ETCHING SOLUTION AND ETCHING METHOD FOR GOLD OR GOLD ALLOY

Abstract

It is known that when etching gold films using etching solutions containing iodine and iodide, N-methyl-2-pyrrolidinone (NP) is added to improve the etching solution's wettability, microfabrication property, and solution life. However, in recent years, the use of NMP has been regulated due to its adverse effects on human health. The present invention provides an etching solution and etching method for gold film that improves wettability, microfabrication property, and solution life without containing NP. In order to address the problem of the prior art, the present invention provides etching solutions and etching methods for gold films that improve wettability, microfabrication property, and liquid life without NMP, characterized by the inclusion of a specific organic solvent in the etching solution containing iodine and iodide.

Claims

1. An etching solution for gold or gold alloy, comprising: iodine, iodide, organic solvent and water, wherein the organic solvent is one or more selected from the group consisting of 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, ethylene glycol, propylene glycol, diethylene glycol, 1,2-ethanediol, 1,4-butanediol and 2,3-butanediol.

2. The etching solution as claimed in claim 1, wherein the organic solvent is 3-methoxy N,N-dimethylpropanamide.

3. The etching solution as claimed in claim 1, wherein the etching solution is free of N-methyl-2-pyrrolidinone.

4. The etching solution as claimed in claim 1, wherein the iodide is potassium iodide.

5. A method for etching a gold film formed on a substrate, comprising immersing the substrate in the etching solution as claimed in claim 1.

6. The etching solution as claimed in claim 2, wherein the etching solution is free of N-methyl-2-pyrrolidinone.

7. The etching solution as claimed in claim 2, wherein the iodide is potassium iodide.

8. The etching solution as claimed in claim 3, wherein the iodide is potassium iodide.

9. A method for etching a gold film formed on a substrate, comprising immersing the substrate in the etching solution as claimed in claim 2.

10. A method for etching a gold film formed on a substrate, comprising immersing the substrate in the etching solution as claimed in claim 3.

11. A method for etching a gold film formed on a substrate, comprising immersing the substrate in the etching solution as claimed in claim 4.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] FIG. 1 is a graph showing the etching rate of gold film in an etching solution containing NMP or 3-methoxy-N,N-dimethylpropanamide.

[0022] FIG. 2 is a graph showing the contact angle on a bare silicon substrate for a solution containing NMP or 3-methoxy-N,N-dimethylpropanamide.

[0023] FIG. 3 is a graph showing the surface condition of gold bumps when immersed in an etching solution containing NMP or 3-methoxy-N,N-dimethylpropanamide.

[0024] FIG. 4 is a graph showing the appearance of gold bumps when immersed in an etching solution containing 3-methoxy-N,N-dimethylpropanamide, 1,4-butanediol, or diethylene glycol.

DETAILED DESCRIPTION OF THE PREFERRED EXAMPLES

[0025] The following is a detail description of the present invention.

[0026] An etching solution for gold or gold alloy of the present invention comprises iodine, iodide, organic solvent and water.

[0027] The iodides are not particularly limited and include, for example, potassium iodide, sodium iodide, ammonium iodide, rubidium iodide, cesium iodide, magnesium iodide, calcium iodide, strontium iodide, zinc iodide, cadmium iodide, mercury(II) iodide, and lead(II) iodide, and one or more of these can be used. Potassium iodide, sodium iodide, and ammonium iodide are especially preferred as iodides in terms of water solubility, price, ease of handling, and toxicity.

[0028] The content of iodine in the iodine-based etching solution is not limited, but can be from 1 to 1000 mM, for example. Preferably, it is 10 to 200 mM. The content of iodide in the iodine etching solution is not particularly limited, but can be, for example, from 1 to 3000 mM. Preferably, it is from 150 to 1500 mM. The ratio of the content of iodine to iodide (molar concentration ratio, iodine:iodide) is not particularly limited, but preferably 1:3 to 1:10, and even more preferably 1:5 to 1:10.

[0029] The organic solvent used in the present invention are capable of suppressing the etching rate of gold or gold alloy films, have excellent wettability, have gold surface smoothing ability, are effective in suppressing the amount of side etching, and suppress the volatilization of iodine. Specifically, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, ethylene glycol, propylene glycol, diethylene glycol, 1,2-ethanediol, 1,4-butanediol and 2,3-butanediol; preferably 1,4-butanediol, ethylene glycol, 3-methoxy-N,N-dimethylpropanamide, and more preferably 3-methoxy-N,N dimethylpropanamide.

[0030] The content of organic solvents in the etching solution is not limited, and it is preferable to adjust the amount used according to the type of organic solvent used. Generally, a range of 1 to 99% by volume can be used, preferably 5 to 50% by volume, and more preferably 10 to 40% by volume. For example, if the additive is N,N-dimethylpropanamide, the amount used is preferably 10-30% by volume, more preferably 15-25% by volume.

