POSITION DETECTION DEVICE
20230228595 · 2023-07-20
Inventors
Cpc classification
G03B2205/0007
PHYSICS
G03B5/00
PHYSICS
International classification
Abstract
A position detection device detects a position of a lens holder in an X-axis direction based on a change in an output value of a first magnetic sensor, a position of the lens holder in a Y-axis direction based on a change in an output value of a second magnetic sensor, and a position of the lens holder in a Z-axis direction based on the changes in the output values of the first magnetic sensor and the second magnetic sensor.
Claims
1. A position detection device comprising: a lens holder holding a lens having an optical axis direction and being movable in the optical axis direction and an in-plane direction orthogonal or substantially orthogonal to the optical axis direction; a first magnet attached to the lens holder to generate a first magnetic field; a second magnet attached to the lens holder to generate a second magnetic field; a first magnetic sensor that is fixed to detect the first magnetic field applied from the first magnet moved relatively when the lens holder is moved; and a second magnetic sensor that is fixed to detect the second magnetic field applied from the second magnet moved relatively when the lens holder is moved; wherein a polarizing direction of the first magnet is along a first direction orthogonal or substantially orthogonal to the optical axis direction; a polarizing direction of the second magnet is along a second direction orthogonal or substantially orthogonal to each of the optical axis direction and the first direction; a magnetization sensing surface of the first magnetic sensor extends along each of a third direction and the first direction, the third direction being parallel or substantially parallel to the optical axis direction; a magnetization sensing surface of the second magnetic sensor extends along each of the third direction and the second direction; the position detection device is operable to detect a position of the lens holder in the first direction based on a change in an output value of the first magnetic sensor; the position detection device is operable to detect a position of the lens holder in the second direction based on a change in an output value of the second magnetic sensor; and the position detection device is operable to detect a position of the lens holder in the third direction based on the changes in the output values of the first magnetic sensor and the second magnetic sensor.
2. The position detection device according to claim 1, wherein each of the first magnetic sensor and the second magnetic sensor includes a plurality of magnetoresistance elements defining a bridge circuit.
3. The position detection device according to claim 1, wherein each of the first magnetic sensor and the second magnetic sensor is mounted on a mounting surface orthogonal or substantially orthogonal to the third direction.
4. The position detection device according to claim 1, wherein each of the first magnetic sensor and the second magnetic sensor is mounted on a mounting surface parallel or substantially parallel to the third direction.
5. The position detection device according to claim 1, wherein the lens holder has a cylindrical or substantially cylindrical shape.
6. The position detection device according to claim 1, wherein the lens holder is mounted on a substrate with a driving mechanism interposed therebetween.
7. The position detection device according to claim 6, wherein the driving mechanism is structured to provide an autofocus function.
8. The position detection device according to claim 6, wherein the driving mechanism is structured to provide a cameral shape correction function.
9. The position detection device according to claim 6, wherein the driving mechanism includes a piezoelectric motor or an actuator.
10. The position detection device according to claim 1, wherein each of the first magnetic sensor and the second magnetic sensor includes a first magnetoresistance element, a second magnetoresistance element, a third magnetoresistance element, and a fourth magnetoresistance element.
11. The position detection device according to claim 10, wherein the first magnetoresistance element, the second magnetoresistance element, the third magnetoresistance element, and the fourth magnetoresistance element are electrically connected to define a Wheatstone bridge circuit.
12. The position detection device according to claim 10, wherein the first magnetoresistance element, the second magnetoresistance element, the third magnetoresistance element, and the fourth magnetoresistance element are connected in parallel between a power supply terminal and a ground terminal.
13. The position detection device according to claim 10, wherein each of the first magnetoresistance element, the second magnetoresistance element, the third magnetoresistance element, and the fourth magnetoresistance element is a Tunnel Magneto Resistance element.
14. The position detection device according to claim 10, wherein an outer shape of each of the first magnetoresistance element, the second magnetoresistance element, the third magnetoresistance element, and the fourth magnetoresistance element is quadrangular or substantially quadrangular.
