SUBTRACTIVE METHOD FOR MANUFACTURING CIRCUIT BOARD WITH FINE INTERCONNECT

Abstract

A subtractive method for manufacturing a circuit board with fine interconnect includes steps of disposing a resist film on a metal layer on a surface of a wiring substrate, and performing a dry etching process to etch and penetrate the resist film and form a wiring pattern groove in the metal layer, the depth of the wiring pattern groove is less than the thickness of the first metal layer; further wet etching process is performed, and the metal layer is etched again from the wiring pattern groove to penetrate the metal layer to form wires in the metal layer, and finally the resist film is removed. By first using dry etching to form wiring pattern grooves in the metal layer, the thickness of the metal layer to be removed by wet etching is reduced, thereby reducing side etching generated by the wet etching process and improving the wiring quality.

Claims

1. A subtractive method for manufacturing a circuit board with fine interconnect, including the following steps: preparing a wiring substrate with a first metal layer on a first surface of the wiring substrate; disposing a resist film on the first metal layer; performing a dry etching process to etch from a surface of the resist film towards the first surface to form an opening corresponding to a wiring pattern, and the opening penetrating the resist film and forming a wiring pattern groove in the first metal layer, wherein a depth of the wiring pattern groove is less than a thickness of the first metal layer; performing a wet etching process to etch and penetrate the first metal layer from the wiring pattern groove of the first metal layer to form wirings in the first metal layer; and removing the resist film.

2. The subtractive method as claimed in claim 1, wherein the dry etching process is a laser etching process.

3. The subtractive method as claimed in claim 1, wherein the wiring substrate has a second metal layer on a second surface opposite to the first surface, and the step of preparing a wiring substrate includes the following sub-steps: disposing a metal foil layer respectively on the first surface and the second surface of the wiring substrate; performing a drilling process to form at least one through hole through the wiring substrate and both of the metal foil layers on the first and second surfaces; and performing a metal plating process, to form an electroplating layer on the metal foil layer of the first surface and the metal foil layer of the second surface of the wiring substrate respectively and on an inner wall of the at least one through hole; wherein, the metal foil layer and the electroplating layer on the first surface are combined as the first metal layer, and the metal foil layer and the electroplating layer on the second surface are combined as the second metal layer.

4. The subtractive method as claimed in claim 2, wherein the wiring substrate has a second metal layer on a second surface opposite to the first surface, and the step of preparing a wiring substrate includes the following sub-steps: disposing a metal foil layer respectively on the first surface and the second surface of the wiring substrate; performing a drilling process to form at least one through hole through the wiring substrate and both of the metal foil layers on the first and second surfaces; and performing a metal plating process, to form an electroplating layer on the metal foil layer of the first surface and the metal foil layer of the second surface of the wiring substrate respectively and on an inner wall of the at least one through hole; wherein, the metal foil layer and the electroplating layer on the first surface are combined as the first metal layer, and the metal foil layer and the electroplating layer on the second surface are combined as the second metal layer.

5. The subtractive method as claimed in claim 3, wherein, in the step of disposing a resist film on the first metal layer, the resist film is simultaneously disposed on a surface of the second metal layer and on the inner wall in the at least one through hole; in the step of performing a dry etching process, the resist film on the second surface of the wiring substrate is etched to form an opening corresponding to another wiring pattern, and said opening penetrates the resist film on the second metal layer, and forms another wiring pattern groove in the second metal layer, and a depth of said another wiring pattern groove in the second metal layer is smaller than the thickness of the second metal layer; and in the step of performing a wet etching process, the second metal layer is further etched from the wiring pattern groove in the second metal layer to penetrate the second metal layer, so as to form wirings in the second metal layer; wherein, the wirings in the first metal layer are electrically connected to the wirings in the second metal layer via the electroplating layer in the inner wall of the at least one through hole.