[0031] The etching solution also contains water. The content of water in the etching solution is not limited and can be, for example, the residual portion of other components. For example, the water content can be 1 to 99% by volume, preferably 60 to 90% by volume.

[0032] The etching solution described above is used to etch gold and gold alloys. Gold alloys include, for example, gold alloys with palladium, magnesium, aluminum, titanium, manganese, iron, cobalt, nickel, molybdenum, tungsten, platinum, silver, copper, etc. The etching solution is applicable to a combination of one or more of these. In the gold alloy, it is preferable that the gold content is 60% or more by weight and it is more preferable that the gold content be 80% or more by weight.

[0033] Etching conditions using the etching solution of the present invention are not limited, and can be performed, for example, according to the conditions of known etching methods.

[0034] As a method for contacting the etching target with the etching solution, there is a dipping method in which a container is filled with an iodine-based etching solution and the etching target is immersed. At that time, it is preferable to oscillate the etching object or forcefully circulate the iodine etching solution in the container. This allows the etching solution to be etched uniformly. The spray method, in which iodine etching solution is sprayed onto the etched object, or the spin method, in which iodine etching solution is discharged from a nozzle onto the spinning etched object, may also be used. These may also be used in combination with the dip method. The etching time is not limited, and can be from 1 to 60 minutes. Also, the etching temperature (iodine etching solution temperature for the dip method, or iodine etching solution temperature or etching object temperature for the spray and spin methods) is not limited, and may be, for example, 20 to 50 C. In this example, the temperature of the iodine etching solution, etching object, etc. may be adjusted by heating means such as a heater or cooling means, if necessary.

[0035] The present invention also relates to a method for etching a gold film or gold alloy film using the etching solution described above, and a method for manufacturing semiconductor materials formed by said method. Semiconductor materials formed by the above-mentioned method include wiring materials, bumps, and the like. The present invention has been described in detail based on suitable examples. However, the invention is not limited thereto, and each configuration can be replaced with any one that can perform the same function, or any configuration can be added.

EXAMPLES

[0036] The present invention will be explained more specifically with reference to the examples and comparative examples below, but the present invention is not intended to be limited to these examples and various modifications can be made without deviating from the technical spirit of the present invention.

Comparative Example 1 to 6 and Example 1 to 7

[0037] An aqueous solution of 0.079M iodine and 0.60M potassium iodide was used as the standard solution, and an etching solution was prepared by adding organic solvent to this standard solution. Next, a 22 cm Ni specimen was electrolytically plated with 3 m thick gold, and immersed in the aforementioned etching solution at a solution temperature of 30 C. stirred at approximately 200 rpm for 1 minute to etch. The specimen was rinsed with ultrapure water, dried with nitrogen gas, and the etching rate was calculated by the gravimetric method. The results are shown in table 1 and FIG. 1.

TABLE-US-00001 TABLE 1 Etching rate of gold film Potassium Organic Iodine iodide Solvent Etching concen- concen- Organic Content rate tration tration Solvents (vol %) (nm/min.) comparative 0.079M 0.60M none 0 440 example 1 comparative NMP 10 420 example 2 comparative 20 385 example 3 comparative 30 346 example 4 comparative 40 275 example 5 comparative 50 155 example 6 example 1 1,4-butangiol 20 323 example 2 diethylene 20 310 glycol example 3 3-methoxy-N, 10 424 example 4 N-dimethyl- 20 328 example 5 propanamide 30 290 example 6 40 237 example 7 50 141
From the results in table 1 and FIG. 1, it is observed that the etching rate can be controlled by 1,4-butanediol, diethylene glycol, and 3-methoxy-N,N-dimethylpropanamide without the use of NMP, and that these organic solvents have better etching control properties compared to NMP.

Comparative Example 7 to 12 and Example 8 to 14

[0038] An aqueous solution of 0.079 M iodine and 0.60 M potassium iodide was used as the standard solution, and a solution was prepared by adding organic solvent to this standard solution. Bare silicon substrate were treated with 100 dilute hydrofluoric acid solution for 1 minute, rinsed with ultrapure water, and dried with nitrogen gas. The contact angle of 1 l of the above solution on the bare silicon substrate was measured using a contact angle meter (Model CA-X150 manufactured by Kyowa Surface Science Co.). The results are shown in table 2 and FIG. 2.

TABLE-US-00002 TABLE 2 Contact angle Organic Potassium Solvent Iodine iodide Content Contact concentration concentration Organic Solvents (vol %) angle() comparative 0.079M 0.60M none 0 58.9 example7 comparative NMP 10 32.2 example8 comparative 20 33.2 example9 comparative 30 34.1 example10 comparative 40 34.8 example11 comparative 50 34.8 example12 example8 1,4-butangiol 20 40.5 example9 diethylene glycol 20 44.4 example10 3-methoxy-N,N-dimethylpropanamide 10 36.5 example11 20 38.7 example12 30 36.9 example13 40 38.7 example14 50 37
From the results in Table 2 and FIG. 2, it was observed that contact angles below 50 C. can be achieved by 1,4-butanediol, diethylene glycol and 3-methoxy-N,N-dimethylpropanamide without the use of NMP, i.e., excellent wettability.

