PEROVSKITE LAYER

Abstract

The invention is in the field of semiconductors. The invention is directed to a composition, a method for producing a layer, a layer, a photoconducting device and a photovoltaic device. The composition of the invention comprises a matrix comprising a polymer, and dispersed in said matrix one or more perovskite materials.

Claims

1. A composition comprising a matrix comprising a polymer, and one or more perovskite materials dispersed in said matrix; wherein the one or more perovskite materials comprise one or more metal halide perovskite materials, and/or the composition comprises the one or more perovskite materials in an amount of more than 50 percent by weight of the total composition.

2. The composition of claim 1, wherein the matrix comprising a polymer is in an amount of 0.5-8% by weight of the total composition.

3. The composition of claim 1, wherein the one or more perovskite materials are present as solid particles.

4. The composition of claim 3, wherein the solid particles have an average particle size of 0.01-75 μm.

5. The composition of claim 1, wherein the polymer comprises one or more selected from the group consisting of insulating polymers, semiconducting polymers, and conducting polymers.

6. The composition of claim 1, wherein the polymer comprises one or more selected from the group consisting of styrenic block copolymers and polyamines.

7. The composition of claim 1, wherein the polymer is a linear triblock copolymer based on styrene and ethylene/butylene.

8. The composition of claim 1, wherein the polymer comprises one or more selected from the group consisting of sodium o-sulphobenzaldehyde acetal of poly(vinyl alcohol); chloro-sulphonated poly(ethylene); a mixture of macromolecular bisphenol poly(carbonates) and copolymers comprising bisphenol carbonates and poly(alkylene oxides); aqueous ethanol soluble nylons; poly(alkyl acrylates and methacrylates); copolymers of poly(alkyl acrylates and methacrylates with acrylic and methacrylic acid); poly(vinyl butyral); poly(urethane) elastomers; cellulose acetate butyrate, polyalkyl (meth)acrylates, polyvinyl-n-butyral, poly(vinylacetate-co-vinylchloride), poly(acrylonitrile-co-butadiene-co-styrene), poly(vinyl chloride-co-vinyl acetate-co-vinylalcohol), poly(butyl acrylate), poly(ethyl acrylate), poly(methacrylic acid), poly(vinyl butyral), trimellitic acid, butenedioic anhydride, phtalic anhydride, polyisoprene, styrene-hydrogenated diene block copolymers having a saturated rubber block from polybutadiene or polyisoprene, polyfluorenes, polyphenylenes, polypyrenes, polyazulenes, polynaphthalenes, polypyrroles, polycarbazoles, polyindoles, polyazepines, polyanilines, polythiophenes, poly(alkylthiophene)s, poly(3,4-ethylenedioxythiophene), poly(p-phenylene sulphide), poly(p-phenylene vinylene), polycarbazoles, diketopyrrolopyrrole-based polymers, poly(naphthalene diimide) polymers, and poly(triarylamine)s.

9. The composition of claim 1, wherein the one or more perovskite materials are selected from organo-metallic metal halide perovskite materials.

10. The composition of claim 1, wherein the one or more perovskite materials are selected from inorganic metal halide perovskite materials.

11. A method for producing a layer comprising the composition of claim 1, comprising the steps of: dispersing one or more perovskite materials in a fluid, thereby creating a dispersion, and coating a substrate with the dispersion; wherein the fluid comprises: the polymer, an optional curable compound, and an optional solvent in which the one or more perovskite materials are not soluble.

12. The method of claim 11, further comprising a step of curing the dispersion.

13. The method of claim 11, wherein the coating step comprises one or more selected from the group consisting of blade coating, screen printing, stencil printing, and additive manufacturing.

14. The method of claim 11, further comprising a step of compacting the layer using heat.

15. The method of claim 11, further comprising a step of compacting the layer using mechanical force.

16. A layer obtainable by the method of claim 11.

17. A layer comprising the composition of claim 1.

18. The layer of claim 17, having a thickness of 100 μm or more.

19. A photoconducting device comprising the composition of claim 1.

20. A photovoltaic device comprising the composition of claim 1.

21. A photoconducting device or a photovoltaic device comprising a layer comprising the composition of claim 1, the photoconducting device or the photovoltaic device comprising two or more different perovskite materials; wherein said two or more different perovskite materials are each present in a separate layer, and wherein said separate layers are stacked on top of each other.

22. A photoconducting device or a photovoltaic device comprising a layer comprising the composition of claim 1, the photoconducting device or the photovoltaic device comprising two or more different perovskite materials; wherein said two or more different perovskite materials are each present in a separate section of an in-plane layer.

23. A photoconducting device or a photovoltaic device comprising a layer comprising the composition of claim 1, the photoconducting device or the photovoltaic device comprising two or more different perovskite materials; wherein said two or more different perovskite materials are present and intermixed in the same layer.