6. The subtractive method as claimed in claim 4, wherein, in the step of disposing a resist film on the first metal layer, the resist film is simultaneously disposed on a surface of the second metal layer and on the inner wall in the at least one through hole; in the step of performing a dry etching process, the resist film on the second surface of the wiring substrate is etched to form an opening corresponding to another wiring pattern, and said opening penetrates the resist film on the second metal layer, and forms another wiring pattern groove in the second metal layer, and a depth of said another wiring pattern groove in the second metal layer is smaller than the thickness of the second metal layer; and in the step of performing a wet etching process, the second metal layer is further etched from the wiring pattern groove in the second metal layer to penetrate the second metal layer, so as to form wirings in the second metal layer; wherein, the wirings in the first metal layer are electrically connected to the wirings in the second metal layer via the electroplating layer in the inner wall of the at least one through hole.

7. The subtractive method as claimed in claim 5, wherein, in the step of performing a dry etching process, as the wiring pattern groove is formed in the first metal layer, and said another wiring pattern groove is formed in the second metal layer, the wiring pattern groove on the first surface or said another wiring pattern groove on the second surface penetrates the electroplating layer.

8. The subtractive method as claimed in claim 6, wherein, in the step of performing a dry etching process, as the wiring pattern groove is formed in the first metal layer, and said another wiring pattern groove is formed in the second metal layer, the wiring pattern groove on the first surface or said another wiring pattern groove on the second surface penetrates the electroplating layer.

9. The subtractive method as claimed in claim 5, wherein, in the step of performing a dry etching process, as the wiring pattern groove is formed in the first metal layer, and said another wiring pattern groove is formed in the second metal layer, the wiring pattern groove on the first surface of the wiring substrate or said another wiring pattern groove on the second surface does not penetrate the electroplating layer.

10. The subtractive method as claimed in claim 6, wherein, in the step of performing a dry etching process, as the wiring pattern groove is formed in the first metal layer, and said another wiring pattern groove is formed in the second metal layer, the wiring pattern groove on the first surface or said another wiring pattern groove on the second surface does not penetrate the electroplating layer.

11. The subtractive method as claimed in claim 3, wherein the resist film, the metal foil layer and the electroplating layer are made of different metal materials.

12. The subtractive method as claimed in claim 4, wherein the resist film, the metal foil layer and the electroplating layer are made of different metal materials.

13. The subtractive method as claimed in claim 1, wherein the wiring substrate includes a multilayer wiring substrate with a composite wiring structure.

14. The subtractive method as claimed in claim 1, wherein the wiring substrate is a hard wiring substrate, a soft wiring substrate or a soft-and-wire compound wiring substrate.

15. The subtractive method as claimed in claim 2, wherein an etching depth of the dry etching process is greater than a thickness of the resist film, and less than the sum of the thickness of the resist film and the thickness of the first metal layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] FIGS. 1A to 1E are cross-sectional views of a process flow of the subtractive method for manufacturing a circuit board with fine interconnect of the present invention; and

[0016] FIGS. 2A to 2G are cross-sectional views of a process flow of the subtractive method for manufacturing a circuit board with fine interconnect of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0017] In the following, the technical solutions in the embodiments of the present invention will be clearly and fully described with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of, not all of, the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0018] Please refer to FIGS. 1A to 1G: the subtractive method for manufacturing a circuit board with fine interconnect of the present invention mainly includes the following steps.

[0019] As shown in FIG. 1A, a wiring substrate 10 is prepared, and a first surface of the wiring substrate 10 has a first metal layer 20 on it.

[0020] As shown in FIG. 1B, a resist film 30 is disposed on the first metal layer 20.

[0021] As shown in FIG. 1C, a dry etching process is performed, and etching proceeds from a surface of the resist film 30 towards the wiring substrate 10 to form an opening 301 according to a wiring pattern. As the dry etching proceeds, the opening penetrates the resist film 30, and forms a wiring pattern groove 200 in the first metal layer 20. When the dry etching process is completed, the depth d1 of the wiring pattern groove 200 is smaller than the thickness D1 of the first metal layer 20.

