Surface-Mountable Semiconductor Laser, Arrangement with Such a Semiconductor Laser and Operating Method for Same

Abstract

A surface-mountable semiconductor laser and an arrangement with such a semiconductor laser are disclosed. In one embodiment, the semiconductor laser is includes a semiconductor layer sequence having at least one generation region between a p-side and an n-side, at least two contact surfaces for external electrical contacting of the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser are contactable without bonding wires, at least one of a plurality of conductor rails extending from a side with the contact surfaces across the semiconductor layer sequence and a plurality of through-connections running at least through the generation region, wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm.sup.2.

Claims

1-14. (canceled)

15. A surface-mountable semiconductor laser comprising: a semiconductor layer sequence having at least one generation region between a p-side and an n-side, the generation region configured to generate laser radiation; at least two contact surfaces for external electrical contacting the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser is contactable without bonding wires; at least one of a plurality of conductor rails extending from a side with the contact surfaces completely across the semiconductor layer sequence and, viewed in a plan view, adjoining an edge of the semiconductor layer sequence so that the conductor rails are only partly surrounded by a material of the semiconductor layer sequence; and a plurality of through-connections running at least completely through the generation region coming from the side of the contact surfaces and, viewed in a plan view, lie within the semiconductor layer sequence so that the through-connections are surrounded all around by a material of the semiconductor layer sequence, wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm.sup.2, wherein at least one of the through-connections or the conductor rails are arranged in at least two rows when viewed in plan view, and in each case at least one of the rows is located on each side of a longitudinal axis, the longitudinal axis being a resonator axis of the semiconductor laser, wherein each of the rows contains at least one of some of the through-connections and of the conductor rails, and wherein the semiconductor laser is an edge emitter.

16. The semiconductor laser according to claim 15, wherein the semiconductor laser comprises the plurality of the conductor rails.

17. The semiconductor laser according to claim 15, wherein the semiconductor laser comprises the plurality of the through-connections.

18. The semiconductor laser according to claim 15, wherein in the semiconductor layer sequence comprises at least two elongated trenches having oblique side surfaces and a bottom surface, wherein the trenches completely penetrate the generation region and are configured to prevent parasitic laser modes, and wherein the trenches are at least partially filled with a material absorbent to the laser radiation.

19. The semiconductor laser according to claim 18, wherein at least some of the through-connections end at the bottom surface, wherein, coming from the through-connections, a metallic current expansion element reaches until at least one of the p-side and the n-side across at least one of the side surfaces, and wherein the current expansion element forms at least a part of the absorbent material.

20. The semiconductor laser according to claim 19, wherein the through-connections lying on both sides of the longitudinal axis on the p-side or on the n-side are connected to one another via a continuous, flat current expansion element, and wherein the current expansion element electrically contacts the generation region in a planar manner.

21. The semiconductor laser according to claim 18, wherein at least one of the through-connections, coming from either the p-side or the n-side, terminates at the bottom surface, and the at least one through-connection covers at least a part of a side surface facing away from the generation region, and wherein either the n-side or the p-side, from which the through-connection does not come from, is electrically contacted by the through-connection.

22. The semiconductor laser according to claim 15, wherein at least one of the through-connections and the conductor rails are arranged mirror-symmetrically with respect to the longitudinal axis when viewed in plan view, and wherein between 8 and 42 inclusive of the through-connections and the conductor rails are present.

23. The semiconductor laser according to claim 15, wherein the semiconductor layer sequence has at least one planar current-conducting layer configured to laterally expand current at one side of the generation region and this side is free of a metallic or oxidic current expansion element, wherein the current-conducting layer is in ohmic contact with one of the contact surfaces, and wherein the current-conducting layer is based on the same semiconductor material system as the generation region and has at least a factor 5 higher average dopant concentration than the generation region.

