SEMICONDUCTOR LASER

Abstract

The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25). Said current protection region has, in the direction running perpendicularly to the associated facets (25), an extension of at least 0.5 m and at most 100 m, and additionally of at least 20% of a resonator length for the laser radiation.

Claims

1. Semiconductor laser comprising a semiconductor layer sequence which has an n-conducting n-region, a p-conducting p-region and an intermediate active zone for generating laser radiation, a p-contact layer which is transmissive to the laser radiation and which is made of a transparent conductive oxide and which is designed for impressing current directly into the p-region, and an electrically conductive and metallic p-contact structure which is located directly on the p-contact layer, wherein the p-contact layer is part of a cladding layer for guiding the laser radiation so that the laser radiation intentionally enters the p-contact layer during operation of the semiconductor laser, the semiconductor layer sequence has two facets which form resonator end faces for the laser radiation, in at least one current protection region directly on at least one of the facets a current impression into the p-region is suppressed, in the direction perpendicular to the associated facet the current protection region has an extent of at least 0.5 m and of at most 100 m and additionally of at most 20% of a resonator length for the laser radiation, and in at least one current protection region the p-region has a greater thickness than in remaining regions and the p-contact layer is removed from the current protection region, or in at least one current protection region the p-contact layer is only partially removed, so that in said current protection region an effective refractive index for the laser radiation in the p-contact layer decreases in the direction towards the associated facet.

2. The semiconductor laser according to claim 1, in which the p-contact layer and the p-contact structure terminate flush with at least one of the facets in the direction parallel to the active zone.

3. The semiconductor laser according to claim 1, in which in at least one current protection region there is an electrical insulator layer between the p-contact layer and the p-region, wherein the insulator layer has a constant thickness, which is at most 1 m.

4. The semiconductor laser according to claim 1, in which in at least one current protection region the p-region is modified directly on the p-contact layer, so that in this current protection region current impression into the p-region is prevented or is reduced by at least a factor of 10.

5. The semiconductor laser according to claim 1, in which in at least one current protection region the p-contact layer is directly connected to the p-region, so that in this current protection region current impression into the p-region is prevented or is reduced by at least a factor of 10.

6. The semiconductor laser according to claim 1, in which the p-contact layer and the p-contact structure are removed in at least one current protection region.

7. The semiconductor laser according to claim 1, in which the p-contact layer is removed in at least one current protection region and in the current protection region at least one additional layer is applied directly to the p-region, wherein the additional layer is electrically insulating.

8. The semiconductor laser according to claim 7, in which the additional layer has a higher specific thermal conductivity than the p-region.

9. The semiconductor laser according to claim 1, in which in at least one current protection region the p-region has a greater thickness than in remaining regions and the p-contact layer is removed from the current protection region, wherein the p-contact layer, in the direction away from the active zone, terminates flush with the p-region which is located in the current protection region.

10. The semiconductor laser according to claim 1, in which in at least one current protection region the p-contact layer is only partially removed, so that in the current protection region an effective refractive index for the laser radiation in the p-contact layer decreases in the direction towards the associated facet and in the direction away from the active zone, wherein the p-contact layer is completely removed directly at the associated facet.

11. The semiconductor laser according to claim 1, in which in at least one current protection region the p-contact layer is partially removed, and regions from which the p-contact layer has been removed are filled with an electrically insulating protective material which is transparent to the laser radiation.

12. The semiconductor laser according to claim 1, in which in at least one current protection region a material of the p-contact layer is mixed with a transparent and electrically insulating blend material, wherein a proportion of the blend material increases gradually or stepwise in the direction towards the associated facet or in the direction away from the active zone.

13. The semiconductor laser according to at least claim 7, in which the p-contact layer is completely removed from at least one current protection region, wherein the p-contact structure completely covers a side face of the p-contact layer, wherein the additional layer is additionally applied in the current protection region so that in the direction parallel to the active zone the p-contact layer, the p-contact structure and the additional layer follow one another.

