Method of capturing sintered product after sintering waste gas in semiconductor manufacturing process

Abstract

The invention relates to a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process and its capturing device. The method comprises providing aerosolized water molecules to be entered into a reaction chamber of a waste gas treatment tank; and capturing a product generated after a sintering reaction of the waste gas by diffusion distributing of the aerosolized water molecules, wherein, the aerosolized water molecules are diffusion distributed between a bottom edge of a waste gas reaction end in the reaction chamber and a tank wall surrounding the reaction chamber. The present invention further provides a device for capturing a sintered product for implementing the method. The object of the present invention is to solve problems saying that a semiconductor exhaust gas is processed by a high temperature sintering treatment, the generated SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders are extremely fine, the F.sub.2 gas is small molecules, and it is not easy to capture them during a rear stage water washing program.

Claims

1. A method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process, comprising the steps of: mixing water with air at room temperature to form a gaseous aerosolized water; introducing the gaseous aerosolised water into a reaction chamber of a waste gas treatment tank from a plurality of water columns, wherein the plurality of water columns are disposed inside the reaction chamber, and nozzles of the plurality of the water columns are positioned between a waste gas reaction end and a bottom end of the reaction chamber; and capturing the sintered product generated after a sintering reaction of the waste gas by the gaseous aerosolised water, wherein, the gaseous aerosolised water are diffusely distributed in an area defined by the nozzles of the plurality of water columns, the bottom end of the reaction chamber, and a tank wall surrounding the reaction chamber; wherein granularities of molecules of the gaseous aerosolised water are less than the granularity of the sintered product; and wherein the sintered product collides with the molecules of the aerosolised water for heat exchange, so as to accelerate dissolution rate of the sintered product in water, as well as enlarging the granularity of the sintered product.

2. The method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process as claimed in claim 1, wherein the plurality of water columns are spaced apart at equal circumferential distance.

3. The method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process as claimed in claim 2, wherein the product comprises a SiO.sub.2 powder, a WO.sub.2 powder, a BO.sub.2 powder and a F.sub.2 gas.

Description

BRIEF DESCRIPTION

(1) FIG. 1 is a schematic diagram illustrating the method of the present invention to capture;

(2) FIG. 2 is a structural diagram of the capturing device of the present invention;

(3) FIG. 3 is a cross-sectional view of a water disk of the capturing device of the present invention;

(4) FIG. 4 is a cross-sectional view along a line A-A of the FIG. 3 of the present invention;

(5) FIG. 5 is a schematic diagram of the operation of the capturing device of the FIG. 2;

(6) FIG. 6 is a cross-sectional diagram showing a configuration of the capturing device mounted on the semiconductor exhaust gas treatment tank.

DETAILED DESCRIPTION OF THE INVENTION

(7) Please refer to FIG. 1 which discloses a schematic diagram of a method of capturing a sintered product after sintering a waste gas in a semiconductor manufacturing process provided in the first embodiment of the present invention described in a semiconductor process apparatus having a waste gas treatment tank 20. A reaction chamber 21 at a front side is formed in the waste gas treatment tank 20. The waste gas 11 generated from a semiconductor manufacturing process is guided to move into the reaction chamber 21 at a front side. The waste gas 11 is processed by sintering using a high temperature 12 from a flame or a hot rod at a waste gas reaction end of the reaction chamber 21. After the waste gas 11 is processed by sintering using the high temperature 12, the reaction products, such as, the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders or the F.sub.2 gas, are generated in the reaction chamber 21. When the waste gas 11 contacts with the flame to be processed by sintering reaction, the waste gas reaction end 26 means flame vents. When the waste gas is in contact with the hot rod to carry out the sintering reaction, the waste gas reaction end 26 means space around the hot rod.

