Light-emitting ceramic and wavelength conversion device

Abstract

A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W, wherein M1 is at least one of La, Y, Gd, Yb, and Lu, M2 is at least one of Zr, Sn, and Hf, M3 is at least one of Ta, Nb, and Sb, X, Y, Z, and W are positive numbers that maintain electrical neutrality, X+Y+Z=2.0, 0.005≤Z≤0.2, and 3X+4Y+5Z is 7.02 or less.

Claims

1. A light-emitting ceramic comprising: a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of a general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W, wherein M1 is at least one element selected from the group consisting of La, Y, Gd, Yb, and Lu, M2 is at least one element selected from the group consisting of Zr, Sn, and Hf, M3 is at least one element selected from the group consisting of Ta, Nb, and Sb, X, Y, Z, and W are positive numbers that maintain electrical neutrality,
X+Y+Z=2.0,
0.005≤Z≤0.2, 3X+4Y+5Z is 7.02 or less, and when the light-emitting ceramic has a thickness of 0.5 mm, the linear transmittance at a wavelength of 700 nm is 40% or more.

2. The light-emitting ceramic according to claim 1, wherein 3X+4Y+5Z is 6.92 to 7.02.

3. The light-emitting ceramic according to claim 2, wherein 0.02≤Z≤0.2.

4. The light-emitting ceramic according to claim 1, wherein 0.02≤Z≤0.2.

5. The light-emitting ceramic according to claim 2, wherein 0.05≤Z≤0.2.

6. The light-emitting ceramic according to claim 1, wherein 0.05≤Z≤0.2.

7. The light-emitting ceramic according to claim 1, wherein the pyrochlore type compound contains 5 mol % or less of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

8. The light-emitting ceramic according to claim 1, wherein the pyrochlore type compound contains 0.05 mol % or more of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

9. The light-emitting ceramic according to claim 1, wherein the pyrochlore type compound contains 3 mol % or less of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

10. The light-emitting ceramic according to claim 1, wherein the pyrochlore type compound contains 1 mol % or less of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

11. The light-emitting ceramic according to claim 1, wherein M1 is a trivalent ion of the at least one element selected from the group consisting of La, Y, Gd, Yb, and Lu, M2 is a tetravalent ion of the at least one element selected from the group consisting of Zr, Sn, and Hf, M3 is a pentavalent ion of the at least one element selected from the group consisting of Ta, Nb, and Sb.

12. A wavelength conversion device comprising: a wavelength converter containing a light-emitting ceramic that comprises: a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of a general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W, wherein M1 is at least one element selected from the group consisting of La, Y, Gd, Yb, and Lu, M2 is at least one element selected from the group consisting of Zr, Sn, and Hf, M3 is at least one element selected from the group consisting of Ta, Nb, and Sb, X, Y, Z, and W are positive numbers that maintain electrical neutrality,
X+Y+Z=2.0,
0.005≤Z≤0.2, and 3X+4Y+5Z is 7.02 or less; and a light source that irradiates the wavelength converter with ultraviolet rays.

13. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, 3X+4Y+5Z is 6.92 to 7.02.

14. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, 0.02≤Z≤0.2.

15. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, 0.05≤Z≤0.2.

16. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, the pyrochlore type compound contains 5 mol % or less of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

17. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, the pyrochlore type compound contains 0.05 mol % or more of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

18. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, the pyrochlore type compound contains 3 mol % or less of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

19. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic, the pyrochlore type compound contains 1 mol % or less of the Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W.

20. The wavelength conversion device according to claim 12, wherein, in the light-emitting ceramic: M1 is a trivalent ion of the at least one element selected from the group consisting of La, Y, Gd, Yb, and Lu, M2 is a tetravalent ion of the at least one element selected from the group consisting of Zr, Sn, and Hf, M3 is a pentavalent ion of the at least one element selected from the group consisting of Ta, Nb, and Sb.

Description

BRIEF EXPLANATION OF THE DRAWINGS

(1) FIG. 1 is a diagram illustrating XRD diffraction patterns of light-emitting ceramic Nos. 1 and 4 prepared in experimental examples.

