METHOD FOR PREPARING POLYIMIDE FILM HAVING LOW DIELECTRIC CONSTANT AND HIGH FRACTURE TOUGHNESS
20190292338 ยท 2019-09-26
Assignee
Inventors
- Jianqing ZHAO (Guangzhou City, CN)
- Zhigeng CHEN (Guangzhou City, CN)
- Shumei LIU (Guangzhou City, CN)
- Sen ZHANG (Guangzhou City, CN)
Cpc classification
C08G73/1071
CHEMISTRY; METALLURGY
C08L79/08
CHEMISTRY; METALLURGY
C08J2383/10
CHEMISTRY; METALLURGY
C09D5/20
CHEMISTRY; METALLURGY
C09D183/08
CHEMISTRY; METALLURGY
C08J2379/08
CHEMISTRY; METALLURGY
C08G73/1042
CHEMISTRY; METALLURGY
C08G73/1039
CHEMISTRY; METALLURGY
C08F283/124
CHEMISTRY; METALLURGY
International classification
C09D5/20
CHEMISTRY; METALLURGY
C08G73/10
CHEMISTRY; METALLURGY
Abstract
The present invention discloses a method for preparing a polyimide film having a low dielectric constant and high fracture toughness. The method comprises: first preparing an aromatic diamine solution, and then grinding and well mixing a carbic anhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer and aromatic dianhydride; adding the mixture to the aromatic diamine solution, and then stirring to obtain a carbic anhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer/polyamide acid solution; uniformly applying the carbic anhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer/polyamide acid solution to a clean glass sheet, and then placing the glass sheet in a vacuum drying cabinet for treatment; cooling the treated glass sheet to room temperature and then putting same in water for ultrasonic peeling of a film, and vacuum drying the film to obtain a target product. The dielectric constant of the film obtained in the present invention is reduced to 2.2, the breaking elongation is increased by 272%, and the tensile energy is increased by 285%, so that the breaking elongation and tensile energy are greatly increased, and thus the fracture toughness is good.
Claims
1. A method for preparing a polyimide film having a low dielectric constant and high fracture toughness, comprising the steps of: (1) dissolving aromatic diamine in a polar organic solvent at an ambient humidity of lower than 50% under ice bath and nitrogen atmosphere, maintaining the mass concentration thereof at 6% to 10%; after the aromatic diamine is completely dissolved, further stirring for 25-35 min to obtain an aromatic diamine solution; wherein the aromatic diamine is 4,4-diaminodiphenyl ether, p-phenylenediamine or 4,4-diamino-2,2-bistrifluoromethylbiphenyl; (2) grinding and mixing norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer and aromatic dianhydride, adding to the aromatic diamine solution prepared in step (1) and stirring for 12 to 24 h to obtain a norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer/polyamic acid solution; wherein the molar ratio of the aromatic dianhydride and the aromatic diamine is 1:1, and the mass of the norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer is 1% to 6% of the total mass of the aromatic dianhydride and the aromatic diamine; (3) uniformly applying the norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer/polyamic acid solution prepared in step (2) on a clean glass sheet, then placing it in a vacuum drying oven to remove the bubbles under vacuum for 4-6 h; heating and maintaining the temperature according to the preset program, which comprises maintaining at 702 C. for 1.8-2.2 h, maintaining at 1202 C. for 1-1.2 h, maintaining at 1502 C. for 1.8-2.2 h, maintaining at 2002 C. for 1-1.2 h and maintaining at 3002 C. for 1-1.2 h; after that cooling to room temperature, peeling off a film by ultrasonic in water, then drying the film under vacuum to obtain the polyimide film having a low dielectric constant and high fracture toughness.
2. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 1, wherein the polar organic solvent in step (1) is one or more selected from the group consisting of N-methylpyrrolidone, N, N-dimethylformamide and tetrahydrofuran.
