SWITCHABLE CLAMPS ACROSS ATTENUATORS

Abstract

Methods and devices for limiting the power level of low noise amplifiers (LNA) implemented in radio frequency (RF) receiver front-ends. The described methods are applicable to bypass, low and high gain modes of the LNA. According to the described methods, the decoder allows the signal to be clamped before or after being attenuated. The benefit of such methods is to improve large signal performances (e.g. IIP3, P1dB) of the RF receiver front-end, while still meeting the clamping requirements, or improve (lower) clamped output power, while still meeting large signal performances (e.g. IIP3, P1dB).

Claims

1.-25. (canceled)

26. A radio frequency (RF) circuit comprising: a first attenuating element disposed in a first signal path, and a first clamping circuit configured to selectively clamp an input signal through the first signal path at an input of the first attenuating element or at an output of the first attenuating element, thereby maintaining a signal power level at the output of the first attenuating element.

27. The RF circuit of claim 26, wherein the first clamping circuit is selectively connected to the input and the output of the attenuating element through a clamping switch.

28. The RF circuit of claim 27, where in the first attenuating element comprises one or more first attenuators.

29. The RF circuit of claim 28, wherein the one or more first attenuators are individually switchable.

30. The RF circuit of claim 29, further comprising one or more first attenuator switches coupled across corresponding one or more switchable attenuators, the one or more first attenuator switches being configured to selectively switch in and out and the corresponding one or more switchable attenuators based on performance requirements of the RF receiver front-end.

31. The RF circuit of claim 30, further comprising a low noise amplifier (LNA) and an output switch configured to selectively connect an output of the RF circuit to a) an output of the LNA or b) the output of the first attenuating element.

32. The RF circuit of claim 31, configured, in a bypassing mode, to convey the input signal from the first signal path input and through the first signal path to the output of the RF circuit, thereby bypassing the LNA.

33. The RF circuit of claim 32, wherein the LNA is disposed in a second signal path, the second signal path being different from the first signal path.

34. The RF receiver circuit of claim 33, configured, in a high gain mode, to convey the input signal through second signal path and the LNA, to the output of the RF circuit.

35. The RF circuit of claim 34, further comprising a second attenuating element, and wherein an output of the second attenuating element is coupled to the input of the first attenuating element and to an input of the LNA.

36. The RF circuit of claim 35, configured, in a low gain mode, to convey the input signal through a portion of the first signal path and through a third signal path including the second attenuating element and the LNA, to the output of the RF circuit.

37. The RF circuit of claim 36, wherein the second attenuating element comprises one or more second attenuators.

38. The RF circuit of claim 37, wherein the one or more second attenuators are selectively switchable.

39. The RF circuit of claim 38, further comprising one or more second attenuator switches coupled across corresponding one or more switchable second attenuators, the one or more second attenuator switches being configured to selectively switch in and out and the corresponding one or more switchable first attenuators based on performance requirements of the RF circuit.

40. The RF circuit of claim 35, further comprising a second clamping circuit configured to selectively clamp the input signal through the first signal path at an input of the second attenuating element or at an output of the second attenuating element.

41. The RF circuit of claim 35, further comprising a third attenuating element coupling the output of the LNA to the output of the RF circuit.

42. The RF circuit of claim 41, wherein the third attenuating element comprises one or more third attenuator, the one or more third attenuators being switchable.

43. The RF circuit of claim 42, further comprising one or more third attenuator switches coupled across corresponding one or more switchable third attenuators, the one or more third attenuator switches being configured to selectively switch in and out and the corresponding one or more switchable third attenuators based on performance requirements of the RF circuit.

44. The RF circuit of claim 43, further comprising a third clamping circuit configured to selectively clamp the input signal through at an input of the third attenuating element or at an output of the third attenuating element.

Description

DESCRIPTION OF THE DRAWINGS

[0014] FIG. 1 shows a prior art circuit illustrating a clamping method.

[0015] FIG. 2 shows an exemplary circuit illustrating the clamping concept according to an embodiment of the present disclosure.

