LOW DIELECTRIC SEALING GLASS POWDER FOR MINIATURE RADIO-FREQUENCY GLASS INSULATOR

Abstract

A low dielectric sealing glass powder for a miniature radio-frequency glass insulator is made of the following raw materials expressed in molar percentages: SiO.sub.2: 70.5-74.0%, B.sub.2O.sub.3: 20.5-23.5%, Ga.sub.2O.sub.3: 0.5-2.0%, P.sub.2O.sub.5: 0.25-2.0%, Li.sub.2O: 0.4-6.0%, K.sub.2O: 0.1-1.5%, LaB.sub.6: 0.05-1.0%, and NaCl: 0.03-0.3%. The raw material components are simple, and the preparation method is easy to implement. The dielectric constant and dielectric loss of the prepared glass powder are low, and the melting and molding temperature is low, which are convenient for large-scale industrial production. The melting and molding temperature of the low dielectric sealing glass powder ranges from 1320 C. to 1360 C., and the obtained glass has a dielectric constant ranging from 3.8 to 4.1 and a dielectric loss ranging from 410.sup.4 to 1010.sup.4 at a frequency of 1 MHz, and a sealing temperature ranging from 900 C. to 950 C.

Claims

1. A low dielectric sealing glass powder for a miniature radio-frequency glass insulator, wherein the low dielectric sealing glass powder is made of raw materials expressed in molar percentages: SiO.sub.2: 70.5-74.0%, B.sub.2O.sub.3: 20.5-23.5%, Ga.sub.2O.sub.3: 0.5-2.0%, P.sub.2O.sub.5: 0.25-2.0%, Li.sub.2O: 0.4-6.0%, K.sub.2O: 0.1-1.5%, LaB.sub.6: 0.05-1.0%, and NaCl: 0.03-0.3%.

2. The low dielectric sealing glass powder for the miniature radio-frequency glass insulator according to claim 1, wherein the low dielectric sealing glass powder is made of raw materials expressed in molar percentages: SiO.sub.2: 71.5-73.0%, B.sub.2O.sub.3: 21.5-23%, Ga.sub.2O.sub.3: 0.8-1.5%, P.sub.2O.sub.5: 0.5-1.5%, Li.sub.2O: 0.8-5.5%, K.sub.2O: 0.3-1.2%, LaB.sub.6: 0.1-0.8%, and NaCl: 0.1-0.25%.

3. The low dielectric sealing glass powder for the miniature radio-frequency glass insulator according to claim 1, wherein the low dielectric sealing glass powder is made of raw materials expressed in molar percentages: SiO.sub.2: 71.5-72.5%, B.sub.2O.sub.3: 22-23%, Ga.sub.2O.sub.3: 1-1.2%, P.sub.2O.sub.5: 0.8-1.2%, Li.sub.2O: 1.5-2.5%, K.sub.2O: 0.5-1.0%, LaB.sub.6: 0.2-0.7%, and NaCl: 0.15-0.2%.

4. The low dielectric sealing glass powder for the miniature radio-frequency glass insulator according to claim 1, wherein a ratio of Li.sub.2O to K.sub.2O ranges from 1 to 6.

5. The low dielectric sealing glass powder for the miniature radio-frequency glass insulator according to any one of claims 1-4, wherein a ratio of Li.sub.2O to K.sub.2O ranges from 1 to 3.

6. The low dielectric sealing glass powder for the miniature radio-frequency glass insulator according to any one of claims 1-4, wherein a melting and molding temperature of the low dielectric sealing glass powder ranges from 1320 C. to 1360 C., and an obtained glass after melting has a dielectric constant ranging from 3.8 to 4.1 and a dielectric loss ranging from 410.sup.4 to 1010.sup.4 at a frequency of 1 MHz, and a sealing temperature ranging from 900 C. to 950 C.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0025] FIG. 1 shows a graph of dielectric constant of a glass powder sample versus tested frequency according to an embodiment of the present disclosure.

[0026] FIG. 2 shows a graph of dielectric loss of a glass powder sample versus tested frequency according to an embodiment of the present disclosure.

[0027] FIG. 3 shows a graph of high-temperature viscosity of a glass powder sample versus temperature according to an embodiment of the present disclosure.

[0028] FIG. 4 shows a sintering image of a glass powder sample according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

[0029] The present disclosure will be described in detail below in conjunction with specific examples, but the following examples are used to illustrate the present disclosure, and are not intended to limit the implementation scope of the present disclosure.

Embodiment

[0030] (1) Preparation of a mixture of raw materials: the above-mentioned raw materials were weighed by mass parts, and then were fully mixed in a mixer for 2 hours to prepare the mixture of raw materials.

[0031] (2) Melting: a crucible was installed in an electric furnace, the heating temperature was raised to a predetermined melting temperature of 1550 C. according to a step temperature program, add the mixture of raw materials was added to the crucible, and kept at 1550 C. for 180 minutes to obtain a clarified glass liquid.

[0032] (3) A small part of the molten glass liquid was poured into a copper plate mould for molding and then preparing samples for related performance tests. The rest glass liquid was drying after quenching in deionized cold water.

[0033] (4) The obtained dried glass was put into a ball mill, and then was milled for 12 hours, afterward was screened through a 300-mesh sieve, so as to obtain the low dielectric sealing glass powder for the miniature radio-frequency glass insulator of the present disclosure.

[0034] (5) The dielectric constant, dielectric loss, melting and molding temperature, and sealing temperature were characterized by a precision impedance analyzer, a glass high-temperature viscometer, and a sintering imager respectively. The sealing temperature is represented by a hemispherical temperature of the cylindrical glass powder sample in the sintering imager. A corner passivation temperature is the temperature when the corners of the cylindrical sample begin to show smooth arcs after being heated, and is the lower limit temperature used for sealing the glass powder. The hemispherical temperature is the temperature at which the height of the cylindrical glass sample decreases, the bottom of the cylindrical glass sample expands, and the sample gradually assumes a hemispherical shape and exists stably. And the hemispherical temperature is the upper limit temperature for sealing the glass powder.

TABLE-US-00001 TABLE 1 Embodi- Embodi- Embodi- Embodi- Embodi- Embodi- Corning Component ment 1 ment 2 ment 3 ment 4 ment 5 ment 6 7 series SiO.sub.2 71.0 71.5 72.0 72.0 73.0 73.5 74.7 B.sub.2O.sub.3 23.0 22.0 22.5 21.5 21.0 21.0 23.6 P.sub.2O.sub.5 1.0 1.0 1.0 1.0 1.5 1.5 Ga.sub.2O.sub.3 1.0 1.0 1.0 1.0 1.0 1.0 Li.sub.2O 2.0 2.5 2 1.5 1.5 1.05 1.03 K.sub.2O 1.0 0.5 0.8 1.0 1.0 1.0 0.67 LaB.sub.6 0.7 0.6 0.5 0.5 0.3 0.2 NaCl 0.15 0.15 0.2 0.2 0.25 0.25 Dielectric 3.85 3.89 3.92 3.94 3.98 4.05 4.1 Constant @1 MHz Dielectric Loss 6.5 6.0 5.5 6.5 7.0 7.5 6.5 10.sup.4@1 MHz Melting and 1334 1322 1338 1356 1335 1347 1385 Molding Temperature ( C.) Sealing 925 910 930 940 920 935 950 Temperature ( C.)