uLED LIGHT-EMITTING AND DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, EXTERNAL CARRIER INJECTION AND MASS TRANSFER AND PREPARATION METHOD THEREOF

Abstract

The present invention relates to a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer and a preparation method thereof. The ?LED light-emitting and display device includes one or more light-emitting pixels, and each light-emitting pixel includes a pixel lower electrode, a lower insulation layer, a ?LED chip, an upper insulation layer and a pixel upper electrode from bottom to top, wherein the upper insulation layer and the lower insulation layer prevent the ?LED chip from being in direct electrical contact with the pixel lower electrode and the pixel upper electrode, and the ?LED chip is lit by an alternating electric field through electromagnetic coupling. In the present invention, the ?LED chip is not in electrical contact with a driving electrode, such that a structure of the ?LED chip may be simplified, a ?LED chip array may be disposed in a manner such as ink-jet printing, screen printing, spin coating, brush coating, roll coating or chemical self-assembly, the use of a mass transfer process and a complex bonding process of the ?LED chip and a driving array may be avoided, a manufacturing period of the ?LED device is effectively shortened and manufacturing costs are reduced, and it is expected to enhance the market competitiveness of the ?LED.

Claims

1. A ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer, comprising: one or more light-emitting pixels, wherein each light-emitting pixel comprises a pixel lower electrode, a lower insulation layer, a ?LED chip, an upper insulation layer and a pixel upper electrode from bottom to top; the upper insulation layer and the lower insulation layer prevent the p LEI) chip from being in direct electrical contact with the pixel lower electrode and the pixel upper electrode, and the ?LED chip is lit by an alternating electric field through electromagnetic coupling.

2. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein the ?LED chip comprises a P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer that are stacked to form a semiconductor junction capable of emitting light under the action of the electric field.

3. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 2, wherein the semiconductor junction in the ?LED chip comprises but is not limited to a single PN junction, a single heterojunction, a composite PN junction comprising a plurality of PN junctions or a combined semiconductor junction comprising a PN junction and a heterojunction.

4. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 2, wherein the semiconductor junction is located on a surface or in an interior of the p?LED chip.

5. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 2, wherein a thickness of the P-type semiconductor layer ranges from 1 nm to 2.0 ?m, a thickness of the light emitting layer ranges from 1 nm to 1.0 ?m, and a thickness of the N-type semiconductor layer ranges from 1 nm to 2.5 ?m.

6. The PLED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein a size of the ?LED chip ranges from 1 nm to 1000 ?m, and a thickness of the ?LED chip ranges from 1 nm to 100 ?m.

7. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 2, wherein the ?LED chip emits light in different colors comprising infrared light or ultraviolet light by selecting different semiconductor materials.

8. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 3, wherein the ?LED chip is capable of emitting light in the same color or in different mixed colors by adopting the composite PN junction or the combined semiconductor junction.

9. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein there are one or more ?LED chips in each pixel.

10. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 9, neither of sizes of the pixel upper electrode and the pixel lower electrode in one pixel is less than a sum of sizes of all ?LED chips in the pixel.

11. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein at least one of the pixel upper electrode and the pixel lower electrode is a transparent electrode, a material of the transparent electrode comprises but is not limited to graphene, indium tin oxide, a carbon nanotube, a silver nanowire, a copper nanowire or a combination thereof, and a material of a non-transparent electrode comprises but is not limited to gold, silver, aluminum, copper or a combination thereof.

12. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein light transmittance of the upper insulation layer or the lower insulation layer in a visible light range is greater than or equal to 80%, and a material thereof comprises an organic insulation material, an inorganic insulation material, air or a combination thereof.

13. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein thicknesses of the upper insulation layer and the lower insulation layer both range from 1 nm to 1000 ?m.

14. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein the upper insulation layer and the lower insulation layer are both deposited on a surface of the ?LED chip.

15. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein the upper insulation layer and the lower insulation layer are deposited on surfaces of the pixel upper electrode and the pixel lower electrode respectively.

16. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein a voltage waveform of the alternating electric field comprises but is not limited to a sine wave, a triangle wave, a square wave, a pulse or a combination thereof.

17. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein a voltage frequency of the alternating electric field ranges from 1 Hz to 1000M Hz.

18. The ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, wherein the ?LED light-emitting and display device is manufactured on a rigid material comprising glass or ceramics, or manufactured on a flexible material comprising P1.

