Micro light-emitting-diode display panel and manufacturing method thereof

Abstract

The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points.

Claims

1. A micro light-emitting-diode display panel, comprising a base substrate, a pixel definition layer disposed on the base substrate, a pixel groove formed in the pixel definition layer, a resin adhesive layer disposed in the pixel groove, a micro light-emitting-diode embedded in the resin adhesive layer, and a first electrode point and a second electrode point on the pixel definition layer respectively located on both sides of the pixel groove; the micro light-emitting-diode comprising: a connection electrode, an LED semi-conductor layer disposed above the connection electrode and contacting with the connection electrode, a first electrode disposed on the LED semi-conductor layer and contacting with the LED semi-conductor layer, a second electrode disposed on the LED semi-conductor layer and contacting with the connection electrode, and an insulation-protective layer surrounding the LED semi-conductor layer; a portion of the connection electrode contacting with the second electrode and an upper surface of the LED semi-conductor layer are both exposed to an outside of the resin adhesive layer, and the first electrode and the second electrode are respectively connected to the first electrode point and second electrode point.

2. The micro light-emitting-diode display panel according to claim 1, further comprising: a TFT layer disposed between the base substrate and the pixel definition layer; the TFT layer comprises: an active layer disposed on the base substrate, a gate insulating layer covering the active layer and the base substrate, a gate electrode disposed on the gate insulating layer above the active layer, an intermediate insulating layer covering the gate electrode and the gate insulating layer, and a source electrode and a drain electrode disposed on the intermediate insulating layer and contacting with two ends of the active layer; the first electrode point further being contacted with the source electrode.

3. The micro light-emitting-diode display panel according to claim 1, wherein the resin adhesive layer is made of PMMA.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) For better understanding the technical proposals and other beneficial effects of the present invention, please refer the following detailed description of the present invention with the accompanying drawings.

(2) In drawings:

(3) FIGS. 1-8 are illustrative diagrams of the step S1 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(4) FIG. 9 is illustrative diagram of the step S2 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(5) FIGS. 10-11 are illustrative diagrams of the step S3 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(6) FIGS. 12 and 13 are illustrative diagrams of the step S4 and the step S5 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(7) FIG. 14 is illustrative diagram of the step S61 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(8) FIG. 15 is illustrative diagram of the step S62 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(9) FIG. 16 is illustrative diagram of the step S63 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention and also a structural illustrative diagram of the micro light-emitting-diode display panel according to the present invention.

(10) FIG. 17 is top-view illustration of the step S63 of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

(11) FIG. 18 is a flow diagram of a method for manufacturing a micro light-emitting-diode display panel according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(12) The technical proposals and the effects of the present invention will be described in further detail with reference to the below preferred embodiments of the present invention and their accompanying drawings.

(13) Please refer to FIG. 16, the present invention provides a micro light-emitting-diode display panel, which comprises a base substrate 41, a pixel definition layer 45 disposed on the base substrate 41, a pixel groove 15 formed in the pixel definition layer 45, a resin adhesive layer 13 disposed in the pixel groove 15, a micro light-emitting-diode 200 embedded in the resin adhesive layer 13, and a first electrode point 43 and a second electrode point 44 on the pixel definition layer 45 respectively located on both sides of the pixel groove 15.

(14) The micro light-emitting-diode 200 comprises: a connection electrode 6, an LED semi-conductor layer 2 disposing above the connection electrode 6 and contacting with the connection electrode 6, a first electrode 71 disposing on the LED semi-conductor layer 2 and contacting with the LED semi-conductor layer 2, a second electrode 72 disposing on the LED semi-conductor layer 2 and contacting with the connection electrode 6, and an insulation-protective layer 14 surrounding the LED semi-conductor layer 2.

(15) A portion of the connection electrode 6 contacting with the second electrode 72 and an upper surface of the LED semi-conductor layer 2 are both exposed to an outside of the resin adhesive layer 14. The first electrode 71 and the second electrode 72 are respectively connected to the first electrode point 43 and second electrode point 44.

