LUMINESCENT DIAMOND MATERIAL AND METHOD OF PRODUCING THE SAME
20190322930 ยท 2019-10-24
Inventors
Cpc classification
C01P2004/61
CHEMISTRY; METALLURGY
H05B33/18
ELECTRICITY
C01P2004/62
CHEMISTRY; METALLURGY
C01P2006/60
CHEMISTRY; METALLURGY
H05B33/10
ELECTRICITY
B01J3/065
PERFORMING OPERATIONS; TRANSPORTING
International classification
Abstract
Provided are a luminescent diamond material and method of producing the same. The method may include the steps of providing a catalyst selected from one or more of the group of cobalt, iron, manganese and nickel; providing an enhancer selected from one or more of the group of boron, germanium, phosphorous, silicon and tin; providing graphite; blending the catalyst, enhancer and graphite to form a homogenized blend; and subjecting the homogenized blend to a high temperature, high pressure process to form a luminescent diamond material having a plurality of diamond particles having a plurality of defect centers, wherein the luminescent diamond material luminesces at a wavelength of about 700 nm to about 950 nm and energy of about 1.77 eV to about 1.30 eV.
Claims
1. A luminescent diamond material comprising a plurality of diamond particles having at least one defect center that luminesces at a wavelength of about 700 nm to about 950 nm and energy of about 1.77 eV to about 1.30 eV.
2. The luminescent diamond material of claim 1, wherein the at least one defect center luminesces at a wavelength of about 800 nm to about 900 nm and energy of about 1.55 eV to about 1.38 eV.
3. The luminescent diamond material of claim 1, wherein the at least one defect center luminesces at a wavelength of about 775 nm to about 925 nm and energy of about 1.60 eV to about 1.34 eV.
4. The luminescent diamond material of claim 1, wherein the at least one defect center that luminesces at a peak wavelength of about 880 nm to about 890 nm and energy of about 1.41 eV to about 1.39 eV.
5. The luminescent diamond material of claim 1, wherein the at least one defect center photoluminesces when excited with a visible, ultraviolet, or infrared light.
6. The luminescent diamond material of claim 1, further comprising a luminescent enhancer.
7. The luminescent diamond material of claim 6, wherein the luminescent enhancer is selected from at least one of boron, germanium, phosphorus, silicon and tin.
8. The luminescent diamond material of claim 6, wherein the at least one defect center is selected from at least one of cobalt, germanium, nickel, nitrogen and silicon.
9. The luminescent diamond material of claim 1, wherein the diamond particles have a size less than about 100 nm.
10. The luminescent diamond material of claim 1, wherein the diamond particles have a size of about 1 nm to about 20 nm.
11. The luminescent diamond material of claim 1, wherein the diamond particles have a size of about 20 nm to about 100 nm.
12. The luminescent diamond material of claim 1, wherein the diamond particles have a size of about 0.1 m to about 1 m.
13. The luminescent diamond material of claim 1, wherein the diamond particles have a size of about 500 nm to about 30 m.
14. The luminescent diamond material of claim 1, wherein the diamond particles have a size of about 10 m to about 100 m.
15. The luminescent diamond material of claim 1, wherein the diamond particles have a plurality of defect centers, wherein the concentration of the defect centers is more than about 8 ppm.
16. The luminescent diamond material of claim 1, wherein the material is made from a composition of material that includes a catalyst composition selected from one or more of the group of cobalt, iron, manganese and nickel, and an enhancer selected from one or more of the group of boron, germanium, phosphorous, silicon and tin.
17. The luminescent diamond material of claim 1, wherein the material is luminescent nanodiamond.
18. A luminescent diamond material comprising a plurality of diamond particles having a first defect center that luminesces at a peak wavelength of about 880 nm to about 890 nm and energy of about 1.41 eV to about 1.39 eV and a second defect center that luminesces at peak wavelength of about 510 nm to about 520 nm and energy of about 2.43 eV to about 2.38 eV.
19. A method of producing a luminescent diamond material comprising the steps of: providing a catalyst selected from one or more of the group of cobalt, iron, manganese and nickel; providing an enhancer selected from one or more of the group of boron, germanium, phosphorous, silicon and tin; providing graphite; blending the catalyst, enhancer, and graphite to form a homogenized blend and pressing the homogenized blend into a solid compact; and subjecting the solid compact to a high temperature, high pressure process to form a luminescent diamond material having a plurality of diamond particles having a plurality of defect centers, wherein the luminescent diamond material luminesces at about 700 nm to about 950 nm and energy of about 1.77 eV to about 1.30 eV.
20. The method of claim 19, wherein the plurality of defect centers luminesces at a wavelength of about 800 nm to about 900 nm and energy of about 1.55 eV to about 1.38 eV.
21. The method of claim 19, wherein the plurality of defect centers luminesces at a wavelength of about 775 nm to about 925 nm and energy of about 1.60 eV to about 1.34 eV.