(8) In the present invention, the aerosolised water molecules 13 enter into the reaction chamber 21 of the waste gas treatment tank 20 so that the aerosolised water molecules 13 are diffusion distributed between the bottom edge of the waste gas reaction end in the reaction chamber 21 and the tank wall surrounding the reaction chamber 21 so as to capture the sintered products after the sintering reaction of the waste gas 11. Furthermore, a gap between the waste gas reaction end and its bottom edge should be maintained so that the aerosolised water molecules 13 run away from the waste gas reaction end in order to avoid the aerosolised water molecules to reduce the temperature of the waste gas reaction end, thereby affecting the sintering effect of the waste gas 11.

(9) From the foregoing, the products containing the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders and the F.sub.2 gas are generated in the high temperature sintering process. The following chemical equations (1) to (4) are respectively disclosed to be the ones when the products which are the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders and the F.sub.2 gas react with the aerosolised water molecules 13.

(10) The following chemical equation (1) is disclosed to be one when the reaction product is SiO.sub.2:
SiO.sub.2+H.sub.2O - - - .fwdarw.H.sub.2SiO.sub.3chemical equation (1)

(11) The following chemical equation (2) is disclosed to be one when the reaction product is WO.sub.3:
WO.sub.3+H.sub.2O - - - .fwdarw.H.sub.2WO.sub.4chemical equation (2)

(12) The following chemical equation (3) is disclosed to be one when the reaction product of B.sub.2O.sub.3:
B.sub.2O.sub.3+3H.sub.2O - - - .fwdarw.2H.sub.3BO.sub.3chemical equation (3)

(13) The following chemical equation (4) is disclosed to be one when the reaction product of F.sub.2:
2F.sub.2+2H.sub.2O - - - .fwdarw.4HF+O.sub.2chemical equation (4)

(14) In the preferred embodiment, because the aerosolised water molecules 13 are tiny and are distributed in the form of diffusion in the reaction chamber 21 so as to effectively capture the products, such as, the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders and the F.sub.2 gas. In addition to the use of aerosolized water molecules 13 to collide with the SiO.sub.2 powders, the WO.sub.2 powders or the BO.sub.2 powders and to become larger to make them subtle, the use of aerosolised water molecules 13 can accelerate the dissolution rate of the F.sub.2 gas to be dissolved in water in order to facilitate the rear stage washing and scrubbing of the capturing program. Thus the generated non-toxic gases are discharged to the outside (the waste gas treatment tank of the rear stage washing process, it is not a non-appeal or improvement issue of the present invention, and it will not recited repeatedly herewith).

(15) In order to implement the method, please refer to the FIGS. 2 to 4 which disclose a second preferable embodiment of the present invention providing the implementation details of a device for capturing a sintered product. FIG. 2 discloses a configuration diagram of the capturing device of the present invention. FIG. 3 discloses a cross-sectional diagram of the water disk 30. FIG. 4 discloses another cross-sectional view of the water disk 30.

(16) In the implementation of the embodiment, an introducing pipe 23 of the semiconductor manufacturing process waste gas 11 is disposed. An outlet 231 is formed at the introducing pipe 23 of the reaction chamber 21. The introducing pipe 23 is fluidly connected to the reaction chamber 21 of the front stage processing via the outlet 231. The semiconductor manufacturing process waste gas 11 is guided and moved into the reaction chamber 21 by the introducing pipe 23. In more details, a cover 24 is disposed at a top of the waste gas treatment tank 20. The introducing pipe 23 is mounted on the cover 24. The waste gas 11 is guided and moved into the reaction chamber 21 from the top of the waste gas treatment tank 20 by the introducing pipe 23.

(17) A heater 25 implanted in the reaction chamber 21 is disposed in the waste gas treatment tank 20. In implementation, the heater 25 spaced from and in association with the introducing pipe 23 of the semiconductor manufacturing process waste gas 11 is mounted on the cover 24. Moreover, the outlet 231 of the introduction pipe 23 is directed toward the position of the heater 25. The area where the waste gas 11 injected from the introducing pipe 23 contacts with the heater 25 is defined as a waste gas reaction end 26. The waste gas 11 is sintered by using a high temperature provided by the heater 25 at the waste gas reaction end 26 so as to produce the products, such as, the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders and the F.sub.2 gas. In real implementation, the heater 25 may be a flame heater. A flame vent of the flame heater is the so-called waste gas reaction end 26. Alternatively the heater 25 may be a hot rod. The thing surrounding the hot rod is the waste gas reaction end 26.