3. The method for producing a polyimide film having a low dielectric constant and high fracture toughness according to claim 1, wherein the norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer in step (2) is prepared by: dissolving norbornene dianhydride and maleimido heptaisobutyl polysilsesquioxane with a molar ratio of 2:1-4:1 in an inert solvent, keeping the total mass concentration of the norbornene dianhydride and the maleimido heptaisobutyl polysilsesquioxane between 15% and 20%, and adding azobisisobutyronitrile initiator; then vacuumizing, refilling with nitrogen, and repeatedly conducting vacuumizing and refilling with nitrogen; after that heating to 65-75 C. for free radical copolymerization, finishing the reaction after stirring for 12-24 h; pouring the obtained solution in methanol for precipitation of pale yellow precipitate; then conducting filtration, washing the residue with methanol repeatedly, and drying under vacuum to obtain a powdery norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer.
4. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 3, wherein the inert solvent is 1,4-dioxane, chlorobenzene, toluene or nitrobenzene.
5. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 3, wherein the amount of the azobisisobutyronitrile initiator is 0.1% to 1% of the total mass of the norbornene dianhydride and the maleimido heptaisobutyl polysilsesquioxane.
6. The method for producing a polyimide film having a low dielectric constant and high fracture toughness according to claim 3, wherein said repeatedly conducting vacuumizing and refilling with nitrogen refers to conducting for three or more times.
7. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 1, wherein the aromatic dianhydride in step (2) is 1,2,4,5-pyromellitic dianhydride, 3,3,4,4-biphenyltetracarboxylic dianhydride or 4,4-(hexafluoroisopropene) dinonanhydride.
8. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 1, when mixing the norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer and the aromatic dianhydride followed by adding to the aromatic diamine solution, they are firstly divided into four equal portions, and each portion is added at an interval of 25-35 min.
9. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 1, wherein the time for peeling off the polyimide film in water by ultrasonic in step (3) is 5-10 min.
10. The method for preparing a polyimide film having a low dielectric constant and high fracture toughness according to claim 1, wherein said drying the film under vacuum is conducted in an oven at 60-80 C. for more than 12 h
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0026]
[0027]
[0028]
[0029]
[0030]
[0031]
DETAILED DESCRIPTION WITH EMBODIMENTS
[0032] The present invention will be further described with reference to the accompanying drawings and embodiments, but the embodiments are not intended to limit the scope of the invention.
[0033] In the following examples, the norbornene dianhydride (NA), 4,4-diaminodiphenyl ether (ODA), p-phenylenediamine (PDA), 4,4-diamino-2,2-bistrifluoromethylbiphenyl (TFMB), 1,2,4,5-pyromellitic dianhydride (PMDA), 3,3,4,4-biphenyltetracarboxylic dianhydride (BPDA) and 4 4-(hexafluoroisopropene) diacetic anhydride (6FDA) are products of Shanghai Adamas Reagent Co., Ltd. (Adamas); the maleimido heptaisobutyl polysilsesquioxane (MIPOSS) is product of American Hybrid Plastics, whose structural formula is shown in
[0034] NMP is dehydrated before use. The specific method is as follows: adding appropriate amount of P.sub.2O.sub.5, sealing, leaving at room temperature for 12 hours, and then distilling under reduced pressure to obtain anhydrous NMP. Before the use of DMF or THF, appropriate amount of CaH was added and the mixture was stirred for 12 hours followed by decompressing distillation; ODA, PDA and TFMB were placed in a vacuum oven and dried under vacuum at 60 C. for 48 h; PMDA, BPDA and 6FDA were placed in a vacuum oven and dried under vacuum at 140 C. for 48 hours.
[0035] The glass piece (170 mm150 mm3 mm) was cleaned with deionized water and placed in an oven at 80 C. for 12 hours before use.
