Reduced Spatial/Temporal Overlaps to Increase Temporal Overlaps to Increase Precision in Focused Ion Beam FIB Instruments for Milling And Imaging and Focused Ion Beams for Lithography

Abstract

A beam control method is provided that can be implemented with any hardware system for imaging and/or cutting such as SEM/FIB/HIM or charged particle lithography which alleviates the deposited energy overlap between pixels to increase resolution and precision while reducing damage. The method includes scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, which can include the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.

Claims

1. A method of scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, comprising the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.

2. The method according to claim 1, wherein a structured random scanning pattern is used wherein the width of the deposited/damaged/milled/cut region can be minimised.

3. The method according to claim 2, wherein the amount of overlap is calculated by $\frac{\partial \phi }{\partial t}=D{\nabla }^2\phi +f,$ or other more complex methods at every pixel in the system, wherein the first term of the equation, D∇.sup.2φ, calculates the amount of beam influence/damage is diffusing away from the pixel, and the second term, ƒ, is the amount of influence at that pixel created by the incident beam, wherein the amount of beam influence that is deposited is determined by the probe location, which is generated via the scanning pattern, and beam broadening, which is governed by, if the pixel is within the area of irradiation, beam influence is added $\begin{array}{cc}\frac{\partial \phi }{\partial t}=D{\nabla }^2\phi +f& \left(\text{?}\right)\end{array}$ $\text{?}\text{indicates text missing or illegible when filed}$ where D is the diffusion constant associated with the beam influence and φ(x,y,z,t) is defined as the beam influence per unit volume, and ƒ is the source term, wherein beam broadening is defined by: $\begin{array}{cc}b=8\times {10}^{-12}\frac{Z}{E_0}{\left(N_v\right)}^{1/2}{T}^{3/2}& \left(\text{?}\right)\end{array}$ $\text{?}\text{indicates text missing or illegible when filed}$ where b is the amount of beam broadening and T is the sample thickness, both in m, Z is the atomic number, E.sub.0 is the beam energy, and N.sub.v is the number of atoms/m.sup.3.

4. A method of scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, comprising the step of: for each scanned pixel in a scan pattern, using scanning software, separating the location of the scanned pixel from the adjacent scanned pixel considering time of scanning and space between the scanned pixel and the adjacent scanned pixel, to minimize beam overlap caused by beam influence plus beam broadening; and using a compressive sensing algorithm, filling in the missing scanned pixels.

5. The method according to claim 4, wherein a structured random scanning pattern is used wherein the width of the deposited/damaged/milled/cut region can be minimised.

6. The method according to claim 5, wherein the amount of overlap is calculated by $\frac{\partial \phi }{\partial t}=D{\nabla }^2\phi +f,$ at every pixel in the system, wherein the first term of the equation, D∇.sup.2φ, calculates the amount of beam influence/damage is diffusing away from the pixel, and the second term, ƒ, is the amount of influence at that pixel created by the incident beam, wherein the amount of beam influence that is deposited is determined by the probe location, which is generated via the scanning pattern, and beam broadening, which is governed by, if the pixel is within the area of irradiation, beam influence is added $\begin{array}{cc}\frac{\partial \phi }{\partial t}=D{\nabla }^2\phi +f& \left(\text{?}\right)\end{array}$ $\text{?}\text{indicates text missing or illegible when filed}$ where D is the diffusion constant associated with the beam influence and φ(x,y,z,t) is defined as the beam influence per unit volume, and ƒ is the source term, wherein beam broadening is defined by: $\begin{array}{cc}b=8\times {10}^{-12}\frac{Z}{E_0}{\left(N_v\right)}^{1/2}{T}^{3/2}& \left(\text{?}\right)\end{array}$ $\text{?}\text{indicates text missing or illegible when filed}$ where b is the amount of beam broadening and T is the sample thickness, both in m, Z is the atomic number, E.sub.0 is the beam energy, and N.sub.v is the number of atoms/m.sup.3.

7. The method according to claim 4, wherein the method is applied to multi-beam instruments, including an ion beam and an electron beam operated independently.

8. The method according to claim 7, wherein the ion beam and electron beam are operated concurrently, each using a different sub-sampled part of a 2D array.

9. The method according to claim 8, wherein the electron beam scans a random percentage of the pixels in the array and the ion beam scans the remaining pixels in the array.

10. The method according to claim 8, wherein both the electron beam and the ion beam scan a percentage of the pixels, which pixels could overlap as long as they are not at the same pixel at the same time.

11. The method according to claim 8, wherein the ion beam performs milling and a sub-sampled electron beam is implemented to provide a fast image acquisition during milling.

12. The method according to claim 7, wherein the ion beam performs milling and the electron beam can be used to adapt the ion beam to mill only the areas of interest, the ion beam being controlled from the image of the electron beam.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] FIG. 1 is a diagram of a prior art process of how FIB and/or charged particle lithography is used to etch a sample.

[0015] FIG. 2 is diagram of the process of lithography.

[0016] FIG. 3A is a diagrammatic side sectional view of a workpiece subjected to a processing method not of the present invention.

