Systems and Method for Providing Voltage Compensation for single-photon avalanche diodes

Abstract

The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.

Claims

1. A compensation system for a single-photon avalanche diode (SPAD), the system comprising: a reference voltage circuit coupled to a first input terminal and a second input terminal, the first input terminal being coupled to a reference temperature value associated with a breakdown voltage of the SPAD, the second input terminal being coupled to an operating temperature value, the reference voltage circuit being configured generate a reference voltage based at least on a difference between the reference temperature value and the operating temperature value; a comparator circuit comprising a first input and a second input, the comparator circuit being configured to generate an intermediate voltage; a charge pump circuit configured to provide a temperature compensation voltage based at least on the intermediate voltage; and a first resistor coupled to the charge pump circuit and the second input of the comparator circuit.

2. The system of claim 1 wherein the SPAD is couple to an SPAD array comprising a plurality of SPAD units.

3. The system of claim 1 further comprising a second resistor configured in series relative to the first resistor, the second resistor being grounded.

4. The system of claim 3 wherein the SPAD is coupled to the temperature compensation voltage, the SPAD being configured in parallel relative to the first resistor and the second resistor.

5. The system of claim 1 wherein the second input of the comparator circuit comprises an inverted input.

6. The system of claim 1 wherein the reference voltage circuit comprises a first plurality of switches for generating a first voltage and second plurality of switches for generating a second voltage, first plurality of switches being coupled to a first plurality of control bits based on the reference temperature value, the second plurality of switches being coupled to a second plurality of control bits based on the operating temperature value.

7. The system of claim 6 wherein the first plurality of switches is coupled to a first plurality of corresponding resistors, and the second plurality of switches is coupled to a second plurality of corresponding resistors.

8. The system of claim 1 wherein the reference voltage circuit comprises: a bandgap reference circuit configured to generate intermediate reference voltages; a temperature coefficient adjustment circuit coupled to the bandgap reference circuit, the temperature coefficient adjustment circuit being configured generate a first intermediate reference voltage based at least on the operating temperature value; a voltage adjustment circuit coupled to the bandgap reference circuit, the voltage adjustment circuit being configured generate a second intermediate reference voltage based at least on the reference temperature value; and a voltage superimposing circuit configured to generate a third intermediate reference voltage using at least the first intermediate reference voltage and the second intermediate reference voltage.

9. A reference voltage circuit for providing a reference voltage in a lidar system, the reference voltage circuit comprising: a bandgap reference circuit configured to generate intermediate reference voltages, the bandgap reference circuit comprising a plurality of bipolar junction transistors (BJTs) for providing a current proportional to absolute temperature; a temperature coefficient adjustment circuit coupled to the bandgap reference unit, the temperature coefficient adjustment circuit being configured generate a first intermediate reference voltage based at least on an operating temperature value; a voltage adjustment circuit coupled to the bandgap reference unit, the voltage adjustment circuit being configured generate a second intermediate reference voltage based at least on a reference temperature value; and a voltage superimposing circuit configured to generate a third intermediate reference voltage using at least the first intermediate reference voltage and the second intermediate reference voltage.

10. The circuit of claim 9 wherein the temperature coefficient adjustment circuit comprises a first plurality of switches corresponding to a first plurality of resistors, the first plurality of switches being configured to operate according to the operating temperature value.

11. The circuit of claim 10 wherein the voltage adjustment circuit comprises a second plurality of switches corresponding to a second plurality of resistors, the second plurality of switches being configured to operate according to the reference temperature value.

12. The circuit of claim 9 the voltage adjustment circuit comprises an operational amplifier and a voltage divider circuit.

