Chemical-mechanical polishing abrasive pad conditioner and method for manufacturing same

Abstract

The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plurality of bumps; and a diamond film located on the intermediate layer, and forming a plurality of abrasive projections corresponding to the bumps of the intermediate layer; in this case, a top surface of the abrasive projections is formed with a patterned configuration and the top surface is provided with a center line average roughness (Ra) between 2 and 20.

Claims

1. A CMP abrasive pad conditioner, comprising: a bottom substrate; an intermediate layer, located on said bottom substrate, said intermediate layer including a hollow portion and an annular portion surrounding said hollow portion, said annular portion being provided with a plurality of bumps; and a diamond film, located on said intermediate layer, and forming a plurality of abrasive projections corresponding to said plurality of bumps of said intermediate layer; wherein a top surface of each of said plurality of abrasive projections is formed with a patterned configuration and provided with a center line average roughness between 2 and 20.

2. The CMP abrasive pad conditioner according to claim 1, wherein said patterned configuration includes a plurality of solid figures arranged regularly or irregularly.

3. The CMP abrasive pad conditioner according to claim 2, wherein each of said plurality of solid figures is selected from the group consisting of triangular pyramid, quadrangular pyramid, pentagonal pyramid, hexagonal pyramid, heptagonal pyramid, octagonal pyramid, triangular prism, quadrangular prism, pentagonal prism, hexagonal prism, heptagonal prism, octagonal prism, circular cone, circular cylinder, elliptic cone, elliptic circle cylinder and the combination thereof.

4. The CMP abrasive pad conditioner according to claim 2, wherein there is a first interval between the center point of one of said plurality of solid figures and the center point of the adjacent solid figure, said first interval being longer than a width of said solid figure, and said first interval being 0.5 to 8.3 times as long as said width of said solid figure.

5. The CMP abrasive pad conditioner according to claim 4, wherein said first interval is in a range of 50 m to 250 m.

6. The CMP abrasive pad conditioner according to claim 2, wherein each of said plurality of solid figures is provided with a width between 30 m and 100 m.

7. The CMP abrasive pad conditioner according to claim 2, wherein a number of said plurality of solid figures included on each of said plurality of abrasive projections per square millimeter is in a range of 10 to 250.

8. The CMP abrasive pad conditioner according to claim 2, wherein said plurality of solid figures are arranged to form a plurality of solid figure aggregation portions on each of said plurality of abrasive projections.

9. The CMP abrasive pad conditioner according to claim 8, wherein at least one flat region is provided between one of said plurality of solid figure aggregation portions and one adjacent solid figure aggregation portion, without said plurality of abrasive projections being included in said flat region.

10. The CMP abrasive pad conditioner according to claim 1, wherein said intermediate layer is made of conducting silicon carbide or non-conducting silicon carbide.

11. The CMP abrasive pad conditioner according to claim 1, wherein each of said plurality of abrasive projections is presented as an arc with respect to a radial direction of said intermediate layer.

12. The CMP abrasive pad conditioner according to claim 1, wherein said plurality of bumps are arranged on said annular portion to form projecting rings, and said plurality of bumps of adjacent projecting rings are offset with respect to each other.

13. The CMP abrasive pad conditioner according to claim 1, wherein said plurality of bumps of said annular portion are formed through energy machining or die casting.

14. A method for manufacturing CMP abrasive pad conditioner, comprising: providing a bottom substrate; locating an intermediate layer, said intermediate layer including a hollow portion and an annular portion surrounding said hollow portion, said annular portion being formed thereon with a plurality of bumps; forming a diamond film on said intermediate layer, and forming a plurality of abrasive projections by conforming said diamond film to said plurality of bumps of said intermediate layer, a top surface of each of said plurality of abrasive projections being formed with a patterned configuration and provided with a center line average roughness between 2 and 20; and fixing said intermediate layer at one side thereof to said bottom substrate.

15. The manufacturing method according to claim 14, wherein said intermediate layer is fixed to said bottom substrate via a bonding layer.

