Semiconductor component and method for contacting said semiconductor component

Abstract

The semiconductor component has several regularly arranged active cells (1), each comprising at least one main defining line (8). A bonding wire (18, 20) is fixed to at least one bonding surface (14, 16) by bonding with a bonding tool, oscillating in a main oscillation direction (22, 24), for external electrical contacting. The bonding surfaces (14, 16) are of such a size and oriented such that the main oscillation direction (22, 24) runs at an angle (), with a difference of 90 to the main defining line (8).

Claims

1. A semiconductor component comprising: a plurality of regularly arranged active cells, each .Iadd.of the .Iaddend.active .[.cell.]. .Iadd.cells being embodied in strip form having a rectangular stripe shape and being separated by a rectangular stripe of semiconductor body, each of the active cells .Iaddend.having at least one main boundary line .Iadd.that lies substantially parallel to an outer edge of the semiconductor component, the main boundary line extending parallel to a longitudinal direction of the active cells.Iaddend., and at least one bonding area arranged .[.to be.]. .Iadd.at a top side and .Iaddend.in electrical contact with at least one of said active cells, on which at least one bonding wire is fixed by bonding .[.by means of a bonding tool oscillating in a main oscillation direction.]..Iadd., the at least one bonding wire, bonded to the at least one bonding area, extends lengthwise in a bonding direction along the at least one bonding area.Iaddend., the .Iadd.at least one .Iaddend.bonding area being dimensioned and oriented such that .[.the main oscillation direction.]. .Iadd.a lengthwise boundary line of the at least one bonding area is parallel to the bonding direction of the at least one bonding wire, and the lengthwise boundary line of the at least one bonding area .Iaddend.is .[.set.]. at an angle that is different from 90 with respect to the main boundary line.Iadd.; wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of 0 to about 45 with respect to the main boundary line that extends parallel to the longitudinal direction of the active cells.Iaddend..

2. The semiconductor component as claimed in claim 1, wherein .[.it being possible for the main oscillation direction to be set.]. .Iadd.the lengthwise boundary line of the at least one bonding area is .Iaddend.parallel to the main boundary line.

.[.3. The semiconductor component as claimed in claim 1, wherein the main boundary line lying parallel to an outer edge of the semiconductor component..].

.[.4. The semiconductor component as claimed in claim 1, wherein the active cells being embodied in strip form..].

.[.5. The semiconductor component as claimed in claim 1, wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90 with respect to the large rhombus diagonal..].

.[.6. The semiconductor component as claimed in claim 5, wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal..].

7. A semiconductor component comprising: a plurality of regularly two-dimensionally arranged active cells, .Iadd.each of the active cells being embodied in strip form having a rectangular stripe shape and being separated by a rectangular stripe of semiconductor body, and .Iaddend.each active cell having at least one main boundary line, and at least one bonding area arranged .[.to be.]. .Iadd.at a top side and .Iaddend.in electrical contact with at least one of said active cells, on which at least one bonding wire is fixed by bonding .[.by means of a bonding tool oscillating in a main oscillation direction.]. .Iadd.such that the at least one bonding wire, bonded to the at least one bonding area, extends lengthwise in a bonding direction along the at least one bonding area.Iaddend., the .Iadd.at least one .Iaddend.bonding area being dimensioned and oriented such that .[.the main oscillation direction.]. .Iadd.a longitudinal side of the at least one bonding area is parallel to the bonding direction of the at least one bonding wire, and the longitudinal side of the at least one bonding area .Iaddend.is .[.set.]. at an angle that is different from 90 with respect to the main boundary lines.Iadd.; wherein the active cells being embodied in rectangular fashion and being arranged in a manner rotated through about 45 relative to a rectangular outer contour of the semiconductor component, and the at least one bonding area being embodied in rectangular fashion and running with the longitudinal side parallel to an outer edge of the outer contour.Iaddend..

.[.8. The semiconductor component as claimed in claim 7, wherein the active cells being embodied in rectangular fashion and being arranged in a manner rotated through 45 relative to a rectangular outer contour of the semiconductor component, and the bonding area being embodied in rectangular fashion and running with its longer rectangle side parallel to an outer edge of the outer contour..].

.[.9. The semiconductor component as claimed in claim 7, wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90 with respect to the large rhombus diagonal..].

.[.10. The semiconductor component as claimed in claim 9, wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal..].

