CONNECTION CARRIER, OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING A CONNECTION CARRIER

Abstract

The invention relates to a connection carrier having at least one contact track which is connected in an electrically conductive manner to a contact surface for electrically contacting a semiconductor component, the contact track having a network structure in at least some locations. The invention further relates to a method for producing a connection carrier having contact tracks.

Claims

1. A connection carrier having at least one contact track which is connected in an electrically conductive manner to a contact surface for electrically contacting a semiconductor component, the contact track having a network structure with a plurality of network tracks in at least some locations, wherein the contact surface has a continuation which extends away from the contact surface.

2. The connection carrier as claimed in claim 1, wherein the network tracks have a width between 2 m and 20 m inclusive.

3. The connection carrier as claimed in claim 1, wherein the network tracks have a height between 1 m and 8 m inclusive.

4. The connection carrier as claimed in claim 1, wherein the network structure is formed at least in some locations by first network tracks running parallel to one another and second network tracks running parallel to one another, wherein the first network tracks and the second network tracks run obliquely or perpendicular to each other.

5. The connection carrier as claimed in claim 4, wherein a longitudinal extension axis of the contact track runs obliquely to the first network tracks and obliquely to the second network tracks, at least in some locations.

6. The connection carrier as claimed in claim 1, wherein in a peripheral region of the network structure and in the direction away from the center of the network structure, a center distance between adjacent first network tracks and/or between adjacent second network tracks is gradually increased and/or the width of the network tracks is gradually reduced.

7. The connection carrier as claimed in claim 1, wherein the contact surface is a flat electrically conductive region.

8. The connection carrier as claimed in claim 1, wherein the contact surface overlaps with at least two network tracks of the network structure.

9. The connection carrier as claimed in claim 1, wherein the contact surface has a continuation which extends away from the contact surface.

10. The connection carrier as claimed in claim 1, wherein the length of the continuation is at least as large as a distance between the first network tracks and/or a distance between the second network tracks.

11. The connection carrier as claimed in claim 1, wherein the network structure along the contact track forms at least two separate current paths within the contact track.

12. The connection carrier as claimed in claim 1, wherein the contact track at least in some locations has a reflection-reducing coating, which in particular contains palladium or molybdenum or copper nitride.

13. The connection carrier as claimed in claim 1, wherein at least one contact track provides an electrical contacting of the semiconductor component and/or wherein at least one contact track provides a capacitive tactile sensor function, wherein the at least one contact track providing the capacitive tactile sensor function is used for the control of the semiconductor component.

14. The connection carrier as claimed in claim 13, wherein at least one contact track is arranged on a first side and/or on a second side of the connection carrier facing away from the first side.

15. An optoelectronic device having a connection carrier as claimed in claim 1 and having an optoelectronic semiconductor component, wherein the optoelectronic semiconductor component is connected in an electrically conductive manner to at least two contact surfaces.

16. The optoelectronic device as claimed in claim 15, wherein electrical connections of the optoelectronic semiconductor component are arranged on a side facing the connection carrier.

17. The optoelectronic device as claimed in claim 15, wherein at least one electrical connection of the optoelectronic semiconductor component is arranged on a side facing away from the connection carrier and connected to the contact surfaces in an electrically conductive manner via a contact conductor.

18. A method for producing a connection carrier with contact tracks, having the steps: a) providing a substrate; and b) forming contact tracks, which have a network structure at least in some locations, on the substrate.

19. The method as claimed in claim 18, wherein before step b) a continuous network structure is arranged on the substrate and the network structure is structured into the contact tracks in step b).

20. The method as claimed in claim 18, wherein the network structure and the contact tracks are formed in a common method step.

21. The method as claimed in claim 18, wherein contact surfaces are formed, which are connected in an electrically conductive manner to a contact track in each case.

