Tile for an active electronically scanned array (AESA)

Abstract

In one aspect, an active electronically scanned array (AESA) tile includes a radiator structure and oxide-bonded semiconductor wafers attached to the radiator structure and comprising a radio frequency (RF) manifold and a beam former. An RF signal path through the oxide-bonded wafers comprises a first portion that propagates toward the beam former and a second portion that propagates parallel to the beam former.

Claims

1. An active electronically scanned array (AESA) tile comprising: a radiator structure; and oxide-bonded semiconductor wafers attached to the radiator structure and comprising a low loss glass radio frequency (RF) manifold and a beam former, wherein the RF manifold is not in direct contact with the beam former; wherein an RF signal path through the oxide-bonded semiconductor wafers comprises a first portion that propagates toward the beam former, a second portion that propagates parallel to the beam former, a third portion that propagates away from the beam former, and a fourth portion that extends into the beam former and out of the beam former; wherein the RF signal path moves along three axes, wherein the first portion, the third portion and the fourth portion of the RF signal move in a Z-axis direction, wherein the second portion of the RF signal moves in an X-axis direction, and a fifth portion of the RF signal moves in a Y-axis direction.

2. The AESA tile of claim 1, wherein the oxide-bonded semiconductor wafers are fused silica.

3. The AESA tile of claim 1, wherein the oxide-bonded semiconductor wafers comprise metal posts, and wherein a metal post from one wafer is connected to a metal post of another wafer.

4. The AESA tile of claim 1, wherein the beam former comprises at least one of a phase shifter, an amplifier or an application-specific integrated circuit (ASIC).

5. The AESA tile of claim 1, wherein the beam former is fabricated on silicon germanium (SiGe) wafer.

6. The AESA tile of claim 1, wherein the radiator structure provides radiation shielding for the beam former.

7. The AESA tile of claim 1, wherein the RF manifold propagates RF signals and no DC signals.

8. The AESA tile of claim 1, wherein the beam former includes a redistribution layer to allow for surface mounting to a printed circuit board.

9. The AESA tile of claim 1, wherein power, signal and RF are routed from the PWB through the beam former by a wafer via.

10. The AESA tile of claim 1, where the oxide-bonded semiconductor wafers are made of high resistivity silicon.

11. The AESA tile of claim 1 where the RF signal is routed using at least one of a stripline, a coplanar waveguide (CPW), a buried microstrip and a coaxial RF structure.

12. The AESA tile of claim 1, wherein the tile comprises time delay structures and filtering structures.

13. The AESA tile of claim 1, further comprising active elements, wherein active element spacing fits within Lambda/2 to enable wide scan to 60 degrees.

14. The AESA tile of claim 13, wherein the number of active elements between sixteen to sixty-four active elements.

15. The AESA tile of claim 13, wherein the tiles are scalable to an NN array of active elements where N>1.

16. The AESA tile of claim 1 further comprising one or more time delay structures having a trace length selected to achieve a certain time delay.

17. The AESA tile of claim 1 further comprising a cooling plate that is positioned to cool the beamformer.

18. The AESA tile of claim 1 wherein the oxide-bonded semiconductor wafers are a stack of oxide-bonded wafers that are interconnected using RF direct bond hybridization (RF-DBH) and wafer vias.

19. The AESA tile of claim 1 wherein the fifth portion of the RF signal moves in the Y-axis direction in the RF manifold.

Description

DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a diagram of one example of an array of active electronically scanned array (AESA) disposed on a mobile platform.

(2) FIG. 2 is a diagram of an example of the AESA.

(3) FIG. 3 is a cross-sectional view of an example of the AESA with a tile.

(4) FIG. 4 is a cross-sectional view of an example of two oxide-bonded wafers.

(5) FIG. 5 is a diagram of an example of a radio frequency (RF) manifold.

DETAILED DESCRIPTION

(6) Described herein is a millimeter-wave radio frequency (RF) tile used as an active electronically scanned array (AESA) and scalable to form larger NN AESA, for example. The tile, as described herein, incorporates a low loss glass RF manifold that is wafer level bonded directly to the beamforming circuit and a radiation shielding radiator.

(7) As is understood in the art, higher frequencies require tighter lattice spacing between the active elements, which leaves less room for the active circuitry. This becomes even tighter when lambda/2 (half wavelength at transmitted frequency) spacing is required for a wide scan angle. The tile structures described herein enable signals to traverse a Z-axis using vias, for example, thereby allowing for higher frequencies such as Ka band and above to be achieved. One or more tiles may be mounted to a printed circuit board, which enables scalability. For example, the tile provides high density RF packaging and interconnects. In one example, the tile includes an RF-only manifold in a low-loss fused silica. In one example, the tile provides beam former functionality in silicon germanium (SiGe) and the SiGe beam former may be placed in close proximity to a coolant to provide thermal management. In one example, an RF radiator may also provide shielding of the SiGe beam former, for example, from radiation effects. In other examples, the beam former may be fabricated in other semiconductors such as high resistivity silicon, silicon carbide, gallium arsenide and so forth. In other examples, other functionality may be included in the RF manifold layer such as filtering and time delay. In one example, time delay functionality includes routing longer trace lengths to delay a signal. These other functions may be added into additional wafers incorporated in the stack.

