Plating solution using ammonium salt

Abstract

A plating solution including a soluble salt containing at least a stannous salt; an acid selected from organic acid and inorganic acid or a salt thereof; and an additive containing a specific ammonium salt is provided.

Claims

1. A plating solution comprising: (A) a soluble salt containing at least a stannous salt; (B) an acid selected from organic acid and inorganic acid or a salt of the acid; and (C) an additive, wherein the additive comprises a ammonium salt represented by a general formula (1) below, ##STR00013## wherein, in the formula (1), R.sub.1 indicates C.sub.nH.sub.2n+1, n being an integer of 10 to 16, R.sub.2 and R.sub.3 are identical or different, and indicate C.sub.nH.sub.2n+1, n being an integer of 1 to 2, X represents a halogen, and Y represents (CH.sub.2CH.sub.2O).sub.2.

2. The plating solution according to claim 1, wherein the additive further comprises a nonionic surfactant represented by a general formula (2) below,
R.sub.3Y.sub.1ZY.sub.2R.sub.4(2) and wherein, in the formula (2), R.sub.3 and R.sub.4 is the group represented by the formula (A) below,
(C.sub.nH.sub.2nO).sub.mH(A) and wherein, Y.sub.1 and Y.sub.2 represent a single bond or a group selected from O, COO and CONH; and Z represents a benzene ring or 2,2-diphenylpropane, and in the formula (A), n indicates 2 or 3 and m indicates an integer from 1 to 15.

3. The plating solution according to claim 1, further comprising an additional additive of a complexing agent, a brightener, or an antioxidant.

4. The plating solution according to claim 2, further comprising an additional additive of a complexing agent, a brightener, or an antioxidant.

5. The plating solution according to claim 1, wherein the amount of the ammonium salt in the plating solution is 0.5 to 10 g/L.

6. The plating solution according to claim 1, wherein the amount of the ammonium salt in the plating solution is 1 to 10 g/L.

7. The plating solution according to claim 1, wherein the amount of the soluble salt containing at least a stannous salt in the plating solution is 30 to 100 g/L.

8. The plating solution according to claim 1, wherein the amount of the inorganic acid, the organic acid or the salt thereof (B) in the plating solution is 80 to 300 g/L.

9. The plating solution according to claim 1, consisting essentially of: (A) a soluble salt containing at least a stannous salt; (B) an acid selected from organic acid and inorganic acid or a salt of the acid; and (C) an additive, wherein the additive consists essentially of: (i) a ammonium salt represented by a general formula (1) below, (ii) a nonionic surfactant represented by a general formula (2) below, and (iii) an additional additive of a complexing agent, a brightener, or an antioxidant, ##STR00014## wherein, in the formula (1), R.sub.1 indicates C.sub.nH.sub.2n+1, n being an integer of 10 to 16, R.sub.2 and R.sub.3 are identical or different, and indicate C.sub.nH.sub.2n+1, n being an integer of 1 to 2, X represents a halogen, and Y represents (CH.sub.2CH.sub.2O).sub.2,
R.sub.3Y.sub.1ZY.sub.2R.sub.4(2) and wherein, in the formula (2), R.sub.3 and R.sub.4 is the group represented by the formula (A) below,
(C.sub.nH.sub.2nO).sub.mH(A) and wherein, Y.sub.1 and Y.sub.2 represent a single bond or a group selected from O, COO and CONH; and Z represents a benzene ring or 2,2-diphenylpropane, and in the formula (A), n indicates 2 or 3 and m indicates an integer from 1 to 15.

10. The plating solution according to claim 1, consisting of: (A) a soluble salt containing at least a stannous salt; (B) an acid selected from organic acid and inorganic acid or a salt of the acid; and (C) an additive, wherein the additive consists of: (i) a ammonium salt represented by a general formula (1) below, (ii) a nonionic surfactant represented by a general formula (2) below, and (iii) an additional additive of a complexing agent, a brightener, or an antioxidant, ##STR00015## wherein, in the formula (1), R.sub.1 indicates C.sub.nH.sub.2n+1, n being an integer of 10 to 16, R.sub.2 and R.sub.3 are identical or different, and indicate C.sub.nH.sub.2n+1, n being an integer of 1 to 2, X represents a halogen, and Y represents (CH.sub.2CH.sub.2O).sub.2,
R.sub.3Y.sub.1ZY.sub.2R.sub.4(2) and wherein, in the formula (2), R.sub.3 and R.sub.4 is the group represented by the formula (A) below,
(C.sub.nH.sub.2nO).sub.mH(A) and wherein, Y.sub.1 and Y.sub.2 represent a single bond or a group selected from O, COO and CONH; and Z represents a benzene ring or 2,2-diphenylpropane, and in the formula (A), n indicates 2 or 3 and m indicates an integer from 1 to 15.