(16) Specifically, the micro light-emitting-diode display panel further comprises a TFT layer 41 disposed between the base substrate 41 and the pixel definition layer 45. The TFT layer 42 comprises an active layer 421 disposed on the base substrate 41, a gate insulating layer 422 covering the active layer 421 and the base substrate 41, a gate electrode 423 disposed on the gate insulating layer 422 above the active layer 421, an intermediate insulating layer 424 covering the gate electrode 423 and the gate insulating layer 422, and a source electrode 425 and a drain electrode 426 disposing on the intermediate insulating layer 424 and contacting with two ends of the active layer 421.

(17) The first electrode point 43 further is contacted with the source electrode 425. Specifically, the first electrode contact 43 is in contact with the source electrode 425 through a via extending through the pixel defining layer 45.

(18) Specifically, the micro light-emitting-diode display panel further comprises a reflective metal layer 16 located at the bottom of the pixel groove 15.

(19) Specifically, the LED semi-conductor layer 2 comprises an N+ layer, a P+ layer, and a multi-quantum well layer in contact with the N+ layer and the P+ layer. The material of the connection electrode 6 may be selected from at least one of nickel (Ni), molybdenum (Mo), aluminum (Al), gold (Au), platinum (Pt), and titanium (Ti). The first electrode 71 and the second electrode 72 are transparent electrodes, which are made from indium tin oxide (ITO), indium zinc oxide (IZO), or a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (PEDOT: PSS). The insulation-protective layer 14 is made from silicon oxide (SiOx), silicon nitride (SiNx), or alumina (Al.sub.2O.sub.3).

(20) It is to be noted that the material of the resin adhesive layer 13 is a material having a large adhesive viscosity and can be cured by heat or ultraviolet (UV) light. Preferably, the resin adhesive layer 13 is made of poly Methyl methacrylate (PMMA). When the micro light-emitting-diode 200 is transferred, the resin adhesive layer 13 fixes the micro light-emitting-diode 200 to prevent the positional deviation of the micro light-emitting-diode 200. Meanwhile, the electrode of the bottom of the micro light-emitting-diode 200 to the top of the micro light-emitting-diode 200 is guided by the connection electrode 6, so that the two electrodes of the micro light-emitting-diode 200 are both at the top, not only the connection between the electrodes of the micro light-emitting-diode 200 and the electrode points can be facilitated, but also the difficulty of the electrode bonding of the micro light-emitting-diode 200 can be reduced and the reliability of the electrode bonding of the micro light-emitting-diode 200 can be improved.

(21) Please refer to FIG. 18, the present invention further provides a method for manufacturing a micro light-emitting-diode display panel, which comprises:

(22) Step 1; please refer to FIGS. 1-8, an original substrate 1 is provided. An LED semi-conductor layer 2 disposed on the original substrate 1, a first insulating layer 3 covering the LED semi-conductor layer 2 and the original substrate 1, and a connection electrode 6 disposed on the first insulating layer 3 and contacted with the LED semi-conductor layer 2 and the original substrate 1 are orderly formed.

(23) Specifically, the step S1 comprises:

(24) Step 11, please refer to FIG. 1, an original substrate 1 is provided. An LED semi-conductor thin film 2 is formed on the original substrate 1. A patterned first photoresist layer 10 is formed on the LED semi-conductor thin film 2.

(25) Step 12; please refer to FIG. 2, the LED semi-conductor thin film 2 is etched with the first photoresist layer 10 as a shielding, to form a LED semi-conductor layer 2.

(26) Step 13; please refer to FIGS. 3-4, a first insulating layer 3 is covered on the LED semi-conductor layer 2 and the original substrate 1. A patterned second photoresist layer 20 is formed on the first insulating layer 3.

(27) Step 14, please refer to FIG. 5, the first insulating layer 3 is etched with the second photoresist layer 20 as a shielding, to form a first via 4 and a second via 5, penetrating through the first insulating layer 3. The first via 4 and the second via 5 respectively reveal a portion of the LED semi-conductor layer 2 and a portion of the original substrate 1.

