Direct-current switching device
10490365 ยท 2019-11-26
Assignee
Inventors
Cpc classification
International classification
H01H9/54
ELECTRICITY
Abstract
A direct-current switching device for interrupting an electric direct current flowing along a medium or high-voltage current path, includes an electric circuit assembly having a mechanical switching device to be switched in the medium or high-voltage current path. The electric circuit assembly further has an LC circuit with an inductive component in order to force a current zero crossing in the mechanical switching device connected in the medium or high-voltage current path, a capacitive component for forming a resonant circuit being closed by the switching device, and a switchable semiconductor component for generating an excitation frequency exciting the resonant circuit. The switchable semiconductor component is disposed in the electric circuit assembly such that the semiconductor component constantly lies outside of the medium or high-voltage current path when the mechanical switching device is connected in the medium or high-voltage current path.
Claims
1. A direct-current switching device for interrupting a direct electric current flowing along a medium-voltage or high-voltage current path, the direct-current switching device comprising: an electric circuit configuration including a mechanical switching device to be switched in the medium-voltage or high-voltage current path, said electric circuit configuration, in order to force a current zero crossing in said mechanical switching device connected in the medium-voltage or high-voltage current path, additionally including: an LC circuit having at least one inductive component and at least one capacitive component forming a resonant circuit being closed by said mechanical switching device, and at least one switchable semiconductor component for generating an excitation frequency exciting said resonant circuit; said at least one switchable semiconductor component being disposed in said electric circuit configuration in such a way that said at least one switchable semiconductor component constantly always lies outside of the medium-voltage or high-voltage current path when said mechanical switching device is connected in the medium-voltage or high-voltage current path; and another part of said electric circuit configuration lying outside of said resonant circuit, said at least one switchable semiconductor component being disposed in said other part of said electrical circuit configuration; said other part of said electrical circuit configuration including an excitation oscillator circuit coupled to said resonant circuit for exciting an oscillation of said resonant circuit, said at least one switchable semiconductor component being disposed in said excitation oscillator circuit; and said excitation oscillator circuit including an LC-circuit, and said at least one switchable semiconductor component and said LC-circuit being connected to a half-bridge circuit.
2. The direct-current switching device according to claim 1, wherein said other part of said electrical circuit configuration includes an excitation oscillator circuit coupled to said resonant circuit for exciting an oscillation of said resonant circuit, said at least one switchable semiconductor component includes a plurality of switchable semiconductor components, and at least one of said switchable semiconductor components is disposed in said excitation oscillator circuit.
3. The direct-current switching device according to claim 1, wherein said excitation oscillator circuit is inductively coupled to said resonant circuit.
4. The direct-current switching device according to claim 1, wherein said resonant circuit has a different section, and said at least one switchable semiconductor component is disposed in said different section of said resonant circuit.
5. The direct-current switching device according to claim 4, wherein said different section of said resonant circuit is said LC-circuit.
6. The direct-current switching device according to claim 1, wherein said resonant circuit has a different section, said at least one switchable semiconductor component includes a plurality of switchable semiconductor components, and at least one of said switchable semiconductor components is disposed in said different section of said resonant circuit.
7. The direct-current switching device according to claim 6, wherein said different section of said resonant circuit is said LC-circuit.
8. The direct-current switching device according to claim 1, wherein said at least one switchable semiconductor component and said LC-circuit of said excitation oscillator circuit are connected to a half-bridge circuit or in a bridge circuit.
9. The direct-current switching device according to claim 1, wherein said circuit configuration has at least one current branch diverging from the medium-voltage or high-voltage current path, said at least one switchable semiconductor component being connected in said at least one current branch.
10. The direct-current switching device according to claim 1, wherein said circuit configuration has at least one current branch diverging from the medium-voltage or high-voltage current path, said at least one switchable semiconductor component includes a plurality of switchable semiconductor components, and at least one of said switchable semiconductor components is connected in said at least one current branch.
11. The direct-current switching device according to claim 1, wherein said circuit configuration includes an overvoltage arrester connected in parallel with said mechanical switching device.
12. The direct-current switching device according to claim 1, which further comprises at least one of a control or regulating device for coordinated activation of said mechanical switching device and said at least one switchable semiconductor component.