24. The semiconductor laser according to claim 15, wherein, seen in plan view, a quotient of at least one of a surface area of the through-connections or a surface area of the conductor rails as a whole and a surface area of the generation region is between 0.02 and 0.2 inclusive.

25. The semiconductor laser according to claim 15, further comprising a growth substrate on which the semiconductor layer sequence is grown, wherein the growth substrate is electrically conductive, wherein the semiconductor layer sequence is based on AlInGaAs, and wherein the generation region comprises a plurality of active layers which are connected to one another via tunnel diodes arranged electrically in series within the generation region.

26. The semiconductor laser according to claim 15, wherein the semiconductor layer sequence has at least two generation regions arranged parallel to one another when seen in plan view, and wherein at least one of the contact surfaces is located between the generation regions when viewed in plan view.

27. An arrangement comprising: at least one semiconductor laser according to claim 15; and a driver configured for pulsed operation of the semiconductor laser with time-wise currents of at least 10 A, wherein the semiconductor laser is electrically connected to the driver without bonding wires so that all of the contact surfaces are located on a side of the semiconductor layer sequence facing the driver.

28. A method for operating the arrangement according to claim 27 comprising: operating the semiconductor laser in a pulsed manner with time-wise current densities of at least 30 A/mm.sup.2 in the generation region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0059] A semiconductor laser described herein, an arrangement described herein and an operating method described herein are explained below in more detail with reference to the drawing on the basis of exemplary embodiments. Identical reference signs indicate the same elements in the individual figures. In this case, however, no relationships to scale are illustrated; rather, individual elements can be represented with an exaggerated size in order to afford a better understanding.

[0060] In the figures:

[0061] FIGS. 1 to 4 and FIGS. 16A to 16B show schematic sectional illustrations and plan views of exemplary embodiments of semiconductor lasers;

[0062] FIGS. 5 to 14 and FIGS. 17 to 18 show schematic sectional representations of exemplary embodiments of semiconductor lasers;

[0063] FIG. 15 shows a schematic perspective illustration of a semiconductor laser; and

[0064] FIGS. 19 to 26 and FIGS. 27A to 27E show schematic sectional representations of exemplary embodiments of arrangements described herein with a semiconductor laser.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0065] FIG. 1 illustrates an exemplary embodiment of a semiconductor laser 1, see the sectional view in FIG. 1A and the top view in FIG. 1B.

[0066] The semiconductor laser 1 comprises a growth substrate 7, for example, of GaAs. A semiconductor layer sequence 2, which is preferably based on AlInGaAs, is situated on the growth substrate 7. A generation region 22 is located in the semiconductor layer sequence 2; the generation region 22 is configured for generating laser radiation L by means of charge carrier recombination. An n-conducting n-side n is formed by the electrically conductive growth substrate 7 and a p-conducting p-side p is formed by the semiconductor layer sequence 2.

[0067] Furthermore, the semiconductor laser 1 comprises electrical contact surfaces 31, 32. The electrical contact surfaces 31, 32 are formed by metallic coatings, for example, of chromium, gold, platinum and/or titanium. In this case, the contact surfaces 31, 32 are located on the side with the semiconductor layer sequence 2. The contact surface 31 is an anode contact; the two contact surfaces 32 constitute a cathode contact. In FIG. 1, the generation region 22 below the contact surface 31 can be identical to the semiconductor layer sequence 2 and, thus, can directly adjoin the growth substrate 7 and the contact surface 31.

[0068] The semiconductor layer sequence 2 is directly electrically contacted by means of the contact surface 31. Coming from the contact surfaces 32, electrical through-connections 4 extend completely through the semiconductor layer sequence 2 and through the growth substrate 7 to the n-side n. A current expansion element 33, which is likewise formed from metal layers, is located on the n-side n. The current expansion element 33 is impermeable to the laser radiation L and preferably has a thickness of at least 100 nm, as can also apply to all other exemplary embodiments.

