PRESSURE SENSOR AND METHOD OF PRODUCING THE SAME

Abstract

Provided are a pressure sensor which exhibits exceptional performance and a method of producing the same. The pressure sensor includes: a silicon substrate having a cavity; a diaphragm which is formed of a metallic glass and has a tensile stress in a range in which a resonant frequency is higher than an audible range; and a counter electrode which is insulated from the diaphragm and has a plurality of holes. The diaphragm and the counter electrode are disposed on the silicon substrate to face each other with a gap therebetween, the diaphragm and the counter electrode being released from the silicon substrate by the cavity.

Claims

1. A pressure sensor, comprising: a silicon substrate having a cavity; a diaphragm which is formed of a metallic glass and has a tensile stress in a range in which a resonant frequency is higher than an audible range; and a counter electrode insulated from the diaphragm and having a plurality of holes, wherein the diaphragm and the counter electrode are disposed on the silicon substrate to face each other with a gap therebetween, the diaphragm and the counter electrode being released from the silicon substrate by the cavity.

2. The pressure sensor according to claim 1, wherein the diaphragm is divided into a plurality of portions, and wherein each portion is supported in a cantilevered manner.

3. The pressure sensor according to claim 1, wherein a thickness of the diaphragm varies according to a location.

4. The pressure sensor according to claim 3, wherein the diaphragm has a thick portion and thin portions surrounding the thick portion, the thick portion forming a honeycomb shape, a lattice shape, a radial shape, or a combination thereof.

5. The pressure sensor according to claim 1, further comprising a readout circuit which reads out a vibration signal of the diaphragm, wherein the readout circuit and the diaphragm are provided on the same die.

6. The pressure sensor according to claim 1, wherein the diaphragm has a tensile stress greater than 0 and no greater than 500 MPa.

7. The pressure sensor according to claim 1, wherein 2 to 16 of the diaphragms are provided on the same die.

8. The pressure sensor according to claim 1, wherein the metallic glass is one of a Zr-based metallic glass, a Pd-based metallic glass, a Pt-based metallic glass, an Au-based metallic glass, an Fe-based metallic glass, an Ni-based metallic glass, an Mg-based metallic glass, a Co-based metal glass, and a Cu-based metallic glass.

9. The pressure sensor according to claim 1, wherein the metallic glass includes one of Zr, Co, and CuZr as a main component.

10. A method of producing a pressure sensor according to claim 1, the method comprising: providing a plurality of holes in a layer to be the counter electrode; providing a sacrificial layer so as to fill the holes and be arranged on the layer to be the counter electrode; providing a metallic glass in the form of a layer on a part of the layer to be the counter electrode and the sacrificial layer; releasing the counter electrode, the sacrificial layer, and the metallic glass layer from the substrate by etching a back surface of the substrate; and removing the sacrificial layer.

11. The method according to claim 10, wherein the metallic glass is provided using a sputtering method.

12. The method according to claim 10, wherein the sacrificial layer is formed of a resin.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0046] FIG. 1 is a view showing a configuration of a microphone as a pressure sensor according to an embodiment of the present invention.

[0047] FIG. 2 is a view showing a diaphragm constituting a microphone according to an embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0048] FIG. 3A shows Step 1 relating to a method of producing a microphone according to an embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0049] FIG. 3B shows Step 2 relating to the method of producing the microphone according to the embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0050] FIG. 3C shows Step 3 relating to the method of producing the microphone according to the embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0051] FIG. 3D shows Step 4 relating to the method of producing the microphone according to the embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0052] FIG. 3E shows Step 5 relating to the method of producing the microphone according to the embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0053] FIG. 3F shows Step 6 relating to the method of producing the microphone according to the embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0054] FIG. 3G shows Step 7 relating to the method of producing the microphone according to the embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view.

[0055] FIG. 4 is a view showing a configuration of a microphone as a pressure sensor according to an embodiment of the present invention.

[0056] FIG. 5 is a view showing a configuration of a microphone as a pressure sensor different from that in FIG. 4 according to an embodiment of the present invention.

[0057] FIG. 6 is an AFM image of a PdCuSi metallic glass according to an example.

[0058] FIG. 7 is an AFM image of a ZrCuAlNi metallic glass according to an example.

[0059] FIG. 8 is a view showing a method of fabricating a diaphragm formed of a metallic glass through Step 1 to Step 5 according to an example.