14. The semiconductor laser according to claim 7, in which in at least one current protection region the additional layer is applied both in the current protection region and on the associated facet.

15. The semiconductor laser according to claim 7, in which close to at least one current protection region the additional layer is applied to the p-contact layer and is in direct contact with the p-contact structure.

16. The semiconductor laser according to claim 7, in which in at least one current protection region the additional layer is partially or completely covered by the p-contact structure, wherein a thickness of the additional layer is equal to a thickness of the p-contact layer.

17. The semiconductor laser according to claim 7, in which in at least one current protection region the additional layer is spaced apart from the p-contact layer in the direction parallel to the active zone.

18. Semiconductor laser comprising a semiconductor layer sequence which has an n-conducting n-region, a p-conducting p-region and an intermediate active zone for generating laser radiation, a p-contact layer which is transmissive to the laser radiation and which is made of a transparent conductive oxide and which is designed for impressing current directly into the p-region, and an electrically conductive and metallic p-contact structure which is located directly on the p-contact layer, wherein the p-contact layer is part of a cladding layer for guiding the laser radiation so that the laser radiation intentionally enters the p-contact layer during operation of the semiconductor laser, the semiconductor layer sequence has two facets which form resonator end faces for the laser radiation, in at least one current protection region directly on at least one of the facets a current impression into the p-region is suppressed, and in the direction perpendicular to the associated facet the current protection region has an extent of at least 0.5 m and of at most 100 m and additionally of at most 20% of a resonator length for the laser radiation.

Description

[0041] FIGS. 1 to 18 show schematic sectional representations of exemplary embodiments of semiconductor lasers described here, and

[0042] FIG. 19 shows a schematic sectional illustration of a modification of a semiconductor laser.

[0043] FIG. 1 shows an exemplary embodiment of a semiconductor laser 1. A semiconductor layer sequence 2 is arranged on a substrate 7. The semiconductor layer sequence 2 has an n-conducting n-region 21, an active zone 22 and a p-conducting p-region 23. The n-region 21, the active zone 22 and the p-region 23 follow one another directly in the direction away from the substrate 7.

[0044] A current impression into the semiconductor layer sequence 2 takes place on the one hand from the direction of the substrate 7 and/or from the n-region 21 and on the other hand from a p-contact layer 3 and a p-contact structure 4. The p-contact structure 4 is formed from at least one metal. In particular, the semiconductor laser 1 can be electrically contacted externally via the p-contact structure 4, for example by means of soldering or via a bonding wire. The p-contact layer 3 is a transparent conductive layer, in particular of ITO, In.sub.2O.sub.3, SnO.sub.2 or ZnO or combinations thereof.

[0045] The p-contact layer 3 is part of a cladding layer of the semiconductor laser 1. Accordingly, intentionally a finite intensity I of a laser radiation generated in the active zone 22 is still present in the p-contact layer 3. For example, a wave guide is essentially limited to the active zone 22 and cladding layers for wave guiding are formed, on the one hand, by the n-region 21 and, on the other hand, by the p-region 23 together with the p-contact layer 3.

[0046] In the direction parallel to the active zone 22, the semiconductor layer sequence 2 is delimited by a facet 25. A reflection or a coupling-out of the generated laser radiation takes place at the facet 25. Accordingly, a highly reflective or anti-reflective layer is preferably applied to the facet 25, not shown. In all exemplary embodiments, a passivation layer (not shown) is furthermore preferably located on the semiconductor layer sequence 2.

[0047] Close to the facet 25, an insulator layer 6 is located in a current protection region 5 directly on the p-region 23 and below the p-contact layer 3. The insulator layer 6 prevents current from being impressed from the p-contact layer 3 into the p-region 23 directly at the facet 25. In the direction away from the facet 25, the current protection region 5 preferably has an extent of 5 m to 40 m or of 10 m to 20 m.