16. The manufacturing method according to claim 14, wherein said plurality of bumps of said annular portion are formed through energy machining or die casting.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a top view of a CMP abrasive pad conditioner of a first embodiment of the present invention.

(2) FIG. 2A is a cross-section diagram along A-A of FIG. 1.

(3) FIG. 2B is a cross-section diagram along B-B of FIG. 1.

(4) FIG. 3 is a diagram of patterned configuration of a working face (top surface) of FIG. 1.

(5) FIG. 4 is a top view overlooking from a working surface (top surface) of FIG. 1.

(6) FIG. 5A is a top view of a CMP abrasive pad conditioner of a second embodiment of the present invention.

(7) FIG. 5B is a cross-section diagram along C-C of FIG. 5A.

(8) FIG. 6 is a top view of a CMP abrasive pad conditioner in another aspect of the second embodiment of the present invention.

(9) FIGS. 7A to 7B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(10) FIGS. 8A to 8B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(11) FIGS. 9A to 9B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(12) FIGS. 10A to 10B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(13) FIGS. 11A to 11B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(14) FIGS. 12A to 12B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(15) FIGS. 13A to 13B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

(16) FIGS. 14A to 14B are photographs, taken by scanning electron microscope (SEM), of the patterned configuration in another aspect of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(17) The detailed description and technical content of the present invention will now be described in accompany with drawings as follows.

First Embodiment

(18) Referring to FIG. 1, together with FIGS. 2A and 2B, there are shown a top view, a cross-section diagram along A-A, and a cross-section diagram along B-B, respectively, of a chemical-mechanical polishing (CMP) abrasive pad conditioner 1 of a first embodiment of the present invention.

(19) The CMP abrasive pad conditioner 1 of the present invention mainly comprises a bottom substrate 10, an intermediate layer 20, and a diamond film 30. In this connection, the intermediate layer 20 is located on the bottom substrate 10, while the intermediate layer 20 is clad in the diamond film 30. In this embodiment, a method for manufacturing the CMP abrasive pad conditioner 1 including:

(20) (S1) providing a bottom substrate 10;

(21) (S2) locating an intermediate layer 20, the intermediate layer 20 including a hollow portion 20a and an annular portion 20b surrounding the hollow portion 20a, the annular portion 20b being provided with a plurality of bumps 201 through energy machining (such as, electric discharge machining, laser machining, for example) or die casting, in which, for instance, the electric discharge machining is used cooperatively when a conducting material is used as the intermediate layer 20, while the laser machining is used cooperatively when a non-conducting material is used as the intermediate layer 20 so as to produce the plurality of bumps 201 on the annular portion 20b, and additionally, die casting may be further used to obtain the aforementioned configuration directly in the process of formation, in which, for instance, powders are pressed to be an expected shape and then formed by sintering;

(22) (S3) forming a diamond film 30 on the intermediate layer 20, and forming a plurality of abrasive projections 301 by conforming the diamond film 30 to the plurality of bumps 201 of the intermediate layer 20, a top surface 3011 of each of the plurality of abrasive projections 301 being formed with a patterned configuration and provided with a center line average roughness (Ra) between 2 and 20; and

(23) (S4) fixing the intermediate layer 20 at one side thereof to the bottom substrate 10.

(24) The configuration of the CMP abrasive pad conditioner 1 will be introduced in more detail hereinafter.

(25) The bottom substrate 10 may be either a planar substrate, or a non-planar substrate provided with a groove accommodating the intermediate layer 20. The material suitable for the bottom substrate 10 of the present invention may be, for example, stainless steel, metallic material, high-molecular material, ceramic material or the combination thereof.

