COATING FOR PERFORMANCE ENHANCEMENT OF SEMICONDUCTOR APPARATUS
20190338408 ยท 2019-11-07
Inventors
- Xiaoming HE (Shanghai, CN)
- Li Zhang (Shanghai, CN)
- Xingjian CHEN (Shanghai, CN)
- Tuqiang Ni (Shanghai, CN)
- Zhaoyang Xu (Shanghai, CN)
Cpc classification
C23C14/028
CHEMISTRY; METALLURGY
Y10T29/49888
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
C23C14/32
CHEMISTRY; METALLURGY
International classification
C23C14/32
CHEMISTRY; METALLURGY
Abstract
A plasma processing chamber having advanced coating for the showerhead and for an extended bottom electrode. The extended bottom electrode can be formed by one or more of the focus ring, cover ring, and plasma confinement ring. The extended electrode can be formed using a one-piece composite cover ring. The composite cover ring may be made of Al.sub.2O.sub.3 and include a Y.sub.2O.sub.3 plasma resistant coating. The plasma confinement ring may include a flow equalization ion shield that may also be provided with the plasma resistant coating. The plasma resistant coating of the extended electrode may have elements matching that of the showerhead.
Claims
1. A method for fabricating a showerhead for a plasma processing chamber, comprising: fabricating a showerhead assembly, the showerhead assembly comprising a perforated plate; placing a source material containing Yttrium in a vacuum chamber; placing the perforated plate in the vacuum chamber; evaporating or sputtering the source material to perform physical vapor deposition of the source material on the perforated plate; injecting into the vacuum chamber source gas; igniting plasma inside the vacuum chamber in front of the perforated plate; thereby forming a protective coating containing Yttrium on the perforated plate.
2. The method of claim 1, wherein fabricating the showerhead assembly comprises fabricating the perforated plate from SiC.
3. The method of claim 1, wherein fabricating the showerhead assembly comprises fabricating the perforated plate from Al alloy.
4. The method of claim 1, wherein fabricating the showerhead assembly comprises fabricating an integrated perforated plate and grounding ring.
5. The method of claim 1, further comprising anodizing the perforated plate prior to placing the perforated plate in the vacuum chamber.
6. The method of claim 1, wherein injecting source gas comprises injecting at least one of argon, oxygen, and fluorine.
7. The method of claim 1, further comprising coupling the perforated plate to a negative voltage when the perforated plate is in the vacuum chamber.
8. The method of claim 1, wherein fabricating a showerhead assembly further comprises: fabricating a back plate, a support ring and a conductive ring; assembling the perforated plate, the back plate, the support ring, and the conductive ring to form the showerhead assembly; and wherein placing the perforated plate in the vacuum chamber comprises placing the perforated plate assembled into the showerhead assembly, such that forming the protective coating packages the assembled showerhead assembly.
9. The method of claim 1, wherein the source gas comprises oxygen containing gas, thereby forming the protective coating of Yttria.
10. The method of claim 1, wherein the source gas comprises fluorine containing gas, thereby forming the protective coating of YF.sub.3.
11. The method of claim 1, wherein injecting source gas comprises injecting argon and a reactive gas selected from oxygen and fluorine.
12. The method of claim 1, further comprising forming an intermediate coating on the perforated plate prior to placing the perforated plate in the vacuum chamber, wherein the intermediate coating contains aluminum or yttrium.
13. The method of claim 12, wherein the intermediate coating comprises plasma sprayed Y.sub.2O.sub.3 coating.
14. The method of claim 1, further comprising: fabricating a focus ring, a cover ring, and a plasma confinement ring; placing at least one of the focus ring, the cover ring, and the plasma confinement ring in the vacuum chamber; evaporating or sputtering the source material to perform physical vapor deposition of the source material on the at least one of the focus ring, the cover ring, and the plasma confinement ring; injecting into the vacuum chamber source gas; igniting plasma inside the vacuum chamber in front of the at least one of the focus ring, the cover ring, and the plasma confinement ring; thereby forming a protective coating containing Yttrium on the at least one of the focus ring, the cover ring, and the plasma confinement ring.
15. The method of claim 14, wherein fabricating the focus ring and the cover ring comprises fabricating a single-piece composite cover ring.
16. The method of claim 15, wherein fabricating the composite cover ring comprises fabricating the composite cover ring from Al.sub.2O.sub.3.
17. The method of claim 16, further comprising coupling the composite cover ring to RF power supplier to form an extended electrode.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The accompanying drawings, which are incorporated in and constitute a part of this specification, exemplify the embodiments of the present invention and, together with the description, serve to explain and illustrate principles of the invention. The drawings are intended to illustrate major features of the exemplary embodiments in a diagrammatic manner. The drawings are not intended to depict every feature of actual embodiments nor relative dimensions of the depicted elements, and are not drawn to scale.
