VOLTAGE-CONTROLLABLE CAPACITOR COMPRISING A FERROELECTRIC LAYER AND METHOD FOR PRODUCING THE VOLTAGE-CONTROLLABLE CAPACITOR COMPRISING A FERROELECTRIC LAYER

Abstract

The present invention relates to a voltage-controllable capacitor comprising a first electrode layer (4) composed of a non-ferroelectric material, said first electrode layer being applied on a substrate (6), a ferroelectric interlayer (3) having a thickness that is less than the thickness of the first electrode layer (4), and a second electrode layer (2) composed of a non-ferroelectric material. The ferroelectric interlayer (3) is arranged between the first electrode layer (4) and the second electrode layer (2).

Claims

1. Voltage-controllable capacitor comprising a first electrode layer (4) composed of a non-ferroelectric material, said first electrode layer being applied on a substrate (6), a ferroelectric interlayer (3), and a second electrode layer (2) composed of a non-ferroelectric material, wherein the ferroelectric interlayer (3) is arranged between the first electrode layer (4) and the second electrode layer (2).

2. Voltage-controllable capacitor according to claim 1, characterized in that a covering layer (1), preferably a hard mask, composed of an electrically conductive material is deposited on the second electrode layer (2).

3. Voltage-controllable capacitor according to claim 1, characterized in that the ferroelectric interlayer (3) is embodied from hafnium oxide doped with silicon, aluminium, germanium, magnesium, calcium, strontium, barium, titanium, rare earth element, or undoped hafnium oxide or from zirconium oxide (ZrO2) doped with silicon, aluminium, germanium, magnesium, calcium, strontium, barium, titanium, a rare earth element, or undoped zirconium oxide, or at least comprises one of the chemical elements mentioned.

4. Voltage-controllable capacitor according to claim 1, characterized in that the ferroelectric interlayer (3) is embodied in multi-layered fashion and comprises at least one layer composed of an oxide layer having a thickness of less than 3 nm and a hafnium oxide layer having a thickness of between 3 nm and 20 nm.

5. Voltage-controllable capacitor according to claim 1, characterized in that the ferroelectric interlayer (3) is embodied with a thickness of less than 50 nm.

6. Voltage-controllable capacitor according to claim 1, characterized in that the first electrode layer (4) and/or the second electrode layer (2) are/is embodied from titanium nitride, ruthenium oxide and/or platinum.

7. Method for producing a voltage-controllable capacitor, wherein a first electrode layer (4) composed of a non-ferroelectric material is applied on a substrate (6), a ferroelectric interlayer (3) is applied on the first electrode layer (4), and a second electrode layer (2) is applied on the ferroelectric interlayer (3).

8. Method according to claim 7, characterized in that the first electrode layer (4) is deposited on a planar surface of the substrate (6) by means of atomic layer deposition or chemical vapour deposition.

9. Method according to claim 7, characterized in that the ferroelectric interlayer (3) is applied by means of atomic layer deposition, in particular by means of atomic layer deposition comprising alternating deposition cycles of a dielectric material and a dopant.

Description

IN THE FIGURES

[0021] FIG. 1 shows a schematic lateral view of a voltage-controllable capacitor, and

[0022] FIG. 2 shows a perspective view of the voltage-controllable capacitor with further control electronics.

[0023] A voltage-controllable capacitor is illustrated in a schematic lateral view in FIG. 1. On a semiconductor substrate 6 composed of highly doped silicon, a first electrode layer 4 composed of titanium nitride is deposited on a planar outer surface of the substrate 6. A ferroelectric interlayer 3 embodied from doped hafnium oxide is applied on the first electrode layer 4, likewise in a planar configuration. In this case, the ferroelectric interlayer 3 can be applied as doped or undoped hafnium oxide or zirconium oxide. Optionally, a layer-by-layer or ply-by-ply deposition of hafnium oxide or zirconium oxide followed by a further oxide layer is effected, thus resulting in an alternating layer construction, a so-called ultralaminate. In this case, the ferroelectric interlayer 3 completely covers the first electrode layer 4, but is itself covered only partly by a second electrode layer 2. Finally, a hard mask 1 composed of an electrically conductive material is applied in a manner covering the first electrode layer 2. The hard mask 1 has a thickness of typically 10 nm to 1000 nm.

[0024] The first electrode layer 4 is applied conformally by means of atomic layer deposition, that is to say in such a way that no holes or cavities remain in the layer. Likewise by means of atomic layer deposition, the ferroelectric interlayer 3 is applied conformally, with use being made of alternating atomic layer deposition cycles for hafnium oxide or zirconium oxide and a corresponding dopant, for example silicon. In further exemplary embodiments, the hafnium oxide or zirconium oxide can also be applied in undoped fashion. In this case, a thickness of the ferroelectric interlayer 3 is less than 100 nm and, in particular, less than the thickness of the first electrode layer 4, which is 10 nm in the exemplary embodiment illustrated.

[0025] The second electrode layer 2 is likewise applied by atomic layer deposition with a thickness of 5 nm to 500 nm, preferably 10 nm to 30 nm, in a conformal configuration. The thickness of the first electrode layer 4 and the thickness of the second electrode layer 2 can be identical, but the two thicknesses can also deviate from one another. The hard mask 1 can finally be structured and finalized by means of lithography and etching and cleaning. A voltage source 5 can be embodied in an electrically conductively connected manner likewise on the substrate 6 between the hard mask 1 and the substrate 6 or between the second electrode layer 2 and the substrate 6. The capacitance of the varactor thus produced is frequency-independent for frequencies of up to approximately 80 GHz and is therefore usable both for 5G circuits and for radar circuits. The temperature dependence, by contrast, is lower than in other voltage-variable capacitors. Likewise, only little phase noise is observed.

[0026] FIG. 2 illustrates, in a perspective view, the substrate 6 with the hard mask 1 as surface of the voltage-controllable capacitor situated underneath. In this figure, recurring features are provided with reference signs identical to those in FIG. 1. Control electronics 8 are additionally arranged on the substrate 6, said control electronics being in electrical contact with the hard mask 1 via an electrically conductive connection 7. In order to ensure DC protection, the voltage-controllable capacitor described can also be operated in a series-connected manner. As a result, very high DC voltages can be applied to the voltage-controllable capacitor and a decoupling of the control voltage from the input or RF signal to be controlled is made possible.

[0027] Features of the various embodiments that are disclosed only in the exemplary embodiments can be claimed in combination with one another and individually.