METHOD AND DEVICE FOR TRANSFERRING A TRANSFER LAYER

Abstract

The invention relates to a device for the transfer of a transfer layer from a substrate, in particular from a growth substrate, to a carrier substrate.

Claims

1-10. (canceled)

11. A method for the transfer of a transfer layer from a growth substrate to a carrier substrate, the method comprising: charging the transfer layer and/or the growth substrate with charge carriers; and charging the carrier substrate with ions that are charged oppositely to the charge carriers of the transfer layer and/or the growth substrate, wherein an electromagnetic force (F) is generated between the transfer layer and/or the growth substrate and the carrier substrate due to the oppositely charged ions and the charge carriers.

12. The method according to claim 11, wherein the transfer layer is a graphene layer.

13. The method according to claim 11, wherein the carrier substrate includes a film, wherein the film is stretched in a frame, and wherein the film receives the transfer layer.

14. The method according to claim 11, wherein a roughness of a surface of the growth substrate is less than 100 .Math.m.

15. The method according to claim 11, wherein a surface of the growth substrate is monocrystalline.

16. The method according to claim 11, wherein the growth substrate includes a first material that is coated with a second material for growth of the transfer layer.

17. The method according to claim 11, wherein the transfer layer is contacted by the carrier substrate, and wherein the ions charged in the carrier substrate are concentrated close to the transfer layer such that the transfer layer detaches from the growth substrate and adheres to the carrier substrate.

18. The method according to claim 11, wherein the electromagnetic force (F) lies between 0.01 J/m2 and 1000 J/m2.

19. A device for the transfer of a transfer layer from a growth substrate to a carrier substrate, the device comprising: first charging means for charging the transfer layer and/or growth substrate with charge carriers; and second charging means for charging the carrier substrate with ions that are charged oppositely to the charge carriers of the transfer layer and/or the growth substrate, wherein an electromagnetic force (F) is generated between the transfer layer and/or the growth substrate and the carrier substrate due to the oppositely charged ions and the charge carriers.

20. The device according to claim 19, further comprising: a chamber comprising a substrate holder arranged therein, the substrate holder being configured to produce an electrically conductive connection to the growth substrate.

21. The device according to claim 19, wherein the transfer layer is a graphene layer.

22. The device according to claim 19, wherein the carrier substrate includes a film, wherein the film is stretched in a frame, and wherein the film receives the transfer layer.

23. The device according to claim 19, wherein a surface of the growth substrate is monocrystalline.

24. The device according to claim 19, wherein the growth substrate includes a first material that is coated with a second material for growth of the transfer layer.

25. The method according to claim 14, wherein the roughness of the surface of the growth substrate is less than 10 .Math.m.

26. The method according to claim 25, wherein the roughness of the surface of the growth substrate is less than 1 .Math.m.

27. The method according to claim 26, wherein the roughness of the surface of the growth substrate is less than 100 nm.

28. The method according to claim 18, wherein the electromagnetic force (F) lies between 0.1 J/m2 and 800 J/m2.

29. The method according to claim 28, wherein the electromagnetic force (F) lies between 1 J/m2 and 500 J/m2.

30. The method according to claim 29, wherein the electromagnetic force (F) lies between 50 J/m2 and 100 J/m2.

Description

[0122] Further advantages, features and details of the invention emerge from the following description of preferred examples of embodiment and with the aid of the drawings. In the figures:

[0123] FIG. 1 shows an illustrative embodiment of a device according to the invention,

[0124] FIG. 2a shows a simplified, cross-sectional representation of the right-hand side of the device in a first process step of an illustrative method according to the invention,

[0125] FIG. 2b shows a simplified, cross-sectional representation of the right-hand side of the device in a second process step,

[0126] FIG. 2c shows a simplified, cross-sectional representation of the right-hand side of the device in a third process step and

[0127] FIG. 2d shows a simplified, cross-sectional representation of the right-hand side of the device in a fourth process step.

[0128] Identical components and components with the same function are denoted by the same reference numbers in the figures.

[0129] The figures are not true to scale. In particular, a, transfer layer 12 is represented much thicker than it should be in relation to a growth substrate 13 or to a carrier substrate 10. The representation not true to scale is used merely for the purpose of clarity.