15. The position detection device according to claim 10, wherein each of the first magnetoresistance element, the second magnetoresistance element, the third magnetoresistance element, and the fourth magnetoresistance element includes a plurality of Tunnel Magneto Resistance elements connected to each other in series.
16. The position detection device according to claim 15, wherein each of the plurality of Tunnel Magneto Resistance elements has a layered structure including a lower electrode layer, an anti-ferromagnetic layer, a first reference layer, a non-magnetic intermediate layer, a second reference layer, a tunnel barrier layer, a free layer, and upper electrode layer.
17. The position detection device according to claim 16, wherein the lower electrode layer includes a metal layer or metal compound layer including Ta and Cu.
18. The position detection device according to claim 16, wherein the anti-ferromagnetic layer includes at least one of IrMn, PtMn, FeMn, NiMn, RuRhMn, or CrPtMn.
19. The position detection device according to claim 16, wherein the first reference layer includes CoFe.
20. The position detection device according to claim 1, wherein the non-magnetic intermediate layer includes at least one of Ru, Cr, Rh, Ir, or Re, or an alloy including two or more of Ru, Cr, Rh, Ir, or Re.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0026] Hereinafter, position detection devices according to preferred embodiments of the present invention will be described with reference to drawings. In the description of preferred embodiments of the present invention, the same or corresponding portions in the drawings are denoted by the same reference characters and will not be described repeatedly.
[0027]
[0028] As shown in
[0029] Lens holder 120 holds a lens (not shown). The lens has the optical axis direction. Lens holder 120 has a cylindrical or substantially cylindrical shape centered on an optical axis C of the lens shown in
[0030] In the present preferred embodiment, driving mechanism 130 is a driving mechanism that provides an autofocus function of moving lens holder 120 in the optical axis direction of the lens, which is a direction parallel or substantially parallel to optical axis C. Moreover, driving mechanism 130 is a driving mechanism that provides a camera shake correction function of moving lens holder 120 in an in-plane direction orthogonal or substantially orthogonal to the optical axis direction.
[0031] Driving mechanism 130 includes a piezoelectric motor or an actuator, for example. Driving mechanism 130 is not limited to a configuration including the piezoelectric motor or the actuator, and may be configured to include, for example, a voice coil motor.
[0032] Each of first magnet 140 and second magnet 150 is attached to lens holder 120. Each of first magnetic sensor 160 and second magnetic sensor 170 is fixed on substrate 110. Each of first magnetic sensor 160 and second magnetic sensor 170 is mounted on a mounting surface 111 orthogonal or substantially orthogonal to the Z-axis direction. Mounting surface 111 is a main surface of substrate 110.
[0033] As shown in
[0034] As shown in
[0035] In the present preferred embodiment, first magnet 140 and second magnet 150 are moved together with lens holder 120 in the Z-axis direction and the XY in-plane direction. That is, a relative position of first magnet 140 with respect to first magnetic sensor 160 can be changed in each of the X-axis direction, the Y-axis direction, and the Z-axis direction. A relative position of second magnet 150 with respect to second magnetic sensor 170 can be changed in each of the X-axis direction, the Y-axis direction, and the Z-axis direction.
[0036] First magnetic sensor 160 is disposed at a position not to overlap with first magnet 140 in the Z-axis direction when second magnet 150 and second magnetic sensor 170 are located at positions to overlap with each other in the Z-axis direction. When first magnet 140 and first magnetic sensor 160 are located at positions to overlap with each other in the Z-axis direction, second magnetic sensor 170 is located at a position not to overlap with second magnet 150 in the Z-axis direction.
[0037] First magnetic sensor 160 detects the first magnetic field applied from first magnet 140 relatively moved when lens holder 120 is moved. Second magnetic sensor 170 detects the second magnetic field applied from second magnet 150 relatively moved when lens holder 120 is moved.
