METHOD AND RECONFIGURABLE INLINE SYSTEMS FOR PROTECTION FROM TRANSIENT ELECTROMAGNETIC ENERGY DISTURBANCE
20240079868 ยท 2024-03-07
Inventors
Cpc classification
H02H5/005
ELECTRICITY
H02H3/105
ELECTRICITY
H02H9/046
ELECTRICITY
H02H9/045
ELECTRICITY
H02H5/00
ELECTRICITY
G01R31/12
PHYSICS
International classification
H02H5/00
ELECTRICITY
G01R31/12
PHYSICS
Abstract
A method and system for suppressing EMP-induced voltage surges due to transient electromagnetic energy disturbance such as a detonation of a nuclear weapon at high altitude generating an EMP (HEMP) comprising E1, E2, and E3 component pulses. Surge protection assemblies are mounted inline, intermediate AC and DC distribution power lines and a plurality of electrical and electronic devices, powered by the lines. The inline mounting of the reconfigurable surge suppression system eliminates any time delay response of the plurality of protecting assemblies and the allowable voltage amplitude level of the protecting assemblies are selected and combined to achieve a predefined desired response time and protection level capacity to react to and mitigate the E1, E2, and E3 components of a complex multi-pulse EMP pulse generated by detonation of a nuclear weapon at high altitude (HEMP). The reconfigurable surge suppressing systems is interoperable with plurality of electrical interfaces.
Claims
1. A method for suppressing an electrical surge induced by a transient electromagnetic energy disturbance, such as an electromagnetic pulse (EMP) generated by a high-altitude nuclear weapon detonation (HEMP), from reaching electrical and electronic devices connected to an electrical power network (EPN), said method comprising: responding to a first overvoltage exceeding a first E1 predetermined threshold level induced by an E1 component of an electromagnetic pulse in said electrical power network (EPN) providing power to connected electrical and electronic devices associated with said EPN, said responding to a first overvoltage comprises limiting, absorbing, and shunting said first overvoltage within less than one nanosecond after said first overvoltage exceeds the first E1 predetermined threshold level so as to limit a level of said first overvoltage to a second E1 predetermined threshold level using a first transient surge suppressing assembly including transient voltage suppressors (TVSs), metal oxide varistors (MOVs), gas discharge tubes (GDTs), other solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs) and metamaterials, mechanical, electrical and ionization discharge devices (IDDs), and combinations thereof; responding to a second overvoltage exceeding a first E2 predetermined threshold level induced by an E2 component of an electromagnetic pulse in said EPN connected to said electrical and electronic devices associated with said EPN, said responding to a second overvoltage including limiting, absorbing, and shunting said second overvoltage so as to limit a level of said second overvoltage to a second E2 predetermined threshold level using a second transient surge suppressing assembly including TVSs, MOVs, GDTs, other solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs) and metamaterials, mechanical, electrical and IDDs, and combinations thereof; responding to a third overvoltage exceeding a first E3 predetermined threshold level induced by an E3 component of an electromagnetic pulse in said EPN connected to said electrical and electronic devices associated with said EPN, said responding to a third overvoltage including limiting, absorbing, and shunting said third overvoltage so as to limit a level of said third overvoltage to a second E3 predetermined threshold level using a third transient surge suppressing assembly including TVSs, MOVs, GDTs, other solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs) and metamaterials, mechanical, electrical and IDDs, and combinations thereof.
2. The method for suppressing an electrical surge as in claim 1, further comprising electrically connected said first, second, and third transient surge suppressing assemblies (TSSAs) to provide electrical power network (EMP) surge protection, respectively, intermediate the electrical and electronic devices associated with said EPN constitutes an inline insertion connection such that ability of said EPN to supply high-power alternating current (AC) and direct current (DC) is not altered.
3. The method for suppressing an electrical surge as in claim 1, wherein said inline insertion connection of said first, second, and third transient surge suppressing assemblies, respectively, form protective assemblies that do not cause interference with normal operation of electrical and electronic devices associated with said EPN.