Example 1
[0036] (1) 10 mmol of norbornene dianhydride, 5 mmol of maleimido heptaisobutyl polysilsesquioxane, 6.5 mg of AIBN and 25.6 g of 1,4-dioxane were sequentially added to a 50 mL reaction flask and stirred for homogenization. Then the reaction flask was vacuumed, then filled with nitrogen. The vacuum and nitrogen filling steps were repeated for more than 3 times, then the reaction flask was placed in 75 C. constant temperature oil bath for 24 hours, after which the reaction was terminated; the solution was poured into about 300 mL of methanol for precipitation, then filtration was conducted to obtain a solid product, which was washed thoroughly with methanol, and then dried in an oven at 60 C. for 8 hours or more to obtain a powdery product, norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer, denoted as P(NA-alt-MIPOSS) with a structural formula shown in
[0037] (2) 0.1542 g of the P (NA-alt-MIPOSS) and 5 mmol of 6FDA were mixed and ground in a mortar to obtain a mixed acid anhydride;
[0038] (3) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of ODA, 10 g of DMF and 6.7 g of THF were added to a 50 mL three-necked flask until the ODA was completely dissolved. Then under mechanical stirring, the mixed acid anhydride obtained in step (2) was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution;
[0039] (4) The prepared P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution was poured onto a clean glass plate, coated homogeneously by an automatic coating machine, and placed in a vacuum drying oven to remove air bubbles under vacuum for 5 hours; according to the preset program, the temperature was raised to 70 C. for 2 hours, 120 C. for 1 hour, 150 C. for 2 hours, 200 C. for 1 hour, 300 C. for 1 hour for thermal imidization. After the treatment, the film was cooled to room temperature, peeled off in water for 5 minutes by ultrasonic, and was vacuum dried in an oven at 60 C. for 12 hours to obtain a 6FDA-ODA type PI film with a low dielectric constant and high fracture toughness. The thickness of the film is 68 m, and the theoretical content of P(NA-alt-MIPOSS) is 6 wt %. The structural formula of the PI film is as shown in
Example 2
[0040] (1) 10 mmol of norbornene dianhydride, 5 mmol of maleimido heptaisobutyl polysilsesquioxane, 6.5 mg of AIBN and 25.6 g of 1,4-dioxane were sequentially added to a 50 mL reaction flask and stirred for homogenization. Then the reaction flask was vacuumed, then filled with nitrogen. The vacuum and nitrogen filling steps were repeated for more than 3 times, then the reaction flask was placed in 75 C. constant temperature oil bath for 24 hours, after which the reaction was terminated; the solution was poured into about 300 mL of methanol for precipitation, then filtration was conducted to obtain a solid product, which was washed thoroughly with methanol, and then dried in an oven at 60 C. for 8 hours or more to obtain a powdery product, norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer, denoted as P(NA-alt-MIPOSS);
[0041] (2) 0.1028 g of the P (NA-alt-MIPOSS) and 5 mmol of 6FDA were mixed and ground in a mortar to obtain a mixed acid anhydride;
[0042] (3) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of ODA, 10 g of DMF and 6.7 g of THF were added to a 50 mL three-necked flask until the ODA was completely dissolved. Then under mechanical stirring, the mixed acid anhydride obtained in step (2) was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution;
[0043] (4) The prepared P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution was poured onto a clean glass plate, coated homogeneously by an automatic coating machine, and placed in a vacuum drying oven to remove air bubbles under vacuum for 5 hours; according to the preset program, the temperature was raised to 70 C. for 2 hours, 120 C. for 1 hour, 150 C. for 2 hours, 200 C. for 1 hour, 300 C. for 1 hour for thermal imidization. After the treatment, the film was cooled to room temperature, peeled off in water for 5 minutes by ultrasonic, and was vacuum dried in an oven at 60 C. for 12 hours to obtain a 6FDA-ODA type PI film with a low dielectric constant and high fracture toughness. The thickness of the film is 63 m, and the theoretical content of P(NA-alt-MIPOSS) is 4 wt %.
Example 3
[0044] (1) 10 mmol of norbornene dianhydride, 5 mmol of maleimido heptaisobutyl polysilsesquioxane, 6.5 mg of AIBN and 25.6 g of nitrobenzene were sequentially added to a 50 mL reaction flask and stirred for homogenization. Then the reaction flask was vacuumed, then filled with nitrogen. The vacuum and nitrogen filling steps were repeated for more than 3 times, then the reaction flask was placed in 75 C. constant temperature oil bath for 24 hours, after which the reaction was terminated; the solution was poured into about 300 mL of methanol for precipitation, then filtration was conducted to obtain a solid product, which was washed thoroughly with methanol, and then dried in an oven at 60 C. for 8 hours or more to obtain a powdery product, norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer, denoted as P(NA-alt-MIPOSS);
[0045] (2) 0.0257 g of the P (NA-alt-MIPOSS) and 5 mmol of 6FDA were mixed and ground in a mortar to obtain a mixed acid anhydride;
[0046] (3) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of ODA, 10 g of DMF and 6.7 g of THF were added to a 50 mL three-necked flask until the ODA was completely dissolved. Then under mechanical stirring, the mixed acid anhydride obtained in step (2) was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution;
[0047] (4) The prepared P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution was poured onto a clean glass plate, coated homogeneously by an automatic coating machine, and placed in a vacuum drying oven to remove air bubbles under vacuum for 5 hours; according to the preset program, the temperature was raised to 70 C. for 2 hours, 120 C. for 1 hour, 150 C. for 2 hours, 200 C. for 1 hour, 300 C. for 1 hour for thermal imidization. After the treatment, the film was cooled to room temperature, peeled off in water for 5 minutes by ultrasonic, and was vacuum dried in an oven at 60 C. for 12 hours to obtain a 6FDA-ODA type PI film with a low dielectric constant and high fracture toughness. The thickness of the film is 66 m, and the theoretical content of P(NA-alt-MIPOSS) is 1 wt %.
