METHOD FOR FABRICATION OF A HTS COATED TAPE
20190386197 ยท 2019-12-19
Inventors
Cpc classification
International classification
Abstract
A method for manufacturing an HTS coated tape (34) includes providing a substrate tape (1), depositing a textured buffer layer (3) onto a front side (7) of the substrate tape, depositing an HTS layer (32) onto the front side, and depositing a functional layer (2) onto a bottom side (6) of the substrate tape. The functional layer exerts a mechanically deforming effect on the substrate tape opposing a mechanically deforming effect on the substrate tape exerted by the textured buffer layer deposited on the front. The functional layer is at least partially deposited before and/or during the depositing of the textured buffer layer. This permits an HTS coated tape, with which higher critical currents of the HTS layer are achieved, to be produced.
Claims
1. A method for manufacturing a high temperature superconductor (HTS) coated tape, comprising providing a substrate tape, depositing a textured buffer layer onto a front side of the substrate tape, depositing an HTS layer onto the front side of the substrate tape, and depositing a functional layer onto a bottom side of the substrate tape, wherein the functional layer exerts a mechanically deforming effect on the substrate tape opposing a mechanically deforming effect on the substrate tape exerted by the textured buffer layer deposited on the front side of the substrate tape, and wherein the depositing of the functional layer is done at least partially before and/or during the depositing of the textured buffer layer.
2. A method according to claim 1, wherein at least a part of the functional layer is deposited onto the bottom side of the substrate tape before the textured buffer layer is deposited onto the front side of the substrate tape.
3. A method according to claim 1, wherein said depositing of the textured buffer layer includes a plurality of buffer layer deposition steps, and wherein said depositing of the functional layer includes a plurality of functional layer deposition steps, and wherein at least some of the buffer layer deposition steps alternate with at least some of the functional layer deposition steps.
4. A method according to claim 1, wherein said depositing of the textured buffer layer and said depositing of the functional layer comprise depositing buffer layer material on the front side concurrently with depositing functional layer material on the bottom side at a same longitudinal position of the substrate tape.
5. A method according to claim 1, wherein said depositing of the textured buffer layer comprises depositing with IBAD or ABAD or ISD.
6. A method according to claim 1, wherein said depositing of the functional layer comprises sputtering.
7. A method according to claim 1, wherein the functional layer comprises an oxide material.
8. A method according to claim 7, wherein the oxide material comprises at least one of YSZ, GdZrO and MgO.
9. A method according to claim 1, wherein the textured buffer layer and the functional layer are formed of a mutually same material.
10. A method according to claim 1, wherein the substrate tape has a width (W) of at least 3 mm and/or wherein the substrate tape has an aspect ratio A=W/T, wherein A40, with W: width of the substrate tape and T: thickness of the substrate tape.
11. A method according to claim 10, wherein the substrate tape has a width (W) of at least 12 mm, and/or wherein the substrate tape has an aspect ratio A200.
12. A method according to claim 1, further comprising: repeatedly or continuously monitoring a degree of substrate tape strain during the manufacturing of the HTS coated tape, and using the monitored degree to feedback-control said depositing of the textured buffer layer and/or said depositing of the functional layer.
13. A method according to claim 12, wherein said monitoring of the degree of substrate tape strain comprises monitoring a substrate tape curvature with respect to a width direction of the substrate tape.
14. A method according to claim 1, further comprising limiting a substrate tape curvature with respect to a width direction of the substrate tape such that a maximum mutual inclination of surface areas of the substrate tape does not exceed 4 at any time during said depositing of the textured buffer layer.
15. A method according to claim 14, wherein the substrate tape curvature with respect to the width direction of the substrate tape is limited such that the maximum mutual inclination of the surface areas of the substrate tape does not exceed 2 at any time during said depositing of the textured buffer layer.