4. The method for suppressing an electrical surge as in claim 1, wherein said inline insertion connection of said first, second, and third protective assemblies, respectively, do not cause mutual operational degradation when limiting, absorbing, and shunting, respectively.
5. The method for suppressing an electrical surge as in claim 1, further comprising mounting respective protective assemblies in a casing that is mounted inline of said EPN and connected electrical and electronic devices using interoperable hardware connections with matched voltage and current ratings and interface connections based on electrical code and standards.
6. The method for suppressing an electrical surge as in claim 1, wherein said first, second, and third protective assemblies, mounted in said casing, comprise transient surge suppressing assemblies (TSSAs) mounted on a printed circuit board (PCB) with direct electrical connections to high current capacity busbars and reconfigurable hardware interface connections, compose a surge suppression system (TSS) with reconfigurable interface for inline installation, comprising ability to connect to conductors and utilizing connectors, plugs, receptacles, and outlets specified by existing consumer and industrial electrical standards, emerging electrical connectors developed for new technology applications, and proprietary custom connectors.
7. The method for suppressing an electrical surge as in claim 6, wherein said first, second, and third protective assemblies compose said TSS embedded and sealed in said casing with electrically conductive, mutually insulated busbars with input and output connectors for direct inline connection to hot, neutral, and ground conductors of said EPN, respectively, using hardwiring interconnecting methods and wherein said casing has accessible inline fuses.
8. The method for suppressing an electrical surge as in claim 6, wherein said casing with hardware connections for reconfigurable interface is operable for direct inline use at the service entrance of residential, commercial, and industrial buildings, power distribution adapters and converters, at an endpoint of electric vehicle charging station, at an endpoint high-power electrical utility, and at a midspan electrical outlet for a utility appliance.
9. The method for suppressing an electrical surge as in claim 6, wherein said transient suppressing system (TSS) provides ability of two said TSSs with reconfigurable interface to be connected back-to-back in parallel configuration to double the inline energy surge suppressing capacity.
10. The method for suppressing an electrical surge as in claim 6, wherein said surge suppression system with inline installation using reconfigurable interface includes monitoring of power lines voltage and current conditions, grounding connection condition, and self-monitoring with status indicators using embedded visual, audible, and remote communication signals.
10. The method for suppressing an electrical surge as in claim 1, wherein each of said first, second, and third protecting assemblies includes a plurality of limiting, absorbing, and shunting type devices selected from groups including TVSs, MOVs, GDTs, IDDs, solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs), mechanical, and electronic and electrical components, and combinations thereof, scalable for voltage, current, and energy handling capacity.
11. The method for suppressing an electrical surge as in claim 10, wherein said first, second, and third protecting assemblies have varied response times and said predetermined threshold levels have values E1>E2>E3, respectively, and are operable to react to and suppress one of said E1, E2, and E3 component pulses of said HEMP, respectively.
12. The method for suppressing an electrical surge as in claim 1, wherein said first, second, and third protecting assemblies include components to protect against high voltage transients induced by intentional electromagnetic interference generated by directed energy weapons and electronic warfare systems.
13. A surge suppression system for mitigating and preventing electromagnetic energy surges induced in an electrical power network (EPN) by naturally occurring events, such as Coronal mass ejection (CME) and Geomagnetic disturbance (GMD), from reaching electrical and electronic devices associated with said EPN, said surge suppression system comprising: a first limiting, absorbing, and shunting assembly that includes TVSs, MOVs, GDTs, other solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs) and metamaterials, mechanical, electrical and IDDs, and combinations thereof that is operable to respond to a first overvoltage exceeding a first E1 predetermined threshold level induced by an E1 component pulse in an electrical power network (EPN); wherein said first limiting, absorbing, and shunting assembly is operable to mitigate said first overvoltage and responds to decrease the first E1 predetermined threshold level of said first overvoltage to a second E1 predetermined threshold level within one nanosecond after said first overvoltage is reached. a second limiting, absorbing, and shunting assembly including TVSs, MOVs, GDTs, other solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs) and metamaterials, mechanical, electrical and IDDs, and combinations thereof that is operable to respond to a second overvoltage exceeding a first E2 predetermined threshold level induced by an E2 component pulse in an EPN; wherein said second limiting, absorbing, and shunting device is operable to mitigate said second overvoltage and responds to decrease the level of said second overvoltage to a second E2 predetermined threshold level within less than one microsecond after said second over-voltage exceeds said second E2 predetermined threshold level of said second overvoltage; a third limiting, absorbing, and shunting assembly including TVSs, MOVs, GDTs, other solid state and nonlinear components based on semiconductors (i.e., Si, Ge), compound semiconductors (i.e., SiC, GaN, GaAs) and metamaterials, mechanical, electrical and IDDs, and combinations thereof that is operable to respond to a third overvoltage exceeding a first E3 predetermined threshold level induced by an E3 component pulse in an EPN; wherein said third limiting, absorbing, and shunting device is operable to mitigate said third overvoltage and responds to decrease the level of said third overvoltage to a second E3 predetermined threshold level within less than one second after said third overvoltage exceeds said second E3 predetermined threshold level of said third overvoltage.