[0017] FIG. 3B is a diagrammatic side sectional view of a workpiece subjected to a processing method of the present invention.

[0018] FIG. 4A is a bottom view of the workpiece shown in FIG. 3A, subjected to a process not in accordance with the present invention.

[0019] FIG. 4B is a bottom view of the workpiece shown in FIG. 3A subjected to the processing method of the present invention.

[0020] FIGS. 5A-5J are diagrams of scanning patterns where neighboring pixels are removed from the scanning process.

[0021] FIG. 6 is a diagram comparing the results of the ion overlap regions for the raster scan with the sub-sampled random scan.

DETAILED DESCRIPTION

[0022] While this invention is susceptible of embodiment in many different forms, there are shown in the drawings, and will be described herein in detail, specific embodiments thereof with the understanding that the present disclosure is to be considered as an exemplification of the principles of the invention and is not intended to limit the invention to the specific embodiments illustrated.

[0023] A method according to the invention alleviates overlap damage to pixels.

[0024] The amount of overlap is calculated by using equation 1, where the “influence” of the beam per pixel per time step can be calculated at every pixel in the system. The first term of the equation, D∇.sup.2φ, calculates the amount of beam influence/damage is diffusing away from the pixel, and the second term, ƒ, is the amount of influence at that pixel created by the incident beam. The amount of beam influence that is deposited is determined by the probe location, which is generated via the scanning pattern, and beam broadening, which is governed by equation 2. If the pixel is within the area of irradiation, beam influence is added

[00001]$\begin{array}{cc}\frac{\partial \phi }{\partial t}=D{\nabla }^2\phi +f& \left(1\right)\end{array}$

where D is the diffusion constant associated with the beam influence and φ(x,y,z,t) is defined as the beam influence per unit volume. The source term, ƒ, is analogous to the incident beam dimension (i.e., probe size) that adds beam influence to the system. Beam broadening is defined by:

[00002]$\begin{array}{cc}b=8\times {10}^{-12}\frac{Z}{E_0}{\left(N_v\right)}^{1/2}{T}^{3/2}& \left(2\right)\end{array}$

[0025] where b is the amount of beam broadening and T is the sample thickness, both in m, Z is the atomic number, E.sub.0 is the beam energy, and N.sub.v is the number of atoms/m.sup.3. As mentioned previously diffusion profile overlap and beam broadening overlap, herein referred to jointly as beam overlap, happens in three ways—point-to-point, line-to-line, and scan-to-scan.

[0026] Equation 1 has the form of any interaction between a charge beam and/or electromagnetic radiation with a solid/liquid sample. This approach of minimizing the overlapped area/volume should therefore allow for increased precision in a wide range of applications of this approach, including e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging and FIB.

[0027] A summary of the cumulative effect of this overlap is shown in FIGS. 3A-4B.

[0028] FIG. 3A is a diagrammatic side sectional view of a workpiece subjected to a processing method not of the present invention, where the overlapping influence is seen in electron beam instruments used for imaging (not related to the lithography mechanisms in this application).

[0029] FIGS. 3A and 4A illustrate small step separations between successive sampling points causes beam overlap due to beam broadening and/or diffusion effects. Increasing the step separation beyond a certain value reduces the effects of beam overlap as shown in FIG. 3B and 4B.

[0030] The size of the overlap region is dependent on the energy of the incident particles, the diffusion of the incident particles throughout the sample and the diffusion/interaction of any damage/radiation products created by the incident beam in the sample being imaged/milled/cut. The value of all these parameters (the diffusion parameters are specimen dependent) determines how far apart the sequential scan positions should be set to avoid the extra effect of the beam overlap, i.e. what the control parameter should be to minimise the effect.

[0031] For any scanning pattern, therefore, the optimal approach that will minimize the effect of the beam overlap process is to scan the beam ensuring that there is the largest difference in time and space between consecutive beam locations. Structured scanning patterns giving a “random” distribution of illuminated pixels are shown in FIGS. 5A-5J. Such patterns are almost identical to the fully random pattern that would be used by compressive sensing algorithms to maximally reconstruct an image from a sub-sampled acquisition. Compressive sensing algorithms are disclosed in U.S. Pat. Nos. 10,224,175 and 10,256,072 herein incorporated by reference to the extent that they are not contrary to the present disclosure. If a pattern has a reduced number of sampled pixels used, then the width of the deposited/damaged/milled/cut region can be minimised. Using the equations here for typical energy and scan parameters for a commercial FIB/lithography system, FIG. 6 shows the line-width of a FIB cut can be reduced significantly at the highest spatial resolution (i.e. when the pixel step separation is smallest) by using a random scan that minimizes the spatial/temporal overlaps.

[0032] FIGS. 5A and 5F are images of random sampled patterns without the optimal approach that will minimize the effect of the beam overlap.

[0033] FIGS. 5B-5E and 5G-5J illustrate a set of randomly sampled patterns, each can be performed sequentially to fill all pixels in the scan area with increasing space/time between neighbouring pixels. FIGS. 5E and 5J represent random scanning with the maximum space/time between neighbouring pixels. In FIGS. 5B-5E and 5G-5J neighboring pixels are removed from the scanning process.

