HOLOGRAPHIC OBSERVATION METHOD AND DEVICE

Abstract

A holographic observation method includes: casting a light beam generated by driving a semiconductor laser light source with an electric current with an alternating-current component superimposed or a light beam having a predetermined spectral width and predetermined spectral intensity to have predetermined coherency to an observation object; forming a hologram by causing a light beam transmitted through or reflected by the observation object to interfere with a reference light beam; and obtaining information on the observation object by performing image processing on the hologram.

Claims

1-14. (canceled)

15. A holographic observation method comprising: emitting a light beam generated by driving a semiconductor laser light source with an electric current with an alternating-current component superimposed from the semiconductor laser light source and casting the light beam emitted from the semiconductor laser light source to an observation object while returning a portion of the light beam to the semiconductor laser light source; forming a hologram by causing a light beam transmitted through or reflected by the observation object to interfere with a reference light beam; and obtaining information on the observation object by performing image processing on the hologram.

16. A holographic observation method comprising: casting a light beam having a predetermined spectral width and predetermined spectral intensity to have predetermined coherency to an observation object; forming a hologram by causing a light beam transmitted through or reflected by the observation object to interfere with a reference light beam; and obtaining information on the observation object by performing image processing on the hologram.

17. A holographic observation device comprising: a) a semiconductor laser light source; b) a current source that supplies a drive current with an alternating-current component superimposed to the semiconductor laser light source; c) an exposure optical system that causes a light beam emitted from the semiconductor laser light source driven with the drive current to be transmitted through or reflected by an observation object and interfere with light transmitted through or reflected at a different spot of the observation object; d) an image sensor that acquires an interference image of the light beam transmitted through or reflected by the observation object; and e) a return light forming unit that returns a portion of the light beam emitted from the semiconductor laser light source to the semiconductor laser light source.

18. A holographic observation device comprising: a) a semiconductor laser light source; b) a current source that supplies a drive current with an alternating-current component superimposed to the semiconductor laser light source; c) an exposure optical system that splits a light beam emitted from the semiconductor laser light source driven with the drive current into two light beams, and causes one of the two light beams to be transmitted through or reflected by an observation object; and d) an image sensor that acquires an interference image of the light beam transmitted through or reflected by the observation object and a light beam that is the other of the two light beams and is neither transmitted through nor reflected by the observation object.

19. The holographic observation device according to claim 17, wherein the alternating-current component has a frequency of 50 kHz to 300 kHz.

20. The holographic observation device according to claim 19, wherein a frequency component of 100 MHz to 500 MHz is further superimposed on the alternating-current component.

21. The holographic observation device according to claim 17, wherein the return light forming unit includes a reflecting member that has a reflecting surface that reflects at least a portion of incident light and is arranged to be on an optical axis of the light beam emitted from the semiconductor laser light source and in an orientation that allows a normal line of the reflecting surface to be inconsistent with the optical axis.

22. The holographic observation device according to claim 17, wherein the alternating-current component has a frequency that is higher than a signal readout frequency of the image sensor.

23. The holographic observation device according to claim 17, wherein the alternating-current component has a frequency of 100 MHz to 500 MHz.

24. A holographic observation device comprising: a) a light source that emits a light beam having a predetermined spectral width and predetermined spectral intensity to have predetermined coherency; b) an exposure optical system that causes the light beam to be transmitted through or reflected by an observation object and interfere with light transmitted through or reflected at a different spot of the observation object; and c) an image sensor that acquires an interference image of the light beam transmitted through or reflected by the observation object.

25. A holographic observation device comprising: a) a light source that emits a light beam having a predetermined spectral width and predetermined spectral intensity to have predetermined coherency; b) an exposure optical system that splits the light beam into two light beams, and causes one of the two light beams to be transmitted through or reflected by an observation object; and c) an image sensor that acquires an interference image of the light beam transmitted through or reflected by the observation object and a light beam that is the other of the two light beams and is neither transmitted through nor reflected by the observation object.

26. A cell image observation device comprising the holographic observation device according to claim 17.

27. A light source unit comprising: a semiconductor laser light source; and a return light forming unit that returns a portion of a light beam emitted from the semiconductor laser light source to the semiconductor laser light source, wherein the return light forming unit includes a reflecting member that has a reflecting surface that reflects at least a portion of incident light and is arranged to be on an optical axis of the light beam emitted from the semiconductor laser light source and in an orientation that allows a normal line of the reflecting surface to be inconsistent with the optical axis.