Description

DESCRIPTION OF EMBODIMENTS

(1) Next, embodiments for carrying out the present invention are described below.

(2) The plating solution of the first aspect of the present invention (hereinafter referred as the plating solution of the present invention) is a plating solution for tin or tin alloy, and includes: (A) a soluble salt containing at least a stannous salt; (B) an acid selected from organic acid and inorganic acid or a salt of the acid; and (C) an additive. The additive includes a specific ammonium salt represented by a general formula (1) below. The soluble salt is made of any one of: the stannous salt; and the mixture of the stannous salt and a metal salt selected from the group consisting of silver, copper, bismuth, nickel, antimony, indium, and zinc.

(3) ##STR00002##

(4) In the formula (1), R.sub.1 indicates C.sub.nH.sub.2n+1, n being an integer of 8 to 16, R.sub.2 and R.sub.3 are identical or different, and indicate C.sub.nH.sub.2n+1, n being an integer of 1 to 2, X represents a halogen, and Y represents (CH.sub.2CH.sub.2O).sub.n, n being an integer of 1 to 2.

(5) The tin alloy included in the plating solution of the present invention is an alloy of: tin; and a predetermined metal selected from silver, copper, bismuth, nickel, antimony, indium and zinc. Examples thereof include: binary alloys such as the tin-silver alloy, the tin-copper alloy, the tin-bismuth alloy, the tin-nickel alloy, the tin-antimony alloy, the tin-indium alloy, and the tin-zinc alloy; and ternary alloy such as the tin-copper-bismuth, the tin-copper-silver alloy and the like.

(6) Thus, the soluble salt (A) included in the plating solution of the present invention can be any soluble salt that forms varieties of metal ions such as Sn.sup.2+, Ag.sup.+, Cu.sup.+, Cu.sup.2+, Bi.sup.3+, Ni.sup.2+, Sb.sup.3+, In.sup.3+, Zn.sup.2+ in the plating solution. For example, it includes: an oxide and a halide of the metal; and a salt formed between an inorganic acid or an organic acid and one of the above-described metals.

(7) Examples of the metal oxide include stannous oxide, copper oxide, nickel oxide, bismuth oxide, antimony oxide, indium oxide, zinc oxide and the like, and examples of the metal halide include stannous chloride, bismuth chloride, bromide Bismuth, cuprous chloride, cupric chloride, nickel chloride, antimony chloride, indium chloride, zinc chloride and the like.

(8) Examples of the metal salt with the inorganic acid or an organic acid include copper sulfate, stannous sulfate, bismuth sulfate, nickel sulfate, antimony sulfate, bismuth nitrate, silver nitrate, copper nitrate, antimony nitrate, indium nitrate, nickel nitrate, zinc nitrate, copper acetate, nickel acetate, nickel carbonate, sodium stannate, stannous fluoroborate, stannous methanesulfonate, silver methanesulfonate, copper methanesulfonate, bismuth methanesulfonate, nickel methanesulfonate, indium metasulfonate, bismethane zinc sulfonate, stannous ethanesulfonate, bismuth 2-hydroxypropanesulfonate, and the like.

(9) The acid or the salt thereof (B) included in the plating solution of the present invention is selected from organic acid and inorganic acid, or the salt of one of these acids. Examples of the organic acid include: organic sulfonic acids such as alkanesulfonic acid, alkanol sulfonic acid and aromatic sulfonic acid; and aliphatic carboxylic acids. Examples of the inorganic acids include: borofluoric acid, hydrosilicofluoric acid, sulfamic acid, hydrochloric acid, sulfuric acid, nitric acid, perchloric acid and the like. The salt includes: a salt of an alkali metal, a salt of an alkaline earth metal, an ammonium salt, an amine salt, a sulfonate and the like. The component (B) is preferably an organic sulfonic acid from the viewpoint of the solubility of the metal salt and ease of wastewater treatment.