[0069] The semiconductor laser 1 is thus electrically contacted externally by means of the contact surfaces 31, 32, which are located in a common plane, and can be connected without bonding wires being required. A current flow I within the semiconductor laser 1 is symbolized by a dashed line. The through-connections 4 are electrically separated from the semiconductor layer sequence 2 and from the growth substrate 7, for example, by means of electrical insulation layers 8, such as silicon dioxide layers.

[0070] The contact surfaces 31, 32 run parallel to a longitudinal axis A along a longitudinal direction z. The longitudinal axis A simultaneously forms a resonator axis of the edge-emitting semiconductor laser 1. The through-connections 4 run parallel to a growth direction y of the semiconductor laser. The through-connections 4 are arranged symmetrically to the longitudinal axis A. On both sides of the longitudinal axis A, the through-connections 4 extend equidistantly along a straight line parallel to the longitudinal axis A. A diameter of the through-connections 4 is, for example, approximately 20 m; a distance between adjacent through-connections 4 is approximately 10 m, for example. Viewed in a plan view, the generating region 22 extends approximately congruently with the contact surface 31.

[0071] As in all other exemplary embodiments, the growth substrate 7 has, for example, a thickness of at least 50 m and/or of at most 200 m. A thickness of the semiconductor layer sequence 2 along the growth direction y, is, for example, at least 3 m or 5 m and/or at most 25 m. Along the longitudinal direction z, the semiconductor laser 1 has, for example, an extent of at least 300 m or 600 m and/or of at most 5 mm or 3 mm or 2 mm or 1 mm. Along a transverse direction y, a width of the semiconductor laser 1 is in particular at least 200 m or 300 m and/or at most 800 m or 500 m. A proportion of the generation region 22 at the width of the semiconductor laser 1 is, for example, at least 15% or 30% or 45% and/or at most 80% or 70% or 55%.

[0072] Deviating from the representation in FIG. 1, as in all other exemplary embodiments, it is possible that the semiconductor laser 1 is a so-called multi-emitter and/or a laser bar, which has a plurality of semiconductor regions or generation regions 22 which are arranged next to one another and/or are stacked one above the other.

[0073] In FIG. 1B, only one row with the through-connections 4 is drawn on both sides of the longitudinal axis A. As is also possible in all other exemplary embodiments, a plurality of such rows can also be present on each side of the longitudinal axis A.

[0074] In the exemplary embodiment of FIG. 2, the current flow I is schematically illustrated in the plan view in FIG. 2B. In order to simplify the illustration, the insulation layers 8 in FIG. 1 are not shown in FIG. 2.

[0075] In contrast to FIG. 1, the current expansion element 33 is located on the side with the generation region 22 and, hence, the contact surfaces 31, 32 are located on the side of the growth substrate 7 facing away from the generation region 22. The current expansion element 33 connects all through-connections 4 to one another in a whole-area manner.

[0076] Optionally, as is also possible in all other exemplary embodiments, a plurality of trenches 6 are located on the semiconductor layer sequence 2 adjacent to the generation region 22. The trenches 6 preferably extend completely along and parallel to the longitudinal axis A. The trenches 6 can be filled with a material 62 which is absorbent for the laser radiation L. The absorbent material 62 is formed, for example, by an absorbent metal or by an absorbent semiconductor material.

[0077] The basic scheme of the electrical contacting of the semiconductor laser 1 of FIG. 3 corresponds to that of FIG. 1, wherein the trenches 6 with the absorbent material 62 are optionally present.

[0078] As in all other exemplary embodiments, it is possible that the through-connections 4 are not shaped as cylinders, but as a cone or, as illustrated in FIG. 3A, as a double cone. The double cone shape of the through-connections 4 is produced, for example, by etching both sides of the semiconductor layer sequence 2 and of the growth substrate 7 in order to generate the through-connections 4.