28. The holographic observation device according to claim 18, wherein the alternating-current component has a frequency of 50 kHz to 300 kHz.

29. The holographic observation device according to claim 28, wherein a frequency component of 100 MHz to 500 MHz is further superimposed on the alternating-current component.

30. The holographic observation device according to claim 28, further comprising a return light forming unit that returns a portion of the light emitted from the semiconductor laser light source to the semiconductor laser light source.

31. The holographic observation device according to claim 30, wherein the return light forming unit includes a reflecting member that has a reflecting surface that reflects at least a portion of incident light and is arranged to be on an optical axis of the light beam emitted from the semiconductor laser light source and in an orientation that allows a normal line of the reflecting surface to be inconsistent with the optical axis.

32. A cell image observation device comprising the holographic observation device according to claim 18.

33. A cell image observation device comprising the holographic observation device according to claim 24.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0045] FIG. 1 is a configuration example of an off-axis holographic observation device using reflected light from an observation object.

[0046] FIG. 2 is a configuration example of an off-axis holographic observation device using transmitted light from an observation object.

[0047] FIG. 3 is a diagram illustrating a problem in a conventional holographic observation device.

[0048] FIG. 4 illustrates an emission spectrum (a) in a case where a semiconductor laser light source is driven with a direct current, an emission spectrum (b1) in a case where a high-frequency alternating-current signal is superimposed on a drive current of the semiconductor laser light source, an emission spectrum (b2) in a case where return light to the semiconductor laser light source is formed, and an emission spectrum (c) in a case where a low-frequency alternating-current signal is superimposed on the drive current of the semiconductor laser light source.

[0049] FIG. 5 is a configuration diagram of a main part of an in-line holographic observation device that is an embodiment of a holographic observation device according to the present invention.

[0050] FIG. 6 is a configuration diagram of a light source unit of the holographic observation device according to the present embodiment.

[0051] FIGS. 7(a). 7(b) and 7(c) are diagrams each illustrating a change in a coherence length of a coherent light beam in a case where an alternating-current signal is superimposed on a drive current.

[0052] FIGS. 8(a) and 8(b) are diagrams each illustrating an observation image obtained by the holographic observation device according to the present invention.

[0053] FIG. 9 is a configuration diagram of a light source unit used in a modification example of the holographic observation device according to the present invention.

[0054] FIG. 10 is a configuration diagram of a main part of an off-axis holographic observation device that is a modification example of the holographic observation device according to the present invention.

[0055] FIG. 11 is a configuration diagram of a light source unit used in another modification example of the holographic observation device according to the present invention.

DESCRIPTION OF EMBODIMENTS

[0056] An embodiment of a holographic observation method and device according to the present invention is described with reference to the drawings. The holographic observation device in the present embodiment is a so-called in-line holographic observation device (see Non Patent Literatures 1 and 2 regarding an in-line holographic observation device), and is used to acquire an observation image of cells, such as iPS cells or ES cells, cultured on a culture plate.

1. Device Configuration

[0057] FIG. 5 illustrates a configuration of a main part of the holographic observation device in the present embodiment. A holographic observation device 1 includes a light source unit 2, an image sensor 4, and a control unit 5. Cells on a culture plate 3 are exposed to a pseudo-coherent light beam with a minute spread angle (about 10 degrees) emitted from the light source unit 2. Of the pseudo-coherent light beam, a portion transmitted through the cells and the culture plate 3 reaches the image sensor 4 while interfering with a portion transmitted through a spot adjacent to the cells on the culture plate 3. Although not illustrated in FIG. 5, an appropriate exposure optical system is used to cause a spot size of a light beam emitted from the light source unit 2 to be big enough for the whole cells to be exposed to the light beam.

