PROCESS FOR MANUFACTURING AN OPTICAL MICROELECTROMECHANICAL DEVICE HAVING A TILTABLE STRUCTURE WITH AN ANTIREFLECTIVE SURFACE

Abstract

A method for manufacturing an optical microelectromechanical device, includes forming, in a first wafer of semiconductor material having a first surface and a second surface, a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. The method continues with forming, in a second wafer, a chamber delimited by a bottom wall having a through opening, and bonding the second wafer to the first surface of the first wafer and bonding a third wafer to the second surface of the first wafer so that the chamber overlies the actuation structure, and the through opening is aligned to the suspended mirror structure, thus forming a device composite wafer. The device composite wafer is diced to form an optical microelectromechanical device.

Claims

1. A method for manufacturing an optical microelectromechanical device, comprising: forming, in a first wafer of semiconductor material having a first surface and a second surface, a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure; forming, in a second wafer, a chamber delimited by a bottom wall having a through opening; bonding the second wafer to the first surface of the first wafer and bonding a third wafer to the second surface of the first wafer so that the chamber overlies the actuation structure, and the through opening is aligned to the suspended mirror structure, thus forming a device composite wafer; and dicing the device composite wafer to form an optical microelectromechanical device.

2. The method according to claim 1, further comprising, prior to bonding the third wafer to the second surface of the first wafer, forming, on the third wafer, an inner antireflective surface facing the suspended mirror structure.

3. The method according to claim 1, wherein bonding the second wafer to the first surface of the first wafer is carried out prior to the bonding of the third wafer to the second surface of the first wafer.

4. The method according to claim 1, wherein forming the chamber comprises: in a work wafer having a first surface and a second surface, selectively removing portions of the work wafer starting from the first surface to form a first recess and a second recess, wherein the first recess is surrounded by the second recess and extends within the work wafer from the second recess; and thinning the work wafer from the second surface until reaching the first recess, to form the second wafer having the through opening and an outer surface opposite to the first surface.

5. The method according to claim 4, further comprising blackening the outer surface of the second wafer to cause the outer surface to be absorbent or diffusive with respect to light.

6. The method according to claim 5, wherein blackening comprises increasing roughness of the outer surface.

7. The method according to claim 5, wherein blackening comprises depositing absorbent with respect to light or dielectric layers onto the outer surface.

8. The method according to claim 4, wherein a bottom surface of the second recess of the second wafer and a side wall of the first recess of the second wafer form an angle comprised between 10 and 90.

9. The method according to claim 1, wherein the second wafer is made of semiconductor material.

10. The method according to claim 1, wherein forming the suspended mirror structure comprises selective chemical etching to release the suspended mirror structure, the selective chemical etching being carried out after bonding the second wafer to the first surface of the first wafer.

11. The method according to claim 1, wherein forming the suspended mirror structure comprises selective chemical etching to release the suspended mirror structure, the selective chemical etching being carried out prior to bonding the third wafer to the second surface of the first wafer.

12. The method according to claim 1, wherein the actuation structure is of a piezoelectric type.

13. A method for manufacturing an optical microelectromechanical device, including: forming a suspended mirror, fixed structure, elastic supports, and an actuation structure on a first wafer; creating a chamber with a through opening in a second wafer; and attaching the second wafer to the first wafer, and a third wafer to the opposite side, positioning the chamber over the actuation structure with the through opening aligned to the mirror to produce a composite wafer; wherein the creation of the chamber comprises: removing areas of a work wafer to produce first and second recesses, with the first recess enclosed by the second recess; and thinning the work wafer from its rear side until the first recess is exposed, shaping the second wafer with its opening.

14. The method of claim 13, further comprising, before attaching the third wafer to the first wafer, shaping an inner antireflective surface on the third wafer facing the mirror.

15. The method of claim 13, wherein the second wafer is attached to the first wafer before attaching the third wafer to the first wafer.

16. The method of claim 13, wherein a bottom of the second recess of the second wafer and a side of its first recess form an angle between 10 and 90.

17. The method of claim 13, further comprising blackening an outer surface of the second wafer to make it light-absorbent or diffusive.

18. An optical microelectromechanical device, comprising: a sensor body of semiconductor material having a first surface and a second surface and comprising a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure; a protective cap bonded to the first surface of the sensor body and comprising a chamber overlying the actuation structure, the chamber being delimited by a wall having a through opening and having an outer surface, the outer surface being absorbent or diffusive to light, and the through opening being aligned to the suspended mirror structure; and a supporting body bonded to the second surface of the sensor body.

19. The optical microelectromechanical device of claim 18, wherein the protective cap is comprised of semiconductor material or glass.

20. The optical microelectromechanical device according to claim 18, wherein the supporting body has an inner antireflective surface facing the suspended mirror structure.