16. A method according to claim 1, further comprising: during said depositing of the textured buffer layer and said depositing of the functional layer, translating the substrate tape between two reservoirs at least once, and during said translating between the two reservoirs, passing the substrate tape through at least one deposition zone for depositing buffer layer material and/or functional layer material on the substrate tape.
17. A method according to claim 16, wherein said depositing of the textured buffer layer and said depositing of the functional layer comprises translating the substrate tape between the two reservoirs back and forth multiple times.
18. A method according to claim 16, wherein said translating between the two reservoirs comprises: using a multipath translation area with multiple windings of the substrate tape, and twisting the substrate tape at least once by a half turn within the multipath translation area.
19. A method according to claim 1, wherein said depositing of the textured buffer layer and said depositing of the functional layer comprise cancelling out deforming effects in total, to cancel out a degree of strain in the HTS coated tape.
20. A high temperature superconductor (HTS) coated tape, comprising a substrate tape, a textured buffer layer and an HTS layer on a front side of the substrate tape, and a functional layer on a bottom side of the substrate tape, wherein mechanically deforming strain on the substrate tape of the layers on the front side and on the bottom side are in total cancelled out, such that the HTS coated tape is without strain.
Description
BRIEF DESCRIPTION OF THE DRAWING
[0043] Embodiments for illustrating the invention are shown in the drawing.
[0044]
[0045]
[0046]
[0047]
[0048]
[0049]
[0050]
[0051]
[0052]
[0053]
DETAILED DESCRIPTION
[0054] It should be noted that the figures are schematic in nature, and some features may be shown in an exaggerated or understated way, in particular thicknesses of functional layer and textured buffer layer, in order to show particular features of an inventive HTS conductor tape or an inventive production method more clearly.
[0055]
[0056] In the variant illustrated, the substrate tape 1 is translated in
[0057] At the deposition zone 4, functional layer material is deposited on one side of the substrate tape 1, called the bottom side 6. The functional layer material may be deposited by any suitable process, in particular having a sputtering nature (origin), e.g. magnetron or diode sputtering, ion beam sputtering or RF sputtering. In some cases a PLD (pulsed laser deposition) process may be employed. The functional layer 2 (or the functional layer material and the method employed for its deposition, respectively) yields a mechanically deforming effect on the substrate tape 1, causing some bending along the width direction WD, see status S2 (negative deformation), here with the side edges of the substrate tape 1 being bent downwards.
[0058] Subsequently, at deposition zone 5, buffer layer material is deposited on the other side of the substrate tape 1, called the front side 7. The buffer layer material is here deposited by an ABAD process (alternating beam assisted deposition), resulting in the textured buffer layer 3. The textured buffer layer 3 (i.e. the buffer layer material and the method for its deposition, respectively) produces a mechanically deforming effect for the substrate tape 1, too, which is opposed to the deforming effect of the functional layer 2. Accordingly, during deposition of the buffer layer material, the previous bending (negative deformation) of the substrate tape 1 is reduced until the substrate tape 1 is flat again, and further deposited buffer layer material causes an increasing bending of the substrate tape 1 (positive deformation), here with the side edges of the substrate tape 1 being bent upwards, compare status S3.
[0059] The layer thicknesses, materials and regimes for their deposition are chosen here such that the absolute values of strain of the substrate tape 1 in state S2 and in state S3 are basically identical. The strain of the substrate tape 1 with respect to the width direction WD can be expresses as a maximum mutual inclination of surface areas of a side of the substrate tape 1, here at the opposing side edges of said side of the substrate tape 1, compare the angle between the tangents laid on the side edges in the cross-section. The absolute values of the maximum mutual inclinations MI2 and MI3 in state S2 and in state S3 are about the same, i.e. |MI2|=|MI3|, and during the manufacturing process, the absolute value of the momentary maximum mutual inclination will never be above |MI2|.