19. A method for manufacturing the ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to claim 1, comprising the following steps: in S1, obtaining a self-supporting ?LED chip by growing an LED thin film structure capable of generating a light source in three primary colors, i.e., red, green and blue on a surface of a semiconductor substrate and forming a ?LED chip pattern with a desired size by cutting and peeling; in S2, preparing a lower electrode array of a sub-pixel having three primary colors, i.e., red, green and blue, a thin film transistor driving array, and an electrical connection line therebetween on the surface of the substrate; in S3, realizing non-electrical contact between the ?LED chip and a corresponding sub-pixel lower electrode through an insulation layer preparation process by disposing red, green and blue ?LED chips on a surface of the lower electrode of the sub-pixel having three primary colors, i.e., red, green and blue correspondingly and respectively; and in S4, realizing non-electrical contact between the ?LED chip and a corresponding sub-pixel upper electrode through the insulation layer preparation process by disposing a pixel upper electrode and an electrical connection line thereof on the surface of the substrate provided with red, green and blue ?LED chips, so as to obtain a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer.

20. The method according to claim 19, wherein in S3, the red, green and blue ?LED chips are disposed at desired positions respectively in a manner of ink-jet printing, screen printing, spin coating, brush coating, roll coating, chemical self-assembly, or electromagnetic self-assembly.

21. The method according to claim 19, wherein in S3, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel lower electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the ?LED chip and a pixel lower electrode by firstly preparing an insulation layer on a surface of a pixel lower electrode array, and then disposing the ?LED chip on a surface of the insulation layer.

22. The method according to claim 19, wherein in S3, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel lower electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the ?LED chip and a pixel lower electrode by wrapping an insulation layer on a surface of the ?LED chip, and then preparing the ?LED chip wrapped with the insulation layer on a surface of the pixel lower electrode.

23. The method according to claim 19, wherein in S4, the pixel upper electrode and the electrical connection line thereof are prepared by lamination or growth.

24. The method according to claim 19, wherein in S4, realizing the non-electrical contact between the PLED chip and the corresponding sub-pixel upper electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the ?LED chip and the pixel upper electrode by firstly depositing an insulation layer on a surface of the ?LED chip, and then preparing the pixel upper electrode on a surface of the insulation layer.

25. The method according to claim 19, wherein in S4, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel upper electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the ?LED chip and the pixel upper electrode by firstly preparing an insulation layer on a surface of the pixel upper electrode, and then manufacturing the upper electrode and the insulation layer on a surface of the ?LED chip through a lamination technology.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0036] FIG. 1 is a sectional view of a light-emitting pixel in a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to an embodiment of the present invention.

[0037] FIG. 2 is a sectional view of a light-emitting pixel in another ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer according to an embodiment of the present invention.

[0038] FIG. 3 illustrates a process of preparing the light-emitting pixel in FIG. 1.

[0039] FIG. 4 illustrates another process of preparing the light-emitting pixel in FIG. 1.

[0040] FIG. 5 to FIG. 7 illustrate a process of preparing a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer with the light-emitting pixel in FIG. 1.

[0041] FIG. 5 is a schematic diagram of a lower substrate.

[0042] FIG. 6 is a schematic diagram of a lower substrate on which a PLED is prepared.

[0043] FIG. 7 is a schematic diagram of a ?LED light-emitting and display device.

[0044] Numerals in the drawings are described as follows: 1 represents to a lower substrate, 101 represents a pixel lower electrode disposed on a surface of the lower substrate, 102 represents a lower insulation layer, 103 represents a thin film transistor driving array disposed on the surface of the lower substrate, 104 represents an electrode connection line disposed on the surface of the lower substrate, 2 represents an upper substrate, 201 represents a pixel upper electrode disposed on a surface of the upper substrate and an electrode connection line, 202 represents an upper insulation layer, 3 represents a ?LED chip, 301 represents a P-type semiconductor layer, 302 represents an N-type semiconductor layer, 303 and 304 both represent a light emitting layer, and 305 represents a P-type semiconductor layer.

DETAILED DESCRIPTION OF THE INVENTION

[0045] The present invention will be further described below in combination with accompanying drawings and embodiments.

[0046] It should be noted that, the following detailed descriptions are all exemplary, and are intended to provide further explanation of the present invention. All technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skills in the art, unless otherwise indicated.