21. A picoprojector apparatus for use in a portable electronic apparatus, comprising: a light source, configured to generate a light beam as a function of an image to be generated; an optical microelectromechanical device comprising: a sensor body of semiconductor material, having a first surface and a second surface and comprising a suspended mirror structure upon which the generated light beam impinges, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure; a protective cap bonded to the first surface of the sensor body and comprising a chamber overlying the actuation structure, the chamber being delimited by a wall having a through opening and having an outer surface, the outer surface being absorbent or diffusive to light, and the through opening being aligned to the suspended mirror structure; and a supporting body bonded to the second surface of the sensor body; and a driving circuit configured to supply electrical driving signals for rotating the suspended mirror structure.

22. The picoprojector apparatus according to claim 21, wherein the portable electronic apparatus is a viewer for augmented-reality or virtual-reality.

23. The picoprojector apparatus according to claim 21, wherein the protective cap is comprised of semiconductor material or glass.

24. The picoprojector apparatus according to claim 21, wherein the supporting body has an inner antireflective surface facing the suspended mirror structure.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0056] For better understanding, an embodiment is now described, purely by way of non-limiting example, with reference to the attached drawings, wherein:

[0057] FIG. 1 is a perspective schematic representation of a known picoprojector;

[0058] FIG. 2 is a top plan view of a microelectromechanical mirror device;

[0059] FIG. 3 is a cross-sectional view of the device of FIG. 2, taken along the line of section III-III;

[0060] FIGS. 4, 5A-5H, and 6-9 are cross-sectional views of wafers of semiconductor material in successive manufacturing steps of the microelectromechanical mirror device disclosed and described herein;

[0061] FIG. 10 is a perspective view of the microelectromechanical mirror device disclosed and described herein;

[0062] FIG. 11 is a block diagram of a picoprojector that uses the microelectromechanical mirror device disclosed and described herein;

[0063] FIG. 12 is a perspective view regarding a possibility of coupling between the picoprojector of FIG. 10 and a portable electronic apparatus; and

[0064] FIG. 13 is a perspective view regarding a possibility of coupling between the picoprojector of FIG. 10 and an augmented-reality viewing system.

DETAILED DESCRIPTION

[0065] Described hereinafter are steps for manufacturing a microelectromechanical device, in particular a mirror device obtained with MEMS technology, which can be used in picoprojectors and can be inserted in mobile apparatuses, in particular mobile phones and augmented-reality and virtual-reality viewers.

[0066] In particular, the manufacturing steps described below allow a microelectromechanical mirror device to be obtained having a general structure similar to the one illustrated in FIGS. 2 and 3 (but with substantial improvements made) and described briefly hereinafter. In particular, FIGS. 4, 5A-5H, and 6-9 refer to intermediate structures sectioned along lines of section corresponding to the line III-III of FIG. 2.

[0067] FIG. 4 shows a SOI wafer 90 having a first surface 100A and a second surface 100A, 100B and comprising a first structural layer 90A and a second structural layer 90B, which are, for example, made of silicon, and an intermediate insulating layer 90C, which is, for example, made of silicon oxide. The SOI wafer 90 has already been subjected to first manufacturing steps that lead to formation, within the first structural layer 90A, of actuation regions 83 (which comprise bottom-electrode regions, top-electrode regions, a passivation layer, contact openings, and metal routing regions, similar to the homologous structures of FIG. 3 and here not illustrated). Moreover, by chemical etching of the first structural layer 90A of the SOI wafer there have already been defined a tiltable structure 72; supporting elements 75A, 75B similar to the supporting elements 25A, 25B of FIG. 2, here visible only in part and delimited by a dashed line; elastic suspension elements similar to the elastic suspension elements 26A, 26B illustrated in FIG. 2 (here not illustrated); four driving arms (here just two driving arms 82A, 82C are visible); and four elastic decoupling elements, of which only two elastic decoupling elements 84A and 84C are visible. In addition, a reflective surface 72 has already been formed on top of the tiltable structure 72, forming a mirror structure 86.

[0068] Separately, a cap wafer 10, made of semiconductor material, for example silicon, comprising a work substrate 10 and an insulating layer 10, for example of silicon oxide is machined, as shown in FIG. 5A. The work substrate 10 has a first work surface 10A, set between the work substrate 10 and the insulating layer 10, and a second work surface 10B, opposite to the first work surface 10A.

[0069] In FIG. 5B, a first opening 11 is obtained in the insulating layer 10 via known lithographic steps and chemical-etching steps.

[0070] A masking region 12 is then formed on top of the first work surface 10A and on top of the insulating layer 10 of the cap wafer 10, via deposition and lithographic definition of a masking layer (for example, a resist layer); the masking region 12 forms an inner second opening 11, for example concentric to the first opening 11 (FIG. 5C).

