SURFACE ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME

Abstract

A method for fabricating a surface acoustic wave (SAW) device includes the steps of forming a buffer layer on a substrate, forming a high velocity layer on the buffer layer, forming a medium velocity layer on the high velocity layer, forming a low velocity layer on the medium velocity layer, forming a piezoelectric layer on the low velocity layer, and forming an electrode on the piezoelectric layer. Preferably, the buffer layer includes silicon oxide, the high velocity layer includes graphene, the medium velocity layer includes silicon oxynitride, and the low velocity layer includes titanium oxide.

Claims

1. A method for fabricating a surface acoustic wave (SAW) device, comprising: forming a high velocity layer on a substrate; forming a medium velocity layer on the high velocity layer; forming a low velocity layer on the medium velocity layer; forming a piezoelectric layer on the low velocity layer; and forming an electrode on the piezoelectric layer.

2. The method of claim 1, further comprising forming a buffer layer on the substrate before forming the high velocity layer.

3. The method of claim 2, wherein the buffer layer comprises silicon oxide.

4. The method of claim 1, wherein the high velocity layer comprises graphene.

5. The method of claim 1, wherein the high velocity layer comprises boron carbide.

6. The method of claim 1, wherein the high velocity layer comprises silicon nitride.

7. The method of claim 1, wherein the medium velocity layer comprises silicon oxynitride (SiON).

8. The method of claim 1, wherein the medium velocity layer comprises silicon oxycarbonitride (SiOCN).

9. The method of claim 1, wherein the low velocity layer comprises titanium oxide (TiO.sub.2).

10. The method of claim 1, wherein the low velocity layer comprises silicon oxycarbide (SiOC).

11. A surface acoustic wave (SAW) device, comprising: a high velocity layer on a substrate; a medium velocity layer on the high velocity layer; a low velocity layer on the medium velocity layer; a piezoelectric layer on the low velocity layer; and an electrode on the piezoelectric layer.

12. The SAW device of claim 11, further comprising a buffer layer between the substrate and the high velocity layer.

13. The SAW device of claim 12, wherein the buffer layer comprises silicon oxide.

14. The SAW device of claim 11, wherein the high velocity layer comprises graphene.

15. The SAW device of claim 11, wherein the high velocity layer comprises boron carbide.

16. The SAW device of claim 11, wherein the high velocity layer comprises silicon nitride.

17. The SAW device of claim 11, wherein the medium velocity layer comprises silicon oxynitride (SiON).

18. The SAW device of claim 11, wherein the medium velocity layer comprises silicon oxycarbonitride (SiOCN).

19. The SAW device of claim 11, wherein the low velocity layer comprises titanium oxide (TiO.sub.2).

20. The SAW device of claim 11, wherein the low velocity layer comprises silicon oxycarbide (SiOC).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0006] FIGS. 1-2 illustrate a method for fabricating a SAW device according to an embodiment of the present invention.

DETAILED DESCRIPTION

[0007] Referring to FIGS. 1-2, FIGS. 1-2 illustrate a method for fabricating a SAW device according to an embodiment of the present invention. As shown in FIG. 1, a substrate 12 made of semiconductor material is first provided, in which the semiconductor material could be selected from the group consisting of silicon (Si), germanium (Ge), Si—Ge compounds, silicon carbide (SiC), and gallium arsenide (GaAs). Next, a buffer layer 14 is formed on the surface of the substrate 12, in which the buffer layer 14 is preferably made of dielectric material such as silicon oxide, but not limited thereto.

[0008] Next, a high velocity layer 16 is formed on the surface of the buffer layer 14, a medium velocity layer 18 is formed on the surface of the high velocity layer 16, a low velocity layer 20 is formed on the surface of the medium velocity layer 18, and a piezoelectric layer 22 is formed on the surface of the low velocity layer 20. In this embodiment, the buffer layer 14 is disposed to release stress created by the device while each of the high velocity layer 16, the medium velocity layer 18, and the low velocity layer 20 is disposed with corresponding acoustic velocity. Preferably, the acoustic structure made by the combined three layers 16, 18, 20 could be used to adjust the acoustic transmission of the SAW device while reducing disturbance or interference so that acoustic waves could be diffused out much more smoothly.

[0009] In this embodiment, the high velocity layer 16 preferably includes graphene, boron carbide, silicon nitride, or combination thereof, the medium velocity layer 18 includes silicon oxynitride (SiON), silicon oxycarbonitride (SiOCN), or combination thereof, the low velocity layer 20 includes titanium oxide (TiO.sub.2), silicon oxycarbide (SiOC), or combination thereof, and the piezoelectric layer 22 includes lithium niobate (LiNbO.sub.3), lithium tantalite (LiTaO.sub.3), or combination thereof.

[0010] Next, as shown in FIG. 2, a plurality of electrodes 24 are formed on the surface of the piezoelectric layer 22. In this embodiment, the formation of the electrodes 24 could be accomplished by first performing a deposition process such as chemical vapor deposition (CVD) process to form a metal layer (not shown) on the surface of the piezoelectric layer 22, and then conducting a pattern transfer or photo-etching process by using a patterned mask such as patterned resist to remove part of the metal layer so that the remaining metal layer forms the electrodes 24 on the surface of the piezoelectric layer 22. Structurally, the plurality of electrodes 24 formed at this stage are protruding above the surface of the piezoelectric layer 22 and similar to the aforementioned embodiment, the metal layer or the electrodes 24 are made of conductive or metal material including copper, aluminum, gold, or combination thereof.

[0011] Typically, currently SAW device only includes a high velocity layer disposed on the surface of the substrate and/or a low velocity layer disposed on the surface of the high velocity layer. However, due to material characteristic of the high velocity layer poor adhesion has often be found between the high velocity layer and surface of the substrate. To resolve this issue, the present invention preferably forms an additional buffer layer made of silicon oxide between the substrate and high velocity layer for achieving better adhesion. Moreover, according to another embodiment of the present invention, it would also be desirable to form an additional medium velocity layer 18 made of SiON or SiOCN between the high velocity layer and low velocity layer. By combining the high velocity layer, the medium velocity layer, and the low velocity layer altogether to form a composite acoustic structure with an acoustic gradient, the quality and smoothness of acoustic transmission between layers could be improved substantially.

[0012] Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.