Example 4
[0048] (1) 20 mmol of norbornene dianhydride, 5 mmol of maleimido heptaisobutyl polysilsesquioxane, 65 mg of AIBN and 45.6 g of chlorobenzene were sequentially added to a 50 mL reaction flask and stirred for homogenization. Then the reaction flask was vacuumed, then filled with nitrogen. The vacuum and nitrogen filling steps were repeated for more than 3 times, then the reaction flask was placed in 75 C. constant temperature oil bath for 24 hours, after which the reaction was terminated; the solution was poured into about 300 mL of methanol for precipitation, then filtration was conducted to obtain a solid product, which was washed thoroughly with methanol, and then dried in an oven at 60 C. for 8 hours or more to obtain a powdery product, norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer, denoted as P(NA-alt-MIPOSS);
[0049] (2) 0.1542 g of the P (NA-alt-MIPOSS) and 5 mmol of PMDA were mixed and ground in a mortar to obtain a mixed acid anhydride;
[0050] (3) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of TFMB, 10 g of DMF and 6 g of THF were added to a 50 mL three-necked flask until the TFMB was completely dissolved. Then under mechanical stirring, the mixed acid anhydride obtained in step (2) was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/PMDA-TFMB type polyamic acid solution;
[0051] (4) The prepared P(NA-alt-MIPOSS)/PMDA-TFMB type polyamic acid solution was poured onto a clean glass plate, coated homogeneously by an automatic coating machine, and placed in a vacuum drying oven to remove air bubbles under vacuum for 5 hours; according to the preset program, the temperature was raised to 70 C. for 2 hours, 120 C. for 1 hour, 150 C. for 2 hours, 200 C. for 1 hour, 300 C. for 1 hour for thermal imidization. After the treatment, the film was cooled to room temperature, peeled off in water for 5 minutes by ultrasonic, and was vacuum dried in an oven at 60 C. for 12 hours to obtain a PMDA-TFMB type PI film with a low dielectric constant and high fracture toughness. The thickness of the film is 59 m, and the theoretical content of P(NA-alt-MIPOSS) is 6 wt %.
Example 5
[0052] (1) 10 mmol of norbornene dianhydride, 5 mmol of maleimido heptaisobutyl polysilsesquioxane, 0.08 g of AIBN and 25.6 g of toluene were sequentially added to a 50 mL reaction flask and stirred for homogenization. Then the reaction flask was vacuumed, then filled with nitrogen. The vacuum and nitrogen filling steps were repeated for more than 3 times, then the reaction flask was placed in 75 C. constant temperature oil bath for 24 hours, after which the reaction was terminated; the solution was poured into about 300 mL of methanol for precipitation, then filtration was conducted to obtain a solid product, which was washed thoroughly with methanol, and then dried in an oven at 60 C. for 8 hours or more to obtain a powdery product, norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer, denoted as P(NA-alt-MIPOSS);
[0053] (2) 0.1542 g of the P (NA-alt-MIPOSS) and 5 mmol of BPDA were mixed and ground in a mortar to obtain a mixed acid anhydride;
[0054] (3) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of PDA, 6 g of NMP and 3 g of THF were added to a 50 mL three-necked flask until the PDA was completely dissolved. Then under mechanical stirring, the mixed acid anhydride obtained in step (2) was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/BPDA-PDA type polyamic acid solution;
[0055] (4) The prepared P(NA-alt-MIPOSS)/BPDA-PDA type polyamic acid solution was poured onto a clean glass plate, coated homogeneously by an automatic coating machine, and placed in a vacuum drying oven to remove air bubbles under vacuum for 5 hours; according to the preset program, the temperature was raised to 70 C. for 2 hours, 120 C. for 1 hour, 150 C. for 2 hours, 200 C. for 1 hour, 300 C. for 1 hour for thermal imidization. After the treatment, the film was cooled to room temperature, peeled off in water for 5 minutes by ultrasonic, and was vacuum dried in an oven at 60 C. for 12 hours to obtain a BPDA-PDA type PI film with a low dielectric constant and high fracture toughness. The thickness of the film is 63 m, and the theoretical content of P(NA-alt-MIPOSS) is 6 wt %.