[0079] In the exemplary embodiment of FIG. 4, the semiconductor layer sequence 2 additionally comprises a highly doped current-conducting layer 21, which leads to a lateral current spreading, that is, to a current expansion in the transverse direction x and optionally also in the longitudinal direction z. The current-conducting layer 21 extends over the whole area across the semiconductor layer sequence 2 and is located between the generation region 22 and the growth substrate 7. A current flow I is symbolized by arrows.

[0080] According to FIG. 4, the trenches 6 do not reach as far as the current-conducting layer 21. There is no or no significant lateral current expansion within the generation region 22 and within the areas of the semiconductor layer sequence 2 which are different from the current-conducting layer 21. This means that a current flow through the generation region 22 is oriented substantially parallel to the growth direction y.

[0081] Otherwise, the exemplary embodiment of FIG. 4 corresponds to that of FIG. 1.

[0082] The electrical contacting scheme of FIG. 5 corresponds to that of FIG. 2, but no trenches are present.

[0083] FIG. 6 illustrates that the through-connections 4 are located only on one side of the generation region 22, along the transverse direction x. In addition, the contacting preferably corresponds to that illustrated in FIG. 1.

[0084] In the exemplary embodiment of FIG. 7, too, the plated through-connections 4 are present only on one side of the generation region 22, along the transverse direction x. Otherwise, the exemplary embodiment of FIG. 7 corresponds to that of FIG. 5.

[0085] Viewed in a plan view, the through-connections 4 of FIGS. 1 to 7 are each surrounded all around by a material of the semiconductor layer sequence 2. In contrast, no through-connections, but conductor rails 5 are present in FIG. 8. The conductor rails 5 are located at an edge of the semiconductor layer sequence 2, viewed along the transverse direction x. The conductor rails 5 also completely penetrate the semiconductor layer sequence 2 and the growth substrate 7, viewed parallel to the growth direction y. When viewed in a plan view, not illustrated, the conductor rails 5 are, for example, of semicircular shape.

[0086] Otherwise, the exemplary embodiment of FIG. 8 corresponds to that of FIG. 6. In a different manner to that shown in FIG. 8, the conductor rails 5 can also be present on both sides of the generation region 22, analogously to the exemplary embodiment of FIG. 1.

[0087] According to FIG. 9, the contact surfaces 31, 32 and the current expansion element 33 are located on opposite sides of the growth substrate 7 and of the semiconductor layer sequence 2. Otherwise, the description in relation to FIG. 8 applies in the same way to FIG. 9.

[0088] In the exemplary embodiment of FIG. 10, generation regions 22 which are separated from one another are present. Viewed along the transverse direction x, between the generation regions 22 a row with the through-connections 4 is located. In this case, all through-connections 4 are electrically short-circuited via the current expansion element 33. An individual activation of the generation regions 22 can be achieved via the contact surfaces 31. On the semiconductor layer sequence 2, the contact surfaces 32 alternate with the contact surfaces 31, seen along the transverse direction x.

[0089] Otherwise, the exemplary embodiment of FIG. 10 corresponds to that of FIG. 1. In contrast to the illustration in FIG. 10, the contacting scheme of FIG. 5 can also be used so that the contact surfaces 31, 32 and the current expansion element 33 are in each case located on opposite sides, compared with the representation in FIG. 10.

[0090] In the exemplary embodiment of FIG. 11, only one row having the through-connections 4 is present. The two generation regions 22, between which the through-connections 4 are located, can be controlled electrically independently of one another by means of the contact surfaces 31. A current flow I is symbolically illustrated by a dashed line.

[0091] Otherwise, the exemplary embodiment of FIG. 11 corresponds to that of FIG. 5. Alternatively, the contacting scheme of FIG. 1 can be used in the same way.

[0092] In the exemplary embodiment of FIG. 12, two rows of the through-connections 4 are located along the transverse direction x between the generation regions 22. A separate current expansion element 33 is present for each of the generation regions 22. Thus, a first contact surface 31 and a second contact surface 32 are provided for each generation region 22. In other words, in the semiconductor layer sequence 2 and in the growth substrate 7 a total of two of the semiconductor lasers from FIG. 7 are integrated in a single semiconductor laser 1.