[0048] As in all other exemplary embodiments, the p-region 23, together with the p-contact layer 3, has a sufficient thickness in order to keep the laser radiation away from the metallic and thus comparatively strongly absorbing p-contact structure 4. In other words, the intensity I on the contact structure 4 is negligible, in contrast to an intensity in the p-contact layer 3 itself. A thickness of the preferably uniformly thick p-contact layer 3 is, for example, at least 5 nm or 50 nm or 100 nm and/or at most 1 m or 0.5 m or 250 nm, for example between 100 nm and 250 nm inclusive. By using the p-contact layer 3 as part of a cladding layer, the remaining p-region 23 can be designed relatively thin. This makes it possible to reduce a forward voltage of the semiconductor laser 1.

[0049] In the other exemplary embodiments, a profile of the intensity I and the substrate 7 are not shown in the drawings. However, in this regard, the same as explained in conjunction with FIG. 1 applies in the other exemplary embodiments, unless indicated otherwise.

[0050] In the exemplary embodiment of FIG. 2, the current protection region 5 is formed by a local modification 61 of the p-region 23. By way of example, a contact resistance between the semiconductor layer sequence 2 and the p-contact layer 3 is locally increased, for example by means of back-sputtering, etching or plasma damage of the p-region 23, so that no current or substantially no current is impressed into the semiconductor layer sequence 2 in the current protection region 5.

[0051] In the exemplary embodiment of FIG. 3, in the current protection region 5 a modification 62 in the p-contact layer 3 itself is formed. For example, the p-contact layer 3 is subjected to a temperature treatment in the modification 62, in particular a heat treatment, so that a contact resistance towards the p-region 23 is increased or such that an electrical conductivity in the modification 62 is reduced relative to remaining regions of the p-contact layer 3.

[0052] In the exemplary embodiments of FIGS. 1 to 3, both the p-contact layer 3 and the p-contact structure 4 terminate flush with the facet 25 on the semiconductor layer sequence 2. In the exemplary embodiment of FIG. 4, on the other hand, both the p-contact structure 4 and the p-contact layer 3 are completely removed from the current protection region 5.

[0053] In the exemplary embodiment of FIG. 5, an additional layer 63 is applied in the current protection region 5. The additional layer 63 is preferably produced from a material which is transparent to the laser radiation and has a comparatively low refractive index. It is likewise possible for the additional layer 63 to have a refractive index which deviates from a refractive index of the contact structure 3 only by at most 0.2 or 0.1 or 0.05. By means of the additional layer, a wave guiding of the laser radiation in the region of the facet 25 is possible.

[0054] The additional layer 63 can have a thickness which is greater than the thickness of the p-contact layer 3. Alternatively, it is possible that the thickness of the additional layer 63 is equal to or even smaller than the thickness of the p-contact layer 3. For example, the additional layer 63 is made of an electrically poorly conductive material such as Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, Ta.sub.2O.sub.5, HfO.sub.2, Si.sub.3N.sub.4 or AlN.

[0055] Alternatively, it is possible for the additional layer 63 to be formed from an electrically non-conductive, but thermally highly conductive material, in order to ensure a thermal connection of the region close to the facet 25 to the thermally highly conductive p-contact structure 4. Materials for the additional layer 63 are then, in particular, diamond-like carbon, SiC or AlN. In this case, a specific thermal conductivity of the material for the additional layer 63 is preferably at least 10 W/m.Math.K or 50 W/m.Math.K or 100 W/m.Math.K.

[0056] In the next exemplary embodiment, see FIG. 6, the p-region 23 is structured. Outside the current protection region 5, a thickness of the p-region 23 is reduced. Thus, a recess is formed in the p-region 23 outside the current protection region 5. A depth of this recess is preferably at least 10 nm or 50 nm or 100 nm and/or at most 1 m or 0.5 m or 250 nm. This recess is completely or partially filled with the p-contact layer 3.

[0057] According to FIG. 6, in the current protection region 5 the p-contact layer 3 terminates flush with the p-region 23 in the direction away from the active zone 22. Alternatively, in the recess the p-contact layer 3 can have a smaller or a greater thickness and can thus project from the p-region 23 or vice versa.