(10) As the alkanesulfonic acid, those represented by the chemical formula C.sub.nH.sub.n+1SO.sub.3H (for example, n=1 to 5, preferably 1 to 3) can be used. Specifically, examples thereof include methanesulfonic acid, ethanesulfonic acid, 1-propanesulfonic acid, 2-propanesulfonic acid, 1-butanesulfonic acid, 2-butanesulfonic acid, pentanesulfonic acid and the like, as well as hexanesulfonic acid, decanesulfonic acid, dodecanesulfonic acid and the like.

(11) As the alkanol sulfonic acid, those represented by the chemical formula C.sub.mH.sub.2m+1CH(OH)C.sub.pH.sub.2pSO.sub.3H (for example, m=0 to 6, p=1 to 5) can be used. Specifically, examples thereof include 2-hydroxyethane-1-sulfonic acid, 2-hydroxypropane-1-sulfonic acid, 2-hydroxybutane-1-sulfonic acid, 2-hydroxypentane-1-sulfonic acid, as well as 1-hydroxypropane-2-sulfonic acid, 3-hydroxypropane-1-sulfonic acid, 4-hydroxybutane-1-sulfonic acid, 2-hydroxyhexane-1-sulfonic acid, 2-hydroxydecane-1-sulfonic acid, 2-hydroxydodecane-1-sulfonic acid and the like.

(12) Basically, the above-mentioned aromatic sulfonic acid is benzenesulfonic acid, alkylbenzenesulfonic acid, phenolsulfonic acid, naphthalenesulfonic acid, alkylnaphthalenesulfonic acid and the like. Specifically, examples thereof include 1-naphthalenesulfonic acid, 2-naphthalenesulfonic acid, toluenesulfonic acid, xylene sulfonic acid, p-phenolsulfonic acid, cresolsulfonic acid, sulfosalicylic acid, nitrobenzene sulfonic acid, sulfobenzoic acid, diphenylamine-4-sulfonic acid and the like.

(13) Examples of the aliphatic carboxylic acid include acetic acid, propionic acid, butyric acid, citric acid, tartaric acid, gluconic acid, sulfosuccinic acid, trifluoroacetic acid and the like.

(14) The ammonium salt included in the additive (C) included in the plating solution of the present invention is represented by the following general formula (1) as described above.

(15) ##STR00003##

(16) In the formula (1), R.sub.1 indicates C.sub.nH.sub.2n+1, n being an integer of 8 to 16, R.sub.2 and R.sub.3 are identical or different, and indicate C.sub.nH.sub.2n+1, n being an integer of 1 to 2, X represents a halogen, and Y represents (CH.sub.2CH.sub.2O).sub.n, n being an integer of 1 to 2.

(17) Specific examples of the ammonium salt included in the plating solution of the present invention are as follows.

(18) (i) The ammonium salt 1 is N,N-dimethyl-N-[2-[2-[[4-(1,1,3,3-tetramethylbutyl)phenyl]oxy]ethoxy]ethyl]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.8H.sub.17 (n=8), R.sub.2 and R.sub.3 are CH.sub.3. X is chlorine Y represents (CH.sub.2CH.sub.2O).sub.2. The ammonium salt 1 is represented by the formula below.

(19) ##STR00004##

(20) (ii) The ammonium salt 2 is N,N-dimethyl-N-[2-[2-[[4-(tetradecyl)phenyl]oxy]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.14H.sub.29 (n=14), R.sub.2 and R.sub.3 are CH.sub.3. X is chlorine and Y represents CH.sub.2CH.sub.2O. The ammonium salt 2 is represented by the formula below.

(21) ##STR00005##

(22) (iii) The ammonium salt 3 is N,N-dimethyl-N-[2-[2-[[4-(1,1,3,3-tetramethyloctyl)phenyl]oxy]ethoxy]ethyl]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.16H.sub.33 (n=16), R.sub.2 and R.sub.3 are CH.sub.3, X is chlorine, Y represents (CH.sub.2CH.sub.2O).sub.2. The ammonium salt 3 is represented by the formula below.

(23) ##STR00006##

(24) (iv) The ammonium salt 4 is N,N-dimethyl-N-[2-[2-[[4-(1,1,3,3-tetramethylhexyl)phenyl]oxy]ethoxy]ethyl]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.12H.sub.25 (n=12), R.sub.2 and R.sub.3 are CH.sub.3, X is bromine, and Y represents (CH.sub.2CH.sub.2O).sub.2. The ammonium salt 4 is represented by the formula below.