13. The circuit of claim 12 wherein the voltage divider circuit comprises a variable resistor.

14. A compensation system for a single-photon avalanche diode (SPAD) array, the system comprising: a reference voltage circuit coupled to a first input terminal and a second input terminal, the first input terminal being coupled to a reference temperature value associated with a breakdown voltage of the SPAD array, the second input terminal being coupled to an operating temperature value, the reference voltage circuit being configured generate a reference voltage based at least on a difference between the reference temperature value and the operating temperature value; a comparator circuit comprising a first input and a second input, the comparator is configured to generate an intermediate voltage; and a charge pump circuit configured to provide a temperature compensation voltage based at least on the intermediate voltage; wherein the reference voltage circuit comprises: a temperature coefficient adjustment circuit coupled configured generate a first intermediate reference voltage based at least on the operating temperature value; and a voltage adjustment circuit configured generate a second intermediate reference voltage based at least on the reference temperature value.

15. The system of claim 14 wherein the reference voltage circuit further comprises a bandgap reference circuit configured to generate intermediate reference voltages, the bandgap reference circuit comprising a plurality of bipolar junction transistors (BJTs) for providing a current proportional to absolute temperature.

16. The system of claim 14 wherein the reference voltage circuit further comprises a voltage superimposing circuit configured to generate a third intermediate reference voltage using at least the first intermediate reference voltage and the second intermediate reference voltage.

17. The system of claim 14 further comprising a first resistor and a second resistor, the first resistor being coupled to the charge pump circuit and the second input of the comparator circuit.

18. The system of claim 14, wherein the reference voltage circuit comprises a first plurality of switches for generating a first voltage and second plurality of switches for generating a second voltage, first plurality of switches being coupled to a first plurality of control bits based on the reference temperature value, the second plurality of switches being coupled to a second plurality of control bits based on the operating temperature value.

19. The system of claim 14 further comprising a register for storing the reference voltage value.

20. The system of claim 14 wherein the temperature coefficient adjustment circuit is coupled to a voltage proportional to absolute temperature.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG. 1 is a schematic diagram of a circuit principle of a reference voltage generation module with an adjustable temperature coefficient according to the present invention.

[0035] FIG. 2 is a schematic diagram of a circuit of a band gap reference unit in a reference voltage generation module according to the present invention.

[0036] FIG. 3 is a schematic diagram of a circuit of a temperature coefficient adjustment unit in a reference voltage generation module according to the present invention.

[0037] FIG. 4 is a schematic diagram of a circuit of a voltage adjustment unit in a reference voltage generation module according to the present invention.

[0038] FIG. 5 is a schematic diagram of a circuit of an adjustable feedback subunit in a reference voltage generation module according to the present invention.

[0039] FIG. 6 is a schematic diagram of a circuit of a voltage superimposing unit in a reference voltage generation module according to the present invention.

[0040] FIG. 7 is a schematic diagram of a circuit principle of a power supply apparatus with an adjustable temperature coefficient according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0041] The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.

[0042] As mentioned above, existing voltage supplies for lidar systems are inadequate. For example, temperature can affect the sensitivity of a SPAD in a few ways. Temperature can affect the quantum efficiency of a SPAD, which is the proportion of incident photons that are detected by the device. As the temperature decreases, the quantum efficiency typically increases, leading to higher sensitivity. Temperature can also affect the dark count rate of a SPAD, which is the number of false detections that occur in the absence of incident photons.

[0043] As the temperature decreases, the dark count rate typically decreases, leading to higher sensitivity. Temperature can affect the noise performance of SPAD, which determines how accurately the device can detect low-intensity signals. As temperature increases, the bread down voltage of a SPAD in lidar typically decreases. This is because higher temperatures can cause the SPAD to become more susceptible to breakdown, leading to a lower breakdown voltage. Additionally, high temperatures can also cause the SPAD to become more sensitive to light, leading to a lower breakdown voltage. This can affect the accuracy and performance of the lidar system. As an example, a source voltage provided by the system to the two ends of the SPAD is constant, for example, 27V. However, a breakdown (BD) voltage on the two ends of the SPAD changes with temperature. If the temperature rises, causing V.sub.BD (that is, the breakdown voltage) to rise to, for example, 27.5V, the SPAD that is originally in the breakdown critical state is in a sub-avalanche state. In this case, even if reflected light is emitted to the SPAD, an avalanche effect is not caused, which reduces a light sensing capability and detection accuracy. It is to be appreciated that embodiments of the present invention compensate temperature-related SPAD variation by adjusting the SPAD supply voltage accordingly.

