MANUFACTURING METHOD OF CERAMIC ELECTROSTATIC CHUCK

Abstract

The present invention provides a method for manufacturing a ceramic electrostatic chuck which enables high purity and minimum thickness variation of a dielectric layer formed of ceramics or composite ceramics. The method includes: forming grooves for electrode pattern formation in a dielectric layer formed of ceramics or composite ceramics and having a density of 95% or greater; forming an electrode pattern by filling the grooves with a metal; forming an activated bonding layer configured for joining on the dielectric layer; and joining an insulator layer, which is formed of ceramics or composite ceramics and has a density of 95% or greater, with the dielectric layer.

Claims

1. A method for manufacturing a ceramic electrostatic chuck, comprising: forming grooves for electrode pattern formation in a dielectric layer which consists of ceramics or composite ceramics and has a density of 95% or greater; forming an electrode pattern by filling the grooves with a metal; forming a first bonding layer configured for joining on the dielectric layer; polishing and activating the first bonding layer; and joining an insulator layer with the dielectric layer, wherein the insulator layer consists of ceramics or composite ceramics and has a density of 95% or greater, and wherein the insulator layer is provided with a second bonding layer thereon, the second bonding layer being polished and activated.

2. The method of claim 1, wherein a volume resistivity of each of the dielectric layer and the insulator layer consisting of ceramics or composite ceramics is 1.0E+8(cm) or greater.

3. The method of claim 1, wherein a total thickness of the joined first and second bonding layers is 50 m or less.

4. The method of claim 2, wherein a total thickness of the joined first and second bonding layers is 50 m or less.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG. 1 is a cross-sectional view of an electrostatic chuck manufactured according to an embodiment of the present invention.

[0010] FIG. 2 illustrates cross-sectional views of respective steps of the present invention.

[0011] FIG. 3 is a cross-sectional view of an electrostatic chuck manufactured according to another embodiment of the present invention.

[0012] FIG. 4 is a cross-sectional view of an electrostatic chuck manufactured according to yet another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] FIG. 1 is a cross-sectional view of an electrostatic chuck manufactured according to an embodiment of the present invention.

[0014] As shown in FIG. 1, an electrostatic chuck 1 includes: a dielectric layer 2, an electrode pattern 3-a, a bonding layer 4-a on dielectric layer side, a bonding layer 4-b on first insulator layer side, and a first insulator layer 5-a.

[0015] The dielectric layer 2 is a dielectric formed of a sintered body of a ceramic material or a composite ceramic material, which has a density of 95% and more. The ceramic material may be, for example, Al.sub.2O.sub.3, sapphire, Y.sub.2O.sub.3, AlN, Si.sub.3N.sub.4, etc. With regard to volume resistivity for the ceramic material or composite ceramic material of the sintered body, the dielectric layer and the insulator layers may have a volume resistivity of 1.0E+8(cm) or greater. Further, composite materials, into which SiC, TiO.sub.2, TiN, etc. are added for adjustment of resistance values, may be used for the dielectric layer and the insulator layers.

[0016] The electrode pattern 3-a is an electrode formed of a material, such as metals, embedded in grooves formed into a pattern in the dielectric layer 2. In the case that metals or their alloys are employed, for example, metals within the range from group IVB to group IB of the periodic table are used.

[0017] The bonding layer 4-a on dielectric layer side and the bonding layer 4-b on first insulator layer side are configured to join the dielectric layer 2 and the first insulator layer 5-a together. The bonding layer 4-a on dielectric layer side and the bonding layer 4-b on first insulator layer side are respectively formed of surface-activated ceramics. The thicknesses of the bonding layers are not specifically limited, but the total thickness of the bonding layers after being joined are preferably 50 m or less.

[0018] The insulator layer 5-a is an insulator formed of a sintered body of a ceramic material or a composite ceramic material, which has a density of 95% and more.

[0019] Next, referring to FIG. 2, a method of manufacturing a ceramic electrostatic chuck is described.