22. The method as claimed in claim 18, with which a connection carrier is produced, wherein the connection carrier includes at least one contact track which is connected in an electrically conductive manner to a contact surface for electrically contacting a semiconductor component, the contact track having a network structure with a plurality of network tracks in at least some locations, wherein the contact surface has a continuation which extends away from the contact surface.

23. The connection carrier as claimed in claim 1, wherein the contact track is subdivided into two subregions at a virtual intersection point with a further contact track, wherein the subregions are connected to each other via an electrically conductive bridge, which is electrically insulated from the further contact track

Description

[0054] Further advantages and advantageous features of the invention can be found in the following description of the exemplary embodiments in conjunction connection with the drawings.

[0055] In the drawings:

[0056] FIG. 1A shows an exemplary embodiment of a connection carrier in a schematic plan view;

[0057] FIG. 1B shows an enlarged drawing of a detail of FIG. 1A;

[0058] FIG. 1C shows an enlarged drawing of a detail of the connection carrier of figure LA in a schematic sectional view;

[0059] FIGS. 2, 3 and 4 each show an exemplary embodiment of a connection carrier in a schematic plan view;

[0060] FIGS. 5A and 5B each show an exemplary embodiment of a connection carrier in a schematic plan view;

[0061] FIGS. 6 and 7 each show an exemplary embodiment of an optoelectronic device in plan view;

[0062] FIGS. 8A, 8B, 8C and 8D each show an exemplary embodiment of a method for producing a connection carrier using intermediate steps shown schematically in plan view;

[0063] FIG. 9A shows an exemplary embodiment of a connection carrier in a schematic plan view;

[0064] FIG. 9B shows an exemplary embodiment of a connection carrier in a schematic plan view;

[0065] FIGS. 10A and 10B each show an exemplary embodiment of a connection carrier in a schematic plan view; and

[0066] FIGS. 11A to 11C each show an exemplary embodiment of a connection carrier in a schematic sectional view.

[0067] Identical, similar or equivalently functioning elements are labeled with the same reference signs in the figures.

[0068] The figures are all schematic representations and therefore not necessarily true to scale. Instead, individual elements and in particular layer thicknesses can be shown exaggerated in size for better visualization and/or improved understanding.

[0069] The exemplary embodiment shown in FIG. 1A has a connection carrier 1 with contact tracks 2, wherein the contact tracks 2 are each connected in an electrically conductive manner to a contact surface 4 for electrically contacting a semiconductor component. The contact tracks 2 each have a network structure 3 in some locations. The contact tracks 2 are arranged on a substrate 10 of the connection carrier 1.

[0070] For example, the contact tracks 2 each connect at least one contact surface 4 to a connection surface 81 of a connection region 8 of the connection carrier 1.

[0071] The connection region 8 is located, for example, on an edge region of the connection carrier 1 and is used for the external electrical contacting of the connection carrier. The network structure 3 in the illustrated exemplary embodiment is formed by first network tracks 31 and second network tracks 32, wherein the first network tracks 31 each run parallel to each other and the second network tracks 32 each run parallel to each other. The first network tracks 31 and the second network tracks 32 run obliquely or perpendicular to each other, in the illustrated exemplary embodiment perpendicular.

[0072] However, a different angle may also be applied. Between the network tracks 31, 32, openings 30 are formed in which the substrate 10 is free of material for the contact track.

[0073] Purely for simplicity of illustration the connection carrier 1 has only two contact tracks 2, each having one contact surface 4, wherein the contact surfaces 4 are designed for electrically contacting a semiconductor component, for example an optoelectronic semiconductor component. Typically, the connection carrier 1 has a plurality of such contact tracks 2, wherein the contact tracks 2 are designed, for example, for electrically contacting 100 or more semiconductor components.

[0074] The contact tracks 2 are electrically insulated from each other by an intervening gap 5. In comparison to a conventionally produced contact track in the form of a continuous solid conductor track, the contact tracks 2 can have a comparatively large transverse extent perpendicular to their longitudinal extension axis 20 in plan view of the connection carrier 1, without the contact tracks 2 being visible to the human eye. The electrical contacting via the contact tracks 2 can therefore be distributed over a comparatively large area, resulting in a homogeneous overall impression to the human eye.

