MEMS multi-module assembly, manufacturing method and electronics apparatus
10433042 ยท 2019-10-01
Assignee
Inventors
Cpc classification
H04R1/04
ELECTRICITY
B81B2201/0257
PERFORMING OPERATIONS; TRANSPORTING
G01L9/0001
PHYSICS
G01L19/0092
PHYSICS
B81B7/02
PERFORMING OPERATIONS; TRANSPORTING
H04R2499/11
ELECTRICITY
H01L25/00
ELECTRICITY
B81B2207/012
PERFORMING OPERATIONS; TRANSPORTING
International classification
H04R1/04
ELECTRICITY
G01L9/00
PHYSICS
H01L25/00
ELECTRICITY
G01L19/00
PHYSICS
B81B7/02
PERFORMING OPERATIONS; TRANSPORTING
B81B7/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A MEMS multi-module assembly, manufacturing method, and electronics apparatus are disclosed herein. The MEMS multi-module assembly comprises: a first die having a first hole; and a second die stacked on the first die, having a second MEMS device, wherein the second MEMS device is connected outside via the first hole.
Claims
1. A MEMS (Micro Electromechanical System) multi-module assembly, comprising: a first die having a first MEMS device and a first hole; a second die stacked on the first die with a first space formed therebetween, the second die having a second MEMS device with a second hole, and a third die stacked on the second die having a third MEMS device, a second space being formed between the second die and the third die, wherein the first MEMS device is in communication with an area outside the assembly via the first hole and the first space, the second MEMS device is in communication with the area outside the assembly via the first hole, the first space, and the second hole, and the third MEMS device is in communication with the area outside the assembly via the first hole, the first space, the second hole, and the second space.
2. The MEMS multi-module assembly according to claim 1, wherein the first die has a pad on the side opposite to the second die.
3. The MEMS multi-module assembly according to claim 1, wherein the third die has a pad on the side opposite to the second die.
4. The MEMS multi-module assembly according to claim 1, wherein the first die and the second die are bonded through at least one of metal-metal thermal-compression bond, metal/alloy eutectic bond, or electric-conductive adhesive bond.
5. The MEMS multi-module assembly according to claim 1, wherein the second die and the third die are bonded through at least one of metal-metal thermal-compression bond, metal/alloy eutectic bond, or electric-conductive adhesive bond.
6. The MEMS multi-module assembly according to claim 1, wherein the first die and the second die are vertically electrically interconnected by through silicon via.
7. The MEMS multi-module assembly according to claim 1, wherein the second die and the third die are vertically electrically interconnected by through silicon via.
8. A method for manufacturing a MEMS (Micro Electromechanical System) multi-module assembly, comprising: forming a first wafer, wherein the first wafer has at least one first MEMS device and has at least one first hole; forming a second wafer, wherein the second wafer has at least one second MEMS device with at least one second hole; stacking the second wafer onto the first wafer with a first space formed therebetween; and forming a third wafer, wherein the third wafer has at least one third MEMS device; stacking the third wafer onto the second wafer with a second space formed therebetween; and singulating the wafers at a wafer level, to form a MEMS multi-module assembly, wherein each wafer is singulated into at least one die, wherein the first MEMS device is in communication with an area outside the assembly via the first hole and the first space, the second MEMS device is in communication with the area outside the assembly via the first hole, the first space, and the second hole, and the third MEMS device is in communication with the area outside the assembly via the first hole, the first space, the second hole, and the second space.
9. The method according to claim 8, further comprising: forming a pad on the first wafer at the side opposite to the second wafer.
10. The method according to claim 8, further comprising: forming a pad on the third wafer at the side opposite to the second wafer.
11. The method according to claim 8, further comprising: bonding the first wafer and the second wafer through at least one of metal-metal thermal-compression bond, metal/alloy eutectic bond, or electric-conductive adhesive bond.
12. The method according to claim 8, further comprising: bonding the second wafer and the third wafer through at least one of metal-metal thermal-compression bond, metal/alloy eutectic bond, or electric-conductive adhesive bond.
13. The method according to claim 8, further comprising: vertically electrically interconnecting the first wafer and the second wafer by through silicon via.
14. The method according to claim 8, further comprising: vertically electrically interconnecting the second wafer and the third wafer by through silicon via.
Description
BRIEF DESCRIPTION OF THE FIGURES
(1) The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description thereof, serve to explain the principles of the invention.
(2)
(3)
(4)
(5)
(6)
DETAILED DESCRIPTION OF VARIOUS EMBODIMENTS
(7) Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
(8) The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
(9) Techniques, methods and apparatus as known by one of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
(10) In all of the examples illustrated and discussed herein, any specific values should be interpreted to be illustrative only and non-limiting. Thus, other examples of the exemplary embodiments could have different values.