11. A semiconductor component comprising: a plurality of regularly arranged active cells, each .Iadd.of the .Iaddend.active .[.cell.]. .Iadd.cells being embodied in strip form having a rectangular stripe shape and being separated by a rectangular stripe of semiconductor body, each of the active cells .Iaddend.having at least one main boundary line .Iadd.that lies substantially parallel to an outer edge of the semiconductor component, the main boundary line extending parallel to the longitudinal direction of the active cells.Iaddend., wherein .[.the.]. .Iadd.at least one .Iaddend.active cell is sensitive to force components acting transversely to said at least one main boundary line during wire bonding, and at least one metallic bonding area arranged .[.to be.]. .Iadd.at a top side and .Iaddend.in electrical contact with at least one of said active cells, on which at least one bonding wire is bonded .[.by means of a bonding tool oscillating in a main oscillation direction.]., .Iadd.the at least one bonding wire, bonded to the at least one metallic bonding area, extends lengthwise in a bonding direction along the at least one metallic bonding area, .Iaddend.the .Iadd.at least one metallic .Iaddend.bonding area being dimensioned and oriented such that .[.the main oscillation direction.]. .Iadd.a lengthwise boundary line of the at least one metallic bonding area is parallel to the bonding direction of the at least one boding wire, and the lengthwise boundary line of the at least one bonding area .Iaddend.is .[.set.]. at an angle that is .Iadd.substantially .Iaddend.different from 90 with respect to the main boundary line .Iadd.that extends parallel to the longitudinal direction of the active cells, the angle being configured to substantially reduce a force component that acts transversely to the main boundary line.Iaddend..

12. The semiconductor component as claimed in claim 11, wherein .[.it being possible for the main oscillation direction to be set.]. .Iadd.the lengthwise boundary line of the at least one bonding area is .Iaddend.parallel to the main boundary line.

13. The semiconductor component as claimed in claim 11, wherein the main boundary line .[.lying.]. .Iadd.is .Iaddend.parallel to an outer edge of the semiconductor component.

.[.14. The semiconductor component as claimed in claim 11, wherein the active cells being embodied in strip form..].

.[.15. The semiconductor component as claimed in claim 11, wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90 with respect to the large rhombus diagonal..].

.[.16. The semiconductor component as claimed in claim 15, wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal..].

.[.17. A semiconductor component comprising: a plurality of regularly two-dimensionally arranged active cells, which have at least first and second main boundary lines, wherein the active cell is sensitive to force components acting transversely to said first and second main boundary line during wire bonding, and at least one metallic bonding area arranged to be in electrical contact with at least one of said active cells, on which at least one bonding wire is bonded by means of a bonding tool oscillating in a main oscillation direction, the bonding area being dimensioned and oriented such that the main oscillation direction is set at an angle that is different from 90 with respect to the first and second main boundary lines..].

.[.18. The semiconductor component as claimed in claim 17, wherein the active cells being embodied in rectangular fashion and being arranged in a manner rotated through 45 relative to a rectangular outer contour of the semiconductor component, and the bonding area being embodied in rectangular fashion and running with its longer rectangle side parallel to an outer edge of the outer contour..].

.[.19. The semiconductor component as claimed in claim 17, wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90 with respect to the large rhombus diagonal..].

.[.20. The semiconductor component as claimed in claim 19, wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal..].

.Iadd.21. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 45 with respect to the main boundary line..Iaddend.

.Iadd.22. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 with respect to the main boundary line..Iaddend.

.Iadd.23. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 to about 45 with respect to the main boundary line..Iaddend.

.Iadd.24. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 or less with respect to the main boundary line..Iaddend.

.Iadd.25. The semiconductor component as claimed in claim 1, wherein an end region of the least one bonding wire extends in the bonding direction..Iaddend.

.Iadd.26. The semiconductor component as claimed in claim 1, wherein the lengthwise boundary line of the at least one bonding area extends across multiple active cells..Iaddend.

.Iadd.27. The semiconductor component as claimed in claim 7, wherein the longitudinal side of the at least one bonding area extends across multiple active cells..Iaddend.

.Iadd.28. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 45 with respect to the main boundary line..Iaddend.

.Iadd.29. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 with respect to the main boundary line..Iaddend.

.Iadd.30. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 to about 60 with respect to the main boundary line..Iaddend.

.Iadd.31. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 to about 45 with respect to the main boundary line..Iaddend.

.Iadd.32. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 45 or less with respect to the main boundary line..Iaddend.

.Iadd.33. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30 or less with respect to the main boundary line..Iaddend.

.Iadd.34. The semiconductor component as claimed in claim 11, wherein the angle is set such that the force component that acts transversely to the main boundary line is reduced by about 50% or more..Iaddend.

.Iadd.35. The semiconductor component as claimed in claim 11, wherein the angle is set such that the force component that acts transversely to the main boundary line is at least about 50% less than another force component that results from the lengthwise boundary line of the at least one bonding area being set at 90 with respect to the main boundary line..Iaddend.

.Iadd.36. The semiconductor component as claimed in claim 11, wherein the lengthwise boundary line of the at least one metallic bonding area extends across multiple active cells..Iaddend.

Description

BRIEF DESCRIPTION OF THE DRAWING

(1) Exemplary embodiments of the invention are explained in more detail below with reference to a drawing, in which, diagrammatically:

(2) FIG. 1 shows a first exemplary embodiment of a semiconductor component according to the invention in plan view,

(3) FIG. 2 shows a further exemplary embodiment of a semiconductor component according to the invention in plan view, and

(4) FIG. 3 shows a third exemplary embodiment of a semiconductor component according to the invention in plan view.