[0058] According to FIG. 7, in the current protection region 5 the p-contact layer 3 becomes continuously thinner towards the facet 25. As a result, a gradual transition of the refractive index for the laser radiation to the facet 25 can be achieved, as a result of which optical losses can be reduced. A region directly at the facet 25 is preferably completely free of the p-contact layer 3. Unlike shown, the p-contact layer 3 can narrow towards the facet 25 not only linearly but also in a curved manner.

[0059] By means of an internal structuring of the p-contact layer 3, in the direction away from the active zone it is possible that the refractive index decreases in the current protection region. This is possible, for example, by means of recesses in the p-contact layer 3, the volume of which increases in the direction away from the active zone 22.

[0060] In the exemplary embodiment of FIG. 8, the region removed from the p-contact layer 3 is filled with a protective material 64, so that in total a layer with a constant layer thickness results, which extends as far as the facet 25. The same materials as used for the insulator layer 6 can be used for the protective material 64, which can in turn be formed from the same materials as the additional layer 63.

[0061] In the exemplary embodiment of FIG. 9, in the current protection region 5 the material of the p-contact layer 3 is mixed with a blend material 65. In this case, a proportion of the blend material 65 increases monotonically and gradually in the direction towards the facet 25. For example, in the direction towards the facet 25 portions of In, Sn, N, O and/or Zn can be varied, in particular a composition of ITO.

[0062] In the exemplary embodiment of FIG. 10, the side face 34 of the p-contact layer 3 is completely covered by the p-contact structure 4. Thus, the p-contact structure 4 is L-shaped when viewed in cross-section. For example, during production of the facets 25 or in other processing steps, it is thereby possible that the metallic p-contact structure 4 protects the p-contact layer 3. Optionally, the additional layer 63 is again present, which directly adjoins the p-contact structure 4 in the direction away from the p-contact layer.

[0063] In the exemplary embodiment of FIG. 11, the additional layer 63 is mounted both as an extension of the p-contact layer 3 and on the facet 25. In this case, the additional layer 63 is preferably embodied as an antireflection layer or as a highly reflective layer for the laser radiation generated in the active zone 22. In this case, a thickness of the additional layer 63 at the facet 25 can be equal to a thickness at the p-region 23, as an extension of the p-contact layer 3. Likewise, the thicknesses at the different legs of the L-shaped additional layer 63 viewed in cross section can be different from one another. It is likewise possible for the facet 25 to be covered only partially by the additional layer 63, unlike in FIG. 11. Furthermore, in contrast to the illustration in FIG. 11, the protective additional layer 63 can partially cover the p-type contact structure 4.

[0064] In the exemplary embodiment of FIG. 12, the additional layer 63 terminates flush with the p-contact layer 3 in the direction away from the active zone. The p-contact layer 3 and the p-contact structure 4 end flush with one another, in the direction perpendicular to the facet 25. A corresponding configuration of the additional layer 63 can also be present in FIG. 5, 10 or 11.

[0065] According to the exemplary embodiment as shown in FIG. 13, the p-contact layer 3 projects beyond the p-contact structure 4, in the direction towards the facet 25. The additional layer 63 completely covers the p-contact layer 3, together with the p-contact structure 4. In the region in which the additional layer 63 is applied to the p-contact layer 3, the additional layer 63 preferably has a smaller thickness than the p-contact layer 3.

[0066] Unlike in FIG. 13, in FIG. 14 in the direction away from the active zone 22 the additional layer 63 is designed comparatively thick above the p-contact layer 3, in particular thicker than the p-contact layer 3 itself.

[0067] Deviating from the representation in FIG. 14 it is possible, as shown in FIGS. 5 and 10 to 13, that the additional layer 63 does not extend all the way to the facet 25. The same also applies with regard to FIGS. 15 to 17.