[0044] The following description is presented to enable one of ordinary skill in the art to make and use the invention and to incorporate it in the context of particular applications. Various modifications, as well as a variety of uses in different applications will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to a wide range of embodiments. Thus, the present invention is not intended to be limited to the embodiments presented, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0045] In the following detailed description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without necessarily being limited to these specific details. In other instances, well-known structures and devices are shown in block diagram form, rather than in detail, in order to avoid obscuring the present invention.

[0046] The reader's attention is directed to all papers and documents which are filed concurrently with this specification and which are open to public inspection with this specification, and the contents of all such papers and documents are incorporated herein by reference. All the features disclosed in this specification, (including any accompanying claims, abstract, and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Thus, unless expressly stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.

[0047] Furthermore, any element in a claim that does not explicitly state “means for” performing a specified function, or “step for” performing a specific function, is not to be interpreted as a “means” or “step” clause as specified in 35 U.S.C. Section 112, Paragraph 6. In particular, the use of “step of” or “act of” in the Claims herein is not intended to invoke the provisions of 35 U.S.C. 112, Paragraph 6.

[0048] Please note, if used, the labels left, right, front, back, top, bottom, forward, reverse, clockwise and counter clockwise have been used for convenience purposes only and are not intended to imply any particular fixed direction. Instead, they are used to reflect relative locations and/or directions between various portions of an object.

[0049] A reference voltage generation module with an adjustable temperature coefficient provided in the present invention may generate a reference voltage and input the reference voltage to a charge pump for power supply, and is mainly configured to enable an output voltage of the charge pump to change with temperature, to ensure that the output voltage thereof is loaded on a single photon avalanche diode (SPAD) array, so as to enable the SPAD to enter an avalanche critical point state.

[0050] Referring to FIG. 1, the reference voltage generation module with an adjustable temperature coefficient in the present invention includes band gap reference unit 11 and temperature coefficient adjustment unit 12. The band gap reference unit 11 is connected to the temperature coefficient adjustment unit 12.

[0051] The band gap reference unit 11 is configured to output a bias current I.sub.ref1 with a positive temperature coefficient and a first voltage V.sub.be with a negative temperature coefficient, where the bias current I.sub.ref1 flows through a bias resistor R to form a bias voltage V.sub.ptat. The temperature coefficient adjustment unit 12 is configured to output an initial reference voltage V.sub.ref1 with an adjustable temperature coefficient to a charge pump for power supply according to the bias voltage V.sub.ptat, the first voltage V.sub.be, and a first output value of an external register, so that a voltage outputted by the charge pump changes with temperature, and the output voltage of the charge pump is synchronized with a change of a light receiving sensor, thereby greatly improving stability, a light sensing capability and a detection effect of the light receiving sensor when the temperature changes. As an example, the term “PTAT” refers to voltage or current value that is proportional to absolute temperature, which is useful for providing compensation voltage to SPAD circuits.

[0052] Still referring to FIG. 1, the reference voltage generation module with an adjustable temperature coefficient in the present invention further includes voltage adjustment unit 13 and a voltage superimposing unit 14. The voltage adjustment unit 13 is connected to the band gap reference unit 11, an input end of the voltage superimposing unit 14 is connected to the temperature coefficient adjustment unit 12, and another input end of the voltage superimposing unit 14 is connected to the voltage adjustment unit 13.

[0053] The band gap reference unit 11 is further configured to output a second voltage V.sub.bg (that is, a reference voltage V.sub.bg) with a temperature coefficient of 0. The voltage adjustment unit 13 is configured to output a compensation voltage V.sub.ref0 according to the second voltage V.sub.bg and a second output value of the external register. The voltage superimposing unit 14 is configured to superimpose the initial reference voltage V.sub.ref1 and the compensation voltage V.sub.ref0 and output a reference voltage V.sub.ref, where a temperature coefficient of the reference voltage V.sub.ref is adjustable.

