4.5390E11 3.6100E17 2.1430E21 7.2450E26 12 4.0000E+00 4.3080E11 1.5070E15 1.1900E20 4.6130E26 14 1.3500E01 2.2460E11 5.4680E16 1.7630E21 1.0860E25 16 4.0000E+00 4.3080E11 1.5070E15 1.1900E20 4.6130E26 19 1.0270E01 4.5390E11 3.6100E17 2.1430E21 7.2450E26 21 3.4490E02 3.3700E13 8.8170E19 2.9180E25 3.7570E32 24 4.0000E+00 6.4350E10 1.2680E14 7.7910E20 2.9610E25 Surface number E12 F14 G16 H18 J20 4 8.2480E31 1.2660E36 3.3490E43 6.4650E49 6.6930E55 7 4.2490E36 1.7180E42 2.4770E47 6.1340E53 3.7940E59 8 1.0440E30 9.4510E36 6.9920E41 3.7520E46 9.2880E52 12 1.2500E30 5.8520E35 9.9850E40 4.4960E44 3.7550E49 14 1.2350E29 3.0640E34 1.2650E39 6.1100E44 6.9940E49 16 1.2500E30 5.8520E35 9.9850E40 4.4960E44 3.7550E49 19 1.0440E30 9.4510E36 6.9920E41 3.7520E46 9.2880E52 21 7.8300E38 6.8540E43 7.6250E49 2.0630E54 1.9900E60 24 8.0780E31 1.2760E36 4.7630E43 1.2620E48 1.2050E54

(120) The projection optical system 10 of Example 8 satisfies the following conditions:

(121) As condition 1, pupil projection amount (Pt/Lt1)=0.03

(122) As condition 2, working distance (W1/R2)=0.85

(123) As condition 3, concentricity ((R2+D)/R1)=0.91

(124) As condition 4, concentricity (R3/R1)=0.72

(125) As condition 5, concentricity (R3/Lt1)=0.90

(126) As condition 6, working distance (W1/Lt1)=0.59

(127) As condition 7, ratio ((R5/R1)/B)=1.00

(128) FIG. 8B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 8.

Example 9

(129) FIG. 9A is a sectional view showing the arrangement of a projection optical system 10 according to Example 9. In Example 9, the projection optical system 10 is an enlarging system having a magnification of 1.38. The layout and image formation relationship of optical elements of the projection optical system 10 of Example 9 are the same as those of Example 8.

(130) Table 9 below shows practical numerical value examples of the projection optical system 10 of Example 9. Note that the NA is 0.08 on the image plane side, the correction wavelengths are i-line (365 nm), h-line (405 nm), and g-line (436 nm), and the used image height is 690 to 745 mm. Accordingly, the exposure slit width is 55 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 9 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(131) TABLE-US-00009 TABLE 9 Surface number R D N Object 0 1 71.34 2 6 SiO2 3 10 4 Aspherical 11967.88 65 SiO2 5 Aspherical 3198.85 0 6 775.73 7 1380.84 552.9 8 Aspherical 1903.85 552.9 Reflecting 9 Aspherical 1380.84 0 Reflecting 10 552.9 11 1903.85 82.99 12 4552.16 56.18 SiO2 13 Aspherical 4430.09 21.67 14 41.42 15 Aspherical 1711.97 41.42 Reflecting 16 21.67 17 Aspherical 4430.09 56.18 SiO2 18 4552.16 82.99 19 552.9 20 Aspherical 1380.84 0 Reflecting 21 913.79 22 Aspherical 2632.22 913.79 Reflecting 23 977.95 24 25 SiO2 25 Aspherical 3089.51 50 26 6 SiO2 27 35 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 3.2340E+00 1.3070E09 1.3370E14 7.6120E20 2.8960E25 5 4.0000E+00 7.8520E11 2.4890E15 1.1050E22 1.1480E26 8 1.9860E01 8.0820E12 5.0680E18 1.8410E23 2.4110E29 9 5.1480E01 6.4830E11 5.4370E16 5.5230E21 6.4800E26 13 4.0000E+00 3.7400E11 1.2630E15 5.6650E21 3.8000E25 15 2.9600E01 9.6600E12 8.3710E16 1.1910E20 1.1030E25 17 4.0000E+00 3.7400E11 1.2630E15 5.6650E21 3.8000E25 20 5.1480E01 6.4830E11 5.4370E16 5.5230E21 6.4800E26 22 1.4520E01 2.6980E12 1.7260E18 2.3040E24 2.9110E30 25 4.0000E+00 7.2180E10 1.6540E14 7.8660E20 2.8300E25 Surface number E12 F14 G16 H18 J20 4 8.1610E31 1.3350E36 2.3380E43 7.0880E49 2.7200E54 5 2.9390E32 0.0000E+00 2.8580E43 0.0000E+00 0.0000E+00 8 7.2340E35 1.4580E40 3.8970E46 1.4980E52 5.4670E58 9 8.8180E31 1.0080E35 7.6580E41 3.7520E46 9.2880E52 13 2.0100E30 8.8570E35 1.2040E39 4.3550E44 3.0110E49 15 1.3850E29 3.1700E34 5.8670E40 5.8880E44 5.2640E49 17 2.0100E30 8.8570E35 1.2040E39 4.3550E44 3.0110E49 20 8.8180E31 1.0080E35 7.6580E41 3.7520E46 9.2880E52 22 2.8120E36 6.0900E42 6.9170E48 1.1500E54 2.4050E60 25 8.2210E31 1.2820E36 4.2160E43 1.0650E48 8.7450E55