(25) ##STR00007##

(26) (v) The ammonium salt 5 is N,N-diethyl-N-[2-[2-[[4-(tetrahexyl)phenyl]oxy]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.10H.sub.21 (n=10), R.sub.2 and R.sub.3 are C.sub.2H.sub.5, X is chlorine and Y represents (CH.sub.2CH.sub.2O).sub.2. The ammonium salt 5 is represented by the formula below.

(27) ##STR00008##

(28) (vi) The ammonium salt 6 is N,N-dimethyl-N-[2-[2-[[4-tetrabutylphenyl]oxy]ethoxy]ethyl]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.4H.sub.9 (n=4), R.sub.2 and R.sub.3 are CH.sub.3, X is chlorine and Y represents (CH.sub.2CH.sub.2O).sub.2. The ammonium salt 6 is represented by the formula below.

(29) ##STR00009##

(30) (vii) The ammonium salt 7 is N,N-dimethyl-N-[2-[2-[[4-(1,1,3,3-tetramethyloctyl)phenyl]oxy]ethoxy]ethyl]benzenemethanaminium. In the above formula (1), the substituent R.sub.1 is C.sub.20H.sub.41 (n=20), R.sub.2 and R.sub.3 are CH.sub.3, X is chlorine, Y represents (CH.sub.2CH.sub.2O).sub.2. The ammonium salt 7 is represented by the formula below.

(31) ##STR00010##

(32) The plating solution of the present invention preferably further includes a nonionic surfactant represented by the following formula (2) as another additive.

(33) [Chemical formula 13]
R.sub.3Y.sub.1ZY.sub.2R.sub.4(2)

(34) In the formula (2), R.sub.3 and R.sub.4 are groups represented by the following formula (A). Y.sub.1 and Y.sub.2 are groups selected from: a single bond; and a group selected from O, COO and CONH. Z represents a benzene ring or 2,2-diphenylpropane. In formula (A), n is 2 or 3. m is an integer of 1 to 15.

(35) [Chemical formula 14]
(C.sub.nH.sub.2nO).sub.mH(A)

(36) Specific examples of the nonionic surfactant represented by formula (2) included in the plating solution of the present invention are as follows. The nonionic surfactant 1 represented by the formula (2) is polyoxyethylene bisphenol ether. In the above formula (2), the substituent R.sub.3 is H(CH.sub.2CH.sub.2O).sub.p (p is an integer of 2 to 10), Y.sub.1 is O, Z is (C.sub.6H)C.sub.3H.sub.4(C.sub.6H.sub.10), Y.sub.2 is O. R.sub.4 is H(CH.sub.2CH.sub.2O).sub.p (p is an integer from 2 to 10) and is represented by the following formula.

(37) ##STR00011##

(38) The nonionic surfactant 2 represented by the formula (2) is polyoxyethylene phenyl ether. In the above formula (2), the substituent R.sub.3 is H(CH.sub.2CH.sub.2O).sub.q (q is an integer of 2 to 15). Y.sub.1 is O. Z is C.sub.6H.sub.10, Y.sub.2 is a single bond, R.sub.4 is CH.sub.2CH.sub.2OH, and is represented by the following formula.

(39) ##STR00012##

(40) The plating solution of the present invention preferably further includes, as other additives, a surfactant, a complexing agent and/or an antioxidant other than the above.

(41) Other surfactants in this case include ordinary anionic surfactants, cationic surfactants, nonionic surfactants and amphoteric surfactants.

(42) Examples of the anionic surfactant include: polyoxyalkylene alkyl ether sulfates such as polyoxyethylene (containing 12 mol of ethylene oxide) nonyl ether sodium sulfate; polyoxyethylene alkyl ether sulfate such as polyoxyethylene (containing 12 mol of ethylene oxide) dodecylphenyl ether sodium sulfate; alkyl benzene sulfonates such as sodium dodecyl benzene sulfonate, naphthol sulfonates such as sodium 1-naphthol-4-sulfonate and disodium 2-naphthol-3,6-disulfonate; naphthol sulfonate salts such as sodium 1-naphthol-4-sulfonate and disodium 2-naphthol-3,6-disulfonate; (poly) alkylnaphthalenesulfonic acid salts such as sodium diisopropylnaphthalenesulfonate and sodium dibutylnaphthalenesulfonate; alkyl sulfates such as sodium dodecyl sulfate and sodium oleyl sulfate; and the like.