[0054] Referring to FIG. 2, in an exemplary embodiment, there are three output signals in the band gap reference unit 11. A first signal is the reference voltage V.sub.BG with a temperature coefficient of 0, where first signal is calculated using the equation below:

[00001]$\mathrm{VBG}=V_{\mathrm{BE}3}+\frac{V_T\ln n}{R01}*R02$

[0055] A second signal is a current I.sub.PTAT that is in direct proportion to an absolute temperature, where a calculation formula for the second signal is as follows:

[00002]$I_{\mathrm{PTAT}}=\frac{V_T\ln n}{R_1}$

[0056] The current I.sub.PTAT flows through a resistor R to form V.sub.PTAT, and then a bias voltage V.sub.ptat is formed, and the bias voltage V.sub.ptat is a voltage with a positive temperature coefficient.

[0057] A third output signal is a base-emitter voltage V.sub.BE of a triode with a negative temperature coefficient.

[0058] Now referring back to FIG. 1. Preferably, in the reference voltage generation module with an adjustable temperature coefficient in the present invention, a first voltage follower B1 is arranged between a bias current output end of the band gap reference unit 11 and the temperature coefficient adjustment unit 12, a second voltage follower B2 is arranged between a first voltage output end of the band gap reference unit 11 and the temperature coefficient adjustment unit 12, and/or a third voltage follower B3 is arranged on an output end of the voltage superimposing unit 14. All the first voltage follower B1, the second voltage follower B2, and the third voltage follower B3 has the functions of buffering and improving a driving capability.

[0059] In an embodiment, the bias voltage V.sub.ptat flows through the first voltage follower B1 to form a voltage V.sub.ptat_Buf, where the voltage V.sub.ptat_Buf and the bias voltage V.sub.ptat have the same magnitude and the same temperature coefficient. Similarly, the first voltage V.sub.be and a voltage Vbe_Buf also have the same voltage and the same temperature coefficient. Therefore, a difference between voltages on two input ends of the temperature coefficient adjustment unit 12 is:

[00003]$V_{\mathrm{total}}=V_{{\mathrm{ptat}}_{\mathrm{Buf}}}-V_{{\mathrm{be}}_{\mathrm{Buf}}}=V_{\mathrm{ptat}}-V_{\mathrm{be}}$

[0060] In FIG. 1, the first output value and the second output value are outputted by one or more registers. For example, the first output value corresponds to a temperature coefficient adjustment signal <0:X> (e.g., TRIM_TEMPC<0:X> in FIG. 1), the second output value corresponds to a voltage adjustment signal <0:Y> (e.g., TRIM_VREF0 <0:Y> in FIG. 1). An output signal of the reference voltage generation module is V.sub.REF (i.e., reference voltage V.sub.ref). The band gap reference unit 11 may be implemented using a bipolar junction transistor (BJT) (e.g., as shown in FIG. 2). The first voltage V.sub.be outputted by the band gap reference unit is a voltage between a base and an emitter of a bipolar transistor in the band gap reference unit 11 and is the third output signal of the band gap reference unit 11. The second output signal of the band gap reference unit 11 is the bias current I.sub.ref1, which is in direct proportion to the absolute temperature. The current flows through the bias resistor R to generate the bias voltage V.sub.ptat with a positive temperature coefficient.

[0061] Referring to FIG. 3, in the reference voltage generation module with an adjustable temperature coefficient in the present invention, a circuit structure of the temperature coefficient adjustment unit 12 includes: a first initial resistor R0, a first base resistor R.sub.base, at least voltage divider resistors R1, R2, . . . , and R(2.sup.n+1) configured corresponding to gating switches S1, S2, . . . , and S(2.sup.n+1) as shown. The gating switches are configured to selectively couple terminals of voltage divider resistors R1, R2, . . . , and R(2.sup.n+1) to the initial reference voltage V.sub.ref1. As an example, one end of the first initial resistor R0 is coupled to a terminal of bias voltage V.sub.ptat, the other terminal of resistor R0 is coupled to a terminal of base resistor R.sub.base through the voltage divider resistors R1, R2, . . . , and R(2.sup.n+1); the other terminal of base resistor R.sub.base is connected to a first voltage output end of the band gap reference unit 11. The first optional voltage divider resistors R1, R2, . . . , and R(2.sup.n+1) are connected to the initial reference voltage V.sub.ref1 by the corresponding gating switches S1, S2, . . . , and S(2.sup.n+1). For example, switching of the corresponding gating switches S1, S2, . . . , and S(2.sup.n−1) is controlled by using the first output value (e.g., TRIM_TEMPC<0:X>) of the external register, to change a voltage value of the initial reference voltage Vref1. As an example, register TRIM_TEMPC<0:X>includes 2.sup.n+1 control bits for switching the gating switches S1 through S(2.sup.n+1).