(2) FIG. 2 is a diagram illustrating temporal changes in emission intensity in the case of using light-emitting ceramic Nos. 1 and 5.

(3) FIG. 3 is a diagram illustrating XRD diffraction patterns of light-emitting ceramic Nos. 17 and 18.

(4) FIG. 4 is a schematic configuration diagram illustrating a wavelength conversion device as an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

(5) Hereinafter, details of the present invention and specific embodiments thereof will be described with reference to the drawings.

(6) It is to be noted that the embodiments described in the present specification are illustrative and that partial replacement or combination of configurations is possible between different embodiments.

(7) A light-emitting ceramic according to the present invention includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W, where M1 is at least one element selected from the group consisting of La, Y, Gd, Yb, and Lu, M2 is at least one element selected from the group consisting of Zr, Sn, and Hf, M3 is at least one element selected from the group consisting of Ta, Nb, and Sb, and X, Y, Z, and W are positive numbers that maintain electrical neutrality, X+Y+Z=2.0, 0.005≤Z≤0.2, and 3X+4Y+5Z is 7.02 or less.

(8) The light-emitting ceramic according to the present invention can be obtained by firing a ceramic material having the above composition ratio and then heat-treating the fired product in a reducing atmosphere.

(9) The light-emitting ceramic of the present invention is a ceramic and is thus easy to be manufactured as compared with a luminescent material having single crystals. In the above firing, the ceramic material may be fired in the form of powder, or may be fired after being once formed into a predetermined shape. In both cases, the light-emitting ceramic can be obtained by heat treatment in a reducing atmosphere. The light-emitting ceramic may be in the form of powder or may be dispersed in a resin or glass. The light-emitting ceramic, either in the form of powder or dispersed in a resin or glass, can be used as a material for producing an element having a wavelength conversion function.

(10) The light-emitting ceramic M1.sub.XM2.sub.YM3.sub.ZO.sub.W of the present invention is a pyrochlore type compound. In the present invention, the light-emitting ceramic M1.sub.XM2.sub.YM3.sub.ZO.sub.W is defined as the pyrochlore type compound as long as the peak of (311) or (331), which is a superlattice peak in X-ray diffraction, can be seen.

(11) In the light-emitting ceramic according to the present invention, 3X+4Y+5Z is preferably 6.92 or more. In that case, since the light-emitting ceramic has no deliquescence, a light-emitting ceramic suitable for the wavelength conversion device or the like can be provided.

(12) Further, Z in the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W as described above is preferably 0.02 or more, and more preferably 0.05 or more. In that case, photodegradation is much less likely to occur.

(13) In the present invention, the content of Bi is 0.01 mol % or more with respect to 100 mol % of the compound represented by the general formula M1.sub.XM2.sub.YM3.sub.ZO.sub.W. The content of Bi is preferably 0.05 mol % or more. Thus, the quantum yield of emission light can be further increased. The content of Bi is preferably 5 mol % or less. Thus, the quantum yield of emission light can be further increased. The content of Bi is more preferably 3 mol % or less, and still more preferably in a range of 1 mol % or less.

(14) In order to obtain the light-emitting ceramic according to the present invention, it is preferable to use Bi.sub.2O.sub.3 as the Bi source.

(15) When the light-emitting ceramic according to the present invention has a thickness of 1 mm, the light transmittance at a wavelength of 450 nm to 800 nm is preferably 50%. The light transmittance is more preferably 60% or more, and still more preferably 70% or more. This further enhances the translucency, and it is possible to provide a light-emitting ceramic more suitable for a wavelength conversion device, illumination or the like.

(16) In the light-emitting ceramic according to the present invention, the emission quantum yield when irradiated with excitation light is preferably 40% or more, more preferably 50% or more, and still more preferably 60% or more.

(17) (Method for Manufacturing Light-Emitting Ceramic)

(18) The method for manufacturing the light-emitting ceramic of the present invention will be described.