[0016] FIGS. 3A-3D show exemplary RF receiver front-ends according to embodiments of the present disclosure.

[0017] FIG. 4 shows an exemplary circuit arrangement using a clamping technique according to an embodiment of the present disclosure.

[0018] FIGS. 5A-5D show exemplary implementations of attenuators.

[0019] FIGS. 6A-6B show exemplary implementations of clamping circuits.

[0020] Like reference numbers and designations in the various drawings indicate like elements.

DETAILED DESCRIPTION

[0021] Clamping circuits or clamps are arrangements that reduce the power level of a signal to an acceptable value (i.e. less than a set threshold) in order to prevent overvoltage conditions.

[0022] FIG. 1 shows a prior art circuit (100) illustrating the typical way clamping is performed. Circuit (100) can be used, for example, in the bypass path of an LNA implemented in an RF receiver front-end. As can be seen, the clamping is performed at input (IN) of attenuator (A1). The clamped signal is then passed through attenuator (A1) to generate an attenuated signal at output (OUT). As mentioned previously, although such an approach preserves maximum clamping, it degrades the large signal performance (e.g. IIP3/P1dB) of the RF receiver front-end.

[0023] FIG. 2 shows a circuit (200) illustrating the clamping concept in accordance with the teachings of the present disclosure. Circuit (200) may be implemented, for example, as part of an RF receiver front-end and includes switch (S0), attenuator (A1) and clamping circuit (Clamp1). In contrast with circuit (100) of FIG. 1, in the embodiment of FIG. 2, clamping may selectively be performed either at input (IN) or at output (OUT) of attenuator (A1). In accordance with an embodiment of the present disclosure, switch (S0) may be controlled based on specific requirements, gain modes (e.g. some gain modes do not require high IIP3), frequency band (e.g. lower frequencies inherently clamp at higher power, and higher frequencies clamp at lower power), or any other desired control logic. The person skilled in the art will appreciate that, by virtue of clamping the signal, for example, at output (OUT), the clamping performance may slightly be degraded (still staying well within the specifications) while improving the IIP3/P1dB performance by the attenuation value provided by attenuator (A1).

[0024] In order to further clarify the above-disclosed concept and associated benefits, exemplary embodiments of the present disclosure will be described more in detail below.

[0025] FIG. 3A shows an exemplary RF receiver front-end (300A) according to an embodiment of the present disclosure. RF receiver front-end (300A) comprises a DPNT double-pole N-throw switch (301) with inputs (in_1, . . . , in_N) selected based on the desired frequency band, inductor (L1), LNA (302), switchable attenuators (Aij, i=1, . . . , 3, j=1,2), clamping circuits (clamp1, . . . , clamp3), and switches (S1, S2, Sij, i, j=1, . . . , 3). Switches (S11, S21, S31) may be single-pole N-throw (SPNT) switches with an isolation (ISO) mode or any other type of switches depending on overall performance requirements. As described further in detail below, depending on the states of such switches, different signal paths (depending on the selected gain modes) and various clamping points with different attenuations can be selected. According to the teachings of the present disclosure, the clamping capability may be provided, alone or in combination: [0026] a) before switch (S1) (Clamp1+switch (S11)) [0027] b) after switch (S1) (Clamp2+switch (S21)), and/or [0028] c) after the LNA output (Clamp3+switch (S31)).

[0029] FIG. 3B shows RF receiver front-end (300A) of FIG. 3A operating in bypass passive mode where the signal path is indicated by dotted line (310). In a preferred embodiment, switchable clamping is performed after switch (S1). In this case, depending on the states of switches (S21, S22, S23), either one of or both attenuators (A21, A22) can be switched in and clamping may be performed at the input or output of either attenuator (A21, A22). In this preferred embodiment of clamping after switch (S1)) in the bypass passive mode: [0030] a1. clamping will have no impact on the overall performance in the active mode where the signal path is through LNA (302). [0031] a2. activation of clamping circuit (Clamp1) and associated switch (S11) is optional. [0032] a3. clamping circuit (Clamp3), switches (S31, S32, S33), and attenuators (A31, A32) may be optional. [0033] a4. the state of switches (S12, S13, S22, S23) depends on the performance requirements and the desired attenuation in the signal path.

