SPUTTERING APPARATUS FOR COATING OF 3D-OBJECTS
20240136156 ยท 2024-04-25
Inventors
Cpc classification
C23C14/54
CHEMISTRY; METALLURGY
C23C14/3407
CHEMISTRY; METALLURGY
H01J37/32403
ELECTRICITY
H01J37/32568
ELECTRICITY
C23C14/35
CHEMISTRY; METALLURGY
International classification
C23C14/35
CHEMISTRY; METALLURGY
Abstract
An apparatus to coat at least one three-dimensional (3D) object. The apparatus includes: a coating chamber; a vacuum pump system; a chamber port; and a rotatable object holder. The holder has a rotational axis Z. At least two rotary cathodes are positioned in the chamber. Each cathode includes a hollow cylindrical rotary target having a rotary axis Y. A magnetic system is swivel or rotary mounted round axis Y and positioned neighboring to an inner diameter surface of the target. At least one power supply is provided for the target. The targets of the at least two rotary cathodes are positioned round the holder, with their axes Y1, Y2 transverse to axis Z, both being offset to the holder in a z-direction, and being offset to each other in a direction along axis Z on opposite sides of an object plane O which is vertical to axis Z.
Claims
1. An apparatus to coat at least one three-dimensional(3D-) object (8,8) by physical vapor deposition, the apparatus comprising: a coating chamber (2,2); a vacuum pump (13) system (13) connected to the chamber by a vacuum port (28); a chamber port (12); a rotatable object holder (9), the holder having a rotational axis Z; at least two rotary cathodes positioned in the chamber, the cathodes each comprising a hollow cylindrical rotary target (3,4) having a rotary axis Y; a magnetic system (6, 6) which is swivel or rotary mounted round axis Y and positioned neighboring to an inner diameter surface of the target; at least one power supply (7,7) for the target; whereat the targets (3,4) of the at least two rotary cathodes are positioned round the holder (9,9,9), with their axes Y.sub.1, Y.sub.2 transverse to axis Z, both being offset to the holder in a z-direction, and being offset to each other in a direction along axis Z on opposite sides of an object plane O which is vertical to axis Z, and the holder is movable along axis Z to position the object plane O in or near the center of a circumferential edge, protrusion, or recess of the 3D-object to be coated.
2. The apparatus according to claim 1, wherein axes Y.sub.1, Y.sub.2 of the targets are in a right angle to axis Z.
3. The apparatus according to claim 1, wherein axes Y.sub.1, Y.sub.2 of the targets are both horizontal.
4. The apparatus according to claim 1, wherein the holder is mounted on the closure of the chamber port.
5. The apparatus according to claim 1, wherein the chamber port is mounted in a bottom area of the chamber.
6. The apparatus according to claim 1, comprising at least one further rotary cathode, positioned above or below the at least two rotary cathodes.
7. The apparatus according to claim 1, comprising at least one planar magnetron, positioned above or below the at least two rotary cathodes.
8. The apparatus according to claim 1, wherein targets (3, 4) are positioned on the same side of the holder.
9. The apparatus according to claim 1, wherein targets (3, 4) are positioned on opposite sides of the holder.
10. The apparatus according to claim 1, comprising 2n targets (3, 4) whereat n is an integer.
11. The apparatus according to claim 1, wherein the at last one target (3) on one side of plane O and the at last one target (4) on the other side of plane O each have a separate power supply.
12. The apparatus according to claim 1, wherein at last one target (3) on one side of plane O and at last one target (4) positioned next on the other side of plane O is connected to a bipolar power supply in dual magnetron configuration.
13. The apparatus according to claim 1, comprising a control system (14) with a power modulator adapted to set and control the power of the at least one power supply and a magnet controller adapted to set and control movement and position of the magnetic system.
14. The apparatus according to claim 1, wherein an object axis of the at least one 3D-object corresponds to the holder axis Z.
15. A process to deposit a coating on a surface (S.sub.c,S.sub.h,S.sub.v) of at least one 3D-object using an apparatus according to claim 14 and comprising the following steps: mounting the at least one 3D-object on the holder; Transferring the holder with the 3D-object into the coating chamber; applying vacuum to the chamber by opening the vacuum port; setting a gas flow of inert gas and setting optionally a gas flow of a reactive gas; optionally applying a substrate bias to the 3D-object; connecting the targets to a power supply to sputter material from the targets towards the surface.