[0020] A ceramic material or composite ceramic material with a high purity is sintered for preparing a dielectric having a density of 95% or greater in advance.

[0021] As shown in (A) of FIG. 2, the sintered ceramic or composite ceramic dielectric having a density of 95% or greater is processed to have a flatness of 0.05 mm or less, and then processed to form a desired electrode pattern thereon, thereby forming the dielectric layer 2.

[0022] Further, as shown in (B) of FIG. 2, a metal layer 3-b functioned as an electrode is formed on a surface of the dielectric layer 2 on which the abovementioned grooves are formed. The metal layer 3-b may be formed using metallization methods such as plating, thermal spraying, chemical vapor deposition (CVD), or physical vapor deposition (PVD). The metal layer 3-b is preferably formed to have a thickness greater than the depth of the grooves. Next, as shown in (C) of FIG. 2, by grinding and polishing the surface on which the metal layer 3-b is formed, the remaining metal in the grooves is exposed to be the electrode pattern 3-a.

[0023] As shown in (D) of FIG. 2, the bonding layer 4-a on dielectric layer side, which is configured for attachment to the first insulator layer 5-a, is formed on a surface of the dielectric layer 2 on which the electrode pattern 3-a is formed. The bonding layer 4-a on dielectric layer side may be formed using film forming approaches such as CVD or PVD. The bonding layer 4-a on dielectric layer side is formed to have a film thickness greater than the surface roughness Rz of the surface on which the electrode pattern is formed.

[0024] Further, the first insulator layer 5-a to be bonded to the dielectric layer 2 is prepared in advance. Similar to the dielectric layer 2, the first insulator 5-a has the bonding layer 4-b on first insulator layer side formed thereon.

[0025] The bonding layer 4-a on dielectric layer side and the bonding layer 4-b on first insulator layer side are polished for adjusting the surface roughness thereof, such that there is no gap between the joined bonding layers 4-a and 4-b. The surface roughness is preferably 0.1 m or less.

[0026] After the adjustment of surface roughness has been performed, the bonding layer 4-a on dielectric layer side and the bonding layer 4-b on first insulator layer side are activated via plasma, etc. Such activating technique can be found in, for example, JP 2006-073780, the content of which is hereby incorporated by reference in its entirety for all purposes.

[0027] As a final stage, the surface-activated bonding layers are stacked and joined together at a low temperature and under a low load, thereby obtaining the electrostatic chuck 1 provided with the electrode pattern 3 therein, as shown in (E) of FIG. 2. Since sintered ceramics or composite ceramics can be joined at a low temperature and under a low load, and electrostatic chuck having a high purity and suppressed variation in thickness of the dielectric layer can be manufactured.

[0028] As further shown in FIG. 3, in the method of the present invention, in addition to the electrode disposed in the electrostatic chuck, a metallic component functioned as a heater may also be disposed in the electrostatic chuck. In the example shown in FIG. 3, a heater pattern 6 is first formed in the first insulator layer 5-a, followed by joining the first insulator layer 5-a with a second insulator layer 5-b. In such case, 4-c denotes a bonding layer on heater side, and 4-d denotes a bonding layer on second insulator layer side.

[0029] Further, as can be seen in FIG. 4, grooves are provided in the electrostatic chuck for introducing cooling gases, for example, to an absorbed surface of an absorbed object to be cooled. In the example shown in FIG. 4, introduction grooves 7 are formed in the first insulator layer 5-a, followed by joining the first insulator 5-a with the second insulator layer 5-b. In such case, 4-e denotes a bonding layer on introduction groove side, and 4-f denotes a bonding layer on second insulator layer side.

[0030] Although the present invention has been described in detail with reference to the preferred embodiments and drawings, those with ordinary skill in the art would understand that various modifications, changes, and equivalents can be made without departing from the spirit and scope of the present invention. However, these modifications, changes, and equivalents should also be included in the scope of the present invention.