Description

EXAMPLES

Example 1—Preparation of a Layer of Perovskite Dispersed in a Matrix

[0064] 0.5 g Kraton™ FG1901 (Kraton Polymers Research RV) and 7.5 ml toluene (Sigma Aldrich, 99.8%) were mixed in a planetary centrifugal mixer (Thinky Mixer USA) at 3000 rpm for 15 minutes. To 0.7 g of the resulting clear, transparent and viscous solution, 2.46 g perovskite powder was added and mixed at 3000 rpm for 15 minutes in a planetary centrifugal mixer (Thinky Mixer USA). The dispersion was deposited on a glass substrate with pre-patterned indium tin oxide (ITO) bottom electrode using doctor blade coating through a 0.5 mm thick metal stencil. Subsequently the wet layer was annealed on a hot plate at 80° C. for 20 minutes to obtain a dry layer of ca. 300 μm thickness. Finally, a patterned ITO top electrode was sputtered on the perovskite layer.

[0065] FIG. 3 is a photograph of a layer of CsPbBr.sub.3 dispersed in a matrix comprising Kraton™ FG1901, applied onto a substrate, produced according example 1.

[0066] FIG. 4 is a photograph of a layer of methylammonium lead iodide (CH.sub.3NH.sub.3PbI.sub.3) dispersed in a matrix comprising Kraton™ FG1901, applied onto a substrate, produced according example 1.

Example 2—Preparation of a Layer of Perovskite Dispersed in a Matrix

[0067] 0.5 g Kraton™ FG1901 (Kraton Polymers Research RV) and 7.5 ml xylene (Sigma Aldrich, 99.8%) were mixed in a planetary centrifugal mixer (Thinky Mixer USA) at 3000 rpm for 15 minutes. To 0.7 g of the resulting clear, transparent and viscous solution, 2.46 g perovskite powder was added and mixed at 3000 rpm for 15 minutes in a planetary centrifugal mixer (Thinky Mixer USA). On a glass substrate with pre-patterned indium tin oxide (ITO) bottom electrode, a tin oxide electron transport layer was deposited by means of spincoating a colloidal dispersion and subsequent annealing at 140° C. The perovskite dispersion was deposited on said substrate using doctor blade coating through a 0.5 mm thick metal stencil. Subsequently the wet layer was annealed in a vacuum oven at 110° C. for 30 minutes to obtain a dry layer of ca. 300 μm thickness. A molybdenum oxide hole transport layer was deposited using vapour deposition, followed by a patterned ITO top electrode.

Example 2—Comparison with Other Metal Halide Perovskite Layers

[0068] The current densities of the layers obtained in example 1 were compared to other alternatives to a perovskite single crystal.

[0069] FIG. 6 shows the JV sweep of a 300 μm thick layer of CsPbBr.sub.3 dispersed in a matrix comprising Kraton™ FG1901 sandwiched between two indium tin oxide electrodes, measured in dark and light conditions. Device area was 1 mm.sup.2. A dark current density of 10.sup.−5 mA cm.sup.−2 at +/−20 V can be derived.

[0070] FIG. 7 shows the JV sweep of a 300 μm thick layer of CH.sub.3NH.sub.3PbI.sub.3 dispersed in a matrix comprising Kraton™ FG1901 sandwiched between two indium tin oxide electrodes, measured in dark and light conditions. Device area was 1 mm.sup.2. A dark current density of 3×10.sup.−5 mA cm.sup.−2 at a bias of +/−20V (electrical field+/−0.07 V/μm) can be derived.

[0071] In comparison, Kim et al., (Nature 2017, 550, 87-91) have reported a dark current density of a printed CH.sub.3NH.sub.3PbI.sub.3 layer sandwiched between two ITO electrodes of 3×10.sup.−2 mA cm.sup.−2 at a bias of 55 V (electrical field of 0.07 V/μm). Using an optimised device stack Kim et al. reduced the dark current density to 1×10.sup.−4 mA cm.sup.−2 at the same bias. Shresta et al. (Nature Photonics 2017, 11, 436-440) have reported a dark current density of a sintered CH.sub.3NH.sub.3PbI.sub.3 device of 6×10.sup.−3 mA cm.sup.−2 at an electrical field of 0.2 V/μm, and using an optimised device stack in which the electric contacts of the 1-mm-thick CH.sub.3NH.sub.3PbI.sub.3 wafer are formed by poly(3,4-ethylenedioxythiophene) polystyrene sulphonate (PEDOT:PSS) and phenyl-C61-butyric acid methyl ester (PCBM) and ZnO as hole-selective and electron-selective contact and buffer layers, respectively. A bottom ITO/glass substrate and a silver top electrode finish the device stack.