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DETAILED DESCRIPTION
[0042] Various embodiments will now be described, providing improved coatings for showerheads, which improve erosion and particle performance of the showerhead, together with coated cathode assembly for enhancing etch rate and plasma uniformity.
[0043] For example, in one embodiment the upper electrode is fabricated as a combined showerhead and grounding ring, while the bottom electrode is the combination of the chuck electrodecoupling the power via the silicon wafer, plus an extended electrode that is formed by the coated focus ring, the coated cover ring, and the coated FEIS ring. In this embodiment, the upper electrode is fabricated from SiC or Al alloy, and is coated with Y.sub.2O.sub.3. The coating has fine/compact grain structure and random crystal orientation, as will be described in more details below. The extended electrode may be made of conductive material and also has the Y.sub.2O.sub.3 coating.
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[0045] Also shown in
[0046]
TABLE-US-00001 TABLE 1 60 MHz 2 MHz Pressure Power Power CF.sub.4 C.sub.4F.sub.8 Ar N.sub.2 O.sub.2 Recipe mT W W sccm No 1 90-110 1300-1700 1600-2000 450-500 200-250 75-100 No 2 70-90 1300-1700 2300-2700 50-70 40-60 500-700 100-200 50-75
[0047] In the embodiment of
[0048] According to another embodiment, illustrated in
[0049] According to one specific another embodiment, the composite cover ring 749 is made by the deposition of Y.sub.2O.sub.3 coatings onto Al.sub.2O.sub.3 substrate. Comparing the properties of other materials list in Table 2, Al.sub.2O.sub.3 has coefficient of thermal expansion (CTE) that is almost the same as that of Y.sub.2O.sub.3. This property ensures that thick Y.sub.2O.sub.3 coating can be synthesized on the Al.sub.2O.sub.3 surface, with a stable structure and the good adhesion. The combination can also withstand operating in high service temperatures. Additionally, the Al.sub.2O.sub.3 based composite cover ring (CCR) will have enhanced service function in various plasma environments, as Al.sub.2O.sub.3 substrate has good thermal conductivity, comparing to solid Y.sub.2O.sub.3 CCR.
TABLE-US-00002 TABLE 2 Materials PS Y.sub.2O.sub.3 Si SiC Al.sub.2O.sub.3 Al CTE, 106 .Math. K1 5.9 2.6-3.2 2.9-3.2 5.4 20 Thermal conductivity, 3.8 149 150 30 125 W .Math. m1 .Math. K1
[0050] As can be understood from the embodiments disclosed above, when providing Y.sub.2O.sub.3 coated FR, Y.sub.2O.sub.3 coated CR, and/or Y.sub.2O.sub.3 coated FEIS ring, which aren't grounded, i.e., being floating or RF biased, they function as an extended bottom electrode. When the plasma is ignited and maintained between bottom electrode, i.e., the combined electrostatic chuck and wafer, and upper electrode Y.sub.2O.sub.3 coated SH, the plasma is also simultaneously ignited and maintained between the upper electrode Y.sub.2O.sub.3 coated SH and the extended bottom electrode, i.e., the Y.sub.2O.sub.3 coated FR, the Y.sub.2O.sub.3 coated CR, and the Y.sub.2O.sub.3 coated FEIS ring. Since the upper electrode and the extended bottom electrode have the Y.sub.2O.sub.3 surfaces, it helps to stable the RF coupling and maintain uniform plasma distribution between the CCP electrodes and thus promote the uniform plasma etch on the wafer's surface. It is noted that in the embodiment of
[0051] The description now turns to the apparatus and method for forming the coating, which may be used to coat the showerhead and the extended bottom electrode described above.
[0052] Unlike conventional plasma spray, in which the coating is deposited in atmospheric environment, the advanced coating disclosed herein is deposited in low pressure or vacuum environment. Also, while in plasma spray the coating is deposited using small powdery particles, the advanced coating is deposited by the condensation of atoms, radicals, or molecules on the materials surfaces. Consequently, the characteristics of the resulting coating layer is different from the prior art coating, even when the same material composition is used. For example, it was found that a Y.sub.2O.sub.3 coating deposited according to embodiment of the invention has practically no porosity, specified surface roughness above 1 um, and has a much higher etch resistance than the conventional PS Y.sub.2O.sub.3 coating.
[0053] The embodiments of the invention will now be described in detail with reference to the Figures. First, the equipment and method for depositing the advanced coating will be described.
