HIGH CURRENT BI-POLAR PULSE SYSTEM FOR USE IN ELECTROCHEMICAL METAL SURFACE FINISHING
20190337068 ยท 2019-11-07
Inventors
Cpc classification
H10N60/0156
ELECTRICITY
B23H3/02
PERFORMING OPERATIONS; TRANSPORTING
B23H3/04
PERFORMING OPERATIONS; TRANSPORTING
International classification
B23H3/02
PERFORMING OPERATIONS; TRANSPORTING
B23H3/04
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A high current bi-polar pulse system for use in electrochemical metal surface finishing of metallic components. The high current bi-polar pulse system provides a high isolation, high current switching device for providing independently controllable, alternating polarity, variable time duration pulses for electrochemical and mechanical finishing of metallic components in a conducting fluid bath. The high current bi-polar pulse system provides a safe, low-cost solution for implementing the surface finishing of niobium (Nb) SRF accelerating cavities without the use of hydrofluoric acid.
Claims
1. An apparatus for electropolishing a superconductive radio frequency cavity comprising: a cathodic voltage source comprising a first variable direct current power supply and a first capacitor bank in electrical communication with said first variable power supply; an anodic voltage source comprising a second variable direct current power supply and a second capacitor bank in electrical communication with said second variable power supply; a counter-electrode at least partially disposed in an electrolytic fluid which is in contact with a niobium cavity to be polished; a first conductive path between said cathodic voltage source and said counter electrode; a second conductive path between said anodic voltage source and said counter electrode; a cathodic voltage switch positioned within the conductive path between said cathodic voltage source and said counter-electrode; an anodic voltage switch positioned within the conductive path between said anodic voltage source and said counter-electrode; and, a timing control circuit disposed to control the operation of said voltage switches.
2. The apparatus for electropolishing a superconductive radio frequency cavity of claim 1 wherein each of said first and second variable direct current power supplies is independently adjustable.
3. The apparatus for electropolishing a superconductive radio frequency cavity of claim 2 wherein each of said first and second variable direct current supplies is a high current power source and supplies between four and twenty volts.
4. The apparatus for electropolishing a superconductive radio frequency cavity of claim 3 wherein each of said first and second variable direct current supplies provides twenty volts.
5. The apparatus for electropolishing a superconductive radio frequency cavity of claim 1 wherein said apparatus does not include a rectifier.
6. The apparatus for electropolishing a superconductive radio frequency cavity of claim 1 wherein each of said first and second capacitor banks provides ten farads or greater electrical capacitance.
7. The apparatus for electropolishing a superconductive radio frequency cavity of claim 1 wherein each of said switching device is a fast switching, low impedance semi-conductor device.
8. The apparatus for electropolishing a superconductive radio frequency cavity of claim 7 wherein each of said switching devices is an insulated-gate bi-polar transistor.
9. An apparatus for electropolishing a superconductive radio frequency cavity comprising: at least two direct current power supplies; at least two capacitor banks; each capacitor bank connected to a separate direct current power supply; a counter electrode connected to said capacitors via a conduction pathway; said counter electrode being in communication with an electrolytic fluid and said fluid being in contact with a surface of niobium cavity; at least two switching devices positioned to regulate the conduction pathway between said capacitors and said counter electrode; and, a timing control circuit disposed to operate said at least two switching devices.
10. A method of chemically processing a metallic work piece comprising the steps of: providing a source of cathodic voltage comprising a first direct current power supply and at least one first capacitor providing at least ten farads electrical capacitance and a source of anodic voltage comprising a second direct current power supply and at least one second capacitor providing at least ten farads electrical capacitance; connecting said sources of cathodic voltage and anodic voltage via a respective conduction path to an electrochemical cell comprising a metallic work piece, a counter electrode, and an electrically conducting fluid; and, using a timing control circuit to alternate discharge of said at least one first capacitor and said at least one second capacitor according to a predetermined programmed sequence.
11. The method of claim 10 wherein each said conduction path incorporates an electronic switch.
12. The method of claim 11 wherein each said electronic switch further comprises an insulated-gate bipolar transistor.
13. The method of claim 12 wherein said insulated-gate bipolar transistors provide an at least five hundred amperes conduction path from said sources of cathodic voltage and anodic voltage through the electrochemical cell.
14. The method of claim 10 further comprising independently adjusting the output of each of said first and second power supplies in order to assist in generating the desired cathodic voltage and anodic voltage in the system.
Description
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S)
[0013] Reference is made herein to the accompanying drawings, which are not necessarily drawn to scale, and wherein:
[0014]
DETAILED DESCRIPTION
[0015] With reference to
[0016] With reference to
[0017] A switching device 34, preferably a fast switching, low impedance semi-conductor device 34, such as an insulated-gate bipolar transistor (IGBT), provides a high current, preferably greater than 500 amps (A), conduction path 36 from the capacitor banks 24 through the electrochemical cell 26. A timing control circuit 38 engages discharge of the capacitor banks 24 through the switching device 34 and electrochemical cell 26 according to a selected programmed sequence.
[0018] The net removal rate of oxides from the surface of the niobium structure is dependent upon the cathodic current density and the repetition frequency. Further, it is believed that the cathodic pulse duration affects the efficiency of the oxide removal at each pulse.
[0019] By way of example, one preferred embodiment of the system would generate a fifteen millisecond cathodic pulse, rest for five milliseconds, generate a ten millisecond anodic pulse, rest for five milliseconds, and then repeat the process until the desired effect has been achieved. The pulse duration may vary with the particular circumstances of use and the control scheme is sufficiently flexible to allow for such alteration and implementation.
[0020] The electrically conducting fluid 32 can be any suitably conductive fluid, even salt water. However, it will be recognized that fluids with high conductivity will increase the overall process rate, and, therefore, reduce the time necessary to polish a given surface area. A preferred embodiment of the invention would utilize sulfuric acid which possesses a sufficiently high level of conductivity to achieve the objects of the invention.
[0021] The high current bi-polar pulse system 20 is a high isolation, high current switching device that provides independently controllable, alternating polarity, variable time duration pulses for electrochemical and mechanical finishing of metallic components in an electrically conducting fluid bath. The system provides a safe, low-cost option for implementing surface finishing of metals in the metal industry and, more specifically, surface finishing of Nb SRF accelerating cavities without the use of hydrofluoric acid. The high current bi-polar pulse system 20 facilitates the economical and high quality surface finishing of Nb SRF accelerating cavities without the use of hydrofluoric acid. The invention has applicability to all types of particle accelerators employing bulk niobium SRF resonant structures, including cavity processing for the proposed International Linear Collider (ILC) for colliding electrons with positrons.
[0022] The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.