Nitride underlayer and fabrication method thereof

Abstract

A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

Claims

1. A fabrication method of a nitride underlayer, the method comprising: 1) providing a substrate; 2) sputtering an AlN layer over a surface of the substrate; during the sputtering, doping non-Al material with a decomposition temperature lower than that of AlN when Al source is input to form nitride, wherein the non-Al material comprises Ga; 3) annealing the AlN layer at an annealing temperature of 1080 C.-1200 C. to facilitate desorption of the Ga to thereby form a rough surface; and 4) depositing an Al.sub.xGa.sub.1-xN layer (0x1) over the AlN layer via MOCVD.

2. The fabrication method of claim 1, wherein the fabricated nitride underlayer comprises, from bottom up: the substrate; the AlN layer over a surface of the substrate with the rough surface; and the Al.sub.xGa.sub.1-xN layer (0x1).

3. The fabrication method of claim 1, wherein in step 4), the Al.sub.xGa.sub.1-xN layer grown via MOCVD releases stress via 3D-2D mode conversion over the rough surface.

4. The fabrication method of claim 1, wherein the doped non-Al material is not more than 10% of Al source.

5. A fabrication method of a light-emitting diode, the method comprising: 1) providing a substrate; 2) sputtering an AlN layer over a surface of the substrate; during sputtering, doping non-Al material with decomposition temperature lower than that of AlN when Al source is input to form nitride, wherein the non-Al material comprises Ga; 3) annealing the AlN layer at an annealing temperature of 1080 C.-1200 C. to facilitate desorption of the Ga to thereby form a rough surface; 4) depositing an Al.sub.xGa.sub.1-xN layer (0x1) over the AlN layer via MOCVD; and 5) depositing an n-type nitride layer, an active layer and a p-type nitride layer over the Al.sub.xGa.sub.1-xN layer.

6. The fabrication method of claim 5, wherein, in step 4), the Al.sub.xGa.sub.1-xN layer grown via MOCVD releases stress via 3D-2D mode conversion over the rough surface.

7. The fabrication method of claim 5, wherein, a light-emitting wavelength of the active layer is 365 nm-210 nm.

8. The fabrication method of claim 5, wherein, the doped non-Al material is not more than 10% of Al source.

9. A light-emitting diode fabricated with a fabrication method comprising: 1) providing a substrate; 2) sputtering an AlN layer over a surface of the substrate; during the sputtering, doping non-Al material with decomposition temperature lower than that of AlN when Al source is input to form nitride, wherein the non-Al material comprises Ga; 3) annealing the AlN layer at an annealing temperature of 1080 C.-1200 C. to facilitate desorption of the Ga to thereby form a rough surface; 4) depositing an Al.sub.xGa.sub.1-xN layer (0x1) over the AlN layer via MOCVD; and 5) depositing an n-type nitride layer, an active layer and a p-type nitride layer over the Al.sub.xGa.sub.1-xN layer; The light-emitting diode comprising, from bottom to up: the substrate; the AlN layer over a surface of the substrate with a rough surface; the Al.sub.xGa.sub.1-xN layer (0x1); the n-type nitride layer; the active layer; and the p-type nitride layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings, which are included to provide a further understanding of the disclosure and constitute a part of this specification, together with the embodiments, are therefore to be considered in all respects as illustrative and not restrictive. In addition, the drawings are merely illustrative, which are not drawn to scale.

(2) FIG. 1 shows a flowchart of fabricating a nitride underlayer according to some embodiments of the present disclosure.

(3) FIG. 2 illustrates a sectional view of a nitride underlayer structure according to some embodiments of the present disclosure.

(4) FIG. 3 illustrates a sectional view of a nitride light-emitting diode according to some embodiments the present disclosure.

DETAILED DESCRIPTION

(5) Various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, to help understand and practice the disclosed embodiments, regarding how to solve technical problems using technical approaches for achieving the technical effects. It should be understood that the embodiments and their characteristics described in this disclosure may be combined with each other and such technical proposals are deemed to be within the scope of this disclosure without departing from the spirit of this disclosure.