[0038]
[0039]
[0040]
[0041] As shown in
[0042] In a range in which the outputs (Vout) of first magnetic sensor 160 and second magnetic sensor 170 have linearity with respect to phases θ of magnetic fields M1, M2 with respect to reference angles B, phases θ of magnetic fields M1, M2 with respect to reference angles B can be detected by first magnetic sensor 160 and second magnetic sensor 170. That is, phases θ of magnetic fields M1, M2 with respect to reference angles B can be detected by first magnetic sensor 160 and second magnetic sensor 170 in a range of a substantially straight inclination portion other than a curved vertex portion in the sin curve.
[0043] On the other hand, when θ = about 90° or θ = about -90°, the outputs (Vout) of first magnetic sensor 160 and second magnetic sensor 170 do not have linearity with respect to phases θ of magnetic fields M1, M2 with respect to reference angles B, with the result that phases θ of magnetic fields M1, M2 with respect to reference angles B cannot be detected by first magnetic sensor 160 and second magnetic sensor 170.
[0044]
[0045] As shown in
[0046] Specifically, for example, as shown in
[0047] First magnetoresistance element MR1, second magnetoresistance element MR2, third magnetoresistance element MR3, and fourth magnetoresistance element MR4 are electrically connected together to define, for example, a Wheatstone bridge circuit. Each of first magnetic sensor 160 and second magnetic sensor 170 may have, for example, a half bridge circuit including first magnetoresistance element MR1 and second magnetoresistance element MR2.
[0048] A group of first magnetoresistance element MR1 and second magnetoresistance element MR2 connected in series and a group of third magnetoresistance element MR3 and fourth magnetoresistance element MR4 connected in series are connected in parallel between power supply terminal Vcc and ground terminal GND. First output terminal V+ is connected to a connection point between first magnetoresistance element MR1 and second magnetoresistance element MR2. Second output terminal V- is connected to a connection point between third magnetoresistance element MR3 and fourth magnetoresistance element MR4.
[0049] Each of first magnetoresistance element MR1, second magnetoresistance element MR2, third magnetoresistance element MR3, and fourth magnetoresistance element MR4 is, for example, a TMR (Tunnel Magneto Resistance) element.
[0050] The outer shape of each of first magnetoresistance element MR1, second magnetoresistance element MR2, third magnetoresistance element MR3, and fourth magnetoresistance element MR4 is quadrangular or substantially quadrangular, for example. First magnetoresistance element MR1, second magnetoresistance element MR2, third magnetoresistance element MR3, and fourth magnetoresistance element MR4 have, for example, a square or substantially square shape. Center Pc of each of first magnetic sensor 160 and second magnetic sensor 170 is located at the center or approximate center of the square.
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[0052] Specifically, a multilayer element 10b includes the plurality of TMR elements 10 layered and connected in series. A plurality of such multilayer elements 10b connected together in series define an element array 10c. A plurality of such element arrays 10c are connected together by connecting ends of element arrays 10c to the other ends of element arrays 10c by leads 20. Thus, the plurality of TMR elements 10 are electrically connected in series in each of first magnetoresistance element MR1, second magnetoresistance element MR2, third magnetoresistance element MR3, and fourth magnetoresistance element MR4.
[0053] As shown in
[0054] As shown in
[0055] Lower electrode layer 11 includes, for example, a metal layer or metal compound layer including Ta and Cu. Anti-ferromagnetic layer 12 is provided on lower electrode layer 11, and includes, for example, a metal compound layer such as IrMn, PtMn, FeMn, NiMn, RuRhMn, or CrPtMn. First reference layer 13 is provided on anti-ferromagnetic layer 12, and includes, for example, a ferromagnetic layer such as CoFe.
[0056] Non-magnetic intermediate layer 14 is provided on first reference layer 13, and includes, for example, a layer of at least one metal selected from Ru, Cr, Rh, Ir, and Re, or a layer including an alloy of two or more of these metals. Second reference layer 15 is provided on non-magnetic intermediate layer 14, and includes, for example, a ferromagnetic layer such as CoFe or CoFeB.