Comparative Example 1
[0056] (1) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of ODA, 10 g of DMF and 6.7 g of THF were added to a 50 mL three-necked flask until the ODA was completely dissolved. Then under mechanical stirring, 5 mmol of 6FDA was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution;
[0057] (2) A 6FDA-ODA type polyimide film was prepared by the same method as step (4) of example 1, and the thickness of the prepared film is 61 m.
Comparative Example 2
[0058] (1) 0.1542 g of MIPOSS and 5 mmol of 6FDA were mixed and ground in a mortar to obtain a mixed acid anhydride;
[0059] (2) Under nitrogen atmosphere, at 40% humidity and 0 C., 5 mmol of ODA, 10 g of DMF and 6.7 g of THF were added to a 50 mL three-necked flask until the ODA was completely dissolved. Then under mechanical stirring, the mixed acid anhydride obtained in step (1) was divided into four equal portions, and each portion was added to the above three-necked flask at an interval of 30 minutes; after the mixed acid anhydride was all added, stirring was continued for 12 hours to obtain a P(NA-alt-MIPOSS)/6FDA-ODA type polyamic acid solution;
[0060] (2) A 6FDA-ODA type polyimide film was prepared by the same method as step (4) of example 1, and the theoretical content of P(NA-alt-MIPOSS) is 6 wt %, and the thickness of the prepared film is 63 m.
[0061] Measure tensile modulus according to GB/T 1040.3-2006, measure tensile strength according to GB/T1040.3-2006, measure elongation at break according to GB/T1040.3-2006, measure fracture energy according to ASTM D882-12 and measure dielectric constant according to GB/T 1409-2006. Mechanical properties and dielectric constant of the polyimide films prepared in examples 1 to 5 and comparative Examples 1 and 2 are shown in Table 1.
[0062] As can be seen from the table, the present invention uses norbornene dianhydride-maleimido heptaisobutyl polysilsesquioxane alternating copolymer as a comonomer of an aromatic dianhydride to introduce into a polyimide. The prepared 6FDA-ODA type PI film has a dielectric constant low to 2.2, a tensile elongation at break of 30.9%, and tensile fracture energy of 26.2 MJ/m.sup.3; compared with primitive 6FDA-ODA type PI film, the dielectric constant is decreased by 29%, the elongation at break is increased by 272%, the tensile fracture energy is increased by 285%. The 6FDA-ODA type PI film prepared with the same amount of MIPOSS (comparative example 2) can only reduce the dielectric constant to 2.7 with a lower tensile elongation at break and tensile fracture energy compared to primitive 6FDA-ODA type PI film; the film of the present invention has a lower dielectric constant, higher elongation at break and higher tensile fracture energy, showing good fracture toughness and higher use value.
TABLE-US-00001 TABLE 1 performance of the PI film prepared in examples and comparative examples tensile tensile elongation fracture modulus strength at break energy dielectric (GPa) (MPa) ( % ) (MJ/m.sup.3) constant Example 1 2.7 93.6 30.9 26.2 2.2 Example 2 2.8 95.9 27.5 23.5 2.2 Example 3 3.4 118 12.7 12.0 2.7 Example 4 3.1 92.4 24.2 21.3 2.3 Example 5 3.7 96.6 23.3 21.5 2.4 Comparative 3.2 107 8.3 6.8 3.1 example 1 Comparative 3.0 85.2 3.7 2.3 2.7 example 2