22. The method of claim 19, wherein the plurality of defect centers photoluminesces when excited with a ultraviolet, visible or infrared light
23. The method of claim 19, wherein the diamond particles have a size less than about 100 nm.
24. The method of claim 19, wherein the diamond particles have a size of about 1 nm to about 20 nm.
25. The method of claim 19, wherein the diamond particles have a size of about 20 nm to about 100 nm.
26. The method of claim 19, wherein the diamond particles have a size of about 0.1 m to about 1 m.
27. The method of claim 19, wherein the diamond particles have a size of about 500 nm to about 30 m.
28. The method of claim 19, wherein the diamond particles have a size of about 10 m to 100 m.
29. The method of claim 19, wherein the concentration of the defect centers is more than about 8 ppm.
30. The method of claim 19, wherein the catalyst, enhancer, and graphite are powders and the step of blending comprises blending the powders together to form a homogenized powder blend.
31. The method of claim 30, wherein the blended powder is pressed into a solid compact.
32. The method of claim 30, wherein the solid compact is subjected to a pressure of about 4.5 GPa to about 8 GPa and a temperature of about 1200 C. to about 2300 C.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0029] Before the present materials, compositions, methods are described, it is to be understood that this disclosure is not limited to the particular methodologies, systems and materials described, as these may vary. It is also to be understood that the terminology used in the description is for the purpose of describing the particular versions or embodiments only, and is not intended to limit the scope. For example, as used herein, the singular forms a, an, and the include plural references unless the context clearly dictates otherwise. In addition, the word comprising as used herein is intended to mean including but not limited to; however, it will be understood by one of skill in the art, that in some instances, an embodiment can alternatively be described using the language consisting essentially of or consisting of. Unless defined otherwise, all technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art.
[0030] Unless otherwise indicated, all numbers expressing quantities of ingredients, properties such as size, weight, reaction conditions and so forth used in the specification and claims are to be understood as being modified in all instances by the term about. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the following specification and attached claims are approximations that may vary depending upon the desired properties sought to be obtained by the invention. At the very least, and not as an attempt to limit the application of the doctrine of equivalents to the scope of the claims, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.
[0031] As used herein, the term about means plus or minus 10% of the numerical value of the number with which it is being used. Therefore, about 50% means in the range of 45%-55%. When the term, luminesce(s) is used it should be understood to encompass photolumineses, fluorescence and/or any other illumination due to excitation from various energy sources, including light, but not limited to the latter.
[0032] As used herein the term luminescent nano-diamond material means diamond particles having a mean size of less than 100 nm (nano-size) and containing defects within the crystalline structure that luminesces when excited by certain wavelengths of energy.
[0033] As used herein the term vacancy means a defect caused by an atom missing from a lattice structure. NV means a nitrogen vacancy center. SiV refers to a silicon vacancy center. The nickel defect center has been referred to as an NIRIM2 center in prior art (https://doi.org/10.1103/PhysRevB.70.245206 and PHYSICAL REVIEW B VOLUME 42, NUMBER 16 1 Dec. 1990, p 9843).
[0034] As used herein the term enhancer means an element introduced into the crystal lattice during the growth process that has been shown to increase the bulk fluorescence of the diamond crystal.
[0035] Luminescent diamond material or particles have numerous uses for biomedical imaging, for example, as contrast agents for in-vitro and in vivo analyses, diagnostic, drug discovery and R&D. The diamond surface can be functionalized for drug deliveryattaching drugs/compounds to diamond surface to target specific sites, Also, the luminescent diamond can be used as quantum dots for potential use in quantum computing.
[0036] Diamond is ideal for biomedical applications due to its biocompatibility and vacancy centers that fluoresce or luminesce, such luminescence being stable over long time periods.
[0037] These characteristics are caused by vacancies or point defects in the crystal lattice. The vacancies or defects are introduced by irradiating the diamond, for example, by an electron beam, to generate a lattice defect. As will be described further herein, the lattice defect can be combined with different elements to cause the diamond to luminesce.
[0038] One way to increase luminescence of the diamond and reduce the cost is to press the diamond in a manner that can grow the diamonds at a faster growth rate at a higher temperature. Higher growth temperature will result in increased concentration of vacancies, which will then migrate and combine with the atoms of the elements to form, for example, the NV and SiV. Such diamond will have higher fluorescence out of the press.
[0039] As will be disclosed further herein the high pressure and high temperature (HPHT) process HPHT method is used to grow large quantity of micron and/or mesh diamond particles/crystals that can further be processed to produce nanosize diamond crystals. Furthermore, certain catalyst compositions and process conditions identified herein, significantly increase the fluorescence intensity of the resulting diamond crystals over the fluorescence of diamond crystals produced using catalyst compositions and known process conditions.