[0058] The control unit 5 includes a storage unit 50, and further includes, as a functional block, a light source control unit 51 and an arithmetic processing unit 52. The light source control unit 51 controls the operation of the light source unit 2. The arithmetic processing unit 52 includes an arithmetic processing unit 52 that finds phase information from hologram data (two-dimensional intensity distribution data of a pseudo-coherent light beam formed on a detection surface of the image sensor 4) acquired by the image sensor 4 by an arithmetic operation, and creates an observation image of the cells. In the storage unit 50, pseudo-coherent light beam characteristics information is stored in advance, the pseudo-coherent light beam characteristics information is information on a relationship between the magnitude of an electric current supplied to a semiconductor laser diode 24 and the intensity of a pseudo-coherent light beam and a relationship between the amplitude and frequency of an alternating-current signal and the coherence length of the pseudo-coherent light beam. The relationship between the amplitude and frequency of the alternating-current signal and the coherence length of the pseudo-coherent light beam will be described later. Furthermore, an input unit 6 and a display unit 7 are connected to the control unit 5. The observation image created by the arithmetic processing unit 52 is displayed on the display unit 7.

[0059] As illustrated in FIG. 6, the light source unit 2 includes the semiconductor laser diode 24 and a drive current supply unit 20 that supplies a drive current to the semiconductor laser diode 24. Furthermore, the drive current supply unit 20 includes a direct-current voltage generating unit 21 that generates a direct-current voltage, an alternating-current voltage generating unit 22 that generates an alternating-current voltage and superimposes the alternating-current voltage on the direct-current voltage, and a voltage/current converting unit 23. On the basis of a user's input instruction on the intensity and coherence length of a pseudo-coherent light beam and the pseudo-coherent light beam characteristics information stored in the storage unit 50, the light source control unit 51 determines the magnitude of a direct-current voltage to be generated by the direct-current voltage generating unit 21 and adjusts the intensity of a semiconductor laser beam, or determines values of the amplitude and frequency of an alternating-current voltage to be generated by the alternating-current voltage generating unit 22 and adjusts the coherence length of the semiconductor laser beam.

2. Amplitude and Frequency of Alternating-Current Signal

[0060] As described above, the holographic observation device 1 in the present embodiment observes cells on the culture plate 3. When a user inputs values of an estimated thickness (generally, about tens of micrometers to 100 m) of the cells and a thickness (generally, about 1 mm) of the culture plate 3, the light source control unit 51 determines the amplitude and frequency of an alternating-current signal so that the coherence length of a pseudo-coherent light beam generated is longer than the thickness (for example, tens of micrometers to 100 m) of an observation object (the cells) and shorter than the thickness (for example, about 1 mm) of a non-observation object (the culture plate 3) present on a light path on the basis of the pseudo-coherent light beam characteristics information. However, this frequency is set to be a frequency sufficiently higher than a signal readout period of the image sensor 4 (for example, a frequency that is 1000 times higher than a signal readout frequency of the image sensor 4). In the present embodiment, a non-observation object present on the light path is only the culture plate 3, thus the thickness of the culture plate 3 is input; however, in a case where a container in which a sample is contained, a glass plate, etc. are present on the light path, the user inputs the thicknesses of these as well. Alternatively, the user inputs the thickness of the thinnest one of non-observation objects. Here, it is configured to input only the thicknesses of the cells and the culture plate 3; however, in a case where an observation object, etc. are thick, the optical path length varies greatly depending on the refractive index, and therefore, it is preferable to input a refractive index as well as a thickness and configure the coherence length of a pseudo-coherent light beam to be longer than an optical thickness (the product of a physical thickness and a refractive index) of the observation object and shorter than an optical thickness of a non-observation object.

[0061] Here, a relationship between the amplitude of an alternating-current signal and the coherence length of a pseudo-coherent light beam is described. As a semiconductor laser diode, a single-mode laser (LP642-SF20) available from THORLABS, Inc. was used. FIG. 7(a) is a measurement result illustrating the coherence length when the semiconductor laser diode was driven with a direct current only. The horizontal axis of a graph indicates a distance from an output end of semiconductor laser light that increases toward the left side, and the vertical axis indicates an amplitude (interference intensity) at the distance. In this measurement, the amplitude was measured only up to a distance of about 8 cm from the output end of semiconductor laser light; however, sufficiently large interference peaks can be seen at up to this distance, and therefore, the coherence length is considered to be about a few meters.

