Heat dissipation substrate and method for producing same

Abstract

The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties.

Claims

1. A heat dissipating substrate which is a composite substrate consisting of: a single crystal silicon layer having a thickness of 1 to 10 m, wherein the single crystal silicon layer comprises a region where transistors are fabricated as a silicon semiconductor device, an AIN handle substrate composed of aluminum nitride and having a thickness of 100 to 750 m, and a SiC intermediate layer between the single crystal silicon layer and the AIN handle substrate, the SiC intermediate layer being composed of silicon carbide and having a thickness of 1 to 30 m, wherein the SiC intermediate layer has a thermal conductivity which is higher than a thermal conductivity of the AIN handle substrate and is disposed directly on the AIN handle substrate, wherein heat occurring in the single crystal silicon layer is conducted to a substrate plane of the AIN handle substrate uniformly via the SiC intermediate layer for dissipating the heat, thereby the heat generated near transistors which are fabricated in the single crystal silicon layer as a silicon semiconductor device is conducted to the AIN handle substrate via the SiC intermediate layer for dissipating the heat, and wherein the overall composite substrate has greater heat dissipation than silicon alone.

2. The heat dissipating substrate of claim 1, wherein the heat conductivity from a front surface to a back surface of the overall composite substrate is equivalent to that of aluminum nitride alone.

3. The heat dissipating substrate of claim 1, which is an SOI composite substrate.

4. A method for preparing the heat dissipating substrate of claim 1, comprising the steps of: depositing the SiC intermediate layer composed of silicon carbide directly on the AIN handle substrate composed of aluminum nitride, subjecting the surfaces of the SiC intermediate layer on the AIN handle substrate and a silicon wafer composed of single crystal silicon to plasma surface activating treatment to enhance bond strength, prior to bonding, bonding the silicon wafer to the SiC intermediate layer on the AIN handle substrate, wherein the SiC intermediate layer has the thermal conductivity which is higher than the thermal conductivity of the AIN handle substrate, so as to construct a multilayer structure of silicon wafer/SiC intermediate layer/AIN handle substrate, and thinning the silicon wafer to a thickness of 1 to 10 m, to obtain the single crystal silicon layer, thus yielding the heat dissipating substrate in the form of the composite substrate of three layers, the single crystal silicon layer, the SiC intermediate layer, and the AIN handle substrate.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a cross-sectional view of a composite substrate according to one embodiment of the invention.

(2) FIG. 2 is a cross-sectional view of a composite substrate according to another embodiment of the invention.

(3) FIGS. 3A to 3C illustrate one exemplary method for preparing a composite substrate of two-layer structure, wherein FIG. 3A shows layers as furnished, FIG. 3B shows the bonded layers, and FIG. 3C shows thinning of first layer, all in cross-sectional view.

(4) FIGS. 4A to 4C illustrate another exemplary method for preparing a composite substrate of two-layer structure, wherein FIG. 4A shows layers as furnished, FIG. 4B shows the bonded layers, and FIG. 4C shows thinning of first layer, all in cross-sectional view.

(5) FIGS. 5AA to 5C illustrate one exemplary method for preparing a composite substrate of three-layer structure, wherein FIGS. 5AA to 5AC show layers as furnished, FIG. 5B shows the bonded layers, and FIG. 5C shows thinning of first layer, all in cross-sectional view.

(6) FIGS. 6AA to 6C illustrate another exemplary method for preparing a composite substrate of three-layer structure, wherein FIGS. 6AA to 6AC show layers as furnished, FIG. 6B shows the bonded layers, and FIG. 6C shows thinning of first layer, all in cross-sectional view.

(7) FIG. 7 is a diagram showing the thermal conductivity of samples in Example.

(8) FIG. 8 is a diagram showing the thermal conductivity of samples in Comparative Example.

DESCRIPTION OF EMBODIMENTS

(9) The heat dissipating substrate of the invention has a two-layer structure (FIG. 1) or three-layer structure (FIG. 2) including a surface layer (first layer) of single crystal silicon.

(10) In one embodiment wherein the structure is composed of two layers, an under layer (second layer) 2 disposed below a silicon layer (first layer) 1 has a higher thermal conductivity than silicon.

(11) In another embodiment wherein the structure is composed of three layers, a third layer 3 disposed below a silicon layer (first layer) 1 has a thermal conductivity which is higher than the first layer 1 and higher than or approximately equal to a second layer 2. In addition, the second layer 2 has a higher thermal conductivity than the first layer 1. The reason why the thermal conductivity of the third layer is the highest is that since it is contemplated that heat occurring in the first layer is generated near transistors, conducting the heat in the chip plane uniformly can promote heat dissipation in a pseudo manner.

