Silicon-based spin-qubit quantum magnetometer and radar system with all electrical control

Abstract

Embodiments of the present disclosure provide a spin-qubit quantum magnetometer and radar apparatus, entirely implemented in silicon and with full electrical control. By default, each detection element of the silicon-based spin-qubit quantum magnetometer and radar apparatus with full electrical control of the invention is built around a Field Effect Transistor (FET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates.

Claims

1. A spin-qubit quantum magnetometer sensing device built around a field-effect transistor on silicon over insulator with all-electrical control through a back-gate and two front-gates.

2. The spin-qubit quantum magnetometer sensing device, as recited in claim 1, where the first front-gate is adjacent to the second front-gate along drain-source channel of the field-effect transistor and where the back-gate is used to control coupling between first and second front-gates through biasing.

3. The spin-qubit quantum magnetometer sensing device, as recited in claim 1, where the first corner front-gate is facing the second corner front-gate across drain-source channel of the field-effect transistor and where the back-gate is used to control coupling between first and second front-gates through biasing.

4. The spin-qubit quantum magnetometer sensing device, as recited in claim 2, where a magnetic field gets sensed via the biased first front gate through spin qubit manipulation of an underlying quantum dot.

5. The spin-qubit quantum magnetometer sensing device, as recited in claim 3, where a magnetic field gets sensed via the biased first front-gate through spin qubit manipulation of an underlying quantum dot.

6. The spin-qubit quantum magnetometer sensing device, as recited in claim 4, where the biased second front-gate is used for read-out of resulting spin qubit manipulation experienced by the first front-gate quantum dot via a second quantum dot sitting underneath the second front-gate through spin-to charge conversion.

7. The spin-qubit quantum magnetometer sensing device, as recited in claim 5, where the biased second front-gate is used for read-out of the resulting spin qubit manipulation experienced by the first front-gate quantum dot via a second quantum dot sitting underneath the second front-gate through spin-to charge conversion.

8. The spin-qubit quantum magnetometer sensing device, as recited in claim 4, where the biased second front-gate is used for read-out of the resulting spin qubit manipulation experienced by the first front-gate quantum dot via a second quantum dot sifting underneath the second front-gate through radio frequency gate reflectometry.

9. The spin-qubit quantum magnetometer sensing device, as recited in claim 5, where the biased second front-gate is used for read-out of the resulting spin qubit manipulation experienced by the first from-gate quantum dot via a second quantum dot sitting underneath the second front-gate through radio frequency gate reflectometry.

10. Multiple spin-qubit quantum magnetometer sensing devices, as recited in claim 3, placed in parallel to one another along drain-source channel of a field-effect transistor, and all connected to an antenna via a filter, an amplifier and a mixer, in order to form range bins of a spin-qubit quantum radar system for both targets range and speed calculation.

11. The spin-qubit quantum radar system, as recited in claim 10, where the spin-qubit quantum magnetometer sensing devices are connected to different set of antenna elements, amplifiers and mixers in order to further retrieve azimuthal and elevation angles of arrival of radar-echoes trough spatial phase shifting.

12. The quantum magnetometer sensing device, as recited in claim 1, where the back-gate is further used to reduce passive power contribution to heat dissipation of surrounding control electronics through adjustment of field-effect transistors threshold voltage and subthreshold slope.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

(1) A more complete appreciation of the present invention and many of the attendant advantages thereof will be readily obtained as the same becomes better understood by reference to the following detailed description when considered in connection with the accompanying drawings. In these drawings like reference numerals designate identical or corresponding parts throughout the several views.

(2) FIG. 1 shows a quantum illumination/radar from prior art with entangled photons source; FIG. 2 cross-section view along the FET transistor gate length shows an embodiment of the silicon-based spin-qubit quantum magnetometer and radar system according to the invention with the two from-gates, Manipulation (M) and Read-out (R) gate, adjacent to one another along the Drain-Source (DS) FET channel; FIG. 3 cross-section view along the FET transistor gate width illustrates another embodiment of the silicon-based spin-qubit quantum magnetometer and radar system according to the invention with the two front-gates, Manipulation (M) and Read-out (R) gate, placed across the Drain-Source (DS) FET channel and facing each other as corner gates; FIG. 4a shows, in a three-dimensional space, another embodiment of the silicon-based spin-qubit quantum magnetometer and radar system according to the invention with multiple range bins implemented through a series of face-to-face corner gates being placed in parallel along a Drain-Source channel and having those face-to-face corner gates connected to the same antenna via filters, amplifiers and optional mixer. FIG. 4b illustrates, in a three-dimensional space, another embodiment of the silicon-based spin-qubit quantum magnetometer and radar system according to the invention with multiple range bins implemented through a series of face-to-face corner gates being placed in parallel along a Drain-Source channel and having those face-to-face corner gates connected to different antenna elements via separate filters, amplifiers and optional mixers.

DETAILED DESCRIPTION OF THE INVENTION

(3) Referring to those drawings and more specifically to FIG. 2, each magnetometer sensing element (aka range bin magnetometer), in a preferred embodiment of the present invention, is built around a FET (Field Effect Transistor) on silicon (212) over insulator (201) over silicon (215) with a back-gate (214) as well as two front-gates, respectively called Manipulation gate (202) over silicon oxide (203) and Read-out (206) gate over silicon oxide (207), which are adjacent to one another along the silicon Drain (211)-Source (210) FET channel (212).

