Scan chain for memory with reduced power consumption
11693056 · 2023-07-04
Assignee
Inventors
- Robert F. Wiser (Santa Cruz, CA, US)
- Shakti Singh (Bijnor Uttar Pradesh, IN)
- Neelam Surana (Palaj, IN)
Cpc classification
G01R31/31723
PHYSICS
International classification
Abstract
A scan chain architecture with lowered power consumption comprises a multiplexer selecting between a functional input and a test input. The output of the multiplexer is coupled to a low threshold voltage latch and, in test mode, to a standard threshold voltage latch. The low threshold voltage latch and standard threshold voltage latch are configured to store data when a clock input falls, using a master latch functional clock M_F_CLK, master latch test clock M_T_CLK, slave latch functional clock S_F_CLK, and slave latch test clock S_T_CLK. The slave latch has lower power consumption than the master latch.
Claims
1. A scan chain element comprising: a functional logic input and a functional logic output; a multiplexer selecting between the functional logic output and a test input according to a Scan_test_Mode input, the multiplexer coupling a selection to a mux output; a low threshold voltage master latch (LTVML) having an input coupled to the mux output, the LTVML generating an output coupled to the functional logic input; a standard threshold voltage slave latch (STVSL) having an input coupled to the LTVML output and configured to provide a test output for a subsequent scan chain element; a master functional clock (M_F_CLK) input and master test clock (M_T_CLK) input coupled to the LTVML, the LTVML latching the mux output when the M_T_CLK is 1 and the M_F_CLK is 0; a slave functional clock (S_F_CLK) input and a slave test clock (S_T_CLK) input coupled to the STVSL, the STVSL latching the LTVML output when the S_T_CLK is 1 and the S_F_CLK is 0; where the S_T_CLK and S_F_CLK are not active when the multiplexer selects the functional logic output, and the S_T_CLK is 180 degrees out of phase from the S_F_CLK when the Scan_test_Mode input asserts a test mode.
2. The scan chain element of claim where the multiplexer selects the functional logic output or the test input according to the Scan_test_Mode input to the multiplexer.
3. The scan chain element of claim 1 where the LTVML generates an output substantially equal to the input when the M_F_CLK is asserted and the STVSL generates an output substantially equal to the input when the S_T_CLK is asserted.
4. The scan chain element of claim 1 where the S_T_CLK and the S_F_CLK are not active in the functional mode.
5. The scan chain element of claim 1 where the M_T_CLK, the M_F_CLK, the S_T_CLK, and the S_F_CLK are all active during the test mode.
6. The scan chain element of claim 1 where the STVSL has an input switching threshold voltage which is greater than an input switching threshold voltage for the LTVML.
7. The scan chain element of claim 1 where the STVSL latch has an input switching threshold which is greater than an input switching threshold for the LTVML.
8. A scan chain element comprising: a mode selection input Scan_test_mode selecting a functional mode or a test mode; a multiplexer selecting between a functional logic input when in the functional mode and a test input when in the test mode according to the Scan_test_Mode input; a master latch comprising low Threshold Voltage transistors (LTVT) forming a low threshold voltage master latch (LTVML) having an input coupled to an output of the multiplexer, the LTVML generating an output coupled to a functional logic output, the master latch clocked by a master functional clock (M_F_CLK) and a master latch test clock (M_T_CLK) which is inverted from the M_F_CLK, both the M_F_CLK and M_T_CLK running continuously in a functional mode and in a test mode; a slave latch comprising standard Threshold Voltage transistors (STVT) forming a standard threshold voltage slave latch (STVSL) having an input coupled to the output of the LTVML and configured to provide a test output for a subsequent scan chain element, the slave latch clocked by a slave latch functional clock (S_F_CLK) and a slave test clock (S_T_CLK) which is inverted from the S_F_CLK, both the S_F_CLK and S_T_CLK enabled only when in test mode; where the LTVT transistors have a lower switching threshold voltage than the STVT transistors.
9. The scan chain element of claim where the M_F_CLK is inverted compared to S_F_CLK when the Scan_test_mode input selects a test mode.
10. The scan chain element of claim where the master latch and the slave latch generate an output that follows an input until an associated master latch clock or slave latch clock is not asserted.
11. A scan chain element comprising: a mode selection input Scan_test_mode selecting a functional mode or a test mode; a multiplexer selecting between a functional logic input when in the functional mode and a test input when in the test mode according to the Scan_test_Mode input; a master latch comprising low Threshold Voltage (LTVT) transistors (LTVT) forming a low threshold voltage master latch (LTVML) having an input coupled to an output of the multiplexer, the LTVML generating an output coupled to a functional logic output, the master latch clocked by a master functional clock (M_F_CLK) and a master test clock (M_T_CLK) which is inverted from the M_F_CLK, both the M_F_CLK and M_T_CLK running continuously in a functional mode and in a test mode; a slave latch comprising standard Threshold Voltage transistors (STVT) forming a standard threshold voltage slave latch (STVSL) having an input coupled to the LTVML output and configured to provide a test output for a subsequent scan chain element, the slave latch clocked by a slave functional clock (S_F_CLK) and a slave test clock (S_T_CLK) which is inverted from the S_F_CLK, both the S_F_CLK and S_T_CLK enabled only when in test mode; the slave latch and master latch each having an input, a S_T_CLK input, an S_F_CLK input, and an output, each latch comprising: VDD power input and a ground reference; an input transistor series comprising, in sequence: a first P channel transistor (PCT), a second PCT, a first N channel transistor (NCT), and a second NCT; an inverter transistor series comprising, in sequence: a third PCT and a third NCT; an output transistor series comprising, in sequence: a fourth PCT, a fifth PCT, a fourth NCT, and a fifth NCT; a junction of the second PCT and first NCT coupled to gate inputs of the third PCT and third NCT; a junction of the third PCT and third NCT coupled to gate inputs of the fourth PCT and fifth NCT; a latch output coupled to a junction of the fifth PCT and fourth NCT; a gate input of the second PCT coupled to the T_CLK; a gate input of the first NCT coupled to the F_CLK; each of the input transistor series, inverter transistor series, and output transistor series coupled between the VDD and the ground reference.
