DEVICE FOR GENERATING WIDE CAPTURE RANGE FREQUENCY TUNABLE OPTICAL MILLIMETER-WAVE SIGNAL
20240048244 ยท 2024-02-08
Inventors
- Xiaofeng Jin (Hangzhou, CN)
- Ling Yang (Hangzhou, CN)
- Ping WANG (Hangzhou, CN)
- Jie Li (Hangzhou, CN)
- Yafeng Zhu (Hangzhou, CN)
- Xiangdong Jin (Hangzhou, CN)
- Yinfang Xie (Hangzhou, CN)
Cpc classification
H04B10/5051
ELECTRICITY
H04B10/63
ELECTRICITY
H04B2210/006
ELECTRICITY
H04B10/90
ELECTRICITY
International classification
H04B10/63
ELECTRICITY
Abstract
A device for generating wide capture range frequency tunable optical millimeter-wave signal includes a millimeter-wave signal generating structure, a millimeter-wave signal modulation structure, an optical delay phase detection structure and a feedback control loop. The millimeter-wave signal generating structure obtains millimeter-wave signal by beat frequency of the optical signal generated by a master laser and a slave laser, the millimeter-wave signal is modulated onto an optical carrier of the master laser by the electro-optical modulation structure, and then passes through the optical delay phase detection structure to generate an error signal associated with a frequency of the millimeter-wave signal. The error signal is controlled by the feedback control loop to change temperature and driving current of the slave laser, and adjust a difference between output wavelengths of the master laser and the slave laser, and at last maintain the frequency and phase of the millimeter-wave be stable.
Claims
1. A device for generating wide capture range frequency tunable optical millimeter-wave signal, comprising a millimeter-wave signal generating structure, a millimeter-wave signal modulation structure, an optical delay phase detection structure and a feedback control loop; wherein the millimeter-wave signal generating structure obtains the millimeter-wave signal by a beat frequency of the optical signal generated by a master laser and a slave laser, the millimeter-wave signal is modulated onto an optical carrier of the master laser by the electro-optical modulation structure, and then passes through the optical delay phase detection structure to generate an error signal associated with a frequency of the millimeter-wave signal; the error signal is controlled by the feedback control loop to adaptively change temperature and driving current of the slave laser, and coordinately adjust a difference between output wavelengths of the master laser and the slave laser, and at last maintain the frequency and phase of the millimeter-wave be stable; and by changing the length of the tunable optical fiber delay line in the optical delay phase detection structure, frequency tunability of wide capture range of the frequency of the millimeter-wave signal is realized.
2. The device according to claim 1, wherein the millimeter-wave signal generating structure comprises: the master laser, the slave laser, a first 12 optical coupler, and a 22 optical coupler, and a millimeter-wave signal generation structure high-speed photodetector; the master laser and the slave laser each generates two optical signals L1 and L2 with specific wavelengths; the main laser is a narrow linewidth laser; the optical signal L1 is input to the first 12 optical coupler, and the optical signal L2 is input to the 22 optical coupler; the first 12 optical coupler is configured to divide the optical signal L1 output by the master laser into two optical signals L11 and L12; wherein, the optical signal L11 enters the 22 optical coupler, and the optical signal L12 is input to the millimeter-wave signal modulation structure; the 22 optical coupler is configured to couple the optical signal L11 and the optical signal L2 into the millimeter-wave signal generating structure high-speed photodetector; the millimeter-wave signal generating structure high-speed photodetector is configured to perform beat frequency on the coupled optical signal, generate a millimeter-wave signal with a frequency f.sub.RF, and the millimeter-wave signal is input to the millimeter-wave signal modulation structure.
3. The device according to claim 2, wherein the millimeter-wave signal modulation structure comprises a Mach Zehnder electro-optical modulator (MZM) and an electrical power divider; the electrical power divider divides the millimeter-wave signal into two paths: a radio frequency signal E1 and a radio frequency signal E2; the radio frequency signal E1 is configured for signal output, and the radio frequency signal E2 is input to a radio frequency input end of the MZM for adjusting a DC bias voltage of the MZM and make the DC bias voltage work at a quadrature point, so that the optical signal is modulated to the radio frequency signal E2, and optical signal L3 is output to the optical delay phase detection structure.