[0060] FIG. 9 is a view showing a method of fabricating a diaphragm formed of a metallic glass different from that of FIG. 8 through Step 1 to Step 5 according to an example.

[0061] FIG. 10 is an SEM image of a diaphragm fabricated according to the example.

[0062] FIG. 11 is a view showing variations of the diaphragm.

DESCRIPTION OF EMBODIMENTS

[0063] Embodiments of the present invention will be described with reference to the drawings on the assumption that a pressure sensor is a microphone. The illustrated embodiments are one of the best modes for carrying out the present invention and modifications thereof are also within the scope of the present invention. The present invention can be applied not only to a case in which the pressure sensor is a microphone but also to a case in which the pressure sensor is an air pressure sensor or an ultrasonic sensor.

[Basic Structure and Producing Method Thereof]

[0064] FIG. 1 is a view showing a configuration of a microphone as a pressure sensor according to an embodiment of the present invention. As shown in FIG. 1, the microphone 10 according to the embodiment of the present invention includes a cylindrical support frame 11, a diaphragm 12 formed of a metallic glass, and a counter electrode 13. The support frame 11 has a cavity 11a, and the counter electrode 13 has a plurality of perforation holes 13a. In the embodiment shown in FIG. 1, the diaphragm 12 and the counter electrode 13 face each other, and a displacement of the diaphragm 12 due to a sound pressure is measured as a capacitance and converted into a voltage by a readout circuit (not shown).

[0065] In the embodiment of the present invention, the diaphragm 12 is formed of a metallic glass film. Here, the reason the sensitivity is improved by forming the diaphragm of a metallic glass will be explained on the basis of material mechanics.

[0066] A capacitance C formed by the diaphragm 12 having an area A and the counter electrode 13 with a gap d therebetween is expressed by Equation 1, wherein .sub.0 is a dielectric constant of air. Here, when a DC voltage V.sub.DC is applied between the diaphragm 12 and the counter electrode 13, the gap d is reduced by x.sub.DC due to an electrostatic force, and a capacitance Co at that time is expressed by Equation 2. An electric charge Q.sub.DC accumulated at that time is expressed by Equation 3.

[00001]$\begin{array}{cc}\left[\mathrm{Math}..Math.1\right]& \\ C=\frac{A}{d}.Math.{\mathrm{.Math.}}_0& \left(\mathrm{Equation}.Math..Math.1\right)\\ \left[\mathrm{Math}..Math.2\right]& \\ C_0=\frac{A}{d-x_{\mathrm{DC}}}.Math.{\mathrm{.Math.}}_0& \left(\mathrm{Equation}.Math..Math.2\right)\\ \left[\mathrm{Math}..Math.3\right]& \\ Q_{\mathrm{DC}}=C_0.Math.V_{\mathrm{DC}}& \left(\mathrm{Equation}.Math..Math.3\right)\end{array}$

[0067] When the sound pressure reaches the diaphragm 12 and thus the diaphragm 12 vibrates with a displacement of x.sub.AC, the displacement x of the diaphragm 12 is expressed by Equation 4, and a voltage V.sub.AC generated at that time is expressed by Equation 5. Assuming that an output current of the microphone 10 is an impedance Z.sub.1, it is indicated by a current I.sub.AC of Equation 6.

[00002]$\begin{array}{cc}\left[\mathrm{Math}..Math.4\right]& \\ x=d-x_{\mathrm{DC}}+x_{\mathrm{AC}}=d_0+x_{\mathrm{AC}}& \left(\mathrm{Equation}.Math..Math.4\right)\\ \left[\mathrm{Math}..Math.5\right]& \\ V_{\mathrm{AC}}=\frac{d_0}{{\mathrm{.Math.}}_0.Math.A}.Math.Q_{\mathrm{DC}}+\frac{x_{\mathrm{AC}}}{{\mathrm{.Math.}}_0.Math.A}.Math.Q_{\mathrm{DC}}& \left(\mathrm{Equation}.Math..Math.4\right)\\ \left[\mathrm{Math}..Math.6\right]& \\ I_{\mathrm{AC}}=\frac{V_{\mathrm{AC}}}{Z_I}& \left(\mathrm{Equation}.Math..Math.6\right)\end{array}$