16. The process according to claim 15, wherein the target power P of at least one of the targets (3, 4) is synchronized by the power modulator with at least one of the following process features: a rotation angle ? of the holder round axis Z, a position angle ? of the magnetic system, a swivel frequency f of the magnetic system, an angular velocity ? of the magnetic system.
17. The process according to claim 15, wherein the magnetic systems of the targets (3,4) are swivel mounted, and the magnet controller controls the position angle ? or/and a swivel frequency f of each of the magnetic systems (6, 6) in dependency of a number m of holder turns round axis Z, where m is an integer.
18. The process according to claim 15, wherein the magnetic systems of the targets (3,4) are swivel mounted, and the magnet controller controls the position angle ? or/and a swivel frequency f of each of the magnetic systems (6, 6) in dependency of a rotation angle ? of the holder round axis Z.
19. The process according to claim 15, wherein the position angle ? of the magnetic system is set in a range from ?0? towards plane O to ?90? towards axis Z.
20. The process according to claim 15, wherein the magnetic systems are rotary mounted, and the magnet controller controls an angular velocity ? of the magnetic system in dependency of a number m of turns of the holder, where m is an integer, or in dependency of a rotation angle ? of the holder round axis Z.
21. The process according to claim 15, wherein an object to be coated has a long Z-Axis and is of a cylindric, or prismatic, or cuboid shape.
22. The process according to claim 15, wherein the object to be coated is a flat body having two horizontal axes A, B of essentially different length in a relation of 10/12 to 10/40, and a thickness in a relation of 1 to 150 to one of horizontal axes A,B.
23. A process to deposit a coating on a surface (S.sub.c,S.sub.h,S.sub.v) of at least one 3D-object comprising the following steps: Providing an apparatus comprising: a coating chamber (2,2); a vacuum pump (13) system (13) connected to the chamber by a vacuum port (28); a chamber port (12); a rotatable object holder (9), the holder having a rotational axis Z; at least one rotary cathode positioned in the chamber, the cathode comprising a hollow cylindrical rotary target (3,4) having a rotary axis Y; a magnetic system (6, 6) which is swivel or rotary mounted round axis Y and positioned neighboring to an inner diameter surface of the target; at least one power supply (7,7) for the target; the target of the rotary cathode being positioned with axis Y.sub.1, Y.sub.2 in a target plane T, T, the target plane being perpendicular to axis Z, and the rotary cathode(s) being positioned in a distance D from rotary axis Z; mounting the at least one 3D-object on the rotatable holder; Transferring the holder with the 3D-object into the coating chamber; and position at least one object plane O, O, O comprising an essentially circumferential edge, protrusion or recess in a distance to a target plane T, T to allow sputtering in an angle ?.sub.E to the edge, protrusion or recess; applying vacuum to the chamber by opening the vacuum port; setting a gas flow of an inert gas and setting optionally a gas flow of a reactive gas; optionally applying a substrate bias to the 3D-object; rotate the 3D-object; connecting the targets to a power supply to sputter material from the targets towards the surface swivel or rotate the magnetic system to sweep or position a center of a sputter cone in an angle ?.sub.x from 0? to 90? or smaller.
Description
FIGURES
[0077] The invention shall now be further exemplified with the help of figures. It should be mentioned that figures are not reproduced to scale and give a schematically view only of important aspects of the invention. Same reference numbers or signs refer to the same matter. Inverted commas and subscript numbers or signs refer to subspecies or subfeatures of the respective feature without such superscript or subscript indications. The figures show:
[0078]
[0079]
[0080]
[0081]
[0082]
[0083]
[0084]
[0085]
[0086]
[0087]
[0088]
[0089]
[0090]
[0091]
[0092] With reference to
[0093] In
[0094] The targets 3,4 of two rotary cathodes are placed on two opposite sides of the object holder 9 in respective distance to the surfaces of object 8 to be coated. Targets 3,4 are supplied by separate target supplies 7, which can be DC, pulsed DC, RF, high plasma ionization magnetron sputtering (HIPIMS), or mixed supplies, e.g. when DC and RF frequencies, or two RF frequencies of different frequency are superimposed. When RF, HIPIMS, or mixed supplies are used, synchronizing means will be applied to avoid harmful frequency interferences. Supply lines 7 deliver the power from the target supplies to an inner surface of the targets via dynamic pick ups. A substrate bias supply 19 can be optionally foreseen to bias the object with DC, DC-pulse or RF-frequencies which may be synchronized with the respective frequencies of the target supplies.