(8) Referring to FIG. 1, an AESA may be used in a number of applications. For example, as shown in FIG. 1, an array 12 of AESA 100 may be used in a mobile environment such as in a mobile platform unit 10. In this example, the AESA 100 are arranged in a 44 array. Though FIG. 1 depicts AESA 100 that are in a shape of a rectangle, the AESA 100 may be constructed to be a circle, triangle or any polygon shape. Also, though the array 12 is in a shape of a square the array may be a rectangle, circle, triangle or any polygon arrangement. Further, the number of AESA 100 may be one to any number of AESA 100.

(9) In other applications, one or more AESA 100 may be used on the side of naval vessels, on ground structures, ground vessels, air vessels, space vessels and so forth. In one particular example, AESA 100 may be placed on a stellar or planetary probe. As will be shown herein, an AESA 100 is a building block for forming an AESA system that is modular and scalar. In one particular example, the AESA 100 is a millimeter-wave AESA.

(10) Referring to FIG. 2, in one particular example, the AESA 100 includes an array of tiles 200 (e.g., a 99 array of tiles 200). The tiles 200 are also known as known good tiles (KGT). The AESA 100 also includes a cooling plate 204 and a printed circuit board (PCB) 206. In one example, each tile 200 is attached to the PCB 206, which is cooled by the cold plate 204. Each tile 200 includes active elements 222 that transmit and receive signals. In one example, the active elements 222 are arranged in an 88 array. As will be further described herein, the tiles 200 are fabricated from a stack of oxide-bonded wafers, which are interconnected using radio frequency direct bond hybridization (RF-DBH) and through wafer vias.

(11) Referring to FIG. 3, the tile 200 includes wafers (e.g., a wafers 304a, a wafer 304b, a wafer 304c and a wafer 304d), a beam former 312 and a radiator/shielding structure 324. The wafers 304a-304d are oxide bonded. For example, an oxide 306a of the wafer 304a is bonded with the oxide 306b of the wafer 304b, an oxide 306c of the wafer 304b is bonded with the oxide 306d of the wafer 304c and an oxide 306e of the wafer 304c is bonded with the oxide 306f of the wafer 304d. Oxide is also used to bond the beam former 312 to the wafer stack (e.g., an oxide 306g on the wafer 304d is bonded with an oxide 306h of the beam former 312).

(12) An RF manifold 320 is disposed within the wafers 304a-304d. In one particular example, the RF manifold is in the middle of the wafers 304a-304d as depicted in FIG. 3, but may be located in other wafers than shown in FIG. 3. The RF manifold 320 functions as an RF combiner/divider. For example, with sixty-four active elements the manifold would be a 64:1 RF combiner/divider. In one example, within the wafers 304a-304d the manifold 320 routes only RF signals and, in particular, there is no routing of DC power or control signals in the wafers 304a-304d. The manifold 320 extends in the XY-Plane (i.e., into the FIG. 3) and an example of the manifold 320 is depicted in the XY plane in FIG. 5. In one example, the manifold 320 includes layers that are made of high resistivity silicon.

(13) In one example, the wafers 304a-304d are fused silica wafers. In one particular example, each silica wafer is 100 microns thick. In one particular example, the fused silica is a low loss fused silica, where k=3.82 and the loss tangent is equal to 0.0007 at 60 GHz. In one example, the wafers 304a-304d may be low loss, high resistivity silicon. In further examples, wafers 304a-304d may be more or less than four wafers.

(14) Vias are used to provide an electrical path through the tile 200. For example, the wafer 304a includes vias (e.g., a via 308a and a via 308b), the wafer 304b includes vias (e.g., a via 308c and a via 308d), the wafer 304c includes vias (e.g., a via 308e, a via 308f, a via 308g, a via 308h, and a via 308i) and the wafer 304d includes vias (e.g., a via 308j, a via 308k, a via 308l, a via 308m, and a via 308n).

(15) Vias may be connected to metal traces which are connected to metal posts. For example, the wafer 304a includes a metal post 313 and a metal trace 314. As further described in FIG. 4, the metal posts provide electrical connectivity from one wafer to another wafer.

