POLYCRYSTALLINE DIAMOND COMPACT

Abstract

A polycrystalline diamond compact including a cemented carbide substrate and a polycrystalline diamond layer bonded to the cemented carbide substrate. The polycrystalline diamond layer is nonplanar and includes a central part and a peripheral part surrounding the central part. The central part includes a protruding surface relative to the peripheral part. The protruding surface is spherical or planar. The peripheral part includes a plurality of radially-disposed ridges.

Claims

1. A polycrystalline diamond compact, comprising a cemented carbide substrate and a polycrystalline diamond layer bonded to the cemented carbide substrate; wherein: the polycrystalline diamond layer is nonplanar and comprises a central part and a peripheral part surrounding the central part; the central part comprises a protruding surface relative to the peripheral part; the protruding surface is spherical or planar; and the peripheral part comprises a plurality of radially-disposed ridges.

2. The polycrystalline diamond compact of claim 1, wherein the peripheral part comprises a chamfer.

3. The polycrystalline diamond compact of claim 1, wherein an area of the protruding surface accounts for 5-95% of a total surface area of the central part and the peripheral part.

4. The polycrystalline diamond compact of claim 3, wherein the area of the protruding surface accounts for 25-75% of the total surface area of the central part and the peripheral part.

5. The polycrystalline diamond compact of claim 1, wherein a vertical distance between a highest point and a lowest point of the protruding surface defines a height of the protruding surface, and a vertical distance between the highest point of the protruding surface and a bottom surface of the polycrystalline diamond layer defines a thickness of the polycrystalline diamond layer; the height of the protruding surface is between 1/50 and 9/10 of the thickness of the polycrystalline diamond layer.

6. The polycrystalline diamond compact of claim 5, wherein the height of the protruding surface is between 1/7 and 3/7 of the thickness of the polycrystalline diamond layer.

7. The polycrystalline diamond compact of claim 5, wherein the thickness of the polycrystalline diamond layer is between 0.5 and 8.0 mm.

8. The polycrystalline diamond compact of claim 5, wherein the height of the protruding surface is between 0.01 and 7.2 mm.

9. The polycrystalline diamond compact of claim 1, wherein the plurality of ridges each comprises a top angle which is between 50 and 179 facing the cemented carbide substrate.

10. The polycrystalline diamond compact of claim 9, wherein a radial length of the plurality of ridges on the peripheral part is between 1/50 and of a diameter of the polycrystalline diamond layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] FIG. 1 is a schematic diagram of a polycrystalline diamond compact as described in the disclosure;

[0017] FIG. 2 is a front view of the polycrystalline diamond compact in FIG. 1;

[0018] FIG. 3 is a schematic diagram of a polycrystalline diamond compact having a spherical central surface as described in the disclosure;

[0019] FIG. 4 is a front view of the polycrystalline diamond compact in FIG. 3;

[0020] FIG. 5 is a schematic diagram of the polycrystalline diamond compact having a spherical central surface as described in the disclosure;

[0021] FIG. 6 is a front view of the polycrystalline diamond compact in FIG. 5;

[0022] FIG. 7 is a schematic diagram of a polycrystalline diamond compact having a flat central surface as described in the disclosure; and

[0023] FIG. 8 is a front view of the polycrystalline diamond compact in FIG. 7.

DETAILED DESCRIPTION

[0024] To further illustrate, examples detailing a polycrystalline diamond compact are described below. It should be noted that the following examples are intended to describe and not to limit the description.

[0025] FIGS. 1-4 shows a polycrystalline diamond compact comprising a cemented carbide substrate 200 and a polycrystalline diamond layer 100 bonded to the cemented carbide substrate. The polycrystalline diamond layer 100 is nonplanar and comprises a central part 101 and a peripheral part 102 surrounding the central part 101. The central part 101 comprises a protruding surface relative to the peripheral part 101. The protruding surface is spherical or planar. The peripheral part 102 comprises a plurality of ridges 103. The peripheral part comprises a chamfer. Optionally, the peripheral part can also comprise no chamfer.