(12) In both the embodiments, there are several candidate materials for the second and third layers. It is difficult to employ metal materials because of the intended use in the semiconductor application. Materials suited in the semiconductor application include diamond, aluminum nitride, and silicon carbide. Silicon, diamond, aluminum nitride, silicon carbide, and SiO.sub.2 have thermal conductivity values as shown below, the values being as measured by the laser flash method to be described later.

(13) TABLE-US-00001 Si: 1.5 W/cm .Math. K Diamond: 10-20 W/cm .Math. K Aluminum nitride: 1.5-2.0 W/cm .Math. K Silicon carbide: 2.0-3.8 W/cm .Math. K SiO.sub.2: 0.015 W/cm .Math. K

(14) Of these, SiO.sub.2 having an extremely low thermal conductivity is apparently unsuitable for use as heat-dissipating substrates.

(15) A multilayer structure as mentioned above may be manufactured by several methods. In the case of two-layer structure, a method of manufacturing the structure by bonding a substrate to become a donor substrate (silicon wafer) to a handle substrate is contemplated. In the case of three-layer structure, a method of manufacturing the structure by depositing a material on a donor and/or handle substrate to form a third layer, and bonding the substrates together is contemplated.

(16) Herein, a silicon substrate may be thinned to the desired thickness prior to use. The methods of thinning a silicon layer to become the first layer to the desired thickness include a thinning method of machining and polishing a silicon wafer; and a method of implanting ions into a silicon wafer, followed by bonding and peeling (ion implantation peeling method, for example, ion implantation/mechanical peeling method such as SiGen method).

(17) Now referring to FIGS. 3A to 3C, one exemplary method for preparing a two-layer structure is illustrated. A first layer (Si) 1 and a second layer 2 are furnished in FIG. 3A, they are bonded in FIG. 3B, and the first layer 1 is thinned to the desired thickness by machining and polishing in FIG. 3C.

(18) FIGS. 4A to 4C illustrate another exemplary method for preparing a two-layer structure. First, an ion implanted region 1.sub.ion is formed in one surface of a first layer (Si) 1 in FIG. 4A, the first layer 1 on its ion implanted region 1.sub.ion side is bonded to a second layer 2 in FIG. 4B, and thereafter, the first layer 1 is peeled at the ion implanted region 1.sub.ion, thereby yielding a composite substrate having a thus thinned first layer (silicon layer) 1a bonded to the second layer 2 in FIG. 4C. Although the method of forming the ion implanted region 1.sub.ion is not particularly limited, one exemplary method is by implanting a predetermined dose of hydrogen ions or rare gas ions in a sufficient implantation energy amount to form an ion implanted region 1.sub.ion at the desired depth from the surface of the first layer 1. The depth from the first layer 1 surface (through which ions are implanted) to the ion implanted region 1.sub.ion (i.e., ion implantation depth) corresponds to the desired thickness of the thinned first layer. Desirably the thickness of ion implanted region 1.sub.ion (i.e., ion distribution thickness) is such that the layer may be readily peeled by mechanical impact or the like.

(19) FIGS. 5AA to 5C illustrate one exemplary method for preparing a three-layer structure. First, a first layer (Si) 1, a second layer 2, and a third layer 3 are furnished in FIGS. 5AA to 5AC, these layers are bonded in FIG. 5B, and thereafter, the first layer (Si) 1 is thinned to the desired thickness by machining and polishing in FIG. 5C.

(20) In this embodiment, any procedure is acceptable, the second layer 2 having the third layer 3 deposited thereon may be bonded to the first layer 1 (FIG. 5AA); the first layer 1 having the third layer 3 deposited thereon may be bonded to the second layer 2 (FIG. 5AB); or the first layer 1 having the third layer 3 deposited thereon and the second layer 2 having the third layer 3 deposited thereon may be bonded together (FIG. 5AC).

(21) FIGS. 6AA to 6C illustrate another exemplary method for preparing a three-layer structure. First, an ion implanted region 1.sub.ion is formed in a first layer (Si) 1 from its bonding surface side in FIGS. 6AA to 6AC, the first layer 1 on its ion implanted region 1.sub.ion side is bonded to a third layer 3 and a second layer 2 in FIG. 6B, and thereafter, the first layer 1 is peeled at the ion implanted region 1.sub.ion in FIG. 6C. In this embodiment, any procedure is acceptable, the second layer 2 having the third layer 3 deposited thereon may be bonded to the first layer 1 on its ion implanted region 1.sub.ion side (FIG. 6AA); the first layer 1 having the third layer 3 deposited thereon at its ion implanted region 1.sub.ion side may be bonded to the second layer 2 (FIG. 6AB); or the first layer 1 having the third layer 3 deposited on its surface at the ion implanted region 1.sub.ion side and the second layer having the third layer 3 deposited thereon may be bonded together (FIG.