[0062] FIG. 7(b) is a graph illustrating the coherence length when an alternating-current signal (a frequency of 100 kHz, an amplitude of 30% with respect to a direct current) was superimposed on a drive current of the semiconductor laser diode; FIG. 7(c) is an enlarged graph at near the output end of semiconductor laser light. In FIG. 7(b), the coherence length was reduced to about 4 mm from the output end of semiconductor laser light, and the interference intensity was significantly decreased, and most of peaks associated with interference vanished. Furthermore, as a result of the inventors' measurement of the coherence length while changing the amplitude of an alternating-current signal, it was confirmed that the larger the amplitude of an alternating-current signal superimposed on a drive current of the semiconductor laser diode, the shorter the coherence length of a semiconductor laser beam. This is thought to be because the larger the amplitude of an alternating-current signal superimposed, the wider the spectral width of a light beam, and as a result, the coherency is reduced, and the coherence length is shortened.

[0063] Further, a relationship between the frequency of an alternating-current signal and the coherence length of a pseudo-coherent light beam is described. Also, here, a single-mode laser (LP642-SF20) available from THORLABS, Inc. was used as a semiconductor laser diode. Because of the specific characteristics of the semiconductor laser diode, this semiconductor laser diode produced a discretely spread spectral distribution as an emission spectrum (b1) illustrated in FIG. 4 even when driven with a direct current only, and an emission spectrum (c) illustrated in FIG. 4 was obtained by superimposing an alternating-current signal with a frequency of 100 kHz on a drive current of this semiconductor laser diode. As described above, it is considered that by superimposing an alternating-current signal of a low frequency of about 50 kHz to 300 kHz, an oscillation spectrum is broadened, and the spectral width is increased. The increase in the spectral width reduces the coherency, and the coherence length is shortened.

[0064] However, as described above, the frequency of an alternating-current signal superimposed on the drive current is preferably a frequency that can modulate semiconductor laser light with a period sufficiently shorter than a signal readout period of the image sensor 4 (i.e., a frequency sufficiently higher than a signal readout frequency of the image sensor 4), and is particularly preferably about 1000 times higher than the signal readout frequency of the image sensor 4. For example, in a case of the above-described general image sensor, a signal readout period is 33 ms (a signal readout frequency is 30 Hz); therefore, the above-described alternating-current signal of a low frequency of 50 kHz to 300 kHz can be used sufficiently suitably.

[0065] A laser beam (a pseudo-coherent light beam) with an intended coherence length can be obtained by generating an alternating-current voltage with the appropriate amplitude and frequency by taking the thickness (and the refractive index) of an observation object and a non-observation object located on a light path into consideration and driving the semiconductor laser diode 24 with the alternating-current voltage superimposed on a direct-current voltage.

3. Comparison of Observation Images

[0066] As a conventional holographic observation device uses a coherent light beam with a coherence length of a few meters or more, interference fringes caused by a phase shift due to the culture plate 3 are superimposed on an observation image of cells, and this deteriorates the image quality. FIG. 8(a) is an observation image of only the culture plate 3 (no culture medium nor cells) that was acquired by exposing the culture plate 3 to a coherent light beam of 642 nm by a conventional holographic observation method (device). This observation image illustrates that unwanted interference fringes caused by a phase shift of the culture plate 3 are superimposed on over the entire image.

[0067] FIG. 8(b) is an observation image of only the culture plate 3 (no culture medium nor cells) that was acquired by driving the above-described semiconductor laser diode with an alternating-current voltage of a frequency of 100 kHz and an amplitude (an amplitude with respect to a drive direct current) of 24% superimposed on a direct-current voltage and exposing the culture plate 3 to a pseudo-coherent light beam with a spectrum center of 642 nm in the holographic observation method (device) in the present embodiment. In both FIGS. 8(a) and 8(b), an image sensor with a readout period of 33 ms (a readout frequency of 30 Hz) was used. It can be seen that in the observation image of FIG. 8(b), unwanted interference fringes caused by the culture plate 3 are significantly reduced.

4. Modification Examples

[0068] The above-described embodiment is merely an example, and can be appropriately modified in accordance with the gist of the present invention.

<4-1. Modification Example of Frequency of Alternating-Current Component>

[0069] In the above-described embodiment, a frequency of an alternating-current component superimposed on a drive current (specifically, a frequency of an alternating-current voltage superimposed on a direct-current voltage) is not limited to a low frequency of 50 kHz to 300 kHz. For example, an alternating-current component of a high frequency of 1 MHz to hundreds of megahertz (preferably, 100 MHz to 500 MHz) may be superimposed, or both of these low- and high-frequency components may be superimposed.