(26) The intermediate layer 20 is located on the bottom substrate 10, and material forming the intermediate layer 20 may be conducting silicon carbide or non-conducting silicon carbide. In this embodiment, the intermediate layer 20 includes a hollow portion 20a and an annular portion 20b surrounding the hollow portion 20a. The annular portion 20b is engraved by laser machining to be provided with a plurality of bumps 201. The plurality of bumps 201 are arranged along the annular portion 20b to form a projecting ring, and the plurality of bumps 201 may be arranged to form at least one circle of the projecting ring, such as 1 to 20 circles of the projecting rings, preferably 2 to 20 circles of the projecting rings, for example, centered on the hollow portion 20a depending on the situation. In this embodiment, two circles of the projecting rings are taken for illustration. In this case, the plurality of bumps 201 of adjacent projecting rings are offset with respect to each other. The shape of each of the plurality of bumps 201 may be, for example, trapezoid, sector, or other shapes designed as required, without special limitation. In this embodiment, the plurality of bumps 201 are formed by engraving through laser machining, and the top surface of each of the plurality of bumps 201 may be also engraved through laser machining to be provided with a patterned configuration. In another embodiment, however, it is also possible to form the plurality of bumps 201 and the patterned configuration through electric discharge machining or die casting, for example, without special limitation in the present invention.

(27) In this embodiment, the diamond film 30 is formed by chemical vapor deposition (CVD). The CVD may be, for example, filament CVD, plasma-enhanced CVT) (PECVD), microwave plasma CVD (MPCVD), or the like. A surface conforming to the plurality of bumps 201 of the intermediate layer 20 so as to cover the intermediate layer 20 is formed with a plurality of abrasive projections 301. In this embodiment, each of the plurality of abrasive projections 301 is presented as an arc with respect to a radial direction of the intermediate layer 20, as drawn in FIG. 1.

(28) The plurality of abrasive projections 301 projected out of the diamond film 30 are also allowed to conform to the plurality of bumps 201, because the diamond film 30 is formed in conformation with the shape of the intermediate layer 20. Thus, a top surface 3011 of each of the plurality of abrasive projections 301 is formed with a patterned configuration corresponding to the plurality of bumps 201. The patterned configuration includes a plurality of solid figures arranged regularly or irregularly. More specifically, the patterned configuration may be a plurality of regularly or irregularly arranged triangular pyramids, quadrangular pyramids, pentagonal pyramids, hexagonal pyramids, heptagonal pyramids, octagonal pyramids, triangular prisms, quadrangular prisms, pentagonal prisms, hexagonal prisms, heptagonal prisms, octagonal prisms, circular cones, circular cylinders, elliptic cones, elliptic circle cylinders or the combination thereof. The top surface 3011 of the abrasive projection 301 is endowed with a center line average roughness (Ra) between 2 and 20 by virtue of the patterned configuration.

(29) In this embodiment, the bottom substrate 10 and the intermediate layer 20 are bound together via a bonding layer 40. Any material with adhesion, such as resin, for example, may be selected for the bonding layer 40. In another embodiment, it is also possible to fix the intermediate layer 20 to the bottom substrate 10 via brazing or mechanical combination.

(30) Referring to FIG. 4, the plurality of abrasive projections 301 and a chip removing channel 302 formed between two abrasive projections 301 may be seen, when the CMP abrasive pad conditioner 1 is overlooked from a working face.

(31) As conforming to the shape of the intermediate layer 20, the top surface 3011 of each of the plurality of abrasive projections 301 of the diamond film 30 is formed thereon with the patterned configuration by virtue of a plurality of solid figures 3012 arranged regularly or irregularly. As described above, the plurality of solid figures 3012 may be selected from the group consisting of triangular pyramid, quadrangular pyramid, pentagonal pyramid, hexagonal pyramid, heptagonal pyramid, octagonal pyramid, triangular prism, quadrangular prism, pentagonal prism, hexagonal prism, heptagonal prism, octagonal prism, circular cone, circular cylinder, elliptic cone, elliptic circle cylinder and the combination thereof.

(32) Referring to FIG. 3 for the purpose of detailed description, a regular hexagonal prism is taken as an example for the plurality of solid FIGS. 3012 of the present invention. There is a first interval D1 between the center point of one of the plurality of solid figure 3012 and the center point of adjacent solid figure 3012.