[0068] In the exemplary embodiment of FIG. 15, the additional layer 63, which completely covers the side surfaces 34 of the p-contact layer 3, is partially mantled by the p-contact structure 4. In contrast to the illustration, a lateral boundary face of the p-contact structure 4 can not only be arranged parallel to the facet 25, but also at an angle to the facet 25 or also in a rounded manner.

[0069] In contrast to FIG. 15, according to FIG. 16 the p-contact structure 4 completely covers the additional layer 63.

[0070] In the exemplary embodiment as shown in FIG. 17, there is an intermediate space between the p-contact layer 3 and the additional layer 63, in the direction parallel to the active zone, in particular there is a cavity. The p-contact structure 4 and the p-contact layer 3 run in a stepped manner in the direction towards the facet 25.

[0071] FIG. 18 shows a structure of the semiconductor layer sequence 2 in more detail. Such a structure is preferably also present in all other exemplary embodiments. The n-region 21 is, in the direction away from the substrate, composed of an n-cladding layer 21a and an n-waveguide 21b. In the direction away from the active zone 22, a p-waveguide 23a, 23c, a p-cladding layer 23d and a p-type semiconductor contact layer 23e are located in the p-region 23. The entire p-region is preferably based on the same material system. Optionally, the p-waveguide is divided into the two partial layers 23a, 23c, between which an electron barrier layer 23b can be located.

[0072] According to FIG. 18, the electrically insulating or electrically poorly conductive additional layer 63 partially covers the metallic p-contact structure 4.

[0073] In all the exemplary embodiments, it is possible for the insulator layer 6, the additional layer 63 and/or the protective material 64 to be composed of a plurality of partial layers, wherein these partial layers preferably follow one another directly in each case. Furthermore, the exemplary embodiments can be combined with one another; by way of example, in connection with FIG. 7 in each case additional layers 63 can be present, as shown, for example, in FIGS. 10 to 17. It is also possible in all embodiments that the facet 25 is partially or completely covered by the additional layer 63 or else by a protective material 64 and/or the insulator layer 6.

[0074] The semiconductor lasers 1 each have in particular two mutually opposite facets 25 which are oriented parallel to one another. The facets 25 are particularly preferably each provided with a current protection region 5, wherein both facets can be formed by a similar current protection region 5, or wherein different current protection regions 5, as illustrated in conjunction with FIGS. 1 to 18, can be combined with one another in a single semiconductor laser 1.

[0075] FIG. 19 shows a modification of a semiconductor laser. In this case, no transparent p-contact layer is present so that the p-region 23 is comparatively thick, which can lead to an increase in a series resistance and/or a forward voltage and thus to a limited efficiency. In contrast, the semiconductor lasers 1 of FIGS. 1 to 18 have an improved series resistance due to the substitution of the cladding layer by the p-contact layer 3. The stability of the facet 25 is likewise increased, since no charge carrier recombination takes place directly at the facet 25. By withdrawing a current from the facet 25, the formation of leakage currents across the facet 25 is also avoided. Furthermore, contamination of the facet 25 by metals is prevented, since all metals can be eliminated from the facet region. In addition, heat dissipation out of the region of the facet 25 is improved by highly heat-conducting materials, for example by means of the p-contact structure 4 which terminates flush with the facet 25.

[0076] The invention described here is not restricted by the description on the basis of the exemplary embodiments. Rather, the invention encompasses any new feature and also any combination of features, which includes in particular any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.

LIST OF REFERENCE SIGNS

[0077] 1 semiconductor laser [0078] 2 semiconductor layer sequence [0079] 21 n-region [0080] 22 active zone [0081] 23 p-region [0082] 25 facet [0083] 3 transparent p-contact layer [0084] 34 side face of the p-contact layer [0085] 4 metallic p-contact structure [0086] 5 current protection region [0087] 6 insulator layer [0088] 61 modification of the p-region [0089] 62 modification of the p-contact layer [0090] 63 additional layer [0091] 64 protective material [0092] 65 blend material [0093] 7 substrate for the semiconductor layer sequence [0094] I intensity of the laser radiation