[0047] It is to be noted that, the terms used herein are for the purpose of describing the specific embodiments only, and are not intended to limit the exemplary embodiments of the present invention. For example, singular forms used herein are also intended to include plural forms, unless otherwise clearly indicated in the context. In addition, it should also be understood that the terms comprise and/or include used in the present specification indicate the presence of features, steps, operations, devices, components and/or combinations thereof.

[0048] An embodiment of the present invention provides a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer. The ?LED light-emitting and display device includes one or more light-emitting pixels, and each light-emitting pixel includes a pixel lower electrode, a lower insulation layer, a ?LED chip, an upper insulation layer and a pixel upper electrode from bottom to top, wherein the upper insulation layer and the lower insulation layer can prevent the ?LED chip from being in direct electrical contact with the pixel lower electrode and the pixel upper electrode, and the ?LED chip is lit by an alternating electric field through electromagnetic coupling. An intensity and polarity of the alternating electric field changes over time, wherein the pixel lower electrode and the pixel upper electrode include a connection line attached thereto and a driving module.

[0049] In this embodiment, there is no direct contact between the pixel electrode and the ?LED chip, and the ?LED chip is lit by an AC driving signal through electrical coupling. An insulation material is filled between the ?LED chip and the driving electrode, and the external alternating electric field drives periodic oscillation of an electron-hole pair inside the ?LED to form radiative recombination in a light emitting region.

[0050] In this embodiment, the ?LED chip includes a P-type semiconductor layer, a light emitting layer (multi-quantum well) and an N-type semiconductor layer that are stacked to form a semiconductor junction that can emit light under the action of the electric field.

[0051] In this embodiment, the semiconductor junction in the ?LED chip includes but is not limited to a single PN junction, a single heterojunction, a composite PN junction including a plurality of PN junctions or a combined semiconductor junction including a PN junction and a heterojunction.

[0052] In this embodiment, the semiconductor junction is located on a surface or in an interior of the p. ED chip.

[0053] In this embodiment, a thickness of the P-type semiconductor layer ranges from 1 nm to 2.0 ?m, a thickness of the light emitting layer ranges from 1 nm to 1.0 ?m, and a thickness of the N-type semiconductor layer ranges from 1 nm to 2.5 ?m.

[0054] In this embodiment, a size of the pLED chip ranges from 1 nm to 1000 ?m, and a thickness of the ?LED chip ranges from 1 nm to 100 ?m.

[0055] In this embodiment, the ?LED chip emits light in different colors including infrared light or ultraviolet light by selecting different semiconductor materials.

[0056] In this embodiment, the pLED chip can emit light in the same color or in different mixed colors by adopting the composite PN junction or the combined semiconductor junction.

[0057] In this embodiment, there are one or more ?LED chips in each pixel. When there are more than one ?LED chips, all pLED chips are located on the same horizontal plane, and neither of sizes of the pixel upper electrode and the pixel lower electrode in one pixel is less than a sum of sizes of all ?LED chips in the pixel.

[0058] In this embodiment, at least one of the pixel upper electrode and the pixel lower electrode is a transparent electrode, such that the device may be transparent at both sides, or may be transparent at one side and non-transparent at the other side.

[0059] A material of the transparent electrode includes but is not limited to graphene, indium tin oxide, a carbon nanotube, a silver nanowire, a copper nanowire or a combination thereof; a material of a non-transparent electrode includes but is not limited to gold, silver, aluminum, copper or a combination thereof.

[0060] In this embodiment, light transmittance of the upper insulation layer or the lower insulation layer in a visible light range is greater than or equal to 80%, and a material thereof includes an organic insulation material, an inorganic insulation material, air or a combination thereof.

[0061] In this embodiment, thicknesses of the upper insulation layer and the lower insulation layer both range from 1 nm to 1000 ?m.

[0062] In this embodiment, the upper insulation layer and the lower insulation layer are both deposited on the surface of the ?LED chip. Optionally, the upper insulation layer and the lower insulation layer are deposited on surfaces of the pixel upper electrode and the pixel lower electrode respectively.

[0063] In this embodiment, a voltage waveform of the alternating electric field includes but is not limited to a sine wave, a triangle wave, a square wave, a pulse or a combination thereof. A voltage frequency of the alternating electric field ranges from 1 Hz to 1000M Hz.

