Fabrication Technique For Wire Grid Polarizer

Abstract

A proposed fabrication technique for a polarization-absorbing wire grid polarizer avoids the need to etch through the multilayer stack of materials to form the grid structure. Initial reflective metal and dielectric buffer layers are patterned and etched in a conventional manner to create the desired grid topology. A small-angle coating process is then used to complete the fabrication process by first coating the top surface of the patterned dielectric with a polarization-absorbing metal. A second coating process is used to cover the created metal coating with a dielectric cladding material. Maintaining a small angle of incidence between the coating source and the wire grid structure ensures that top portions of the grid are suitably covered to create the desired multilayer wire configuration.

Claims

1. A method of manufacturing a polarization-absorbing wire grid polarizer, comprising: providing an optically transparent substrate, the optically transparent substrate having a top major surface; depositing a layer of reflective metal to cover the top major surface of the optically transparent substrate; depositing a layer of dielectric buffer material to cover the deposited layer of reflective metal; patterning and etching the combination of the deposited layer of dielectric buffer material and the layer of reflective material to create a plurality of wire grid stubs; using a small angle of incidence, coating a top portion of each wire grid stub of the plurality of wire grid stubs with a polarization-absorbing metal material, creating a metal-coated surface on each wire grid stub; and using the small angle of incidence, coating the metal-coated surface on each wire grid stub with a dielectric material to form a dielectric cladding as a top layer of the wire grid polarizer.

2. The method of claim 1 wherein the small angle of incidence is no greater than about 10?.

3. The method of claim 1 wherein the coating steps utilize a sputter deposition process.

4. The method of claim 1 wherein the coating steps utilize a vacuum evaporation coating process.

5. The method of claim 1 wherein in the step of depositing a layer of reflective metal, the reflective metal is selected from the group consisting of: aluminum, silver, copper, chromium, germanium, titanium, iron, and silicon.

6. The method of claim 1 wherein in the step of depositing a layer of dielectric buffer material, the dielectric buffer material comprises a metal oxide.

7. The method of claim 6, wherein the metal oxide is selected from the group consisting of: SiO.sub.2, Ta.sub.2O.sub.3, Al.sub.2O.sub.3, and MgF.sub.2.

8. The method of claim 1 wherein in the step of coating the plurality of wire stubs with a polarization-absorbing metal, the polarization-absorbing metal is selected from the group consisting of: aluminum, silver, copper, chromium, germanium, titanium, iron, and silicon.

9. The method of claim 1 wherein in the step of coating the metal-coated wire stubs with a dielectric cladding material, the dielectric cladding material comprises a metal oxide.

10. The method of claim 9, wherein the metal oxide is selected from the group consisting of: SiO.sub.2, Ta.sub.2O.sub.3, Al.sub.2O.sub.3, and MgF.sub.2.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Referring now to the drawings, where like numerals represent like parts in several views:

[0009] FIG. 1 is a side view of a polarization absorbing wire grid polarizer;

[0010] FIG. 2 is an isometric view of the wire grid polarizer of FIG. 1;

[0011] FIG. 3 depicts a structure as created during a prior art process used to form the wire grid polarizer of FIG. 1, including the deposition of several layers over a substrate of optically transparent material and the inclusion of a patterning layer on the top of these several layers;

[0012] FIG. 4 depicts a structure as initially created in the disclosed method of forming a polarization absorbing wire grid polarizer, including forming reflective metal and dielectric buffer layers;

[0013] FIG. 5 shows a following step in the disclosed method, illustrating the etching of the dielectric buffer layer to exhibit the desired wire grid topology;

[0014] FIG. 6 illustrates the next step in the disclosed process, where the wire grid pattern is transferred to the reflective metal layer using an etch process;

[0015] FIG. 7 shows a following step in the disclosed formation process, in particular illustrating the use of a small-angle coating process to deposit a layer of polarization absorbing metal on the individual wires forming the grid;

[0016] FIG. 8 depicts a final step in the disclosed formation process, shown as a small-angle coating process used to cover the tops of the individual wires of FIG. 8 with a dielectric cladding material; and

[0017] FIG. 9 shows a polarization absorbing metal wire grid polarization formed using the disclosed method.

DETAILED DESCRIPTION

[0018] Wire grid polarizers have a variety of uses, including but not limited to, polarization beam splitters (e.g., broadband splitters), display devices (such as 3D/LCD projectors and vehicle heads-up display apparatus), and image sensors 9 such as polarization imaging for biomedicine applications). FIG. 1 is a cut-away side view of a polarization absorbing wire grid polarizer 10, which comprises a plurality of parallel, elongated wires 12 that are disposed on an optically transparent substrate 14. Substrate 14 may comprise glass, quartz, fused silica or the like. FIG. 2 is an isometric view of wire grid polarizer 10 of FIG. 1, clearly showing the parallel, elongated topology of the plurality of wires 12 as formed on substrate 14. Referring to both FIGS. 1 and 2, the various dimensions associated with the structure of wire grid polarizer 10 are shown, including the width w and height d of each wire 12i. The center-to-center spacing between adjacent wires 12, referred to as the pitch and shown as A, is a factor in achieving the desired polarization splitting of an unpolarized incoming beam. Indeed, it is important for all of these dimensions to be well-controlled in order to provide the desired split between polarization states with a high extinction ratio, and operable across a relatively wide wavelength range of interest.