(33) In this embodiment, the first interval D1 is longer than a width D0 of the solid figure 3012, and thither, the first interval D1 is 0.5 to 8.3 times as long as the width D0 of the solid figure 3012. In this embodiment, the first interval D1 may be in the range of 50 m to 250 m, while the width D0 of the solid figure 3012 may be in the range of 30 m to 100 m. However, the first interval D1 and the width D0 of the solid figure 3012 may be selected appropriately as required by those skilled in the art without special limitation in the present invention, only if the first interval D1 is longer than a width D0 of the solid figure 3012, and further, the first interval is 0.5 to 8.3 times as long as the width D0 of the solid figure 3012 described above is satisfied. For instance, in a non-limiting embodiment, the first interval D1 may be 200 m, while the width D0 may be 80 m, such that the first interval D1 is 2.5 times as long as the width D0. In another embodiment, the first interval D1 may be 65 m, while the width D0 may be 30 m, in such a way that the first interval D1 is 2.17 times as long as the width D0.

(34) In this embodiment, the number of the plurality of solid figures 3012 included on each of the plurality of abrasive projections 301 per square millimeter (mm.sup.2) is in the range of 10 to 250, without special limitation in respect of the arrangement of the plurality of solid figures 3012 on the top surface 3011. Referring to FIG. 4, for instance, two solid figure aggregation portions 303 are formed to be arranged on the top surface 3011 of each of the plurality of abrasive projections 301, with at least one flat region 304, in which no abrasive projection 301 is included, remained between the solid figure aggregation portions 303. In another embodiment, however, more than two solid figure aggregation portions 303 may be provided on the top surface 3011. In a further embodiment, nevertheless, the plurality of solid figures 3012 are not aggregated to form the solid figure aggregation portion 303, but evenly formed on the top surface 3011 instead.

Second Embodiment

(35) The CMP abrasive pact conditioner 1 of a second embodiment of the present invention is illustrated in FIG. 5A. In the second embodiment, the configuration of the CMP abrasive pad conditioner 1 is substantially the same as that in the above first embodiment, except for further including a plurality of abrasive units 50.

(36) Proceeding to FIG. 5B, which is a cross-section diagram along C-C of FIG. 5A, each of the plurality of abrasive units 50 in the CMP abrasive pad conditioner 1 of the second embodiment of the present invention includes a carrying post 51, a polishing particle 52 located on the carrying post 51, and an abrasive bonding layer 53 used for binding the carrying post 51 and the polishing particle 52. In the second embodiment, the plurality of abrasive units 50 are located on the bottom substrate 10 in a place corresponding to the hollow portion 20a of the intermediate layer 20.

(37) In another embodiment, referring to FIG. 6, there is shown a top view of the CMP abrasive pad conditioner 1 in another aspect of the second embodiment of the present invention. Only difference between the CMP abrasive pad conditioner 1 in this aspect and the CMP abrasive pad conditioner 1 drawn in FIG. 5A is the location of the plurality of abrasive units 50, in which the plurality of abrasive units 50 in the aspect shown in FIG. 6 are located on a peripheral portion 10a of the bottom substrate 10 (referring to FIG. 2B together).

(38) FIG. 7A, FIG. 7B, FIG. 8A, FIG. 8B, FIG. 9A, FIG. 9B, FIG. 10A, FIG. 10B, FIG. 11 FIG. 11B, FIG. 12A, FIG. 12B, FIG. 13A, FIG. 13B FIG. 14A and FIG. 14B are photographs, taken by scanning electron microscope (SEM), of the patterned configurations in the present invention in other aspects, including regular or irregular hexagon, regular or irregular pentagon, regular or irregular tetragon and etc., without special limitation in the present invention, only if a top surface 3011 of each of the plurality of abrasive projections 301 is provided with a patterned configuration in such a way that the top surface 3011 is provided with a center line average roughness (Ra) between 2 and 20.