14. The surge suppression system as in claim 13, wherein said first limiting, absorbing, and shunting assembly, said second limiting, absorbing, and shunting assembly, and said third limiting, absorbing, and shunting assembly are mounted in said casing and operable for inline direct hardware connection using reconfigurable interface to connect to hot, neutral, and ground conductors of an AC and positive and negative conductors of a DC EPN at an end point or at midspan of said EPN.
15. The surge suppression system as in claim 13, wherein said first, second, and third limiting, absorbing, and shunting assemblies have varied reaction times and said predetermined threshold levels have values E1>E2>E3, respectively, and are operable to react to said E1, E2, and E3 component pulses generated by naturally occurring CME and GMD, respectively.
16. The surge suppression system as in claim 13, wherein said first, second, and third limiting, absorbing, and shunting assemblies mounted in said casing, comprise transient surge suppressing assemblies (TSSAs) mounted on a printed circuit board (PCB) with direct electrical connections to high current capacity busbars, to minimize insertion losses, and dedicated screw terminals for cable conductors connections at each end of said high current capacity busbars, compose a TSS with reconfigurable interface for inline installation.
17. The surge suppression system as in claim 13, wherein said TSS with reconfigurable interface for inline installation is embedded and sealed in said casing with input and output cable glands with access and connections of electric power cable conductors to dedicated screw terminals at each end of said high current capacity busbars and has an additional, externally accessible electrical power ground connector terminal for direct grounding connection.
18. The surge suppression system as in claim 17, wherein said access and connections of cable conductors to dedicated screw terminals at each end of said high current capacity busbars are used for direct inline connection to electric power cable conductors and wherein any additional cable conductors for signaling and communications present in said cable assembly are routed without any intermediate connections and interference.
19. The surge suppression system as in claim 17, wherein said input and output cable glands and said additional, externally accessible electrical power ground connector terminal are mounted on a single or multiple side panels of said casing as to facilitate inline installation of said surge suppression system.
20. The surge suppression system as in claim 17, wherein said access and connections of cable conductors to screw terminals at each end of said high current capacity busbars with mounted and electrically connected said TSS in said casing with said additional, externally accessible electrical power ground connector terminal and said cable glands housing electric power cables for direct inline connection using hardwiring methods are mechanically secured, physically sealed, electrically insulated, and waterproofed for submersible and underground installations.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0041] Illustrative embodiments of the invention are described in detail below with reference to the attached drawing figures, and wherein:
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DESCRIPTION OF THE PREFERRED EMBODIMENT
[0069] The subject matter of select embodiments of the invention is described with specificity herein to meet statutory requirements. But the description itself is not intended to necessarily limit the scope of claims. Rather, the claimed subject matter might be embodied in other ways to include different components, steps, or combinations thereof similar to the ones described in this document, in conjunction with other present or future technologies. Terms should not be interpreted as implying any particular order among or between various steps herein disclosed unless and except when the order of individual steps is explicitly described. The terms about, approximately, or other terms of approximation as used herein denote deviations from the exact value in the form of changes or deviations that are insignificant to the function.