[0068] On the other hand, a deformation when a pressure P is applied to the diaphragm 12 can be estimated by an equation of material mechanics. A displacement x(r) at a position away from a center at a distance r is expressed by Equation 7, wherein a and t are a radius and a thickness of the diaphragm 12, respectively. Here, D is a flexural rigidity of the diaphragm 12 and is expressed by Equation 8. E is the Young's modulus of a material of the diaphragm 12, and is a Poisson's ratio of the material of the diaphragm 12. An average displacement x can be found by Equation 9:

[00003]$\begin{array}{cc}\left[\mathrm{Math}..Math.7\right]& \\ x\left(r\right)=\frac{{\mathrm{Pa}}^4}{64.Math.D}.Math.\left(1-\frac{r^2}{a^2}\right)={x_p\left(1-\frac{r^2}{a^2}\right)}^2& \left(\mathrm{Equation}.Math..Math.7\right)\\ \left[\mathrm{Math}..Math.8\right]& \\ D=\frac{{\mathrm{Et}}^3}{12.Math.\left(1-v^2\right)}& \left(\mathrm{Equation}.Math..Math.8\right)\\ \left[\mathrm{Math}..Math.9\right]& \\ x=\frac{{}_0^a.Math.2.Math..Math..Math.\mathrm{rx}\left(r\right).Math.\mathrm{dr}}{.Math..Math.a^2}=P.Math.\frac{a^4}{192.Math.D}=\frac{x_p}{3}& \left(\mathrm{Equation}.Math..Math.9\right)\end{array}$

[0069] x.sub.p is a displacement (the maximum displacement) at the center (r=0) of the diaphragm 12.

[0070] Hence, a relationship shown in Equation 10 can be obtained from Equation 6 and Equation 9.

[00004]$\begin{array}{cc}\left[\mathrm{Math}..Math.10\right]& \\ I_{\mathrm{AC}}x\frac{1}{D}\frac{\left(1-v^2\right)}{E}& \left(\mathrm{Equation}.Math..Math.10\right)\end{array}$

[0071] From this equation, it can be seen that, when dimensions are the same, the output current is roughly inversely proportional to the Young's modulus E of the material of the diaphragm 12. That is, the sensitivity is roughly inversely proportional to the Young's modulus E of the material of the diaphragm 12.

[0072] Table 1 shows a relative sensitivity of the microphones, one of which employs polysilicon as the material of the diaphragm 12, and the other of which employ PdSiCu and ZrCuAlNi which are metallic glass. Data on polysilicon (*) is cited from Non-Patent Document 9. Data on the metallic glasses (**) is cited from Non-Patent Document 10.

TABLE-US-00001 TABLE 1 PdSiCu ZrCuAlNi Polysilicon metallic glass metallic glass Young's modulus E [GPa] 16214 * 80 80.5 ** Poisson's ratio v 0.220.01 * 0.411 ** 0.375 ** [00005]$\frac{\left(1-v^2\right)}{\begin{array}{c}E\\ \left[{\mathrm{Pa}}^{-1}\right]\end{array}}$ ~5.910.sup.12 ~10.410.sup.12 ~10.710.sup.12

[0073] From Table 1, it can be seen that relative sensitivity ((1.sup.2)/E) roughly doubles when replacing polysilicon with a metallic glass.

[0074] Since the diaphragm 12 needs to withstand an excessive pressure or impact, a mechanical strength of the diaphragm 12 is also important. Table 2 shows tensile strengths of polysilicon, and PdSiCu and ZrCuAlNi as a metallic glass. Data on polysilicon (*) is cited from Non-Patent Document 9. Data on the metallic glasses (**) is cited from Non-Patent Document 10.

TABLE-US-00002 TABLE 2 PdSiCu ZrCuAlNi Polysilicon metallic glass metallic glass Tensile strength [GPa] 1.45 0.19 * 1.1 1.8 **

[0075] A metallic glass has a tensile strength equal to or higher than that of polysilicon. More importantly, a metallic glass is a ductile material and is less likely to break down due to an impact or stress concentration as compared with polysilicon, which is a brittle material. Therefore, it can be conceived that the diaphragm 12 will be able to be made thin while maintaining reliability by changing the material of the diaphragm 12 from polysilicon to a metallic glass. In other words, with the same diaphragm thickness, the reliability will be increased.