(43) Examples of the cationic surfactant include mono to tri alkylamine salts, dimethyldialkylammonium salt, trimethylalkylammonium salt, dodecyltrimethylammonium salt, hexadecyltrimethylammonium salt, octadecyltrimethylammonium salt, dodecyldimethylammonium salt, octadecenyl Dimethyl ethyl ammonium salt, dodecyl dimethyl benzyl ammonium salt, hexadecyl dimethyl benzyl ammonium salt, octadecyl dimethyl benzyl ammonium salt, trimethyl benzyl ammonium salt, triethyl benzyl ammonium salt, hexadecyl pyridinium salt, dodecyl pyridinium salt, dodecyl picolinium salt, dodecylimidazolinium salt, oleyl imidazolinium salt, octadecylamine acetate, dodecylamine acetate, and the like.

(44) Examples of the nonionic surfactant include, a sugar ester, fatty acid ester, C1 to C25 alkoxyl phosphate (salt), sorbitan ester, C1 to C22 aliphatic amide and the like, to which 2 to 300 moles of ethylene oxide (EO) and/or propylene oxide (PO) are additionally condensed. In addition, examples of the nonionic surfactant include the sulfuric acid adduct or the sulfonate adduct of a condensation product of silicon-based polyoxyethylene ether, silicon-based polyoxyethylene ester, fluorine-based polyoxyethylene ether, fluorine-based polyoxyethylene ester, ethylene oxide and/or propylene oxide; and alkylamine or diamine.

(45) Examples of the amphoteric surfactant include betaine, carboxybetaine, imidazolinium betaine, sulfobetaine, aminocarboxylic acid and the like.

(46) The above-described complexing agent is used for stabilizing noble metal ions and the like in the bath with the plating solution including a noble metal such as silver and homogenizing the composition of the precipitated alloy. Examples of the complexing agent include oxycarboxylic acid, polycarboxylic acid, monocarboxylic acid and the like. Specific examples include gluconic acid, citric acid, glucoheptonic acid, gluconolactone, glucoheptolactone, formic acid, acetic acid, propionic acid, butyric acid, ascorbic acid, oxalic acid, malonic acid, succinic acid, glycolic acid, malic acid, Tartaric acid, diglycolic acid, thioglycolic acid, thiodiglycolic acid, thioglycol, thiodiglycol, mercaptosuccinic acid, 3,6-dithia-1,8-octanediol, 3,6,9-trithiadecane-1,11-disulfonic acid, thiobis (dodecaethylene glycol), di(6-methylbenzothiazolyl) disulfide trisulfonic acid, di(6-chlorobenzothiazolyl) disulfide disulfonic acid, gluconic acid, citric acid, glucoheptonic acid, gluconolactone, glucoheptolactone, dithiodianiline, dipyridyl disulfide, mercaptosuccinic acid, sulfite, thiosulfate, ethylenediamine, ethylenediamine tetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), nitrilotriacetic acid (NTA), iminodiacetic acid (IDA), iminodipropionic acid (IDP), hydroxyethyl ethylenediamine triacetic acid (HEDTA), triethylenetetramine hexaacetic acid (TTNA), ethylenedioxybis (ethylamine)-N,N,N,N-tetraacetic acid, glycine, nitrilotrimethylphosphonic acid or salts thereof and the like. They also include sulfur-containing compounds such as thioureas and phosphorus compounds such as tris (3-hydroxypropyl) phosphine. Examples of the conductive salt include sodium salt, potassium salt, magnesium salt, ammonium salt, amine salt and the like of sulfuric acid, hydrochloric acid, phosphoric acid, sulfamic acid, sulfonic acid.