[0062] As shown in FIG. 3, there are 2.sup.n+1 first optional voltage divider resistors R1, R2, . . . , and R(2.sup.n+1) and 2.sup.n+1 first gating switches S1, S2, . . . , and S(2.sup.n+1). For example, when n=4, there are a total of 17 switches from S1 to S17. The first output value is outputted by the external register, for example, a signal TRIM_TEMPC<0:X> is 0001, so that the corresponding switch S1 is closed, and the first optional voltage divider resistors R1, R2, . . . , and R(2.sup.n+1) connected between the first initial resistor R0 and the first base resistor R.sub.base are connected to V.sub.ref1. For example, a ratio of the initial reference voltage V.sub.ref1 to the voltage of the temperature coefficient adjustment unit 12 and the temperature coefficient may be changed using temperature coefficient adjustment signal <0:X> (that is, the first output value), as expressed by the equations below:

[00004]$V_{\mathrm{ref}1}=\mathrm{Ratio}*V_{\mathrm{total}}+V_{\mathrm{be}}=\mathrm{Ratio}*\left(V_{\mathrm{ptat}}-V_{\mathrm{be}}\right)+V_{\mathrm{be}}$$T_c=\frac{{\mathrm{\Delta V}}_{\mathrm{ref}1}}{\Delta T}=\mathrm{Ratio}*\left(\frac{{\mathrm{\Delta V}}_{\mathrm{ptat}}}{\Delta T}-\frac{{\mathrm{\Delta V}}_{\mathrm{be}}}{\Delta T}\right)+\frac{{\mathrm{\Delta V}}_{\mathrm{be}}}{\Delta T}=\mathrm{Ratio}*\left(C_1-C_2\right)+C_2$

[0063] where Ratio is a coefficient variable that can be controlled and changed by the external register. As shown in FIG. 3, when the switch S1 is closed, a voltage ratio Ratio is:

[00005]$\mathrm{Ratio}=\frac{R_2+R_3+R_4+.Math.+R_{2^n+1}+R_{\mathrm{base}}}{R_0+R_1+R_2+.Math.+R_{2^n+1}+R_{\mathrm{base}}}=1-\frac{R_0+R_1}{R_0+R_1+R_2+.Math.+R_{2^n+1}+R_{\mathrm{base}}},n\ge 1$

[0064] where C1 is a positive temperature coefficient generated by the bias current Iref1, C2 is a negative temperature coefficient generated by Vbe, and Vbe is a constant related to a process, which is generally −1.5 mV/K.

[0065] Referring to FIG. 4, according to an exemplary reference voltage generation module with an adjustable temperature coefficient as explained above, voltage adjustment unit 13 includes an operational amplifier OP1, an adjustable feedback subunit Rx, and a feedback resistor R11. The in-phase input terminal of the first operational amplifier OP1 is connected to a second voltage output terminal V.sub.bg of band gap reference unit 11. The inverting input terminal of the first operational amplifier OP1 is connected to an output terminal of the first operational amplifier OP1 through a resistor RX, which is grounded via feedback resistor R11. The first operational amplifier OP1 outputs compensation voltage V.sub.ref0. The adjustable feedback subunit RX adjusts a resistance value of the adjustable feedback subunit RX according to the second output value (that is, TRIM_VREF0<0:Y>) of the external register, where V.sub.t=V.sub.bg, and V.sub.ref0=Vf/R11*(R11+Rx)=V.sub.bg*(R11+Rx)/R11.