DESCRIPTION OF THE INVENTION

(5) The semiconductor component shown in FIG. 1 has a multiplicity of active cells 1 in the form of strip cells which are formed regularly along a repetition direction R. The strip cells 1 are formed in a common semiconductor body 2. The semiconductor body or semiconductor chip has a rectangular shape and outer boundary edges 4. The strip cells 1 have a longitudinal extent in the direction of the double arrow 6 and main boundary lines 8 parallel to the longitudinal extent. With regard to mechanical loading, the main boundary lines 8 are particularly sensitive to force components which act on the strip cells 1 transversely, i.e., in the exemplary embodiment, at right angles to the main boundary lines 8 in the direction of the double arrow (critical direction) 10.

(6) On the top side 12 of the semiconductor component, provision is made of metallic connecting areas 14, 16 for making electrical contact by means of bonding wires 18, 20. The connecting areas 14, 16 are also referred to as bonding areas or bonding pads. The end regions of the bonding wires are conductively connected to the bonding areas 14, 16 by bonding.

(7) A particularly high mechanical loading on the strip cells 1 results during the bonding operation if the main oscillation direction 22 of the bonding tool runs transversely to the strip cells 1 or transversely to the main boundary lines 8 thereofi.e. in the critical direction 10 of the double arrow. An arrangement of the bonding area 14 at an angle of 30 with respect to the main boundary line (parallel to the longitudinal direction of the strip cell) already leads to a force component K reduced by 50% in the critical direction 10. This is because, with Ktot=total force exerted by the bonding tool, said component is dimensioned as K=Ktot*sin =Ktot*0.5.

(8) An optimum reduction (to 0 in this example) of the force component that acts transversely to the critical direction results in the case of the orientation chosen for the bonding area 16. In this case, the main extent of the bonding area embodied in rectangular fashion is oriented parallel to the main boundary lines 8. The bonding tool can thus be positioned in such a way that its main oscillation direction 24 lies parallel to the main boundary lines 8 and no force component arises transversely to the main boundary lines 8. In this exemplary embodiment, in terms of production engineering, the main boundary line and thus the main oscillation direction advantageously lie parallel to the outer boundary edge 4 of the semiconductor component.

(9) FIG. 2 shows a further exemplary embodiment of a semiconductor component according to the invention, in which a multiplicity of active cells 30 having an essentially square basic shape are arranged in a mesh-like grid. The active cells 30 thus in each case have two pairs of main boundary lines 34, 35 running at right angles with respect to one another. In the exemplary embodiment, the active cells 30 are oriented in a manner offset by 45 relative to the outer contour 40 or the outer edges 40a, 40b thereof. This is illustrated by dashed auxiliary lines 46, 48 correspondingly running at an angle of 45 with respect to the edges 40a, 40b. A bonding area 50 is applied on the top side of the semiconductor component. As described above, a bonding wire 52 is electrically conductively connected to said bonding area by bonding for the purpose of bonding of the semiconductor component. The bonding wire 52 has been bonded by means of a bonding tool, the main oscillation direction 54 of which runs in each case at an angle of 45 with respect to the main boundary lines 34, 35 or the auxiliary lines 46, 48. In this exemplary embodiment, too, the orientation of the bonding area 50 enables the bonding forces acting on the main boundary lines of the active cells to be minimized since the bonding forces do not act perpendicularly on any of the main boundary lines, but rather only with the component reduced by the corresponding angle function cos (45). In the case of this configuration, it is not possible in practice to completely relieve the loading on the main boundary lines, since this would mean full loading on the other main boundary line.

(10) Thus, a uniform distribution of the force components is preferably sought, which is effected according to FIG. 2 by virtue of the fact that the main oscillation direction 54 runs parallel to the edges 40a, 40b and the active cells are embodied in a manner rotated through 45 so that the main oscillation direction 54 is parallel to the respective diagonal D of the rhomboid active cells 30.

(11) FIG. 3 shows a variant of the further exemplary embodiment of a semiconductor component according to the invention as shown in FIG. 2, here a multiplicity of active cells 60 having an essentially rhomboid basic shape being arranged in a mesh-like grid. However, the rhombus shape of these active cells is asymmetrical in so far as the rhombi have different internal angles and thus a small 62 and a large diagonal 63. In this case, a bonding area 64 formed on the top side of the semiconductor component is dimensioned and oriented such that the main oscillation direction 66 of the bonding tool can be set at an angle that is different from 90in the optimum case parallel to the large diagonal 63. This configuration and dimensioning rule is advantageous if, as indicated by auxiliary lines in FIG. 3, the active cells are not arranged in a right-angled grid or mesh, but rather e.g. along two directions R1, R2 which form an angle of e.g. 45.