[0070] A general semiconductor laser diode that oscillates in single mode typically produces a type of an emission spectrum (a) illustrated in FIG. 4 when driven with a drive current. When such a semiconductor laser diode is driven with an electric current on which an alternating-current component of a high frequency of 100 MHz to 500 MHz is superimposed, the emission spectrum of the semiconductor laser diode is as the emission spectrum (b1) illustrated in FIG. 4. That is, by superimposing an alternating-current component of a high frequency of 100 MHz to 500 MHz, the emission spectrum becomes discretely spread.

[0071] In the semiconductor laser diode that forms emission of such a discretely spread spectral distribution, when an alternating-current component of a low frequency of about 50 kHz to 300 kHz is further superimposed (i.e., an alternating-current component that a high-frequency component of 100 MHz to 500 MHz and a low-frequency component of 50 kHz to 300 kHz are superimposed on each other is superimposed) on the drive current, respective peak widths of discretely existing peaks are increased, and the emission spectrum becomes continuously spread as the emission spectrum (c) illustrated in FIG. 4. By superimposing an alternating-current component that a high-frequency component and a low-frequency component are superimposed on each other is superimposed on a drive current in this way, the spectral width can be increased sufficiently.

[0072] In this way, the spectral width can be increased by superimposing either one (or both) of a high-frequency alternating-current component and a low-frequency alternating-current component, and an intended coherence length can be obtained by selecting the frequency appropriately. Accordingly, an observation image in which superimposition of unwanted interference fringes is reduced can be obtained.

<4-2. Alternative Method of Superimposition of High-Frequency Component>

[0073] One of methods to obtain a discretely spread spectrum of light beam from the semiconductor laser diode that produces the type of the emission spectrum (a) illustrated in FIG. 4 is, as described above, superimposing a high-frequency alternating-current component on a drive current; however, there is another method. FIG. 9 illustrates a configuration example of a light source unit 2a according to another method. In this light source unit 2a, light emitted from the semiconductor laser diode 24 is collimated to parallel light by a collimating lens 81, and is concentrated to a ferrule 83 by a focusing lens 82, and is led by an optical fiber 84, and then is emitted to cells on the culture plate 3 (see FIG. 5). The ferrule 83 here has a distal end which is formed of a reflecting surface 830 that reflects a portion of incident light, and the reflecting surface 830 is arranged on an optical axis of the light beam emitted from the semiconductor laser diode 24. Furthermore, the reflecting surface 830 is arranged in an orientation that allows the normal line of the reflecting surface 830 and the optical axis to make a predetermined angle that is not 0. That is, the reflecting surface 830 is arranged in an orientation that allows the normal line of the reflecting surface 830 to be inconsistent with the optical axis.

[0074] The predetermined angle here is an angle that allows a portion of a light beam reflected by the reflecting surface 830 to return to the semiconductor laser diode 24 (i.e., allows return light to be formed). The smaller the angle , the more the light returns to the semiconductor laser diode 24; however, if too much light returns to the semiconductor laser diode 24, the semiconductor laser diode 24 may be damaged by the return light. On the other hand, the larger the angle , the less the light returns to the semiconductor laser diode 24; if the angle exceeds a certain angle, no light returns to the semiconductor laser diode 24. As an example, by limiting the angle to be in a range of more than 0 but not exceeding 7, 10% to 90% of the light emitted from the semiconductor laser diode 24 is allowed to return to the semiconductor laser diode 24.

[0075] However, depending on the amount of light returning to the semiconductor laser diode 24, there is a possibility of affecting parameters of the laser resonator gain, loss, current operating point of the semiconductor laser diode 24, the Fresnel reflectance of respective end surfaces of the semiconductor laser diode 24 and the optical fiber 84, matching to a laser resonator formed of return light, etc.; therefore, the optimal value of return light is preferably determined by adjustment made by a combination of the above-described angle and the affected parameters described above.

[0076] Specifically, for example, it is preferable that first, rough adjustments of the laser resonator gain and matching impedance of the semiconductor laser diode 24, the amount of drive current, the Fresnel reflectance of respective end surfaces of the semiconductor laser diode 24 and the optical fiber 84, etc. be made in advance so that the operating point of the semiconductor laser diode 24 is optimized, and then fine adjustments of the angle , etc. be made so that the optimal (or acceptable) amount of return light is formed and the above-described parameters have an optimal (or acceptable) value.