(11) Notice that similar reference numerals and letters refer to similar items in the following figures, and thus once an item is defined in one figure, it is possible that it need not be further discussed for following figures.
First Embodiment
(12)
(13) As shown in
(14) The first die 201 has a first hole 206. The first die 201 has a finished first MEMS device 208. Besides, the first die 201 can further have a first ASIC 205.
(15) The second die 202 is stacked on the first die 201. The second die 202 has a second MEMS device 210.
(16) In the present invention, at least two dies are arranged in a manner of stack, at least one of which has a MEMS device. This arrangement can reduced the package size.
(17) For example, the second MEMS device 210 is connected outside via the first hole 206. The second MEMS device 210 is, for example, a device that shall be connected outside during operation, such as MEMS microphone. The second MEMS device 210 includes a back chamber 211. In such a situation, the arrangement according to the present invention is advantageous. According to the arrangement of this invention, the package size can be reduced and the connection between the MEMS device and the outside can be maintained.
(18) For example, the first MEMS device 208 can also be connected outside via the first hole 206. The first MEMS device 208 is, for example, a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. In such a situation, the arrangement according to the present invention is advantageous. According to the arrangement of this invention, the package size can be reduced and at least two MEMS devices share the same hole to connect outside.
(19) For example, the first die 201 and the second die 202 are bonded through bonding layer 209 such as metal-metal (AuAu, AlAl, CuCu and so on) thermal-compression bond, metal/alloy eutectic bond, and/or electric-conductive adhesive bond.
(20) The first die 201 can include pads 204. The pads 204 can be located on the first die at the side opposite to the second die. The first die 201 and the second die 202 are vertically electrically interconnected by a through silicon via 207. The through silicon via 207 is connected to the pad 204.
(21) The MEMS multi-module assembly can be used in an electronics apparatus directly or can be used after a further encapsulation.
Second Embodiment
(22)
(23) As shown in
(24) The first die 301 has a first hole 306. The first die 301 has a finished first MEMS device 313. Besides, the first die 301 can further have a first ASIC 314.
(25) The first die 301 and the second die 302 are stacked. The second die 302 has a second MEMS device 310.
(26) For example, the second MEMS device 310 is connected outside via the first hole 306. The second MEMS device 310 is, for example, a device that shall be connected outside during operation, such as MEMS microphone. The second MEMS device 310 includes a back chamber 311. In such a situation, the arrangement according to the present invention is advantageous. According to the arrangement of this invention, the package size can be reduced and the connection between the MEMS device and the outside can be maintained.
(27) For example, the first MEMS device 313 can also be connected outside via the first hole 306. The first MEMS device 313 is, for example, a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. In such a situation, the arrangement according to the present invention is advantageous. According to the arrangement of this invention, the package size can be reduced and at least two MEMS devices share the same hole to connect outside.
(28) For example, the first die 301 and the second die 302 are bonded through bonding layer 309 such as metal-metal thermal-compression bond, metal/alloy eutectic bond, and/or electric-conductive adhesive bond.
(29) The first die 301 can include pads 304. The pads 304 can be located on the first die at the side opposite to the second die. The first die 301 and the second die 302 are vertically electrically interconnected by a through silicon via 307. The through silicon via 307 is connected to the pad 204.
(30) The MEMS multi-module assembly can be used in an electronics apparatus directly or can be used after a further encapsulation.
(31)
Third Embodiment
(32)
(33) The second die 402 is stacked on the first die 401. The second die 402 has a second MEMS device 410.
(34) For example, the second MEMS device 410 is connected outside via the first hole 406. The second MEMS device 410 is, for example, a device that shall be connected outside during operation, such as MEMS microphone. The second MEMS device 410 includes a back chamber 411. In such a situation, the arrangement according to the present invention is advantageous. According to the arrangement of this invention, the package size can be reduced and the connection between the MEMS device and the outside can be maintained.
(35) For example, the first MEMS device 408 can also be connected outside via the first hole 406. The first MEMS device 408 is, for example, a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. In such a situation, the arrangement according to the present invention is advantageous.
(36) The third die 403 is stacked on the second die 402. The third die 403 contains a third MEMS device 413 and a third ASIC 414. For example, the third MEMS device 413 is, for example, a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. As shown in
(37) For example, the first die 401 and the second die 402 are bonded through bonding layer 409 such as metal-metal (AuAu, AlAl, CuCu and so on) thermal-compression bond, metal/alloy eutectic bond, and/or electric-conductive adhesive bond. Similarly, for example, the second die 402 and the third die 403 are bonded through bonding layer 412 such as metal-metal (AuAu, AlAl, CuCu and so on) thermal-compression bond, metal/alloy eutectic bond, and/or electric-conductive adhesive bond.