[0064] In this embodiment, the ?LED light-emitting and display device is manufactured on a rigid material including glass or ceramics, or manufactured on a flexible material including P1.

[0065] FIG. 1 illustrates a single light emitting unit (pixel) structure in this embodiment, wherein the ?LED chip has a semiconductor junction with a single structure of P-type semiconductor layermulti-quantum wellN-type semiconductor layer. The ?LED3 is, for example, a GaN-based LED that is formed by an epitaxial method and includes an N-doped GaN layer 302, a P-doped GaN layer 301 and a multi-quantum well light emitting layer 303. A planar size of the ?LED3 is 20 ?m?20 ?m.

[0066] The pixel lower electrode 101 and the pixel upper electrode 201 are made of indium tin oxide, and planar sizes of the pixel lower electrode 101 and pixel upper electrode 201 are 60 ?m?60 ?m.

[0067] The lower insulation layer 102 is 100 nm in thickness, and made of aluminum oxide.

[0068] The upper insulation layer 202 is 100 nm in thickness, and made of aluminum oxide.

[0069] When an AC signal is applied between the pixel upper electrode 201 and the pixel lower electrode 101, the ?LED3 may emit light.

[0070] FIG. 2 illustrates another single light emitting unit (pixel) structure in this embodiment, wherein the ?LED chip has a compound semiconductor junction with a structure of P-type semiconductor materialmulti-quantum wellN-type semiconductor materialmulti-quantum wellP-type semiconductor material. The ?LED3 is, for example, a GaN-based LED that is formed by an epitaxial method, has a semiconductor pair junction structure, and includes a P-doped GaN layer 305, an N-doped GaN layer 302, a P-doped GaN layer 301 and multi-quantum well light emitting layers 303 and 304. A planar size of the ?LED3 is 20 ?m x 20 ?m.

[0071] The pixel lower electrode 101 and pixel upper electrode 201 are made of indium tin oxide, and planar sizes of the pixel lower electrode 101 and pixel upper electrode 201 are 60 ?m?60 ?m.

[0072] The lower insulation layer 102 is 100 nm in thickness, and made of aluminum oxide.

[0073] The upper insulation layer 202 is 100 nm in thickness, and made of aluminum oxide.

[0074] When an AC signal is applied between the pixel upper electrode 201 and the pixel lower electrode 101, the ?LED3 may emit light.

[0075] An embodiment of the present invention further provides a method for preparing the ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer as described above. Specifically, the method includes the following steps.

[0076] In S1, a self-supporting ?LED chip is obtained by growing an LED thin film structure that can generate a light source in three primary colors, i.e., red, green and blue on a surface of a semiconductor substrate and forming a ?LED chip pattern with a desired size by cutting and peeling.

[0077] In S2, a lower electrode array of a sub-pixel having three primary colors, i.e., red, green and blue, a thin film transistor driving array, and an electrical connection line therebetween are prepared on the surface of the substrate according to size and definition requirements of a display.

[0078] In S3, non-electrical contact between the PLED chip and a corresponding sub-pixel lower electrode is realized through an insulation layer preparation process by disposing red, green and blue ?LED chips on a surface of the lower electrode of the sub-pixel having three primary colors, i.e., red, green and blue correspondingly and respectively.

[0079] In S4, non-electrical contact between the ?LED chip and a corresponding sub-pixel upper electrode is realized through the insulation layer preparation process by disposing a pixel upper electrode and an electrical connection line thereof on the surface of the substrate provided with red, green and blue ?LED chips, so as to obtain a tLED light-emitting and display device without electrical contact, external carrier injection and mass transfer.

[0080] The operation of the tLED device is realized by applying an AC driving signal on the pixel upper electrode and the thin film transistor array.

[0081] In this embodiment, the substrate is a rigid material including glass or ceramics, or a flexible material including P1.

[0082] In this embodiment, in S3, the red, green and blue ?LED chips are disposed at desired positions respectively in a manner of ink-jet printing, screen printing, spin coating, brush coating, roll coating, chemical self-assembly, or electromagnetic self-assembly.

[0083] In this embodiment, in S3, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel lower electrode through the insulation layer preparation process specifically includes: realizing the non-electrical contact between the ?LED chip and a pixel lower electrode by firstly preparing an insulation layer on a surface of a pixel lower electrode array, and then disposing the ?LED chip on a surface of the insulation layer.