4. The device according to claim 3, wherein the optical delay phase detection structure comprises a second 12 optical coupler, an adjustable optical fiber delay line, and a first optical delay phase detection structure high-speed photodetector, a second optical delay phase detection structure high-speed photodetector, a mixer, and a low-pass filter; the second 12 optical coupler is configured to divide the optical signal L3 into an optical signal L31 and an optical signal L32; the adjustable optical fiber delay line is configured to equalize the delays of the optical signal L31 and an optical signal L32 and generate a delay , so that the optical signal L31 and an optical signal L32 generate a corresponding phase difference 2f.sub.RF, and output an optical signal L31; the first optical delay phase detection structure high-speed photodetector is configured to convert the optical signal L31 into a radio frequency signal E3; the second optical delay phase detection structure high-speed photodetector is configured to convert the optical signal L32 into the radio frequency signal E4; the mixer is configured to mix the radio frequency signal E3 and the radio frequency signal E4 to obtain a phase difference signal; the low-pass filter is configured to perform low-pass filtering on the phase difference signal, filter out high-frequency components, and obtain a DC error signal and input the DC error signal into the feedback control loop; for the phase detector structure composed of a mixer and a low-pass filter, only when the input signals are of the same frequency and quadrature, the output error signal is 0, that is, the locking point; ideally, there can be infinitely many locking points, however, due to the limitation of the actual device bandwidth, the phase is locked at
5. The device according to claim 4, wherein the feedback control loop comprises a controllable current source and a single-chip microcomputer control circuit; the controllable current source is capable of, according to the input error signal, adaptively changing the size of the driving current input to the slave laser, and then changing the output wavelength of the slave laser with high precision in a narrow range, keeping the frequency of the millimeter-wave signal locked; the single-chip microcomputer control circuit the output error signal is sampled and processed by the single-chip microcomputer, and the operating temperature of the slave laser is adjusted accordingly according to the error voltage, so as to change the output wavelength of the slave laser in a wide range and with low precision, and realize the wide-range tuning of the milliner-wave signal.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0016]
[0017] In the drawings: 1-Master laser, 2-Slave laser, 3-First 12 optical coupler, 4-22 optical coupler, 5-Millimeter-wave signal generation structure high-speed photodetector, 6-Electrical power divider, 7-electro-optic modulator, 8-second 12 optical coupler, 9-adjustable fiber delay line, 10-first optical path delay phase detection structure high-speed photodetector, 11-second optical path delay phase detection structure high-speed photodetector, 12-mixer, 13-low-pass filter, 14-controllable current source, 15-single-chip microcomputer control circuit.