[0054] In
[0055] A source material 820 containing species to be deposited is provided, generally in a solid form. For example, if the film to be deposited is Y.sub.2O.sub.3 or YF.sub.3 based, source material 820 would include yttrium (or fluorine)possibly with other materials, such as oxygen, fluorine (or yttrium) etc. To form the physical deposition, the source material is evaporated or sputtered. In the example of
[0056] The plasma enhanced part is composed of a gas injector 835, which injects into chamber 800 reactive and non-reactive source gases, such as argon, oxygen, fluorine containing gas, etc., as illustrated by the dotted lines. Plasma 840 is sustained in front of part 810, using plasma sources, e.g., RF, microwave, etc., one of which in this example is shown by coil 845 coupled to RF source 850. Without being bound by theory, it is believed that several processes take place in the PE part. First, non-reactive ionized gas species, such as argon, impinging the part 810, so as to condense the film as it is being built up. The effects of ion impinging may result from the negative bias on part 810 and part holder 805, or from the ions emitted out from the plasma sources and aimed at part 805. Second, reactive gas species or radicals, such as oxygen or fluorine, react with the evaporated or sputtered source material, either inside the chamber or on the surface of the part 810. For example, the source Yttrium reacts with the oxygen gas to result in Y containing coating, such as Y.sub.2O.sub.3 or YF.sub.3. Thus, the resulting process has both a physical (impingement and condensation) component and a chemical component (e.g. oxidation and ionization).
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[0059] While according to above embodiment the surface of the coated perforated gas plate is characterized with the specified surface roughness (surface roughness is controlled equal to or larger than Ra 1.0 um), according to one embodiment the surface is roughened in order to promote polymer adhesion during plasma processing. That is, according to one aspect, the surface roughness of the A-coating is controlled, since if the surface is too smooth, polymer deposition during etching will not adhere well to the surface, and thus induce particles. On the other hand, too rough surface will directly create particles due to the plasma etching. Therefore, according to this embodiment the recommended surface roughness Ra is equal to or above 1 um. Perfectly, the recommended surface roughness Ra is above 1 um, but below 10 um (1 um<Ra<10 um). It has been found that in this range the particle generation is minimized, while polymer adhesion is controlled. That is, the noted range is critical because using higher roughness leads to particle generation, while using smoother coating diminishes adhesion of the polymers during plasma processing. In all cases, the A-coating with either single or multilayered structure has the dense structure with random crystal orientation and porosity less than 1% and has no any crack or delamination.
[0060] According to one embodiment this roughness is achieved by the as-deposited coating, or by lapping, polishing or other post PEPVD surface treatment on the as-deposited coatings. On the other hand, according to one embodiment the surface of the perforated gas plate is first roughened to the desired roughness (Ra>4 um), and then the coating is deposited. Since the coating is done using PEPVD, the resulting coating may have the same or different roughness as the surface prior to the coating, according to the thickness of the coating and the deposition process.
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[0064] According to one example, the perforated gas plate is the anodized plate where the surface and inside gas holes are all protected by the anodization, such as the hard anodization. Then, the deposition of A-coatings, such as A-Y.sub.2O.sub.3 is performed either on the surfaces of perforate gas plate (expect the back side surface contact to the conductive plate 905 and back plate 910) as showing in
[0065] According to various embodiments, the intermediate layer or coating could be of metals, alloys, or ceramics (such as Y.sub.2O.sub.3, YF.sub.3, ErO.sub.2, SiC, Si.sub.3N.sub.4, ZrO.sub.2, Al.sub.2O.sub.3, AlN and their combinations or combination of them with other elements). The second or the top coating with the surface facing to plasma is the A-coating of Y.sub.2O.sub.3, YF.sub.3, ErO.sub.2, SiC, Al.sub.2O.sub.3 and their combinations or combination of them with other materials.
[0066] As quite different from the prior art, according to some embodiments the A-coating is proposed to be deposited on the substrate materials that could have at least one element or component which is also contained in the A-coating, such as the deposition of A-Y.sub.2O.sub.3 on anodized surface, Al.sub.2O.sub.3 or Y.sub.2O.sub.3 surface. Since the same elements or components occurred in both the coating and the substrate will result in the formation of the atomic bonding from the same elements or components in the interfacial region between the A-coating and the substrates, which promotes the formation of A-coating with the increased thickness and the improve adhesion to the substrates or showerhead.
[0067] It should be understood that processes and techniques described herein are not inherently related to any particular apparatus and may be implemented by any suitable combination of components. Further, various types of general purpose devices may be used in accordance with the teachings described herein. The present invention has been described in relation to particular examples, which are intended in all respects to be illustrative rather than restrictive. Those skilled in the art will appreciate that many different combinations will be suitable for practicing the present invention.
[0068] Moreover, other implementations of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. Various aspects and/or components of the described embodiments may be used singly or in any combination. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.