[0075] In particular, the gaps 5 can also be formed sufficiently narrow that they are not perceptible.

[0076] The longitudinal extension axis 20 of the contact track 2 runs, at least in some locations, obliquely to the first network tracks 31 and obliquely to the second network tracks 32, for example at an angle of 45 to each of these network tracks 31, 32. For example, the network tracks 31, 32 have a width w1 between 2 m and 20 m inclusive, for example between 5 m and 15 m inclusive.

[0077] For example, perpendicular to a main extension plane of the connection carrier 1, the network tracks have a height h1 between 1 m and 8 m inclusive, for example between 2 m and 4 m inclusive. An aspect ratio of the network tracks is between 0.2 and 1.5 inclusive, for example.

[0078] For example, a center distance d1 between adjacent first network tracks 31 and/or between adjacent second network tracks 32 is between 50 m and 800 m inclusive.

[0079] The contact surfaces 4 are in each case flat electrically conductive regions with a maximum extent along two mutually perpendicular directions, each of which is larger than the width w1 of a single network track.

[0080] Furthermore, the connection surfaces 81 in the connection region 8 can also be formed by flat electrically conductive regions. This can facilitate the external electrical contactability of the connection carrier 1.

[0081] A suitable option for the substrate 10, for example, is a mechanically rigid substrate, e.g. in the form of a disk or plate, or a mechanically flexible substrate, e.g. in the form of a film. The substrate 10 is electrically insulating. For example, the substrate 10 is transparent in the visible spectral range. For example, the substrate 10 contains a glass or a plastic such as polyethylene, polyimide, polyethylene terephthalate, polyethylene naphthalate or polyacrylic.

[0082] The contact tracks 2 are metallic, for example. For example, the contact tracks 2 contain copper or another metal with high electrical conductivity. To avoid or at least reduce specular reflection, the contact track 2 may have a reflection-reducing coating 25. This is shown schematically in the sectional view of FIG. 1C. For example, copper-based contact tracks can be blackened by means of molybdenum or palladium or copper nitride, in particular in the region of the network structure 3 with the network tracks 31, 32.

[0083] The exemplary embodiments shown in FIGS. 2 and 3 correspond essentially to the exemplary embodiment described in connection with FIGS. 1A to 1C. In contrast to the latter, the contact surface 4 has a continuation 41. Along one direction, a maximum extent of the continuation 41 is greater than the center distance d1 between the network tracks 31, 32. With such a continuation 41, the reliability of the electrical contacting of the contact surface 4 to the network structure 3 of the contact track 2 can be increased, since an electrically conductive contact exists between the contact surface 4 and the network structure 3 at multiple locations.

[0084] In the exemplary embodiment shown in FIG. 2, the continuation 41 extends away from the contact surface 4 on a lateral surface of the contact surface 4. The continuation 41 is formed on a lateral surface of the contact surface 4, which faces away from the nearest contact surface 4 of another contact track 2.

[0085] In the exemplary embodiment shown in FIG. 3, the continuation 41 extends beyond the contact surface 4 on two opposite lateral surfaces of the contact surface 4.

[0086] Of course, the shape or the number of continuations 41 can be varied within wide limits. Such a continuation is particularly expedient if the size of the contact surface 4 is less than or equal to the center distance d1 between the network tracks 31, 32 at least along one direction.

[0087] The exemplary embodiment shown in FIG. 4 corresponds essentially to the exemplary embodiment shown in connection with the FIGS. 1A to 1C. In contrast to this, a contact track 2 is subdivided into two sub-regions 21 at a virtual intersection point 29 with a further contact track 2. The subregions 21 are connected to each other by means of an electrically conductive bridge 6. In plan view of the connection carrier 1, the bridge 6 overlaps with the further contact track 2 but is electrically insulated from the latter by means of an insulator 65. By means of such bridges applied by additive manufacturing, intersecting contact tracks 2 with a network structure 3 can be realized in only one layer.