(28) Step 15; please refer to FIGS. 6-7, a first metal thin film 6 is formed on the first insulating layer 3, the LED semi-conductor layer 2, and the original substrate 1. A patterned third photoresist layer 30 is formed on the first metal thin film 6.

(29) Step 16, please refer to FIG. 8, the first metal thin film 6 is etched with the third photoresist layer 30 as a shielding, to form a connection electrode 6. The connection electrode 6 respectively is contacted with the LED semi-conductor layer 2 and the original substrate 1 through the first via 4 and the second via 5.

(30) Specifically, the original substrate 1 is a sapphire substrate (Al2O3), a silicon substrate (Si), a silicon carbide substrate (SiC), or a gallium nitride substrate (GaN), and the like. The LED semi-conductor layer 2 includes an N+ layer, a P+ layer and a multi-quantum well layer in contact with the N+ and P+ layers. The material of the connection electrode 6 may be a combination of one or more of metals such as nickel, molybdenum, aluminum, gold, platinum, and titanium. The material of the first insulating layer 3 is silicon oxide, silicon nitride, or alumina and the like.

(31) Step 2, please refer to FIG. 9, a transporting substrate 8 is provided. A surface of the transporting substrate 8 is bonded to the connection electrode 6. The original substrate 1 is peeled off, to transfer all of the LED semi-conductor layer 2, the first insulating layer 3, and the connection electrode 6 to the transporting substrate 8 and to expose the LED semi-conductor layer 2, the first insulating layer 3, and a portion of the connection electrode 6 contacted with the original substrate 1.

(32) Specifically, the transporting substrate 8 in the step 2 is a hard substrate having an adhesive layer on its surface. With the adhesive layer on the surface of the hard substrate to adhere the connection electrode 6, to make the connection electrode 6 and the transporting substrate 8 be adhered to each other. The original substrate 1 is peeled off with a Laser lift-off (LLO) technology, to transfer the LED semi-conductor layer 2, the first insulating layer 3, and the connection electrode 6 to the transporting substrate 8. The LED semi-conductor layer 2, the first insulating layer 3, and the connection electrode 6 are upside down, in other words, portions of the LED semi-conductor layer 2, the first insulating layer 3, and the connection electrode 6, contacted with the original substrate 1 are away from the transporting substrate 8, to expose the portions of the LED semi-conductor layer 2 and the connection electrode 6 contacted with the original substrate 1.

(33) Step 3, please refer to FIGS. 10-11, a second insulating layer 9 is formed on the exposed LED semi-conductor layer 2, the first insulating layer 3, and the connection electrode 6. A first electrode via 11 and a second electrode via 12 are formed on the second insulating layer 9, respectively exposing a portion of the LED semi-conductor layer 2 and a portion of the connection electrode 6 by the first electrode via 11 and the second electrode via 12, to obtain a micro light-emitting-diode semi-finished product 100.

(34) The second insulating layer 9 and the first insulating layer 3 together constitute an insulation-protective layer 14 surrounding the LED semi-conductor layer 2.

(35) Specifically, the step 3 comprises:

(36) Step 31, please refer to FIG. 10, a second insulating layer 9 is formed on the LED semi-conductor layer 2, the first insulating layer 3, and the connection electrode 6. A patterned fourth photoresist layer 40 is formed on the second insulating layer 9.

(37) Step 32, please refer to FIG. 11, the second insulating layer 9 is etched with the fourth photoresist layer 40 as a shielding, to form a first electrode via 11 and a second electrode via 12, penetrating through the second insulating layer 9. The first electrode via 11 and the second electrode via 12 respectively reveal a portion of the LED semi-conductor layer 2 and a portion of the connection electrode 6.

(38) Specifically, the material of the second insulating layer 9 is silicon oxide, silicon nitride, or alumina and the like.

(39) Step 4; please refer to FIGS. 12-13, a transfer head 300 and a receiving substrate 400 are provided. The receiving substrate 400 comprises: a base substrate 41, a pixel definition layer 45 disposed on the base substrate 41, a pixel groove 15 formed in the pixel definition layer 45, a resin adhesive layer 13 disposed in the pixel groove 15, and a first electrode point 43 and a second electrode point 44 on the pixel definition layer 45 respectively located on both sides of the pixel groove 15.

