Method for densifying porous annular substrates by chemical vapour infiltration
11549176 · 2023-01-10
Assignee
Inventors
- Franck Lamouroux (Moissy-Cramayel, FR)
- Rémy Dupont (Moissy-Cramayel, FR)
- William Ros (Moissy-Cramayel, FR)
Cpc classification
C23C16/045
CHEMISTRY; METALLURGY
C23C16/46
CHEMISTRY; METALLURGY
C23C16/4583
CHEMISTRY; METALLURGY
International classification
Abstract
A process for densifying annular porous substrates by chemical vapour infiltration, includes providing a plurality of unit modules including a support plate on which is formed a stack of substrates, the support plate including a central gas inlet opening communicating with an internal volume formed by the central passages of the stacked substrates and gas outlet openings distributed angularly around the central opening, and a thermal mass cylinder disposed around the stack of substrates having a first end integral with the support plate and a second free end, forming stacks of unit modules in the chamber of a densification furnace, and injecting into the stacks of unit modules a gas phase including a gas precursor of a matrix material to be deposited within the porosity of the substrates.
Claims
1. A process for densifying annular porous substrates by chemical vapour infiltration, the process comprising: providing a plurality of unit modules, each unit module comprising a support plate on which is formed a stack of annular porous substrates, the support plate comprising a central gas inlet opening communicating with an internal volume formed by the central passages of the stacked substrates and gas outlet openings angularly distributed around the central opening, and a thermal mass cylinder wrapping the stack of substrates having a first end integral with the support plate and a second free end so that a closed peripheral duct is formed between the stacked substrates and the cylinder, forming stacks of unit modules in the chamber of a densification furnace, each stack comprising at least one second unit module stacked on a first unit module, the support plate of the second unit module resting on the second free end of the cylinder of the first unit module, the central gas inlet opening of the second unit module communicating with the internal volume of the stack of substrates of the first unit module, and the peripheral duct of the second unit module communicating with the peripheral duct of the first unit module via the gas outlet openings of the second unit module, and injecting into the stacks of unit modules a gas phase comprising a gas precursor of a matrix material to be deposited within the porosity of the substrates, wherein, to form a stack of annular porous substrate on the support plate of a unit module, arms of a loading device are inserted into the unit module through the outlet openings of the support plate, the stack of substrates is formed on the ends of the arms inserted into the unit module, and the arms are removed from the unit module so as to deposit the stack thus formed on the support plate.
2. The process as claimed in claim 1, wherein each cylinder is made of graphite.
3. The process as claimed in claim 1, wherein each unit module comprises shims between the porous substrates, each shim providing a leakage passage between the internal volume of the stack of substrates and the external volume to the stack of substrates.
4. The process as claimed in claim 1, wherein each support plate is circular in shape and has a diameter comprised between 110% and 120% of the outer diameter of an annular porous substrate.
5. The process as claimed in claim 1, wherein the chamber of the densification furnace is delimited by a susceptor coupled to an inductor.
6. The process as claimed in claim 1, wherein each annular porous substrate comprises carbon.
7. The process as claimed in claim 1, wherein each annular porous substrate constitutes a fibrous preform for a brake disc.
8. The process as claimed in claim 1, wherein the arms are vertical arms and wherein the loading device comprises a disc-shaped lower plate from which the vertical arms extend.
9. The process as claimed in claim 1, wherein the gas outlet openings of the second unit module communicate directly with the external volume to the stack of substrates of the first unit module.
10. The process as claimed in claim 1, wherein the external volume to the stack of substrates of the first unit module, the gas outlet openings of the second unit module and an external volume to the stack of substrates of the second unit module collectively form a gas channel.
11. The process as claimed in claim 1, wherein each of the gas outlet openings extends through an entire thickness of the support plate.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Other features and advantages of the present invention will be apparent from the description made below, with reference to the appended drawings which illustrate an example embodiment devoid of any limiting character. On the figures:
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DETAILED DESCRIPTION OF THE INVENTION
(7) A chemical vapour infiltration densification process according to the invention comprises, first, a step during which a plurality of unit modules 10 are provided (
(8) A unit module 10 first comprises a structural part 12 (
(9) A unit module 10 is then produced by forming a stack of annular porous substrates 18 on the support plate 14 of the structural part 12. Each annular porous substrate 18 has a central passage 18a. In general, the annular porous substrates 18 are stacked on the support plate 14 in such a way that the central inlet opening 14a communicates with an internal volume 17 formed by the central passages 18a of the stacked substrates 18, and the gas outlet openings 14b communicate with an external volume 19 to the stack of substrates 18, the external volume 19 being circumscribed inside the cylinder 16. The porous substrates 18 and the part 12 are centred on the same axis Y. In this example, the substrates 18 have a smaller outer diameter than the support plate 14. In particular, the diameter of the support plate 14 can be comprised for example between 110% and 120% of the outer diameter of a substrate 18. The diameter of the gas inlet opening 14a can be of the order of the diameter of a central passage 18a of a porous substrate 18.