[0088] FIGS. 5A and 5B illustrate the current flow within the contact tracks 2.

[0089] FIG. 5A shows the extreme case that the contact tracks 2 are so narrow that along the longitudinal extension axis 20 of the contact tracks 2 only one continuous current path 27 results in each case, which is illustrated by the zigzag curve shown. Although this is possible in principle, there is a risk of failure if the grid structure 3 has a defect along this current path 27. Preferably, the contact tracks 2, as shown in FIG. 5B, are each designed in such a way that at least two separate current paths 27 are formed along the contact tracks 2 by means of the network structure 3 within the respective contact track 2. If one of the current paths 27 is interrupted, an electrically conductive connection still exists via the other current path 27. Preferably, such redundancy exists at any point along the longitudinal extension axis 20 of the contact track 2 from the contact surface 4 to the associated connection surface 81.

[0090] FIG. 6 shows an exemplary embodiment of an optoelectronic device 100, wherein the connection carrier 1 is formed as described in connection with FIGS. 1A to 1C.

[0091] The optoelectronic device 100 comprises an optoelectronic semiconductor component 9, wherein the optoelectronic semiconductor component 9 is connected in an electrically conductive manner to at least two contact surfaces 4. In the illustrated exemplary embodiment, the optoelectronic semiconductor component 9 has electrical connections 91 on a side facing the connection carrier 1. For example, the optoelectronic semiconductor component 9 is a light-emitting diode in flip-chip geometry. In plan view of the optoelectronic device 100, the optoelectronic semiconductor component 9 overlaps with the associated contact surfaces 4 of the connection carrier 1. The optoelectronic device 100 can comprise a plurality of optoelectronic semiconductor components, for example light-emitting diodes or detectors and optionally further electronic components, which are connected in an electrically conductive manner to associated contact surfaces 4 of the connection carrier 1.

[0092] Such an optoelectronic device 100 can be applied, for example, on a glass plate or embedded between two glass plates. The glass plate can be used, for example, for a building or a motor vehicle. Placement behind a transparent or semi-transparent plastic carrier is also conceivable in order to illuminate the carrier.

[0093] The exemplary embodiment of an optoelectronic device shown in FIG. 7 corresponds essentially to the optoelectronic device 100 described in connection with FIG. 6. In contrast to this, the optoelectronic semiconductor component 9 has electrical connections 91 on a side facing away from the connection carrier 1. The electrical connections 91 are connected in an electrically conductive manner to the contact surfaces 4 via a contact conductor 7. In this case, the contact surface 4 can also be formed by the network structure 3 of the contact track 2. In the production of the optoelectronic device 100, the contact conductors 7 can be applied by an additive method after the optoelectronic semiconductor components 9 are attached to the connection carrier 1.

[0094] Of course, semiconductor components in the geometries described in connection with FIGS. 6 and 7 and the associated type of electrical contacting can also be combined with each other within one optoelectronic device 100.

[0095] An exemplary embodiment of a method for producing a connection carrier is schematically illustrated in FIGS. 8A to 8D. As shown in FIG. 8A, a substrate 10 is provided. A network structure 3 is formed on the substrate 10 (FIG. 8B). The network structure 3 can extend uniformly over a majority of the substrate 10 or also over the entire substrate 10. The material for the network structure 3 can be applied to the substrate 10 by sputtering or evaporation, for example, and if necessary, additionally by galvanic reinforcement.

[0096] Subsequently, contact tracks 2 are formed, which have the network structure 3 at least in some locations. For this purpose, the network structure 3 can be removed in places so that there are gaps 5 between the contact tracks 2. This can be carried out, for example, by laser ablation or by chemical material removal.