[0077] The reflecting surface 830 for forming return light does not necessarily have to be configured at the distal end of the ferrule 83; alternatively, apart from the ferrule 83, an optical component such as a mirror may be provided so that return light is formed by the mirror.

[0078] If the general semiconductor laser diode 24 that oscillates in single mode is configured to form return light by the above-described configuration, the emission spectrum of the semiconductor laser diode 24 is as an emission spectrum (b2) illustrated in FIG. 4. That is, by forming return light, the spectrum becomes discretely spread. The spectral width at the time varies depending on the above-described angle . That is, by adjusting the angle , an arbitrary spectral width can be formed.

[0079] Furthermore, as described above, in the semiconductor laser diode that forms emission of such a discretely spread spectral distribution, when an alternating-current component of a low frequency of about 50 kHz to 300 kHz is further superimposed on the drive current, respective peak widths of discretely existing peaks are increased, and the emission spectrum becomes continuously spread as the emission spectrum (c) illustrated in FIG. 4.

[0080] According to this modification example, neither a complex circuit configuration nor an expensive component for obtaining a high-frequency alternating-current signal is required; therefore, it is possible to adopt a simpler circuit configuration and inexpensively configure a device.

4-3. Modification Example of Configuration of Holographic Observation Device>

[0081] The holographic observation device in the above-described embodiment is an in-line holographic observation device; however, an off-line holographic observation device can also obtain an observation image with the influence of object(s) other than an observation object reduced by using a pseudo-coherent light beam with a coherence length depending on the size of the observation object, etc., as in the above-described embodiment.

[0082] FIG. 10 illustrates a configuration of a main part of an off-axis holographic observation device 1a that is a modification example. The light source unit 2, the culture plate 3, the image sensor 4, the control unit 5, the input unit 6, and the display unit 7 are assigned the same reference numeral because they are the same as those in the above-described embodiment, and description thereof is omitted. In this holographic observation device 1a, a pseudo-coherent light beam with a predetermined spectral width and predetermined spectral intensity to have a predetermined coherence length emitted from the light source unit 2 is split into a measurement light beam to be cast on cells by a first half mirror 41 and a reference light beam that is not cast on the cells. The measurement light beam reflected by the first half mirror 41 is reflected by a first mirror 42, and then is cast on the cells on the culture plate 3. The reference light beam transmitted through the first half mirror 41 is reflected by a second mirror 45. The measurement light beam transmitted through the cells and the reference light beam reflected by the second mirror 45 are synthesized by a second half mirror 44 and interfere with each other, and are measured by the image sensor 4. The off-axis holographic observation device 1a in FIG. 10 uses transmitted light; however, the present invention can also be applied to those using reflected light.

<4-4. Modification Example of Light Source Unit 2>

[0083] Furthermore, in the above-described embodiment, a pseudo-coherent light beam is obtained by superimposing an alternating-current signal on a drive current of the semiconductor laser diode 24, thereby shortening the coherence length of the laser beam; instead of this, a superluminescent diode (SLD) and a light-emitting diode (LED) that generate light with a predetermined spectral width and a shorter coherence length than a semiconductor laser diode can be used. In this case, effects similar to the above-described embodiment can be obtained by using an SLD or an LED that has an appropriate coherence length depending on respective sizes and optical characteristics of an observation object and a non-observation object located on a light path.

[0084] Moreover, in the above-described embodiment, the light source unit 2 including only one semiconductor laser diode 24 and the corresponding drive current supply unit 20 is used; however, a light source including a plurality of semiconductor laser diodes that differ in the oscillation wavelength and respective drive units that drive the semiconductor laser diodes or a plurality of SLDs and/or LEDs that differ in the oscillation wavelength can also be used.