[0130] FIG. 1 shows a device 1 according to the invention, comprising a chamber 2, in which a substrate holder 3 is located. Substrate holder 3 is electrically conductive and has at least one electrically conductive connection to growth substrate 13. Chamber 2 comprises at least one valve 6, via which a gas or a gas mixture 16 can be introduced.

[0131] Preferably, there is also a second valve 6, via which gas or gas mixture 16 can be discharged. Chamber 2 comprises an electrode 4. It is also conceivable for a wall of chamber 2 to serve as electrode 4. For the sake of clarity, electrode 4 is represented as a separate component.

[0132] Device 1 comprises a radiation source 18, with the aid of which the components of gas or gas mixture 16 can be ionised to form ions 17. Radiation source 18 can be located inside or outside chamber 2. If radiation source 18 is located outside chamber 2, a window 8 enables passage of radiation 7 into chamber 2.

[0133] Transfer layer 12 is generated on growth substrate 13, in particular by a CVD or PVD process. Growth substrate 13 is fixed on substrate holder 3. Growth substrate 3 is preferably shielded from the surroundings by insulation 5.

[0134] Transfer layer 12 is contacted from the other side by carrier substrate 9. In the present case, carrier substrate 9 is a film 10, which is stretched in a frame 11. Carrier substrate 9 can however be designed arbitrarily, as long as it permits the passage of ions 17 to transfer layer 12 or as long as ions 17 collect in carrier substrate 9 (in the present case, in film 10). Ions 17 are now represented by their charge, since the use of the symbol would complicate the drawing and make it more complex.

[0135] Ions 17 are accelerated by applied electric field 15 in the direction of transfer layer 12 and first strike carrier substrate 9. Electric field 15 penetrates the entire, in particular dielectric, carrier substrate 9 completely up to growth substrate 13. Ions 17 are thus also still accelerated in carrier substrate 9, but have to pave their way towards transfer layer 12 by diffusion processes.

[0136] Ions 17 collect in the carrier substrate in the vicinity of transfer layer 12. Since electric field 15 ends at the surface of growth substrate 13 (more precisely, at the surface of transfer layer 12, insofar as the latter is electric), no further driving force is present to convey ions 17 deeper into growth substrate 13.

[0137] Nonetheless, some ions 17 could succeed in penetrating up to growth substrate 13, in particular due to tunnel effects. Ions 17 could be reduced again there and combine in particular to form hydrogen gas. The hydrogen gas can expand and thus promote the separation of transfer layer 12 from the side of growth layer 13. In this case, device 1, but in particular substrate holder 3, has a heating device 18 in order to bring the substrates up to temperature.

[0138] FIG. 2a shows a representation of the right-hand side of the device in a first process step of an illustrative method according to the invention, wherein carrier substrate 9 contacts transfer layer 12, which is located on growth substrate 13.

[0139] FIG. 2b shows a second process step wherein an electric field 15 is applied, the effect of which is that transfer layer 12 becomes negatively charged. Negative charge carriers 20 migrate into the surface of transfer layer 12, insofar as transfer layer 12 is a conductor. If transfer layer 12 is a dielectric, negative charge carriers 20 are to be understood as being the negative charge carriers of a displacement or orientation polarisation. Actual negative charge carriers 20 would then be located either at the surface of growth layer 13, or, if the latter is also a dielectric, at the surface of the substrate holder (not shown). The corresponding positive charge carriers are not shown in this case. What is relevant is that the surface of transfer layer 12 is negatively charged.

[0140] FIG. 2c shows a third process step, wherein the ions 17, in particular hydrogen ions, remain in carrier substrate 9 and have approached transfer layer 12. On account of the different sign between positively charged ions 17 and negatively charged transfer layer 12, an attraction prevails between the two.

[0141] FIG. 2d shows a fourth process step, wherein transfer layer 12, which adheres to carrier substrate 9 (in the special case to film 10), is removed from growth substrate 13 by a peeling process from the edge.

TABLE-US-00001 List of reference numbers 1 device 2 chamber 3 substrate holder/electrode 4 electrode 5 insulation 6 valve 7 radiation 8 window 9 carrier substrate 10 film 11 frame 12 transfer layer 13 growth substrate 14 voltage source 15 electrical field lines 16 gas 17 ion 18 radiation source 19 heating device 20 negative electrode charge F force