[0034] With further reference to FIG. 3B, an alternative embodiment for the bypass mode may be envisaged where clamping is performed before switch (S1) and using clamping circuit (Clamp1) instead of (Clamp2). In this case, depending on the states of switches (S11, S12, S13), either or both attenuators (A11, A12) can be switched in and clamping may be performed at the input or output of any of the attenuators (A11, A12). In such alternative embodiment for the bypass mode: [0035] b1. large signal performance (IIP3, P1dB) in low gain, active mode may be degraded [0036] b2. Activation of clamping circuit (Clamp2) and associated switch (S21) is optional [0037] b3. clamping circuit (Clamp3), switches (S31, S32, S33), and attenuators (A31, A32) may be optional [0038] b4. the state of switches (S12, S13, S22, S23) depends on the performance requirements and the desired attenuation in the signal path [0039] b5. attenuators (A21, A22) and corresponding switches (S22, S23) are optional.

[0040] FIG. 3C shows RF receiver front-end (300A) of FIG. 3A operating in low gain active mode where the signal path is indicated by dotted line (311). In the low gain active mode the signal is attenuated before passing through the LNA to the output. In a first embodiment: [0041] c1. clamping is performed using clamping circuit (Clamp1). [0042] c2. Activation of clamping circuit (Clamp3) and the corresponding switch (S31) is optional. [0043] c3. Either one of or both switchable attenuators (A11, A12) may be selectively switched in through switch (S11) and clamping may selectively be performed at the input or output of the switchable attenuators (A11, A12).

[0044] With reference to FIG. 3C, in a second embodiment: [0045] d1. clamping is performed downstream of LNA (302) using clamping circuit (Clamp3). [0046] d2. activation of clamping circuit (Clamp1) and the corresponding switch (S11) is optional. [0047] d3. Either or both switchable attenuators (A31, A32) may be selectively switched in through switches (S32, S33) and clamping may selectively be performed at the input or output of the switchable attenuators (A31, A32).

[0048] With further reference to FIG. 3C, embodiments may also be envisaged where no clamping is performed in low gain, active mode, meaning that clamping circuits (Clamp1, Clamp3) are not activated and the corresponding switches (S11, S31) do not select any position and are placed in an isolated mode (ISO).

[0049] FIG. 3D shows RF receiver front-end (300A) of FIG. 3A operating in high gain active mode where the signal path is indicated by dotted line (312). In the high gain active mode the signal is not attenuated before passing through the LNA to the output. In this mode, as mentioned previously, clamping should occur if the inherent saturation power of the LNA is greater than the required maximum power at the LNA output. In this case, clamping is performed using clamping circuit (Clamp3) and the corresponding switch (S31). Either or both switchable attenuators (A31, A32) may be selectively switched in and clamping may selectively be performed at the input or output of the switchable attenuators (A31, A32).

[0050] There may be cases in which clamping cannot be performed at the input of LNA (302) or where stringent NF (noise figure) requirements have to be implemented in the low gain mode. In such cases, embodiments of the present disclosure can be provided where clamping occurs with switchable clamps (Clamp2, Clamp3) only. In particular: [0051] in the embodiment of FIG. 3B only switchable Clamp2 will be activated; and [0052] in the embodiment of FIGS. 3C and 3D only switchable Clamp 3 will be activated.

[0053] With reference to FIGS. 3A-3D, the person skilled in the art will understand that an arbitrary number of attenuators can be used in any mode and in conjunction with each clamping circuit. This is shown in FIG. 4 where a clamping circuit (Clamp) together with a single pole m-throw switch (S4) is implemented to selectively switch in an out an arbitrary number of attenuators (A1, . . . , Am). Embodiments are also possible where the number of attenuators pertaining to one clamping circuit+switch is independent from the number of attenuators pertaining to another clamping circuit+switch. In accordance with the teachings of the present disclosure: [0054] A) switch (S4) may either be in one of positions (1, 2, . . . , m), or [0055] B) switch (S4) may not be in any of positions (1, 2, . . . , m) such that clamping circuit (Clamp) is disconnected from attenuators (A1, . . . , Am) and rest of the circuit.
Throughout the disclosure, and for the case A above, the clamping circuit (Clamp) is said to be active, and for the case B above, the clamping circuit (Clamp) is said to be inactive. With reference to FIGS. 3A-3D, and 4, cases A and B above also apply to switches (S11, S21, S31). Moreover, terms active and inactive as described above also apply to clamp circuits (Clamp1, Clamp3) of FIGS. 3A-3D.