(132) The projection optical system 10 of Example 9 satisfies the following conditions:

(133) As condition 1, pupil projection amount (Pt/Lt1)=0.12, pupil projection amount (Pt/Lt2)=0.09

(134) As condition 2, working distance (W1/R2)=0.67, working distance (W2/R2)=0.79

(135) As condition 3, concentricity ((R2+D)/R1)=1.02, concentricity ((R2+D)/R5)=0.87

(136) As condition 4, concentricity (R3/R1)=0.90, concentricity (R3/R5)=0.65

(137) As condition 5, concentricity (R3/Lt1)=1.02, concentricity (R3/Lt2)=0.93

(138) As condition 6, working distance (W1/Lt1)=0.55, working distance (W1/Lt2)=0.59

(139) As condition 7, ratio ((R5/R1)/B)=1.00

(140) FIG. 9B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 9.

Example 10

(141) FIG. 10A is a sectional view showing the arrangement of a projection optical system 10 according to Example 10. In Example 10, the projection optical system 10 is a reducing system having a magnification of 0.75. The layout and image formation relationship of optical elements of the projection optical system 10 of Example 10 are the same as those of Example 9.

(142) Table 10 below shows practical numerical value examples of the projection optical system 10 of Example 10. Note that the NA is 0.107 on the image plane side, the correction wavelengths are i-line (365 nm) and h-line (405 nm), and the used image height is 500 to 540 mm. Accordingly, the exposure slit width is 40 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 10 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(143) TABLE-US-00010 TABLE 10 Surface number R D N Object 0 1 60 2 6 SiO2 3 50 4 Aspherical 5939.49 25 SiO2 5 1019.95 6 798.19 7 Aspherical 2488.24 798.19 Reflecting 8 Aspherical 1381.76 0 Reflecting 9 560.03 10 86.5 11 5570.45 39.2 SiO2 12 Aspherical 5375.23 23.01 13 42.79 14 Aspherical 1714.43 42.79 Reflecting 15 23.01 16 Aspherical 5375.23 39.2 SiO2 17 5570.45 86.5 18 1921.36 560.03 19 Aspherical 1381.76 0 Reflecting 20 560.03 21 Aspherical 1921.36 560.03 Reflecting 22 1381.76 776.76 23 57.73 SiO2 24 Aspherical 3194.53 10 25 6 SiO2 26 75 Image Aspherical surface data Surface number K A04 B06 C08 D10 4 4.0000E+00 3.3390E10 1.4150E14 7.8220E20 2.8800E25 7 2.2980E03 8.8210E13 3.0540E18 3.0540E24 5.2630E31 8 2.9020E01 5.3870E11 4.0670E16 3.6810E21 5.9140E26 12 1.7510E+00 9.5200E11 3.1310E15 3.3260E20 1.7760E25 14 6.1670E01 3.5610E11 6.8570E16 1.0860E20 9.2910E26 16 1.7510E+00 9.5200E11 3.1310E15 3.3260E20 1.7760E25 19 2.9020E01 5.3870E11 4.0670E16 3.6810E21 5.9140E26 21 8.1300E02 6.9940E13 9.4420E18 1.2790E23 3.5690E30 24 6.5180E01 6.0450E10 1.2190E14 7.5850E20 2.9680E25 Surface number E12 F14 G16 H18 J20 4 8.1590E31 1.2800E36 4.4540E43 1.0990E48 9.4300E55 7 5.3110E36 6.7490E42 9.9230E48 5.6740E54 8.4330E60 8 8.5180E31 8.5440E36 6.9320E41 3.7520E46 9.2880E52 12 2.6290E30 1.0600E34 1.5100E39 5.7260E44 4.1660E49 14 1.4380E29 3.4630E34 5.0550E40 6.7550E44 5.9570E49 16 2.6290E30 1.0600E34 1.5100E39 5.7260E44 4.1660E49 19 8.5180E31 8.5440E36 6.9320E41 3.7520E46 9.2880E52 21 6.7920E35 4.5200E41 3.8660E46 3.5290E52 3.7940E59 24 8.1100E31 1.2800E36 4.4850E43 1.0670E48 4.4500E55