13. A direct-current switching device for interrupting a direct electric current flowing along a medium-voltage or high-voltage current path, the direct-current switching device comprising: an electric circuit configuration including a mechanical switching device to be switched in the medium-voltage or high-voltage current path, said electric circuit configuration, in order to force a current zero crossing in said mechanical switching device connected in the medium-voltage or high-voltage current path, additionally including: an LC circuit having at least one inductive component and at least one capacitive component forming a resonant circuit being closed by said mechanical switching device, and at least one switchable semiconductor component for generating an excitation frequency exciting said resonant circuit; said at least one switchable semiconductor component being disposed in said electric circuit assembly in such a way that said at least one switchable semiconductor component constantly always lies outside of the medium-voltage or high-voltage current path when said mechanical switching device is connected in the medium-voltage or high-voltage current path; and a different section of said resonant circuit, said different section of said resonant circuit is said LC-circuit, said at least one switchable semiconductor component including a plurality of switchable semiconductor components, and at least one of said switchable semiconductor components being disposed in said different section of said resonant circuit; said at least one switchable semiconductor component and said LC-circuit are connected to a half-bridge circuit or in a bridge circuit.
14. The direct-current switching device according to claim 13, which further comprises another part of said electrical circuit configuration lying outside of said resonant circuit, said at least one switchable semiconductor component being disposed in said other part of said electrical circuit configuration.
15. The direct-current switching device according to claim 14, wherein said other part of said electrical circuit configuration includes an excitation oscillator circuit coupled to said resonant circuit for exciting an oscillation of said resonant circuit, said at least one switchable semiconductor component being disposed in said excitation oscillator circuit.
Description
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
(1) Hereafter, exemplary embodiments of the invention are shown in schematic drawings, and then described in greater detail below. These show:
(2)
(3)
(4)
DESCRIPTION OF THE INVENTION
(5)
(6) The circuit arrangement 14 also has a further (circuit) part 32. This additional circuit part 32 comprises a direct-current and/or DC voltage source 34, a series circuit 36 of two semiconductor components 38, 40 connected to the DC current source 34, and a further LC-circuit 42 with a capacitive component 44 and an inductive component 46 for forming an excitation oscillator circuit 48. Capacitive and inductive components 44, 46 here are connected in series. This excitation oscillator circuit 48 is inductively coupled to the resonant circuit 20 via a transformer 50. The inductive component 46 of the additional LC-circuit 42 thus forms the primary side of the transformer 50 and the second of the inductive components 28 of the first LC circuit 22 forms the secondary side of the transformer 50. At least one of the semiconductor components 38, 40 is a switchable semiconductor component for generating an excitation frequency which excites the resonant circuit 20 extending through the switching device 16. This at least one switchable semiconductor component is arranged/interconnected in the electrical circuit assembly 14 in such a way that the semiconductor component always lies outside the medium- or high-voltage current path 12 when the mechanical switching device 16 is connected in said current path 12. The resonant circuit 20 can be selectively excited into oscillation by means of the excitation oscillator circuit 48 with the semiconductor components 38, 40 arranged therein, and is thus an active resonant circuit 20.
(7) The direct-current switching device 10 also has a control and/or regulating device 52 for the coordinated activation of the mechanical switching device 16 and the semiconductor components 38, 40. At the same time, via a corresponding sensor 54 this measures the alternating current in the resonant circuit 20. The corresponding signal cables between the control and/or regulation device 52 and the semiconductor components 38, 40, and/or the sensor 54 are drawn as dashed lines.
(8) In the alternative design of the direct-current switching device 10 shown in
(9) In these two resonant circuits 20, 48, depending on the requirements on the transformer inductance 28, 46, an additional inductance is added (for example the inductive component 26). In the second excitation oscillator circuit 48, using a half-bridge circuit 56 formed from the two semiconductor components 38, 40 (here implemented by way of example as two MOSFETs), an oscillation is excited, which is coupled via the transformer 50 into the one resonant circuit 20. The energy for the oscillation can be extracted either from an additional direct-current and/or DC voltage source 34, or else directly from the DC power network comprising the current path 12. When using an external direct-current and/or DC voltage source 34, the semiconductor components 38, 40 can be chosen and dimensioned independently of the voltage of the DC network. In this case, however, the transformer 50 must ensure a corresponding electrical isolation between the two resonant circuits 20, 48. The excitation oscillator circuit 48 is operated by the control and/or regulation device 52 such that the resonant circuit 20 oscillates in resonance. This may take place, for example, by changing over the semiconductor components 38, 40 in the excitation resonant circuit 48, as soon as the current in the resonant circuit 20 undergoes a zero-crossing. If, for example the current in the resonant circuit 20 is positive, then semiconductor component 38 is turned off and semiconductor component 40 is turned on; if, on the other hand, the current in the resonant circuit 20 is negative, then semiconductor component 38 is turned on and semiconductor component 40 is turned off. In this process, current and voltage in the resonant circuit 20 are in phase and the current can oscillate with maximum amplitude. In order to protect the circuit arrangement 14 against over-voltages during a turn-off operation and to absorb the energy present in the system, the surge arrester (for example a MO-varistor) 30 is integrated in parallel with the mechanical switch.