[0056] With reference to FIGS. 3A-3D, embodiments implementing all three clamping circuits may be envisaged. In operative conditions, such embodiments may operate based on the following: [0057] in the high gain mode, clamping circuit (Clamp3) may be active and clamping circuits (Clamp1, Clamp2) may be inactive [0058] in the low gain mode, clamping circuit (Clamp1) may be active and clamping circuits (Clamp2, Clamp3) may be inactive [0059] in the low gain mode, clamping circuits (Clamp1 and Clamp3) may be active and clamping circuit (Clamp2) may be inactive [0060] in the bypass mode, clamping circuit (Clamp2) may be active and clamping circuits (Clamp1, Clamp3) may be inactive or clamping circuit (Clamp1) may be active and Clamping circuits (Clamp2, Clamp3) may be inactive. [0061] in the bypass mode, clamping circuits (Clamp1 and Clamp2) may be active and clamping circuit (Clamp3) may be inactive

[0062] With further reference to FIGS. 3A-3D, according to embodiments of the present disclosure, LNA (302) may comprise single input, multi-input, single gain mode, or multi gain mode LNAs or a combination thereof. Additionally, while a low noise amplifier (LNA) is described here as a preferred embodiment, the person skilled in the art will understand that other kinds of RF amplifiers, not necessarily LNAs, may be adopted. Each of the switches (Sij, i-=1, . . . , 3, j=2,3) across the attenuators may be optional and therefore, each of the attenuators (Aij, i=1, . . . , 3, j=1,2) may be a fixed or a switchable attenuator. Each of the attenuators (Aij, i=1, . . . , 3, j=1,2) may have any configuration. Examples are Pi, T, switchable Pi, switchable T attenuators as shown respectively in FIGS. 5A-5D, a series resistor, or a combination thereof. Examples of implementation of each clamping circuit (Clamp1, Clamp2, Clamp3) are shown in FIGS. 6A-6B illustrating antiparallel diode connected NMOS pair, and antiparallel diode pairs configurations, respectively. PMOS pairs may also be used to implement such clamping circuits.

[0063] With further reference to FIGS. 3A-3D, the person skilled in the art will appreciate that: [0064] the implemented switches used in tandem with clamping circuits do not need to meet stringent ON resistance (Ron) requirements. The reason is that clamping is active when the input power surges to higher levels, at which point stringent overall performance requirements for the receiver front-end or the LNA do not generally apply. [0065] the implemented switches used in tandem with clamping circuits do not need to meet stringent size requirements commonly imposed due to electrostatic discharge (ESD). The reason is that such switches are protected on the input side by DPNT switch (301) and also on the output side by switch (S2).

[0066] The person skilled in the art will understand that the usage of the disclosed methods and devices is not limited to RF receiver front-ends or the LNAs, and such methods and devices can also be applied to or implemented at any point(s) in the electronic circuits where clamping is needed.

[0067] The term MOSFET, as used in this disclosure, includes any field effect transistor (FET) having an insulated gate whose voltage determines the conductivity of the transistor, and encompasses insulated gates having a metal or metal-like, insulator, and/or semiconductor structure. The terms metal or metal-like include at least one electrically conductive material (such as aluminum, copper, or other metal, or highly doped polysilicon, graphene, or other electrical conductor), insulator includes at least one insulating material (such as silicon oxide or other dielectric material), and semiconductor includes at least one semiconductor material.