(16) The oxide-bonded wafers 304a-304d include metallization layers used for electrical interconnections. In one example, metal layer 310a provides an interconnect between via 308j and via 308k. In another example, the oxide 306h includes metal layer interconnect 310b providing an electrical connection between the via 308f, the via 308g and the via 308h. In a further example, the oxide 306h includes an interconnect 310c providing an electrical connection between the via 308m and the via 308n. The via 308 connects the metal on both sides of a wafer 304 and the interconnect between metal pads on the wafer are made during oxide bonding with the metal post shown in metal post 313.

(17) The beam former 312 includes at least one control application-specific integrated circuit ASIC (e.g., an ASIC 340), amplifiers (e.g., an amplifier 344a and an amplifier 344b) and phase shifters (e.g., a phase shifter 346a and a phase shifter 346b). In one example, the beam former 312 is fabricated on a silicon germanium (SiGe) wafer. In other examples, the beam former 312 provides RF attenuation and RF switches.

(18) The beam former 312 also includes backside redistribution layers (RDL) (e.g., RDLs 348a) which includes interconnect pads, 348b to enable attachment to the PCB 206 using standard surface mount technology. The beam former 312 is attached to the PCB 206 by solder bumps (e.g., solder bumps 350a-350e). In one example, the solder bump 350a carries control signals, the solder bumps 350b, 350d are attached to ground, the solder bump 350c carries RF signals and the solder bump 350e carries power.

(19) The radiator/shielding structure 324 is bonded to the wafers by a metal interconnect. In one example, the interconnect may be a solder bumps. In another example, it could be an indium bump. For example, the radiator/shielding structure 324 is bonded to the vias 308a of the wafer 304a by a solder bumps 380a and the radiator/shielding structure 324 is bonded to the vias 308b of the wafer 304a by a solder bumps 380a. In one example, the radiator/shielding structure 324 is designed to propagate an RF signal through the radiator and provide a radiation shield for the beam former 312. In one example, the radiator is made of a metal with low coefficient of expansion like invar to lessen the stress of connection to the wafer stack and thick enough to provide the correct amount of radiation shielding.

(20) In one particular example, an RF signal path 370 starts at the radiator/shielding structure 324 and continues through connection 380b, the via 308b of the wafer 304a, through the via 308d of the wafer 304b, through the via 308i of the wafer 304c and through the via 308n of the wafer 304d. The RF signal path 370 continues in the beam former 312 by going through the amp 344b and the phase shifter 346. The RF signal path 370 continues back away from the beam former 312 and into the wafers 304c, 304d by going through the via 308m of the wafer 304d, through the via 308h of the wafer 304c. The RF signal path 370 continues through the interconnect 310b through the via 308g of the wafer 304c, through the via 308i of the wafer 304d. The RF signal path 370 propagates back into the beam former 312 and through the via 304c to the PCB 206 through bump 350c.

(21) The RF signal path 370 moves in at least two axes within the wafers. For example, the RF signal path 370 moves along two axes (e.g., it moves along the X-axis and the Z-axis (i.e., in an X-Z plane)). In other examples, the RF signal path 370 may also move in the Y-axis (not shown in FIG. 3, but depicted in FIG. 5). In other examples, the RF signal path may flow in opposite direction to the RF signal path 370. Other RF signal paths are not limited by the RF signal path 370. That is, other RF signal paths and combinations are possible and that the RF signal path 370 is just one example of the many RF signal paths possible in FIG. 3.

(22) FIG. 4 depicts one example of two wafers that are oxide bonded, for example, in a manner that the oxide-bonded wafers 304a-304d are configured. For example, an oxide 406a of a wafer 404a is bonded to an oxide 406b of a wafer 404b. In one example, the oxide bond is a molecular bond formed at room temperature. The DBH includes metal posts such as a post 412a of the wafer 404a bonded to a post 412c of the wafer 404b and a post 412b of the wafer 404a bonded to a post 412d of the wafer 404b. In one example, the posts 412a-412d are made of metal. In one particular example, the posts 412a-412d are copper posts. In another particular example, the posts 412a-412d are nickel posts. In a further particular example, the posts 412a-412d are aluminum posts. In one example the posts 412a-412d have less than 10 microns of pitch capability.

(23) Posts may be connected by a metal trace layer (e.g., post 412c is connected to a post 412d by a metal trace layer 414). The metal trace layer may be connected to vias (e.g., the metal trace layer 414 is connected to the via 408). In one example, the via 408 may be about 25 microns in diameter. In one example, the via 408 may be a copper via.

(24) FIG. 5 depicts an example of the RF manifold 320, an RF manifold 520 in an X-Y plane, for example. In this example, the RF manifold 520 is a 16:1 RF combiner/divider for sixteen elements (e.g., active elements 522a-522p). In one example, the RF manifold 520 is fabricated in wafers 304a-304d that are low loss, high resistivity silicon.

(25) The processes described herein are not limited to the specific embodiments described. Elements of different embodiments described herein may be combined to form other embodiments not specifically set forth above. Other embodiments not specifically described herein are also within the scope of the following claims.