(19) First, ceramic raw material powder is formed into a predetermined shape, and an unfired ceramic formed body as a ceramic material is obtained. Next, the unfired ceramic formed body is fired in an atmosphere containing oxygen. As a result, a ceramic M1.sub.XM2.sub.YM3.sub.ZO.sub.W is obtained.

(20) Preferably, the firing atmosphere for obtaining the ceramic M1.sub.XM2.sub.YM3.sub.ZO.sub.W has an oxygen concentration of 98 vol % or more. The firing temperature (maximum temperature) can be, for example, about 1500° C. or more and about 1800° C. or less. The holding time of the firing temperature (maximum temperature) in the firing step can be, for example, about 5 hours or more and about 100 hours or less.

(21) Subsequently, the resulting ceramic M1.sub.XM2.sub.YM3.sub.ZO.sub.W is heat-treated in a reducing atmosphere. As a result, a light-emitting ceramic is obtained. The reducing atmosphere is not particularly limited, and may be, for example, an H.sub.2/H.sub.2O atmosphere. The temperature (maximum temperature) in the heat treatment is preferably, for example, 800° C. or more and 1200° C. or less, and more preferably 900° C. or more and 1100° C. or less. The holding time in the heat treatment temperature (maximum temperature) can be, for example, about 1 hour or more and about 100 hours or less.

(22) The light transmittance of the light-emitting ceramic at a wavelength of 400 nm or more and 600 nm or less is improved by the heat treatment as described above. Holes generated during firing serve as color centers and absorb light having a wavelength of 400 nm or more and 600 nm or less. On the other hand, it is considered that as a result of the heat treatment in the reducing atmosphere, the holes serving as the color centers are neutralized with electrons supplied from the oxygen side before reduction, so that the light transmittance is increased.

(23) The light-emitting ceramic according to the present invention is represented by M1.sub.XM2.sub.YM3.sub.ZO.sub.W, and may contain impurities unavoidably mixed, i.e., unavoidable impurities other than M1, M2, M3, and O. Examples of the unavoidable impurities include SiO.sub.2, B.sub.2O.sub.3, and Al.sub.2O.sub.3.

(24) (Embodiment of Wavelength Conversion Device)

(25) FIG. 4 is a schematic configuration diagram illustrating a wavelength conversion device as an embodiment of the present invention.

(26) A wavelength conversion device 6 is used for illumination or the like, and includes a wavelength converter 1 and a light source 2. The wavelength converter 1 is made of the light-emitting ceramic of the present invention. The light source 2 emits ultraviolet rays. The light source 2 is provided on a substrate 4. A reflector 3 is disposed on the substrate 4 so as to surround the periphery of the light source 2 and surround the optical axis of ultraviolet rays emitted from the light source 2. The wavelength converter 1 is fixed to the light emitting side end of the reflector 3 and is opposed to the light source 2 at a position separated from the light source 2. For example, an LED or the like can be used as the light source 2.

(27) When the wavelength conversion device 6 is driven, excitation light is emitted from the light source 2 toward the wavelength converter 1. Part of the excitation light is reflected by the reflector 3 and reaches the wavelength converter 1. The wavelength converter 1 is excited by the excitation light and emits light.

(28) Although the wavelength conversion device 6 has been described, the wavelength conversion device of the present invention is not limited to the wavelength conversion device 6 illustrated in FIG. 4, and may be a wavelength conversion device that has various forms and includes a wavelength converter made of the light-emitting ceramic of the present invention and a light source for emitting light to the light-emitting ceramic.

EXPERIMENTAL EXAMPLES

(29) Subsequently, the present invention will be described in more detail by describing experimental examples of light-emitting ceramics of the present invention. It is to be noted that the present invention is not limited to the following experimental examples.

(30) Hereinafter, the present invention will be described more specifically by way of specific experimental examples of the present invention.