[0084] Optionally, in S3, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel lower electrode through the insulation layer preparation process specifically includes: realizing the non-electrical contact between the ?LED chip and a pixel lower electrode by wrapping an insulation layer on a surface of the ?LED chip, and then preparing the ?LED chip wrapped with the insulation layer on a surface of the pixel lower electrode.

[0085] In this embodiment, in S4, the pixel upper electrode and the electrical connection line thereof are prepared by lamination or growth.

[0086] In this embodiment, in S4, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel upper electrode through the insulation layer preparation process specifically includes: realizing the non-electrical contact between the tLED chip and the pixel upper electrode by firstly depositing an insulation layer on a surface of the ?LED chip, and then preparing the pixel upper electrode on a surface of the insulation layer.

[0087] Optionally, in S4, realizing the non-electrical contact between the ?LED chip and the corresponding sub-pixel upper electrode through the insulation layer preparation process specifically includes: realizing the non-electrical contact between the ?LED chip and the pixel upper electrode by firstly preparing an insulation layer on a surface of the pixel upper electrode, and then manufacturing the upper electrode and the insulation layer on a surface of the ?LED chip through a lamination technology.

[0088] Referring to FIG. 3, which illustrates a preparation method in FIG. 1. Specifically, the insulation layer 102 and the insulation layer 202 are firstly deposited on the surfaces of the pixel lower electrode 101 and the pixel upper electrode 201 through the following steps.

[0089] (1) The ?LED3 is, for example, a GaN-based LED that is formed by an epitaxial method and includes an N-doped GaN layer 302, a P-doped GaN layer 301 and a multi-quantum well light emitting layer 303. The planar size of the ?LED3 is 20 ?m?20 ?m.

[0090] Optionally, the ?LED3 may also be a GaAs-based LED formed by the epitaxial method.

[0091] (2) The patterned lower electrode substrate 1 and upper electrode substrate 2 are cleaned and processed respectively. The lower electrode 101 and the upper electrode 201 are made of indium tin oxide, and the planar sizes of the pixel lower electrode 101 and pixel upper electrode 201 are 60 ?m?60 ?m.

[0092] Optionally, the lower electrode 101 and the upper electrode 201 may also be made of a metal material such as gold, silver, copper and aluminum.

[0093] (3) The insulation layer 102 is deposited on the surface of the lower electrode 101 by magnetron sputtering, and the thickness of the insulation layer 102 is 100 nm.

[0094] Optionally, the insulation layer 102 may be made of a high-K dielectric material such as aluminum oxide and hafnium oxide; the insulation layer 102 may also be deposited on the surface of the lower electrode 101 by atomic layer deposition, or the like.

[0095] (4) The insulation layer 202 is deposited on the surface of the upper electrode 201 by magnetron sputtering, and the thickness of the insulation layer 202 is 100 nm.

[0096] Optionally, the insulation layer 202 may be made of a high-K dielectric material such as aluminum oxide and hafnium oxide; the insulation layer 202 may also be deposited on the surface of the upper electrode 201 by atomic layer deposition, or the like.

[0097] (5) The ?ED3 is transferred to the surface of the lower electrode substrate 1 through a ?LED array preparation technology, such that the ?LED3 is located on the surface of the insulation layer 102.

[0098] Optionally, the ?LED array preparation technology includes ink-jet printing, screen printing, spin coating, brush coating, roll coating, chemical self-assembly, electromagnetic self-assembly, and the like.

[0099] (6) The upper electrode substrate 2 is assembled on the lower electrode substrate 1, such that the ?LED3 is located between the insulation layer 102 and the insulation layer 202. When an AC signal is applied between the upper electrode 201 and the lower electrode 101, the ?LED3 may emit light.

[0100] Referring to FIG. 4, which illustrates another preparation method in FIG. 1. Specifically, the insulation layer 102 and the insulation layer 202 are firstly deposited on the surfaces of ?LED chips 301 and 302 through the following steps.

[0101] (1) The ?LED3 is, for example, a GaN-based LED that is formed by an epitaxial method and includes an N-doped GaN layer 302, a P-doped GaN layer 301 and a multi-quantum well light emitting layer 303. A self-supporting ?LED chip is obtained by peeling. The planar size of the ?LED3 is 20 ?m?20 ?m.