[0066] The temperature coefficient of the second voltage V.sub.bg of the band gap reference unit 11 is 0. The second voltage V.sub.bg flows through voltage adjustment unit 13 and compensation voltage V.sub.ref0 with a temperature coefficient of 0 is outputted. The value of compensation voltage V.sub.ref0 may be changed by adjusting the size of the adjustable feedback subunit RX by using the second output value outputted by the register.

[0067] Referring to FIG. 4 and FIG. 5. In an embodiment, the adjustable feedback subunit RX includes a second initial resistor R0′, a second base resistor Rbase′, at least second optional voltage divider resistors R1′, R2′, . . . , and R′(2.sup.n−1) connected in series between the second initial resistor R0′ and the second base resistor Rbase′, and second gating switches S1′, S2′, . . . , and S′(2.sup.n−1) configured to short-circuit the corresponding second optional voltage divider resistors R1′, R2′, . . . , and R′(2.sup.n−1), where one end of the second initial resistor R0′ is connected to the output end of the first operational amplifier OP1, another end of the second initial resistor R0′ is sequentially connected to one end of the feedback resistor R11 and the inverting input end of the first operational amplifier OP1 by the second optional voltage divider resistors R1′, R2′, . . . , and R′(2.sup.n−1) and the second base resistor Rbase′, ends of the second optional voltage divider resistors R1′, R2′, . . . , and R′(2.sup.n−1) are connected to one end of the second base resistor Rbase′ by the second gating switches S1′, S2′, . . . , and S′(2.sup.n−1), and closing of the corresponding second gating switches S1′, S2′, . . . , and S′(2.sup.n−1) is controlled by using the second output value TRIM_VREF0<0:Y> of the external register, to change the resistance value of the feedback subunit by changing a quantity of second optional voltage divider resistors R1′, R2′, . . . , and R′(2.sup.n−1) that are short-circuited. For example, in FIG. 5, ST is closed, resistors from R2′ to R′(2.sup.n−1) are short-circuited. In this case, RX=R0′+R1′+Rbase′.

[0068] Referring to FIG. 1 and FIG. 6, voltage superimposing unit 14 includes a second operational amplifier OP2, two first positive feedback resistors R0″, a second positive feedback resistor R″, and two negative feedback resistors R1″. A non-inverting input terminal of the second operational amplifier OP2 is connected to an output terminal of the voltage adjustment unit 13 via resistor R0″ on the left, and is also connected to an output end of the temperature coefficient adjustment unit 12 via resistor R0″ on the right. The non-inverting input terminal of the second operational amplifier OP2 is grounded via the second positive feedback resistor R″. The inverting input end of the second operational amplifier OP2 is connected to an output terminal of the second operational amplifier OP2 via negative feedback resistor R1″ on the top, and it is grounded via negative feedback resistor R1″ at the bottom. As an example, the size and electrical properties of resistors R1 in FIG. 6 may be substantially matched, or in certainly implementation may be different.

[0069] The second operational amplifier OP2 outputs reference voltage V.sub.ref by superimposition through the voltage superimposing unit 14. For example, the final reference voltage V.sub.ref may be described be described by Equation 1 below:

V.sub.ref=V.sub.ref0+V.sub.ref1=V.sub.ref0+Ratio*(V.sub.ptat−V.sub.be)+V.sub.be   Equation 1:

[0070] The temperature coefficient of the reference voltage Vref may be described by Equation 1 below:

[00006]$\begin{array}{cc}{T}_{\mathrm{cyref}}=\frac{{\mathrm{\Delta V}}_{\mathrm{ref}}}{\Delta T}=0+\mathrm{Ratio}*\left(\frac{{\mathrm{\Delta V}}_{\mathrm{ptat}}}{\Delta T}-\frac{{\mathrm{\Delta V}}_{\mathrm{be}}}{\Delta T}\right)+\frac{{\mathrm{\Delta V}}_{\mathrm{be}}}{\Delta T}=\mathrm{Ratio}*\left(C_1-C_2\right)+C_1& \mathrm{Equation}2\end{array}$