(40) Specifically, the receiving substrate 400 provided in the step S4 further comprises: a TFT layer 42 disposed between the base substrate 41 and the pixel definition layer 45.

(41) The TFT layer 42 comprises: an active layer 421 disposed on the base substrate 41, a gate insulating layer 422 covering the active layer 421 and the base substrate 41, a gate electrode 423 disposed on the gate insulating layer 422 above the active layer 421, an intermediate insulating layer 424 covering the gate electrode 423 and the gate insulating layer 422, and a source electrode 425 and a drain electrode 426 disposing on the intermediate insulating layer 424 and contacting with two ends of the active layer 421. The first electrode point 43 is further contacted with the source electrode 425. Specifically, the first electrode contact 43 is contacted with the source electrode 425 through a via extending through the pixel definition layer 45.

(42) Step 5, please refer to FIGS. 12-13, the micro light-emitting-diode semi-finished product 100 on the transporting substrate 8 are transferred onto the pixel groove 15 of the receiving substrate 400 by the transfer head 300, to press and fix the micro light-emitting-diode semi-finished product 100 in the resin adhesive layer 13. The portion of the connection electrode 6 exposed by the second electrode via 12 and an upper surface of the LED semi-conductor layer 2 are both exposed to outside of the resin adhesive layer 13.

(43) It is to be noted that the material of the resin adhesive layer 13 is a material having a large adhesive viscosity and can be cured by heat or ultraviolet (UV) light. Preferably, the resin adhesive layer 13 is made of poly Methyl methacrylate (PMMA). With pressing the micro light-emitting-diode semi-finished product 100 into the resin adhesive layer 13, the micro light-emitting-diode semi-finished product 100 is fixed, to prevent the positional deviation of the micro light-emitting-diode 200.

(44) Step 6, please refer to FIGS. 14-17, a first electrode 71 and a second electrode 72 are formed on the micro light-emitting-diode semi-finished product 100, to form the micro light-emitting-diode 200. The first electrode 71 is contacted with the LED semi-conductor layer 2 and the first electrode point 43. The second electrode 72 is contacted with the connection electrode 6 and the second electrode point 44.

(45) Specifically, the step 6 comprises:

(46) Step 61, please refer to FIG. 14, a conductive thin film 7 is formed on the micro light-emitting-diode semi-finished product 100, the pixel definition layer 45, the first electrode point 43, the second electrode point 44, and the resin adhesive layer 13.

(47) Step 62, please refer to FIG. 15, a patterned fifth photoresist layer 50 is formed on the conductive thin film 7.

(48) Step 63; please refer to FIGS. 16-17, the conductive thin film 7 is etched with the fifth photoresist layer 50 as a shielding, to form a first electrode 71 and a second electrode 72.

(49) Specifically, both the first electrode 71 and the second electrode 72 are transparent electrodes, such as ITO, IZO, or PEDOT: PSS.

(50) It is to be noted that, in the method for manufacturing a micro light-emitting-diode display panel, the electrode of the bottom of the micro light-emitting-diode 200 to the top of the micro light-emitting-diode 200 is guided by the connection electrode 6, so that the two electrodes of the micro light-emitting-diode 200 are both at the top, not only the connection between the electrodes of the micro light-emitting-diode 200 and the electrode points can be facilitated, but also the difficulty of the electrode bonding of the micro light-emitting-diode 200 can be reduced and the reliability of the electrode bonding of the micro light-emitting-diode 200 can be improved.

(51) As mentioned above, the present invention provides a micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode. The invention also provides a method for manufacturing a micro light-emitting-diode display panel, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode.

(52) As mentioned above, those of ordinary skill in the art, without departing from the spirit and scope of the present invention, can make various kinds of modifications and variations to the present invention. Therefore, all such modifications and variations are intended to be included in the protection scope of the appended claims of the present invention.