(39) For instance, in the aspect shown in FIG. 7A and FIG. 7B, the top surface includes the patterned configuration comprising a plurality of regularly arranged solid figures, such that the top surface is provided with a center line average roughness (Ra) of 4. In this aspect, moreover, the width of the solid figures is 80 m, while the distance between center points of two adjacent solid figures (i.e., the first interval) is 200 m, in such a way that the first interval is 2.5 times as long as the width.

(40) In the aspect shown in FIG. 8A and FIG. 8B, the top surface includes the patterned configuration comprising a plurality of regularly arranged quadrangular prisms, such that the top surface is provided with a center line average roughness (Ra) of 20. In this aspect, moreover, the width of the quadrangular prism is 70 m, while the distance between center points of two adjacent quadrangular prisms (i.e., the first interval) is 120 m, in such a way that the first interval is 1.71 times as long as the width.

(41) In the aspect shown in FIG. 9A and FIG. 9B, the top surface includes the patterned configuration comprising a plurality of regularly arranged pentagonal prisms, such that the top surface is provided with a center line average roughness (Ra) of 20. In this aspect, moreover, the width of the pentagonal prism is 70 m, while the distance between center points of two adjacent pentagonal prisms (i.e., the first interval) is 170 m, in such a way that the first interval is 2.43 times as long as the width.

(42) In the aspect shown in FIG. 10A and FIG. 10B, the top surface includes the patterned configuration comprising a plurality of regularly arranged solid figures, such that the top surface is provided with a center line average roughness (Ra) of 15. In this aspect, moreover, the width of the solid figure is 70 m, while the distance between center points of two adjacent solid figures (i.e., the first interval) is 170 m, in such a way that the first interval is 2.43 times as long as the width.

(43) In the aspect shown in FIG. 11A and FIG. 11B, the top surface includes the patterned configuration comprising a plurality of regularly arranged solid figures, such that the top surface is provided with a center line average roughness (Ra) of 12. In this aspect, moreover, the width of the solid figure is 70 m, while the distance between center points of two adjacent solid figures (i.e., the first interval) is 170 m, in such a way that the first interval is 2.43 times as long as the width.

(44) In the aspect shown in FIG. 12A and FIG. 12B the top surface includes the patterned configuration comprising a plurality of regularly arranged solid figures, such that the top surface is provided with a center line average roughness (Ra) of 8. In this aspect, moreover, the width of the solid figure is 70 m, while the distance between center points of two adjacent solid figures (i.e., the first interval) is 170 m, in such a way that the first interval is 2.43 times as long as the width.

(45) In the aspect shown in FIG. 13A and FIG. 13B, the top surface includes the patterned configuration comprising a plurality of regularly arranged quadrangular prisms, such that the top surface is provided with a center line average roughness (Ra) of 9. In this aspect, moreover, the width of the quadrangular prism is 50 m, while the distance between center points of two adjacent quadrangular prisms (i.e., the first interval) is 100 m, in such a way that the first interval is 2 times as long as the width.

(46) In the aspect shown in FIG. 14A and FIG. 14B, the top surface includes the patterned configuration comprising a plurality of regularly arranged solid figures, such that the top surface is provided with a center line average roughness (Ra) of 9. In this aspect, moreover, the width of the solid figure is 30 m, while the distance between center points of two adjacent solid figures (i.e., the first interval) is 65 m, in such a way that the first interval is 2.17 times as long as the width.

(47) To sum up, the CMP abrasive pad conditioner 1 of the present invention is provided on the top surface 3011 thereof with a patterned configuration, so as to increase a center line average roughness (Ra) of the top surface 3011. In comparison with conventional technology, therefore, uniformity of the CMP abrasive pad conditioner 1 of the present invention is enhanced. Furthermore, when the CMP abrasive pad conditioner 1 with good uniformity is used for conditioning, even fragments remained in pores may be also removed successfully. Thereby, removing capability may be enhanced. The above merits are summarized that the service life of the CMP conditioner of the present invention will be extended.