Embodiment 1

(6) FIG. 1 shows a flowchart of a fabrication method of a nitride underlayer according to the embodiments of the present disclosure, which includes steps S11: providing a substrate; S12: sputtering an AlN layer over a surface of the substrate; during sputtering, doping non-Al material with decomposition temperature lower than that of AlN when Al source is input to form nitride; S13: annealing the AlN layer to form a rough surface; and S14: depositing an AlxGa1-xN layer (0x1) over the AlN layer via MOCVD.

(7) Details are as described below with reference also to FIGS. 2 and 3.

(8) First, provide a substrate 110, which can be sapphire, AlN, GaN, Si, SiC or other materials. A surface of the substrate can be a plane structure or a patterned structure. In this embodiment, a sapphire plain substrate is adopted.

(9) Next, place the substrate 110 in the PVD chamber, and adjust the chamber temperature to 300-600 C. and pressure to 2-10 mtoor; deposit an AlN film layer 120 with a thickness of 10-350 nm via PVD; during depositing, dope a small amount of Ga metals, with amount less than 10% of the Al metal for inclusion formation of a small amount of GaN in the AlN film layer.

(10) After deposition, anneal the substrate deposited with the AlN film layer 120 under high temperature with annealing temperature of 1,100-2,000 C. As the Ga component would get seriously desorbed when temperature is higher than 1,077 C., the annealed AlN film layer 120 has a rough surface with microscopic ups and downs instead of a flat surface. In this embodiment, preferred annealing temperature is 1,080-1,200 C.

(11) Finally, put the substrate deposited with AlN film layer 120 to the CVD chamber, and adjust the chamber temperature to 400 C.-600 C. Then, input metal source, NH.sub.3 and H.sub.2 for epitaxial growth of the Al.sub.xGa.sub.1-xN layer 130 (0x1). This layer is 1-100 nm thick and covers the AlN film layer 120. FIG. 2 illustrates a sectional view of the nitride underlayer after growing the Al.sub.xGa.sub.1-xN layer 130. During this process, as the Al atom surface has poor migration capacity, Al atoms would preferably form island aggregation with ups and downs during Al.sub.xGa.sub.1-xN growth via MOCVD. Then, the small island grows to big island. When the island area gets larger, two adjacent islands or several islands would encounter and get mutually merged. The merging process includes island enlarging, mutual extrusion, and gradual thickening, etc. The pressure stress from extrusion would set off some tensile stress due to mismatch between the film and the substrate, thus decreasing tensile stress and improving cracks of the AlN layer.

(12) In the abovementioned method, the PVD-deposited AlN film can improve AlN crystalline quality during MOCVD growth. In addition, macro roughening is introduced to improve film stress for solving crack problem.

(13) FIG. 3 illustrates a sectional view of a LED structure over the nitride underlayer structure 100, which at least includes an n-type semiconductor layer 200, an active layer 300 and a p-type semiconductor layer 400. In general, the AlN material can allow light emission as low as about 200 nm, especially suitable for growth of deep-ultraviolet LEDs. In this embodiment, the Al.sub.xIn.sub.1-x-yGa.sub.yN layer 130 of the nitride underlayer structure 100 is AlN material. An n-type semiconductor layer 200, an active layer 300 and a p-type semiconductor layer 400 are formed over the AlN underlayer 100 with AlGaN material, which can realize high-quality ultraviolet LED with wavelength of 210-365 nm.

Embodiment 2

(14) Different from Embodiment 1, when the AlN film layer 120 is sputtered via PVD, a small amount of In metal is sputtered for inclusion formation of a small amount of InN material in the AlN film layer; in this way, the AlN film layer 120 sputtered via PVD is annealed to a rough surface under high temperature. As InN material can be decomposed at about 800 C., annealing temperature in this embodiment is controlled at 800-1,000 C.

(15) Although specific embodiments have been described above in detail, the description is merely for purposes of illustration. It should be appreciated, therefore, that many aspects described above are not intended as required or essential elements unless explicitly stated otherwise. Various modifications of, and equivalent acts corresponding to, the disclosed aspects of the exemplary embodiments, in addition to those described above, can be made by a person of ordinary skill in the art, having the benefit of the present disclosure, without departing from the spirit and scope of the disclosure defined in the following claims, the scope of which is to be accorded the broadest interpretation so as to encompass such modifications and equivalent structures.