[0097] As shown in FIG. 8D, contact surfaces 4 are formed on the substrate 10. The contact surfaces 4 each overlap with the network structure of the associated contact track 2. Of course, the contact surfaces 4 can also be formed before the structuring into contact tracks 2 is carried out. In this exemplary embodiment, the network structure 3 is initially formed largely independently of the shape of the contact tracks 2 to be produced, before a structuring into contact tracks 2 is carried out. Deviating from this, the network structure 3 can already be designed in a structured form for the contact tracks 2. In this case, the network structure can also be specifically matched to the shape of the contact tracks to be produced.

[0098] The exemplary embodiment shown in FIG. 9A shows a connection carrier 1 having a network structure 3. The connection carrier 1 comprises semiconductor devices 9 on the network structure 3 (not shown in FIG. 9A). The network structure 3 has a peripheral region 33. In the peripheral region 33 of the network structure 3 and in the direction away from the center of the network structure 3, the center distance (d1) between adjacent first network tracks 31 and the center distance (d1) between adjacent second network tracks 32 is constant, wherein the width (w1) of the network tracks 31 and 32 is gradually reduced. The peripheral region 33 shows progressively thinner network tracks 31 and 32 in the direction away from the center of the network structure 3.

[0099] The exemplary embodiment shown in FIG. 9B corresponds essentially to the exemplary embodiment shown in FIG. 9A. In contrast, in the peripheral region 33 and in the direction away from the center of the network structure 3, the center distance (d1) between adjacent first network tracks 31 and the center distance (d1) between adjacent second network tracks 32 is gradually increased. The peripheral region 33 of the network structure 3 shows a progressively lower density of the network tracks 31 and 32 and progressively thinner network tracks 31 and 32 in the direction away from the center of the network structure 3. The connection carrier 1 in FIG. 9B has semiconductor components 9 on the network structure 3 (not shown in FIG. 9B).

[0100] Alternatively, the width (w1) of the network tracks 31 and 32 can be constant, wherein in the peripheral region 33 and in the direction away from the center of the network structure 3, the center distance (d1) between adjacent first network tracks 31 and the center distance (d1) between adjacent second network tracks 32 is gradually increased.

[0101] As shown in both FIGS. 9A and 9B, the region with the network structure 3 advantageously passes continuously via the peripheral region 33 into the region without a network structure. As a result, no stark contrast is noticeable to the human eye and the network structure appears more transparent and less like a foreign object on the connection carrier 1.

[0102] The exemplary embodiment shown in FIG. 10A has a connection carrier 1 having a network structure 3. The network structure 3 is structured by means of intervening gaps 5 into multiple contact tracks 2. The semiconductor components 9 are electrically contacted by means of two contact tracks 2. In addition, three contact surfaces 2 each form a first 22, a second 23 and a third 24 electrode, which can be used for a capacitive tactile sensor function. The connection carrier 1 has connection surfaces 81 for the respective contact surfaces 2 (not shown in FIG. 10A).

[0103] The contact tracks 2, which provide the electrical contacting of the semiconductor components 9, and the first 22, second 23 and third 24 electrode are arranged on the same surface of the connection carrier 1 and the substrate 10 respectively. The first electrode 22 is formed by a circular surface. The two contact surfaces 2, which provide the electrical contacting of the semiconductor devices 9, are also arranged around the first electrode 22. In this case, the first electrode 22 and the two contact surfaces 2, which provide the electrical contacting of the semiconductor component 9, are electrically insulated from each other by intervening gaps 5. The contact surfaces 2, which provide the electrical contacting of the semiconductor components 9, are each formed by an annular surface and two incoming conductive surfaces of the network structure 3. A continuous contact surface 2 is thus formed. The two incoming conducting surfaces extend in a straight line and parallel to each other onto the annular surface.