(22) 6AC). In this embodiment, the method of forming the ion implanted region 1.sub.ion the ion implantation depth, and the ion distribution thickness are the same as in FIGS. 4A to 4C.

(23) In the above embodiments, the first layer of single crystal silicon preferably has a thickness of 1 to 20 m, especially 1 to 10 m. Also preferably, the second layer has a thickness of 1 to 800 m, especially 100 to 750 m, and the third layer has a thickness of 1 to 30 m.

(24) It is noted that the invention is not limited to the aforementioned preparation methods. Also, prior to the bonding step, any of well-known surface activating treatments such as ozone water treatment, UV ozone treatment, ion beam treatment, and plasma treatment may be carried out in order to increase the bond strength.

EXAMPLES

(25) Examples and Comparative Examples are given below for illustrating the invention, but the invention is not limited thereto.

Example

(26) In Example, the following composite materials were measured for thermal conductivity. Measurement is by the laser flash method according to JIS R1611-1997. This is achieved by uniformly irradiating pulse laser to single crystal silicon on the front surface for instantaneous heating, and observing a temperature change on the back surface. In the case of a composite substrate, the measurement is an approximation on the assumption that the overall substrate is made of uniform material. Si/SiC (Si layer has a thickness of 1.0 m, SiC substrate has a thickness of 625 m) Si/SiC/AlN (Si layer thickness 1 m, SiC layer thickness 1.0 m, AlN substrate thickness 625 m) Si/diamond/SiC (Si layer thickness 1 m, diamond layer thickness 1.0 m, SiC substrate thickness 625 m) Si/diamond/AlN (Si layer thickness 1 m, diamond layer thickness 1.0 m, AlN substrate thickness 625 m)

(27) The composite materials are prepared by the following methods. Si/SiC was prepared by the method of FIGS. 3A to 3C. Si/SiC/AlN was prepared by the method of FIGS. 4A to 4C. Si/diamond/SiC and Si/diamond/AlN were prepared by the method of FIGS. 6AA, 6B and 6C.

(28) In any of the above substrates, the surfaces of both substrates are subjected to plasma activating treatment to enhance bond strength, prior to bonding.

(29) The results are shown in FIG. 7. The values of thermal conductivity are shown below.

(30) TABLE-US-00002 Si/SiC: 1.85 W/cm .Math. K Si/SiC/AlN: 1.75 W/cm .Math. K Si/diamond/SiC: 2.2 W/cm .Math. K Si/diamond/AlN: 1.78 W/cm .Math. K

(31) It is demonstrated that all samples have greater heat dissipation than silicon alone.

Comparative Example

(32) In Comparative Example, the following materials were measured for thermal conductivity. Measurement is by the laser flash method as above. This is achieved by uniformly irradiating pulse laser to the front surface for instantaneous heating, and observing a temperature change on the back surface. In the case of a composite substrate (SOI), the measurement is an approximation on the assumption that the overall substrate is made of uniform material. Silicon (thickness 625 m) SOI wafer (SOI layer 1 m, Box layer 0.5 m, handle wafer 625 m) The SOI wafer was obtained by providing a handle wafer which was a single crystal silicon wafer having silicon oxide film formed on its surface and a donor wafer which was a silicon substrate having an ion implanted region formed therein, bonding the handle wafer to the donor wafer via the silicon oxide film, and mechanically peeling the donor wafer at the ion implanted region, thereby transferring the silicon thin film to the handle wafer. Aluminum nitride (prepared by the CVD method, thickness 625 m) Silicon carbide (prepared by the CVD method, thickness 625 m)

(33) The results are shown in FIG. 8. The values of thermal conductivity are shown below.

(34) TABLE-US-00003 Silicon (Si): 1.5 W/cm .Math. K SOI wafer: 0.6 W/cm .Math. K Aluminum nitride (AlN): 1.8 W/cm .Math. K Silicon carbide (SiC): 2.3 W/cm .Math. K

(35) As to diamond, an estimated value is shown below because bulk substrates are substantially unavailable. Diamond: 11 W/cm.Math.K

REFERENCE SIGNS LIST

(36) 1 first layer (Si)

(37) 1a thinned first layer (silicon layer)

(38) 1.sub.ion ion implanted region

(39) 2 second layer

(40) 3 third layer