[0071] Via a first chemical etching and using the masking region 12, part of the work substrate 10 is removed, for example for a depth of 50 m, in a region corresponding to the second opening 11, to create a first recess 13. The masking region 12 is then removed (FIG. 5D).

[0072] Using the remaining portions of the insulating layer 10 as a mask, a second chemical etching is carried out that further removes, for example for a depth of 100 part of the work substrate 10, making the first recess 13 deeper and creating a second recess 13, wider than the first recess 13. In practice, the first and second recesses 13, 13 are arranged underneath the first opening 11, illustrated in FIG. 5B. The remaining portions of the insulating layer 10 are then removed to obtain the intermediate structure of FIG. 5E. The remaining portions of the first surface 10A of the work substrate 10 (FIG. 5A) form a temporary-contact surface 14 of the work substrate 10, which has a smaller area than the first surface 10A and surrounds the second recess 13. The angle , defined between a bottom surface 13A of the second recess 13 and a side wall 13B of the first recess 13, which in FIG. 5E is 90, can have values comprised between 10 and 90 according to the specific chemical etching used and the desired profile of the opening for passage of the light beam (onto the reflective surface 72 illustrated in FIG. 4) in the final device, according to the application.

[0073] The work substrate 10 of FIG. 5E undergoes a thinning step, for example through a grinding process, as illustrated in FIG. 5F. To carry out this thinning process, the work substrate 10 is conveniently supported according to techniques known to the person skilled in the art, for example by temporary bonding between the work substrate 10, and a supporting wafer (here not illustrated), at the temporary-contact surface 14. In particular, the bonding process may envisage possible intermediate layers of material that facilitate the above process, in a way that is also known. In particular, the thinning process is carried out from the back, starting from the second work surface 10B of FIG. 5E and proceeds until the first recess 13 is reached, to obtain a thinned substrate 15, having an outer surface 15A. Following upon the thinning step, the second recess 13 forms a chamber 104 delimited underneath by a bottom wall 102, and the first recess 13 becomes a through recess and forms an opening 103 for the passage of light beams in the finished microelectromechanical device (FIG. 9).

[0074] Next, with reference to FIG. 5G, the outer surface 15A of the thinned substrate 15 undergoes a blackening process to make the outer surface 15A absorbant or diffusive in regard to light. For instance, the outer surface 15A may undergo an oxygen plasma etching (O.sub.2) or to laser etching, or some other work process such as to increase the roughness thereof, in a way known to the person skilled in the art. Alternatively, in a way equally known to the person skilled in the art, the outer surface 15A may be coated with thin layers of light absorbing materials or with dielectric multilayers designed for suppressing the reflected component of light.

[0075] The thinned substrate 15 is then temporarily bonded to a temporary supporting wafer 16 via a layer of adhesive material 17, with the layer of adhesive material 17 facing the outer surface 15A of the thinned substrate 15 and the opening 103 (FIG. 5H).

[0076] In FIG. 6, the thinned substrate 15 is turned over and bonded on the first surface 100A of the SOI wafer 90 of FIG. 4 in such a way that the chamber 104 surrounds and houses the actuation regions 83, and the opening 103 is aligned with, and faces, the mirror structure 86. A first composite wafer 109 is thus formed.

[0077] In FIG. 7, the first composite wafer 109 undergoes chemical etches, starting from the second surface 100B of the SOI wafer 90 (which now delimits the first composite wafer 109 and hence will also be referred to as bottom surface 100B of the first composite wafer 109). In particular, the second structural layer 90B of the SOI wafer 90 and the intermediate insulating layer 90C are selectively removed to create a cavity 73 that delimits underneath, and releases, the tiltable structure 72, the driving arms 82A, 82C (as well as the other two arms corresponding to the driving arms 32B, 32D of FIG. 2, here not visible), the elastic decoupling elements 84A and 84C, the supporting elements 75A, 75B (visible only in part and delimited by a dashed line in FIG. 7), and elastic suspension elements similar to the elastic suspension elements 26A, 26B illustrated in FIG. 2 and here visible. Each driving arm (here, 82A, 82C) forms, together with the respective actuation region 83, an actuation structure 80. In this step, reinforcement elements 91 are also formed, which extend from the tiltable structure 72 within the cavity 73. Finally, in this step, a fixed structure 74 is defined, which surrounds the cavity 73 and is delimited in FIG. 7 by a dashed line.

[0078] In FIG. 8, a supporting wafer 98 is bonded to the remaining portions of the bottom surface 100B of the first composite wafer 109 by a bonding layer 110 to form a second composite wafer 112. The supporting wafer 98 has been previously machined, in a way similar to what has been described with reference to FIG. 3, to form a rear recess 111 having a bottom surface 111 which is blackened. In particular, the supporting wafer 98 is bonded in such a way that the rear recess 111 is located at the cavity 73, facing and underneath the tiltable structure 72.