[0093] Deviating from the representation in FIG. 12, the contacting scheme of FIG. 6 can also be used. Likewise, two rows of through-connections 4 can be present for each generation region 22 of FIG. 12, so that two of the semiconductor lasers of FIG. 5 can be integrated in an element analogous to FIG. 12.

[0094] In FIGS. 10 to 12, only two generation regions 22 are represented in each case. In the same way, more than two of the generation regions 22 can also be present.

[0095] FIG. 13 illustrates a further type of exemplary embodiments of the semiconductor laser 1. In this case, the trenches 6 are present, which have a bottom surface 60 and side surfaces 61. The bottom surface 60 is oriented perpendicular to the growth direction y, the side surfaces 61 run obliquely to the growth direction y and to the transverse direction x. In the direction away from the growth substrate 7 that can alternatively be formed by a replacement carrier as in all other exemplary embodiments too, a width of the trenches 6 increases continuously.

[0096] Coming from the side with the contact surfaces 31, 32, the through-connections 4 extends completely through the growth substrate 7 and end at the bottom surface 60 of the trench 6. The current expansion element 33 extends across the side surface 61 facing the generation region 22 towards an area of the semiconductor layer sequence 2 above the generation region 22.

[0097] The contacting scheme of FIG. 13 thus corresponds to that of FIG. 7. In the same way, the contacting scheme of FIG. 5 can alternatively be used. Likewise, the contacting scheme of FIG. 9 or of FIG. 9 analogously to FIG. 5 can be used. Thus, the through-connections 4 or the conductor rails 5 each end, as shown in FIG. 13, on the bottom surface 60.

[0098] According to FIG. 14, the contact surfaces 31, 32 are located on the side of the semiconductor layer sequence 2 facing away from the growth substrate 7 or from the replacement carrier. Herein, the semiconductor layer sequence 2 comprises the current-conducting layer 21. Furthermore, as is also possible in all other exemplary embodiments, there is a plurality of active layers 23, between each of which a tunnel diode 24 is located. For example, at least two or at least three and/or at most ten or at most five of the active layers 23 are present.

[0099] The contact surface 31 is located above the generation region 22. In contrast, the contact surface 32 extends through the trench 6 across the through-connections 4 as far as into the current-conducting layer 21. During formation of the trench 6, the current-conducting layer 21 is only partially removed. The through-connection 4 is restricted to the side surface 21 of the trench 6 which faces away from the generation region 22; the trench 6 runs preferably continuous along the longitudinal direction z. The material 62 absorbent for the laser radiation L is optionally located on the side surface 61 facing the generation region 22.

[0100] In the perspective representation of the exemplary embodiment of FIG. 15, variants with respect to the exemplary embodiment of FIG. 14 are illustrated. In this case, for exemplification, the through-connections 4 are designed differently from one another on the left and on the right of the generation region 22. Within a component, all through-holes 4 are preferably of the same design.

[0101] On the left of the generation region 22, according to FIG. 15 the contact surfaces 32 and the through-connections 4 are strip-shaped. On the right-hand side of the generation region 22 in FIG. 15, on the other hand, a single flat contact surface 32 is present, which extends in the form of the continuous through-connection 4 to the current-conducting layer 21 in the trench 6.

[0102] Deviating from the illustration in FIG. 15, see the through-connections 4 on the left-hand side of the generation region 22, a single, continuous contact surface 32 can be provided, from which the through-connections 4 extend in a finger-like manner.

[0103] According to FIG. 15, the trenches 6 are semicircular or semi-round when viewed in cross section. In contrast, in FIG. 14, the trenches are of trapezoidal shape, whereas the trenches have a rectangular shape, for instance, in FIG. 2. The respective shapes of the trenches 6 can be interchanged between the exemplary embodiments so that, for example, in FIG. 14 the trenches 6 can also have a semicircular or rectangular shape.