[0057] Tunnel barrier layer 16 is provided on second reference layer 15 and includes, for example, a layer including an oxide containing at least one or two or more of Mg, Al, Ti, Zn, Hf, Ge, and Si, such as magnesium oxide. Free layer 17 is provided on tunnel barrier layer 16 and includes, for example, a layer including CoFeB, a layer including at least one metal of Co, Fe and Ni, or a layer including an alloy of two or more of these metals. Upper electrode layer 18 is provided on free layer 17, and includes, for example, a metal layer such as Ta, Ru, or Cu.
[0058] The magnetization direction of the pinned layer of each of first magnetoresistance element MR1 and fourth magnetoresistance element MR4 and the magnetization direction of the pinned layer of each of second magnetoresistance element MR2 and third magnetoresistance element MR3 are opposite to each other by about 180°.
[0059] Each of first magnetoresistance element MR1, second magnetoresistance element MR2, third magnetoresistance element MR3, and fourth magnetoresistance element MR4 may have a magnetoresistance element such as, for example, a GMR (Giant Magneto Resistance) element or an AMR (Anisotropic Magneto Resistance) element, instead of the TMR element.
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[0062] In
[0063] As shown in
[0064] As shown in
[0065] As shown in
[0066] Controller 180 detects the position of lens holder 120 in the X-axis direction based on a change in the output value of first magnetic sensor 160, detects the position of lens holder 120 in the Y-axis direction based on a change in the output value of second magnetic sensor 170, and detects the position of lens holder 120 in the Z-axis direction based on the changes in the output values of first magnetic sensor 160 and second magnetic sensor 170.
[0067] In the present preferred embodiment, controller 180 detects the position of lens holder 120 in the Z-axis direction based on a change in difference between the output value of first magnetic sensor 160 and the output value of second magnetic sensor 170. However, for example, controller 180 may detect the position of lens holder 120 in the Z-axis direction based on a change in sum of the output value of first magnetic sensor 160 and the output value of second magnetic sensor 170, or may detect the position of lens holder 120 in the Z-axis direction based on a change in only the output value of first magnetic sensor 160 or a change in only the output value of second magnetic sensor 170.
[0068] Controller 180 drives driving mechanism 130 based on the detected position of lens holder 120 in the Z-axis direction so as to move lens holder 120 in the optical axis direction, thus providing the autofocus function.
[0069] Next, controller 180 drives driving mechanism 130 based on the detected positions of lens holder 120 in the X-axis direction and the Y-axis direction so as to move lens holder 120 in the in-plane direction orthogonal or substantially orthogonal to the optical axis direction, thus providing the camera shake correction function.
[0070] In the position detection device according to the present preferred embodiment, the position of lens holder 120 in the X-axis direction is detected based on the change in the output value of first magnetic sensor 160, the position of lens holder 120 in the Y-axis direction is detected based on the change in the output value of second magnetic sensor 170, and the position of lens holder 120 in the Z-axis direction is detected based on the changes in the output values of first magnetic sensor 160 and second magnetic sensor 170. Thus, the positions in the X-axis direction, the Y-axis direction, and the Z-axis direction can be detected based on the output values of the two magnetic sensors.
[0071] Therefore, the size of lens driving device 100 and the number of components can be reduced, with the result that lens driving device 100 can be manufactured inexpensively.
[0072] In the present preferred embodiment, each of first magnetic sensor 160 and second magnetic sensor 170 includes the plurality of magnetoresistance elements that define a bridge circuit. Thus, an output value based on the direction of the magnetic field in the magnetization sensing surface can be obtained.
[0073] In the present preferred embodiment, each of first magnetic sensor 160 and second magnetic sensor 170 is mounted on mounting surface 111 orthogonal or substantially orthogonal to the Z-axis direction. Thus, each of first magnetic sensor 160 and second magnetic sensor 170 can be directly mounted on the main surface of substrate 110, which facilitates mounting of each of first magnetic sensor 160 and second magnetic sensor 170.
[0074] The manner of mounting of each of first magnetic sensor 160 and second magnetic sensor 170 is not limited to the above.
[0075] As shown in
[0076] While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.