[0095] With the embodiment as shown, the holder is mounted on a closure 12 of the chamber port 12 in the bottom of the chamber 2. On the outer side of the chamber port an object drive 11 is mounted to rotate the object holder 9 with the object(s) during the deposition process and optionally for positioning. The vertical object axis Zo is aligned with rotation axis Z of the holder.
[0096] Within the hollow target tubes 3, 4, which are rotated during sputtering, a magnetic system 6 comprising at least two rows of permanent magnets of opposite polarity (black and white) is swivel mounted, so that during sputtering the so called racetrack which is formed between the two rows of magnets on the outer surface of the target can be varied from an angle ?.sub.x=0? in direction of horizontal plane O to an angle ?.sub.x=90? in direction of the rotation axis Z. Smaller angles from 20? to 70? may be applied for different object geometries up to the respective needs. Further details of the rotary cathodes like cooling cylinders for the inner surface of the target, details of the swivel system and drive, target drive, dark room shields and the like should be in place, but are not shown as being known state of the art and not relevant for the present invention. The same refers to gas inlets for inert sputter gas and/or reactive gas, process monitoring devices or means to enhance ionization of the sputtered particles, which may help to enhance respective thickness distribution too, however, are not a subject of the present invention. Targets 3 and 4 are arranged offset in relation to each other with reference to a Z-direction, defined by rotation axis Z of the holder 9 whereby objects 8 can be positioned by holder 9 with reference to plane O, which defines a middle, here horizontal plane between lower and upper target axes Y.sub.1, Y.sub.2 respectively between target position U and U. Where U is the uppermost outer diameter position of the lower target 3 and U is the lowest outer diameter position of the upper target 4. The holder 9 can be rotated for deposition by holder drive 10 and be moved along axis Z by holder lifter 20 which acts on telescopic post 10 to move the holder respectively.
[0097] Furthermore, devices to promote ionization of the sputtered atoms, or heating and/or cooling devices, or etching devices (not shown) can be foreseen within the chamber, e.g. if the sputter deposition process should comprise also conditioning steps like degassing, etching, heating, and/or cooling, in front or behind the sputter deposition step within the same chamber. However, as a bottom loading sputter chamber as shown can be mounted, e.g. above an object handling level of a multi-chamber processing system, which comprises further processing modules, features relevant to sputtering and uniformity of the deposited coatings are in the focus of the further explanations.
[0098]
[0099] Similarly,
[0100] With a configuration as shown in
[0101] Alternatively, instead of sweeping through the complete angle sector between 0 and 90?, the magnetic system may be stepwise positioned in different angular positions which may be in the case of
[0102] As an example, for coating of short cylindric, or prismatic objects having a relatively short dimension z and surface S.sub.v compared to a relatively big dimension d and surface S.sub.h of a diameter of the cylinder (as shown in
(t.sub.v?P.sub.v)/(t.sub.h?P.sub.h)=k??(S.sub.v)/Z(S.sub.h)
where k is a constant which would be 2 in case of a cubic object or in case of a cylinder of equal height and diameter. As above, sputter dwell time can be the time a certain surface area is exposed to the sweeping sputter cone or the number of object rotations the respective surface is exposed to a sputter cone of a temporarily stationary sputter cone.
[0103] Therewith angular velocity ? of the magnetic system, which is in inverse ratio to the dwell time and defines respective angle ?.sub.x of the position of the racetrack and resulting sputter cone, as well as step by step positioning can be used to define and optimize the coating thickness as well as other coating parameters separately for respective surfaces S.sub.h, S.sub.v. With reference to surface S.sub.c, in case of
[0104] As mentioned above the same effect can be produced by stopping the magnetic system in defined angular positions to perform sputtering for at least one 360? turn of the object holder. Varying distances between the racetrack on the target surface and the object surface in the respective object plane O.sub.x which arise due to deviations from a cylindric shape at or near the respective object plane can then be compensated by power modulations, e.g. applying a lower power for surfaces passing the race track in a closer distance and applying a higher power for surfaces passing the racetrack in distance further away, see also
[0105] As an example for cylindric objects, targets can be aligned with an alignment mechanism 21 symbolized by a pair of x/z double arrows (only shown with axis Y.sub.2) so that the magnetic systems can be positioned, e.g. in such a way, that ?.sub.x is in line with the angle bisector line BL, which divides surface edge section S.sub.c in two subsectors I, II, when the sputter cone of targets 3, respectively 4 is directed towards the respective circumferential edge of the 3D object. In case of the cylinder in
[0106] In case of similar surface and geometric relations, as with cubes, or cuboids of similar side dimension, cylinders of similar height and diameter or regular prisms of similar height and lateral dimensions a constant power P can be used to sweep continuously or stepwise over the vertical respectively horizontal surfaces of the 3D object during the coating process.