[0102] Optionally, the ?LED3 may also be a GaAs-based LED formed by the epitaxial method.

[0103] (2) The patterned lower electrode substrate 1 and upper electrode substrate 2 are cleaned and processed respectively. The lower electrode 101 and the upper electrode 201 are made of indium tin oxide, and the planar sizes of the lower electrode 101 and the upper electrode 201 are 60 ?m-60 ?m.

[0104] Optionally, the lower electrode 101 and the upper electrode 201 may also be made of a metal material such as gold, silver, copper and aluminum.

[0105] (3) The insulation layer 102 is deposited on a lower surface of the ?LED3 by atomic layer deposition, and the thickness of the insulation layer 102 is 100 nm.

[0106] (4) The insulation layer 202 is deposited on an upper surface of the ?LED3 by atomic layer deposition, and the thickness of the insulation layer 202 is 100 nm.

[0107] Optionally, the insulation layer 102 and the insulation layer 202 may be made of a high-K dielectric material such as aluminum oxide and hafnium oxide.

[0108] (5) The ?LED3 is transferred to the surface of the lower electrode substrate I through a PLED array preparation technology, such that the ?LED3 is located on the surface of the insulation layer 102.

[0109] Optionally, the ?LED array preparation technology includes ink-jet printing, screen printing, spin coating, brush coating, roll coating, chemical self-assembly, electromagnetic self-assembly, and the like.

[0110] (6) The upper electrode substrate 2 is assembled on the surface of the lower electrode substrate 1, such that the ?LED3 on which the insulation layer 102 and the insulation layer 202 are deposited is located between the upper electrode 201 and the lower electrode 101.

[0111] FIG. 5 to FIG. 7 illustrate a method for preparing a ?LED light-emitting and display device without electrical contact, external carrier injection and mass transfer in this embodiment. The ?LED device includes one or more light-emitting pixels, and the method includes the following steps.

[0112] (1) The ?LED3 is, for example, a GaN-based LED that is formed by an epitaxial method and includes an N-doped GaN layer 302, a P-doped GaN layer 301 and a multi-quantum well light emitting layer 303. A self-supporting PLED chip is obtained by peeling. The planar size of the ?LED3 is 20 ?m-20 ?m.

[0113] Optionally, the ?LED3 may also be a GaAs-based LED formed by the epitaxial method.

[0114] (2) As shown in FIG. 5, a patterned indium tin oxide (ITO) pixel array 101, a thin film transistor array 103 and an electrode connection line array 104 thereof are prepared on the surface of the lower substrate I through the conventional processes of preparing the patterned ITO electrode, the thin film transistor array and the electrode connection line. A size of the IT) pixel electrode 101 is 60 ?m?60 ?m.

[0115] (3) The insulation layer 102 is deposited on a surface of the ITO pixel array 101 by atomic layer deposition, and the thickness of the insulation layer 102 is 100 nm.

[0116] Optionally, the insulation layer 102 and the insulation layer 202 may be made ofa high-K dielectric material such as aluminum oxide and hafnium oxide.

[0117] (4) As shown in FIG. 6, the ?LED3 is transferred to the surface of the lower electrode substrate I through a ?LED array preparation technology, such that the ?LED3 is located on the surface of the insulation layer 102.

[0118] Optionally, the ?LED array preparation technology includes ink-jet printing, screen printing, spin coating, brush coating, roll coating, chemical self-assembly, electromagnetic self-assembly, and the like.

[0119] (5) The insulation layer 202 is deposited on the surface of the upper substrate electrode 201 by atomic layer deposition, and the thickness of the insulation layer 202 is 100 nm.

[0120] (6) As shown in FIG. 7, the upper electrode substrate 2 and the lower electrode substrate 1 are assembled, such that the ?LED3 is located between the insulation layer 102 and the insulation layer 202. When an AC signal is applied between the upper electrode 201 and the lower electrode 101, the ?LED3 may emit light.

[0121] The foregoing descriptions are merely preferred embodiments of the present invention but are not intended to limit the present disclosure in other forms. Any person skilled in the art may change or modify the technical content disclosed above into equivalent embodiments with equivalent changes. However, any simple modifications, equivalent changes and variations made to the above embodiments without departing from the content of the technical solution of the present invention based on the technical essence of the present invention shall be encompassed in the scope of protection of the present invention.