12. The scan chain element of claim 11 where the slave latch consumes less current than the master latch.
13. The scan chain element of claim 11 where the VDD is approximately 0.75V.
14. A latch having an input, a test clock (T_CLK) input, a functional clock (F_CLK) input, and an output, the latch comprising: a VDD power input and a ground reference; an input transistor series comprising, in sequence: a first P channel transistor (PCT), a second PCT, a first N channel transistor (NCT), and a second NCT; an inverter transistor series comprising, in sequence: a third PCT and a third NCT; an output transistor series comprising, in sequence: a fourth PCT, a fifth PCT, a fourth NCT, and a fifth NCT; a junction of the second PCT and first NCT coupled to gate inputs of the third PCT and third NCT; a junction of the third PCT and third NCT coupled to gate inputs of the fourth PCT and fifth NCT; the latch output coupled to a junction of the fifth PCT and fourth NCT; a gate input of the second PCT coupled to the T_CLK; a gate input of the first NCT coupled to the F_CLK; each of the input transistor series, inverter transistor series, and output transistor series coupled between the VDD and the ground reference.
15. The latch of claim 14 where the VDD is approximately 0.75V.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE INVENTION
(6) In the present description and figures, like reference numbers refer to the same structures or signals in different views. A value which is “approximately” a nominal value is understood to be in the range of 25% of the nominal value to 150% of the nominal value, and where a constraint such as “low threshold voltage” and “standard threshold voltage” are used in conjunction with “approximately” a percentage of VDD, are understood to be respective voltages which maintain the low threshold voltage below the standard voltage threshold as a constraint within the 25% to 150% range value.
(7) In the present description, logic signals are asserted (or active) as 1, and not asserted (or not active) as 0. The voltage levels for power (or VDD) and inputs are with respect to ground (GND or 0V), and logic levels for 1 may vary according to process, and example values are given for illustration only. For example, “Standard Threshold Logic”, may use transistors and fabrication processes where VDD may be 0.75 VDC and a “1” logic input threshold above approximately 50% of VDD and 0 logic level below that voltage. “Low Threshold Voltage Logic” will use transistors with smaller dimension which operate using the same VDD but with lower logic input threshold voltages, such as approximately 33% of VDD, compared to the approximately 50% required by the standard logic. The LTVML will have a lower input switching threshold for I/O than the STVSL for a given process, temperature, or VDD condition, where VDD is typically 0.75 VDC or other value.
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(10) Table 1 below shows GIO currents through a series connection of a P channel and N channel transistor under various fabrication conditions, known as process characterization corners. The first letter indicates the P channel device and the second letter indicates the N channel device, such that TT indicates a typical P channel and N channel device in series. The other two letter sequences indicate characteristics by process, voltage, and temperature (PVT), where TT (typical-typical) indicates typical performance at the given voltages and temperatures, as was described previously, and the process corners FS (fast-slow), FF (fast-fast), and SS (slow-slow) showing a comparison of GIO current for LTVT and STVT FET leakage current variation in the N channel FET (NFET) device and P channel FET (PFET) device combinations, respectively. The table shows that using the STVT FET transistor process geometries in the slave latch results in reduced power consumption.
(11) TABLE-US-00001 TABLE 1 percent PVT (Process/ GIO using GIO using reduction Voltage/Temperature) LTVT ( μA) STVT ( μA) in current TT/0.75 V/27° C. 0.694 μA 0.569 μA 18% TT/0.75 V/125° C. 16.38 μA 15.5 μA 5.4% FS/0.75 V/27° C. 2.56 μA 2.12 μA 17% FS/0.75 V/125° C. 43.42 μA 41.84 μA 3.6% FF/0.75 V/27° C. 3.613 μA 3 μA 17% FF/0.75 V/125° C. 57.3 μA 55.77 μA 2.7% SS/0.75 V/27° C. 0.195 μA 0.178 μA 9% SS/0.75 V/125° C. 4.8 μA 4.64 μA 3.3% SF/0.75 V/27° C. 0.288 μA 0.259 μA 10% SF/0.75 V/125° C. 7.29 μA 7.2 μA 1.2%
(12) In
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(15) In operation,
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(17) In a test mode shown as interval 418, M_T_CLK 404 may be generated as before, where an M_F_CLK 402 is an inverted M_T_CLK 403, both of which are active during the test mode, indicated with Scan_test_Mode 406 asserted and Scan_In 410 active, generating Scan Out 414, which propagates the test pattern through each storage element 201-1, 201-2, . . . 201-m to output 210. Typically, in a test mode, a synchronization test pattern is applied to input 212 of
(18) The present examples are provided for illustrative purposes only, and are not intended to limit the invention to only the embodiments shown.