[0076] Next, frequency characteristics of the diaphragm 12 will be discussed. A first-bending resonant angular frequency .sub.0 of the diaphragm 12 is given by Equation 11, k.sub.1 being an equivalent spring constant of the diaphragm 12, m being an equivalent mass, and being a density:

[00006]$\begin{array}{cc}\left[\mathrm{Math}..Math.11\right]& \\ {}_0=\sqrt{\frac{k_1}{m}}-\frac{10.22}{\left(a^2.Math.\sqrt{\frac{.Math..Math.t}{D}}\right)}.Math..Math.\mathrm{wherein}& \left(\mathrm{Equation}.Math..Math.11\right)\\ \left[\mathrm{Math}..Math.12\right]& \\ k_1=\frac{192.Math..Math..Math.D}{a^2}& \left(\mathrm{Equation}.Math..Math.12\right)\end{array}$

[0077] Accordingly, when dimensions are the same, a ratio of a resonant frequency of the diaphragm formed of polysilicon to that of the diaphragm formed of a metallic glass is expressed by Equation 13.

[00007]$\begin{array}{cc}\left[\mathrm{Math}..Math.13\right]& \\ \frac{{}_{0.Math..Math.\mathrm{polySi}}.Math.}{{}_{0.Math..Math.\mathrm{TMG}}}=\sqrt{\frac{\frac{{}_{\mathrm{TMG}}}{D_{\mathrm{TMG}}}}{\frac{{}_{\mathrm{polySi}}}{D_{\mathrm{polySi}}}}}=\sqrt{\frac{\frac{{}_{\mathrm{TME}}\left(1-{}_{\mathrm{TMG}}^2\right)}{E_{\mathrm{TMG}}}}{\frac{{}_{\mathrm{polySi}}\left(1-v_{\mathrm{polySi}}^2\right)}{E_{\mathrm{polySi}}}}}& \left(\mathrm{Equation}.Math..Math.13\right)\end{array}$

[0078] Table 3 shows the density, the relative sensitivity ((1.sup.2)/E), and the resonant frequency ratio for polysilicon, and PdSiCu and ZrCuAlNi as a metallic glass. Data on the metallic glasses (**) is cited from Non-Patent Document 10.

TABLE-US-00003 TABLE 3 PdSiCu ZrCuAlNi Polysilicon metallic glass metallic glass Density [kg/m.sup.3] 2.310.sup.3 10.410.sup.3 ** 6.6710.sup.3 ** [00008]$\frac{\left(1-v^2\right)}{E}$ ~5.910.sup.12/Pa ~10.410.sup.12/Pa ~10.710.sup.12/Pa [00009]$\frac{{}_{0.Math..Math.\mathrm{polySi}}}{{}_{0.Math..Math.\mathrm{TMG}}}$ 1 2.8 2.3

[0079] In Table 3, the sensitivity of a metallic glass as the pressure sensor is approximately double as compared with that of polysilicon, but the resonant frequency falls in a range of to , when each diaphragm is produced with the same dimensions. When the pressure sensor is used as a microphone, there is a possibility that the resonant frequency may come within a sound frequency range, which may cause a problem depending on a design. Therefore, when a diaphragm of a microphone is produced using a metallic glass, it is necessary to optimize dimensions depending on material properties. As can be seen from Equations 7, 8 and 11, when a thickness is multiplied by X while maintaining the resonant frequency of the diaphragm, a radius a of the diaphragm becomes X times, and thus the relative sensitivity becomes 1/X times. From this, it can be seen that the sensitivity can be improved by thinning the diaphragm and making the diaphragm smaller accordingly. However, it is necessary to ensure sufficient pressure resistance even when the diaphragm becomes thinner.

[0080] Here, when a specific design is made on the basis of the material mechanics with regard to a diaphragm formed of a Zr.sub.53Ti.sub.5Cu.sub.20Ni.sub.12Al.sub.10 metallic glass, approximately the same resonant frequency and pressure resistance can be obtained by making the thickness 0.33 times and the diameter 0.39 times as compared with those of the polysilicon diaphragm. It is noted here that the relative sensitivity is almost the same (1.03 times) as compared with that of the polysilicon diaphragm. On the other hand, an area of the diaphragm is approximately 0.15 times, and thus it is possible to greatly reduce a size of the die while maintaining the sensitivity.

[0081] In the above-described design, since the diaphragm is greatly reduced in size, a plurality of diaphragms can be mounted on the same die. In addition, diaphragms of M rowsN columns in a matrix can also be disposed on the same die. For example, when diaphragms of 2 rows4 columns are disposed on the same die, the area of the die is increased only by approximately 20%, whereas the sensitivity improves to more than 8 times. Further, when the pressure sensor according to the present invention is used as an ultrasonic sensor, a phased array can be obtained using a plurality of diaphragms, which allows to measure a distance and an orientation of an object by ultrasonic waves.