[0022] As shown in FIG. 1D, a wet etching process is then performed, and the first metal layer 20 is etched via the wiring pattern groove 200 in the first metal layer 20 to penetrate the first metal layer 20.

[0023] As shown in FIG. 1E, the resist film 30 is then removed. The resist film 30 is, for example, etched away by another etching process specifically for materials that the resist film 30 are made of.

[0024] Preferably, the dry etching process is a laser etching process with a specified depth controlled by a computer, and the computer not only controls the laser etching depth, but also specifies the wiring patterns of the wiring pattern groove 200 formed by the laser etching, i.e. the corresponding area that should be removed in the first metal layer 20. The depth of the laser etching not only penetrates the resist film 30, but also needs to form the wiring pattern groove 200 in the first metal layer 20. The thickness D1 of the first metal layer and the thickness D2 of the resist film 30 are known at the time of disposition, and thereby the etching depth d2 of the laser etching is set to be greater than the thickness D2 of the resist film 30 and smaller than a sum of the thickness D2 of the resist film 30 and the thickness D1 of the first metal layer 20. That is to say, the depth d2 of the laser etching is restricted not to penetrate the first metal layer 20. Preferably, the laser etching process utilizes, for example, ultraviolet laser, green laser, nanosecond laser or femtosecond laser technologies.

[0025] For example, please refer to FIG. 1C as well. Assuming the thickness D1 of the first metal layer is 6 ?m, the thickness D2 of the resist film 30 is 1 ?m, and the depth of the laser etching d2 can be set as 5 ?m. In this way, the thickness of the remaining first metal layer 20 under the wiring pattern groove 200 is 2 ?m, that is to say, when performing wet etching, it is only necessary to set the etching depth to 2 ?m to complete the wiring in the first metal layer.

[0026] In the present example, after completing the deposition of the patterned photoresist layer, if the etching of the metal layer of the same specification is directly performed by wet etching as described in the prior art, it will be necessary to wet etch the metal layer by 6 ?m, which will continuously cause side etching during the wet etching process. In contrast, as the present invention reduces the thickness of the metal layer to be removed by the wet etching process (only 2 ?m as mentioned above), extents of the side etching occurring during the wet etching process can be greatly reduced.

[0027] Please refer to FIGS. 2A to 2C. In a first embodiment, the subtractive method for manufacturing a circuit board with fine interconnect of the present invention can also be applied to a manufacturing process of a double-sided circuit board. In this embodiment, the wiring substrate 10 further has a second surface 12 opposite to the first surface 11, and the second surface 12 has a second metal layer 40 thereon, and the aforementioned steps of preparing the wiring substrate 10 further include the following sub-steps.

[0028] As shown in FIG. 2A, the wiring substrate 10 is provided, and metal foil layers 21 and 41 are respectively disposed on the first surface 11 and the second surface 12 of the wiring substrate 10. The metal foil layers 21 and 41 are, for example, copper foil layers pre-disposed on the first surface 11 and the second surface 12 of the wiring substrate 10 respectively, and the thicknesses of the metal foil layers 21 and 41 are preferably 3-5 ?m.

[0029] As shown in FIG. 2B, a drilling process is performed to form at least one through hole 100 penetrating the wiring substrate 10 and both the metal foil layers 21 and 41.

[0030] As shown in FIG. 2C, a metal plating process is performed. An electroplating layer 50 is formed on the metal foil layer 21 of the first surface 11 of the wiring substrate 10, the metal foil layer 41 of the second surface 12 of the wiring substrate 10, and an inner wall 101 of the at least one through hole 100. In this embodiment, the combination of metal foil layer 21 and electroplating layer 50 on the first surface 11 can be regarded as the aforementioned first metal layer 20, and the combination of metal foil layer 41 and electroplating layer 50 on the second surface 12 can be regarded as the aforementioned second metal layer 40, and the thickness of the electroplating layer 50 is preferably 3-5 ?m. Preferably, the metal foil layers 21 and 41 and the electroplating layer 50 are made of the same metal material, such as copper.