Experimental Example 1

(31) As raw materials, La(OH).sub.3, Gd.sub.2O.sub.3, Y.sub.2O.sub.3, Yb.sub.2O.sub.3, Lu.sub.2O.sub.3, ZrO.sub.2, HfO.sub.2, SnO.sub.2, Nb.sub.2O.sub.5, Ta.sub.2O.sub.5, Sb.sub.2O.sub.3, and Bi.sub.2O.sub.3 were prepared. These raw materials were weighed so as to have the composition represented by the molar ratios in the following Table 1 and wet-mixed with a ball mill for 20 hours. The resulting mixture was dried and then calcined at 1300° C. for 3 hours to obtain a calcined product. The resulting calcined product was placed in a ball mill together with water and an organic dispersant and wet-pulverized for 12 hours. The resulting pulverized product was formed into a disk shape having a diameter of 30 mm and a thickness of 5 mm by a wet forming method. The resulting formed product was put into a powder body having the same composition as that of the formed product, and fired at a temperature of 1700° C. for 20 hours in an oxygen atmosphere with (an oxygen concentration of about 98 vol %). Thereby, a sintered body was obtained.

(32) The resulting sintered body was cut into a rectangular plate shape (5 mm square and 1.2 mm thickness) by a crystal cutter. The rectangular plate-shaped sintered body obtained by cutting was heat-treated in an atmosphere of N.sub.2/H.sub.2/H.sub.2O mixed gas (oxygen partial pressure: 1.7×10.sup.−13 MPa). The temperature for the heat treatment, i.e., maximum temperature was 1000° C., and the holding time at 1000° C. was set to 3 hours. Both surfaces of the rectangular plate-shaped sintered body after the heat treatment were mirror-polished so as to be a substrate having a thickness of 0.5 mm, and the resulting substrate was used as an evaluation sample.

(33) According to the procedures as described above, sample Nos. 1 to 14 shown in Table 1 below were obtained. The composition ratio for charging in Table 1 is a molar ratio. This molar ratio is normalized so that X+Y+Z=2.0.

(34) Further, since M1 is a trivalent ion, M2 is a tetravalent ion, and M3 is a pentavalent ion, values of X, Y, and Z are set so that the total charge of cations in these ions are not inconsistent with the general formula A.sub.2B.sub.2O.sub.7 of the pyrochlore type compound. In Experimental Example 1, the values of X, Y, and Z were set so as to satisfy 3X+4Y+5Z=7.0 or near 3X+4Y+5Z=7.0.

(35) Further, in order to obtain the above evaluation samples, XRF composition analysis was performed based on the composition of the calcined product obtained in the middle of the process. As a result, a sintered body having the intended composition was obtained, and it was confirmed that there was no significant volatilization of components in the composition.

(36) Further, XRD analysis was performed on the resulting evaluation samples. FIG. 1 illustrates XRD diffraction patterns of sample Nos. 1 and 4. As is clear from FIG. 1, it can be seen that both sample Nos. 1 and 4 have substantially a single phase of pyrochlore structure. The results of sample Nos. 1 and 4 are representatively shown in FIG. 1, and it is confirmed that the other samples also have a single phase of pyrochlore structure.

(37) Regarding the resulting samples, the emission quantum yield at an excitation wavelength of 365 nm was measured using an absolute PL quantum yield measurement system (product number: C9920-02, manufactured by Hamamatsu Photonics K.K.). The results are shown in Table 1 below.

(38) Further, each of the samples had transparency. The linear transmittance of each of the samples at 700 nm was measured using an ultraviolet-visible spectrophotometer (product number: UV-2500PC, manufactured by Shimadzu Corporation). Table 1 below also shows the linear transmittance.

(39) (Evaluation of Photodegradation)

(40) The surfaces of the resulting evaluation samples were irradiated with a He—Cd laser having a wavelength of 325 nm and an output of 10 mW for 120 minutes using a photoluminescence measuring device (manufactured by Seishin Trading Co., Ltd.). The temporal change of the emission intensity obtained from each of the samples in the above process was measured. The monitoring wavelength of the emission intensity was set to 580 nm. As examples of the measurement results, FIG. 2 shows temporal changes of emission intensities of sample Nos. 1 and 5. As is clear from FIG. 2, a decrease in emission intensity was particularly remarkable for several minutes after the start of light irradiation, and thereafter, the amount of decrease in the emission intensity was small with time, and the emission intensity showed a tendency of saturation. In this experimental example, the photodegradation of each sample was evaluated based on a relative emission intensity. Here, the relative emission intensity refers to a ratio of the emission intensity after 120 minutes of irradiation to the emission intensity immediately after the irradiation. The relative emission intensity measured as described above is also shown in Table 1 below.