[0104] Along the transverse direction x, only one half of the semiconductor laser 1 is illustrated in FIG. 16. In the exemplary embodiment of FIG. 16, the contacting scheme is carried out analogously to that of FIGS. 14 and 15. However, the through-connections 4 are located next to the trenches 6 so that the generation region 22 is separated from the through-connections 4 by the trenches 6. In this case, the through-connections 4 extend from a preferably single continuous and strip-shaped contact surface 22 into the current-conducting layer 21. The through-connections 4 are each in the shape of a truncated cone.

[0105] In the exemplary embodiments of FIGS. 17 and 18, the semiconductor layer sequence 2 and the growth substrate 7 or the optional replacement carrier are located on a carrier 9. Such a carrier 9 can also be referred to as a sub-mount. In this case, the position of the semiconductor layer sequence 2 is selected in such a way so that a front edge of the semiconductor layer sequence 2, at which the laser radiation L is emitted, is located at a distance d from a front edge of the carrier 9. The distance d is selected such that the laser radiation L does not just reach the carrier 9.

[0106] Carrier contact surfaces 91 can be larger than the contact surfaces 31, 32, see FIG. 17, or can also terminate flush with the contact surfaces 31, 32, see FIG. 18. The same applies to a connecting means 92, which is, for example, a solder or an electrically conductive adhesive.

[0107] In contrast to the case of light-emitting diode chips, the exemplary embodiments of the semiconductor lasers 1 according to FIGS. 1 to 18 are each edge emitters and not surface emitters. In addition, the through-connections 4 or the conductor rails 5 lie outside the generation region 22, unlike in light-emitting diodes. Furthermore, the generation region 22 can be separated from the through-connections 4 or the conductor rails 5 by a trench, again different than in the case of light-emitting diodes.

[0108] Furthermore, in one direction, in particular along the longitudinal direction y, the through-connections 4 or the conductor rails 5 have a high density whereas a lower density is present along the transverse direction x. In contrast, through-connections that may be present in light-emitting diodes are generally arranged in the same manner in both directions. A lateral current distribution is achieved in particular by the flat, light-impermeable and metallic current expansion element 33. Such a current expansion element 33 cannot be used in light-emitting diodes, since this would prevent light decoupling.

[0109] FIG. 19 illustrates an exemplary embodiment of an arrangement 10. In this case, a semiconductor laser 1, for example, as shown in connection with FIG. 2, is mounted directly on an electric driver 11. Between driver contact surfaces 12 of the driver 11 and the contact surfaces 31, 32, only the connecting means 92 is present. The contact surfaces 31, 32 are dimensioned such that, relative to the through-connections, not shown in FIG. 19, no significant increase in an electrical resistance takes place. In particular, a cross-sectional area of the contact areas 31, 32, 12 is larger than that of the non-illustrated through-connections or conductor rails. A current path I is schematically symbolized by a dashed line.

[0110] The driver 11 is based, for example, on silicon or SiGe or GaN or GaAs. In addition to the electrical control of the semiconductor laser 1, the driver 11 can also be designed as a heat sink for efficiently dissipating heat from the semiconductor laser 1. This can also apply to all other exemplary embodiments.

[0111] In the exemplary embodiment of FIG. 20, in contrast, a semiconductor laser 1 is used, for example, analogously to FIG. 1.

[0112] In the exemplary embodiment of FIG. 21, a plurality of contact surfaces are present, for example, for an anode contact or a cathode contact, see also FIG. 2. The same applies to FIG. 22, in particular in comparison with FIG. 1.

[0113] In the exemplary embodiment of FIG. 23, a plurality of the semiconductor lasers 1 are mounted next to one another on the driver 11. In this case, semiconductor lasers 1 configured analogously to FIG. 5 are used. Alternatively, semiconductor lasers 1 according to FIG. 1 can also be used.