[0019] In this case of creating a polarization-absorbing wire grid polarizer, wires 12 comprise a stacked, multilayer form of alternating metal and dielectric materials, which is necessary in order to allow for any light propagating along the unwanted polarization state to be absorbed in a manner that minimizes any further propagating of this polarization state. In particular, wires 12 are shown as comprising a multilayer stack formed of a reflective metal 20 covered by a dielectric buffer 22. In the formation of polarization absorbing wire grid polarizer, a polarization-absorbing metal 24 is disposed over dielectric buffer 22, with a dielectric cladding 26 disposed over metal 24 as the top layer of the stacked, multilayer structure. In particular, metal 24 comprises a polarization absorbing material that is selected to absorb one polarization of a propagating optical beam (for example, the TE polarization) and allow the orthogonal polarization (e.g., the TM polarization) to continue to propagate through optically transparent substrate 14. Materials suitable for use as reflective metal 20 and polarization-absorbing metal 24 include, but are not limited to, aluminum, silver, copper, chromium, germanium, titanium, iron, and silicon. Possible material choices for dielectric buffer 22 and cladding 26 comprise metal oxides, such as SiO.sub.2, Ta.sub.2O.sub.3, Al.sub.2O.sub.3, MgF.sub.2, and the like.

[0020] FIG. 3 depicts a prior art process typically used in forming polarization absorbing wire grid polarizer 10. In particular, continuous layers of each of the enumerated materials described above are deposited to completely coat a top major surface 14S of substrate 14. That is, a full layer 20L of reflective metal is first deposited to cover substrate 14, followed by a layer 22L of dielectric buffer material, with metal polarization absorbing layer 24L and dielectric cladding layer 26L also formed to completely cover the underlying structure. Once all of these layers are formed, a patterning layer defining the topology of the desired wire grid layout (in terms of pitch, number of wires, width w, and the like as shown in FIGS. 1 and 2) is disposed over cladding layer 26L. Following this, a multi-step etch process is used to remove the exposed portions of the individual layers, where each material requires a different etchant as a result of the alternating arrangement of metal and dielectric layers. That is, the etchant used to remove exposed regions of cladding layer 26L is not capable of removing the exposed regions of metal polarization absorbing layer 24L, etc. As the number of etched layers increases, the yield of acceptable devices has been found to rapidly reduce, leading to increases in the cost of the final product.

[0021] Disclosed herein is an improved process of forming a polarization-absorbing wire grid polarizer that eliminates the need to perform the multiple etching steps that directly impact the product yield. Instead, a combination of etching and small-angle coating is used to form the wire grid topology. FIG. 4 illustrates an initial step in the disclosed process, specifically directed to forming metal reflective layer 20L and dielectric buffer layer 22L over substrate 14. Dielectric buffer layer 22L is used as a mask layer for patterning the underlying metal. Indeed, a patterning layer 30 is subsequently applied to buffer layer 22L, where a standard lithography or nanoimprinting process (or any other suitable patterning process well-known in the art) is used to transfer the wire grid pattern into dielectric buffer 22L, creating dielectric wire regions 22W as shown in FIG. 5. A conventional etching process is then used to transfer the grid pattern of dielectric wire regions 22W into underlying metal layer 20L. The result of this etching step is shown in FIG. 6, where the duration of the etching process is controlled to retain a desired thickness t of dielectric wire regions 22W.

[0022] Once the combination of reflective metal 20 and dielectric buffer 22 have been patterned and etched as shown FIG. 6, a small-angle coating process is used to coat each initial wire structure with a layer of polarization-absorbing metal, followed by a layer of cladding dielectric. FIG. 7 illustrates a first coating process, using a source 80 to direct a suitable metal vapor toward the wire stubs comprising the dual layer reflective metal regions 20W and dielectric buffer regions 22W. The orientation of substrate 14 with respect to source 80 is controlled such that the metal vapor is directed at a relatively small angle ? (referred to at times as a glancing angle) with respect to the normal of the top surface of the wire stubs. As a result of this orientation, polarization absorbing metal coating regions 24C are formed on the top portions of buffer regions 22W. Since the incident angle ? is small, the wire stubs act as a shield and prevent the metal vapor from completely coating the structure. Preferably, a glancing angle no greater than about 10? is maintained in order for the wire stubs to provide the shielding capability.

[0023] One exemplary coating process may take the form of a sputter deposition process (using, for example, a magnetron sputtering process) to create a vapor flux for a coating process. Alternatively, a vacuum evaporation process may be used to perform the coating; other known deposition/coating processes known in the art may be used as well.

[0024] Once a satisfactory thickness of metal coating regions 24C is obtained, a second small-angle coating process commences, in this step directing a vapor of a suitable dielectric cladding material toward the formed structure. FIG. 8 illustrates this step in the process, where dielectric coating regions 26C are shown as deposited to coat the previously-formed metal coating regions 24C. Again, the use of the small angle of incidence a prevents the dielectric material from completely coating the individual wires. FIG. 9 illustrates the final structure of polarization absorbing wire grid polarizer 10 as formed by using the combination of etching and coating in accordance with the present disclosure.

[0025] Summarizing, a method is disclosed for fabricating a polarization absorption type of metal wire grid polarizer. The manufacturing method includes the formation of the metal absorption layer and dielectric cladding layer using a small-angle coating process such as a sputter deposition process or a vacuum evaporation coating process, where the orientation between the coating source and the substrate is controlled to provide the small incidence angle necessary for coating the wire stubs. The disclosed method avoids the process of etching a variety of alternating metal and dielectric films (thus reducing the production cost), as required in the prior art, while also improving the product yield.

[0026] While the disclosed fabrication method has been described and particularly shown with reference to exemplary embodiments and materials, it will be understood by those of ordinary skill in the art that various changes in detail, including material choices, coating processes, incidence angle, and the like, may be made without departing from the principles of the disclosed method. Indeed, the exemplary embodiments should be considered as illustrative only, and not for the purposes of limitation of the scope of claims as appended hereto.