[0018]
DETAILED DESCRIPTION OF THE DISCLOSURE
[0019] In order to describe the present disclosure more specifically, the technical solutions of the present disclosure will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0020] The present disclosure is based on a device for generating wide capture range tunable optical millimeter-wave signal based on an optical phase-locked loop. The entire system includes a millimeter-wave signal generating structure, a millimeter-wave signal modulation structure, an optical path delay phase detection structure and a feedback control loop. As shown in
[0021] The light L1 that the main laser 1 outputs is coupled into the first 12 optical coupler 3 through a polarization-maintaining fiber, and is branched into L11 and L12 through the first 12 optical coupler 3. The L11 and the polarization-maintaining fiber carrying light L2 output by the slave laser are coupled into the 22 optical coupler 4. The output light of the 22 optical coupler 4 is connected to and beat by the millimeter-wave signal generating structure high-speed photodetector 5 through the optical fiber to obtain a millimeter-wave signal. After divided by the electrical power divider 6, E1 is being the signal output end, which can be connected to the spectrum analyzer for observation, or can be connected to the millimeter-wave input port of other specific systems; E2 is coupled to the RF input port of the electro-optic modulator 7 through a radio frequency line. The other optical path L12 output by the first 12 optical coupler 2 is coupled into the optical input port of the electro-optical modulator 7 to form a millimeter-wave signal modulation structure. The millimeter-wave signal is modulated to the optical carrier and connected to the second 12 optical coupler 8 through the optical fiber L3 via the output port of the electro-optic modulator 7. The output of the 12 optical coupler 8 is connected to the adjustable optical fiber delay line 9 and the first optical path delay phase detection structure high-speed photodetector 10, respectively, through the optical fibers L31, L32. The adjustable optical fiber delay line 9 outputs the optical signal after delay time , and is connected to the second optical path delay phase detection structure high-speed photodetector 11 through the optical fiber L31. The optical signals on the optical paths L31 and L32 respectively beat by the first optical delay phase detection structure high-speed photodetector 10 and the second optical delay phase detection structure high-speed photodetector 11 the output RF signals are connected to the two RF input ports of the mixer 12 through the RF lines E3 and E4. The output of the mixer 12 is connected to the low-pass filter 13. This forms the optical path delay phase detection structure. The low-pass filter 13 outputs an error signal, and inputs the error signal to the controllable current source 14 to control the drive current of the slave laser 2. At the same time, the single-chip microcomputer also samples the output error signal, and feedback to control the temperature of the lasers. These two together complete the tuning of the wavelength of the slave laser 2, forming the feedback control loop.
[0022] In the present embodiment, the master laser selects the laser of narrow linewidth. The drive current and temperature keep constant, and only the drive current and temperature of the slave laser is adjusted, thereby realizes the frequency tuning and high stability of millimeter-wave signal. The temperature has a large change range for the frequency of the millimeter-wave signal, which can be used for rough adjustment. The adjustment range of the driving current to the frequency of the millimeter-wave signal is small but fast and approximately linear, so it can be used for fine adjustment. Accordingly, in this solution, when using the adjustable fiber delay line to tune the millimeter-wave signal, the temperature can be used for coarse adjustment first, and after the error signal voltage is less than a certain threshold, the control current is finely adjusted, which can ensure that the millimeter-wave signal is tuned in a wide range, and at the same time ensure the stability of the frequency of the millimeter-wave signal.
[0023] In the present embodiment, optical path delay phase detection structure includes a high-precision adjustable optical fiber delay line, the first optical path delay phase detection structure high-speed photodetector, the second optical path delay phase detection structure high-speed photodetector, a mixer and a low-pass filter. The low-pass filter outputs the error signal for subsequent circuit processing. The first optical path delay phase detection structure high-speed photodetector and the second optical path delay phase detection structure high-speed photodetector are identical in performance.
[0024] In the present embodiment, the effect of the high-precision adjustable optical fiber delay line is: one is to produces a certain time delay (denoted as ), when the optical signal modulated with radio frequency passes through the delay , the phase can occur 2f.sub.RF change, and then output the DC error signal after the phase detector composed of the mixer and the low-pass filter. Due to the physical characteristics of this kind of phase detector, only when the input phase difference is
k=1,2,3 . . . , the output error signal is 0. Therefore, the curve of the voltage of the error signal and the frequency of the radio frequency signal can be obtained, as shown in
At this time, the final locked frequency of the millimeter-wave signal is
By adjusting the delay of the optical fiber delay line, the tuned output of the millimeter-wave signal can be realized. For example, when the adjustable fiber delay line delay =10 ps is set, corresponding to only the RF signal frequency f.sub.RF=25 GHz generated by the above millimeter-wave signal generating structure, the error signal output by the low-pass filter will be 0, that is, the frequency is locked, as shown in
[0025] The above description of the embodiments is for the convenience of those of ordinary skill in the art to understand and apply the present disclosure. It will be apparent to those skilled in the art that various modifications to the above-described embodiments can be readily made, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present disclosure is not limited to the above-mentioned embodiments, and improvements and modifications made by those skilled in the art according to the disclosure of the present disclosure should all fall within the protection scope of the present disclosure.