[0104] Around the first electrode 22 and the two contact surfaces 2, which provide the electrical contacting of the semiconductor components 9, two further contact surfaces 2 are arranged, with one contact surface 2 forming a second electrode 23 and one contact surface 2 forming a third electrode 24. At the same time, the second electrode 23 and the third electrode 24 together form a rectangle around the first electrode 22 and the two contact surfaces 2 which provide the electrical contacting of the semiconductor components 9. The second 23 and third electrode 24 are electrically insulated from each other by a gap 5 on the side opposite the incoming surfaces of the two contact surfaces 2, which provide the electrical contacting of the semiconductor component.

[0105] The gap 5 which separates the second electrode 23 from the third electrode 24 runs vertically in a straight line on the two annular surfaces of the contact surfaces 2 that provide the electrical contacting of the semiconductor components 9. The laterally adjacent first electrode 22, the second electrode 23 and the third electrode 24 can be advantageously used for a capacitive tactile sensor function. For example, the exemplary embodiment shown in FIG. 10A could be formed as a button or a sensor surface.

[0106] The exemplary embodiment shown in FIG. 10B corresponds essentially to the exemplary embodiment described in connection with FIG. 10A. In contrast to this, the connection carrier 1 has two contact surfaces 2, which form a first electrode 22 and a second electrode 23. In this case, the first electrode 22 has a circular shape. Furthermore, the second electrode 23 is arranged around the first electrode 22 and the two contact surfaces 2 which provide the electrical contacting of the semiconductor components 9. The second electrode 23 thus forms a rectangular surface, which is interrupted by the first electrode 22 and the two contact surfaces 2, which provide the electrical contacting of the semiconductor components 9.

[0107] To simplify the illustration, the contact surfaces 2 of the connection carrier 1 in FIG. 10B do not show any connection surfaces 81, continuations 41 or contact surfaces 4.

[0108] The first electrode 22 and the laterally adjacent second electrode 23 can be advantageously used for a capacitive tactile sensor function. For example, the exemplary embodiment shown in FIG. 10B could be formed as a button or a sensor surface.

[0109] The exemplary embodiment shown in FIG. 11A has a connection carrier 1 having a network structure 3. The network structure 3 is structured into multiple contact tracks 2 arranged in parallel. Between each adjacent contact track 2 an intervening gap 5 is arranged, which electrically insulates the neighboring contact tracks 2 from each other.

[0110] In particular, two contact tracks 2 provide electrical contacting of the semiconductor component 9. The semiconductor component 9 is arranged on the two contact tracks 2 which provide the electrical contacting. To simplify the illustration, the two contact tracks 2 in FIG. 11A providing the electrical contacting of the semiconductor component 9 have no contact surfaces 4.

[0111] In addition to the two contact tracks 2 providing the electrical contacting of the semiconductor component 9, further contact tracks 2 are arranged on the connection carrier 1. In this case, at least one further contact track 2 forms an electrical conductor on the connection carrier 1. The exemplary embodiment shown in FIG. 11A further comprises, in addition to the two contact tracks 2 providing the electrical contacting of the semiconductor component 9, a plurality of parallel contact tracks 2, which in combination form a first electrode 22 and a second electrode 23. The two contact tracks 2 providing the electrical contacting of the semiconductor component 9 are in this case arranged between the first electrode and second electrode 23. The first electrode 22 and the second electrode 23 can be advantageously used for a capacitive tactile sensor function.

[0112] To simplify the illustration, FIG. 11A shows the contact tracks 2 without connection surfaces 81. In this case, the contact track 2 providing the electrical contacting of the semiconductor component 9 has exactly one connection surface 81, as shown in FIG. 1A.

[0113] The contact tracks 2, which provide a capacitive tactile sensor function, can have at least two connection surfaces 81. In particular, each contact track 2 providing a capacitive tactile sensor function has exactly two connection surfaces 81. In this case, a first connection surface 81 of the contact track 2 contacts a first connection 91 and a second connection surface 81 of the contact track 2 contacts a second connection 91, wherein the first and second connection 91 are arranged as far apart from each other as possible on a longitudinal extension axis 20 of the contact track 2.

