BONDING WIRE FOR SEMICONDUCTOR PACKAGE

Abstract

Provided is a bonding wire for a semiconductor package, which includes an insulating layer formed on the outer surface of a core portion by a thin layer deposition method, so that the occurrence of a short-circuit during wire bonding is fundamentally prevented and bondability is improved. The bonding wire for a semiconductor package comprises: a core portion formed of a conductive metal; and an insulating layer formed on the outer surface of the core portion by a thin layer deposition method.

Claims

1. A bonding wire for a semiconductor package comprising: a core portion formed of a conductive metal; and an insulating layer formed on an outer surface of the core portion by a thin layer deposition method.

2. The bonding wire according to claim 1, wherein the core portion is of a circular shape having a cross-sectional diameter of 1 ?m to 10,000 ?m.

3. The bonding wire according to claim 1, wherein the core portion is formed of any one of copper, gold, silver, and aluminum, or comprises palladium (Pd) alloyed to an outer surface of any one of copper, gold, silver, and aluminum.

4. The bonding wire according to claim 1, wherein the insulating layer is formed to have a thickness of 1 nm to 1,000 nm by an atomic layer deposition method.

5. The bonding wire according to claim 1, wherein the insulating layer is an oxide layer containing any one of aluminum, zinc, titanium, and silicon.

6. The bonding wire according to claim 1, wherein the insulating layer is any one of Al.sub.2O.sub.3, ZnO.sub.2, TiO.sub.2, and SiO.sub.2.

7. The bonding wire according to claim 1, wherein the thin layer deposition method is any one selected from among an atomic layer deposition method, a chemical vapor deposition method, and a sputtering method.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0015] FIG. 1 is a schematic cross-sectional view of a bonding wire for a semiconductor package according to one embodiment of the present invention.

BEST MODE

[0016] Hereinafter, a specific embodiment of the present invention will be described in detail with reference to the accompanying drawing.

[0017] As shown in FIG. 1, a bonding wire 100 for a semiconductor package according to this embodiment includes a core portion 110 and an insulating layer 120.

[0018] First, the core portion 110 corresponds to the overall appearance shape of the bonding wire 100 for a semiconductor package according to this embodiment, and preferably has a circular cross-section. In addition, the core portion 110 is formed of a metal having excellent electrical conductivity, and has a cross-sectional diameter of about 10 ?m to 50 ?m. In this case, it is preferable that the cross-sectional diameter of the core portion 110 is 1 ?m to 10,000 ?m.

[0019] Meanwhile, in this embodiment, the core portion 110 may be formed of any one of copper (Cu), gold (Au), silver (Ag), aluminum (Al), which is a metal having excellent electrical conductivity, or may include palladium (Pd) alloyed to the outer surface of any one of copper (Cu), gold (Au), silver (Ag), and aluminum (Al). In particular, in this embodiment, the core portion 110 is preferably formed of copper or silver.

[0020] Next, as shown in FIG. 1, the insulating layer 120 is formed on the outer surface of the core portion 110 by a thin layer deposition method, and is a component having electrical insulating properties. As used herein, the term thin layer deposition method refers to a deposition method capable of uniformly forming a thin insulating layer having a thickness of 1 to 1,000 nm. For example, the insulating layer 120 is formed by an atomic layer deposition method, a chemical vapor deposition method, or a sputtering method, and has electrical insulating properties.

[0021] In this embodiment, the insulating layer 120 is preferably formed to have a very small thickness of 1 nm to 30 nm, more preferably 5 nm to 10 nm, by an atomic layer deposition method. Coating the entire surface of the core portion 110 with the insulating layer having a uniform small thickness may be performed by an atomic layer deposition method.

[0022] In addition, in this embodiment, the insulating layer 120 is preferably an oxide layer containing any one of aluminum (Al), zinc (Zn), titanium (Ti), and silicon (Si). Thus, the insulating layer 120 is preferably any one of Al.sub.2O.sub.3, ZnO.sub.2, TiO.sub.2, and SiO.sub.2.

MODE FOR INVENTION

[0023] Meanwhile, the bonding wire 100 for a semiconductor package according to this embodiment may also include: the core portion 110; the insulating layer 120; and a buffer layer (not shown in the FIGURE) between the core portion 110 and the insulating layer 120.

INDUSTRIAL APPLICABILITY

[0024] According to the present invention, it is possible to produce a bonding wire which is not likely to cause a short circuit during packaging or use, and in particular, the bonding wire has improved bondability during a bonding operation, and thus may be used in the semiconductor industry.