HALFWAY CUTTER CHANGING METHOD FOR LARGE-AREA MICROSTRUCTURE CUTTING BASED ON IN-SITUATION FILM THICKNESS MEASUREMENT
20200023441 ยท 2020-01-23
Assignee
Inventors
- Tianfeng Zhou (Beijing, CN)
- Benshuai RUAN (Beijing, CN)
- Jia ZHOU (Beijing, CN)
- Longlong TANG (Beijing, CN)
- Zhiqiang Liang (Beijing, CN)
- Li Jiao (Beijing, CN)
- Zhibing Liu (Beijing, CN)
- Lijing Xie (Beijing, CN)
- Pei YA N (Beijing, CN)
- Xibin Wang (Beijing, CN)
Cpc classification
B23P13/02
PERFORMING OPERATIONS; TRANSPORTING
B23Q17/20
PERFORMING OPERATIONS; TRANSPORTING
B23Q11/10
PERFORMING OPERATIONS; TRANSPORTING
B23B1/00
PERFORMING OPERATIONS; TRANSPORTING
International classification
B23B1/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
The present invention demonstrates a halfway cutter changing method for large-area microstructure cutting based on in-situation film thickness measurement, including the following steps: step 110: preparatory work; step 120: workpiece preliminary machining; step 130: transparent film coating; step 140: film thickness detection; step 150: halfway cutter changing; and step 160: machining completion. The halfway cutter changing method for the large-area microstructure cutting based on the in-situation film thickness measurement provided by the present invention implements machining of a microstructure with large area, high quality and high uniformity.
Claims
1. A halfway cutter changing method for large-area microstructure cutting based on in-situation film thickness measurement, comprising the following steps: step 110: self-cutting of a vacuum chuck: machining, by turning/milling, the vacuum chuck on a spindle of a machine tool to be flat; step 120: workpiece flat machining: mounting a workpiece to the vacuum chuck, performing end surface flat machining on the workpiece, and making the microstructure to-be-machined workpiece to be completely planarly parallel to the vacuum chuck; step 130: film coating: coating a transparent film on a machined surface of the workpiece, using a cutter to turn/mill the transparent film to be flat, meanwhile, recording a Z.sub.0 point by the machine tool; step 140: film thickness detection: using an online measuring device to measure a thickness T.sub.0 of the coated film, and when a depth of a machined microstructure is D, only feeding the cutter for T.sub.0+D based on the determined reference point Z.sub.0 so that the machining can be started; step 150: halfway cutter changing: when the cutter for cutting is worn, repeating the step 130, performing plane turning/milling machining on a remaining film once again, meanwhile, recording a Z.sub.1 point by the machine tool; and repeating the step 140, measuring a thickness T.sub.1 of the film, and feeding for T.sub.1+D to perform the machining of the microstructure continuously; step 160: machining completion: successively repeating the above steps till the whole microstructure is machined completely; and step 170: film removal: if necessary, placing a machined workpiece into an organic solvent to dissolve, cleaning and drying to obtain a machined workpiece having a microstructure array on a surface.
2. The halfway cutter changing method for the large-area microstructure cutting based on the in-situation film thickness measurement according to claim 1, wherein the online measuring device in the step 140 is an ellipsometer; and the ellipsometer comprises a light source, a polarizer and a wave plate located on a same straight line, as well as a polarization analyzer and a photoelectric detector angularly disposed with a connection line for the light source, the polarizer and the wave plate.
3. The halfway cutter changing method for the large-area microstructure cutting based on the in-situation film thickness measurement according to claim 2, wherein a measurement accuracy of the ellipsometer is 0.1 nm.
4. The halfway cutter changing method for the large-area microstructure cutting based on the in-situation film thickness measurement according to claim 3, wherein the transparent material is a transparent film; and the transparent film is made of a room temperature easily-curable film forming material such as polymethyl methacrylate (PMMA), polypropylene (PP), polyvinyl chloride (PVC), polystyrene (PS), polycarbonate (PC) or polyethylene terephthalate (PET).
5. The halfway cutter changing method for the large-area microstructure cutting based on the in-situation film thickness measurement according to claim 4, wherein the vacuum chuck is made of an aluminum alloy material.
6. The halfway cutter changing method for the large-area microstructure cutting based on the in-situation film thickness measurement according to claim 5, wherein the cutter is an arc turning cutter or a plane end milling cutter/ball end milling cutter.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] To describe the technical solutions in the embodiments of the present invention or in the prior art more clearly, the following briefly describes the accompanying drawings required for describing the embodiments. Apparently, the accompanying drawings in the following description show some embodiments of the present invention, and a person of ordinary skill in the art may still derive other drawings from these accompanying drawings without creative efforts.
[0026]
[0027] In the FIGURE: 1. cutter, 2. vacuum chuck, 3. workpiece, 4. transparent film, and 5. ellipsometer.
DETAILED DESCRIPTION
[0028] The following clearly and completely describes the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are merely a part rather than all of the embodiments of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0029] An objective of the present invention is to provide a halfway cutter changing method for large-area microstructure cutting based on in-situation film thickness measurement, to solve the problems of the above prior art, and implement machining of a microstructure with large area, high quality and high uniformity.
[0030] To make the foregoing objective, features, and advantages of the present invention clearer and more comprehensible, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0031] Referring to
Embodiment 1
[0032] As shown in
[0033] A transparent material (a room temperature easily-curable film forming material such as PMMA, PP, PVC, PS, PC and PET) is coated on the machined surface of the ultrahard material workpiece to form a transparent film 4, the cutter 1 is used to turn/mill it to be flat, meanwhile, a machine tool records a Z.sub.0 point. An ellipsometer 5 is used to measure a thickness T.sub.0 of the coated transparent film 4, and when a depth of a machined microstructure is D, the cutter is only fed for T.sub.0+D based on the determined reference point Z.sub.0 so that the machining can be started.
[0034] When a cutting distance is accumulated to a certain length, the wear of the cutter 1 cannot be ignored. If the same cutter 1 is used continuously to machine, the machining of the microstructure with high quality, large area and high uniformity cannot be completed. In order to continuously complete the machining of the microstructure, a cutter 1 need to be changed or a blade is selected to be ground and reinstalled at this time. After the cutter is changed, in order to determine a reference point of the cutter, a remaining transparent film material is coated on a to-be-machined surface once again to form a transparent film 4, the plane turning/milling machining is performed, meanwhile, the machine tool records a Z.sub.1 point; and a thickness T.sub.1 of the transparent film 4 is measured, then the cutter is fed for T.sub.1+D to continuously perform the machining of the microstructure, and the above steps are repeated successively till the whole microstructure is machined completely. Since the measurement accuracy of the ellipsometer 5 is 0.1 nm, an error of the reference point of the cutter may be controlled at a nano level and the error of the reference point for changing the cutter may be ignored. With the method provided by the present invention, a machining error caused by wear of the cutter in a cutting process can be prevented, and the machining of the microstructure with the large area, the high quality and the high uniformity is implemented.
[0035] Several examples are used for illustration of the principles and implementation methods of the present invention. The description of the embodiments is used to help illustrate the method and its core principles of the present invention. In addition, those skilled in the art can make various modifications in terms of specific embodiments and scope of application in accordance with the teachings of the present invention. In conclusion, the content of this specification shall not be construed as a limitation to the invention.