[0071] To adjust the temperature coefficient, the temperature coefficient of the reference voltage V.sub.ref may be adjusted by adjusting the first output value of the register. When the outputted reference voltage V.sub.ref is also changed, the compensation voltage V.sub.ref0 with the temperature coefficient of 0 may be adjusted by adjusting the second output value of the register to compensate for the change of the outputted reference voltage V.sub.ref caused by adjustment of the temperature coefficient. The reference voltage V.sub.ref is outputted, and then voltage V.sub.REF is outputted through third voltage follower B3, where the voltage V.sub.REF and the reference voltage V.sub.ref share the same magnitude and the same temperature coefficient.

[0072] As shown in FIG. 6, the initial reference voltage V.sub.ref1 and the compensation voltage V.sub.ref0 are superimposed, to form a superimposed voltage V.sub.in for OP2, where the superimposed voltage is calculated by using the following formula:

[00007]$V_{\mathrm{in}}=\frac{V_{\mathrm{ref}0}+V_{\mathrm{ref}1}}{2},R^{\prime }▯R{0}^{″}$

[0073] Then, the voltage is then doubled once by the second operational amplifier OP2 to output V.sub.out:

[00008]$V_{\mathrm{out}}=\frac{R_1^{″}+R_1^{″}}{R_1^{″}}\times V_f=2\times V_{\mathrm{in}}=2\times \frac{V_{\mathrm{ref}0}+V_{\mathrm{ref}1}}{2}=V_{\mathrm{ref}0}+V_{\mathrm{ref}1}.$

[0074] The reference voltage generation module 1 may be implemented as a part of a power supply apparatus with an adjustable temperature coefficient. Referring to FIG. 7, the power supply apparatus with an adjustable temperature coefficient includes reference voltage generation module 1, charge pump 2, first voltage feedback resistor R01, second voltage feedback resistor R02, and comparator CMP. The reference voltage generation module 1 is configured to adjust a temperature coefficient of an output voltage thereof, compensate the voltage difference generated due to adjustment of the temperature coefficient, and provide output a reference voltage VREF

[0075] A non-inverting input end of the comparator CMP is connected to the reference voltage VRER, and the inverting input end of the comparator CMP is grounded by the first voltage feedback resistor R01 and is connected to an output end of the charge pump 2 by the second voltage feedback resistor R02, an output end of the comparator CMP is used as an input end of the charge pump 2, and the output end of the charge pump 2 is used as an output end of the power supply apparatus.

[0076] In FIG. 7, TRIM_TEMPC<0:X> and TRIM_VREF0 <0:Y> may be configured as a first output value and a second output value of a register. The two values may be outputted by the same register or may be respectively outputted by two registers. The first output value is inputted into the reference voltage generation module 1 for adjusting the temperature coefficient of the voltage V.sub.REF outputted by the module, and the second output value may be used for compensating a change in the reference voltage VREF. The reference voltage VREF passes through the comparator CMP and reaches the inverting input end of the comparator CMP with a feedback voltage VFB of a finally outputted voltage HVOUT, the reference voltage and the feedback voltage are compared by the comparator CMP, and the feedback voltage is clamped to the reference voltage BREF, so that the charge pump 2 generates a high voltage enough to drive the photoelectric detector array 3 (SPAD) to enter an avalanche point.

[0077] The voltage outputted by charge pump 2 may be described by the equation below:

[00009]$\mathrm{HVOUT}=\frac{R01+R02}{R01}*V_{\mathrm{REF}}$

[0078] The voltage HVOUT outputted by the charger pump 2 according to Equation 1 above may be modified to:

[00010]$\mathrm{HVOUT}=\frac{R01+R02}{R01}*V_{\mathrm{REF}}=\frac{R01+R02}{R01}*\left(V_{\mathrm{ref}0}+\mathrm{Ratio}*\left(V_{\mathrm{ptat}}-V_{\mathrm{be}}\right)+V_{\mathrm{be}}\right)$