[0070] The characteristics of an electromagnetic pulse (EMP), in general, and high-altitude nuclear EMP (HNEMP), in particular, is discussed in the context of traditional electrical environments and setups before described in detail and in context the fundamentals of the present invention regarding the protection of multiplicity of high power electrical and electronic systems.
[0071] As initially presented above and summarized in
[0072] The E1 component of the complex multi-pulse is produced when gamma radiation from the nuclear detonation knocks electrons out of the atoms in the upper atmosphere. The electrons begin to travel in a generally downward direction at relativistic speeds (i.e., at more than 90 percent of the speed of light). In the absence of a magnetic field, the displaced electrons would produce a large pulse of electric current vertically in the upper atmosphere over the entire affected area. However, the Earth's magnetic field acts on the electrons to change the direction of electron flow so that it is at a right angle to the geomagnetic field. This interaction of the Earth's magnetic field and the downward electron flow produces a very brief, but very high magnitude, electromagnetic pulse over the affected area.
[0073] The process of gamma rays knocking electrons from the atoms in the mid-stratosphere ionizes that region, causing it to become an electrically conductive ionized layer, that limits and blocks the further expansion of the electromagnetic signals and causing the field strength to saturate at about 50,000 volts per meter (50 kV/m). The strength of the E1 HEMP depends upon the altitude of the detonation of the nuclear device and the atmosphere conditions and to the intensity of the gamma rays produced by the weapon. of the more detailed explanations of the undergoing physical interactions are beyond the scope of this document and may be found elsewhere.
[0074] The interaction of the very rapidly moving negatively charged electrons with the magnetic field radiates a short duration, intense pulse of electromagnetic energy. The pulse typically rises to its peak magnitude in about five nanoseconds (5 ns) and decays within hundreds of nanoseconds (200 ns-500 ns, depending on the level of intensity used for measurement). The given values may vary based on location and distance to the blast point. According to the most recent IEC standard update, the E1 pulse has a rise time of 2.5 ns?0.5 ns (from 10% to 90% amplitude levels), reaches peak value of 50 kV/m in 5 ns, and has a pulse width at half maximum of 23 ns?5 ns (
[0075] Thus, the E1 component is a short-duration, intense electromagnetic pulse capable of inducing very high voltages in electrical conductors. That induced high voltage typically exceeds the breakdown voltage of common electrical system components such as those used in computers and communications equipment, degrading and/or destroying those components. Because the E1 component pulse occurs so quickly, most commonly available lightning surge protectors are unable to respond and suppress the surge induced into an electrical system by an E1 pulse.
[0076] The E1 component is further characterized in certain regulatory standards. The table in
[0077] The combined HEMP timeline based on analytical expressions is provided in IEC 61000-2-9 and is given in and has an infinite number of poles in frequency domain. To rigorously explore the models, the author of this application has developed software to interactively demonstrate and compare the different models. In addition to the published models (DEXP, QEXP, PEXP, and ERFC), three new models were developed based on Log-normal, Beta, and Gamma distributions. The software was used to visualize and study the characteristics of HEMP waveform models in time domain, frequency domain, and joint time-frequency domain.
[0078] The method and devices based on the method described in this invention are based on specifications listed in the Military and Civilian Standards and are developed accordingly for accurate description of E1, E2, and E3 pulse components of a HEMP. The standards are used to design and build test facilities to study the impact of HEMP effects and to design, implement, and evaluate the level of protection of devices built for mitigation of the effects. The author has developed software tools to generate and analyze the waveforms described in all publicly available standards. Theoretical and experimental exercises were conducted to investigate waveforms with parameters exceeding the current standards considering worst case scenarios.
[0079] The HEMP standards are derived by considering many possible waveforms in time and frequency domains. Mathematical models are created that best express the temporal and the spectral characteristics. The detection of E1 EMP is the most challenging, requiring ability to monitor the sensors' signals with sub-nanosecond resolution (10 s of picoseconds). The two models for the E1 HEMP given in and has an infinite number of poles in the frequency domain. The model waveforms are useful for testing, but they do not present with high fidelity the complexity of the real HEMP E-field waveforms.