(47) The brightener is used to impart gloss to the plating film. Examples of the brightener include: varieties of aldehydes such as benzaldehyde, o-chlorobenzaldehyde, 2,4,6-trichlorobenzaldehyde, m-chlorobenzaldehyde, p-nitrobenzaldehyde, p-hydroxybenzaldehyde, furfural, 1-naphthaldehyde, 2-naphthaldehyde, 2-hydroxy-aldehyde, 3-acenaphthoaldehyde, benzylideneacetone, pyridideneacetone, furfurylideneacetone, cinnamaldehyde, anisaldehyde, salicylaldehyde, crotonaldehyde, acrolein, glutaraldehyde, paraldehyde, vanillin; benzothiazoles such as triazine, imidazole, indole, quinoline, 2-vinylpyridine, aniline, phenanthroline, neocuproine, picolinic acid, thiourea, N-(3-hydroxybutylidene)-p-sulfanilic acid, N-butylidenesulfanilic acid, N-cinnamoylidenesulfanilic acid, 2,4-diamino-6-(2-methylimidazolyl (1)) ethyl-1,3,5-triazine, 2,4-diamino-6-(2-methylimidazolyl (1)) ethyl-1,3,5-triazine, 2,4-diamino-6-(2-undecylimidazolyl (1)) ethyl-1,3,5-triazine, phenyl salicylate, or benzothiazole, 2-mercaptoputbenzothiazole, 2-methylbenzothiazole, 2-aminobenzothiazole, 2-amino-6-meth 2-methyl-5-chlorobenzothiazole, 2-hydroxybenzothiazole, 2-amino-6-methylbenzothiazole, 2-chlorobenzothiazole, 2,5-dimethylbenzothiazole, 5-hydroxy-methylbenzothiazole; and the like.

(48) The antioxidant is used to prevent oxidation of soluble stannous salt to tin dioxide salt. Examples of the antioxidant include hypophosphorous acids, ascorbic acid or the salts thereof, phenol sulfonic acid (Na), cresolsulfonic acid (Na), hydroquinone sulfonic acid (Na), hydroquinone, or -naphthol, catechol, resorcinol, phloroglucin, hydrazine, phenolsulfonic acid, catecholsulfonic acid, hydroxybenzenesulfonic acid, naphtholsulfonic acid, the salts thereof, and the like.

(49) The ammonium salt (C) included in the plating solution of the present invention can be used singly or in combination, and the content in the plating solution is 0.1 to 10 g/L, preferably 1 to 2 g/L. If the content is less than the appropriate range, uniform electrodepositivity and effect of improving the film appearance cannot be obtained sufficiently, whereas if it is too much, burning of plating may occur.

(50) The predetermined soluble metal salt (A) can be used singly or in combination, and the content thereof in the plating solution is 30 to 100 g/L, preferably 40 to 60 g/L. When the content is less than the appropriate range, productivity drops. As the content increases, the cost of the plating solution increases.

(51) The inorganic acid, the organic acid or the salt thereof (B) can be used singly or in combination, and the content thereof in the plating solution is 80 to 300 g/L, preferably 100 to 200 g/L. If the content is less than the appropriate range, the conductivity decreases; and the voltage increases. When the content increases, the viscosity of the plating solution rises and the agitation speed of the plating solution decreases.

(52) The additive concentrations of the above-described components (A) to (C) are arbitrarily adjusted/selected according to the plating method such as barrel plating, rack plating, high-speed continuous plating, rackless plating, bump plating and the like.

(53) On the other hand, the liquid temperature of the electroplating solution of the present invention is generally 70 C. or less, preferably 10 to 40 C. When the current density is too low, the productivity deteriorates, whereas when it is too high, the uniform electrodepositivity deteriorates. The cathode current density is generally 0.01 to 150 A/dm.sup.2, preferably 0.1 to 100 A/dm.sup.2.

(54) A predetermined metal film can be formed on an electronic component by applying the plating solution of tin or tin alloy containing the ammonium salt included in the plating solution of the present invention to the electronic component to be plated. Examples of the electronic parts include a printed circuit board, a flexible printed circuit board, a film carrier, a semiconductor integrated circuit, a resistor, a capacitor, a filter, an inductor, a thermistor, a quartz oscillator, a switch, a lead wire, and the like. In addition, it is also possible to form a film by applying the plating solution of the present invention to a part of an electronic part such as a bump electrode of a wafer.

EXAMPLES

Ammonium Salt Used in Examples 1 to 6 and Comparative Examples 1 and 2

(55) Among Examples 1 to 6 of the present invention, Example 1 is an example of a tin plating solution containing the ammonium salt 1; Example 2 is an example of a tin-silver alloy plating solution containing the ammonium salt 2; Example 3 is an example of a tin-silver alloy plating solution containing an ammonium salt 3; Example 4 is an example of a tin plating solution containing the ammonium salt 4; Example 5 is an example of a tin-copper alloy plating solution containing the ammonium salt 5; and Example 6 is a tin-zinc alloy plating solution containing the ammonium salt 5. Among Comparative Examples 1 and 2, Comparative Example 1 is an example of a tin plating solution containing the ammonium salt 6 when the substituent R.sub.1 is C.sub.4H.sub.9 (n=4), and Comparative Example 2 is an example of a tin plating solution containing C.sub.20H.sub.41 (n=20) and a tin-silver alloy plating solution containing the ammonium salt 7. Examples 1 and 4 of the present invention and Comparative Example 1 are acidic tin plating solutions, Examples 2, 3, and 5 and 6 of the present invention, and Comparative Example 2 is an acidic tin alloy plating solution.