[0082] Further, according to the present invention, the thickness of the diaphragm may be varied within the diaphragm. For example, a thick portions forming a honeycomb shape, a lattice shape, a radial shape, a concentric circle shape, or combinations thereof may be arranged to improve the sensitivity while the resonant frequency and the mechanical strength are kept high.

[0083] FIG. 2 is a view showing a diaphragm 21 constituting a microphone 20 according to an embodiment of the present invention, wherein an upper view shows a plan view and a lower view shows a cross-sectional view. The microphone 20 includes a MEMS die 22, a substrate 24 having a cavity 23, a counter electrode 26 having a plurality of perforation holes 25 on the substrate 24, and a diaphragm 21, in which at least the diaphragm 21 and the counter electrode 26 are insulated from each other. In the diaphragm 21, the thick portion 21a is arranged in the form of a honeycomb and defines thin portions 21b. A ratio of a thickness of the thick portion 21a to a thickness of the thin portions 21b may be 2 to 3 times. The perforation holes 25 and the thick portion 21a may face each other or the thick portion may be formed on the opposite side of the diaphragm 21. Accordingly, even when the diaphragm 21 is formed of the metallic glass, it is possible to ensure durability.

[0084] The rigidity of the diaphragm and the resonant frequency associated therewith also change according to a stress of the diaphragm. Therefore, one of parameters which control the characteristics of the diaphragm is the stress. One of the methods for solving the problem of the resonant frequency reduction is to give a tensile stress to the diaphragm such that the resonant frequency of the metallic glass diaphragm is approximately equal to the resonant frequency of the Si diaphragm. The resonant frequency increases by pulling the diaphragm. A tensile stress of 0 to 500 MPa is preferable. There is a concern that the diaphragm may tend to break due to the tensile stress, but within the above-described range of the tensile stress the concern can be solved due to excellent mechanical properties of the metallic glass.

[0085] FIGS. 3A to 3G are views showing a method of producing a microphone 30 according to an embodiment of the present invention. In each of FIGS. 3A to 3G, the upper view shows a plan view, and the lower view shows a cross-sectional view along line A-A.

[0086] In Step 1, a substrate 31 having a layer (referred to as counter electrode layer) 31c which serves as a counter electrode is prepared. Specifically, as shown in FIG. 3A, an SOI substrate 31 is prepared, the SOI substrate having an SiO.sub.2 layer 31b on an Si substrate 31a and also having an Si semiconductor layer 31c on the SiO.sub.2 layer 31b.

[0087] In Step 2, a plurality of holes (perforation holes) 32 are provided in the counter electrode layer 31c. Specifically, as shown in FIG. 3B, the plurality of holes (perforation holes) 32 are provided in the Si semiconductor layer 31c on the surface of the SOI substrate 31 by etching. Further, each corner portion of the Si semiconductor layer 31c is etched in a rectangular shape to expose the SiO.sub.2 layer 31b.

[0088] In Step 3, a sacrificial layer 33 is provided so as to fill the holes 32 and be arranged on the counter electrode layer 31c. Specifically, as shown in FIG. 3C, the sacrificial layer 33 formed of a resin (a photoresist) is provided to fill the holes 32 and be arranged on the Si semiconductor layer 31c. If necessary, the surface of the resin is planarized by reflow.

[0089] In Step 4, a metallic glass is provided in the form of a layer on a part of the counter electrode layer 31c and on the sacrificial layer 33. Specifically, as shown in FIG. 3D, a metallic glass layer 34 is provided on a part of the Si semiconductor layer 31c and on the sacrificial layer 33. Here, the metallic glass can be formed in a film shape by sputtering. A part of the metallic glass layer 34 is provided on the SiO.sub.2 layer 31b to be a support portion 34a. When it is desired to change the thickness of the diaphragm according to a location, a photoresist is patterned on the existing metallic glass, and a metallic glass is deposited thereon by sputtering and then lifted off.

[0090] Next, the counter electrode, the sacrificial layer 33, and the metallic glass layer 34 are released from the substrate 31 by etching the back surface of the substrate 31.

[0091] Specifically, in Step 5, as shown in FIG. 3E, a part of the Si substrate 31a on the back side of the SOI substrate 31 is removed by etching to form a part 35a of the cavity.