(144) The projection optical system 10 of Example 10 satisfies the following conditions:

(145) As condition 1, pupil projection amount (Pt/Lt1)=0.02, pupil projection amount (Pt/Lt2)=0.11

(146) As condition 2, working distance (W1/R2)=0.84, working distance (W2/R2)=0.67

(147) As condition 3, concentricity ((R2+D)/R1)=0.88, concentricity ((R2+D)/R5)=1.01

(148) As condition 4, concentricity (R3/R1)=0.69, concentricity (R3/R5)=0.89

(149) As condition 5, concentricity (R3/Lt1)=0.90, concentricity (R3/Lt2)=1.02

(150) As condition 6, working distance (W1/Lt1)=0.61, working distance (W1/Lt2)=0.55

(151) As condition 7, ratio ((R5/R1)/B)=1.03

(152) FIG. 10B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 10.

Example 11

(153) FIG. 11A is a sectional view showing the arrangement of a projection optical system 10 according to Example 11. In Example 11, the projection optical system 10 is an enlarging system having a magnification of 1.25. The layout and image formation relationship of optical elements of the projection optical system 10 of Example 11 are the same as those of Example 8.

(154) Table 11 below shows practical numerical value examples of the projection optical system 10 of Example 11. Note that the NA is 0.08 on the image plane side, the correction wavelengths are i-line (365 nm) and h-line (405 nm), and the used image height is 625 to 675 mm. Accordingly, the exposure slit width is 50 mm. This used image height ensures a simultaneous exposure width of 750 mm or more. The projection optical system 10 of Example 11 includes a plurality of aspherical mirror surfaces and a plurality of aspherical lens surfaces.