(10) This results in the following function:
(11) In normal operation, the mechanical switching device 16 is closed and the semiconductor components 38, 40 are not activated. The conduction losses of the entire direct-current switching device 10 are limited to the low Ohmic losses of the closed mechanical switching device 16.
(12) In the switched case, for example, in the event of a fault in the connected DC power network, the switching device 16 is opened. To generate an artificial current zero crossing, the two semiconductor components 38, 40 are activated accordingly, so that a current oscillation is superimposed on the direct current, which gives rise to an artificial current zero in the switching device 16 and therefore to an interruption of the current. Once the mechanical switching device 16 has interrupted the current, the activation of the semiconductor components can be switched off.
(13) Subsequently, the current commutates first onto the resonant circuit 20 and the capacitive component 24 is charged up. Once the capacitive component 24 has reached the voltage level of the surge arrester 30, the current commutates once again onto the parallel current path with the surge arrester 30, this absorbs the energy present in the connected network and ultimately brings the direct current down to zero. The switch-off process is thereby completed. In this design variant of the direct-current switching device 10 a bipolar operation without additionally reverse connected semiconductors is possible.
(14) The
(15) In the design variant of the direct-current switching device 10 shown in
(16) In normal operation, the mechanical switching device 16 is closed and neither of the two semiconductor components 38, 40 is activated. Here, too, the conduction losses are limited to the low Ohmic losses of the closed mechanical switching device 16.
(17) If the DC current I were to be switched off, the switching device 16 is opened. If the switching contacts of the switching device 16 are a sufficiently large distance apart from each other, so that the switching device 16 can isolate the applied DC voltage after a successful current interruption, the semiconductor components 38, 40 are turned alternately on and off (in practice, component 40 is first turned on and device 38 turned off). The switching frequency is selected (by the control and/or regulation device 52) such that the (active) resonant circuit 20 oscillates at resonance, to obtain a maximum possible current amplitude. If the current oscillation has a higher amplitude than the direct current I which is to be switched off, then artificially generated current zero crossings are produced in the switching device 16 and the direct current I can be interrupted. To control the steepness of the resulting recovering voltage (TRVtransient recovery voltage), by switching off semiconductor component 40 and simultaneously switching on semiconductor device 38 the resonant circuit 20 can remain connected in parallel after the current interruption in the mechanical switching device 16. Only then, the current commutates onto the resonant circuit 20 and charges the capacitive component 24. If the voltage level is reached, which causes the surge arrester 30 to have a low impedance, the current once again commutates onto the parallel current path with the surge arrester 30 and the latter ultimately brings the direct current I to zero. The shutdown process is thus complete.
(18) If a DC switch according to variant two is used in a DC power supply with a changing current direction (bipolar operation), then an interconnection according to
(19) In this direct-current switching device 10, in the switched case during the activation of the semiconductor components 38, 40, 60, 62, depending on the direction of current flow in the current path 12, one of the two semiconductor components 38, 60 directly connected to the current path 12 must remain permanently switched on during the switching operation, so that the current oscillation described above can be generated by the two opposite semiconductor components 60, 62; 38, 40. The basic operating and switching behaviour can otherwise be implemented in an equivalent manner to the switch concept of the direct-current switching device 10 shown in
(20) In principle, in the DC switching concepts presented in
(21) Instead of the individual mechanical switching device 16 shown in the exemplary embodiments, this can alternatively be replaced in the direct-current switching device 10 by a series connection of a plurality of mechanical switching devices 16 that can be connected in the medium- or high-voltage current path 12. By means of such a series circuit, even when using standard switching devices 16 the corresponding direct-current switching device 10 can be designed to be applicable to high-voltage current paths 12.
REFERENCE NUMERALS
(22) 10 direct-current switching device 12 current path 14 circuit arrangement 10 16 switching device, mechanical 18 circuit breaker 20 resonant circuit 22 LC-circuit 24 component, capacitive 26 component, inductive 28 component, inductive 30 surge arrester 32 part of circuit, additional 34 direct-current and/or DC voltage source 36 series circuit 38 semiconductor component, switchable 40 semiconductor component, switchable 42 LC-circuit, additional 44 component, capacitive 46 component, inductive 48 excitation oscillator circuit 50 transformer 52 control and/or regulation device 54 sensor 56 half-bridge circuit 58 series circuit 60 semiconductor component, switchable 62 semiconductor component, switchable 64 full bridge circuit I direct current E earth