[0114] Alternatively, or in addition thereto, the contact track 2 providing a capacitive tactile sensor function can be electrically contacted at four connections 91 of four connection surfaces 81. For example, the four connection surfaces 81 can connect one contact track 2 at four corners or on four sides.

[0115] The exemplary embodiment shown in FIG. 11B corresponds essentially to the exemplary embodiment described in connection with FIG. 11A. In contrast, the connection carrier 1 has a first network structure 3 on a first side and a second network structure 3 on a second side of the connection carrier 1. The first and second network structure 3 are structured into multiple contact tracks 2 oriented in parallel. The contact tracks 2 on the first side are aligned perpendicular to the contact tracks 2 on the second side of the connection carrier 1. The first side of the connection carrier 1 is located opposite the second side of the connection carrier 1. In particular, a plurality of parallel contact tracks 2 thus form a first electrode 22 and a further first electrode 22 on the first side. The first electrode 22 and the further first electrode 22 are arranged on the same side and in the same plane on the connection carrier 1. Further, the contact tracks 2, which provide the electrical contacting of the semiconductor component 9, are arranged between the first electrode 22 and the further first electrode 22 on the connection carrier 1. The contact tracks 2 on the second side of the connection carrier 1 in combination thus form a second electrode 23. The contact tracks 2 of the second electrode 23 are aligned perpendicular to the contact tracks 2 to the two first electrodes 22. The exemplary embodiment shown in FIG. 11B, as in FIG. 11A, shows only semiconductor components 9 on a first side of the connection carrier 1. Alternatively, the second side may also have semiconductor components 9.

[0116] The exemplary embodiment shown in FIG. 11C corresponds essentially to the exemplary embodiment described in connection with FIG. 11B. In contrast, the connection carrier 1 has two contact tracks 2 on its second side, which electrically contact a further semiconductor component 9. In particular, the connection carrier 1 or the substrate 10 then comprises semiconductor components 9 on the two opposite sides of the connection carrier 1.

[0117] The contact tracks 2 on the first side of the connection carrier 1, which provide a capacitive tactile sensor function, are aligned perpendicular to the contact tracks 2 on the second side of the connection carrier 1. In particular, a plurality of parallel contact tracks 2 thus form a first electrode 22 and a further first electrode 22 on the first side. A plurality of parallel contact tracks 2 thus form a second electrode 23 and a further second electrode 23 on the second side. The first electrode 22 and the further first electrode 22 are arranged on the connection carrier 1 on the same side and in the same plane. The second electrode 23 and the further second electrode 23 are arranged on the connection carrier 1 on a second side in the same plane. In this case, the contact tracks 2 providing an electrical contacting of the semiconductor component 9 on the first side are arranged between the first electrode 22 and the further first electrode 22. Likewise, the contact tracks 2 providing electrical contacting of the semiconductor component 9 on the second side are arranged between the second electrode 23 and the further second electrode 23. The contact tracks 2 of the two first electrodes 22 are arranged perpendicular to and directly above the contact tracks 2 of the two second electrodes 23.

[0118] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention comprises each new feature as well as any combination of features, which includes in particular every combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or the exemplary embodiments.

LIST OF REFERENCE SIGNS

[0119] 1 connection carrier [0120] 10 substrate [0121] 100 optoelectronic device [0122] 2 contact track [0123] longitudinal extension axis [0124] 21 subregion [0125] 22 first electrode [0126] 23 second electrode [0127] 24 third electrode [0128] 25 reflection-reducing coating [0129] 27 current path [0130] 29 virtual intersection point [0131] 3 network structure [0132] 30 opening [0133] 31 first network tracks [0134] 32 second network tracks [0135] 33 peripheral region [0136] 4 contact surface [0137] 41 continuation [0138] 5 intervening gap [0139] 6 bridge [0140] 65 insulator [0141] 7 contact conductor [0142] 8 connection region [0143] 81 connection surface [0144] 9 semiconductor component [0145] 91 connection [0146] d1 center distance [0147] w1 width [0148] h1 height