[0060] When directly depositing the textured buffer layer 3 on the substrate tape 1 without using any functional layer as in the state of the art, compare
[0061] The inventive variants described in the following resemble the variant of
[0062]
[0063] In the variant of the inventive method of
[0064]
[0065] In this variant, the deposition zone 4 for depositing functional layer material and the deposition zone 5 for depositing buffer layer material act at identical positions (or position areas, respectively) on the substrate tape 1 with respect to the longitudinal direction LD, albeit on different sides 6, 7. The functional layer 2 is grown concurrently with the textured buffer layer 3; the layer thicknesses grow in parallel without offset with the progression (translation) of the substrate tape 1 through the deposition zones 4, 5. It is thereby possible to keep balanced the deforming effects of the functional layer 2 and the textured buffer layer 3 though the entire manufacturing time. The substrate tape 1, which is initially flat as can be seen in state S1, stays flat throughout the entire manufacturing time until it reaches its final state S2. In this way, the buffer layer material is always deposited on a substrate tape 1 with no strain (bending), allowing excellent texture quality for the textured buffer layer.
[0066] In the variant of
[0067] In the variant illustrated in
[0068] The functional layer material deposition steps and the buffer layer material deposition steps alternate. Starting from the flat substrate tape in state S1, here a first part (layer thickness part) of the functional layer is deposited at deposition zone 4a, causing a light strain (bending) in the substrate tape 1, see state S2. Then a first part (layer thickness part) of the textured buffer layer 3 is deposited, enough to remove the strain again, see the flat substrate tape 1 in state S3. Then a second part of the functional layer 2 is deposited at deposition zone 4b, causing again some strain again, see state S4, and then a second part of the textured buffer layer 3 is deposited at deposition zone 5b, removing that strain again, see state S5, and so on. The final substrate tape 1 (after deposition of the last part of the textured buffer layer 3) carrying the complete functional layer 2 and the complete textured buffer layer 3, is flat again, see state SF.
[0069] During the entire manufacturing process, the strain (deformation) of the substrate tape 1 never exceeds the strain (bending) of state S2 here, i.e. the state after deposition of only a small part (layer thickness part) of here one fifth of (here) the final functional layer 2.
[0070] Note that the process of
[0071]
[0072] Substrate tape 1 is transported from a first reservoir 10 to a second reservoir 11. During this transport, the substrate tape 1 is lead over a winding rack 12, which here has four axes 13 for guide rollers 14. The substrate tape 1 is wound in a multitude of windings over the guide rollers 14.
[0073] In the variant shown, the substrate tape 1 passes through a deposition zone 5 for depositing the textured buffer layer on a front side 7 of the substrate tape 1, and through a deposition zone 4 for depositing the functional layer on a bottom side 6 of the substrate tape 1.
[0074] At the deposition zone 4, a multipath translation area 15 with three parallel windings of the substrate tape 1 is provided. Each location on the substrate tape 1, during transport of the substrate tape 1 from the reservoir 10 to the reservoir 11, will pass through the deposition area 4 three times, resulting in three deposition steps of functional layer material. At the deposition zone 5, a multipath translation area 16 with four parallel windings of the substrate tape 1 is provided. Each location on the substrate tape 1, during transport of the substrate tape 1 from the reservoir 10 to the reservoir 11, will pass through the deposition area 5 four times, resulting in four deposition steps.
[0075] Incoming substrate tape 1 passes alternatingly through the deposition zones 4 and 5 (here starting and ending with deposition zone 5), so the textured buffer layer and the functional layer are grown in alternating deposition steps offset in longitudinal direction along the substrate tape 1 (compare the similar situation in
[0076] The setup shown in
[0077]
[0078] Again, substrate tape 1 is transported from a first reservoir 10 to a second reservoir 11. During this transport, the substrate tape 1 is lead over a winding rack 12, which here has four axes 13 for guide rollers 14a-14d. The substrate tape 1 is wound in a multitude of windings over the guide rollers 14a-14d.