(4) After initialization of both front-gates into their quantum ground states, the Manipulation gate (202) of a given range bin first gets activated and biased via one input of the bias tree pin (204) before applying to that same gate the target-reflected microwave frequency over a fixed time duration via the other input of the bias tree pin (204). This microwave frequency will then induce a spin qubit rotation of the underlying Quantum Dot (205), that can be either electron or proton, between the Zeeman states at a Rabi frequency proportional to the magnitude of the returned echo signal in that given time period.

(5) At the end of a given range bin activation time, the corresponding Manipulation gate (202) gets disabled and the resulting spin rotation gets read via the second Quantum Dot (209) sitting underneath the Read-out gate (206). The coupling between Manipulation Quantum Dot (205) and Read-out Quantum Dot (209) being controlled via the Back-Gate (214) biasing input (216). Magnitude of the returned echo signal for that given range bin being then retrieved via Drain (211)-Source (210) current measurement (spin-to-charge conversion through Coulomb blockade and Spin Blockade effects) via a current-voltage converter (217).

(6) In another preferred embodiment of the present invention shown in FIG. 3, each magnetometer sensing element (aka range bin magnetometer) is built around a FET (Field Effect Transistor) on silicon (312) over insulator (301) over silicon (315) with a back-gate (314) as well as two front-gates, respectively called Manipulation gate (302) over silicon oxide (303) and Read-out (306) gate over silicon oxide (307), which are placed across the silicon Drain-Source FET channel (312) and facing each other as corner gates.

(7) After initialization of both front into their quantum ground suites, the Manipulation gate (302) of a given range bin first gets activated and biased via one input of the bias tree pin (304) before applying to that same gate the target-reflected microwave frequency over a fixed time duration via the other input of the bias tree pin (304). This microwave frequency will then induce a spin qubit rotation of the underlying Quantum Dot (305), that can be either electron or proton, between the Zeeman states at a Rabi frequency proportional to the magnitude of the returned echo signal in that given time period.

(8) At the end of a given range bin activation time, the corresponding Manipulation gate (302) gets disabled and the resulting spin rotation gets read via the second Quantum Dot (309) sitting underneath the Read-out gate (306). The coupling between Manipulation Quantum Dot (305) and Read-out Quantum Dot (309) being controlled via the Back-Gate (314) biasing input (316). Magnitude of the returned echo signal for that given range bin being then retrieved via RF (Radio Frequency) gate reflectometry, meaning shift in the resonance frequency of the attached LC resonator made of inductance (310), capacitor (311), input/output signal tree (308) and connected on the other end to ground (313).

(9) In the embodiment of the present invention shown in FIG. 4a, the above approach with face-to-face corner front gates for each magnetometer sensing element (aka range bin magnetometer) on silicon (412) over insulator (401) over silicon (415), gets scaled over multiple range bins by implementing a series of face-to-face corner gates in parallel along a silicon Drain (418)-Source (417) channel (412) and having the series of corner Manipulation gates (402), with their associated underlying Quantum Dots (405), connected to the same antenna (419) via one (420) or additional optional filters (423), amplifier (421) and optional mixer (422) with local oscillator. The series of corner Read-out gates (406), with their associated underlying Quantum Dots (409), being on their end each connected to separate LC resonators, each made of inductance (410), capacitor (411), input/output signal tree (408) and connected on the other end to ground (413). The coupling between each Manipulation Quantum Dot (405) and Read-out Quantum Dot (409) being here again controlled via their respective Back-Gate (414) biasing input (416). Such configuration allowing then the calculation of distance with very fine resolution over fast time and calculation of speed through Doppler phase changes over slow time.

(10) In the embodiment of the present invention illustrated in FIG. 4b, the above approach with face-to-face corner front gates for each magnetometer sensing element (aka range bin magnetometer) on silicon (412) over insulator (401) over silicon (415), gets scaled over multiple range bins by implementing a series of face-to-face corner gates in parallel along a silicon Drain (418)-Source (417) channel (412) and having the series of corner Manipulation gates (402), with their associated underlying Quantum Dots (405), connected to multiple antenna elements (419) via a series of one (420) or additional optional filters (425), amplifiers (421) and optional mixers (422) with local oscillator. The series of corner Read-out gates (406), with their associated underlying Quantum Dots (409), being on their end each connected to separate LC resonators, each made of inductance (410), capacitor (411), input/output signal tree (408) and connected on the other end to ground (413). The coupling between each Manipulation Quantum Dot (405) and Read-out Quantum Dot (409) being here again controlled via their respective Back-Gate (414) biasing input (416). Such configuration allowing then the calculation of distance with very fuse resolution over fast time, calculation of speed through Doppler phase changes over slow time, and calculation of azimuthal/elevation arrival angle through antenna phase shift and spatial frequency. This then leads to a complete 4-Dimension target detection with high precision and all electrically-controlled.

(11) While not illustrated, it should further be noted that the back gates can not only be used to control coupling between the two quantum dots of a given range bin, as previously described and illustrated, but also to reduce the heat dissipation of the surrounding control electronics, for cryo-CMOS (Complementary Metal Oxide Semiconductor) operation, through the adjustment of FET threshold voltage and subthreshold slope.

(12) Finally, and although the magnetometer sensing element illustrated in FIG. 2 and FIG. 3 is used as building element of a spin-qubit quantum radar system (e.g. range bin magnetometer), alternate embodiments may use it for other type of sensing applications. For instance, and according to non-illustrated embodiments of the present invention, the magnetometer sensing element illustrated in FIG. 2 and FIG. 3 could be used for the measurement of both static and dynamic magnetic field/flux through respectively a Ramsey or spin-echo sequence. As such, numerous modifications and variations of the present invention are possible in light of the above teachings. It is therefore to be understood that within the scope of the appended claims, the invention may be practiced otherwise than as specifically described herein.