(155) TABLE-US-00011 TABLE 11 Surface number R D N Object 1 0 2 49.48 3 12 SiO2 4 10 5 Aspherical 16833.11 62.36 SiO2 6 368.64 7 1230.07 582.4 8 Aspherical 1712.56 582.4 Reflecting 9 Aspherical 1230.07 582.4 Reflecting 10 1712.56 94.54 11 3296.43 25 SiO2 12 Aspherical 3217.51 33.01 13 51.48 14 Aspherical 1735.02 51.48 Reflecting 15 33.01 16 Aspherical 3217.51 25 SiO2 17 3296.43 94.54 18 582.4 19 Aspherical 1230.07 1041.04 Reflecting 20 Aspherical 2456.88 1041.04 Reflecting 21 1480.62 22 25 SiO2 23 Aspherical 39858.98 37 24 12 SiO2 25 50 Image Aspherical surface data Surface number K A04 B06 C08 D10 5 2.3570E01 3.2960E09 2.4370E14 7.3460E20 2.4980E25 8 8.2130E02 2.6860E13 9.3550E18 3.0540E24 9.2580E30 9 2.8760E01 2.0460E11 3.1380E16 2.2840E21 1.0000E25 12 2.1570E+00 1.8130E10 4.8920E15 2.6050E20 6.6920E25 14 9.0470E01 4.2860E11 1.7630E15 1.5070E20 2.8940E25 16 2.1570E+00 1.8130E10 4.8920E15 2.6050E20 6.6920E25 19 2.8760E01 2.0460E11 3.1380E16 2.2840E21 1.0000E25 20 2.2670E02 7.5060E13 5.4710E19 1.3740E25 4.9740E31 23 4.0000E+00 1.8220E09 1.6730E14 7.6450E20 2.8920E25 Surface number E12 F14 G16 H18 J20 5 9.3210E31 1.2930E36 5.0470E43 1.3520E48 6.7810E54 8 4.6410E36 2.7880E41 4.8970E47 6.5210E53 3.7940E59 9 9.0230E31 5.4870E36 5.3980E41 3.7520E46 9.2880E52 12 1.0280E29 3.2360E34 1.6080E39 2.1340E43 2.7180E48 14 1.0490E29 2.5350E34 1.9300E39 2.8880E44 4.7150E49 16 1.0280E29 3.2360E34 1.6080E39 2.1340E43 2.7180E48 19 9.0230E31 5.4870E36 5.3980E41 3.7520E46 9.2880E52 20 4.3850E37 1.0360E42 3.5760E49 1.0490E54 3.7890E61 23 8.2350E31 1.2710E36 4.3120E43 1.1460E48 1.0170E54

(156) The projection optical system 10 of Example 11 satisfies the following conditions:

(157) As condition 1, pupil projection amount (Pt/Lt1)=0.16, pupil projection amount (Pt/Lt2)=0.11

(158) As condition 2, working distance (W1/R2)=0.41, working distance (W2/R2)=1.30

(159) As condition 3, concentricity ((R2+D)/R1)=1.06, concentricity ((R2+D)/R5)=0.92

(160) As condition 4, concentricity (R3/R1)=1.01, concentricity (R3/R5)=0.71

(161) As condition 5, concentricity (R3/Lt1)=1.35, concentricity (R3/Lt2)=0.73

(162) As condition 6, working distance (W1/Lt1)=0.39, working distance (W1/Lt2)=0.67

(163) As condition 7, ratio ((R5/R1)/B)=1.15

(164) FIG. 11B is a view showing the longitudinal aberration and distortion of the projection optical system 10 of Example 11.

(165) In Example 11, condition 7 is 1.15. However, there is a principle that the ratio R5/R1 ideally determines the magnification of an enlarging system or reducing system. From this point of view, an equivalent allowable range within which the value of (R5/R1)/B is 1.0 or less exists. Therefore, (R5/R1)/B=1/1.15=0.87 is set as a lower limit.

(166) Tables 12 and 13 collectively show the numerical values and conditions of the projection optical systems 10 of Examples 1 to 11.

(167) TABLE-US-00012 TABLE 12 NA Ymax Ymin SW (@Image Correction (@Image (@Image (@Image plane) wavelength plane) plane) plane) Example 1 Equal- 0.12 ihg-lines 530 490 40 magnification system 1 Example 2 Equal- 0.12 i-lines, 520 480 40 magnification 320 nm system 2 Example 3 Equal- 0.12 i-lines, 520 480 40 magnification 320 nm system 3 Example 4 Equal- 0.12 i-lines, 520 480 40 magnification 320 nm system 4 Example 5 Equal- 0.08 i-lines, 520 480 40 magnification 320 nm system 5 Example 6 Equal- 0.12 i-lines, 520 480 40 magnification 320 nm system 6 Example 7 Equal- 0.13 ihg-lines 530 500 30 magnification system 7 Example 8 Enlarging 0.08 ih-lines 675 625 50 system 1 Example 9 Enlarging 0.08 ih-lines 745 690 55 system 2 Example Reducing 0.107 ih-lines 540 500 40 10 system 1 Example Enlarging 0.08 ih-lines 675 625 50 11 system 3 (Unit: mm)