[0080] The most critical aspects regarding the HEMP are its propagation speed, broad bandwidth, and high energy. Protection against the hazardous effects of HEMP E1 phase must be achieved in real time with fast response (2.5 ns rise time). It is followed by the E2 and E3 components of the HEMP. In this regard, an accurate detection of E1 can be used to activate robust isolation protection from the consecutive E2 and E3 phases. The E2 component of the pulse has many similarities to an electromagnetic pulse produced by lightning, although the electromagnetic pulse intensity induced by a very close-proximity lightning strike may be considerably larger than the magnitude of the E2 component of a nuclear HEMP (
[0081] Because of the similarities to lightning-caused electromagnetic pulses and the widespread availability of lightning protection technology, the E2 pulse is generally considered to be the easiest to protect against. However, because an EMP produced by a nuclear weapon comprises a complex multi-pulse (i.e., the E1, E2, and E3 components), the primary potential problem with the E2 component is the fact that it immediately follows an E1 component which likely has damaged any devices that were intended to protect against a lightning strike type surges and that could have potentially protected against an E2 component pulse alone. As noted in the United States EMP Commission's Executive Report of 2004, referring to the E2 component pulse, [I]n general, it would not be an issue for critical infrastructure systems since they have existing protective measures for defense against occasional lightning strikes. The most significant risk is synergistic, because the E2 component follows a small fraction of a second after the first component's insult, which has the ability to impair or destroy many protective and control features. The energy associated with the second component thus may be allowed to pass into and damage systems.
[0082] The E3 component of the complex multi-pulse is a pulse with a very long rise and fall times, long period of oscillations, and lasts tens to hundreds of seconds (
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[0088] As shown in
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[0091] In the proposed method and reconfigurable systems based on the method, the need for low insertion loss is addressed by providing input to output high current capacity conductors, busbars 123, with very low resistance (m?). When necessary, the addition of stacked busbars 123 is provided for the reconfigurable system to further decrease the resistance and insertion losses for high current, high power applications using inline TSS installation.
[0092] On the left bottom corner of
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[0094] TSS subassembly 140 contains the transient surge suppressing assemblies (TSSAs, referred to in
[0095] The TSS subassembly 140 is connected to the busbars 139 using connectors 141. In the top right corner of
[0096] In general, the TSSs based on the proposed method for reconfigurable systems is a symmetric system with respect to their input and output. The symmetry implies that input and output are equivalent for inline installation if the 120 VAC lines L1, L2, and the neutral and ground power line conductors are properly connected to the designated busbars with respective screw terminals. In specific embodiments, the input and output are explicitly specified and properly marked.
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[0098] At the two ends of the busbars 153, the screw terminals 152 and 155 connect the power line conductors after the cables pass through the cable glands 151 and 156, respectively. The TSS (140 in
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[0101] The method and systems based on the described invention provides the ability to connect two TSSs in parallel at a single inline location on an electric power network (EPN) to protect the electrical and electronic devices connected to the EPN. The busbars 197 of the two TSSs 191 are separated by material media 193 and electrically connected using conducting connectors 198. The conductive connectors are displayed on the front side view of the parallel back-to-back configuration and are also displayed on the frontal view 195 of the parallel configuration shown on the right side in
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[0105] The three tables in
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[0107] The method in this invention also provides inline installation for applications with cables that have power and communication channels. In such applications the communication channels are routed in parallel to the enclosed TSS from the input to the output cable glands.
[0108] It should be apparent to those skilled in the art that many more modifications besides those already described are possible without departing from the inventive concepts herein. The inventive subject matter, therefore, is not to be restricted except in the spirit of the appended claims. Moreover, in interpreting both the specifications and the claims, all terms should be interpreted in the broadest possible manner consistent with the context. In particular, the terms comprise and comprising should be interpreted as referring to elements, components, or steps in a non-exclusive manner, indicating that the referenced elements, components, or steps may be present, or utilized, or combined with other elements, components, or steps that are not expressly referenced. It is understood that while certain forms of this invention have been illustrated and described, they are not limited thereto except insofar as such limitations are included in the following claims and allowable functional equivalents thereof.