(10) In the example shown, a porous substrate 18 is separated from an adjacent substrate or the support plate 14 by one or more spacing shims 20 that define intervals 20a (
(11) The passages provided by the shims 20 may offer a relatively restricted passage section so as to allow the existence of a pressure gradient between the volumes 17 and 19, as described in the patent application FR 2821859, then referred to as densification by forced-flow CVI (almost zero passage section) or semi-forced CVI (non-zero passage section). Thus, each unit module 10 comprises, in the example shown, a stack of substrates 18 between which are present shims 20, the stack of substrates 18 being placed on a shim 20 in contact with the support plate 14, and being surmounted by a shim 20 intended to be in contact with another unit module 10 or a cover 22 (
(12) The substrates 18 are for example carbon fibre preforms or blanks made of pre-densified preforms, intended for the production of brake discs made of carbon/carbon (C/C) composite material by densification with a pyrolytic carbon matrix.
(13) The design of a unit module 10 according to the invention makes it possible to form a stack of substrates 18 on a support plate 14 in a simple and automatable manner. An example of the sequence of steps to form a stack of substrates 18 on the support plate will be described in connection with
(14) First, a loading device 26 can be provided, comprising a disc-shaped lower plate 28 from which vertical arms 30 extend. The vertical arms 30 are disposed in a circle near the circumference of the lower plate 28 and positioned so that they can be inserted into the gas outlet openings 14b of the support plate 14 of a structural part 12. In the example shown, two adjacent vertical arms are connected at their opposite end to the lower plate 28 by a stack support element 32 which here describes an arc of a circle. The shape of stack support element 32 may correspond to the shape of a gas outlet opening 14b.
(15) A first step (
(16) Then, the arms 30 are inserted into the outlet openings 14b (
(17) The stack of substrates 18 can then begin to be formed on the arms 30, and more precisely on the stack support elements 32. In the example shown, the loading device 26 is lowered as a substrate 18 is added to the stack (
(18) Finally, the unit module 10, consisting of the structural part 12 and the stack of substrates 18, and possibly shims 20, can be removed from the loading device 26 (
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(20) To stack a second unit module 10 on a first unit module 10, the support plate 14 of the second unit module 10 is placed on the last shim 20 and the free end 16b of the cylinder 16 of the first unit module 10 below by centring the modules 10 along the same axis Y. The cylinder 16 of the first unit module 10 is thus in contact with the support plate 14 of the second unit module 10 so as to take up the mass of the latter. One or more seals may be present on the lower surface of a support plate 14 intended to be in contact with a free end 16b of a cylinder and/or on the free end of the cylinder 16b intended to be in contact with a support plate 14.
(21) In a stack of unit modules 10, the internal volumes 17 are in communication through the inlet openings 14a so as to form a central duct that allows a gas to be conveyed over the entire height of the stack. The external volumes 19 are also in communication through the outlet openings 14b so as to form a peripheral duct that allows the gases that have passed through the substrates 18 to be discharged.
(22) Each stack of unit modules 10 is surmounted by a cover 22 (
(23) At the base of each stack of unit modules 10, a unit module 10 is in contact with a bottom 34a of the chamber 34 so that its central inlet opening 14a is in communication with a gas inlet 36 provided in the bottom 34a and the outlet openings 14b of this unit module 10 are obstructed. There are, in this example, as many gas inlets 36 as there are stacks of unit modules 10 in the chamber 34.
(24) The chamber 34 comprises a heated wall 34b which here constitutes a susceptor laterally delimiting the chamber 34. More precisely, the wall 34b is here an armature which is inductively coupled with an inductor 38 present around the chamber 34. In the example shown, the loading of porous substrates 18 is adapted to the cylindrical shape of the chamber 34 around the axis X. In particular, the stacks of unit modules 10 are distributed in the chamber 10 around the axis X.
(25) Once the loading has been completed, a gas phase (or reactive gas) containing one or more carbon precursor constituents is introduced into the chamber 34 through the gas inlets 36. The introduced gas phase is conveyed, for each stack, to the central gas inlet opening 14a of the first unit module 10 of the stack. The gas phase then arrives in the internal volumes 17 formed by the central passages 18a of the substrates 18. The relatively large pressure difference between the central duct of each stack (corresponding to the union of the internal volumes 17) and the peripheral duct (corresponding to the union of the external volumes 19) ensures that the gas phase passes through the substrates 18 to densify them. Once the gas phase has passed through the substrates 18, it reaches the peripheral duct and can then be discharged through the outlet openings 22a of the cover 22. The gases discharged through the outlet openings 22a of the cover 22 can finally be recovered through an outlet opening (not shown) provided in an upper wall of the chamber 34, which may optionally be associated with suction means.
(26) Typically, the gas phase comprises a carrier gas and one or more matrix gas precursors. To form a carbonaceous matrix, methane, propane, or a mixture of the two can be used as gas precursors. The carrier gas can be natural gas.