Comparative Example 13 to 18 and Example 15 to 21

[0039] An aqueous solution of 0.079M iodine and 0.60M potassium iodide was used as the standard solution, and an etching solution was prepared by adding organic solvent to this standard solution. Then, a 11 cm gold bump substrate (gold bump (15 m)/gold sputter layer (210 nm)/TiW layer/Si layer) was immersed in the above etching solution at a liquid temperature of 30 C. stirred at about 200 rpm for the just etching time of gold sputter layer. The gold bump substrate was washed with ultrapure water, dried with nitrogen gas, and the surface smoothing ability and appearance of gold bumps were observed using a scanning electron microscope (SEM) (Hitachi High-Tech Corporation SU8200series). The results are shown in table 3 and FIGS. 3 and 4. The gold bump appearance in FIG. 4 was obtained by immersing the gold bump substrate in the etching solution of comparison examples 13 and example 15, 16, and 18 at a liquid temperature of 25 C. stirred at about 350 rpm for the just etching time of the gold sputter layer.

TABLE-US-00003 TABLE 3 Surface smoothing energy Organic Gold Bump Potassium Solvent surface Iodine iodide Content Smoothing concentration concentration Organic Solvents (vol %) energy comparative 0.079M 0.60M none 0 x example 13 comparative NMP 10 example 14 comparative 20 example 15 comparative 30 example 16 comparative 40 example 17 comparative 50 example 18 example 15 1,4-butangiol 20 example 16 diethylene glycol 20 example 17 3-methoxy-N,N-dimethylpropanamide 10 example 18 20 example 19 30 example 20 40 example 21 50 : Nearly no roughness on gold bump surface : Slightly improved gold bump surface roughness x: Rough gold bump surface
The results in table 3 and FIG. 3 confirm that 1,4-butanediol, diethylene glycol, and 3-methoxy-N,N-dimethylpropanamide have the same gold bump surface smoothing ability as NMP without the use of NMP.

Comparative Example 19 to 21 and Example 22 to 26

[0040] An aqueous solution of 0.027M iodine and 0.11M potassium iodide was used as the standard solution, and an etching solution was prepared by adding organic solvent to this standard solution. Then, a 21 cm sputter gold substrate (resist/gold sputter layer (50 nm)/Ti layer/Si layer) was etched by immersing it in the above etching solution at a liquid temperature of 25 C. stirred at about 200 rpm for 1.5 times the just etching time of the gold sputter layer. The sputtered gold substrate was washed with ultrapure water, dried with nitrogen gas, and the amount of side etching was observed using a scanning electron microscope (SEM) (Hitachi High-Tech Corporation SU8200series). The results are shown in table 4.

TABLE-US-00004 TABLE 4 Side etching amount Organic Potassium Solvent Iodine iodide Content Side etching concentration concentration Organic Solvents (vol %) amount (nm) comparative 0.027M 0.11M none 0 449 example 19 comparative NMP 10 484 example 20 comparative 20 198 example 21 example 22 1,4-butangiol 20 520 example 23 diethylene glycol 20 480 example 24 3-methoxy-N,N-dimethylpropanamide 10 411 example 25 20 225 example 26 25 90
The results in Table 4 confirm that 1,4-butanediol, diethylene glycol, and 3-methoxy-N,N-dimethylpropanamide can suppress the side etching amount without the use of NMP.

Comparative Example 22 to 23 and Example 27 to 28

[0041] A solution of 0.079 M iodine and 0.60 M potassium iodide was used as a standard solution and a solution was prepared by adding organic solvent to this standard solution, and the iodine volatilization inhibition ability was evaluated by redox titration using sodium thiosulfate solution at regular time intervals. The results are shown in Table 5.

TABLE-US-00005 TABLE 5 Iodine volatilization inhibition ability Organic Iodine Potassium Solvent volatilization Iodine iodide Content inhibiting concentration concentration Organic Solvents (vol %) ability comparative 0.079M 0.60M none 0 x example 22 comparative NMP 20 example 23 example 27 3-methoxy-N,N-dimethylpropanamide 20 example 28 25 : Iodine content change rate of 5% or less after 24 hours. : Iodine content change rate after 24 hours: 5% or more but less than 20%. x: Iodine content change rate of 20% or more after 24 hours.
The results in table 5 and FIG. 5 confirm that 1,4-butanediol, diethylene glycol, and 3-methoxy-N,N-dimethylpropanamide can inhibit iodine volatilization without the use of NMP.