(41) TABLE-US-00001 TABLE 1 Quantum Relative Composition ratio for charging Linear yield emission Sample M1.sub.X M2.sub.Y M3.sub.Z X + 3X + transmittance excited intensity No. La Gd Y Yb Lu Zr Sn Hf Ta Nb Sb Bi Y + Z Z 4Y + 5Z at 700 nm at 365 nm at 580 nm  1* 1.000 1.000 0.0010 2.000 0.000 7.000 74.3 92.0 0.66  2* 1.002 0.996 0.002 0.0010 2.000 0.002 7.000 74.5 93.0 0.68  3 1.005 0.990 0.005 0.0010 2.000 0.005 7.000 74.5 89.6 0.75  4 1.020 0.980 0.020 0.0010 2.000 0.020 7.000 74.2 91.4 0.88  5 1.050 0.900 0.050 0.0010 2.000 0.050 7.000 74.3 90.2 0.90  6 1.100 0.800 0.100 0.0010 2.000 0.100 7.000 74.4 89.8 0.94  7 1.200 0.600 0.200 0.0010 2.000 0.200 7.000 74.0 82.8 0.92  8* 1.400 0.200 0.400 0.0010 2.000 0.400 7.000 18.2 21.4 —  9* 0.990 1.010 0.0010 2.000 0.000 7.010 52.1 88.1 0.64 10* 1.020 0.980 0.0010 2.000 0.000 6.980 73.5 90.3 0.65 11 1.020 0.960 0.020 0.0001 2.000 0.020 7.000 72.5 84.4 0.87 12 1.020 0.960 0.020 0.0050 2.000 0.020 7.000 73.0 80.3 0.86 13 1.020 0.960 0.020 0.0300 2.000 0.020 7.000 69.8 51.2 0.86 14 1.020 0.960 0.020 0.0500 2.000 0.020 7.000 62.0 40.1 0.88

(42) Table 1 shows that, in sample No. 1 where Z=0, the quantum yield was 80% or more and the linear transmittance was 70% or more. That is, sample No. 1 is a light-emitting ceramic having high transparency and excellent light transmittance. However, the relative emission intensity is less than 0.7, and significant photodegradation is observed in sample No. 1.

(43) On the other hand, in all of sample Nos. 3 to 7 containing Ta with Z=0.005 to 0.200 as a pentavalent ion, the relative emission intensity is 0.75 or more. Hence, the fact shows that photodegradation can be reduced. Further, when the composition of each of sample Nos. 3 to 7 is compared with the composition of sample No. 1, the amount of La is increased and the amount of Zr is decreased in sample Nos. 3 to 7, except for the presence or absence of Ta.

(44) The results of sample Nos. 9 and 10 show that if the component ratio of La and Zr in the composition is only changed, there is no effect on the characteristics of photodegradation. Therefore, it can be seen from the above results that the use of Ta as a pentavalent ion is effective in reducing the photodegradation.

(45) Further, the results of sample No. 2 show that when Z is 0.002 or less, the effect of reducing photodegradation is decreased, so that this is not preferable. Furthermore, the results of sample No. 8 show that when Z is 0.400 or more, the quantum yield and the light transmittance are lowered, so that this is not preferable. Therefore, it is desirable that Z be preferably in a range of more than 0.002 and less than 0.400, and more preferably 0.005 or more and 0.200 or less. In that case, the quantum yield and the light transmittance are good, and the photodegradation can be effectively reduced.

(46) Further, as is clear from the results of sample Nos. 11 and 12, it is found that even if the amount of Bi charged is increased or decreased, the degree of reduction of photodegradation due to the use of Ta as a pentavalent ion is not affected.