[0079] Finally, as shown in FIG. 9, the temporary supporting wafer 16 and the layer of adhesive material 17 are removed, and the second composite wafer 112 is diced to obtain a microelectromechanical mirror device 70. The microelectromechanical mirror device 70 thus comprises a sensor body 100, a protective cap 101, and a supporting body 99, obtained, respectively, from the SOI wafer 90, the cap wafer 10, and the supporting wafer 98. The resulting microelectromechanical mirror device 70 is illustrated also in FIG. 10.

[0080] In detail, FIG. 10 shows the protective cap 101 bonded to the sensor body 100, with the opening 103 aligned to the mirror structure 86 and to the bottom surface 111, which is blackened, of the supporting body 99. The protective cap 101 hence covers the actuation structures 80 (here not visible), leaving the control pads 88 free.

[0081] In this way, the sensor body 100, the protective cap 101, and the supporting body 99 may be obtained using the technologies and machines for semiconductor work, in one and the same factory.

[0082] Manufacturing the protective cap 101, now integrated in the process cycle as described above, moreover makes it possible to carry out the blackening of the outer surface 15A using efficient techniques, in particular in the case where the protective cap 101 is made of silicon. In this way, the outer surface 15A can absorb or diffuse the light beams 105 incident thereon, preventing undesired spurious reflections. In this way, the radiation reflected by the microelectromechanical device 70 is determined only by the light beams 105 reflected by the reflective surface 72.

[0083] Furthermore, the described manufacturing process allows for high freedom in the choice of the value of the angle ; in this way, it is possible to select in a controlled way the angle of incidence of the light beams 105 onto the tiltable structure 72, helping guarantee better control of operation of the microelectromechanical mirror device 70.

[0084] The techniques described herein also help guarantee a high versatility in manufacturing the protective cap 101, preventing problems of alignment of the opening 103 with the tiltable structure 72 during post-manufacture back-end bonding, and hence possible malfunctioning of the microelectromechanical mirror device 70 during operation.

[0085] The microelectromechanical device 70 can be used in a picoprojector 120 designed to be functionally coupled to portable electronic apparatuses, as illustrated schematically in FIGS. 11-13.

[0086] In detail, the picoprojector 120 of FIG. 11 comprises a light source 122, for example a laser light source, designed to generate a light beam 123; the microelectromechanical mirror device 70, designed to receive the light beam 123 and to direct it toward a screen or display surface 125 (external to and set at a distance from the picoprojector 120 itself); a first driving circuit 126, designed to supply appropriate control signals to the light source 122, for generation of the light beam 123 as a function of an image to be projected; a second driving circuit 128, designed to supply driving signals to the microelectronic device 70; and a communication interface 129, designed to receive, from an external control unit 130, for example included in the portable apparatus 121, information on the image to be generated, for example in the form of a pixel array. This information is sent at input for driving the light source 122.

[0087] The picoprojector 120 may be obtained as a separate and stand-alone accessory with respect to an associated portable apparatus or may be integrated therein.

[0088] Consider, for example, FIG. 12, where the picoprojector 120 is arranged within a casing 133 of a portable electronic apparatus 121. In this case, the portable electronic apparatus 121 has a respective portion 132 transparent to the light beam 123 coming from the microelectronic device 70. The picoprojector 120 is in this case for example coupled to a printed-circuit board present within the casing 133 of the portable electronic apparatus 121.

[0089] In another configuration, thanks to the excellent optical properties of the present microelectromechanical device 70, this can be integrated safely for the user also in a viewer 142 configured for being worn at a close distance from the eyes and for providing augmented-reality or virtual-reality images, as illustrated in FIG. 13. In detail, the viewer 142 comprises, for example, sensors 143, 144 for recording both the reality external to the user and movements of the user himself, such as movements of his hands or gaze. The information gathered by the sensors 143, 144 can be processed by a processing unit 145 and supplied to the control unit 130 for projecting images specific to the desired application by means of the picoprojector 120 on a lens 146 operating as screen.

[0090] Finally, it is clear that modifications and variations may be made to the microelectromechanical mirror device 70 and to the manufacturing process described and illustrated herein, without thereby departing from the scope of the present invention, as defined in the annexed claims.

[0091] For instance, the mirror structure, the elastic suspension elements and the actuation system may have different shapes. Moreover, the protective cap may be manufactured starting from different materials, for example glass, using different blackening processes and may have a different shape. In addition, the opening of the protective cap may be obtained using different processes either of a mechanical type or of a chemical type, for example via deep chemical etching.

[0092] The actuation system may be different, and may even not be a piezoelectric system.