(18) An annular water disk 30 is disposed between the cover 24 and the waste gas treatment tank 20. An inlet pipe 31 located outside of the reaction chamber 21 is formed at the annular water disk 30. A plurality of nozzles 32 surrounding and annularly spaced apart in the reaction chamber 21 are formed. A plurality of water passages 33 located in the annular water disk 30 are formed for fluidly connecting between the inlet pipe 31 and the nozzles 32 so that the aerosolised water molecules 13 can move from the inlet pipe 31 to the water passages 33 and can be sprayed in the reaction chamber 21.

(19) In specific embodiments, a plurality of water columns 34 protruding from ring-shaped water disk 30 and spaced apart at a circumferential distance, the plurality of nozzles 32 are formed at bottom of the water columns. The water passage 33 is fluidly connected to the inlet pipe 31 and the nozzles 32 via the water columns 34. By means of the water columns 34, the nozzles 32 are located at a bottom edge 261 of the waste gas reaction end 26 so that the aerosolised water molecules 13 are diffusion distributed between the bottom edge 261 of the waste gas reaction end 26 and the tank wall 22 around the reaction chamber 21. Regarding the bottom edge 261 of the waste gas reaction end 26 it is a gap H formed between the nozzle 32 and the waste gas reaction end 26. The gap H is used for moving the aerosolised water molecules 13 away from the waste gas reaction end 26 so that the aerosolised water molecules 13 sprayed from the nozzle 32 can avoid to reduce the temperature of the waste gas reaction end 26, thereby affecting the effect of sintering the waste gas 11.

(20) Please refer to FIG. 2 illustrating a water wall 27 is formed around the tank wall 22 of the reaction chamber 21. The barrier of the water wall 27 can preventing the products, such as, the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders and the F.sub.2 gas, generated after the high temperature sintering process in the reaction chamber 21 from adherence to the tank wall 22 around the reaction chamber 21. The aerosolised water molecules 13 are diffusion distributed between the bottom edge 261 of the waste gas reaction end 26 and the water wall 27.

(21) Please refer to FIG. 2 illustrating at the annular water disc 30 of the inlet pipe 31 a water driver 40 is externally connected. The water driver 40 comprises an aerosol generator 41 which can mix the water from the water driver 40 with the air to form the aerosolised water molecules 13. Then, the aerosolised water molecules 13 are injected into the reaction chamber 21 via the inlet pipe 31.

(22) Please refer to FIGS. 5 and 6 illustrating that the waste gas 11 moves into the reaction chamber 21 at the front stage of waste gas treatment tank 20. By using the high temperature provided by the heater 25, the waste gas 11 is sintered to react at the waste gas reaction end 26 of the heater 25 so that the products, such as, the SiO.sub.2 powders, the WO.sub.2 powders, the BO.sub.2 powders and the F.sub.2 gas, are generated after the high temperature sintering process in the reaction chamber 21. When an air flow in the reaction chamber 21 pushes the products to move to the bottom edge 261 of the waste gas reaction end 26, the products collide with the aerosolised water molecules 13 sprayed from the nozzle 32. Thus, the SiO.sub.2 powders, the WO.sub.2 powders and the BO.sub.2 powders combined with the aerosolised water molecules 13 to make their tiny particle become smaller and to accelerate the dissolution rate of F.sub.2 gas dissolved in water by using the aerosolised water molecules 13 for facilitating the rear stage washing program to capture and scrub. The component 28 is a washing tower and the component 29 is an exhaust orifice.

(23) Although the present invention has been explained in relation to its preferred embodiment, it is to be understood that any other possible modifications and variations can be made without departing from the scope of the invention as hereinafter claimed.