[0107]
[0108] In a further embodiment of the invention a flat 3D-object 8 can be positioned and rotated in a central object plane O overlapping with the targets in a Z-projection as shown in in
[0109] To introduce and position the 3D-object into the coating chamber 2 it is first put on the object holder with its long horizontal side a in parallel to target axes Y.sub.1, Y.sub.2 and the chamber port 12 closed in the following, double arrows here showing movement directions of the closure 12. In this position object 8 and substrate holder 9 are shown in dashed double dotted lines at the bottom of the chamber. Thereafter the holder lifts the object along axis Z into a respective parallel position in the object plane O as shown with reference numbers 8 for the object and 9 for the holder. The vertical object axis Zo is aligned with rotation axis Z of the holder. Only than rotation can be initiated to bring the object into different coating positions whereat ?=0 in a parallel position as shown in dash-dotted lines, whereas reference number 8 here shows the substrate in solid lines in an ?=90? position, see also
[0110] To align the sputter cathodes and thereby targets 3, 4 also in a vertical direction to 3D-objects of different dimension z at least the upper electrode 4 can be moved also in a Z-direction as symbolized by the vertical double arrows of the alignment mechanism 21 for target axis Y.sub.2.
[0111] In
[0112]
[0113] With
[0114] For simple rotational geometries as discussed above and moderate substrate rotation speeds swiveling of the magnetic system may be synchronized with the rotation of the substrate holder and the respective circumferential geometry of the object(s) on the holder, so that the sputter cone follow at least approximately the respective surface area to be coated. Such a swivel curve showing the dependency of position angle ? from object rotation angle ? is shown in
[0115] In case of higher substrate rotation, e.g. equal or higher 0.2 or 0.5 rounds per second however, due to the inertia of the magnetic system another principle should be applied to avoid mechanical overload of the system. Therefore, as mentioned above, the magnet is swiveled to a defined ?-position and stationary hold at the position for a certain number of substrate rotations and then moved to at least one, but usually to further, e.g. 3 to 6 different ?-positions to produce a good coating distribution on the 3D-object. It has to be noted that different ?-positions may be applied with the same of different coating time, i.e. same or different number of rotations, depending on the geometric details of the object.
[0116]
[0117] With
[0118] With
[0119] A complete power curve which can be used to synchronize the power of targets 3, 4 with the rotation angle ? of a cuboid 3D-object is shown in
[0120] As could be shown hereby power synchronization can be more easily applied and more finely tuned to any object geometry, compare also curves of
[0121] The coating chamber in
[0122]
[0123]
[0124] When using a wider angle of the dark room shield aperture 24 a system with three or two equidistantly positioned magnetic systems would suffice, e.g. for an aperture of 120? respectively 180?. Otherwise for less productive systems even one rotating system 6 may suffice and plasma is reignited each time the magnetic system starts to pass under the open target surface in the aperture area.
[0125] At the same time when the magnetic system 6 passes under the aperture 24 power may be modulated according to power graph 25 as shown in the dash dotted curve above the respective target surface. Therewith power can be set low when the magnetic system passes or stands in a ?.sub.x position of about 45?, opposite to the near surface area S.sub.c of a circumferential edge, protrusion or similar of the rotated 3D-object 8. Therewith the particle flow as symbolized by short arrow 15 will be smaller than inside surface areas S.sub.h, S.sub.v further away from the target surface when the racetrack passes an angle of about 30? or 60?, which is symbolized by longer particle flow arrows 15. Therewith a more uniform coating distribution between edge or protrusion areas and side areas of the 3D-object can be reached and even small differences or asymmetries in edge convexity as exemplarily shown in dash double dotted lines can be taken into account.
[0126] Respective power curves as shown and discussed at the hand of
[0127] Finally, it should be mentioned that a combination of features mentioned with one embodiment, examples or types of the present invention can be combined with any other embodiment, example, or type of the invention unless being obviously in contradiction.