[0031] The steps shown in FIGS. 2A to 2C are about completing the dispositions of the conductive through holes 100 in the wiring substrate 10 of the double-sided circuit board. Next, please refer to FIGS. 2D to 2F which are about completing the formation of wires on the first surface 11 and the second surface 12 of the wiring substrate 10.

[0032] As shown in FIG. 2D, in this embodiment, when the resist film 30 is disposed on the surface of the first metal layer 20 of the wiring substrate 10 (i.e. the surface of the electroplating layer 50 of the first surface 11), simultaneously, the resist film 30 is also disposed on the surface of the second metal layer 40 (i.e. the surface of the electroplating layer 50 of the second surface 12), and the electroplating layer 50 of an inner wall 101 in the at least one through hole 100. The resist film 30 is disposed by, e.g. electroplating or electroless plating.

[0033] Preferably, the resist film 30, the metal foil layers 21 and 41 and the electroplating layer 50 are made of different metal materials. For example, the metal foil layers 21 and 41 and the electroplating layer 50 are copper metal, and the resist film 30 is made of metals such as tin, nickel, etc. or alloys thereof; however, the present invention is not limited thereto. Since the wiring substrate 10 and the first metal layer 20 thereon are immersed in an etching solution in a wet etching process, the etching is likely to etch certain kinds of metals, for example copper metal used as the first metal layer 20. In order to prevent etching of specific areas, the resist film 30 and the metal foil layers 21 and 41 and the electroplating layer 50 are made of different materials.

[0034] As shown in FIG. 2E. In this embodiment, when performing the step of the dry etching process, in addition to etching and penetrating the resist film 30 on the first metal layer 20, and forming the wiring pattern groove 200 in the first metal layer 20, the resist film 30 on the second surface of the wiring substrate 10 is also subjected to dry etching to form an opening 301 through the resist film 30 to form a wiring pattern groove 400 in the second metal layer 40. Wherein, on the first surface 11 or the second surface 12, the wiring pattern grooves 200 and 400 may either penetrate the electroplating layer 50 or not; however, at this moment, the wiring pattern grooves 200 and 400 do not penetrate the metal foil layers 21 and 41.

[0035] As shown in FIG. 2F, in this embodiment, in a step of performing the wet etching process, in addition to etching in the wiring pattern groove 200 of the first metal layer 20, the second metal layer 40 is further etched via the wiring pattern groove 400 of the second metal layer 40 to penetrate the second metal layer 40, and to form wires in the second metal layer 40, and the wires in the first metal layer 20 are electrically connected to the wires in the second metal layer 40 by the electroplating layer 50 on the inner wall 101 of the at least one through hole 100.

[0036] Finally, as shown in FIG. 2G, the resist film 30 is removed.

[0037] In the previous step as shown in FIG. 2E, if the wiring pattern grooves 200 and 400 penetrate the electroplating layer 50, the wet etching process shall continue to etch and penetrate the metal foil layers 21 and 41. If the wiring pattern grooves 200 and 400 do not penetrate the electroplating layer 50, the wet etching process shall firstly etch and penetrate the electroplating layer 50, and then continue to etch and penetrate the metal foil layers 21 and 41.

[0038] It should be noted that the characteristics of the metal foil layer 41, the electroplating layer 50, and the wiring pattern groove 400 of the second metal layer 40 are the same as those of the metal foil layer 41, the electroplating layer 50, and the wiring pattern groove 200 of the first metal layer 20, hence their characteristics are not repeated here.

[0039] Preferably, the wiring substrate 10 is, for example, a hard wiring substrate, a soft wiring substrate or a soft-and-hard compound wiring substrate. In addition, the wiring substrate 10 can also be a multilayer wiring substrate with a composite wiring structure, including a plurality of laminated dielectric layers, wiring layers, etc.

[0040] The aforementioned are preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principles of the present invention, certain improvements and retouches of the present invention can still be made, which are nevertheless considered as within the protection scope of the present invention.