[0068] As used in this disclosure, the term radio frequency (RF) refers to a rate of oscillation in the range of about 3 kHz to about 300 GHz. This term also includes the frequencies used in wireless communication systems. An RF frequency may be the frequency of an electromagnetic wave or of an alternating voltage or current in a circuit.

[0069] With respect to the figures referenced in this disclosure, the dimensions for the various elements are not to scale; some dimensions have been greatly exaggerated vertically and/or horizontally for clarity or emphasis. In addition, references to orientations and directions (e.g., top, bottom, above, below, lateral, vertical, horizontal, etc.) are relative to the example drawings, and not necessarily absolute orientations or directions.

[0070] Various embodiments of the invention can be implemented to meet a wide variety of specifications. Unless otherwise noted above, selection of suitable component values is a matter of design choice. Various embodiments of the invention may be implemented in any suitable integrated circuit (IC) technology (including but not limited to MOSFET structures), or in hybrid or discrete circuit forms. Integrated circuit embodiments may be fabricated using any suitable substrates and processes, including but not limited to standard bulk silicon, high-resistivity bulk CMOS, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS). Unless otherwise noted above, embodiments of the invention may be implemented in other transistor technologies such as bipolar, BiCMOS, LDMOS, BCD, GaAs HBT, GaN HEMT, GaAs pHEMT, and MESFET technologies. However, embodiments of the invention are particularly useful when fabricated using an SOI or SOS based process, or when fabricated with processes having similar characteristics. Fabrication in CMOS using SOI or SOS processes enables circuits with low power consumption, the ability to withstand high power signals during operation due to FET stacking, good linearity, and high frequency operation (i.e., radio frequencies up to and exceeding 300 GHz). Monolithic IC implementation is particularly useful since parasitic capacitances generally can be kept low (or at a minimum, kept uniform across all units, permitting them to be compensated) by careful design.

[0071] Voltage levels may be adjusted, and/or voltage and/or logic signal polarities reversed, depending on a particular specification and/or implementing technology (e.g., NMOS, PMOS, or CMOS, and enhancement mode or depletion mode transistor devices). Component voltage, current, and power handling capabilities may be adapted as needed, for example, by adjusting device sizes, serially stacking components (particularly FETs) to withstand greater voltages, and/or using multiple components in parallel to handle greater currents. Additional circuit components may be added to enhance the capabilities of the disclosed circuits and/or to provide additional functionality without significantly altering the functionality of the disclosed circuits.

[0072] Circuits and devices in accordance with the present invention may be used alone or in combination with other components, circuits, and devices. Embodiments of the present invention may be fabricated as integrated circuits (ICs), which may be encased in IC packages and/or in modules for ease of handling, manufacture, and/or improved performance. In particular, IC embodiments of this invention are often used in modules in which one or more of such ICs are combined with other circuit blocks (e.g., filters, amplifiers, passive components, and possibly additional ICs) into one package. The ICs and/or modules are then typically combined with other components, often on a printed circuit board, to form part of an end product such as a cellular telephone, laptop computer, or electronic tablet, or to form a higher-level module which may be used in a wide variety of products, such as vehicles, test equipment, medical devices, etc. Through various configurations of modules and assemblies, such ICs typically enable a mode of communication, often wireless communication.

[0073] A number of embodiments of the invention have been described. It is to be understood that various modifications may be made without departing from the spirit and scope of the invention. For example, some of the steps described above may be order independent, and thus can be performed in an order different from that described. Further, some of the steps described above may be optional. Various activities described with respect to the methods identified above can be executed in repetitive, serial, and/or parallel fashion.

[0074] It is to be understood that the foregoing description is intended to illustrate and not to limit the scope of the invention, which is defined by the scope of the following claims, and that other embodiments are within the scope of the claims. In particular, the scope of the invention includes any and all feasible combinations of one or more of the processes, machines, manufactures, or compositions of matter set forth in the claims below. (Note that the parenthetical labels for claim elements are for ease of referring to such elements, and do not in themselves indicate a particular required ordering or enumeration of elements; further, such labels may be reused in dependent claims as references to additional elements without being regarded as starting a conflicting labeling sequence).