PHOTOELECTROCHEMICAL WATER SPLITTING DEVICE FOR SOLAR HYDROGEN GENERATION AND METHOD FOR FABRICATING THE SAME

Abstract

The invention refers to a hybrid device, monolithically integrating a photoanode with a silicon photovoltaic cell, capable of splitting water into hydrogen and oxygen when irradiated by visible or UV light; the invention also refers to a method for producing the hybrid device.

Claims

1. A hybrid device monolithically integrating a photoanode and a commercial silicon (Si) photovoltaic cell, characterized in that the photoanode is made of a InGaN layer epitaxially grown over a (111) crystallographic planes of p-type silicon, and in that quantum dots of InN are produced over an exposed surface of the InGaN layer, said quantum dots having a ratio of height/diameter lower than 0.25.

2. A hybrid device according to claim 1, wherein said InGaN layer is continuous on the silicon surface, and has a thickness between 10 and 100 nm.

3. A hybrid device according to claim 2, wherein said InGaN layer has a thickness between 50 and 60 nm.

4. A hybrid device according to claim 1, wherein said InN quantum dots have a thickness below 5 nm and a diameter between 20 and 30 nm.

5. A hybrid device according to claim 4, wherein said InN quantum dots have a thickness between 3 and 4 nm.

6. Method A method for producing a hybrid device according to claim 1, comprising the steps of: providing a commercial silicon photovoltaic cell comprising a layer of positively doped silicon (p-type Si) and a layer of negatively doped silicon (n-type Si), in which both layers have their main exposed surface corresponding to (100) crystallographic planes of the silicon crystal; processing the surface of said positively doped silicon layer of said silicon photovoltaic cell to change said surface into a textured surface that exposes facets corresponding to (111) planes of the silicon crystal structure; epitaxially producing a InGaN layer over said textured surface; epitaxially producing InN quantum dots over said InGaN layer.

7. The method according to claim 6 wherein, before carrying out the step of processing for obtaining said textured surface the p-type layer of the silicon photovoltaic cell is thinned.

8. The method according to claim 7 wherein said thinning is done by mechanical grinding.

9. The method according to claim 6, wherein the step of processing the surface of said positively doped silicon layer for obtaining said textured surface is carried out by anisotropic chemical etching or physical etching.

10. The method according to claim 9, wherein said anisotropic chemical etching is carried out with an aqueous solution of one or more alkali metal hydroxides, ammonium hydroxide, or mixtures thereof, optionally containing a monohydric, dihydric or polyhydric alcohol.

11. The method according to claim 10, wherein said etching solution is an aqueous solution of potassium hydroxide (KOH), at concentration of about 45% by weight.

12. The method according to claim 6, wherein said InGaN layer and said InN quantum dots are produced by molecular beam epitaxy or metalorganic vapor phase epitaxy.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The invention will be described in detail in the following with reference to FIG. 1, which shows the different stages of production of a hybrid device of the invention.

[0022] In the drawings, the size of the different parts is not in scale, and in particular the thickness of the film of InGaN and the size of the quantum dots of InN present over said film are greatly exaggerated for clarity of representation.

DETAILED DESCRIPTION OF THE INVENTION

[0023] In its first aspect, the invention refers to a hybrid device, monolithically integrating a photoanode with a silicon photovoltaic cell.

[0024] The photoanode is a film of InGaN formed on the photovoltaic cell, with quantum dots of InN formed on the surface of said film; in particular, the InGaN film is in contact with the positively doped silicon (p-type Si) face of the photovoltaic cell.

[0025] The InGaN film is continuous on the silicon surface, and has a thickness ranging between 10 and 100 nm, preferably between 50 and 60 nm.

[0026] The InN quantum dots (also abbreviated QDs in the following), on the other hand, are discontinuous structures produced over the InGaN surface. These QDs have a thickness below 5 nm, preferably between 3 and 4 nm, and a diameter between 20 and 30 nm; as generally the QDs are not perfectly circular, by diameter it is meant the length of the major axis of the dots.

[0027] The inventors have found that, for the aims of the present invention, the quantum dots must expose the crystallographic c-plane of the InN crystal; this condition is achieved by growing the QDs onto an InGaN film that in its turn exposes the corresponding c-plane of its crystalline structure.