[0040]
[0041] Luminescent diamond material with bright infra-red fluorescence can be used in (i) biomedical applications as deep tissue tracers of biomolecules, (ii) anti-counterfeiting as covert and concealed features. The combination of two sharp emission peaks (green at 514 nm and infra-red at 885 nm) in the same diamond population, makes the diamond crystals described here ideal for use as photostable (non-bleaching) fluorescence calibration standards that span the green to the infra-red light range.
[0042] Referring again to
[0048] Steps 10-18 describe the process to produce the catalyst/graphite/seed diamond cores that will be subject to the HTHP process. In step 10, a catalyst selected from at least one of the group of cobalt, iron, manganese and nickel is provided. The catalyst enables the transformation of graphite to diamond under high pressure and temperature conditions.
[0049] In step 12, additional components selected from one or more of the group of boron, germanium, phosphorous, silicon and tin is provided that may act as a luminescent enhancer. It is thought that atoms from one or more of the enhancer elements may become trapped within the diamond lattice in the proximity of the defect center. This phenomenon may alter the electronic state of the defect center such that it increases its luminescence.
[0050] In step 16, graphite powder is provided. Graphite is the source of carbon from which the diamond is formed. The catalyst, enhancer and graphite are blended to form a homogenized blend. The catalyst, enhancer and graphite can be powders that are blended together to form a homogenized powder blend.
[0051] The powder blend can be pressed into a solid compact and then subjected to the HPHT process.
[0052] The HTHP process is described in reference to step 20, wherein the homogenized and compacted blend is subjected to a high temperature, high pressure process to form a luminescent diamond material having a plurality of diamond particles having a plurality of defect centers, wherein the luminescent diamond material luminesces at a wavelength of about 700 nm to about 950 nm or about 1.77 eV to about 1.30 eV.
[0053] The above method includes simultaneously converting graphite to diamond and incorporating defect centers into the diamond in such a way which causes the material to luminesce. The mixture, once pressed in the form of the dense compact can be subjected to HPHT treatment at pressures in excess of 3 GPa and temperatures in excess of 1000 C. For example, a pressure of about 4.5 GPa to about 8 GPa and a temperature of about 1200 C. to about 2300 C.
[0054] Thus, during the HPHT process, the graphite will convert to diamond which may simultaneously incorporate defects. The concentration of defects may be controlled by varying the blend composition. It may be possible to grow diamond with multiple defects.
[0055] The luminescent diamond material is made from a composition of material that optionally includes a catalyst composition selected from one or more of the group of cobalt, iron, manganese and nickel; an enhancer selected from one or more of the group of boron, germanium, phosphorous, silicon and tin.
[0056] The luminescent diamond material can be made of a composition of material including in wt % of about 50 to about 70 of the catalyst, of about 2 to about 20 of the enhancer, and of about 20 to about 40 of graphite powder. More specifically, of about 50 to about 70 nickel, of about 3 to about 20 enhancer, and of about 20 to about 40 graphite.
[0057] The nitrogen vacancy center NV of
[0058] The silicon vacancy center shown in
[0059] The resulting luminescent material includes a plurality of diamond particles having at least one defect center that luminesces at about 700 nm to about 950 nm or about 1.77 to about 1.30 eV. The presence of the defect centers have been verified using photoluminescence spectroscopy as shown in
[0060] When at least one of these defect centers is excited with a visible, UV, or infrared light it photolumineses and with spectroscopy data collected at room temperature, it is shown that the at least one defect center luminesces at about 800 nm to about 900 nm, at about 775 nm to about 925 nm and/or at about 880 nm to about 890 nm.
[0061] Further, when the luminescent diamond of Example 1 is excited with a blue light source of 450 nm, a 514 nm peak is observed as shown in
[0062] In another embodiment it has been shown that it is possible to manipulate the relative intensity of the 885 nm peak and the 514 nm peak within the luminescent diamond. For example, as shown in
[0063] The resulting luminescent diamond material can be processed into a luminescent nanodiamond having diamond particles less than of about 100 nm using methods known in the industry. The diamond particles can have a size of about 1 nm to about 20 nm; of about 20 nm to about 100 nm; of about 0.1 m to about 1 m; of about 500 nm to about 30 m; and/or about 10 m to about 100 m. It should be appreciated that other nanosize particles are contemplated.
[0064] Due to the above, the density or concentration of the defect centers is increased, as described further herein, to more than about 8 ppm.
[0065] Accordingly, the method of the present disclosure is a process for making fluorescent diamonds. The technique can make fluorescent diamonds which fluoresce in the infrared region of the electromagnetic spectrum. This method has also been used to make luminescent diamond in large-scale quantities on the order of 8 grams per pressed run.
[0066] Another benefit of the method of producing the luminescent diamond of this invention as set forth supra, is that no irradiation is necessary for creating the defect centers.
[0067] The present subject matter being thus described, it will be apparent that the same may be modified or varied in many ways. Such modifications and variations are not to be regarded as a departure from the spirit and scope of the present subject matter, and all such modifications and variations are intended to be included within the scope of the following claims.