(47) As is clear from the results of sample Nos. 13 and 14, it is found that the quantum yield of sample No. 13 containing 0.0300 mol % of Bi with respect to 100 mol % of M1.sub.XM2.sub.YM3.sub.ZO.sub.W and the quantum yield of sample No. 14 containing 0.0500 mol % of Bi with respect to 100 mol % of M1.sub.XM2.sub.YM3.sub.ZO.sub.W are slightly decreased, as compared with those of sample Nos. 4, 11, and 12 as mentioned above; however, the relative emission intensity of each of sample Nos. 13 and 14 show a sufficient value.

Experimental Example 2

(48) Evaluation samples of sample Nos. 15 to 42 shown in Tables 2, 3, and 4 below were obtained in the same manner as in Experimental Example 1.

(49) The quantum yield, linear transmittance, and relative emission intensity of the resulting evaluation samples were determined in the same manner as in Experimental Example 1. The results are shown in Tables 2, 3, and 4 below. The composition ratios for charging in Tables 2, 3, and 4 are molar ratios, which are values normalized so that X+Y+Z=2.0. In the same manner as in Experimental Example 1, the values of X, Y, and Z were set so as to satisfy 3X+4Y+5Z=7.0 or near 3X+4Y+5Z=7.0. Tables 2, 3, and 4 below also show the values of X, Y, and Z.

(50) TABLE-US-00002 TABLE 2 Quantum Relative Composition ratio for charging Linear yield emission Sample M1.sub.X M2.sub.Y M3.sub.Z X + 3X + transmittance excited intensity No. La Gd Y Yb Lu Zr Sn Hf Ta Nb Sb Bi Y + Z Z 4Y + 5Z at 700 nm at 365 nm at 580 nm 15* 1.010 0.940 0.050 0.0010 2.000 0.050 7.040 21.2 4.8 — 16 1.030 0.920 0.050 0.0010 2.000 0.050 7.020 54.6 51.8 0.89 17 1.130 0.820 0.050 0.0010 2.000 0.050 6.920 71.8 81.6 0.91 18* 1.150 0.800 0.050 0.0010 2.000 0.050 6.900 62.1 74.6 0.89

(51) Table 2 shows the results of sample Nos. 15 to 18 containing Ta with Z=0.050 as a pentavalent ion when the total charge of cations (i.e., 3X+4Y+5Z) deviated from 7.000. From the result of sample No. 15, when the total charge is 7.040 or more, the quantum yield and the linear transmittance decrease, so that this is not preferable. As is clear from the results of sample No. 18, when the total charge is 6.900, the quantum yield and the linear transmittance are high, and photodegradation is less likely to occur. However, the XRD diffraction patterns of sample Nos. 17 and 18, illustrated in FIG. 3, show that unreacted La remains in the sample when the total charge is 6.900 or less. Thus, the sample shows deliquescence and this is not preferable. Therefore, the total charge of cations (i.e., 3X+4Y+5Z) is preferably 6.92 or more.

(52) The above total charge is preferably 7.02 or less.

(53) TABLE-US-00003 TABLE 3 Quantum Relative Composition ratio for charging Linear yield emission Sample M1.sub.X M2.sub.Y M3.sub.Z X + 3X + transmittance excited intensity No. La Gd Y Yb Lu Zr Sn Hf Ta Nb Sb Bi Y + Z Z 4Y + 5Z at 700 nm at 365 nm at 580 nm 19 1.020 0.960 0.010 0.010 0.0010 2.000 0.020 7.000 73.1 90.2 0.86 20 1.020 0.960 0.020 0.0010 2.000 0.020 7.000 73.1 88.3 0.90 21 1.020 0.960 0.010 0.010 0.0010 2.000 0.020 7.000 72.6 88.1 0.88 22 1.020 0.960 0.020 0.0010 2.000 0.020 7.000 72.9 89.4 0.87

(54) In sample Nos. 19 to 22 shown in Table 3, the results are shown when the pentavalent ion is Nb or Sb, or a combination of Ta, Nb, and Sb. As is clear from Table 3, it is found that photodegradation can be effectively reduced when Nb and Sb are used or when a combination of the elements as the pentavalent ions is used.