[0085] FIG. 11 illustrates a configuration of a light source unit 2b in a case of using a plurality of semiconductor laser diodes that differ in the oscillation wavelength. This light source unit 2b includes four types of semiconductor laser diodes 241 to 244 that emit light of a different wavelength from one another and drive current supply units 201 to 204 that supply a drive current to the semiconductor laser diodes 241 to 244, respectively. Furthermore, the drive current supply units 201 to 204 include direct-current voltage generating units 211 to 214 that generate a direct-current voltage, alternating-current voltage generating units 221 to 224 that generate an alternating-current voltage and superimpose the alternating-current voltage on the direct-current voltage, and voltage/current converting units 231 to 234, respectively. The light source unit 2b further includes a direct-current signal generating unit 25 that generates respective direct-current signals to be transmitted to the direct-current voltage generating units 211 to 214, an alternating-current signal generating unit 26 that generates respective alternating-current signals to be supplied to the alternating-current voltage generating units 221 to 224, and an illumination timing signal generating unit 27 that generates respective timing signals to be supplied to the direct-current voltage generating units 211 to 214.

[0086] In this light source unit 2b, the (average) intensity of respective pseudo-coherent light beams emitted from the semiconductor laser diodes 241 to 244 is controlled depending on the magnitude of respective direct-current signals to be transmitted to the direct-current voltage generating units 211 to 214 from the direct-current signal generating unit 25. Furthermore, respective coherence lengths of the pseudo-coherent light beams emitted from the semiconductor laser diodes 241 to 244 are controlled according to the frequency and amplitude of respective alternating-current signals to be transmitted to the alternating-current voltage generating units 212 to 224 from the alternating-current signal generating unit 26. As described above, the frequency of an alternating-current signal is set to be a frequency sufficiently higher (for example, a frequency that is about 1000 times higher) than a readout frequency of the image sensor, and the coherence length is set to be an appropriate length (for example, hundreds of micrometers) depending on the size and optical characteristics of an observation object.

[0087] The illumination timing signal generating unit 27 transmits respective timing signals to the semiconductor laser diodes 241 to 244 in sequence. When the timing signals are transmitted to the direct-current voltage generating units 211 to 214, the drive current supply units 201 to 204 superimpose alternating-current signals generated by the alternating-current voltage generating units 221 to 224 on direct-current signals generated by the direct-current voltage generating units 211 to 214 and transmit the superimposed signals to the voltage/current converting units 231 to 234, and drive currents are supplied to the semiconductor laser diodes 241 to 244. Accordingly, pseudo-coherent light beams of different wavelengths are sequentially cast on an observation object, and respective holographic images of the observation object formed of the pseudo-coherent light beams of the different wavelengths are obtained.

[0088] An aspect of interference of a pseudo-coherent light beam cast on an observation object differs depending on the wavelength of the light beam. Therefore, in a case where four types of pseudo-coherent light beams of different wavelengths are cast on an observation object as described above, four types of holographic images that are different depending on the wavelength are obtained. An image of the observation object is reconstructed by using the four types of holographic images obtained in this way, thereby the image of the observation object can be obtained with higher resolution as compared with the case of using only one type of light beam of a wavelength.

REFERENCE SIGNS LIST

[0089] 1, 1a . . . Holographic Observation Device [0090] 2, 2a, 2b . . . Light Source Unit [0091] 20, 201 to 204 . . . Drive Current Supply Unit [0092] 21, 211 to 214 . . . Direct-Current Voltage Generating Unit [0093] 22, 221 to 224 . . . Alternating-Current Voltage Generating Unit [0094] 23, 231 to 234 . . . Voltage/Current Converting Unit [0095] 24, 241 to 244 . . . Semiconductor Laser Diode [0096] 25 . . . Direct-Current Signal Generating Unit [0097] 26 . . . Alternating-Current Signal Generating Unit [0098] 27 . . . Illumination Timing Signal Generating Unit [0099] 3 . . . Culture Plate [0100] 4 . . . Image Sensor [0101] 5 . . . Control Unit [0102] 50 . . . Storage Unit [0103] 51 . . . Light Source Control Unit [0104] 52 . . . Arithmetic Processing Unit [0105] 6 . . . Input Unit [0106] 7 . . . Display Unit [0107] 41 . . . First Half Mirror [0108] 42 . . . First Mirror [0109] 44 . . . Second Half Mirror [0110] 45 . . . Second Mirror [0111] 81 . . . Collimating Lens [0112] 82 . . . Focusing Lens [0113] 83 . . . Ferrule [0114] 830 . . . Reflecting Surface [0115] 84 . . . Optical Fiber