[0114] In the exemplary embodiment of FIG. 24, a plurality of the generation regions 22 are integrated in a common semiconductor laser 1. The semiconductor laser of FIG. 24 is constructed, for example, as explained in conjunction with FIG. 12. The generation regions 22 thus each have their own contact surfaces 31, 32.

[0115] In contrast, electrical contact surfaces 31, 32 are provided for the generation regions 22 in FIG. 25, which divide the generation regions 22 at least in part, see the current profile I, as indicated by the dashed line in FIG. 25. The semiconductor laser 1 used in FIG. 25 corresponds, for example, to the semiconductor laser 1 explained in FIG. 11.

[0116] In the exemplary embodiment of FIG. 26, the carrier 9 is located between the driver 11 and the semiconductor laser 1 as an intermediate carrier or as a sub-mount. As a result, for example, an adaptation of the contact surfaces 31, 32 of the semiconductor laser 1 to the driver contact surfaces 12 can be achieved so that the semiconductor laser 1 and the driver 11 can be efficiently contacted with one another without bonding wires being necessary. Such carriers 9 can also be present in the exemplary embodiments of FIGS. 19 to 25.

[0117] FIG. 27 schematically illustrates further circuit details, which can be used in the same way for all other exemplary embodiments and with which particularly low total inductances can be achieved. The driver 11 particularly preferably comprises a switching element such as a transistor. The basic electrical circuit diagram in FIG. 27A is shown for the case of a transistor, wherein the base/gate G, the emitter/source S and the collector/drain D are shown schematically. Optionally, an RC element having a resistor R, which is connected in parallel with a capacitor C, is arranged upstream of the semiconductor laser 1.

[0118] A schematic plan view is shown in FIG. 27B and a schematic sectional view is shown in FIG. 27C, in which the driver 11 and the semiconductor laser 1 are mounted on a common carrier 9. The driver contact surface 12, D can be designed to be contiguous with the contact surface 32, in particular configured as a cathode. The driver 11 overlaps with the driver contact surfaces 12, D, S, G and the semiconductor laser 1 overlaps with the contact surfaces 31, 32, seen in plan view. The driver contact surface 12, S can be led across a rear side of the carrier 9 and via electrical though-contacts to the contact surface 31, which is designed, for example, as an anode. On the anode side, the RC element 93 is optionally provided upstream of the contact surface 31.

[0119] The plan view of FIG. 27D shows a coplanar arrangement 10, in which the driver 11 and the semiconductor laser 1 are located in the same plane on the carrier 9. Two contact surfaces 31, in particular anodes, and a central contact surface 32 are provided. Electrical lines can run along a direct path with a comparatively large width and/or thickness from the driver 11 to the semiconductor laser 1. The optional RC element, not shown in FIG. 27D, can be integrated in the driver 11, as is also possible in all other exemplary embodiments.

[0120] In the sectional view of FIG. 27E, it can be seen that the carrier 9 for the semiconductor laser 1 simultaneously forms the driver 11. The carrier 9 together with the driver 11 is, for example, an application-specific integrated circuit, ASIC for short. The driver 11 is directly connected to the semiconductor laser 1 by means of the contact surfaces 12, 31, 32.

[0121] The components shown in the figures follow, unless indicated otherwise, preferably in the specified sequence directly one on top of the other. Layers which are not in contact in the figures are preferably spaced apart from one another. If lines are drawn parallel to one another, the corresponding surfaces are likewise oriented parallel to one another. The relative thickness ratios, length ratios and positions of the drawn components relative to one another are correctly reproduced in the figures if not indicated otherwise.

[0122] The invention described herein is not restricted by the description on the basis of the exemplary embodiments. Rather, the invention encompasses any new feature and also any combination of features, which includes in particular any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.