[0079] A temperature coefficient of the voltage outputted by the charger pump 2 according to Equation 2 above may further be modified as:

[00011]$T_{c\_\mathrm{hvout}}=\frac{\Delta \mathrm{HVOUT}}{\Delta T}=\frac{R01+R02}{R01}*\left[0+\mathrm{Ratio}*\left(\frac{{\mathrm{\Delta V}}_{\mathrm{ptat}}}{\Delta T}-\frac{{\mathrm{\Delta V}}_{\mathrm{be}}}{\Delta T}\right)+\frac{{\mathrm{\Delta V}}_{\mathrm{be}}}{\Delta T}\right]=\frac{R01+R01}{R01}\left[\mathrm{Ratio}*\left(C_1-C_2\right)+C_2\right]$

[0080] where Ratio is a coefficient variable that can be controlled and changed by using the first output value of the register, C1 is a positive temperature coefficient generated by a bias current, and C2 is a negative temperature coefficient generated by a first voltage V.sub.be, where V.sub.be is a constant related to a process, which is generally −1.5 mV/K.

[0081] In the present invention, a reference voltage V.sub.REF is outputted by using the reference voltage generation module, the reference voltage V.sub.REF clamps a feedback voltage of the charge pump 2 through the comparator CMP to a voltage that is equal to the reference voltage, and an output voltage of the charge pump 2 is linearly proportional to the reference voltage through the first voltage feedback resistor R01 and the second voltage feedback resistor R02.

[0082] Optionally, the reference voltage outputted by the reference voltage generation module may be formed by superimposing one or more adjustable voltages (that is, the second voltage V.sub.bg) with a temperature coefficient of 0 and one or more adjustable voltages (that is, the first voltage V.sub.be) with temperature coefficients being nonzero.

[0083] In certain implementations, the reference voltage outputted by the reference voltage generation module may alternatively be formed by subtracting zero or one or more voltages with a negative temperature coefficient from one or more voltages with a positive temperature coefficient.

[0084] According to some embodiments, a temperature coefficient of a voltage outputted by the charge pump 2 corresponds to a temperature coefficient of a photoelectric detector array 3 (for example, a SPAD array or a single SPAD), and the temperature coefficient of the photoelectric detector array is adjustable, to resolve a problem that the photoelectric detector array (for example, the SPAD) is triggered by mistake or a light sensing capability is reduced as temperature changes.

[0085] Based on the reference voltage generation module and the power supply apparatus, the present invention further provides a laser ranging chip, including at least one photoelectric detector array and a power supply apparatus, where a negative electrode of the photoelectric detector array is connected to an output end of the power supply apparatus, and a positive electrode of the photoelectric detector array is grounded. When there are two or more photoelectric detector arrays, the photoelectric detector arrays are connected in parallel, and the power supply apparatus supplies power to the photoelectric detector arrays. Because the reference voltage generation module and the power supply apparatus are described above in detail, details are not described herein again.

[0086] Based on the foregoing, in the present invention, a positive temperature coefficient is provided for a charge pump to output a voltage, so that the voltage changes with temperature. When the voltage is loaded on a photoelectric detector array, the voltage may be a voltage when the photoelectric detector array breaks down a critical state, to greatly improve stability, a light sensing capability, and a detection effect of a sensor during the change of the temperature. In addition, a compensation voltage can further be outputted by using a voltage adjustment unit, to compensate for a change of a reference voltage caused by adjustment of the temperature coefficient, so that the voltage outputted by the reference voltage generation module is accurately controlled at the voltage when the photoelectric detector array breaks down the critical state.

[0087] It may be understood that a person of ordinary skill in the art may make equivalent replacement or modifications according to the technical solution and the inventive concept of the present invention, and all of the replacement or modifications should all fall within the protection scope of the attached claims of the present invention.

[0088] While the above is a full description of the specific embodiments, various modifications, alternative constructions and equivalents may be used. Therefore, the above description and illustrations should not be taken as limiting the scope of the present invention which is defined by the appended claims.