(55) TABLE-US-00004 TABLE 4 Composition ratio for charging Sample M1.sub.X M2.sub.Y M3.sub.Z No. La Gd Y Yb Lu Zr Sn Hf Ta Nb Sb Bi 23* 1.020 0.980 0.0010 24 1.020 0.960 0.020 0.0010 25* 1.020 0.980 0.0010 26 1.020 0.960 0.020 0.0010 27 1.020 0.500 0.460 0.020 0.0010 28 1.020 0.500 0.460 0.020 0.0010 29* 1.020 0.980 0.0010 30 1.020 0.960 0.020 0.0010 31* 1.020 0.980 0.0010 32 1.020 0.960 0.020 0.0010 33* 1.020 0.980 0.0010 34 1.020 0.960 0.020 0.0010 35* 1.020 0.980 0.0010 36 1.020 0.960 0.020 0.0010 37 0.800 0.060 0.060 0.050 0.050 0.960 0.020 0.0010 38 0.800 0.060 0.060 0.050 0.050 0.480 0.480 0.020 0.0010 39 0.800 0.060 0.060 0.050 0.050 0.480 0.240 0.240 0.020 0.0010 40 0.800 0.060 0.060 0.050 0.050 0.480 0.240 0.240 0.010 0.010 0.0010 41 0.800 0.060 0.060 0.050 0.050 0.480 0.240 0.240 0.010 0.010 0.0010 42 0.800 0.060 0.060 0.050 0.050 0.480 0.240 0.240 0.010 0.010 0.0010 Quantum Relative Linear yield emission Sample X + 3X + transmittance excited intensity No. Y + Z Z 4Y + 5Z at 700 nm at 365 nm at 580 nm 23* 2.000 0.000 6.980 88.3 55.8 0.52 24 2.000 0.020 7.000 72.2 54.7 0.84 25* 2.000 0.000 6.980 71.9 85.0 0.65 26 2.000 0.020 7.000 73.1 83.9 0.87 27 2.000 0.020 7.000 68.4 76.0 0.85 28 2.000 0.020 7.000 67.3 83.0 0.85 29* 2.000 0.000 6.980 42.5 53.6 0.51 30 2.000 0.020 7.000 41.8 50.4 0.79 31* 2.000 0.000 6.980 48.2 42.1 0.52 32 2.000 0.020 7.000 40.3 44.6 0.81 33* 2.000 0.000 6.980 47.5 46.7 0.68 34 2.000 0.020 7.000 43.6 43.8 0.83 35* 2.000 0.000 6.980 64.2 41.2 0.69 36 2.000 0.020 7.000 63.1 43.9 0.81 37 2.000 0.020 7.000 71.2 74.8 0.84 38 2.000 0.020 7.000 69.4 53.2 0.86 39 2.000 0.020 7.000 68.7 60.1 0.82 40 2.000 0.020 7.000 68.9 62.4 0.80 41 2.000 0.020 7.000 64.4 58.8 0.80 42 2.000 0.020 7.000 65.8 61.3 0.81

(56) In sample Nos. 23 to 42 in Table 4, the results are shown when various elements are used as elements of M1, M2, and M3, or when these elements are used in combination. As is clear from Table 4, it is found that when M1 is other than La, when M2 is other than Zr, and when M3 is other than Ta, if Z is 0.005 or more and 0.200 or less, it is possible to more effectively reduce photodegradation. Further, it is found that the total charge (i.e., 3X+4Y+5Z) is preferably 6.92 or more, and thus it is possible to more effectively reduce photodegradation. Furthermore, it is found that when 3X+4Y+5Z is 7.02 or less, photodegradation is effectively reduced.

DESCRIPTION OF REFERENCE SYMBOLS

(57) 1: Wavelength converter 2: Light source 3: Reflector 4: Substrate 6: Wavelength conversion device