[0079] In the variant shown, the substrate tape 1 passes through a deposition zone 17 for depositing both the textured buffer layer on a front side 7 of the substrate tape 1 and for depositing the functional layer on a bottom side 6 of the substrate tape 1. At the deposition zone 17, a multipath translation area 18 with four parallel windings of the substrate tape 1 is provided between the guide rollers 14a, 14b. Each location on the substrate tape 1, during transport of the substrate tape 1 from the reservoir 10 to the reservoir 11, will pass through the deposition zone 17 four times, resulting in four deposition steps. From winding to winding in the multipath translation area 18, the substrate tape 1 is twisted by 180, here between the guide rollers 14c and 14d, compare the three twists 20. As a result, in the multipath translation area 18, the windings of the substrate tape 1 face a material source 19 of the deposition zone 17, located below the winding rack 12 here, alternatingly with the front side 7 and the bottom side 6. Accordingly, material deposition from the material source 19 will in the course of the transport of the substrate tape 1 from reservoir 10 to reservoir 11 alternatingly hit the front side 7 and the bottom side 6, resulting in respective parts (layer thickness parts) of the textured buffer layer and the functional layer on the substrate tape 1.
[0080] In this variant, the same material is used for the functional layer and the textured buffer layer.
[0081] Note that in both variants of
[0082]
[0083] On a substrate tape 1 typically made of a flexible metallic material such as stainless steel, on a front side 7, a textured buffer layer 3 is deposited, e.g. made of YSZ (yttrium stabilized zirconia). On top of the textured buffer layer 3, in the example shown, there is a cap buffer layer 31 and further a HTS (high temperature superconductor) layer 32, here made from ReBCO material (rare earth barium copper oxide, for example YBCO yttrium barium copper oxide). On top of the HTS layer 32, there is a metallic envelope (also called shunt layer or capping layer) 33 made of copper or a noble metal such as silver or gold.
[0084] On a bottom side 6 of the substrate tape 1, there is deposited a functional layer 2.
[0085] The layers deposited on the front side 7, and above all the textured buffer layer 3, exert a deforming effect on the substrate tape 1. However, the functional layer 2 on the bottom side 6 also exerts a deforming effect on the substrate tape 1, opposing the deforming effect of the layers on the front side 7 of the substrate tape 1.
[0086] By depositing the functional layer 2 at least partially before and/or at least partially during the deposition of the textured buffer layer 3, a strain (in particular bending with respect to the width direction WD) of the substrate tape 1 may be limited. The invention is particularly suited for substrate tapes 1 with a high aspect ratio A=W/T, with W: width of the substrate tape and T: thickness of the substrate tape 1 (measured in normal direction, i.e. perpendicular to the width direction WD and the longitudinal direction), such as with A40, preferably A80, and most preferably A200.
LIST OF REFERENCE SIGNS
[0087] 1 substrate tape [0088] 2 functional layer [0089] 3 textured buffer layer [0090] 4 deposition zone (functional layer) [0091] 4a-4e deposition zones (functional layer) [0092] 5 deposition zone (textured buffer layer) [0093] 5a-5e deposition zones (functional layer) [0094] 6 bottom side [0095] 7 front side [0096] 8 control unit [0097] 9 sensor [0098] 10 reservoir [0099] 11 reservoir [0100] 12 winding rack [0101] 13 axis [0102] 14, 14a-14d guide rollers [0103] 15 multipath translation area [0104] 16 multipath translation area [0105] 17 deposition zone (common for functional layer and textured buffer layer) [0106] 18 multipath translation area [0107] 19 material source [0108] 20 twist [0109] 31 cap buffer layer [0110] 32 HTS layer [0111] 33 metallic envelope [0112] 34 HTS coated tape [0113] LD longitudinal direction [0114] MI2, MI3 maximum mutual inclination at states S2, S3 [0115] MI2.sub.N maximum mutual inclination not using a functional layer at state S2 [0116] S1-S5, SF states (substrate tape) [0117] T thickness [0118] W width [0119] WD width direction