(168) TABLE-US-00013 TABLE 13 Condition 1 Pupil Condition 2 Condition 6 Condition 7 projection Working Condition 3 Condition 4 Condition 5 Working Ratio amount distance Concentricity Concentricity Concentricity distance ((R5/R1)/ (Pt/L1) (w/R2) ((R2 + D)/R1) (R3/R1) (R3/L1) (W/L1) magnification) Example 1 Equal-magnification 0.11 0.80 0.97 0.91 0.98 0.56 system 1 Example 2 Equal-magnification 0.20 0.90 0.99 1.13 0.99 0.55 system 2 Example 3 Equal-magnification 0.05 0.90 0.98 0.93 0.97 0.62 system 3 Example 4 Equal-magnification 0.14 0.84 0.87 0.80 0.89 0.57 system 4 Example 5 Equal-magnification 0.07 0.76 0.96 0.86 0.98 0.56 system 5 Example 6 Equal-magnification 0.07 0.89 0.93 0.83 0.90 0.66 system 6 Example 7 Equal-magnification 0.06 0.76 0.96 0.84 0.98 0.57 system 7 Example 8 Enlarging Upper 0.12 0.61 1.01 0.90 1.07 0.51 1.00 system 1 optical path 1.25x Lower 0.03 0.85 0.91 0.72 0.90 0.59 optical path Example 9 Enlarging Upper 0.12 0.67 1.02 0.90 1.02 0.55 1.00 system 2 optical path 1.38x Lower 0.09 0.79 0.87 0.65 0.93 0.59 optical path Example Reducing Upper 0.02 0.84 0.88 0.69 0.90 0.61 1.03 10 system 1 optical path 0.75x Lower 0.11 0.67 1.01 0.89 1.02 0.55 optical path Example Enlarging Upper 0.16 0.41 1.06 1.01 1.35 0.39 1.15 11 system 3 optical path 1.25x Lower 0.11 1.30 0.92 0.71 0.73 0.67 optical path Example Equal-magnification 0.11 0.80 0.97 0.91 0.98 0.56 12 system 1 (actual layout drawing)

(169) The projection optical system according to this embodiment (the projection optical system 10 of each example) is applicable as, for example, a projection optical system for projecting an image of a mask pattern onto a substrate, to an exposure apparatus for exposing the substrate. FIG. 15 is a view showing the arrangement of an exposure apparatus 100 including the projection optical system 10.

(170) A mask M is an original on which a pattern is formed. A substrate P is a plate coated with a photosensitive resist. The mask M and substrate P are held on movable stages and synchronously scanned in the direction of arrows. Consequently, the pattern of the mask M is transferred onto the substrate P. FIG. 15 does not show an illumination optical system for illuminating the mask M with light from a light source, and other units. The design example of Example 1 is applied to the projection optical system 10.

(171) A trapezoidal bending mirror DM is positioned between the mask M and the substrate P. The bending mirror DM forms the first and second bending mirrors described earlier. Light from the mask M is reflected from above from the vertical direction to the horizontal direction by the upper reflecting surface of the bending mirror DM, and reflected downward from the horizontal direction to the vertical direction by the lower reflecting surface of the bending mirror DM. Since condition 2 or 6 of the working distance is satisfied as described above, the bending mirror DM can be installed while the optical system is downsized.

(172) A method of manufacturing an article according to an embodiment of the present invention is suitable for manufacturing an article such as a device (for example, a semiconductor device, magnetic storage medium, or liquid crystal display device). This method of manufacturing includes a step of exposing a substrate coated with a photosensitizing agent by using an exposure apparatus 100 and a step of developing the exposed substrate. The method of manufacturing further includes other known steps (oxidation, deposition, vapor deposition, doping, planarization, etching, resist removal, dicing, bonding, packaging, and the like). The method of manufacturing the article according to this embodiment is superior to the conventional method in at least one of the performance of an article, quality, productivity, and production cost.

(173) Note that the NA, image height, slit width, used wavelengths, and the like are not limited to numerical values exemplified in the examples and are changed in accordance with, for example, the necessary accuracy and specifications of the exposure apparatus, and the present invention includes these conditions. Note also that the layout of aspherical surfaces and their deviation amounts from a spherical surface are not limited to the examples. Furthermore, the projection optical systems of the above-described embodiment and examples are also applicable to each multi-lens optical system disclosed in Japanese Patent Laid-Open No. 7-57986.

(174) While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

(175) This application claims the benefit of Japanese Patent application No. 2016-203033 filed on Oct. 14, 2016, which is hereby incorporated by reference herein in its entirety.