(38) The first die 401 can include pads 404. The pads 404 can be located on the first die at the side opposite to the second die. The first die 401 and the second die 402 are vertically electrically interconnected by a through silicon via 407. The through silicon via 407 is connected to the pad 404. Similarly, as shown in
(39) The MEMS multi-module assembly can be used in an electronics apparatus directly or can be used after a further encapsulation.
Fourth Embodiment
(40)
(41)
(42) The second die 502 and the first die 501 are stacked. The second die 502 has a second MEMS device 510.
(43) For example, the second MEMS device 510 is connected outside via the first hole 506. The second MEMS device 510 is, for example, a device that shall be connected outside during operation, such as MEMS microphone. The second MEMS device 510 includes a back chamber 511. In such a situation, the arrangement according to the present invention is advantageous. According to the arrangement of this invention, the package size can be reduced and the connection between the MEMS device and the outside can be maintained.
(44) For example, the first MEMS device 513 can also be connected outside via the first hole 506. The first MEMS device 513 is, for example, a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. In such a situation, the arrangement according to the present invention is advantageous.
(45) The third die 503 and the second die 502 are stacked (at the side opposite to the first die). The third die 503 contains a third MEMS device 508 and a third ASIC 505. For example, the third MEMS device 508 is, for example, a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. As shown in
(46) For example, the first die 501 and the second die 502 are bonded through bonding layer 512 such as metal-metal (AuAu, AlAl, CuCu and so on) thermal-compression bond, metal/alloy eutectic bond, and/or electric-conductive adhesive bond. Similarly, for example, the second die 502 and the third die 503 are bonded through bonding layer 509 such as metal-metal (AuAu, AlAl, CuCu and so on) thermal-compression bond, metal/alloy eutectic bond, and/or electric-conductive adhesive bond.
(47) The third die 501 can include pads 504. The pads 504 can be located on the third die at the side opposite to the second die. The first die 501 and the second die 502 are vertically electrically interconnected by a through silicon via 507. The second die 502 and the third die 503 are vertically electrically interconnected by a through silicon via 507. The through silicon via 507 is connected to the pad 504.
(48) It shall be understood by a person skilled in the art that the above MEMS multi-module assembly can be used in an electronics apparatus directly or can be used after a further encapsulation.
Fifth Embodiment
(49)
(50) As shown in
(51) For example, the first MEMS device can be a device that shall be connected outside during operation, such as MEMS microphone, MEMS pressure sensor and so on. Alternatively, the first MEMS device is connected outside via the first hole.
(52) At step S6200, a second wafer is formed, wherein the second wafer has at least one second MEMS device.
(53) At step S6300, the second wafer is stacked onto the first wafer, wherein the second MEMS device is connected outside via the first hole.
(54) For example, a third wafer can be stacked onto the second wafer. The first, second and third wafers are all finished wafer.
(55) In an example, a pad is formed on the first wafer at the side opposite to the second wafer, for subsequent installation. In another example, a pad is formed on the third wafer at the side opposite to the second wafer, for subsequent installation.
(56) For example, the second wafer has at least one second hole, and the second hole can be located in the second MEMS device. The third wafer has at least one third MEMS device. The third MEMS device is connected outside via the first hole and the second hole.
(57) The first wafer and the second wafer can be bonded through at least one of metal-metal thermal-compression bond, metal/alloy eutectic bond, or electric-conductive adhesive bond. The second wafer and the third wafer can be bonded through at least one of metal-metal thermal-compression bond, metal/alloy eutectic bond, or electric-conductive adhesive bond.
(58) The first wafer and the second wafer can be vertically electrically interconnected by a through silicon via. The second wafer and the third wafer can be vertically electrically interconnected by a through silicon via.
(59) At step S6400, the wafers are singulated at a wafer level, to form a MEMS multi-module assembly, wherein each wafer is singulated into at least one dies.
Sixth Embodiment
(60) In the sixth embodiment, there is provided an electronics apparatus. The electronics apparatus comprises the MEMS multi-module assembly according to the present invention. The electronics apparatus can, for example, be a mobile phone, a pad, a smart watch, a smart glasses and so on. The electronics apparatus can include multiple MEMS devices, such as MEMS microphone, pressure sensor and so on. The present invention can reduce the package size of these devices, and thus the usage of this invention in these electronics apparatus is advantageous.
(61) It should be noted that the two expressions of a die/wafer is stacked on another die/wafer and a die/wafer and another die/wafer are stacked can be used in the same sense in the present invention.
(62) Although some specific embodiments of the present invention have been demonstrated in detail with examples, it should be understood by a person skilled in the art that the above examples are only intended to be illustrative but not to limit the scope of the present invention. It should be understood by a person skilled in the art that the above embodiments can be modified without departing from the scope and spirit of the present invention. The scope of the present invention is defined by the attached claims.