[0092] In Step 6, as shown in FIG. 3F, the substrate 31 is removed to the back surface of the Si semiconductor layer 31c to form the cavity 35.

[0093] In Step 7, as shown in FIG. 3G, the sacrificial layer 33 is removed by oxygen ashing, etching with an organic solvent, or atomic hydrogen etching to release the diaphragm 36.

[0094] Since this series of processes does not use a high-temperature process and uses a low-temperature film-forming process, it is possible to easily integrate a circuit on the microphone.

[0095] The above-described example employs PdSiCu or ZrCuAlNi as the metallic glass, but it may be any one of a Zr-based metallic glass, a Pd-based metallic glass, a Pt-based metallic glass, an Au-based metallic glass, an Fe-based metallic glass, an Ni-based metallic glass, an Mg-based metallic glass, a Co-based metal glass, and a Cu-based metallic glass.

[0096] Examples of Zr-based metallic glasses include Zr.sub.53Ti.sub.5Cu.sub.20Ni.sub.12Al.sub.10, Zr.sub.55Cu.sub.30Al.sub.10Ni.sub.5, Zr.sub.75Cu.sub.19Al.sub.16, and the like.

[0097] Examples of Pd-based metallic glasses include Pd.sub.40Ni.sub.10Cu.sub.30P.sub.20, Pd.sub.78Cu.sub.6Si.sub.16, and the like.

[0098] Examples of the Pt-based metallic glasses include Pt.sub.58Cu.sub.15Ni.sub.5P.sub.23, and the like.

[0099] Examples of the Au-based metallic glasses include Au.sub.49Ag.sub.6Pd.sub.2Cu.sub.27Si.sub.16, and the like.

[0100] Examples of the Fe-based metallic glasses include Fe.sub.76Si.sub.9B.sub.10P.sub.5, and the like.

[0101] Examples of the Ni-based metallic glasses include Ni.sub.60Nb.sub.15Ti.sub.20Zr.sub.5, and the like.

[0102] Examples of the Mg-based metallic glasses include Mg.sub.57Cu.sub.34Nd.sub.9, Mg.sub.64Ni.sub.21Nd.sub.15, and the like.

[0103] Examples of the Co-based metallic glasses include Co.sub.56Ta.sub.9B.sub.35, and the like.

[0104] Examples of the Cu-based metallic glasses include Cu.sub.50Zr.sub.50, Cu.sub.50Zr.sub.45Al.sub.5, and the like.

[0105] These metallic glasses can be formed in a film shape by a sputtering method.

[0106] The metallic glass may contain Zr as a main element. This is because not only are the tensile strength high, the density low, and the mechanical properties excellent, but also a raw material can be obtained cheaply as compared with a metallic glass containing Pd, Au, or Pt as a main component and the manufacturing cost is reduced. Also, since it has no magnetism, it will not be affected by magnetic noise. A Co-based metallic glass and a Cu-based metallic glass have high strength (specific strength) with respect to the density, and the former has particularly high strength.

Specific Embodiment

[0107] FIG. 4 is a view showing a configuration of a microphone as a pressure sensor according to an embodiment of the present invention. A microphone 40 as a specific pressure sensor of the present invention is configured by mounting a die 42 on a base 41 of a package. The die 42 includes a substrate 42a, a counter electrode 43, and a diaphragm 44 having a MEMS structure and formed of a metallic glass. The die 42 includes a readout circuit 45. The diaphragm 44 on the die 42 is connected to the readout circuit 45, and the readout circuit 45 is connected to the base 41 by a wiring 46 such as wire bonding.

[0108] Accordingly, a sound wave reaches the diaphragm 44, the diaphragm 44 is displaced, and a capacitance change caused by the displacement can be read out by the readout circuit 45.

[0109] FIG. 5 is a diagram showing a configuration of a microphone as a specific pressure sensor according to an embodiment of the present invention which is different from FIG. 4. The microphone 50 as a pressure sensor is configured by mounting a die 52 on a base 51 of a package. A sound hole 51a is formed in the base 51. The die 52 includes a substrate 52a, a counter electrode 53, and a diagram 54 having a MEMS structure and formed of a metallic glass. The die 52 includes a readout circuit 55. A vibration signal of the diaphragm 54 is output to the readout circuit 55. In FIG. 5, a wiring 51b is formed on the base 51, bumps 56 are mounted on the wiring 51b, and each of the bumps 56 is connected to the diaphragm 54 and the readout circuit 55. If necessary, a gap between the base 51 of the package and the die 52 is sealed with a sealing material 57 such as a resin so that the sound pressure does not leak out.