[0034] Viewing FIGS. 5A-5E, more pixels are removed from left to right, meaning that the FIG. 5E has less “beam overlap influence” than FIG. 5A. For example, FIG. 5A is an image representing a 100% random sampled pattern. FIG. 5B is an image representing a 50% random sampled pattern, a reduction in sampled pixels to minimize the effect of the beam overlap. FIG. 5C is an image representing a 25% random sampled pattern, a further reduction in sampled pixels to minimize the effect of the beam overlap. FIG. 5D is an image representing a 12% random sampled pattern, a further reduction in sampled pixels to minimize the effect of the beam overlap. FIG. 5E is an image representing a 6% random sampled pattern, a further reduction in sampled pixels to minimize the effect of the beam overlap. The scans of FIGS. 5A-5E represent random “walk” scans wherein the random selection of pixels is only along the Y axis (vertical axis in the Figures) wherein the scan sequences in structured fashion through the X axis (horizontal axis in the Figures). The scans shown in FIGS. 5A-5E are for a “line-hop” acquisition where hysteresis in the scan system does not allow for complete random movements of the ion beam.

[0035] Viewing FIGS. 5F-5J, more pixels are removed from left to right, meaning that the FIG. 5J has less “beam overlap influence” than FIG. 5F. For example, FIG. 5F is an image representing a 100% sampled pattern. FIG. 5G is an image representing a 50% random sampled pattern, a reduction in sampled pixels to minimize the effect of the beam overlap. FIG. 5H is an image representing a 25% random sampled pattern, a further reduction in sampled pixels to minimize the effect of the beam overlap. FIG. 51 is an image representing a 12% random sampled pattern, a further reduction in sampled pixels to minimize the effect of the beam overlap. FIG. 5J is an image representing a 6% random sampled pattern, a further reduction in sampled pixels to minimize the effect of the beam overlap. The scans of FIGS. 5F-5J represent random scans wherein the random selection of pixels is along both the Y axis and the X axis.

[0036] FIG. 6 illustrates that by performing a structured random scanning where the time between neighbouring pixels in the scan area is maximised, the beam overlap can be reduced and the width of the milled/cut/transformed area/volume can be reduced.

[0037] FIG. 6 is a diagram comparing the results of the ion overlap regions for the raster scan with the sub-sampled random scan. Specifically, for the highest magnification scans, i.e., where the pixels are smaller and closer together, the random scan results in a narrower line width. This is due to a reduction in the overlap influence effects and results in any lithographic process having higher resolution/precision.

[0038] A method of the present invention comprises the steps of:

[0039] determining the workpiece material and thickness;

[0040] determining the beam influence of the scanning beam according to

[00003]$\frac{\partial \phi }{\partial t}=D{\nabla }^2\phi +f;$

[0041] for the material and the thickness determining the beam broadening of the scanning beam according to

[00004]$b=8\times {10}^{-12}\frac{Z}{E_0}{\left(N_v\right)}^{1/2}{T}^{3/2}$

[0042] for each scanned pixel in a scan pattern, using scanning software, separating the location of the scanned pixel to minimize beam overlap caused by beam influence plus beam broadening, from the adjacent scanned pixel; and

[0043] using a compressive sensing algorithm, filling in the missing scanned pixels.

[0044] The method can further be enhanced by starting with a random scan sequence, either with a random scan along two dimensions X and Y; or a random scan only along one dimension X or Y.

[0045] The exemplary methods of the invention can be applied to multi-beam instruments—a FIB is typically a dual beam instrument, while a HIM can be a tri-beam instrument (this means that the electron beam, and ion beams operate independently at the same time).

[0046] The ion beam(s) and electron beam can operate at the same time, each using a different sub-sampled part of the 2D array—for example the electron beam could use a random 50% of the pixels in the array and the ion beam could use the other 50%. Note that this doesn't have to add up to 100%—all beams could use a random 10% of the pixels, which could overlap as long as they are not at the same pixel at the same time. The advantage here is there is no overlap of the beams (and the effect on the image/milling that would cause), making them more precise.

[0047] A sub-sampled electron beam could be implemented to provide a fast image acquisition during milling. The electron beam could be as low as 1% sampled, which has a minimal effect on the ion beam. This means that the electron image could be up to 100 times faster than the ion scan causing the milling, i.e., the ion dynamics can be imaged during the scan rather than after the scan. The ion beam raster could also be from 100% down to below 1%.

[0048] As the sub-sampled electron beam image is faster than the ion beam milling approach (this also can be applied to the ion beam in the HIM that is used for SIMS), the electron beam can be used to adapt the scan to mill dynamically and continuously only the areas of interest, i.e., if something is observed going wrong/right in the image, the FIB beam can be controlled.

[0049] From the foregoing, it will be observed that numerous variations and modifications may be effected without departing from the spirit and scope of the invention. It is to be understood that no limitation with respect to the specific apparatus illustrated herein is intended or should be inferred.