(56) The ammonium salts 1 to 5 of Examples 1 to 6 of the present invention and the ammonium salts 6 and 7 of Comparative Examples 1 and 2 can be purchased from chemical manufacturers. Details of the ammonium salts used in Examples 1 to 6 of the present invention and Comparative Examples 1 and 2 are shown in Table 1.

(57) TABLE-US-00001 TABLE 1 Kind of the (C) Additive represented by the general formula (1) ammonium salt R.sub.1 R.sub.2 R3 Y X Ammonium salt 1 C.sub.8H.sub.17 CH.sub.3 CH.sub.3 (CH.sub.2CH.sub.2O).sub.2 Cl Ammonium salt 2 C.sub.14H.sub.29 CH.sub.3 CH.sub.3 CH.sub.2CH.sub.2O Cl Ammonium salt 3 C.sub.16H.sub.33 CH.sub.3 CH.sub.3 (CH.sub.2CH.sub.2O).sub.2 Cl Ammonium salt 4 C.sub.12H.sub.29 CH.sub.3 CH.sub.3 (CH.sub.2CH.sub.2O).sub.2 Br Ammonium salt 5 C.sub.10H.sub.21 C.sub.2H.sub.5 C.sub.2H.sub.5 (CH.sub.2CH.sub.2O).sub.2 Cl Ammonium salt 6 C.sub.4H.sub.9 CH.sub.3 CH.sub.3 (CH.sub.2CH.sub.2O).sub.2 Cl Ammonium salt 7 C.sub.20H.sub.41 CH.sub.3 CH.sub.3 (CH.sub.2CH.sub.2O).sub.2 Cl

Examples 1 to 6 and Comparative Examples 1 and 2

(58) Examples 1 to 6 of the present invention and Comparative Examples 1 and 2 in which the components (A) to (C) and various combinations of surfactants, complexing agents and antioxidants were changed are shown in Tables 2 and 3. In Table 3, surfactant 1 means polyoxyethylene bisphenol ether and surfactant 2 means polyoxyethylene phenyl ether, respectively.

(59) TABLE-US-00002 TABLE 2 (A) (B) (C) Concentration Concentration Concentration Substance name g/L Substance name g/L Substance name g/L Example 1 Methanesulfonate Sn 50 Methanesulfonic acid 120 Ammonium salt 1 6 Example 2 Methanesulfonate Sn 50 Methanesulfonic acid 120 Ammonium salt 2 0.5 Methanesulfonate Ag 1 Example 3 Methanesulfonate Sn 50 Methanesulfonic acid 120 Ammonium salt 3 1 Methanesulfonate Ag 1 Example 4 Sulfate Sn 50 Sulfuric acid 120 Ammonium salt 4 0.5 Example 5 Methanesulfonate Sn 50 Methanesulfonic acid 120 Ammonium salt 5 3 Methanesulfonate Cu 1 Example 6 Methanesulfonate Sn 50 Methanesulfonic acid 120 Ammonium salt 5 8 Methanesulfonate Zn 1 Comparative Example 1 Methanesulfate Sn 50 Methanesulfonic acid 120 Ammonium salt 6 1 Comparative Example 2 Methanesulfonate Sn 50 Methanesulfonic acid 120 Ammonium salt 7 0.5 Methanesulfonate Ag 1

(60) TABLE-US-00003 TABLE 3 Other additives Concentration Concentration Concentration Nonionic surfactant g/L Complexing agent g/L Antioxidant g/L Example 1 Surfactant 1 5 Catechol 1 Example 2 Surfactant 1 5 Thiourea 10 Catechol 1 Example 3 Surfactant 1 5 Thiourea 10 Catechol 1 Example 4 Surfactant 2 5 Hydroquinone 1 Example 5 Surfactant 2 5 Thioglycol 10 Hydroquinone 1 Example 6 Surfactant 2 5 Thioglycol 10 Hydroquinone 1 Comparative Example 1 Surfactant 1 5 Catechol 1 Comparative Example 2 Surfactant 2 5 Thiourea 10 Hydroquinone 1
[Evaluation Test]

(61) With respect to the plating solutions obtained in Examples 1 to 8 of the present invention and Comparative Examples 1 and 2, a Hull cell test and a plating test were conducted, and the electrodepositivity and the void occurrence ratio of each plating solution was evaluated. The results are shown in Table 4.