[0110] Hereinafter, the present invention will be described more specifically with reference to examples.

Examples

[0111] First, PdCuSi and ZrCuAlNi are selected as new materials for a MEMS microphone. Although it is known conventionally that a metallic glass film can be deposited by a sputtering method, it is not common as a MEMS material, film stress control is not easy, there has been no idea for applying it to a MEMS microphone in which the film stress needs to be precisely controlled between zero stress and an appropriate tensile stress, and thus a possibility thereof has also not been disclosed. The inventors have conducted fundamental studies and found that the metallic glass deposited by a sputtering method can be applied to a MEMS microphone.

[0112] A PdCuSi metallic glass was deposited by a sputtering method under the following conditions. In the sputtering, a high-frequency power was set to 100 W, an Ar gas flow rate was set to 10 sccm, a deposition pressure was set to 1.34 Pa, a deposition time was set to 50 minutes, one cycle was 300 seconds, and a cool-down time was 300 seconds. A rotation speed of the substrate was set to 20 rpm. A deposition rate of the PdCuSi metallic glass was 16.6 nm/min. Thereafter, annealing was performed between 350 C. and 410 C. to adjust the film stress such that it was within the above-described range.

[0113] FIG. 6 is an AFM image of the PdCuSi metallic glass. From this image, it was found that the surface roughness Ra was about 0.1 nm and a sufficiently smooth metallic glass thin film was formed.

[0114] A ZrCuAlNi metallic glass was deposited by a sputtering method under the following conditions. In the sputtering, the high-frequency power was set to 100 W, the Ar gas flow rate was set to 15 sccm, the deposition pressure was set to 0.4 Pa, the deposition time was set to 60 minutes, one cycle was 300 seconds, and the cool-down time was 300 seconds. The substrate was not rotated. The deposition rate of the ZrCuAlNi metallic glass was 11.83 nm/min. Thereafter, annealing was performed between 400 C. and 480 C. to adjust the film stress within the above-described range.

[0115] FIG. 7 is an AFM image of the ZrCuAlNi metallic glass. From this image, it was found that the surface roughness Ra was about 0.2 nm and a sufficiently smooth metallic glass thin film was formed.

[0116] Next, for testing a MEMS microphone structure, a metallic glass diaphragm was experimentally produced as follows. FIG. 8 is a view showing a method of producing a metallic glass diaphragm as an example.

[0117] In Step 1, a photoresist 62 was deposited as a sacrificial layer on the Si substrate 61 and patterned.

[0118] In Step 2, the photoresist 62 was reflowed by heating.

[0119] In Step 3, a metallic glass film 63 was deposited, and a mask 64 was patterned on the back surface of the substrate. When it is desired to change the thickness of the diaphragm according to a location, a patterned metallic glass film is formed thereon by a lift-off method using a photoresist.

[0120] In Step 4, Si of the substrate 61 was etched to form a cavity 65.

[0121] In Step 5, the photoresist 62 as the sacrificial layer and the mask 64 were removed by oxygen ashing or acetone.

[0122] FIG. 9 is a view showing another method of experimentally producing the metallic glass diaphragm as an example.

[0123] In Step 1, both surfaces of the Si substrate 71 were oxidized into SiO.sub.2 layers 72 and 73, and the SiO.sub.2 layer 72 on one surface thereof was patterned.

[0124] In Step 2, patterning was performed so that a photoresist 74 was provided in the hole on the side provided with the SiO.sub.2 layer 72, and then reflowing was performed.

[0125] In Step 3, a metallic glass film 75 was deposited by a sputtering method.

[0126] In Step 4, the SiO.sub.2 layer 73 on the back side was patterned.

[0127] In Step 5, a part of the Si substrate 71 was etched with KOH to form a cavity 76, and the photoresist 74 was removed.

[0128] FIG. 10 is an SEM image of the diaphragm produced in the example. It was found that the diaphragm was produced as designed. In addition, it was confirmed that the diaphragm had a high mechanical strength without being damaged even when a pressure flow was applied by an air nozzle.