[0028] Following their studies, the inventors have ascertained that the c-plane InN QDs surface contains a high density of intrinsic positively charged surface donors. These surface donors have transferred an electron to the semiconductor forming an electron surface accumulation layer therein. Hence oxidation of the surface, i.e., giving away more electrons is not possible, making the surface resistant against corrosion. As the c-plane has the largest density of positively charged surface donors it is the plane most resistant against corrosion. The condition set for the QDs in the present invention, namely, that these dots must have a ratio height/diameter of 0.25 or less, maximizes the c-plane exposed surfaces, making it possible to achieve a hybrid device with improved corrosion resistance compared to the cells of the prior art.

[0029] As the InGaN film is built on the silicon surface and has a very low thickness, it will reproduce the crystalline structure of the surface of the substrate it is built upon (epitaxial growth). Given the crystallographic structures of InGaN and Si, a growth of said film perpendicular to its c-axis (and thus exposing as surface the c-plane) requires that the underlying silicon surface is a (111) plane of the silicon crystal.

[0030] In a second aspect thereof, the invention is about a method for producing the hybrid device described above.

[0031] As said, the hybrid device is produced by treating a commercial silicon photovoltaic cell to change the crystallographic orientation of the exposed surface, first growing the InGaN layer over the so-treated silicon photovoltaic cell, and finally producing the InN QDs over said layer. The description of the procedure is made with reference to FIG. 1.

[0032] FIG. 1. A schematically shows a standard silicon photovoltaic cell (10). Said standard cell generally comprises a double layer of silicon, one (11) positively doped (p-type Si) and the other (12) negatively doped (n-type Si). For ease of production, both layers have their main (exposed) surface corresponding to the (100) crystallographic planes of the silicon crystal. However, as said, for the aims of the present invention the InGaN film must be grown over (111) surfaces of the silicon substrate, and in particular over the p-type side of the photovoltaic cell.

[0033] Accordingly, the first step of the process of the invention is the processing of the surface of a commercial silicon PV cell, exposing (100) planes of the silicon crystal structure, to transform said surface into one that exposes facets corresponding to (111) planes of the silicon crystal structure.

[0034] To obtain the necessary condition, the p-type (100) surface of the photovoltaic cell may be chemically etched in order to obtain a textured surface exposing silicon (111) planes. The result is represented in FIG. 1.B, in which is shown the textured surface, 13, made of a plurality of (111) facets 14. The etching must be anisotropic, namely, the etching rate must be different along the different crystallographic axes of the silicon crystal. This anisotropic etching can be obtained, for instance, with aqueous solutions of alkali metal hydroxides or ammonium hydroxide, optionally containing a monohydric, dihydric or polyhydric alcohol; a useful etching solution is an aqueous solution of potassium hydroxide (KOH), at concentration of about 45% by weight (weight of hydroxide/weight of resulting solution). The result is a new exposed surface, made of a plurality of pyramids whose facets correspond to (111) planes of the Si crystal. By chemical etching, the size and pitch of the pyramids is controlled by the etching conditions (alkali concentration and temperature).

[0035] Alternatively, the necessary texturing of the silicon surface can be achieved by means of lithographic approaches, allowing to obtain ordered structures and other arrangements like ridges, inverted pyramid arrays, and networks.

[0036] Following any of these techniques, the silicon surface will be formed of a series of (111) silicon facets.

[0037] Prior to texturing, the p-type side of the cell can be optionally (and preferably) thinned to enhance the transmission of light through it; in fact, in operation, light impinges on the substrate back side (p-type surface). Thinning may be done by mechanical grinding.

[0038] Once the silicon substrate is textured to expose (111) facets, the InGaN layer (15) is produced over textured surface 13 (FIG. 1.C). Preferred epitaxial growth techniques are molecular beam epitaxy and metalorganic vapor phase epitaxy. Finally, as shown in FIG. 1.D, the InN QDs, 16 are grown over the InGaN layer, obtaining the hybrid device of the invention, 17.

[0039] The methods and procedures for growing the InGaN layer and the InN QDs of desired thickness and size are known to the skilled persons; a possible example of growth of InNInGaN quantum dots on Si (111) is described in the reference P. E. D. Soto Rodriguez et al., Stranski-Krastanov InN/InGaN Quantum Dots Grown directly on Si(111), Applied Physics Letters 106, 023105 (2015), in the last paragraph starting on page 1 and continued on page 2.