(62) (A) Hull Cell Test

(63) In the Hull cell test, a commercially available Hull cell tester (manufactured by Yamamoto Plating Test Instrument Co., Ltd.) was used, and a copper hulled cell plate (length 70 mm, width 100 mm, thickness 0.3 mm) was used as a substrate to be plated. The plating solution was placed in a Hull cell tester, the liquid temperature was set to 25 C., and the energizing current was 2 A. The plating time was 5 minutes and the plating solution was not stirred during the plating process. The hull cell evaluation was made according to the presence or absence of burning of plating on the plated hull cell plate.

(64) (b) Plating Test

(65) (b-1) Variation in Plating Film Thickness

(66) In the first plating test, a copper substrate (10 cm in length, 10 cm in width, 0.3 mm in thickness) was immersed in a plating solution at a liquid temperature of 25 C. and subjected to a current density of 5 A/dm.sup.2 for 1 minute. The film thickness of 10 places of the obtained plating film was measured with a fluorescent X-ray film thickness measuring device (manufactured by SII NanoTechnology Inc.). The standard deviation (3) of the film thickness at ten places was calculated, and it was evaluated whether the plating film thickness variation, that is, the electrodeposition was performed uniformly.

(67) (b-2) Void Occurrence Rate of Plating Film

(68) In the second plating test, a copper substrate (10 cm in length, 7 cm in width, 0.3 mm in thickness) was immersed in a plating solution at a liquid temperature of 25 C. and energized at a current density of 3 A/dm.sup.2 for 13 minutes to form a plating film on the substrate. The center of the substrate with the plating film was cut into square pieces of 10 mm in length and 10 mm in width. Simulating the reflaw treatment, these pieces were heated in a nitrogen atmosphere with a hot plate until the surface temperature of the substrate reached 270 C., and then rapidly cooled after retaining them at the raised temperature for 20 seconds. Evaluation of voids was conducted by: observing the plating film after reflow with transmission X-ray; and calculating the void area ratio by dividing the area occupied by the void by the area of the small pieces of 10 mm in length and 10 mm in width. The presence or absence of the voids was evaluated based on the above-described void area ratio, and when the void area ratio was 0.1% or more, it was defined as voids being generated.

(69) TABLE-US-00004 TABLE 4 Hull cell test Plating test Presence or absence Standard deviation of burning of of the plating film Void plating thickness (3) area ratio (%) Example 1 Absent 0.89 0.03 Example 2 Absent 0.84 0.02 Example 3 Absent 0.39 0.05 Example 4 Absent 0.42 0.01 Example 5 Absent 0.68 0.01 Example 6 Absent 0.59 0.04 Comparative Present 2.2 0.06 Example 1 Comparative Present 0.76 3.4 Example 2
[Result of Evaluation]

(70) As is apparent from Table 4, in Comparative Example 1 in which plating was performed with the tin plating solution including the ammonium salt whose R.sub.1 in the formula (1) was C.sub.4H.sub.9, since n of C.sub.nH.sub.2n+1 was 4, the variation in plating film thickness was as large as 2.2. In Comparative Example 2 in which the plating was performed with the tin plating solution including the ammonium salt whose R.sub.1 in the formula (1) was C.sub.20H.sub.41, since n of C.sub.nH.sub.2n+1 was 20, the void are ratio was as large as 3.4%. On the other hand, in Examples 1 to 6 of the present invention in which plating was carried out with the tin plating solution including ammonium salts satisfying the prescribed conditions of R.sub.1, R.sub.2 and R.sub.3 in the formula (1), the variation of the plating film thickness was as low as 0.39 to 0.89. In addition, in Examples 1 to 6 of the present invention, the void area ratio was as low as 0.01 to 0.05. Thus, it was demonstrated that a good plating film was obtained with an excellent uniform electrodepositivity free of void generation.

INDUSTRIAL APPLICABILITY

(71) The plating solution of the present invention can be applied to electronic components such as printed boards, flexible printed boards, film carriers, semiconductor integrated circuits, resistors, capacitors, filters, inductors, thermistors, crystal resonators, switches, lead wires and the like; and a part of electronic component such as the bump electrode of the wafer.