[0129] In the foregoing, embodiments and examples of the present invention have been described by exemplifying a microphone as a pressure sensor. That is, referring to FIG. 1, the microphone 10 as a pressure sensor according to the embodiment of the present invention includes the support frame 11 having the cavity 11a, the diaphragm 12 formed of a metallic glass and having a tensile stress in a range in which the resonant frequency is higher than an audible range, and the counter electrode 13 insulated from the diaphragm 12 and having a plurality of holes, the diaphragm 12 and the counter electrode 13 are provided on the silicon substrate to face each other with a gap therebetween, and the diaphragm 12 and the counter electrode 13 are released from the silicon substrate by the cavity 11a. The support frame 11 is constituted with a silicon-based substrate.

[0130] Therefore, according to the embodiments of the present invention, unlike a diaphragm formed as a silicon-based material, when a diaphragm is produced with the same dimensions, the resonant frequency falls in the range from to . In order to minimize this decrease, a size and a thickness of the diaphragm are set to be smaller than the case in which the diaphragm is formed of a conventional silicon-based film, and the diaphragm is formed to have a tensile stress. Here, the resonant frequency of the diaphragm is in a range of 20 kHz to 60 kHz, particularly preferably in a range of 40 kHz to 50 kHz. This is to suppress the resonant in the audible range and to obtain frequency characteristics which are as flat as possible. Further, in order to deal with this, the size of the diaphragm is in a range of 50 to 80%, particularly preferably 65 to 75%, as compared with that of polysilicon, the thickness is to of that of the Si diaphragm, and it is on the order of several hundred nm. This is because the strength and the sensitivity can then be compatible with each other while the resonant frequency is set in a desirable range within this range. The diaphragm has a tensile stress in a range of 0 to 500 MPa, particularly preferably 0 to 100 MPa. This is because the diaphragm is kept flat in this range, the resonant frequency is in a desirable range, and better sensitivity and strength can be secured.

[0131] The pressure sensor according to the embodiment of the present invention can be applied not only to a microphone but also to a pressure sensor such as an air pressure sensor or an ultrasonic sensor. Particularly, when a weak pressure is measured by a displacement of the diaphragm, ready deformation and maintaining of the mechanical strength of the diaphragm can be achieved by forming the diaphragm of the metallic glass. The embodiment of the present invention is not limited to the above-described matters and may be as follows, for example.

[0132] The illustrated diaphragm may be disposed on the back side of the back plate (the counter electrode), but a positional relationship between the diaphragm and the counter electrode may be reversed in an up-down direction.

[0133] The diaphragm may be fixed to a frame body at one or more locations, and a peripheral edge of the diaphragm may be fixed in a circumferential manner.

[0134] The diaphragm may have a uniform thickness, or may partially have a thick portion as shown in FIG. 2. Further, as shown in FIG. 11, slits 61, 71, and 81 may be provided in the diaphragms 60, 70, and 80 to divide the diaphragm into two, three, four, or more portions. In this case, the diaphragm is supported in a cantilevered manner. Further, the diaphragm may have various shapes such as a circular shape, a rectangular shape, or the like in planar view.

REFERENCE SIGNS LIST

[0135] 10 Microphone [0136] 11 Support frame [0137] 12 Diaphragm [0138] 13 Counter electrode [0139] 13a Perforation hole [0140] 20 Microphone [0141] 21 Diaphragm [0142] 22 MEMS die [0143] 23 Cavity [0144] 24 Substrate [0145] 25 Perforation hole [0146] 26 Counter electrode [0147] 21a Thick portion [0148] 21b Thin portion [0149] 30 Microphone [0150] 31 Substrate (SOI substrate) [0151] 31a Substrate [0152] 31b SiO.sub.2 layer [0153] 31c Counter electrode (semiconductor layer) [0154] 32 Hole (perforation hole) [0155] 33 Sacrificial layer [0156] 34 Metallic glass layer [0157] 34a Support portion [0158] 35 Cavity [0159] 35a Part of cavity [0160] 36 Diaphragm [0161] 40 Microphone [0162] 41 Base of package [0163] 42 Die [0164] 42a Substrate [0165] 43 Counter electrode [0166] 44 Diaphragm [0167] 45 Readout circuit [0168] 46 Wiring [0169] 50 Microphone [0170] 51 Base of package [0171] 51a Sound hole [0172] 51b Wiring [0173] 52 Die [0174] 52a Substrate [0175] 53 Counter electrode [0176] 54 Diaphragm [0177] 55 Readout circuit [0178] 56 Bump [0179] 57 Sealing material (resin) [0180] 60, 70, 80 Diaphragm [0181] 61, 71, 81 Slit