[0026] When the protruding surface of the central part 101 is spherical, the area of the protruding surface is one third of the upper surface area of the polycrystalline diamond layer 100, and the vertical distance between the highest point and the lowest point of the spherical central part (refer to the height of the protruding surface) is one fourth of the thickness of the polycrystalline diamond layer 100, as shown in FIGS. 1 and 2. The thickness of the polycrystalline diamond layer refers to the vertical distance between the highest point of the protruding surface and a bottom surface of the polycrystalline diamond layer. Optionally, the area of the protruding surface can be three fifth of the upper surface area of the polycrystalline diamond layer 100, and the vertical distance between the highest point and the lowest point of the spherical central part (refer to the height of the protruding surface) can be two fifth of the thickness of the polycrystalline diamond layer 100, as shown in FIGS. 3 and 4. Still optionally, the area of the protruding surface can be three fourth of the upper surface area of the polycrystalline diamond layer 100, and the vertical distance between the highest point and the lowest point of the spherical central part can be one fourth of the thickness of the polycrystalline diamond layer 100, as shown in FIGS. 5 and 6.

[0027] When the protruding surface of the central part 101 is planar, the area of the protruding surface is one fifth of the upper surface area of the polycrystalline diamond layer 100, and the vertical distance between the highest point and the lowest point of the planar central part is one sixth of the thickness of the polycrystalline diamond layer 100, as shown in FIGS. 7 and 8.

Example 1

[0028] The polycrystalline diamond compact has a diameter of 15.88 mm, a height of 13.6 mm, and the polycrystalline diamond layer has a thickness of 3.5 mm. The polycrystalline diamond compact is prepared by high temperature and high pressure sintering combined with laser processing. The protruding surface of the central part is spherical. The area of the protruding surface is one third of the upper surface area of the polycrystalline diamond layer. The height of the central part is one seventh of the thickness of the polycrystalline diamond layer. The peripheral part comprises a plurality of radially-disposed ridges. The ridges function as the cutter teeth of the polycrystalline diamond compact. Each ridge comprises a top angle which is 152 facing the cemented carbide substrate. The length of each ridge, that is, the width of the peripheral part, is 2.0 mm. The peripheral part comprises a chamfer. The width of the chamber is 0.5 mm.

[0029] The polycrystalline diamond compact is subject to an impact resistance test. The results show the impact resistance of the non-planar polycrystalline diamond compact is improved by 150% in contrast to conventional polycrystalline diamond compacts. When using the polycrystalline diamond compact to grind a rock with a hardness of 10 grade, the cutting resistance decreases by 40%, the removal efficiency of the rock increases by 60%, and no failure such as teeth collapse occurs.

Example 2

[0030] The polycrystalline diamond compact has a diameter of 15.88 mm, a height of 13.6 mm, and the polycrystalline diamond layer has a thickness of 3.5 mm. The polycrystalline diamond compact is prepared by high temperature and high-pressure sintering combined with laser processing. The protruding surface of the central part is spherical. The area of the protruding surface is one fifth of the upper surface area of the polycrystalline diamond layer. The height of the central part is one seventh of the thickness of the polycrystalline diamond layer. The peripheral part comprises a plurality of radially-disposed ridges. The ridges function as the cutter teeth of the polycrystalline diamond compact. Each ridge comprises a top angle which is 156 facing the cemented carbide substrate. The length of each ridge, that is, the width of the peripheral part, is 2.5 mm. The peripheral part comprises a chamfer. The width of the chamber is 0.5 mm.

[0031] The polycrystalline diamond compact is subject to an impact resistance test. The results show the impact resistance of the non-planar polycrystalline diamond compact is improved by 110% in contrast to conventional polycrystalline diamond compacts. When using the polycrystalline diamond compact to grind a rock with a hardness of 10 grade, the cutting resistance decreases by 38%, the removal efficiency of the rock increases by 55%, and no failure such as teeth collapse occurs.

[0032] It will be obvious to those skilled in the art that changes and modifications may be made, and therefore, the aim in the appended claims is to cover all such changes and modifications.