KEY STRUCTURE
20230014686 · 2023-01-19
Inventors
- Lei-Lung Tsai (Taipei, TW)
- Sheng-Fan Chang (Taipei, TW)
- Che-An Li (Taipei, TW)
- Chang-Huan Shen (Taipei, TW)
Cpc classification
H01H13/7065
ELECTRICITY
H01H13/704
ELECTRICITY
International classification
Abstract
A key structure includes a membrane circuit board, an elastic element and a high impedance layer. The membrane circuit board includes a lower plate, an upper plate, a spacer plate and a circuit layer. The upper plate is located over the lower plate. The upper plate has an opening through the upper plate. The spacer plate is arranged between the lower plate and the upper plate. The circuit layer is arranged between the spacer plate and the upper plate. The elastic element is disposed on the membrane circuit board and substantially aligned with opening. The high impedance layer is disposed on a bottom surface of a bottom part of the elastic element and disposed within the opening of the upper plate. The high impedance layer is in contact with a part of the circuit layer.
Claims
1. A key structure, comprising: a membrane circuit board comprising a lower plate, an upper plate, a spacer plate and a circuit layer, wherein the upper plate is located over the lower plate, and the upper plate has an opening through the upper plate, wherein the spacer plate is arranged between the lower plate and the upper plate, and the circuit layer is arranged between the spacer plate and the upper plate; an elastic element disposed on the membrane circuit board and substantially aligned with the opening; and a high impedance layer disposed on a bottom surface of a bottom part of the elastic element and disposed within the opening of the upper plate, wherein the high impedance layer is in contact with a part of the circuit layer.
2. The key structure according to claim 1, wherein the high impedance layer is embedded in the circuit layer.
3. The key structure according to claim 1, wherein the circuit layer has a perforation exposing a part of the spacer plate, wherein the high impedance layer is disposed within the perforation of the circuit layer and in contact with the exposed part of the spacer plate.
4. The key structure according to claim 1, wherein the high impedance layer is in contact with a top surface of the part of the circuit layer.
5. The key structure according to claim 1, wherein an impedance value of the high impedance layer is in a range between 2,000 ohms and 6,000 ohms.
6. The key structure according to claim 1, wherein the high impedance layer is made of carbon ink material.
7. The key structure according to claim 1, wherein the elastic element further comprises an edge part connected with the bottom part of the elastic element and disposed on the upper plate of the membrane circuit board, wherein a bottom surface of the edge part is at a level higher than the bottom surface of the bottom part.
8. The key structure according to claim 1, wherein a vertical projection area of the elastic element is larger than a vertical projection area of the opening.
9. The key structure according to claim 1, wherein the high impedance layer is formed on the bottom surface of the bottom part of the elastic element.
10. The key structure according to claim 1, wherein the circuit layer is formed on a top surface of the spacer plate.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0019]
[0020]
[0021]
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0022] The present invention will now be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
[0023] As mentioned in the prior art, the ghost key phenomenon may occur on the existing keyboards. For avoiding the ghost key phenomenon, the keyboard device is further equipped with plural diodes near the corresponding key intersections. However, the arrangement of the diodes is costly, and the fabricating process is very complicated. Therefore, there is a need of providing a keyboard device capable of avoiding the ghost key phenomenon. Particularly, the present invention provides a key structure capable of avoiding the ghost key phenomenon in order to overcome the drawbacks of the conventional technologies. Some examples of the key structure of a keyboard device will be described as follows.
[0024] The keyboard device comprises plural key structures.
[0025] Please refer to
[0026] The spacer plate 113 is arranged between the lower plate 111 and the upper plate 112. In an embodiment, the spacer plate 113 is made of polycarbonate (PC), polyethylene terephthalate (PET), polymethylmethacrylate (PMMA), polyimide (PI) or any other appropriate material.
[0027] As shown in
[0028] Please refer to
[0029] The elastic element (also referred as an elastomer) 120 is disposed on the membrane circuit board 110 and substantially aligned with the opening 112a. In this context, the term “two components are substantially aligned with each other” indicates that the projection regions of two components along the vertical direction (i.e., along the thickness directions of the components) are completely overlapped or nearly completely overlapped. In other words, the projection region of the elastic element 120 and the projection region of the opening 112a along the vertical direction are completely or nearly completely overlapped with each other. Preferably but not exclusively, the elastic element 120 is made of non-conductive elastic material such as rubber or silicone. In an embodiment, the vertical projection area of the elastic element 120 is larger than the vertical projection area of the opening 112a.
[0030] As shown in
[0031] In an embodiment, the elastic element 120 further includes an edge part 121p connected with the bottom part 121b and disposed on the upper plate 112. Particularly, the edge part 121p is the outermost portion of the elastic element 120. The edge part 121p is arrange around the bottom part 121b. In an embodiment, the bottom surface of the edge part 121p is at the level higher than the bottom surface of the bottom part 121b. In other words, there is a height difference between the edge part 121p and the bottom part 121b. Preferably but not exclusively, the top surface of the edge 121p and the top surface of the bottom part 121b are coplanar with each other.
[0032] Please refer to
[0033] Please refer to
[0034] As shown in
[0035] The impedance value of the high impedance layer 130 is higher than the impedance value of the circuit layer 114. In an embodiment, the impedance value of the high impedance layer 130 is in the range between 2,000 ohms and 6,000 ohms. In an embodiment, the high impedance layer 130 is made of carbon ink material or any other appropriate high-impedance material. In an embodiment, the impedance value of the circuit layer 114 is in the range between 200 ohms and 450 ohms. In an embodiment, the impedance value of the high impedance layer 130 is 10 to 30 times the impedance value of the circuit layer 114. In practice, the thickness and size of the high impedance layer 130 may be adjusted. Consequently, the impedance value can comply with the practical requirements.
[0036] As shown in
[0037] In an embodiment, the high impedance layer 130 is substantially aligned with the bottom part 121b of the elastic element 120. In other words, the projection region of the high impedance layer 130 and the projection region of the opening 112b of the elastic element 120 along the vertical direction are completely or nearly completely overlapped with each other. Preferably but not exclusively, the high impedance layer 130 has a closed shape (e.g., ring-shaped) from a top viewpoint.
[0038] In some embodiments, the high impedance layer 130 is formed on the bottom surface of the bottom part 121b of the elastic element 120. In an embodiment, the high impedance layer 130 is formed on the bottom surface of the bottom part 121b of the elastic element 120 by using a spray coating method, a printing method or any appropriate method. Since the high impedance layer 130 is formed on the bottom part 121b of the elastic element 120, it is not necessary to perform two printing procedures. In the two printing procedures, the circuit layer is formed by using the first printing procedure, and the high impedance layer is formed by using the second printing procedure. Since the two printing procedures are not required, it will not face the test of the printing tolerance and processing precision. Consequently, the quality of the finished product is enhanced.
[0039] Please refer to
[0040]
[0041] While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all modifications and similar structures.