[0128] Several tests and experiments have been performed with a Solaris S115 multi-chamber system from Evatec AG, one process chamber having been adapted with two cathodes using targets of the same target material for one deposition process. Chamber volume was about 60 liters, targets of 300 mm length and an outer diameter from 105 to 110 mm have been used. The targets could be aligned in a horizontal plane towards axis Z according to the respective substrate dimensions, the upper target could be aligned also in a z-direction. Preprocessing steps (degassing, etching, adhesion layer) have been performed in separate chambers when necessary. 3D-objects of cylindric or cuboid shape of the following dimensions have been coated: [0129] Cylindric shape: Diameter from 50 to 200 mm, height from 5 to 20 mm each having one circumferential protrusion from 5 to 20 mm projecting from the sidewall(s) of the 3D-object, or at least one circumferential convex edge between vertical sidewall(s) and horizontal terminal surfaces have been foreseen. Edge radius for the convex edge was 3, 8, and 15 mm. Protrusions had a square or a convex semi-circular shape. [0130] Cuboid shape: base dimensions a/b from 1 to 3, with side a varying from 50 to 200 mm, height from 5 to 20 mm; protrusions respectively edges as mentioned with cylinder. [0131] As target material aluminum, chromium, titanium has been used in inert and reactive gas atmosphere. Respective process parameters are shown in table 1 below. [0132] Coating uniformities between 5 to 15 percent could be achieved for all surfaces of the 3D-body. Even better uniformities could be reached for sidewall and convex edge, respectively protrusion surfaces alone.
TABLE-US-00001 TABLE 1 Process parameters: Example Unit Range 1 Range 2 Range 3 Argon gas flow: 8 sccm 0-60 0-140 0-12 Nitrogen gas flow: 16 sccm 10-120 0-100 0-25 Chuck gas flow: 3 sccm 0-20 no 2-6 Chuck gas pressure: 4 mbar 0-20 no 3-8 Process gas 3.00E?03 mbar 5e?2-5e?4 5e?2-5e?4 1e?3-5e?3 pressure: pulsed DC power 1000 W 100-10000 100-10000 400-1600 Al, Cr, Ti Target object 45 mm 10-80 40-50 distance:
REFERENCE NUMBERS
[0133] 1,1 sputtering apparatus [0134] 2,2 coating chamber [0135] 3 lower rotary target [0136] 4 upper rotary target [0137] 5 target [0138] 5 further rotary target [0139] 6 swivel mounted magnetic system [0140] 6 rotatable mounted magnetic system [0141] 7 power supply [0142] 7 bipolar pulsed power supply [0143] 8 3D object [0144] 8 3D object in load position [0145] 8 protrusion [0146] 8 recess [0147] 9,9,9 object holder (pedestal type, internal, screwed, . . . ) [0148] 10 holder post [0149] 11 holder drive [0150] 12 chamber port [0151] 12 closure of the chamber port [0152] 13 pumping system [0153] 14 control system [0154] 15 particle flow (symbolized) [0155] 16 plasma cone (symbolized) [0156] 17 carrousel [0157] 18 inner circumference of a hollow object [0158] 19 bias supply (DC, RF) [0159] 20 holder lifter for holder movement in Z-direction [0160] 21 alignment mechanism for target axis [0161] 22 inscribed diameter [0162] 23 darkroom shield [0163] 24 aperture [0164] 25 power graph [0165] 26 inlet inert gas [0166] 27 inlet reactive gas [0167] 28 vacuum or pumping port [0168] ? angel of the holder/object rotation (0? and 180?=parallel to targets); [0169] ?, ?.sub.x position angel of the magnetic system ?.sub.x=0? when in parallel to axis Z; ?.sub.x=90? when vertical to axis Z); [0170] ?.sub.E ?.sub.x when directed directly to the edge protrusion, recess [0171] ? angular velocity of angle ? [0172] BL angle bisector line of object edge [0173] O.sub.x object plane [0174] O object plane (see definition); [0175] O first terminal (lower) object plane [0176] O second terminal (upper) object plane [0177] P sputter power [0178] S.sub.c convex surface comprising sub sectors I and II [0179] S.sub.h surface in parallel ?45?, preferably ?30? deviation to object plane, e.g. in O, O; [0180] S.sub.v surface in a right angle ?45? to O, preferably ?30? deviation from right angle to object plane; [0181] Y.sub.1,2 target axis [0182] Z holder axis=object axis [0183] Z carrousel axis [0184] Z satellite axis [0185] .Math. movement arrows, magnetic system, target axis, substrate holder.